WO2016068711A4 - Back side contacted wafer-based solar cells with in-situ doped crystallized silicon oxide regions - Google Patents

Back side contacted wafer-based solar cells with in-situ doped crystallized silicon oxide regions Download PDF

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Publication number
WO2016068711A4
WO2016068711A4 PCT/NL2015/050759 NL2015050759W WO2016068711A4 WO 2016068711 A4 WO2016068711 A4 WO 2016068711A4 NL 2015050759 W NL2015050759 W NL 2015050759W WO 2016068711 A4 WO2016068711 A4 WO 2016068711A4
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Prior art keywords
doped
solar cell
silicon
regions
doped regions
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PCT/NL2015/050759
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French (fr)
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WO2016068711A3 (en
WO2016068711A2 (en
Inventor
Guangtao YANG
Andrea INGENITO
Olindo ISABELLA
Miroslav Zeman
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Technische Universiteit Delft
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Publication of WO2016068711A3 publication Critical patent/WO2016068711A3/en
Publication of WO2016068711A4 publication Critical patent/WO2016068711A4/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0368—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors
    • H01L31/03682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors including only elements of Group IV of the Periodic Table
    • H01L31/03685—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors including only elements of Group IV of the Periodic Table including microcrystalline silicon, uc-Si
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
    • H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • H01L31/182—Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si
    • H01L31/1824—Special manufacturing methods for microcrystalline Si, uc-Si
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/545—Microcrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Sustainable Energy (AREA)
  • Sustainable Development (AREA)
  • Photovoltaic Devices (AREA)

Abstract

The present invention is in the field of a process for making back side contacted wafer-based solar cells with in-situ doped crystallized thin-film silicon oxide regions and optionally in-situ doped silicon regions, and back side contacted solar cells. A solar cell, or photovoltaic (PV) cell, is an electrical device that converts energy of light, typically sun light (hence "solar"), directly into electricity by the so-called photovoltaic effect. The solar cell may be considered a photoelectric cell, having electrical characteristics, such as current, voltage, resistance, and fill factor, which vary when exposed to light and which vary from type of cell to type.

Claims

AMENDED CLAIMS received by the International Bureau on 23 June 2016 (23.06.2016)
1. Increased efficiency silicon based solar cell (100) with back side contacts (71), comprising
a silicon substrate (21) ,
at least one n-doped region (41) and at least one p- doped region (42), wherein materials of the doped regions are independently selected from micro-crystalline thin-film sili¬ con and micro-crystalline thin film silicon oxide, with the proviso that at least one micro-crystalline thin film silicon oxide region is present,
an un-doped silicon-oxide tunnelling layer (31a,b) be-- tween the n-doped or p-doped regions, respectively, and the silicon substrate,
and wherein each contact (71) is in electrical contact with a doped region (41,42) .
2. Solar cell according to claim 1, wherein the solar cell is double sided polished, one side polished and one side textured, or double sided textured.
3. Solar cell according to any of the preceding claims, wherein the doped regions (41,42) are PECVD and thermal an- nealed regions.
4. Solar cell according to any of the preceding claims, wherein the contacts (71) independently consist of in-situ doped semi-insulating material, such as micro-crystalline thin-film silicon and micro-crystalline thin film silicon ox- ide.
5. Solar cell according to any of the preceding claims, wherein at least one of the contacts (71) are passivated, an area of a p-doped region is two- to eight- times an area of an n-doped region, the n-doped region and p-doped region are separated by a distance of 0-1-5% relative to a length of the epitaxial-doped region, and p-doped regions and n-doped regions have a pitch of 0.1 mm-5 mm.
6. Solar cell according to any of the preceding claims, wherein the un-doped silicon-oxide tunnelling layer (31a,b) between the n-doped or p-doped regions is present only between doped regions and the silicon substrate.
7. Solar cell according to any of the preceding claims, further comprising at least one of an un-doped silicon oxide (31c) on a front side of the silicon substrate,
a doped layer (45) on said front side silicon oxide layer, and
a passivation layer (51a) on said doped front side lay- er .
8. Solar cell according to any of the preceding claims, wherein the oppositely doped regions (41, 42) are separated by trenches (81), wherein trenches are filled with a (semi) insulating material.
9. Solar cell according to any of the preceding claims, wherein the micro-crystalline thin-film silicon and micro- crystalline thin film silicon oxide each independently comprise hydrogen in a concentration of 0.2-20 atom% .
10. Process for manufacturing a solar cell according to any of claims 1-9, comprising the steps of
providing a silicon substrate (21),
providing at least one n-doped region (41) and at least one p-doped region. (42), wherein the doped regions are independently selected from thin-film silicon and thin film sili- con oxide,
annealing said doped regions (41,42) at a temperature of less than 900 °C during a sufficient period of time, wherein said period is typically less than 30 minutes,
providing an un-doped silicon-oxide tunnelling layer (31a,b) between the n-doped or p-doped regions, respectively, and the silicon substrate, and
providing contacts (71) each being in electrical contact with a doped region (41,42).
11. Process according to claims 10, wherein a first doped layer (41) is etched, thereby forming first doped regions, and thereafter
second doped regions (42) are formed, preferably wherein first and second doped regions are alternating.
12. Process according to any of claims 10-11, wherein after forming a second doped layer (42), both doped layers
(41,42) are covered with an insulating layer (51b), the insulating layer extending in between oppositely doped regions.
13. Process according to any of claims 10-12, wherein at least one doped region is deposited by low temperature PECVD.
14. Process according to any of the preceding claims, wherein contacts (71) are provided by metal deposition and lift off (of non-contact areas) , screen printing, and electrical plating.
PCT/NL2015/050759 2014-10-31 2015-10-30 Back side contacted wafer-based solar cells with in-situ doped crystallized silicon oxide regions WO2016068711A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL2013722A NL2013722B1 (en) 2014-10-31 2014-10-31 Back side contacted wafer-based solar cells with in-situ doped crystallized thin-film silicon and/or silicon oxide regions.
NL2013722 2014-10-31

