JP2012256402A - 記憶装置、及び半導体装置 - Google Patents
記憶装置、及び半導体装置 Download PDFInfo
- Publication number
- JP2012256402A JP2012256402A JP2011245230A JP2011245230A JP2012256402A JP 2012256402 A JP2012256402 A JP 2012256402A JP 2011245230 A JP2011245230 A JP 2011245230A JP 2011245230 A JP2011245230 A JP 2011245230A JP 2012256402 A JP2012256402 A JP 2012256402A
- Authority
- JP
- Japan
- Prior art keywords
- film
- oxide semiconductor
- transistor
- insulating film
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 465
- 239000003990 capacitor Substances 0.000 claims abstract description 128
- 239000001257 hydrogen Substances 0.000 claims description 49
- 229910052739 hydrogen Inorganic materials 0.000 claims description 49
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 39
- 229910052738 indium Inorganic materials 0.000 claims description 29
- 238000003860 storage Methods 0.000 claims description 29
- 229910052725 zinc Inorganic materials 0.000 claims description 26
- 229910052733 gallium Inorganic materials 0.000 claims description 21
- 238000000034 method Methods 0.000 abstract description 46
- 230000008569 process Effects 0.000 abstract description 15
- 239000010408 film Substances 0.000 description 919
- 239000011701 zinc Substances 0.000 description 112
- 239000000758 substrate Substances 0.000 description 100
- 230000006870 function Effects 0.000 description 91
- 238000010438 heat treatment Methods 0.000 description 80
- 229910052760 oxygen Inorganic materials 0.000 description 74
- 239000001301 oxygen Substances 0.000 description 73
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 71
- 230000002829 reductive effect Effects 0.000 description 50
- 239000010410 layer Substances 0.000 description 39
- 238000004544 sputter deposition Methods 0.000 description 37
- 229910052751 metal Inorganic materials 0.000 description 36
- 239000002184 metal Substances 0.000 description 34
- 239000000203 mixture Substances 0.000 description 34
- 230000015572 biosynthetic process Effects 0.000 description 33
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 33
- 125000004430 oxygen atom Chemical group O* 0.000 description 32
- 239000012535 impurity Substances 0.000 description 31
- 239000007789 gas Substances 0.000 description 29
- 125000004429 atom Chemical group 0.000 description 27
- 239000013078 crystal Substances 0.000 description 26
- VUFNLQXQSDUXKB-DOFZRALJSA-N 2-[4-[4-[bis(2-chloroethyl)amino]phenyl]butanoyloxy]ethyl (5z,8z,11z,14z)-icosa-5,8,11,14-tetraenoate Chemical compound CCCCC\C=C/C\C=C/C\C=C/C\C=C/CCCC(=O)OCCOC(=O)CCCC1=CC=C(N(CCCl)CCCl)C=C1 VUFNLQXQSDUXKB-DOFZRALJSA-N 0.000 description 23
- 230000007547 defect Effects 0.000 description 23
- 239000012298 atmosphere Substances 0.000 description 22
- 239000000463 material Substances 0.000 description 22
- 229910052710 silicon Inorganic materials 0.000 description 22
- 239000010703 silicon Substances 0.000 description 22
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 21
- 229910020994 Sn-Zn Inorganic materials 0.000 description 21
- 229910009069 Sn—Zn Inorganic materials 0.000 description 21
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 20
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 20
- 239000012212 insulator Substances 0.000 description 19
- 229910052757 nitrogen Inorganic materials 0.000 description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 17
- 229910052718 tin Inorganic materials 0.000 description 17
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 15
- 238000005259 measurement Methods 0.000 description 14
- 229910052814 silicon oxide Inorganic materials 0.000 description 14
- 238000012360 testing method Methods 0.000 description 14
- 229910001195 gallium oxide Inorganic materials 0.000 description 13
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 12
- 239000002585 base Substances 0.000 description 12
- 238000010586 diagram Methods 0.000 description 12
- 238000005530 etching Methods 0.000 description 12
- 229910052719 titanium Inorganic materials 0.000 description 12
- 239000010936 titanium Substances 0.000 description 12
- 229910052581 Si3N4 Inorganic materials 0.000 description 11
- 229910052782 aluminium Inorganic materials 0.000 description 11
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 11
- 230000004888 barrier function Effects 0.000 description 11
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 11
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 10
- 229910052786 argon Inorganic materials 0.000 description 10
- 238000004364 calculation method Methods 0.000 description 10
- 150000002431 hydrogen Chemical class 0.000 description 10
- 239000011229 interlayer Substances 0.000 description 10
- 230000001681 protective effect Effects 0.000 description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 10
- 239000011787 zinc oxide Substances 0.000 description 10
- 150000001340 alkali metals Chemical class 0.000 description 9
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 9
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 9
- 229910018137 Al-Zn Inorganic materials 0.000 description 8
