CN105830232B - 光检测器 - Google Patents

光检测器 Download PDF

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Publication number
CN105830232B
CN105830232B CN201480068840.XA CN201480068840A CN105830232B CN 105830232 B CN105830232 B CN 105830232B CN 201480068840 A CN201480068840 A CN 201480068840A CN 105830232 B CN105830232 B CN 105830232B
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China
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semiconductor regions
semiconductor region
photodetector
signal
semiconductor
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CN201480068840.XA
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English (en)
Chinese (zh)
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CN105830232A (zh
Inventor
永野辉昌
里健
里健一
土屋龙太郎
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Hamamatsu Photonics KK
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Hamamatsu Photonics KK
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/189—X-ray, gamma-ray or corpuscular radiation imagers
    • H10F39/1898—Indirect radiation image sensors, e.g. using luminescent members
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/225—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes
    • H10F30/2255—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes in which the active layers form heterostructures, e.g. SAM structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/29—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/107—Integrated devices having multiple elements covered by H10F30/00 in a repetitive configuration, e.g. radiation detectors comprising photodiode arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/189—X-ray, gamma-ray or corpuscular radiation imagers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/191—Photoconductor image sensors
    • H10F39/195—X-ray, gamma-ray or corpuscular radiation imagers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections

Landscapes

  • Nuclear Medicine (AREA)
  • Measurement Of Radiation (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
CN201480068840.XA 2013-12-19 2014-12-16 光检测器 Active CN105830232B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2013262598A JP6162595B2 (ja) 2013-12-19 2013-12-19 光検出器
JP2013-262598 2013-12-19
PCT/JP2014/083269 WO2015093482A1 (ja) 2013-12-19 2014-12-16 光検出器

Publications (2)

Publication Number Publication Date
CN105830232A CN105830232A (zh) 2016-08-03
CN105830232B true CN105830232B (zh) 2018-04-17

Family

ID=53402827

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201480068840.XA Active CN105830232B (zh) 2013-12-19 2014-12-16 光检测器

Country Status (6)

Country Link
US (1) US9825083B2 (enExample)
EP (2) EP3848980B1 (enExample)
JP (1) JP6162595B2 (enExample)
CN (1) CN105830232B (enExample)
TW (1) TWI586990B (enExample)
WO (1) WO2015093482A1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104054326B (zh) * 2012-03-29 2017-10-13 株式会社岛津制作所 半导体光电倍增元件
US10852401B2 (en) 2015-09-02 2020-12-01 Sony Corporation Distance measurement apparatus and distance measurement method
CN108287336B (zh) * 2018-01-26 2020-05-19 华中科技大学 一种面阵盖革apd激光雷达距离像强度像生成系统
JP7169071B2 (ja) * 2018-02-06 2022-11-10 ソニーセミコンダクタソリューションズ株式会社 画素構造、撮像素子、撮像装置、および電子機器
JP7441086B2 (ja) * 2020-03-23 2024-02-29 株式会社東芝 光検出器、光検出システム、ライダー装置、及び車
CN111682086A (zh) * 2020-07-23 2020-09-18 云南大学 一种自由运行模式下的负反馈雪崩光电二极管
JP7431699B2 (ja) * 2020-08-20 2024-02-15 株式会社東芝 光検出器、光検出システム、ライダー装置、及び車
JP7548777B2 (ja) * 2020-11-04 2024-09-10 浜松ホトニクス株式会社 光検出器、放射線検出器及びｐｅｔ装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008311651A (ja) * 2007-06-15 2008-12-25 General Electric Co <Ge> 半導体光電子増倍器の構造
US20130009266A1 (en) * 2011-07-04 2013-01-10 Hamamatsu Photonics K.K. Photodiode array, method for determining reference voltage, and method for determining recommended operating voltage
CN103190000A (zh) * 2010-10-29 2013-07-03 浜松光子学株式会社 光电二极管阵列
JP2013195295A (ja) * 2012-03-21 2013-09-30 Toshiba Corp 放射線検出装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009525619A (ja) * 2006-02-01 2009-07-09 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ ガイガーモード・アバランシェ・フォトダイオード
TWI523209B (zh) 2006-07-03 2016-02-21 濱松赫德尼古斯股份有限公司 光二極體陣列
GB201004922D0 (en) * 2010-03-24 2010-05-12 Sensl Technologies Ltd Silicon photomultiplier and readout method
GB201014843D0 (en) * 2010-09-08 2010-10-20 Univ Edinburgh Single photon avalanche diode for CMOS circuits
US8871557B2 (en) * 2011-09-02 2014-10-28 Electronics And Telecommunications Research Institute Photomultiplier and manufacturing method thereof
JP5869293B2 (ja) * 2011-10-19 2016-02-24 浜松ホトニクス株式会社 放射線検出装置
JP5832852B2 (ja) * 2011-10-21 2015-12-16 浜松ホトニクス株式会社 光検出装置
JP2015081863A (ja) * 2013-10-23 2015-04-27 株式会社東芝 光検出器

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008311651A (ja) * 2007-06-15 2008-12-25 General Electric Co <Ge> 半導体光電子増倍器の構造
CN103190000A (zh) * 2010-10-29 2013-07-03 浜松光子学株式会社 光电二极管阵列
US20130009266A1 (en) * 2011-07-04 2013-01-10 Hamamatsu Photonics K.K. Photodiode array, method for determining reference voltage, and method for determining recommended operating voltage
JP2013195295A (ja) * 2012-03-21 2013-09-30 Toshiba Corp 放射線検出装置

Also Published As

Publication number Publication date
US9825083B2 (en) 2017-11-21
TW201534954A (zh) 2015-09-16
JP2015119093A (ja) 2015-06-25
EP3848980B1 (en) 2024-07-24
US20160322417A1 (en) 2016-11-03
TWI586990B (zh) 2017-06-11
JP6162595B2 (ja) 2017-07-12
WO2015093482A1 (ja) 2015-06-25
EP3848980A1 (en) 2021-07-14
EP3086375A4 (en) 2017-11-15
EP3086375A1 (en) 2016-10-26
CN105830232A (zh) 2016-08-03
EP3086375B1 (en) 2021-03-31

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