CN103311376A - Manufacturing method for N type solar cell - Google Patents
Manufacturing method for N type solar cell Download PDFInfo
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- CN103311376A CN103311376A CN2013102601732A CN201310260173A CN103311376A CN 103311376 A CN103311376 A CN 103311376A CN 2013102601732 A CN2013102601732 A CN 2013102601732A CN 201310260173 A CN201310260173 A CN 201310260173A CN 103311376 A CN103311376 A CN 103311376A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract
The invention discloses a manufacturing method for an N type solar cell. The manufacturing method comprises the steps of providing an N type semiconductor substrate; forming an emitting electrode on the front surface of the N type semiconductor substrate, and adopting an ion implantation technology to form an N type heavy doping back surface field on the back surface of the N type semiconductor substrate. The N type heavy doping back surface field is formed on the back surface of the N type semiconductor substrate, the junction depth and concentration of the N type heavy doping back surface field can be controlled well while single side diffusion can be achieved to form the N type heavy doping back surface field, the back surface field with higher quality is manufactured, and efficiency of the N type solar cell is improved. In addition, damage of the N type semiconductor substrate caused by high temperature thermal diffusion can also be avoided, and quality of the solar cell is improved.
Description
Technical field
The invention belongs to solar cell and make the field, relate in particular to a kind of manufacture method of N-type solar cell.
Background technology
Solar cell is a kind of semiconductor device with power conversion function based on semi-conducting material, is the most crucial device of solar energy power generating.Manufacture craft with crystal silicon solar energy battery is the most ripe again in now area of solar cell, crystal silicon solar energy battery is divided into N-type crystal silicon solar energy battery and P type crystal silicon solar energy battery, also be, common crystal silicon solar energy battery all comprises N-type and P type as monocrystaline silicon solar cell, polysilicon solar cell and non-crystal silicon solar cell etc.The manufacture method of N-type crystal silicon solar energy battery comprises: surface wool manufacturing, a back of the body preparation, diffusion system knot, etching insulation, coated with antireflection film and printing sintering, wherein, carry on the back a preparation technology and can form one deck N-type heavy doping back of the body field on the back of the body surface of N-type crystal silicon solar energy battery, to set up a concentration gradient in N-type crystal silicon solar energy battery inside, make the charge carrier of the PN junction collection that is positioned at the solar cell front surface be diffused into rear surface of solar cell, form electric current.
The back of the body field of conventional N-type solar cell forms by the high-temperature diffusion process preparation, concrete, solar battery sheet is placed quartz ampoule inside, under hot conditions, feed gaseous source then, to form N-type heavy doping back of the body field by thermal diffusion on the back of the body surface of solar cell.But the method that is diffused in the back of the body surface formation back of the body field of N-type solar cell by elevated temperature heat can't realize the single face diffusion, and the quality of the back of the body field of formation is also relatively poor, and the process of back of the body field preparation also can influence the quality of solar cell.
Summary of the invention
In view of this, the invention provides a kind of method for manufacturing solar battery, the manufacture method of this kind solar cell can guarantee that the N-type solar cell has good back of the body field, but also can improve the quality of N-type solar cell.
For achieving the above object, the embodiment of the invention provides following technical scheme:
A kind of manufacture method of N-type solar cell comprises: the N type semiconductor substrate is provided;
Form emitter at described N type semiconductor substrate front surface, and the employing ion implantation technology forms N-type heavy doping back of the body field on described N type semiconductor substrate back of the body surface.
Preferably, described N type semiconductor substrate is n type single crystal silicon substrate, N-type polysilicon substrate or N-type amorphous silicon substrate.
Preferably, form emitter at described N type semiconductor substrate front surface, and the employing ion implantation technology comprises specifically in the method that described N type semiconductor substrate back of the body surface forms N-type heavy doping back of the body field: carry out ion on described N type semiconductor substrate back of the body surface and inject; Carry out emitter diffusion at described N type semiconductor substrate front surface; Carry out oxidizing annealing, in described N type semiconductor substrate front surface formation emitter, form N-type heavy doping back of the body field on described N type semiconductor substrate back of the body surface.
Preferably, form emitter at described N type semiconductor substrate front surface, and the employing ion implantation technology specifically comprises in the method that described N type semiconductor substrate back of the body surface forms N-type heavy doping back of the body field: carry out emitter diffusion at described N type semiconductor substrate front surface, and clean the N type semiconductor substrate after the described diffusion; Carrying out ion on described N type semiconductor substrate back of the body surface injects; Carry out oxidizing annealing, in described N type semiconductor substrate front surface formation emitter, form N-type heavy doping back of the body field on described N type semiconductor substrate back of the body surface.