- 229910018573 Al—Zn Inorganic materials 0.000 description 8
- 229910052783 alkali metal Inorganic materials 0.000 description 8
- 239000000460 chlorine Substances 0.000 description 7
- 230000007423 decrease Effects 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- 239000011521 glass Substances 0.000 description 7
- 239000011734 sodium Substances 0.000 description 7
- 229910020868 Sn-Ga-Zn Inorganic materials 0.000 description 6
- 238000002441 X-ray diffraction Methods 0.000 description 6
- 230000014759 maintenance of location Effects 0.000 description 6
- 238000012545 processing Methods 0.000 description 6
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 6
- 239000010409 thin film Substances 0.000 description 6
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 6
- 229910052721 tungsten Inorganic materials 0.000 description 6
- 239000010937 tungsten Substances 0.000 description 6
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 5
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 5
- -1 In—Zn oxide Chemical class 0.000 description 5
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 5
- 229910052795 boron group element Inorganic materials 0.000 description 5
- 230000008859 change Effects 0.000 description 5
- 229910052801 chlorine Inorganic materials 0.000 description 5
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 5
- 229910052734 helium Inorganic materials 0.000 description 5
- 239000001307 helium Substances 0.000 description 5
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 5
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 5
- 239000011810 insulating material Substances 0.000 description 5
- 229910044991 metal oxide Inorganic materials 0.000 description 5
- 150000004706 metal oxides Chemical class 0.000 description 5
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 5
- 239000003381 stabilizer Substances 0.000 description 5
- 229910018120 Al-Ga-Zn Inorganic materials 0.000 description 4
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- 229910002601 GaN Inorganic materials 0.000 description 4
- 239000012300 argon atmosphere Substances 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 229910052735 hafnium Inorganic materials 0.000 description 4
- 238000009832 plasma treatment Methods 0.000 description 4
- 238000004151 rapid thermal annealing Methods 0.000 description 4
- 229910010271 silicon carbide Inorganic materials 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 3
- 206010021143 Hypoxia Diseases 0.000 description 3
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- 229910020833 Sn-Al-Zn Inorganic materials 0.000 description 3
- 229910020944 Sn-Mg Inorganic materials 0.000 description 3
- 229910009369 Zn Mg Inorganic materials 0.000 description 3
- 229910007573 Zn-Mg Inorganic materials 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 239000000470 constituent Substances 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 230000018044 dehydration Effects 0.000 description 3
- 238000006297 dehydration reaction Methods 0.000 description 3
- 238000006356 dehydrogenation reaction Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 229910001882 dioxygen Inorganic materials 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 230000002349 favourable effect Effects 0.000 description 3
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 3
- 150000004678 hydrides Chemical class 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- 229910003437 indium oxide Inorganic materials 0.000 description 3
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 3
- 238000005036 potential barrier Methods 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- 230000002441 reversible effect Effects 0.000 description 3
- 229910052708 sodium Inorganic materials 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- 229910052779 Neodymium Inorganic materials 0.000 description 2
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 2
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 229910005728 SnZn Inorganic materials 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 2
- 229910052754 neon Inorganic materials 0.000 description 2
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000003870 refractory metal Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 2
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 description 2
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- 238000012935 Averaging Methods 0.000 description 1
- CPELXLSAUQHCOX-UHFFFAOYSA-M Bromide Chemical compound [Br-] CPELXLSAUQHCOX-UHFFFAOYSA-M 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 229910052692 Dysprosium Inorganic materials 0.000 description 1
- 229910052691 Erbium Inorganic materials 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- 230000005355 Hall effect Effects 0.000 description 1
- 229910052689 Holmium Inorganic materials 0.000 description 1
- CPELXLSAUQHCOX-UHFFFAOYSA-N Hydrogen bromide Chemical compound Br CPELXLSAUQHCOX-UHFFFAOYSA-N 0.000 description 1
