CN104752567A - Cooling junction pushing and diffusion process - Google Patents
Cooling junction pushing and diffusion process Download PDFInfo
- Publication number
- CN104752567A CN104752567A CN201510202491.2A CN201510202491A CN104752567A CN 104752567 A CN104752567 A CN 104752567A CN 201510202491 A CN201510202491 A CN 201510202491A CN 104752567 A CN104752567 A CN 104752567A
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- China
- Prior art keywords
- nitrogen
- cooling
- diffusion
- flow
- oxygen
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000009792 diffusion process Methods 0.000 title claims abstract description 28
- 238000001816 cooling Methods 0.000 title claims abstract description 22
- 238000000034 method Methods 0.000 claims abstract description 17
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 54
- 229910052757 nitrogen Inorganic materials 0.000 claims description 27
- 238000005516 engineering process Methods 0.000 claims description 17
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 15
- 229910052760 oxygen Inorganic materials 0.000 claims description 15
- 239000001301 oxygen Substances 0.000 claims description 15
- 229910052698 phosphorus Inorganic materials 0.000 claims description 7
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 6
- 239000011574 phosphorus Substances 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 abstract description 9
- 238000005215 recombination Methods 0.000 abstract description 5
- 230000006798 recombination Effects 0.000 abstract description 5
- 239000012535 impurity Substances 0.000 abstract description 4
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 125000004437 phosphorous atom Chemical group 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a cooling junction pushing and diffusion process. The process comprises the following specific steps: (1) performing low-temperature diffusion; (2) performing high-temperature diffusion; (3) performing junction pushing in a cooling process. A minority of carrier recombination is reduced through the second-step diffusion process with a higher temperature, the surface impurity concentration is increased, the formation of Ohmic contact is facilitated, and junction pushing is performed at a low temperature to ensure the product uniformity and lower the surface concentration, so that the aims of saving the cooling time, optimizing the production process and ensuring the product quality are fulfilled.
Description
Technical field
The present invention relates to solar energy production and utilize field, be specifically related to a kind of cooling knot diffusion technology.
Background technology
At present, the main manufacturing processes standardization of single, polycrystalline silicon solar cell, its key step is as follows: chemical cleaning and surface-texturing process, and---------depositing antireflection film---prints electrode---sintering periphery etching to diffuse to form PN junction.In the main manufacturing processes of solar cell, the concentration spread, the degree of depth and uniformity directly affect the electrical property of solar cell, its effect totally to have the P-type silicon sheet Doping Phosphorus atom of matte, form PN junction, PN junction is the core of solar cell power generation, has vital impact to the production of whole cell piece and its final conversion efficiency.Mainly there are the following problems 1 for existing technique, along with diffusion square resistance improves constantly, the requirement of diffusion uniformity is more and more higher, and existing technique uniformity when high square resistance is poor; 2, surperficial dead layer problem, surface recombination is comparatively large, current/voltage loss.
Summary of the invention
For solving the problems of the technologies described above, the present invention proposes cooling knot diffusion technology, to reach the object of optimized production process and guarantee product quality.
For achieving the above object, technical scheme of the present invention is as follows:
A kind of cooling knot diffusion technology, its concrete steps are as follows:
(1). carry out low temperature diffusion: utilize the nitrogen of low discharge to carry phosphorus source and enter boiler tube and spread, and in whole process, keep the nitrogen of dry oxygen and large discharge to pass into, wherein used low discharge nitrogen flow is: 400-2000sccm, large discharge nitrogen flow is: 4-15slm, and oxygen is 400-3000sccm by flow;
(2). carry out High temperature diffusion: utilize the nitrogen of low discharge to carry phosphorus source and enter boiler tube and spread, and in whole process, keep the nitrogen of dry oxygen and large discharge to pass into, wherein used low discharge nitrogen flow is: 600-3000sccm, large discharge nitrogen flow is: 4-15slm, and oxygen is 800-3000sccm by flow;
(3). in the process of cooling, carry out knot, and pass into oxygen with flow 800-3000sccm, and keep the nitrogen of 4-15slm to pass into.
As preferably, the time used in described step (1) is 5-20 minute, and the technological temperature of shown employing is: 795-840 DEG C.
As preferably, the time used in described step (2) is 5-20 minute, and the technological temperature adopted is: 850-890 DEG C.
As preferably, the time used in described step (3) is: 5-20 minute, and the technological temperature adopted is 790-835 DEG C.
Pass through technique scheme, the present invention reduces minority carrier recombination by the diffusion technology of second step higher temperature, surface impurity concentration is improved, be conducive to forming ohmic contact, and then carry out knot at a lower temperature, realize ensureing product uniformity and reducing surface concentration, thus reach the object of saving cooling required time, optimized production process and guarantee product quality.
Embodiment
Below the technical scheme in the embodiment of the present invention is clearly and completely described.
The invention provides cooling knot diffusion technology, its operation principle reduces minority carrier recombination by the diffusion technology of second step higher temperature, surface impurity concentration is improved, be conducive to forming ohmic contact, and then carry out knot at a lower temperature, realize ensureing product uniformity and reducing surface concentration, thus reach saving cooling required time, the object of optimized production process and guarantee product quality.
Below in conjunction with embodiment and embodiment, the present invention is further detailed explanation.
