TWI586990B - Photodetector - Google Patents

Photodetector Download PDF

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Publication number
TWI586990B
TWI586990B TW103144638A TW103144638A TWI586990B TW I586990 B TWI586990 B TW I586990B TW 103144638 A TW103144638 A TW 103144638A TW 103144638 A TW103144638 A TW 103144638A TW I586990 B TWI586990 B TW I586990B
Authority
TW
Taiwan
Prior art keywords
semiconductor region
semiconductor
signal readout
readout wiring
photodetector
Prior art date
Application number
TW103144638A
Other languages
English (en)
Chinese (zh)
Other versions
TW201534954A (zh
Inventor
Terumasa Nagano
Kenichi Sato
Ryutaro Tsuchiya
Original Assignee
Hamamatsu Photonics Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hamamatsu Photonics Kk filed Critical Hamamatsu Photonics Kk
Publication of TW201534954A publication Critical patent/TW201534954A/zh
Application granted granted Critical
Publication of TWI586990B publication Critical patent/TWI586990B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/189—X-ray, gamma-ray or corpuscular radiation imagers
    • H10F39/1898—Indirect radiation image sensors, e.g. using luminescent members
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/225—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes
    • H10F30/2255—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes in which the active layers form heterostructures, e.g. SAM structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/29—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/107—Integrated devices having multiple elements covered by H10F30/00 in a repetitive configuration, e.g. radiation detectors comprising photodiode arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/189—X-ray, gamma-ray or corpuscular radiation imagers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/191—Photoconductor image sensors
    • H10F39/195—X-ray, gamma-ray or corpuscular radiation imagers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections

Landscapes

  • Nuclear Medicine (AREA)
  • Measurement Of Radiation (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
TW103144638A 2013-12-19 2014-12-19 Photodetector TWI586990B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013262598A JP6162595B2 (ja) 2013-12-19 2013-12-19 光検出器

Publications (2)

Publication Number Publication Date
TW201534954A TW201534954A (zh) 2015-09-16
TWI586990B true TWI586990B (zh) 2017-06-11

Family

ID=53402827

Family Applications (1)

Application Number Title Priority Date Filing Date
TW103144638A TWI586990B (zh) 2013-12-19 2014-12-19 Photodetector

Country Status (6)

Country Link
US (1) US9825083B2 (enExample)
EP (2) EP3086375B1 (enExample)
JP (1) JP6162595B2 (enExample)
CN (1) CN105830232B (enExample)
TW (1) TWI586990B (enExample)
WO (1) WO2015093482A1 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2816800B1 (en) * 2012-03-29 2019-06-26 Shimadzu Corporation Semiconductor photomultiplier element
WO2017037968A1 (ja) * 2015-09-02 2017-03-09 ソニー株式会社 測距装置および測距方法
CN108287336B (zh) * 2018-01-26 2020-05-19 华中科技大学 一种面阵盖革apd激光雷达距离像强度像生成系统
JP7169071B2 (ja) 2018-02-06 2022-11-10 ソニーセミコンダクタソリューションズ株式会社 画素構造、撮像素子、撮像装置、および電子機器
JP7441086B2 (ja) * 2020-03-23 2024-02-29 株式会社東芝 光検出器、光検出システム、ライダー装置、及び車
CN111682086A (zh) * 2020-07-23 2020-09-18 云南大学 一种自由运行模式下的负反馈雪崩光电二极管
JP7431699B2 (ja) * 2020-08-20 2024-02-15 株式会社東芝 光検出器、光検出システム、ライダー装置、及び車
JP7548777B2 (ja) * 2020-11-04 2024-09-10 浜松ホトニクス株式会社 光検出器、放射線検出器及びｐｅｔ装置
JP7854276B2 (ja) * 2021-09-22 2026-05-01 浜松ホトニクス株式会社 放射線検出器及び放射線検出器アレイ

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201232800A (en) * 2010-10-29 2012-08-01 Hamamatsu Photonics Kk Photodiode array

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009525619A (ja) * 2006-02-01 2009-07-09 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ ガイガーモード・アバランシェ・フォトダイオード
CN101484999B (zh) * 2006-07-03 2011-09-14 浜松光子学株式会社 光电二极管阵列
US7652257B2 (en) * 2007-06-15 2010-01-26 General Electric Company Structure of a solid state photomultiplier
GB201004922D0 (en) * 2010-03-24 2010-05-12 Sensl Technologies Ltd Silicon photomultiplier and readout method
GB201014843D0 (en) * 2010-09-08 2010-10-20 Univ Edinburgh Single photon avalanche diode for CMOS circuits
JP5808592B2 (ja) * 2011-07-04 2015-11-10 浜松ホトニクス株式会社 基準電圧決定方法及び推奨動作電圧決定方法
US8871557B2 (en) * 2011-09-02 2014-10-28 Electronics And Telecommunications Research Institute Photomultiplier and manufacturing method thereof
JP5869293B2 (ja) * 2011-10-19 2016-02-24 浜松ホトニクス株式会社 放射線検出装置
JP5832852B2 (ja) * 2011-10-21 2015-12-16 浜松ホトニクス株式会社 光検出装置
JP5749675B2 (ja) * 2012-03-21 2015-07-15 株式会社東芝 放射線検出装置及びｃｔ装置
JP2015081863A (ja) * 2013-10-23 2015-04-27 株式会社東芝 光検出器

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201232800A (en) * 2010-10-29 2012-08-01 Hamamatsu Photonics Kk Photodiode array

Also Published As

Publication number Publication date
EP3086375B1 (en) 2021-03-31
EP3848980A1 (en) 2021-07-14
EP3086375A4 (en) 2017-11-15
WO2015093482A1 (ja) 2015-06-25
TW201534954A (zh) 2015-09-16
EP3086375A1 (en) 2016-10-26
CN105830232B (zh) 2018-04-17
US20160322417A1 (en) 2016-11-03
JP2015119093A (ja) 2015-06-25
JP6162595B2 (ja) 2017-07-12
EP3848980B1 (en) 2024-07-24
US9825083B2 (en) 2017-11-21
CN105830232A (zh) 2016-08-03

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