- 108010083687 Ion Pumps Proteins 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- 229910052765 Lutetium Inorganic materials 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 238000006124 Pilkington process Methods 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- 229910052777 Praseodymium Inorganic materials 0.000 description 1
- 229910018503 SF6 Inorganic materials 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- 229910003902 SiCl 4 Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- 229910052775 Thulium Inorganic materials 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- 229910000611 Zinc aluminium Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- HXFVOUUOTHJFPX-UHFFFAOYSA-N alumane;zinc Chemical compound [AlH3].[Zn] HXFVOUUOTHJFPX-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- JYMITAMFTJDTAE-UHFFFAOYSA-N aluminum zinc oxygen(2-) Chemical compound [O-2].[Al+3].[Zn+2] JYMITAMFTJDTAE-UHFFFAOYSA-N 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- SWXQKHHHCFXQJF-UHFFFAOYSA-N azane;hydrogen peroxide Chemical compound [NH4+].[O-]O SWXQKHHHCFXQJF-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 150000001721 carbon Chemical group 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000000994 depressogenic effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- KBQHZAAAGSGFKK-UHFFFAOYSA-N dysprosium atom Chemical compound [Dy] KBQHZAAAGSGFKK-UHFFFAOYSA-N 0.000 description 1
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 description 1
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 125000005843 halogen group Chemical group 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- KJZYNXUDTRRSPN-UHFFFAOYSA-N holmium atom Chemical compound [Ho] KJZYNXUDTRRSPN-UHFFFAOYSA-N 0.000 description 1
- QOSATHPSBFQAML-UHFFFAOYSA-N hydrogen peroxide;hydrate Chemical compound O.OO QOSATHPSBFQAML-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 229910052747 lanthanoid Inorganic materials 0.000 description 1
- 150000002602 lanthanoids Chemical class 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 238000001307 laser spectroscopy Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- OHSVLFRHMCKCQY-UHFFFAOYSA-N lutetium atom Chemical compound [Lu] OHSVLFRHMCKCQY-UHFFFAOYSA-N 0.000 description 1
- 230000003211 malignant effect Effects 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 229910001507 metal halide Inorganic materials 0.000 description 1
- 150000005309 metal halides Chemical class 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- QKCGXXHCELUCKW-UHFFFAOYSA-N n-[4-[4-(dinaphthalen-2-ylamino)phenyl]phenyl]-n-naphthalen-2-ylnaphthalen-2-amine Chemical compound C1=CC=CC2=CC(N(C=3C=CC(=CC=3)C=3C=CC(=CC=3)N(C=3C=C4C=CC=CC4=CC=3)C=3C=C4C=CC=CC4=CC=3)C3=CC4=CC=CC=C4C=C3)=CC=C21 QKCGXXHCELUCKW-UHFFFAOYSA-N 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 239000001272 nitrous oxide Substances 0.000 description 1
- 238000010943 off-gassing Methods 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 238000007500 overflow downdraw method Methods 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- PUDIUYLPXJFUGB-UHFFFAOYSA-N praseodymium atom Chemical compound [Pr] PUDIUYLPXJFUGB-UHFFFAOYSA-N 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 239000005049 silicon tetrachloride Substances 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 1
- 229960000909 sulfur hexafluoride Drugs 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical class [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 description 1
- FRNOGLGSGLTDKL-UHFFFAOYSA-N thulium atom Chemical compound [Tm] FRNOGLGSGLTDKL-UHFFFAOYSA-N 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/06—Arrangements for interconnecting storage elements electrically, e.g. by wiring
- G11C5/063—Voltage and signal distribution in integrated semi-conductor memory access lines, e.g. word-line, bit-line, cross-over resistance, propagation delay
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/14—Word line organisation; Word line lay-out
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78645—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
Abstract
【解決手段】複数のメモリセルと、複数のワード線と、複数のビット線とを有し、複数のメモリセルは、スイッチング素子と、第1の電極及び第2の電極を有する容量素子と、をそれぞれ有し、複数のメモリセルの少なくとも1つにおいて、複数のワード線のうち一のワード線に与えられる電位に従って、スイッチング素子が複数のビット線のうち一のビット線と第1の電極の接続を制御し、なおかつ、第2の電極が複数のワード線のうち一のワード線とは異なる一のワード線に接続されている記憶装置。
【選択図】図1
Description
図1に、本発明の一態様に係る記憶装置の、セルアレイ100の構成を一例として回路図で示す。図1に示すセルアレイ100は、マトリクス状に配置された複数のメモリセル101と、複数のワード線WLと、複数のビット線BLとを有する。駆動回路からの信号は、複数のワード線WL、複数のビット線BLを介して各メモリセル101に供給される。
本実施の形態では、図1とは異なる構成を有する、本発明の一態様の係る記憶装置の、セルアレイ200の構成について説明する。
本実施の形態では、セルアレイを構成するトランジスタの作製方法について説明する。ただし、本実施の形態では、酸化物半導体を用いたトランジスタを例に挙げて説明する。
本発明の一態様に係る記憶装置の、駆動回路の具体的な構成の一例について説明する。
本実施の形態では、読み出し回路の具体的な構成の一例について説明する。
酸化物半導体に限らず、実際に測定される絶縁ゲート型トランジスタの移動度は、さまざまな理由によって本来の移動度よりも低くなる。移動度を低下させる要因としては半導体内部の欠陥や半導体と絶縁膜との界面の欠陥があるが、Levinsonモデルを用いると、半導体内部に欠陥がないと仮定した場合の移動度を理論的に導き出せる。そこで、本実施の形態では、半導体内部に欠陥がない理想的な酸化物半導体の移動度を理論的に導き出すとともに、このような酸化物半導体を用いて微細なトランジスタを作製した場合の特性の計算結果を示す。
In、Sn、Znを主成分とする酸化物半導体をチャネル形成領域とするトランジスタは、該酸化物半導体を形成する際に基板を加熱して成膜すること、或いは酸化物半導体膜を形成した後に熱処理を行うことで良好な特性を得ることができる。なお、主成分とは組成比で5atomic%以上含まれる元素をいう。そこで、本実施の形態では、酸化物半導体膜の成膜後に基板を意図的に加熱することで、トランジスタの移動度を向上させた場合について、図23乃至図29を用いて説明する。
