JP2015119093A - 光検出器 - Google Patents
光検出器 Download PDFInfo
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- JP2015119093A JP2015119093A JP2013262598A JP2013262598A JP2015119093A JP 2015119093 A JP2015119093 A JP 2015119093A JP 2013262598 A JP2013262598 A JP 2013262598A JP 2013262598 A JP2013262598 A JP 2013262598A JP 2015119093 A JP2015119093 A JP 2015119093A
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- 239000004065 semiconductor Substances 0.000 claims abstract description 201
- 238000010791 quenching Methods 0.000 claims abstract description 56
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- 229910004298 SiO 2 Inorganic materials 0.000 description 2
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
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- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14658—X-ray, gamma-ray or corpuscular radiation imagers
- H01L27/14663—Indirect radiation imagers, e.g. using luminescent members
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- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
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- H01L27/144—Devices controlled by radiation
- H01L27/1446—Devices controlled by radiation in a repetitive configuration
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- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
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- H01L27/144—Devices controlled by radiation
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- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14658—X-ray, gamma-ray or corpuscular radiation imagers
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- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
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- H01L31/1075—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes in which the active layers, e.g. absorption or multiplication layers, form an heterostructure, e.g. SAM structure
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- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Nuclear Medicine (AREA)
- Measurement Of Radiation (AREA)
- Light Receiving Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
Description
(導電型/不純物濃度/厚み)
(n型/5×1011〜1×1020cm−3/30〜700μm)
半導体領域13
(導電型/不純物濃度/厚み)
(p型/1×1014〜1×1017cm−3/2〜50μm)
半導体領域14
(導電型/不純物濃度/厚み)
(p型/1×1018〜1×1020cm−3/10〜1000nm)
(タイプ2)
半導体領域12
(導電型/不純物濃度/厚み)
(p型/5×1011〜1×1020cm−3/30〜700μm)
半導体領域13
(導電型/不純物濃度/厚み)
(n型/1×1014〜1×1017cm−3/2〜50μm)
半導体領域14
(導電型/不純物濃度/厚み)
(n型/1×1018〜1×1020cm−3/10〜1000nm)
(タイプ3)
半導体領域12
(導電型/不純物濃度/厚み)
(n型/5×1011〜1×1020cm−3/30〜700μm)
半導体領域13
(導電型/不純物濃度/厚み)
(n型/1×1014〜1×1017cm−3/2〜50μm)
半導体領域14
(導電型/不純物濃度/厚み)
(p型/1×1018〜1×1020cm−3/10〜1000nm)
(タイプ4)
半導体領域12
(導電型/不純物濃度/厚み)
(p型/5×1011〜1×1020cm−3/30〜700μm)
半導体領域13
(導電型/不純物濃度/厚み)
(p型/1×1014〜1×1017cm−3/2〜50μm)
半導体領域14
(導電型/不純物濃度/厚み)
(n型/1×1018〜1×1020cm−3/10〜1000nm)
Claims (4)
- 半導体基板と、
前記半導体基板上に形成された第1半導体領域と、
前記第1半導体領域内に二次元状に複数形成され、前記第1半導体領域よりも不純物濃度が高い第2半導体領域と、
個々の前記第2半導体領域にそれぞれ電気的に接続された複数のクエンチング抵抗と、
複数の前記クエンチング抵抗に電気的に接続された信号読出配線と、
を備え、
前記半導体基板と前記第1半導体領域との間の界面、又は、前記第1半導体領域と前記第2半導体領域との間の界面において、ガイガーモードで動作するAPDを構成するpn接合が形成された光検出器であって、
前記クエンチング抵抗は、前記第2半導体領域上に位置しており、且つ、
平面視において、
前記信号読出配線は、
個々の前記第2半導体領域の周囲をリング状に囲むと共に、
前記第2半導体領域と前記第1半導体領域との間の境界線を覆っている、
ことを特徴とする光検出器。 - 平面視において、
前記信号読出配線は、
前記第2半導体領域と前記第1半導体領域との間の境界線を全て覆っている、
ことを特徴とする請求項1に記載の光検出器。 - 平面視において、
前記信号読出配線は、
前記第2半導体領域と前記第1半導体領域との間の境界線のうち一部のみを覆っており、
前記信号読出配線における前記覆っている部分の前記信号読出配線の幅方向の寸法は、この部分に隣接する部分の幅方向の寸法よりも大きい、
ことを特徴とする請求項1に記載の光検出器。 - 半導体基板と、
前記半導体基板上に形成された第1半導体領域と、
前記第1半導体領域内に二次元状に複数形成され、前記第1半導体領域よりも不純物濃度が高い第2半導体領域と、
個々の前記第2半導体領域にそれぞれ電気的に接続された複数のクエンチング抵抗と、
