JP6162595B2 - 光検出器 - Google Patents

光検出器 Download PDF

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Publication number
JP6162595B2
JP6162595B2 JP2013262598A JP2013262598A JP6162595B2 JP 6162595 B2 JP6162595 B2 JP 6162595B2 JP 2013262598 A JP2013262598 A JP 2013262598A JP 2013262598 A JP2013262598 A JP 2013262598A JP 6162595 B2 JP6162595 B2 JP 6162595B2
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JP
Japan
Prior art keywords
semiconductor region
semiconductor
signal readout
readout wiring
photodetector
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JP2013262598A
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English (en)
Japanese (ja)
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JP2015119093A (ja
JP2015119093A5 (enExample
Inventor
輝昌 永野
輝昌 永野
健一 里
健一 里
龍太郎 土屋
龍太郎 土屋
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Hamamatsu Photonics KK
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Hamamatsu Photonics KK
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Publication date
Priority to JP2013262598A priority Critical patent/JP6162595B2/ja
Application filed by Hamamatsu Photonics KK filed Critical Hamamatsu Photonics KK
Priority to EP14871693.9A priority patent/EP3086375B1/en
Priority to CN201480068840.XA priority patent/CN105830232B/zh
Priority to PCT/JP2014/083269 priority patent/WO2015093482A1/ja
Priority to US15/104,359 priority patent/US9825083B2/en
Priority to EP21159894.1A priority patent/EP3848980B1/en
Priority to TW103144638A priority patent/TWI586990B/zh
Publication of JP2015119093A publication Critical patent/JP2015119093A/ja
Publication of JP2015119093A5 publication Critical patent/JP2015119093A5/ja
Application granted granted Critical
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/189—X-ray, gamma-ray or corpuscular radiation imagers
    • H10F39/1898—Indirect radiation image sensors, e.g. using luminescent members
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/225—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes
    • H10F30/2255—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes in which the active layers form heterostructures, e.g. SAM structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/29—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/107—Integrated devices having multiple elements covered by H10F30/00 in a repetitive configuration, e.g. radiation detectors comprising photodiode arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/189—X-ray, gamma-ray or corpuscular radiation imagers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/191—Photoconductor image sensors
    • H10F39/195—X-ray, gamma-ray or corpuscular radiation imagers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections

Landscapes

  • Nuclear Medicine (AREA)
  • Measurement Of Radiation (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
JP2013262598A 2013-12-19 2013-12-19 光検出器 Active JP6162595B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2013262598A JP6162595B2 (ja) 2013-12-19 2013-12-19 光検出器
CN201480068840.XA CN105830232B (zh) 2013-12-19 2014-12-16 光检测器
PCT/JP2014/083269 WO2015093482A1 (ja) 2013-12-19 2014-12-16 光検出器
US15/104,359 US9825083B2 (en) 2013-12-19 2014-12-16 Optical detector with photodiode array having avalanche photodiodes connected to quenching resistors
EP14871693.9A EP3086375B1 (en) 2013-12-19 2014-12-16 Optical detector
EP21159894.1A EP3848980B1 (en) 2013-12-19 2014-12-16 Optical detector
TW103144638A TWI586990B (zh) 2013-12-19 2014-12-19 Photodetector

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013262598A JP6162595B2 (ja) 2013-12-19 2013-12-19 光検出器

Publications (3)

Publication Number Publication Date
JP2015119093A JP2015119093A (ja) 2015-06-25
JP2015119093A5 JP2015119093A5 (enExample) 2015-12-10
JP6162595B2 true JP6162595B2 (ja) 2017-07-12

Family

ID=53402827

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013262598A Active JP6162595B2 (ja) 2013-12-19 2013-12-19 光検出器

Country Status (6)

Country Link
US (1) US9825083B2 (enExample)
EP (2) EP3086375B1 (enExample)
JP (1) JP6162595B2 (enExample)
CN (1) CN105830232B (enExample)
TW (1) TWI586990B (enExample)
WO (1) WO2015093482A1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2816800B1 (en) * 2012-03-29 2019-06-26 Shimadzu Corporation Semiconductor photomultiplier element
DE112016003988T5 (de) * 2015-09-02 2018-05-17 Sony Corporation Distanzmessvorrichtung und distanzmessverfahren
CN108287336B (zh) * 2018-01-26 2020-05-19 华中科技大学 一种面阵盖革apd激光雷达距离像强度像生成系统
JP7169071B2 (ja) * 2018-02-06 2022-11-10 ソニーセミコンダクタソリューションズ株式会社 画素構造、撮像素子、撮像装置、および電子機器
JP7441086B2 (ja) * 2020-03-23 2024-02-29 株式会社東芝 光検出器、光検出システム、ライダー装置、及び車
CN111682086A (zh) * 2020-07-23 2020-09-18 云南大学 一种自由运行模式下的负反馈雪崩光电二极管
JP7431699B2 (ja) * 2020-08-20 2024-02-15 株式会社東芝 光検出器、光検出システム、ライダー装置、及び車
JP7548777B2 (ja) * 2020-11-04 2024-09-10 浜松ホトニクス株式会社 光検出器、放射線検出器及びｐｅｔ装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2416840C2 (ru) * 2006-02-01 2011-04-20 Конинклейке Филипс Электроникс, Н.В. Лавинный фотодиод в режиме счетчика гейгера
TWI523209B (zh) 2006-07-03 2016-02-21 濱松赫德尼古斯股份有限公司 光二極體陣列
US7652257B2 (en) 2007-06-15 2010-01-26 General Electric Company Structure of a solid state photomultiplier
GB201004922D0 (en) * 2010-03-24 2010-05-12 Sensl Technologies Ltd Silicon photomultiplier and readout method
GB201014843D0 (en) * 2010-09-08 2010-10-20 Univ Edinburgh Single photon avalanche diode for CMOS circuits
JP5562207B2 (ja) 2010-10-29 2014-07-30 浜松ホトニクス株式会社 フォトダイオードアレイ
JP5808592B2 (ja) * 2011-07-04 2015-11-10 浜松ホトニクス株式会社 基準電圧決定方法及び推奨動作電圧決定方法
US8871557B2 (en) * 2011-09-02 2014-10-28 Electronics And Telecommunications Research Institute Photomultiplier and manufacturing method thereof
JP5869293B2 (ja) * 2011-10-19 2016-02-24 浜松ホトニクス株式会社 放射線検出装置
JP5832852B2 (ja) * 2011-10-21 2015-12-16 浜松ホトニクス株式会社 光検出装置
JP5749675B2 (ja) * 2012-03-21 2015-07-15 株式会社東芝 放射線検出装置及びｃｔ装置
JP2015081863A (ja) * 2013-10-23 2015-04-27 株式会社東芝 光検出器

Also Published As

Publication number Publication date
WO2015093482A1 (ja) 2015-06-25
JP2015119093A (ja) 2015-06-25
EP3086375A1 (en) 2016-10-26
US9825083B2 (en) 2017-11-21
EP3086375B1 (en) 2021-03-31
EP3848980B1 (en) 2024-07-24
TWI586990B (zh) 2017-06-11
US20160322417A1 (en) 2016-11-03
EP3086375A4 (en) 2017-11-15
CN105830232B (zh) 2018-04-17
CN105830232A (zh) 2016-08-03
TW201534954A (zh) 2015-09-16
EP3848980A1 (en) 2021-07-14

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