Preferably, form emitter at described N type semiconductor substrate front surface, and the employing ion implantation technology specifically comprises in the method that described N type semiconductor substrate back of the body surface forms N-type heavy doping back of the body field: carry out emitter diffusion and oxidizing annealing at described N type semiconductor substrate front surface, form emitter at described N type semiconductor substrate front surface; Carry out ion injection and oxidizing annealing on described N type semiconductor substrate back of the body surface, form N-type heavy doping back of the body field on described N type semiconductor substrate back of the body surface.
Preferably, form emitter at described N type semiconductor substrate front surface, and the employing ion implantation technology specifically comprises in the surperficial method that forms N-type heavy doping back of the body field of the described N type semiconductor substrate back of the body: carry out ion injection and oxidizing annealing on described N type semiconductor substrate back of the body surface, in described N type semiconductor substrate back of the body surface formation N-type heavy doping back of the body field; Carry out emitter diffusion and oxidizing annealing at described N type semiconductor substrate front surface, form emitter at described N type semiconductor substrate front surface.
Preferably, carrying out the ion injection on described N type semiconductor substrate back of the body surface is to adopt the compound molecule that comprises phosphorus atoms.
Preferably, the described compound molecule that comprises phosphorus atoms is hydrogen phosphide molecule or other phosphorous compound molecules.
Compared with prior art, the embodiment of the invention has the following advantages:
The present invention adopts ion implantation technology to form N-type heavy doping back of the body field on described N type semiconductor substrate back of the body surface, this kind manufacture method is when forming the N-type solar cell back surface field, can realize the single face diffusion, simultaneously, in view of the process characteristic of ion implantation technology, adopt this moment ion implantation technology to mix on N type semiconductor substrate back of the body surface, can better control junction depth and the concentration of N-type heavy doping back of the body field, prepare higher-quality back of the body field, improve the efficient of N-type solar cell.In addition, owing to the technological temperature of ion implantation technology for the N Semiconductor substrate do not require, so can under room temperature or cryogenic conditions, mix as required, to avoid the infringement of elevated temperature heat diffusion couple N type semiconductor substrate, improved the quality of solar cell.
Description of drawings
In order to be illustrated more clearly in the embodiment of the invention or technical scheme of the prior art, to do to introduce simply to the accompanying drawing of required use in embodiment or the description of the Prior Art below, apparently, accompanying drawing in describing below only is some embodiments of the present invention, for those of ordinary skills, under the prerequisite of not paying creative work, can also obtain other accompanying drawing according to these accompanying drawings.
Fig. 1 is the flow chart of a kind of N-type method for manufacturing solar battery provided by the invention;
Fig. 2 forms emitter for the present invention at described N type semiconductor substrate front surface, and the employing ion implantation technology forms the flow chart of the method 1 of N-type heavy doping back of the body field on described N type semiconductor substrate back of the body surface;
Fig. 3 forms emitter for the present invention at described N type semiconductor substrate front surface, and the employing ion implantation technology forms the flow chart of the method 2 of N-type heavy doping back of the body field on described N type semiconductor substrate back of the body surface.
Embodiment
As saying in the background technology, the back of the body field of existing N-type solar cell is second-rate, and the process of a back of the body preparation also can influence the quality of solar cell.
The inventor discovers, in the manufacturing process of existing N-type solar cell, when N type semiconductor substrate back of the body surface makes, normally adopt the mode of High temperature diffusion to carry out the phosphorus diffusion at the back side of N type semiconductor substrate, and then oxidation degenerates to form N-type heavy doping back of the body field, after mode by High temperature diffusion forms the N-type heavy doping back of the body, in the high concentration shallow junction zone that N-type solar battery back surface forms, because electric inactive phosphorus atoms is in the interstitial void position and can causes lattice defect, and because the radius of the silicon atom of the phosphorus atoms that ion injects and N type semiconductor substrate interior does not match, the phosphorus atoms of high concentration can cause the lattice mismatch of N type semiconductor substrate; Therefore in the top layer of N-type solar cell (be 0.2 μ m greater than the degree of depth), minority carrier lifetime is lower, the photo-generated carrier that the shortwave photon that makes N-type solar cell front surface absorb produces is very little to the photoelectric current output of solar cell, form " dead layer " in the N-type solar cell surface, increase the complex centre of N-type solar cell, thereby influenced the quality of N-type solar cell.
