JP2012227543A - 発光装置 - Google Patents
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- JP2012227543A JP2012227543A JP2012152205A JP2012152205A JP2012227543A JP 2012227543 A JP2012227543 A JP 2012227543A JP 2012152205 A JP2012152205 A JP 2012152205A JP 2012152205 A JP2012152205 A JP 2012152205A JP 2012227543 A JP2012227543 A JP 2012227543A
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- H05B45/00—Circuit arrangements for operating light-emitting diodes [LED]
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- H05B45/42—Antiparallel configurations
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- H05B45/40—Details of LED load circuits
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Abstract
【解決手段】外部電源と、前記外部電源を整流し整流電圧を出力する整流部と、直列接続された発光セルをそれぞれ有する第1発光セルブロック及び第2発光セルブロックを有し、同一波長帯域の光を発光する発光部と、前記整流部の一端と前記発光部の一端に接続されたスイッチ部と、前記第1発光セルブロック及び第2発光セルブロックは、交互に異なる電圧により発光することを特徴とする発光装置を提供する。
【選択図】図5
Description
本発明の他の目的は、従来技術に比べ、低電流動作が可能であり、発光効率を改善することができる発光素子を提供することにある。
前記発光セルは、ターンオンされた順序の逆順でターンオフされてもよく、これとは異なり、ターンオンされた順にターンオフされてもよい。
前記発光セルのそれぞれは、n型半導体層、p型半導体層、および前記n型およびp型半導体層間に介在された活性層を含んでもよい。また、前記半導体層は、窒化ガリウム(GaN)系半導体物質で形成されてもよい。
本態様による交流用発光素子は、基板を含む。複数のアレイが、前記基板上に位置する。前記複数のアレイは、それぞれ異なる個数で直列連結された発光セルを有し、互いに並列連結される。これに加えて、ブリッジ整流器が前記複数のアレイに連結される。前記ブリッジ整流器の二つのノードが、それぞれ前記アレイの両端部に連結される。これにより、前記ブリッジ整流器により整流された電流により、前記アレイが駆動される交流用発光素子を提供することができ、発光セルの個数差により、順次にターンオンおよびその逆順でターンオフを繰り返す発光素子を提供することができる。
前記遅延蛍光体は、前記発光ダイオードチップと前記透明部材との間、または、前記透明部材内に分散されて位置してもよい。
前記遅延蛍光体は、赤色、緑色、または青色を放出する蛍光体であってもよく、これらの蛍光体の組合せであってもよい。
図5を参照すると、基板20上に互いに離隔した発光セル30が位置する。前記発光セル30のそれぞれは、第1の導電型半導体層25と、前記第1の導電型半導体層25の一部の領域上に位置する第2の導電型半導体層29と、前記第1の導電型半導体層と第2の導電型半導体層との間に介在された活性層27とを有する。ここで、第1の導電型半導体層25および第2の導電型半導体層29は、それぞれn型およびp型、またはp型およびn型である。
前記第2の導電型半導体層29上に電極31が形成されてもよい。前記電極31は、光が透過可能な透明電極であってもよい。
図6を参照すると、それぞれの電極31上に反射金属層51が形成される。反射金属層51は、単一膜または多層膜に形成され得る。例えば、前記反射金属層は、銀(Ag)で形成されてもよく、銀(Ag)の拡散を防止するための障壁金属層が前記反射金属層の上下に形成されてもよい。前記反射金属層は、活性層27で発生された光を基板20側に反射させる。したがって、前記基板20は、透光性基板であることが好ましい。電極パッド33bは、前記反射金属層51上に形成されてもよいが、省略されてもよい。一方、前記反射金属層51を形成する代わりに、前記電極31を反射金属層に形成してもよい。
本実施例によると、サブマウントに熱接触する金属バンプ53を有するフリップチップ型発光ダイオードを提供することができる。このようなフリップチップ型発光ダイオードは、熱放出効率に優れ、高い光出力を提供することができる。
前記各スイッチングブロックGnは、前記ソース端子Sの電圧Vacが、所定電圧×nと所定電圧×(n+1)の範囲内にあるとき、各ノードLnと前記グランド端子Gを短絡させる。ここで、nは、前記スイッチングブロックの序数を示す。この場合、前記スイッチングブロックG1〜Gn−1は、電流をグランド端子Gに迂回させる。一方、前記ソース端子Sの電圧Vacが前記所定電圧×(n+1)以上である場合、前記各スイッチングブロックGnは、ノードLnと前記グランド端子Gを開放させる。この場合、前記スイッチングブロックG1〜Gn−1を通じて迂回する電流は遮断される。また、前記ソース端子Sの電圧Vacが前記所定電圧×nよりも小さい場合、前記スイッチングブロックG1〜Gn−1は、前記ノードLnとグランド端子Gを開放させる。
ソース端子Sに交流電圧電源が連結され、前記ソース端子Sの電圧が順方向電圧Vfよりも大きくなると、スイッチングブロックG1は、ノードL1とグランド端子Gを短絡させる。これにより、発光セルC1およびスイッチングブロックG1を通じて基準電流が流れ始め、発光セルC1が動作して光を放出する。交流電圧Vacがさらに増加すると、発光セルC1に基準電流以上の電流が流れる。
