JP2015119093A5 - - Google Patents

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Publication number
JP2015119093A5
JP2015119093A5 JP2013262598A JP2013262598A JP2015119093A5 JP 2015119093 A5 JP2015119093 A5 JP 2015119093A5 JP 2013262598 A JP2013262598 A JP 2013262598A JP 2013262598 A JP2013262598 A JP 2013262598A JP 2015119093 A5 JP2015119093 A5 JP 2015119093A5
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JP
Japan
Prior art keywords
semiconductor region
semiconductor
signal readout
readout wiring
photodetector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2013262598A
Other languages
English (en)
Japanese (ja)
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JP2015119093A (ja
JP6162595B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from JP2013262598A external-priority patent/JP6162595B2/ja
Priority to JP2013262598A priority Critical patent/JP6162595B2/ja
Priority to PCT/JP2014/083269 priority patent/WO2015093482A1/ja
Priority to US15/104,359 priority patent/US9825083B2/en
Priority to EP21159894.1A priority patent/EP3848980B1/en
Priority to CN201480068840.XA priority patent/CN105830232B/zh
Priority to EP14871693.9A priority patent/EP3086375B1/en
Priority to TW103144638A priority patent/TWI586990B/zh
Publication of JP2015119093A publication Critical patent/JP2015119093A/ja
Publication of JP2015119093A5 publication Critical patent/JP2015119093A5/ja
Publication of JP6162595B2 publication Critical patent/JP6162595B2/ja
Application granted granted Critical
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2013262598A 2013-12-19 2013-12-19 光検出器 Active JP6162595B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2013262598A JP6162595B2 (ja) 2013-12-19 2013-12-19 光検出器
CN201480068840.XA CN105830232B (zh) 2013-12-19 2014-12-16 光检测器
US15/104,359 US9825083B2 (en) 2013-12-19 2014-12-16 Optical detector with photodiode array having avalanche photodiodes connected to quenching resistors
EP21159894.1A EP3848980B1 (en) 2013-12-19 2014-12-16 Optical detector
PCT/JP2014/083269 WO2015093482A1 (ja) 2013-12-19 2014-12-16 光検出器
EP14871693.9A EP3086375B1 (en) 2013-12-19 2014-12-16 Optical detector
TW103144638A TWI586990B (zh) 2013-12-19 2014-12-19 Photodetector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013262598A JP6162595B2 (ja) 2013-12-19 2013-12-19 光検出器

Publications (3)

Publication Number Publication Date
JP2015119093A JP2015119093A (ja) 2015-06-25
JP2015119093A5 true JP2015119093A5 (enExample) 2015-12-10
JP6162595B2 JP6162595B2 (ja) 2017-07-12

Family

ID=53402827

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013262598A Active JP6162595B2 (ja) 2013-12-19 2013-12-19 光検出器

Country Status (6)

Country Link
US (1) US9825083B2 (enExample)
EP (2) EP3848980B1 (enExample)
JP (1) JP6162595B2 (enExample)
CN (1) CN105830232B (enExample)
TW (1) TWI586990B (enExample)
WO (1) WO2015093482A1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013145011A1 (ja) * 2012-03-29 2013-10-03 株式会社島津製作所 半導体光電子増倍素子
WO2017037968A1 (ja) * 2015-09-02 2017-03-09 ソニー株式会社 測距装置および測距方法
CN108287336B (zh) * 2018-01-26 2020-05-19 华中科技大学 一种面阵盖革apd激光雷达距离像强度像生成系统
JP7169071B2 (ja) * 2018-02-06 2022-11-10 ソニーセミコンダクタソリューションズ株式会社 画素構造、撮像素子、撮像装置、および電子機器
JP7441086B2 (ja) * 2020-03-23 2024-02-29 株式会社東芝 光検出器、光検出システム、ライダー装置、及び車
CN111682086A (zh) * 2020-07-23 2020-09-18 云南大学 一种自由运行模式下的负反馈雪崩光电二极管
JP7431699B2 (ja) * 2020-08-20 2024-02-15 株式会社東芝 光検出器、光検出システム、ライダー装置、及び車
JP7548777B2 (ja) * 2020-11-04 2024-09-10 浜松ホトニクス株式会社 光検出器、放射線検出器及びpet装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2008048694A2 (en) * 2006-02-01 2008-04-24 Koninklijke Philips Electronics, N.V. Geiger mode avalanche photodiode
EP3002794B1 (en) 2006-07-03 2020-08-19 Hamamatsu Photonics K.K. Photodiode array
US7652257B2 (en) 2007-06-15 2010-01-26 General Electric Company Structure of a solid state photomultiplier
GB201004922D0 (en) * 2010-03-24 2010-05-12 Sensl Technologies Ltd Silicon photomultiplier and readout method
GB201014843D0 (en) * 2010-09-08 2010-10-20 Univ Edinburgh Single photon avalanche diode for CMOS circuits
JP5562207B2 (ja) 2010-10-29 2014-07-30 浜松ホトニクス株式会社 フォトダイオードアレイ
JP5808592B2 (ja) * 2011-07-04 2015-11-10 浜松ホトニクス株式会社 基準電圧決定方法及び推奨動作電圧決定方法
US8871557B2 (en) * 2011-09-02 2014-10-28 Electronics And Telecommunications Research Institute Photomultiplier and manufacturing method thereof
JP5869293B2 (ja) * 2011-10-19 2016-02-24 浜松ホトニクス株式会社 放射線検出装置
JP5832852B2 (ja) * 2011-10-21 2015-12-16 浜松ホトニクス株式会社 光検出装置
JP5749675B2 (ja) * 2012-03-21 2015-07-15 株式会社東芝 放射線検出装置及びct装置
JP2015081863A (ja) * 2013-10-23 2015-04-27 株式会社東芝 光検出器

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