For these reasons, the invention discloses a kind of manufacture method of N-type solar cell, comprising: the N type semiconductor substrate is provided; Form emitter at described N type semiconductor substrate front surface, and the employing ion implantation technology forms N-type heavy doping back of the body field on described N type semiconductor substrate back of the body surface.
The present invention adopts ion implantation technology to form N-type heavy doping back of the body field on described N type semiconductor substrate back of the body surface, this kind manufacture method is when realizing that single face diffuses to form the N-type solar cell back surface field, can better control junction depth and the concentration of N-type heavy doping back of the body field, prepare higher-quality back of the body field, improve the conversion efficiency of N-type solar cell.In addition, can also avoid the infringement of elevated temperature heat diffusion couple N type semiconductor substrate, improve the quality of solar cell.
For above-mentioned purpose of the present invention, feature and advantage can be become apparent more, below in conjunction with accompanying drawing the specific embodiment of the present invention is described in detail.
A lot of details have been set forth in the following description so that fully understand the present invention, but the present invention can also adopt other to be different from alternate manner described here and implement, those skilled in the art can do similar popularization under the situation of intension of the present invention, so the present invention is not subjected to the restriction of following public specific embodiment.
Secondly, the present invention is described in detail in conjunction with schematic diagram, when the embodiment of the invention is described in detail in detail; for ease of explanation; the plane graph of expression device shape can be disobeyed general ratio and be done local the amplification, and described schematic diagram is example, and it should not limit the scope of protection of the invention at this.The three dimensions size that in actual fabrication, should comprise in addition, length, width and the degree of depth.
Specifically describe below in conjunction with the manufacture method of accompanying drawing to N-type solar cell provided by the invention.
The invention provides a kind of manufacture method of N-type solar cell, as shown in Figure 1, may further comprise the steps:
Step 101: the N type semiconductor substrate is provided.
The kind of described N type semiconductor substrate comprises n type single crystal silicon substrate, N-type polysilicon substrate and N-type amorphous silicon substrate etc.
Step 102: form emitter at described N type semiconductor substrate front surface, and the employing ion implantation technology forms N-type heavy doping back of the body field on described N type semiconductor substrate back of the body surface.
A specific embodiment of the present invention, it is to adopt the compound molecule that comprises phosphorus atoms that the employing ion implantation technology forms N-type heavy doping back of the body field on described N type semiconductor substrate back of the body surface.For convenience of explanation, the present invention's compound molecule of comprising phosphorus atoms with employing carries out ion and is injected to example and describes.Concrete steps comprise: at first, the compound molecule ionization that will comprise phosphorus atoms is foreign ion; Use accelerating field (5KeV-500KeV) to accelerate the foreign ion of described gathering bunchy then, make it become high energy ion beam; With the direct bombarding semiconductor substrate back of the body of the high energy ion beam that forms surface, make ion enter the inside of Semiconductor substrate afterwards.Stopped by the atom of Semiconductor substrate, when ion entered Semiconductor substrate, ion can rest on Semiconductor substrate inside; At last, on high energy ion beam bombarding semiconductor substrate back of the body surface, when phosphorus atoms is injected the process of Semiconductor substrate, can be at inner some lattice defects that produce of Semiconductor substrate, therefore after injecting, ion also needs to anneal or these defectives are eliminated in laser annealing with low temperature, also namely behind oxidizing annealing, the impurity in the Semiconductor substrate enters displacement, ionization to be become and has electroactive impurity.
Need to prove, the described compound molecule that comprises phosphorus atoms is hydrogen phosphide molecule or other phosphorous compound molecules etc., the described compound molecule that comprises phosphorus atoms can be selected according to concrete actual needs, and the present invention does not limit for the described kind that comprises the compound molecule of phosphorus atoms.
The employing ion implantation technology forms in the process of N-type heavy doping back of the body field on N Semiconductor substrate back of the body surface, because the number of ions that injects is decided by the line of the high energy ion beam that accumulates, the depth distribution of the ion that injects is then controlled by accelerating voltage, these two parameters of the line of high energy ion beam and accelerating voltage can accurately be measured by ambient systems, strict control, so it is accurately controlled to inject concentration and the depth distribution of ion, can well control simultaneously the balance between junction depth and the concentration, guarantee the quality of N-type solar cell back surface field, improve the efficient of N-type solar cell.In addition, because ion is infused in when injecting ion, the Semiconductor substrate temperature can freely be selected, both can under room temperature or cryogenic conditions, mix as required, carry on the back the field and form heavy doping on Semiconductor substrate back of the body surface, overcome the fire damage of elevated temperature heat diffusion couple Semiconductor substrate, further guarantee the quality of N-type solar cell back surface field, improve the conversion efficiency of solar cell.