A kind of cooling knot diffusion technology, its concrete steps are as follows:
(1). carry out low temperature diffusion: utilize the nitrogen of low discharge to carry phosphorus source and enter boiler tube and spread, and in whole process, keep the nitrogen of dry oxygen and large discharge to pass into, wherein used low discharge nitrogen flow is: 400-2000sccm, large discharge nitrogen flow is: 4-15slm, and oxygen is 400-3000sccm by flow;
(2). carry out High temperature diffusion: utilize the nitrogen of low discharge to carry phosphorus source and enter boiler tube and spread, and in whole process, keep the nitrogen of dry oxygen and large discharge to pass into, wherein used low discharge nitrogen flow is: 600-3000sccm, large discharge nitrogen flow is: 4-15slm, and oxygen is 800-3000sccm by flow;
(3). in the process of cooling, carry out knot, and pass into oxygen with flow 800-3000sccm, and keep the nitrogen of 4-15slm to pass into.
As preferably, the time used in described step (1) is 5-20 minute, and the technological temperature of shown employing is: 795-840 DEG C.
It should be noted that the time used in described step (2) is 5-20 minute, the technological temperature adopted is: 850-890 DEG C.
It should be noted that the time used in described step (3) is: 5-20 minute, the technological temperature adopted is 790-835 DEG C.
Adopt identical silicon chip raw material: P type polysilicon chip, resistivity 0.5 ~ 3 Ω cm, each 3600 are carried out conventional cleaning and texturing respectively, and subsequent technique all adopts common process to produce, and contrasts final unit for electrical property parameters
Can be gone out by data, invention increases open circuit voltage, short circuit current, and then improve cell piece efficiency.
By above mode, cooling knot diffusion technology provided by the present invention, minority carrier recombination is reduced by the diffusion technology of second step higher temperature, surface impurity concentration is improved, be conducive to forming ohmic contact, and then carry out knot at a lower temperature, realize ensureing that product uniformity saves cooling required time, the object of optimized production process and guarantee product quality with reducing surface concentration thus reaching.
Above-described is only the preferred implementation of cooling knot diffusion technology disclosed in this invention; should be understood that; for the person of ordinary skill of the art; without departing from the concept of the premise of the invention; can also make some distortion and improvement, these all belong to protection scope of the present invention.
Claims (4)
1. a cooling knot diffusion technology, it is characterized in that, its concrete steps are as follows:
(1). carry out low temperature diffusion: utilize the nitrogen of low discharge to carry phosphorus source and enter boiler tube and spread, and in whole process, keep the nitrogen of dry oxygen and large discharge to pass into, wherein used low discharge nitrogen flow is: 400-2000sccm, large discharge nitrogen flow is: 4-15slm, and oxygen is 400-3000sccm by flow;
(2). carry out High temperature diffusion: utilize the nitrogen of low discharge to carry phosphorus source and enter boiler tube and spread, and in whole process, keep the nitrogen of dry oxygen and large discharge to pass into, wherein used low discharge nitrogen flow is: 600-3000sccm, large discharge nitrogen flow is: 4-15slm, and oxygen is 800-3000sccm by flow;
(3). in the process of cooling, carry out knot, and pass into oxygen with flow 800-3000sccm, and keep the nitrogen of 4-15slm to pass into.
2. cooling knot diffusion technology according to claim 1, is characterized in that, the time used in described step (1) is 5-20 minute, and the technological temperature of shown employing is: 795-840 DEG C.
3. cooling knot diffusion technology according to claim 1, is characterized in that, the time used in described step (2) is 5-20 minute, and the technological temperature adopted is: 850-890 DEG C.
4. cooling knot diffusion technology according to claim 1, is characterized in that, the time used in described step (3) is: 5-20 minute, and the technological temperature adopted is 790-835 DEG C.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510202491.2A CN104752567A (en) | 2015-04-24 | 2015-04-24 | Cooling junction pushing and diffusion process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510202491.2A CN104752567A (en) | 2015-04-24 | 2015-04-24 | Cooling junction pushing and diffusion process |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104752567A true CN104752567A (en) | 2015-07-01 |
Family
ID=53591954
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510202491.2A Pending CN104752567A (en) | 2015-04-24 | 2015-04-24 | Cooling junction pushing and diffusion process |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104752567A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102509748A (en) * | 2011-11-30 | 2012-06-20 | 合肥晶澳太阳能科技有限公司 | Diffusion technology for reducing dark current of metallurgical silicon solar battery |
| CN102691107A (en) * | 2012-06-11 | 2012-09-26 | 上海超日(洛阳)太阳能有限公司 | Diffusion process for solar battery preparation |
| US20120282732A1 (en) * | 2010-01-18 | 2012-11-08 | Hyundai Heavy Industries Co., Ltd. | Method for fabricating a back contact solar cell |
-
2015
- 2015-04-24 CN CN201510202491.2A patent/CN104752567A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120282732A1 (en) * | 2010-01-18 | 2012-11-08 | Hyundai Heavy Industries Co., Ltd. | Method for fabricating a back contact solar cell |
| CN102509748A (en) * | 2011-11-30 | 2012-06-20 | 合肥晶澳太阳能科技有限公司 | Diffusion technology for reducing dark current of metallurgical silicon solar battery |
| CN102691107A (en) * | 2012-06-11 | 2012-09-26 | 上海超日(洛阳)太阳能有限公司 | Diffusion process for solar battery preparation |
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| WD01 | Invention patent application deemed withdrawn after publication | ||
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Application publication date: 20150701 |