試料1および試料2のいずれも、BT試験前後におけるしきい値電圧の変動が小さく、信頼性が高いことがわかる。
101 メモリセル
102 トランジスタ
103 容量素子
104 基板
105 半導体膜
106 導電膜
107 導電膜
108 絶縁膜
109 導電膜
110 絶縁膜
111 導電膜
115 半導体膜
116 導電膜
117 導電膜
118 絶縁膜
119 導電膜
120 絶縁膜
121 導電膜
125 半導体膜
126 導電膜
127 導電膜
128 絶縁膜
129 導電膜
130 絶縁膜
131 導電膜
135 半導体膜
136 導電膜
137 導電膜
138 絶縁膜
139 導電膜
140 絶縁膜
141 導電膜
200 セルアレイ
201 メモリセル
202 トランジスタ
202a トランジスタ
202b トランジスタ
202c トランジスタ
202d トランジスタ
203 容量素子
203a 容量素子
203b 容量素子
203c 容量素子
203d 容量素子
204 基板
205a 半導体膜
205b 半導体膜
205c 半導体膜
205d 半導体膜
206a 導電膜
206b 導電膜
206c 導電膜
206d 導電膜
207a 導電膜
207b 導電膜
207c 導電膜
207d 導電膜
208 絶縁膜
209 導電膜
215a 半導体膜
215b 半導体膜
215c 半導体膜
215d 半導体膜
216a 導電膜
216b 導電膜
216c 導電膜
216d 導電膜
217a 導電膜
217b 導電膜
217c 導電膜
217d 導電膜
218 絶縁膜
219 導電膜
230 絶縁膜
231 導電膜
232 絶縁膜
234 絶縁膜
235 絶縁膜
236 導電膜
240 絶縁膜
241 絶縁膜
242 導電膜
243 絶縁膜
244 絶縁膜
245 絶縁膜
246 導電膜
247 絶縁膜
260 トランジスタ
261 トランジスタ
262 オペアンプ
290 ブロック
291 ブロック
300 記憶装置
301 セルアレイ
302 駆動回路
303 回路
304 ワード線駆動回路
305 ビット線駆動回路
306 制御回路
307 デコーダ
308 レベルシフタ
309 バッファ
310 デコーダ
312 セレクタ
600 基板
602 下地絶縁膜
604 一対の電極
606 酸化物半導体膜
608 ゲート絶縁膜
610 ゲート電極
614 一対の電極
616 層間絶縁膜
618 配線
620 保護膜
700 基板
701 絶縁膜
702 導電膜
703 導電膜
704 ゲート絶縁膜
705 酸化物半導体膜
706 酸化物半導体膜
707 導電膜
708 導電膜
709 導電膜
710 導電膜
711 絶縁膜
712 トランジスタ
713 トランジスタ
714 容量素子
715 容量素子
1100 基板
1102 下地絶縁膜
1104 保護絶縁膜
1106a 高抵抗領域
1106b 低抵抗領域
1106 酸化物半導体膜
1108 ゲート絶縁膜
1110 ゲート電極
1112 側壁絶縁膜
1114 一対の電極
1116 層間絶縁膜
1118 配線
7031 筐体
7032 筐体
7033 表示部
7034 表示部
7035 マイクロホン
7036 スピーカー
7037 操作キー
7038 スタイラス
7041 筐体
7042 表示部
7043 音声入力部
7044 音声出力部
7045 操作キー
7046 受光部
7051 筐体
7052 表示部
7053 操作キー
8101 下地絶縁膜
8102 埋め込み絶縁物
8103a 半導体領域
8103b 半導体領域
8103c 半導体領域
8104 ゲート絶縁膜
8105 ゲート電極
8106a 側壁絶縁物
8106b 側壁絶縁物
8107 絶縁物
8108a ソース電極
8108b ドレイン電極
Claims (11)
- 複数のメモリセルと、複数のワード線と、複数のビット線と、を有し、
前記複数のメモリセルは、スイッチング素子と、第1の電極及び第2の電極を有する容量素子と、をそれぞれ有し、
前記複数のメモリセルの少なくとも1つにおいて、前記複数のワード線のうち一のワード線に与えられる電位に従って、前記スイッチング素子が前記複数のビット線のうち一のビット線と前記第1の電極の接続を制御し、なおかつ、前記第2の電極が前記複数のワード線のうち前記一のワード線とは異なる一のワード線に接続されている記憶装置。 - 複数のメモリセルと、複数のワード線と、複数のビット線と、を有し、
前記複数のメモリセルは、スイッチング素子と、第1の電極及び第2の電極を有する容量素子と、をそれぞれ有し、
前記複数のメモリセルの少なくとも1つにおいて、前記複数のワード線のうち一のワード線に与えられる電位に従って、前記スイッチング素子が前記複数のビット線のうち一のビット線と前記第1の電極の接続を制御し、なおかつ、前記第2の電極が前記複数のワード線のうち前記一のワード線に隣接した一のワード線に接続されている記憶装置。 - 複数の第1メモリセルと、複数の第1ワード線と、複数の第1ビット線と、複数の第2メモリセルと、複数の第2ワード線と、複数の第2ビット線と、容量線と、を有し、
前記複数の第1メモリセル及び前記複数の第2メモリセルは、スイッチング素子と、第1の電極及び第2の電極を有する容量素子と、をそれぞれ有し、
前記複数の第1メモリセルの少なくとも1つにおいて、前記複数の第1ワード線のうち一の第1ワード線に与えられる電位に従って、前記スイッチング素子が前記複数の第1ビット線のうち一の第1ビット線と前記第1の電極の接続を制御し、なおかつ、前記第2の電極が前記容量線に接続されており、
前記複数の第2メモリセルの少なくとも1つにおいて、前記複数の第2ワード線のうち一の第2ワード線に与えられる電位に従って、前記スイッチング素子が前記複数の第2ビット線のうち一の第2ビット線と前記第1の電極の接続を制御し、なおかつ、前記第2の電極が前記複数の第1ワード線のうち前記一の第1ワード線に接続されており、
前記容量線の上方に前記複数の第1ワード線が位置し、前記複数の第1ワード線の上方に前記複数の第2ワード線が位置する記憶装置。 - 請求項1乃至請求項3のいずれか1項において、前記スイッチング素子はトランジスタであり、前記トランジスタが有する半導体膜は酸化物半導体を含んでいる記憶装置。
- 請求項4において、
前記酸化物半導体はIn−Ga−Zn系の酸化物半導体である記憶装置。 - 請求項4または請求項5において、
前記半導体膜の水素濃度は1×1019/cm3以下である記憶装置。 - 複数のメモリセルと、複数のワード線と、複数のビット線と、を有し、
前記複数のメモリセルは、トランジスタと、第1の電極及び第2の電極を有する容量素子と、をそれぞれ有し、
前記複数のメモリセルの少なくとも1つにおいて、前記トランジスタのゲート電極は前記複数のワード線のうち一のワード線に、第1端子は前記複数のビット線のうち一のビット線に、第2端子は前記第1の電極にそれぞれ接続され、なおかつ、前記第2の電極は前記複数のワード線のうち前記一のワード線とは異なる一のワード線に接続されている記憶装置。 - 請求項7において、
前記トランジスタが有する半導体膜は、酸化物半導体を含んでいる記憶装置。 - 請求項8において、
前記酸化物半導体はIn、Ga、及びZnを含む記憶装置。 - 請求項8または請求項9において、
前記半導体膜の水素濃度は1×1019/cm3以下である記憶装置。 - 請求項1乃至請求項10のいずれか1項に記載の記憶装置を有する半導体装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011245230A JP5770068B2 (ja) | 2010-11-12 | 2011-11-09 | 半導体装置 |
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010253476 | 2010-11-12 | ||
JP2010253476 | 2010-11-12 | ||
JP2011108889 | 2011-05-14 | ||
JP2011108889 | 2011-05-14 | ||
JP2011245230A JP5770068B2 (ja) | 2010-11-12 | 2011-11-09 | 半導体装置 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015126706A Division JP6002282B2 (ja) | 2010-11-12 | 2015-06-24 | 半導体装置 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2012256402A true JP2012256402A (ja) | 2012-12-27 |
JP2012256402A5 JP2012256402A5 (ja) | 2014-10-09 |
JP5770068B2 JP5770068B2 (ja) | 2015-08-26 |
Family
ID=46047638
Family Applications (8)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011245230A Active JP5770068B2 (ja) | 2010-11-12 | 2011-11-09 | 半導体装置 |
JP2015126706A Expired - Fee Related JP6002282B2 (ja) | 2010-11-12 | 2015-06-24 | 半導体装置 |
JP2016152484A Active JP6224785B2 (ja) | 2010-11-12 | 2016-08-03 | 半導体装置 |
JP2017195012A Active JP6503433B2 (ja) | 2010-11-12 | 2017-10-05 | 半導体装置 |
JP2019056513A Active JP6690039B2 (ja) | 2010-11-12 | 2019-03-25 | 半導体装置 |
JP2020069701A Active JP7003174B2 (ja) | 2010-11-12 | 2020-04-08 | 半導体装置 |
JP2021214004A Withdrawn JP2022031543A (ja) | 2010-11-12 | 2021-12-28 | 半導体装置 |
JP2023119221A Pending JP2023133409A (ja) | 2010-11-12 | 2023-07-21 | 半導体装置 |
Family Applications After (7)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015126706A Expired - Fee Related JP6002282B2 (ja) | 2010-11-12 | 2015-06-24 | 半導体装置 |
JP2016152484A Active JP6224785B2 (ja) | 2010-11-12 | 2016-08-03 | 半導体装置 |
JP2017195012A Active JP6503433B2 (ja) | 2010-11-12 | 2017-10-05 | 半導体装置 |
JP2019056513A Active JP6690039B2 (ja) | 2010-11-12 | 2019-03-25 | 半導体装置 |