図10を参照すると、交流電源1000の電圧レベルに応じて、スイッチングブロック300により、交流電源1000と第1乃至第8のアレイ101乃至108との間の電流経路が変化する。すなわち、所定の電圧レベルにおいて、第1乃至第8のアレイ101乃至108のいずれか一つのアレイが発光する。したがって、本実施例による発光素子は、交流電源1000の大部分の電圧レベルにおいて光を放出するので、電力損失および明滅現象が緩和される。
図12に示すように、ブリッジ整流器の内部に発光ダイオード200が配置されてもよい。これは、複数の発光セルが直列接続されたアレイを含む発光ダイオードの製造時、発光ダイオードチップの周縁に形成された余分の発光セルを用いてブリッジ整流器400を作製したことを示す。
交流電圧が印加される場合、ブリッジ整流器400による整流作用を通じて、図13(a)のように逆方向の電圧が反転された形態の電源が生成する。これにより、スイッチングブロック300には、順方向の電圧のみが印加される。したがって、発光ダイオード200は、順方向の電圧により発光するように、アレイ101、102、103が互いに並列連結される。
本実施例による交流用発光素子は、電力消耗無しに、殆ど全ての交流電源の電圧レベルで発光し、また、光を放出する時間が増加し、明滅現象を緩和させる。
図14を参照すると、前記発光素子は、発光ダイオード200を有し、これに加えて、第1のレジスタR1〜Rnおよび第2のレジスタR’1〜R’nを有する。
前記発光ダイオード200は、単一基板上にそれぞれ直列連結された発光セル(図5の30)を有する複数の第1のアレイA1〜Anおよび複数の第2のアレイRA1〜RAnを有する。前記第1のアレイA1〜Anは、互いに並列で連結され、前記第2のアレイRA1〜RAnは、前記第1のアレイに逆並列で連結される。
図15を参照すると、前記発光素子は、発光ダイオード200を有し、これに加えて、共通レジスタRtを有してもよい。前記発光ダイオード200は、図14を参照して説明した発光ダイオード200と略同一の構成要素を有する。
図16を参照すると、前記発光素子は、発光ダイオード500およびブリッジ整流器350を有し、レジスタR1〜Rnを含んでもよい。
また、前記アレイA1〜Anは、発光セルの個数が多いアレイであるぼと、さらに大きい発光セル30を有してもよい。
前記レジスタR1〜Rnは、異なる抵抗値を有してもよい。このとき、前記抵抗値は、抵抗値が大きい抵抗体が発光セル30の個数が少ないアレイに連結される方式で、前記アレイにそれぞれ直列連結されることが好ましい。すなわち、発光セル30の個数が少ないアレイA1に抵抗値が大きいレジスタR1が直列連結され、発光セル30の個数が多いアレイAnに抵抗値が小さいレジスタRnが直列連結される。
前記ブリッジ整流器350の二つの他のノードに交流電源1000の両端子が連結される。ここで、前記交流電源1000は、一般家庭用交流電圧電源であってもよく、以下、前記交流用発光素子の動作について説明する。
前記交流電圧が再びゼロになった状態で、半サイクルが終了する。その後の半サイクルの間も、前記ブリッジ整流器350により、前記アレイA1〜Anが同様に動作する。
その後、前記一領域の半導体層をエッチングして発光セルを形成し、前記発光セルを電気的に連結することにより、粗表面の第2の導電型半導体層29aを有する発光セルのアレイが形成される。
前記粗表面は、図6の基板の下部面に形成してもよい。また、図6において、基板20を分離し、第1の導電型半導体層25の下部面に形成してもよい。
図19を参照すると、前記発光素子1は、発光ダイオードチップ3を含む。前記発光ダイオードチップ3は、直列に連結された複数の発光セルを有する。前記発光セルは、紫外線または青色光を放出するAlxInyGazN系の化合物半導体であってもよい。前記発光ダイオードチップ3および前記発光セルの構造は、図5または図6を参照して説明したものと同一である。前記発光セルは、直列に連結されたアレイを構成する。前記発光ダイオードチップ3は、逆並列連結された二つのアレイを含み、交流電源により駆動され、または、ブリッジ整流器を含み、交流電源により駆動され得る。
25 第1の導電型半導体層
27 活性層
29 第2の導電型半導体層
30 発光セル
31 電極
33a、33b 電極パッド
41 配線
Claims (8)
- 外部電源と、
前記外部電源を整流し整流電圧を出力する整流部と、
直列接続された発光セルをそれぞれ有する第1発光セルブロック及び第2発光セルブロックを有し、同一波長帯域の光を発光する発光部と、
前記整流部の一端と前記発光部の一端に接続されたスイッチ部と、
前記第1発光セルブロック及び第2発光セルブロックは、交互に異なる電圧により発光することを特徴とする発光装置。 - 前記スイッチ部は、前記外部電源の電圧レベルに応じて前記第1発光セルブロック及び第2発光セルブロックに流れる電流経路を選択的に接続及び遮断することを特徴とする請求項1に記載の発光装置。
- 前記スイッチ部は、第1発光セルブロックの一端或いは第2発光セルブロックの一端に接続されることを特徴とする請求項2に記載の発光装置。
- 前記スイッチ部は、前記外部電源の電圧レベルを判断する電圧レベル判断部をさらに有することを特徴とする請求項2に記載の発光装置。
- 前記外部電源は、電圧レベルが時間的に連続的に周期的に変化することを特徴とする請求項2に記載の発光装置。
- 前記発光部は、第3発光セルブロックを更に有し、
前記第1乃至第3発光セルブロックは、前記外部電源の電圧レベルに応じて順次に発光することを特徴とする請求項1に記載の発光装置。 - 前記第1発光セルブロックと前記第2発光セルブロックは、並列接続されることを特徴とする請求項4に記載の発光装置。
- 前記第1発光セルブロック及び第2発光セルブロックそれぞれの発光セルは、ウェハ上部の一定領域に離隔されて形成され、エアブリッジ工程或いはステップカバー工程を通じて、直列接続されることを特徴とする請求項1に記載の発光装置。
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