JP2012177928A - 表示装置 - Google Patents
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- JP2012177928A JP2012177928A JP2012099675A JP2012099675A JP2012177928A JP 2012177928 A JP2012177928 A JP 2012177928A JP 2012099675 A JP2012099675 A JP 2012099675A JP 2012099675 A JP2012099675 A JP 2012099675A JP 2012177928 A JP2012177928 A JP 2012177928A
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Images
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
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- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/2007—Display of intermediate tones
- G09G3/2018—Display of intermediate tones by time modulation using two or more time intervals
- G09G3/2022—Display of intermediate tones by time modulation using two or more time intervals using sub-frames
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- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
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- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
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- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
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- G09G3/3275—Details of drivers for data electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
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Abstract
【解決手段】時間階調方式を用いる。且つEL駆動用TFTを、オン状態において飽和領域で動作させることにより、EL駆動用TFTのドレイン電流を一定に保つことができる。これにより、EL素子に一定の電流を流すことができ、正確な階調表示の高画質なアクティブマトリクス型EL表示装置が提供される。
【選択図】図1
Description
又は有機ライトエミッティングダイオード(OLED:Organic Light Emitting Diode)とも呼ばれている。
は、書き込み期間中は0Vとなり、表示期間中はEL素子が発光する程度の大きさを有する。
ID=α(W/L)(VGS-Vth)2
V=VGS+RID
例えば、プラズマCVD法でSiH4、NH3、N2Oから作製される酸化窒化シリコン膜5002aを10〜200[nm](好ましくは50〜100[nm])形成し、同様にSiH4、N2Oから作製される酸化窒化水素化シリコン膜5002bを50〜200[nm](好ましくは100〜150[nm])の厚さに積層形成する。本実施例では下地膜5002を2層構造として示したが、前記絶縁膜の単層膜または2層以上積層させた構造として形成しても良い。
ゲート絶縁膜上に残渣を残すことなくエッチングするためには、10〜20[%]程度の割合でエッチング時間を増加させると良い。W膜に対する酸化窒化シリコン膜の選択比は2〜4(代表的には3)であるので、オーバーエッチング処理により、酸化窒化シリコン膜が露出した面は20〜50[nm]程度エッチングされることになる。こうして、第1のエッチング処理により第1の導電層と第2の導電層から成る第1の形状の導電層5011〜5016(第1の導電層5011a〜5016aと第2の導電層5011b〜5016b)を形成する。このとき、ゲート絶縁膜5007においては、第1の形状の導電層5011〜5016で覆われない領域は20〜50[nm]程度エッチングされ薄くなった領域が形成される。
(図8(B))
ドーピングの方法はイオンドープ法もしくはイオン注入法で行えば良い。イオンドープ法の条件はドーズ量を1×1013〜5×1014[atoms/cm2]とし、加速電圧を60〜100[keV]として行う。n型を付与する不純物元素として15族に属する元素、典型的にはリン(P)または砒素(As)を用いるが、ここではリン(P)を用いる。この場合、導電層5011〜5015がn型を付与する不純物元素に対するマスクとなり、自己整合的に第1の不純物領域5017〜5025が形成される。第1の不純物領域5017〜5025には1×1020〜1×1021[atoms/cm3]の濃度範囲でn型を付与する不純物元素を添加する。(図8(B))
の濃度は、第1の導電層5026a〜5030aのテーパー部の膜厚に従って緩やかな濃度勾配を有している。なお、第1の導電層5026a〜5030aのテーパー部と重なる半導体層において、第1の導電層5026a〜5030aのテーパー部の端部から内側に向かって若干、不純物濃度が低くなっているものの、ほぼ同程度の濃度である。
熱アニール法では酸素濃度が1[ppm]以下、好ましくは0.1[ppm]以下の窒素雰囲気中で400〜700[℃]、代表的には500〜600[℃]で行うものであり、本実施例では500[℃]で4時間の熱処理を行う。ただし、第3の形状の導電層5037〜5042に用いた配線材料が熱に弱い場合には、配線等を保護するため層間絶縁膜(シリコンを主成分とする)を形成した後で活性化を行うことが好ましい。
勿論、単色発光のEL表示装置とすることもできる。
、エポキシ樹脂、シリコーン樹脂、PVB(ポリビニルブチラル)またはEVA(エチレンビニルアセテート)を用いることができる。この充填材6004の内部に乾燥剤を設けておくと、吸湿効果を保持できるので好ましい。
板、PVF(ポリビニルフルオライド)フィルム、マイラーフィルム、ポリエステルフィルムまたはアクリルフィルムを用いることができる。なお、充填材6004としてPVBやEVAを用いる場合、数十μmのアルミニウムホイルをPVFフィルムやマイラーフィルムで挟んだ構造のシートを用いることが好ましい。