JP2020069701A Active JP7003174B2 (ja) | 2010-11-12 | 2020-04-08 | 半導体装置 |
JP2021214004A Withdrawn JP2022031543A (ja) | 2010-11-12 | 2021-12-28 | 半導体装置 |
JP2023119221A Pending JP2023133409A (ja) | 2010-11-12 | 2023-07-21 | 半導体装置 |
Country Status (4)
Country | Link |
---|---|
US (2) | US8797785B2 (ja) |
JP (8) | JP5770068B2 (ja) |
KR (5) | KR101912948B1 (ja) |
TW (1) | TWI541981B (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2018164088A (ja) * | 2013-02-20 | 2018-10-18 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP2020025103A (ja) * | 2010-02-05 | 2020-02-13 | 株式会社半導体エネルギー研究所 | 半導体装置 |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI614747B (zh) | 2011-01-26 | 2018-02-11 | 半導體能源研究所股份有限公司 | 記憶體裝置及半導體裝置 |
JP6082189B2 (ja) | 2011-05-20 | 2017-02-15 | 株式会社半導体エネルギー研究所 | 記憶装置及び信号処理回路 |
TWI616873B (zh) | 2011-05-20 | 2018-03-01 | 半導體能源研究所股份有限公司 | 儲存裝置及信號處理電路 |
JP5886496B2 (ja) | 2011-05-20 | 2016-03-16 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US9076505B2 (en) * | 2011-12-09 | 2015-07-07 | Semiconductor Energy Laboratory Co., Ltd. | Memory device |
US9320111B2 (en) * | 2012-05-31 | 2016-04-19 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device |
TWI638519B (zh) * | 2013-05-17 | 2018-10-11 | 半導體能源研究所股份有限公司 | 可程式邏輯裝置及半導體裝置 |
US9607991B2 (en) | 2013-09-05 | 2017-03-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
KR102309629B1 (ko) * | 2013-12-27 | 2021-10-07 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광 장치 |
TWI695375B (zh) | 2014-04-10 | 2020-06-01 | 日商半導體能源研究所股份有限公司 | 記憶體裝置及半導體裝置 |
WO2015170220A1 (en) | 2014-05-09 | 2015-11-12 | Semiconductor Energy Laboratory Co., Ltd. | Memory device and electronic device |
US9471737B1 (en) * | 2014-12-05 | 2016-10-18 | Altera Corporation | Semiconductor device with dummy cells of different data types |
JP6773453B2 (ja) * | 2015-05-26 | 2020-10-21 | 株式会社半導体エネルギー研究所 | 記憶装置及び電子機器 |
JP6901831B2 (ja) | 2015-05-26 | 2021-07-14 | 株式会社半導体エネルギー研究所 | メモリシステム、及び情報処理システム |
WO2017068478A1 (en) | 2015-10-22 | 2017-04-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device or memory device including the semiconductor device |
US9741400B2 (en) | 2015-11-05 | 2017-08-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, memory device, electronic device, and method for operating the semiconductor device |
US10032492B2 (en) | 2016-03-18 | 2018-07-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, driver IC, computer and electronic device |
US10347322B1 (en) * | 2018-02-20 | 2019-07-09 | Micron Technology, Inc. | Apparatuses having memory strings compared to one another through a sense amplifier |
TW202105678A (zh) * | 2019-01-25 | 2021-02-01 | 日商半導體能源研究所股份有限公司 | 半導體裝置及包括該半導體裝置的電子裝置 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001110180A (ja) * | 1999-09-07 | 2001-04-20 | Hyundai Electronics Ind Co Ltd | 不揮発性強誘電体メモリのセルブロック構造 |
JP2010219506A (ja) * | 2009-02-20 | 2010-09-30 | Semiconductor Energy Lab Co Ltd | 薄膜トランジスタ及びその作製方法、並びに半導体装置 |
JP2012256815A (ja) * | 2010-08-04 | 2012-12-27 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
Family Cites Families (127)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3838404A (en) | 1973-05-17 | 1974-09-24 | Teletype Corp | Random access memory system and cell |
JPS5045527A (ja) | 1973-07-30 | 1975-04-23 | ||
JPS5121450A (ja) | 1974-08-15 | 1976-02-20 | Nippon Electric Co | |
JPS60198861A (ja) | 1984-03-23 | 1985-10-08 | Fujitsu Ltd | 薄膜トランジスタ |
US4888631A (en) | 1986-01-17 | 1989-12-19 | Sharp Kabushiki Kaisha | Semiconductor dynamic memory device |
JPS62165971A (ja) | 1986-01-17 | 1987-07-22 | Sharp Corp | ダイナミツク型半導体記憶素子 |
JPS62274773A (ja) * | 1986-05-23 | 1987-11-28 | Hitachi Ltd | 半導体記憶装置 |
JPH0244256B2 (ja) | 1987-01-28 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn2o5deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
JPH0244258B2 (ja) | 1987-02-24 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn3o6deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
JPS63210023A (ja) | 1987-02-24 | 1988-08-31 | Natl Inst For Res In Inorg Mater | InGaZn↓4O↓7で示される六方晶系の層状構造を有する化合物およびその製造法 |
JPH0244260B2 (ja) | 1987-02-24 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn5o8deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
JPH0244262B2 (ja) | 1987-02-27 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn6o9deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
JPH0244263B2 (ja) | 1987-04-22 | 1990-10-03 | Kagaku Gijutsucho Mukizaishitsu Kenkyushocho | Ingazn7o10deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho |
JPH05251705A (ja) | 1992-03-04 | 1993-09-28 | Fuji Xerox Co Ltd | 薄膜トランジスタ |
JPH07312392A (ja) | 1994-05-18 | 1995-11-28 | Mitsubishi Electric Corp | 半導体記憶装置及びその製造方法 |
JP3479375B2 (ja) | 1995-03-27 | 2003-12-15 | 科学技術振興事業団 | 亜酸化銅等の金属酸化物半導体による薄膜トランジスタとpn接合を形成した金属酸化物半導体装置およびそれらの製造方法 |
DE69635107D1 (de) | 1995-08-03 | 2005-09-29 | Koninkl Philips Electronics Nv | Halbleiteranordnung mit einem transparenten schaltungselement |
JP3625598B2 (ja) | 1995-12-30 | 2005-03-02 | 三星電子株式会社 | 液晶表示装置の製造方法 |
JP4027449B2 (ja) * | 1996-02-23 | 2007-12-26 | 株式会社半導体エネルギー研究所 | 半導体薄膜及び半導体装置の作製方法 |