Form emitter at described N type semiconductor substrate front surface, and the employing ion implantation technology comprises at the concrete grammar that described N type semiconductor substrate back of the body surface forms N-type heavy doping back of the body field following several:
Method 1 as shown in Figure 2, comprising:
Step 201: carry out ion on described N type semiconductor substrate back of the body surface and inject.
Step 202: carry out emitter diffusion at described N type semiconductor substrate front surface.
Step 203: carry out oxidizing annealing, in described N type semiconductor substrate front surface formation emitter, form N-type heavy doping back of the body field on described N type semiconductor substrate back of the body surface.
This kind method is carried out ion again and is injected formation N-type heavy doping back of the body field after described N type semiconductor substrate front surface carries out emitter diffusion on described N type semiconductor substrate back of the body surface, can simplify the production craft step of solar cell when promoting efficient.
Method 2 as shown in Figure 3, comprising:
Step 301: carry out emitter diffusion at described N type semiconductor substrate front surface, and clean the N type semiconductor substrate after the described diffusion.
Step 302: carry out ion on described N type semiconductor substrate back of the body surface and inject.
Step 303: carry out oxidizing annealing, in described N type semiconductor substrate front surface formation emitter, form N-type heavy doping back of the body field on described N type semiconductor substrate back of the body surface.
Behind the carrying out emitter diffusion and described N type semiconductor substrate carried out chemical cleaning of described N type semiconductor substrate front surface, carry out ion again on described N type semiconductor substrate back of the body surface and inject formation N-type heavy doping back of the body field, can in the manufacture craft and step and old process basically identical that guarantee solar cell, improve the efficient of solar cell largely.
Method 3 comprises:
Carry out emitter diffusion and oxidizing annealing at described N type semiconductor substrate front surface, form emitter at described N type semiconductor substrate front surface; Carry out ion injection and oxidizing annealing on described N type semiconductor substrate back of the body surface, form N-type heavy doping back of the body field on described N type semiconductor substrate back of the body surface.
Method 4 comprises:
Carry out ion injection and oxidizing annealing on described N type semiconductor substrate back of the body surface, form N-type heavy doping back of the body field on described N type semiconductor substrate back of the body surface; Carry out emitter diffusion and oxidizing annealing at described N type semiconductor substrate front surface, form emitter at described N type semiconductor substrate front surface.
In the manufacturing process of actual N-type battery, to adopt ion implantation technology to form N-type heavy doping back of the body field on N type semiconductor substrate back of the body surface combines with existing manufacture method, the manufacture method of the N-type solar cell that forms is not limited only to above-mentioned two kinds of methods, and the present invention enumerates no longer one by one to this.After described N type semiconductor substrate front surface carries out emitter diffusion and described N type semiconductor substrate is carried out chemical cleaning, carry out ion again on described N type semiconductor substrate back of the body surface and inject formation N-type heavy doping back of the body field, can in the manufacture craft and step and old process basically identical that guarantee solar cell, improve the efficient of solar cell largely.
The above embodiment only is preferred embodiment of the present invention, is not the present invention is done any pro forma restriction.
Though the present invention discloses as above with preferred embodiment, yet is not in order to limit the present invention.Any those of ordinary skill in the art, do not breaking away under the technical solution of the present invention scope situation, all can utilize method and the technology contents of above-mentioned announcement that technical solution of the present invention is made many possible changes and modification, or be revised as the equivalent embodiment of equivalent variations.Therefore, every content that does not break away from technical solution of the present invention according to any simple modification, equivalent variations and the modification that technical spirit of the present invention is done above embodiment, all still belongs in the scope of technical solution of the present invention protection.
Claims (8)
1. the manufacture method of a N-type solar cell is characterized in that, comprising:
The N type semiconductor substrate is provided;
Form emitter at described N type semiconductor substrate front surface, and the employing ion implantation technology forms N-type heavy doping back of the body field on described N type semiconductor substrate back of the body surface.
2. manufacture method according to claim 1 is characterized in that, described N type semiconductor substrate is n type single crystal silicon substrate, N-type polysilicon substrate or N-type amorphous silicon substrate.