複数の前記クエンチング抵抗に電気的に接続された信号読出配線と、
を備え、
前記半導体基板と前記第1半導体領域との間の界面、又は、前記第1半導体領域と前記第2半導体領域との間の界面において、ガイガーモードで動作するAPDを構成するpn接合が形成された光検出器であって、
平面視において、
前記信号読出配線は、個々の前記第2半導体領域の周囲をリング状に囲むと共に、
個々の前記クエンチング抵抗は、屈曲すること無く直線的に延びている、
ことを特徴とする光検出器。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013262598A JP6162595B2 (ja) | 2013-12-19 | 2013-12-19 | 光検出器 |
US15/104,359 US9825083B2 (en) | 2013-12-19 | 2014-12-16 | Optical detector with photodiode array having avalanche photodiodes connected to quenching resistors |
EP14871693.9A EP3086375B1 (en) | 2013-12-19 | 2014-12-16 | Optical detector |
EP21159894.1A EP3848980A1 (en) | 2013-12-19 | 2014-12-16 | Optical detector |
CN201480068840.XA CN105830232B (zh) | 2013-12-19 | 2014-12-16 | 光检测器 |
PCT/JP2014/083269 WO2015093482A1 (ja) | 2013-12-19 | 2014-12-16 | 光検出器 |
TW103144638A TWI586990B (zh) | 2013-12-19 | 2014-12-19 | Photodetector |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013262598A JP6162595B2 (ja) | 2013-12-19 | 2013-12-19 | 光検出器 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2015119093A true JP2015119093A (ja) | 2015-06-25 |
JP2015119093A5 JP2015119093A5 (ja) | 2015-12-10 |
JP6162595B2 JP6162595B2 (ja) | 2017-07-12 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013262598A Active JP6162595B2 (ja) | 2013-12-19 | 2013-12-19 | 光検出器 |
Country Status (6)
Country | Link |
---|---|
US (1) | US9825083B2 (ja) |
EP (2) | EP3848980A1 (ja) |
JP (1) | JP6162595B2 (ja) |
CN (1) | CN105830232B (ja) |
TW (1) | TWI586990B (ja) |
WO (1) | WO2015093482A1 (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2017037968A1 (ja) * | 2015-09-02 | 2017-03-09 | ソニー株式会社 | 測距装置および測距方法 |
JP2019140132A (ja) * | 2018-02-06 | 2019-08-22 | ソニーセミコンダクタソリューションズ株式会社 | 画素構造、撮像素子、撮像装置、および電子機器 |
JP2021150563A (ja) * | 2020-03-23 | 2021-09-27 | 株式会社東芝 | 光検出器、光検出システム、ライダー装置、及び車 |
WO2022097358A1 (ja) * | 2020-11-04 | 2022-05-12 | 浜松ホトニクス株式会社 | 光検出器、放射線検出器及びpet装置 |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5741769B2 (ja) * | 2012-03-29 | 2015-07-01 | 株式会社島津製作所 | 半導体光電子増倍素子 |
CN108287336B (zh) * | 2018-01-26 | 2020-05-19 | 华中科技大学 | 一种面阵盖革apd激光雷达距离像强度像生成系统 |
CN111682086A (zh) * | 2020-07-23 | 2020-09-18 | 云南大学 | 一种自由运行模式下的负反馈雪崩光电二极管 |
JP7431699B2 (ja) * | 2020-08-20 | 2024-02-15 | 株式会社東芝 | 光検出器、光検出システム、ライダー装置、及び車 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2012057082A1 (ja) * | 2010-10-29 | 2012-05-03 | 浜松ホトニクス株式会社 | フォトダイオードアレイ |
US20130056843A1 (en) * | 2011-09-02 | 2013-03-07 | Electronics And Telecomunications Research Institute | Photomultiplier and manufacturing method thereof |
JP2013088319A (ja) * | 2011-10-19 | 2013-05-13 | Hamamatsu Photonics Kk | 放射線検出装置 |
JP2013195295A (ja) * | 2012-03-21 | 2013-09-30 | Toshiba Corp | 放射線検出装置 |
Family Cites Families (8)
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RU2416840C2 (ru) * | 2006-02-01 | 2011-04-20 | Конинклейке Филипс Электроникс, Н.В. | Лавинный фотодиод в режиме счетчика гейгера |
WO2008004547A1 (fr) * | 2006-07-03 | 2008-01-10 | Hamamatsu Photonics K.K. | Ensemble photodiode |
US7652257B2 (en) | 2007-06-15 | 2010-01-26 | General Electric Company | Structure of a solid state photomultiplier |
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US9825083B2 (en) | 2017-11-21 |
EP3086375A4 (en) | 2017-11-15 |
US20160322417A1 (en) | 2016-11-03 |
EP3848980A1 (en) | 2021-07-14 |
CN105830232A (zh) | 2016-08-03 |
TW201534954A (zh) | 2015-09-16 |
WO2015093482A1 (ja) | 2015-06-25 |
EP3086375B1 (en) | 2021-03-31 |
EP3086375A1 (en) | 2016-10-26 |
JP6162595B2 (ja) | 2017-07-12 |
TWI586990B (zh) | 2017-06-11 |
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