JP4085459B2 (ja) * | 1998-03-02 | 2008-05-14 | セイコーエプソン株式会社 | 3次元デバイスの製造方法 |
US6028784A (en) | 1998-05-01 | 2000-02-22 | Texas Instruments Incorporated | Ferroelectric memory device having compact memory cell array |
JP4170454B2 (ja) | 1998-07-24 | 2008-10-22 | Hoya株式会社 | 透明導電性酸化物薄膜を有する物品及びその製造方法 |
JP2000150861A (ja) | 1998-11-16 | 2000-05-30 | Tdk Corp | 酸化物薄膜 |
JP3276930B2 (ja) | 1998-11-17 | 2002-04-22 | 科学技術振興事業団 | トランジスタ及び半導体装置 |
KR100323711B1 (ko) * | 1999-06-10 | 2002-02-07 | 구자홍 | 강유전체 메모리 제조방법 |
TW460731B (en) | 1999-09-03 | 2001-10-21 | Ind Tech Res Inst | Electrode structure and production method of wide viewing angle LCD |
JP4089858B2 (ja) | 2000-09-01 | 2008-05-28 | 国立大学法人東北大学 | 半導体デバイス |
KR20020038482A (ko) | 2000-11-15 | 2002-05-23 | 모리시타 요이찌 | 박막 트랜지스터 어레이, 그 제조방법 및 그것을 이용한표시패널 |
WO2002047062A1 (fr) * | 2000-12-08 | 2002-06-13 | Matsushita Electric Industrial Co., Ltd. | Dispositif d'affichage electroluminescent |
JP3997731B2 (ja) | 2001-03-19 | 2007-10-24 | 富士ゼロックス株式会社 | 基材上に結晶性半導体薄膜を形成する方法 |
JP2002289859A (ja) | 2001-03-23 | 2002-10-04 | Minolta Co Ltd | 薄膜トランジスタ |
JP3925839B2 (ja) | 2001-09-10 | 2007-06-06 | シャープ株式会社 | 半導体記憶装置およびその試験方法 |
JP4090716B2 (ja) | 2001-09-10 | 2008-05-28 | 雅司 川崎 | 薄膜トランジスタおよびマトリクス表示装置 |
WO2003040441A1 (en) | 2001-11-05 | 2003-05-15 | Japan Science And Technology Agency | Natural superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film |
JP4164562B2 (ja) | 2002-09-11 | 2008-10-15 | 独立行政法人科学技術振興機構 | ホモロガス薄膜を活性層として用いる透明薄膜電界効果型トランジスタ |
JP2002319682A (ja) * | 2002-01-04 | 2002-10-31 | Japan Science & Technology Corp | トランジスタ及び半導体装置 |
JP4083486B2 (ja) | 2002-02-21 | 2008-04-30 | 独立行政法人科学技術振興機構 | LnCuO(S,Se,Te)単結晶薄膜の製造方法 |
CN1445821A (zh) | 2002-03-15 | 2003-10-01 | 三洋电机株式会社 | ZnO膜和ZnO半导体层的形成方法、半导体元件及其制造方法 |
JP3933591B2 (ja) | 2002-03-26 | 2007-06-20 | 淳二 城戸 | 有機エレクトロルミネッセント素子 |
WO2003098636A2 (en) | 2002-05-16 | 2003-11-27 | Micron Technology, Inc. | STACKED 1T-nMEMORY CELL STRUCTURE |
US7339187B2 (en) | 2002-05-21 | 2008-03-04 | State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University | Transistor structures |
US6787835B2 (en) | 2002-06-11 | 2004-09-07 | Hitachi, Ltd. | Semiconductor memories |
JP2004022625A (ja) | 2002-06-13 | 2004-01-22 | Murata Mfg Co Ltd | 半導体デバイス及び該半導体デバイスの製造方法 |
US7105868B2 (en) | 2002-06-24 | 2006-09-12 | Cermet, Inc. | High-electron mobility transistor with zinc oxide |
US7067843B2 (en) | 2002-10-11 | 2006-06-27 | E. I. Du Pont De Nemours And Company | Transparent oxide semiconductor thin film transistors |
JP4166105B2 (ja) | 2003-03-06 | 2008-10-15 | シャープ株式会社 | 半導体装置およびその製造方法 |
JP2004273732A (ja) | 2003-03-07 | 2004-09-30 | Sharp Corp | アクティブマトリクス基板およびその製造方法 |
JP4108633B2 (ja) | 2003-06-20 | 2008-06-25 | シャープ株式会社 | 薄膜トランジスタおよびその製造方法ならびに電子デバイス |
US7262463B2 (en) | 2003-07-25 | 2007-08-28 | Hewlett-Packard Development Company, L.P. | Transistor including a deposited channel region having a doped portion |
CN102867855B (zh) | 2004-03-12 | 2015-07-15 | 独立行政法人科学技术振兴机构 | 薄膜晶体管及其制造方法 |
US7297977B2 (en) | 2004-03-12 | 2007-11-20 | Hewlett-Packard Development Company, L.P. | Semiconductor device |
US7282782B2 (en) | 2004-03-12 | 2007-10-16 | Hewlett-Packard Development Company, L.P. | Combined binary oxide semiconductor device |
US7145174B2 (en) | 2004-03-12 | 2006-12-05 | Hewlett-Packard Development Company, Lp. | Semiconductor device |
US7211825B2 (en) | 2004-06-14 | 2007-05-01 | Yi-Chi Shih | Indium oxide-based thin film transistors and circuits |
JP2006100760A (ja) | 2004-09-02 | 2006-04-13 | Casio Comput Co Ltd | 薄膜トランジスタおよびその製造方法 |
US7285501B2 (en) | 2004-09-17 | 2007-10-23 | Hewlett-Packard Development Company, L.P. | Method of forming a solution processed device |
JP4638193B2 (ja) * | 2004-09-24 | 2011-02-23 | パトレネラ キャピタル リミテッド, エルエルシー | メモリ |
US7298084B2 (en) | 2004-11-02 | 2007-11-20 | 3M Innovative Properties Company | Methods and displays utilizing integrated zinc oxide row and column drivers in conjunction with organic light emitting diodes |
AU2005302963B2 (en) | 2004-11-10 | 2009-07-02 | Cannon Kabushiki Kaisha | Light-emitting device |
US7453065B2 (en) | 2004-11-10 | 2008-11-18 | Canon Kabushiki Kaisha | Sensor and image pickup device |
US7863611B2 (en) | 2004-11-10 | 2011-01-04 | Canon Kabushiki Kaisha | Integrated circuits utilizing amorphous oxides |
CA2585071A1 (en) | 2004-11-10 | 2006-05-18 | Canon Kabushiki Kaisha | Field effect transistor employing an amorphous oxide |
US7791072B2 (en) | 2004-11-10 | 2010-09-07 | Canon Kabushiki Kaisha | Display |
US7829444B2 (en) | 2004-11-10 | 2010-11-09 | Canon Kabushiki Kaisha | Field effect transistor manufacturing method |
RU2369940C2 (ru) | 2004-11-10 | 2009-10-10 | Кэнон Кабусики Кайся | Аморфный оксид и полевой транзистор с его использованием |
JP2006165535A (ja) * | 2004-11-11 | 2006-06-22 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
US7579224B2 (en) | 2005-01-21 | 2009-08-25 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a thin film semiconductor device |
TWI481024B (zh) | 2005-01-28 | 2015-04-11 | Semiconductor Energy Lab | 半導體裝置,電子裝置,和半導體裝置的製造方法 |