3. manufacture method according to claim 1 is characterized in that, forms emitter at described N type semiconductor substrate front surface, and the employing ion implantation technology specifically comprises in the method that described N type semiconductor substrate back of the body surface forms N-type heavy doping back of the body field:
Carrying out ion on described N type semiconductor substrate back of the body surface injects;
Carry out emitter diffusion at described N type semiconductor substrate front surface;
Carry out oxidizing annealing, in described N type semiconductor substrate front surface formation emitter, form N-type heavy doping back of the body field on described N type semiconductor substrate back of the body surface.
4. manufacture method according to claim 1 is characterized in that, forms emitter at described N type semiconductor substrate front surface, and the employing ion implantation technology specifically comprises in the method that described N type semiconductor substrate back of the body surface forms N-type heavy doping back of the body field:
Carry out emitter diffusion at described N type semiconductor substrate front surface, and clean the N type semiconductor substrate after the described diffusion;
Carrying out ion on described N type semiconductor substrate back of the body surface injects;
Carry out oxidizing annealing, in described N type semiconductor substrate front surface formation emitter, form N-type heavy doping back of the body field on described N type semiconductor substrate back of the body surface.
5. manufacture method according to claim 1 is characterized in that, forms emitter at described N type semiconductor substrate front surface, and the employing ion implantation technology specifically comprises in the method that described N type semiconductor substrate back of the body surface forms N-type heavy doping back of the body field:
Carry out emitter diffusion and oxidizing annealing at described N type semiconductor substrate front surface, form emitter at described N type semiconductor substrate front surface;
Carry out ion injection and oxidizing annealing on described N type semiconductor substrate back of the body surface, form N-type heavy doping back of the body field on described N type semiconductor substrate back of the body surface.
6. manufacture method according to claim 1 is characterized in that, forms emitter at described N type semiconductor substrate front surface, and the employing ion implantation technology specifically comprises in the method that described N type semiconductor substrate back of the body surface forms N-type heavy doping back of the body field:
Carry out ion injection and oxidizing annealing on described N type semiconductor substrate back of the body surface, form N-type heavy doping back of the body field on described N type semiconductor substrate back of the body surface;
Carry out emitter diffusion and oxidizing annealing at described N type semiconductor substrate front surface, form emitter at described N type semiconductor substrate front surface.
7. according to each described manufacture method of claim 3-6, it is characterized in that carrying out the ion injection on described N type semiconductor substrate back of the body surface is to adopt the compound molecule that comprises phosphorus atoms.
8. manufacture method according to claim 7 is characterized in that, the described compound molecule that comprises phosphorus atoms is hydrogen phosphide molecule or other phosphorous compound molecules.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113314627A (en) * | 2021-05-28 | 2021-08-27 | 常州时创能源股份有限公司 | PERC solar cell and preparation method thereof |
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| CN102315312A (en) * | 2010-07-09 | 2012-01-11 | 国立清华大学 | Manufacturing process of silicon heterojunction solar battery |
| CN102544195A (en) * | 2010-12-30 | 2012-07-04 | 上海凯世通半导体有限公司 | Solar cell and manufacturing method thereof |
| EP2528105A2 (en) * | 2010-01-18 | 2012-11-28 | Hyundai Heavy Industries Co., Ltd. | Method for fabricating a back contact solar cell |
| CN103094420A (en) * | 2013-01-25 | 2013-05-08 | 中山大学 | Solar cell back processing method |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2528105A2 (en) * | 2010-01-18 | 2012-11-28 | Hyundai Heavy Industries Co., Ltd. | Method for fabricating a back contact solar cell |
| CN102315312A (en) * | 2010-07-09 | 2012-01-11 | 国立清华大学 | Manufacturing process of silicon heterojunction solar battery |
| CN102544195A (en) * | 2010-12-30 | 2012-07-04 | 上海凯世通半导体有限公司 | Solar cell and manufacturing method thereof |
| CN103094420A (en) * | 2013-01-25 | 2013-05-08 | 中山大学 | Solar cell back processing method |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113314627A (en) * | 2021-05-28 | 2021-08-27 | 常州时创能源股份有限公司 | PERC solar cell and preparation method thereof |
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Effective date of registration: 20160225 Address after: 071051, No. 3, unit 3, 15 Swan Road, 102 downtown, Xinshi District, Hebei, Baoding Applicant after: Xu Zhuo Address before: Baoding City, Hebei province 071051 woodland Street No. 722 Applicant before: Yingli Group Ltd. |
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