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WO2016068711A2 WO2016068711A2 (en) 2016-05-06
WO2016068711A3 WO2016068711A3 (en) 2016-06-23
WO2016068711A4 true WO2016068711A4 (en) 2016-08-11

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CN106684160A (en) * 2016-12-30 2017-05-17 中国科学院微电子研究所 Back-junction back-contact solar cell
NL2019634B1 (en) 2017-09-27 2019-04-03 Univ Delft Tech Solar cells with transparent contacts based on poly-silicon-oxide
WO2019163784A1 (en) * 2018-02-23 2019-08-29 株式会社カネカ Method for manufacturing solar cell
CN111727508B (en) * 2018-02-23 2023-09-29 株式会社钟化 Method for manufacturing solar cell
CN108666377A (en) * 2018-07-11 2018-10-16 泰州隆基乐叶光伏科技有限公司 A kind of p-type back contacts solar cell and preparation method thereof
CN108807565B (en) * 2018-07-13 2024-04-16 苏州太阳井新能源有限公司 Passivation contact electrode structure, solar cell applicable to passivation contact electrode structure and manufacturing method of passivation contact electrode structure
CN110911505A (en) * 2019-12-19 2020-03-24 通威太阳能(眉山)有限公司 Heterojunction solar cell and manufacturing method thereof
CN114725225A (en) * 2021-01-06 2022-07-08 浙江爱旭太阳能科技有限公司 Efficient P-type IBC battery and preparation method thereof
CN114256385B (en) * 2021-12-22 2024-01-09 韩华新能源（启东）有限公司 TBC back contact solar cell and preparation method thereof
CN114649425B (en) * 2022-05-20 2022-08-26 正泰新能科技有限公司 TopCon crystalline silicon solar cell and preparation method thereof
CN116110996A (en) * 2022-10-28 2023-05-12 天合光能股份有限公司 Solar cell and preparation method thereof
CN116110978B (en) * 2023-02-08 2024-05-28 浙江晶科能源有限公司 Solar cell, preparation method thereof and photovoltaic module

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EP2239788A4 (en) * 2008-01-30 2017-07-12 Kyocera Corporation Solar battery element and solar battery element manufacturing method
GB2491209B (en) * 2011-05-27 2013-08-21 Renewable Energy Corp Asa Solar cell and method for producing same
CN104137269B (en) * 2012-05-14 2016-12-28 三菱电机株式会社 Photo-electric conversion device and manufacture method, light-to-current inversion module
US9312406B2 (en) * 2012-12-19 2016-04-12 Sunpower Corporation Hybrid emitter all back contact solar cell
KR101613843B1 (en) * 2013-04-23 2016-04-20 엘지전자 주식회사 Solar cell and method for manufacturing the same
CN103346211B (en) * 2013-06-26 2015-12-23 英利集团有限公司 A kind of back contact solar cell and preparation method thereof
KR101622089B1 (en) * 2013-07-05 2016-05-18 엘지전자 주식회사 Solar cell and method for manufacturing the same
KR101627204B1 (en) * 2013-11-28 2016-06-03 엘지전자 주식회사 Solar cell and method for manufacturing the same

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NL2013722B1 (en) 2016-10-04
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