板、PVF(ポリビニルフルオライド)フィルム、マイラーフィルム、ポリエステルフィルムまたはアクリルフィルムを用いることができる。なお、充填材6004としてPVBやEVAを用いる場合、数十μmのアルミニウムホイルをPVFフィルムやマイラーフィルムで挟んだ構造のシートを用いることが好ましい。
であり、EL駆動用TFT4503のドレイン配線33に電気的に接続される。
画素電極43としてはアルミニウム合金膜、銅合金膜または銀合金膜など低抵抗な導電膜またはそれらの積層膜を用いることが好ましい。勿論、他の導電膜との積層構造としても良い。
そして、正孔注入層46の上には透明導電膜でなる陽極47が設けられる。本実施例の場合、発光層45で生成された光は上面側に向かって(TFTの形成された基板4501とは反対の方向に向かって)放射されるため、陽極は透光性でなければならない。透明導電膜としては酸化インジウムと酸化スズとの化合物や酸化インジウムと酸化亜鉛との化合物を用いることができるが、耐熱性の低い発光層や正孔注入層を形成した後で形成するため、可能な限り低温で成膜できるものが好ましい。
6906及びカラーフィルタ(B)(図示せず)がカバー材6804に形成されている点に特徴がある。本実施例のEL素子の構造とした場合、発光層から発した光の放射方向がカバー材側に向かうため、図16の構造とすればその光の経路にカラーフィルタを設置することができる。
、TPD(トリフェニルアミン誘導体)等を中心とした材料が知られている。ポリマー系有機物質として、π共役ポリマー系の物質が挙げられる。代表的には、PPV(ポリフェニレンビニレン)、PVK(ポリビニルカルバゾール)、ポリカーボネート等が挙げられる。
であり、本体2401、記録媒体(CD、LDまたはDVD等)2402、操作スイッチ2403、表示部(a)2404、表示部(b)2405等を含む。表示部(a)は主として画像情報を表示し、表示部(b)は主として文字情報を表示するが、本発明の駆動方法を用いるEL表示装置は記録媒体を備えた画像再生装置の表示部(a)2404、(b)2405に用いることができる。なお、記録媒体を備えた画像再生装置としては、CD再生装置、ゲーム機器などに本発明を用いることができる。
Claims (1)
- EL素子と、トランジスタとをそれぞれ有する画素を備え、
1フレーム期間を複数のサブフレーム期間に分割し、前記複数のサブフレーム期間それぞれにおいて、前記トランジスタのゲート電極に、第1のゲート電圧または第2のゲート電圧が印加され、
前記第1のゲート電圧が、前記トランジスタのゲート電極に印加されると、前記トランジスタのドレイン電流が、前記EL素子の両電極間に流れ、前記EL素子は発光状態となり、
前記第2のゲート電圧が、前記トランジスタのゲート電極に印加されると、前記トランジスタが非導通状態となって、前記EL素子は非発光状態となる表示装置の駆動方法であって、
前記第1のゲート電圧の絶対値は、前記トランジスタのドレイン・ソース間の電圧の絶対値以下であることを特徴とする表示装置の駆動方法。
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US10269312B2 (en) | 2015-06-02 | 2019-04-23 | Samsung Display Co., Ltd. | Display panel driving apparatus, method of driving display panel using the same, and display apparatus having the same |
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US6879110B2 (en) | 2000-07-27 | 2005-04-12 | Semiconductor Energy Laboratory Co., Ltd. | Method of driving display device |
SG114502A1 (en) * | 2000-10-24 | 2005-09-28 | Semiconductor Energy Lab | Light emitting device and method of driving the same |
US6753654B2 (en) * | 2001-02-21 | 2004-06-22 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and electronic appliance |
TW582000B (en) | 2001-04-20 | 2004-04-01 | Semiconductor Energy Lab | Display device and method of driving a display device |
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US10269312B2 (en) | 2015-06-02 | 2019-04-23 | Samsung Display Co., Ltd. | Display panel driving apparatus, method of driving display panel using the same, and display apparatus having the same |
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Also Published As
Publication number | Publication date |
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JP2015132835A (ja) | 2015-07-23 |
US20070085783A1 (en) | 2007-04-19 |
US7158104B2 (en) | 2007-01-02 |
US8035583B2 (en) | 2011-10-11 |
US20040012550A1 (en) | 2004-01-22 |
US20130328499A1 (en) | 2013-12-12 |
US8508439B2 (en) | 2013-08-13 |
JP6419229B2 (ja) | 2018-11-07 |
JP2016075954A (ja) | 2016-05-12 |
JP2017068283A (ja) | 2017-04-06 |
US20170053974A1 (en) | 2017-02-23 |
US20120092236A1 (en) | 2012-04-19 |
US9489884B2 (en) | 2016-11-08 |
US6879110B2 (en) | 2005-04-12 |
US20020047568A1 (en) | 2002-04-25 |
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