TWI562380B (en) | 2005-01-28 | 2016-12-11 | Semiconductor Energy Lab Co Ltd | Semiconductor device, electronic device, and method of manufacturing semiconductor device |
US7858451B2 (en) | 2005-02-03 | 2010-12-28 | Semiconductor Energy Laboratory Co., Ltd. | Electronic device, semiconductor device and manufacturing method thereof |
US7948171B2 (en) | 2005-02-18 | 2011-05-24 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
US20060197092A1 (en) | 2005-03-03 | 2006-09-07 | Randy Hoffman | System and method for forming conductive material on a substrate |
US8681077B2 (en) | 2005-03-18 | 2014-03-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, and display device, driving method and electronic apparatus thereof |
US7544967B2 (en) | 2005-03-28 | 2009-06-09 | Massachusetts Institute Of Technology | Low voltage flexible organic/transparent transistor for selective gas sensing, photodetecting and CMOS device applications |
US7645478B2 (en) | 2005-03-31 | 2010-01-12 | 3M Innovative Properties Company | Methods of making displays |
US8300031B2 (en) | 2005-04-20 | 2012-10-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device comprising transistor having gate and drain connected through a current-voltage conversion element |
JP2006344849A (ja) | 2005-06-10 | 2006-12-21 | Casio Comput Co Ltd | 薄膜トランジスタ |
US7691666B2 (en) | 2005-06-16 | 2010-04-06 | Eastman Kodak Company | Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby |
US7402506B2 (en) | 2005-06-16 | 2008-07-22 | Eastman Kodak Company | Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby |
US7507618B2 (en) | 2005-06-27 | 2009-03-24 | 3M Innovative Properties Company | Method for making electronic devices using metal oxide nanoparticles |
KR100711890B1 (ko) | 2005-07-28 | 2007-04-25 | 삼성에스디아이 주식회사 | 유기 발광표시장치 및 그의 제조방법 |
JP2007059128A (ja) | 2005-08-23 | 2007-03-08 | Canon Inc | 有機el表示装置およびその製造方法 |
JP4280736B2 (ja) | 2005-09-06 | 2009-06-17 | キヤノン株式会社 | 半導体素子 |
JP2007073705A (ja) | 2005-09-06 | 2007-03-22 | Canon Inc | 酸化物半導体チャネル薄膜トランジスタおよびその製造方法 |
JP5116225B2 (ja) | 2005-09-06 | 2013-01-09 | キヤノン株式会社 | 酸化物半導体デバイスの製造方法 |
JP4850457B2 (ja) | 2005-09-06 | 2012-01-11 | キヤノン株式会社 | 薄膜トランジスタ及び薄膜ダイオード |
EP1995787A3 (en) | 2005-09-29 | 2012-01-18 | Semiconductor Energy Laboratory Co, Ltd. | Semiconductor device having oxide semiconductor layer and manufacturing method therof |
JP5037808B2 (ja) | 2005-10-20 | 2012-10-03 | キヤノン株式会社 | アモルファス酸化物を用いた電界効果型トランジスタ、及び該トランジスタを用いた表示装置 |
CN101577293B (zh) | 2005-11-15 | 2012-09-19 | 株式会社半导体能源研究所 | 半导体器件及其制造方法 |
TWI292281B (en) | 2005-12-29 | 2008-01-01 | Ind Tech Res Inst | Pixel structure of active organic light emitting diode and method of fabricating the same |
US7867636B2 (en) | 2006-01-11 | 2011-01-11 | Murata Manufacturing Co., Ltd. | Transparent conductive film and method for manufacturing the same |
JP4977478B2 (ja) | 2006-01-21 | 2012-07-18 | 三星電子株式会社 | ZnOフィルム及びこれを用いたTFTの製造方法 |
US7576394B2 (en) | 2006-02-02 | 2009-08-18 | Kochi Industrial Promotion Center | Thin film transistor including low resistance conductive thin films and manufacturing method thereof |
US7977169B2 (en) | 2006-02-15 | 2011-07-12 | Kochi Industrial Promotion Center | Semiconductor device including active layer made of zinc oxide with controlled orientations and manufacturing method thereof |
JP5110803B2 (ja) * | 2006-03-17 | 2012-12-26 | キヤノン株式会社 | 酸化物膜をチャネルに用いた電界効果型トランジスタ及びその製造方法 |
KR20070101595A (ko) | 2006-04-11 | 2007-10-17 | 삼성전자주식회사 | ZnO TFT |
US20070252928A1 (en) | 2006-04-28 | 2007-11-01 | Toppan Printing Co., Ltd. | Structure, transmission type liquid crystal display, reflection type display and manufacturing method thereof |
JP5028033B2 (ja) | 2006-06-13 | 2012-09-19 | キヤノン株式会社 | 酸化物半導体膜のドライエッチング方法 |
JP4999400B2 (ja) | 2006-08-09 | 2012-08-15 | キヤノン株式会社 | 酸化物半導体膜のドライエッチング方法 |
JP4609797B2 (ja) | 2006-08-09 | 2011-01-12 | Nec液晶テクノロジー株式会社 | 薄膜デバイス及びその製造方法 |
JP4332545B2 (ja) | 2006-09-15 | 2009-09-16 | キヤノン株式会社 | 電界効果型トランジスタ及びその製造方法 |
JP5164357B2 (ja) | 2006-09-27 | 2013-03-21 | キヤノン株式会社 | 半導体装置及び半導体装置の製造方法 |
JP4274219B2 (ja) | 2006-09-27 | 2009-06-03 | セイコーエプソン株式会社 | 電子デバイス、有機エレクトロルミネッセンス装置、有機薄膜半導体装置 |
US7622371B2 (en) | 2006-10-10 | 2009-11-24 | Hewlett-Packard Development Company, L.P. | Fused nanocrystal thin film semiconductor and method |
US7772021B2 (en) | 2006-11-29 | 2010-08-10 | Samsung Electronics Co., Ltd. | Flat panel displays comprising a thin-film transistor having a semiconductive oxide in its channel and methods of fabricating the same for use in flat panel displays |
JP2008140684A (ja) | 2006-12-04 | 2008-06-19 | Toppan Printing Co Ltd | カラーelディスプレイおよびその製造方法 |
KR101303578B1 (ko) | 2007-01-05 | 2013-09-09 | 삼성전자주식회사 | 박막 식각 방법 |
US8207063B2 (en) | 2007-01-26 | 2012-06-26 | Eastman Kodak Company | Process for atomic layer deposition |
KR100851215B1 (ko) | 2007-03-14 | 2008-08-07 | 삼성에스디아이 주식회사 | 박막 트랜지스터 및 이를 이용한 유기 전계 발광표시장치 |
US7795613B2 (en) | 2007-04-17 | 2010-09-14 | Toppan Printing Co., Ltd. | Structure with transistor |
KR101325053B1 (ko) | 2007-04-18 | 2013-11-05 | 삼성디스플레이 주식회사 | 박막 트랜지스터 기판 및 이의 제조 방법 |
KR20080094300A (ko) | 2007-04-19 | 2008-10-23 | 삼성전자주식회사 | 박막 트랜지스터 및 그 제조 방법과 박막 트랜지스터를포함하는 평판 디스플레이 |
KR101334181B1 (ko) | 2007-04-20 | 2013-11-28 | 삼성전자주식회사 | 선택적으로 결정화된 채널층을 갖는 박막 트랜지스터 및 그제조 방법 |
CN101663762B (zh) | 2007-04-25 | 2011-09-21 | 佳能株式会社 | 氧氮化物半导体 |
KR101345376B1 (ko) | 2007-05-29 | 2013-12-24 | 삼성전자주식회사 | ZnO 계 박막 트랜지스터 및 그 제조방법 |
JP5430846B2 (ja) | 2007-12-03 | 2014-03-05 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US8202365B2 (en) | 2007-12-17 | 2012-06-19 | Fujifilm Corporation | Process for producing oriented inorganic crystalline film, and semiconductor device using the oriented inorganic crystalline film |
JP4623179B2 (ja) | 2008-09-18 | 2011-02-02 | ソニー株式会社 | 薄膜トランジスタおよびその製造方法 |
KR102426826B1 (ko) * | 2008-09-19 | 2022-08-01 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
KR101623958B1 (ko) * | 2008-10-01 | 2016-05-25 | 삼성전자주식회사 | 인버터 및 그의 동작방법과 인버터를 포함하는 논리회로 |
JP5451280B2 (ja) | 2008-10-09 | 2014-03-26 | キヤノン株式会社 | ウルツ鉱型結晶成長用基板およびその製造方法ならびに半導体装置 |
JP2010153802A (ja) | 2008-11-20 | 2010-07-08 | Semiconductor Energy Lab Co Ltd | 半導体装置及び半導体装置の作製方法 |
KR101472771B1 (ko) * | 2008-12-01 | 2014-12-15 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제작 방법 |
JP5781720B2 (ja) * | 2008-12-15 | 2015-09-24 | ルネサスエレクトロニクス株式会社 | 半導体装置及び半導体装置の製造方法 |
CN103456794B (zh) * | 2008-12-19 | 2016-08-10 | 株式会社半导体能源研究所 | 晶体管的制造方法 |
US20100224878A1 (en) * | 2009-03-05 | 2010-09-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
KR101932909B1 (ko) * | 2010-03-04 | 2018-12-27 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 메모리 장치 및 반도체 장치 |
-
2011
- 2011-11-09 TW TW100140923A patent/TWI541981B/zh not_active IP Right Cessation
- 2011-11-09 JP JP2011245230A patent/JP5770068B2/ja active Active
- 2011-11-10 US US13/293,173 patent/US8797785B2/en active Active
- 2011-11-11 KR KR1020110117589A patent/KR101912948B1/ko active IP Right Grant
-
2014
- 2014-07-28 US US14/341,922 patent/US9460772B2/en active Active
-
2015
- 2015-06-24 JP JP2015126706A patent/JP6002282B2/ja not_active Expired - Fee Related
-
2016
- 2016-08-03 JP JP2016152484A patent/JP6224785B2/ja active Active
-
2017
- 2017-10-05 JP JP2017195012A patent/JP6503433B2/ja active Active
-
2018
- 2018-10-22 KR KR1020180125820A patent/KR102009317B1/ko active IP Right Grant
-
2019
- 2019-03-25 JP JP2019056513A patent/JP6690039B2/ja active Active
- 2019-08-05 KR KR1020190094808A patent/KR102126409B1/ko active IP Right Grant
-
2020
- 2020-04-08 JP JP2020069701A patent/JP7003174B2/ja active Active
- 2020-06-18 KR KR1020200074229A patent/KR102171172B1/ko active IP Right Grant
- 2020-10-22 KR KR1020200137485A patent/KR102246116B1/ko active IP Right Grant
-
2021
- 2021-12-28 JP JP2021214004A patent/JP2022031543A/ja not_active Withdrawn
-
2023
- 2023-07-21 JP JP2023119221A patent/JP2023133409A/ja active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001110180A (ja) * | 1999-09-07 | 2001-04-20 | Hyundai Electronics Ind Co Ltd | 不揮発性強誘電体メモリのセルブロック構造 |
JP2010219506A (ja) * | 2009-02-20 | 2010-09-30 | Semiconductor Energy Lab Co Ltd | 薄膜トランジスタ及びその作製方法、並びに半導体装置 |
JP2012256815A (ja) * | 2010-08-04 | 2012-12-27 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2020025103A (ja) * | 2010-02-05 | 2020-02-13 | 株式会社半導体エネルギー研究所 | 半導体装置 |
JP2018164088A (ja) * | 2013-02-20 | 2018-10-18 | 株式会社半導体エネルギー研究所 | 半導体装置 |
Also Published As
Publication number | Publication date |
---|---|
TW201232765A (en) | 2012-08-01 |
JP2015201251A (ja) | 2015-11-12 |
JP5770068B2 (ja) | 2015-08-26 |
TWI541981B (zh) | 2016-07-11 |
KR102246116B1 (ko) | 2021-04-28 |
JP7003174B2 (ja) | 2022-02-04 |
KR101912948B1 (ko) | 2018-10-29 |
JP2019135773A (ja) | 2019-08-15 |
JP6690039B2 (ja) | 2020-04-28 |
KR102126409B1 (ko) | 2020-06-24 |
US20120120715A1 (en) | 2012-05-17 |
JP2018029198A (ja) | 2018-02-22 |
KR20200123070A (ko) | 2020-10-28 |
JP6224785B2 (ja) | 2017-11-01 |
US20140334218A1 (en) | 2014-11-13 |
US9460772B2 (en) | 2016-10-04 |
KR20200075804A (ko) | 2020-06-26 |
KR20180119149A (ko) | 2018-11-01 |
KR20120051593A (ko) | 2012-05-22 |
JP2020129669A (ja) | 2020-08-27 |
JP6002282B2 (ja) | 2016-10-05 |
KR20190095221A (ko) | 2019-08-14 |
JP2022031543A (ja) | 2022-02-18 |
JP6503433B2 (ja) | 2019-04-17 |
US8797785B2 (en) | 2014-08-05 |
JP2016192578A (ja) | 2016-11-10 |
JP2023133409A (ja) | 2023-09-22 |
KR102009317B1 (ko) | 2019-08-09 |
KR102171172B1 (ko) | 2020-10-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6224785B2 (ja) | 半導体装置 | |
JP6262812B2 (ja) | 半導体装置 | |
JP6661697B2 (ja) | 半導体装置 | |
US9525051B2 (en) | Semiconductor device and driving method thereof | |
JP5839474B2 (ja) | 信号処理回路 | |
US8582348B2 (en) | Semiconductor device and method for driving semiconductor device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140822 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20140822 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20150518 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20150609 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20150624 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5770068 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |