JP2012124309A - 現像方法、現像装置、およびこれを備える塗布現像処理システム - Google Patents

現像方法、現像装置、およびこれを備える塗布現像処理システム Download PDF

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Publication number
JP2012124309A
JP2012124309A JP2010273530A JP2010273530A JP2012124309A JP 2012124309 A JP2012124309 A JP 2012124309A JP 2010273530 A JP2010273530 A JP 2010273530A JP 2010273530 A JP2010273530 A JP 2010273530A JP 2012124309 A JP2012124309 A JP 2012124309A
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JP
Japan
Prior art keywords
substrate
developer
developing
photoresist film
transport
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2010273530A
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English (en)
Japanese (ja)
Inventor
Tetsuya Sada
徹也 佐田
Hideaki Goto
英昭 後藤
Atsushi Nagata
篤史 永田
Maki Fujiwara
真樹 藤原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2010273530A priority Critical patent/JP2012124309A/ja
Priority to TW100144861A priority patent/TW201243906A/zh
Priority to CN201110401536.0A priority patent/CN102540770B/zh
Priority to KR1020110130208A priority patent/KR20120064039A/ko
Publication of JP2012124309A publication Critical patent/JP2012124309A/ja
Pending legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/3042—Imagewise removal using liquid means from printing plates transported horizontally through the processing stations
    • G03F7/3064—Imagewise removal using liquid means from printing plates transported horizontally through the processing stations characterised by the transport means or means for confining the different units, e.g. to avoid the overflow
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes

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  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Public Health (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Epidemiology (AREA)
  • Health & Medical Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Environmental & Geological Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
JP2010273530A 2010-12-08 2010-12-08 現像方法、現像装置、およびこれを備える塗布現像処理システム Pending JP2012124309A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2010273530A JP2012124309A (ja) 2010-12-08 2010-12-08 現像方法、現像装置、およびこれを備える塗布現像処理システム
TW100144861A TW201243906A (en) 2010-12-08 2011-12-06 Developing method and developing apparatus and coating and developing apparatus with it
CN201110401536.0A CN102540770B (zh) 2010-12-08 2011-12-06 显影方法、显影装置及具备该显影装置的涂敷显影处理系统
KR1020110130208A KR20120064039A (ko) 2010-12-08 2011-12-07 현상 방법, 현상 장치, 및 이를 구비하는 도포 현상 처리 시스템

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010273530A JP2012124309A (ja) 2010-12-08 2010-12-08 現像方法、現像装置、およびこれを備える塗布現像処理システム

Publications (1)

Publication Number Publication Date
JP2012124309A true JP2012124309A (ja) 2012-06-28

Family

ID=46347934

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010273530A Pending JP2012124309A (ja) 2010-12-08 2010-12-08 現像方法、現像装置、およびこれを備える塗布現像処理システム

Country Status (4)

Country Link
JP (1) JP2012124309A (ko)
KR (1) KR20120064039A (ko)
CN (1) CN102540770B (ko)
TW (1) TW201243906A (ko)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016072414A (ja) * 2014-09-30 2016-05-09 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
JP2016163037A (ja) * 2015-03-05 2016-09-05 新電元工業株式会社 レジスト現像装置、レジスト現像方法及び半導体装置の製造方法
WO2018216612A1 (ja) * 2017-05-26 2018-11-29 シャープ株式会社 基板処理装置
CN110610853A (zh) * 2018-06-15 2019-12-24 东京毅力科创株式会社 基片处理装置和基片处理方法

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6713910B2 (ja) * 2016-11-11 2020-06-24 株式会社Ｓｃｒｅｅｎホールディングス 現像装置、基板処理装置、現像方法および基板処理方法
KR102414893B1 (ko) * 2016-12-02 2022-06-30 도쿄엘렉트론가부시키가이샤 기판 처리 장치, 기판 처리 방법 및 기억 매체
TWI833688B (zh) * 2016-12-19 2024-03-01 日商東京威力科創股份有限公司 顯像處理方法、電腦記憶媒體及顯像處理裝置
CN108469719A (zh) * 2018-04-28 2018-08-31 武汉华星光电技术有限公司 显影装置及方法
JP2021093396A (ja) * 2019-12-06 2021-06-17 東京エレクトロン株式会社 基板処理装置、および基板処理方法

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08115969A (ja) * 1987-10-31 1996-05-07 Dainippon Screen Mfg Co Ltd 基板の表面処理装置
JPH1187210A (ja) * 1997-09-02 1999-03-30 Dainippon Screen Mfg Co Ltd 基板処理装置および基板処理方法
JP2003100581A (ja) * 2001-09-20 2003-04-04 Tokyo Electron Ltd 液処理装置および液処理方法
JP2008512003A (ja) * 2004-09-01 2008-04-17 東京エレクトロン株式会社 半導体プロセスにおける、ウエハ上に形成された構造物の限界寸法の制御
JP2009302461A (ja) * 2008-06-17 2009-12-24 Tokyo Electron Ltd 基板処理装置及び基板処理方法
JP2010093162A (ja) * 2008-10-10 2010-04-22 Sharp Corp 液処理装置および液処理方法
JP2010199150A (ja) * 2009-02-23 2010-09-09 Tokyo Electron Ltd 基板処理装置及び基板処理方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4654119B2 (ja) * 2005-11-29 2011-03-16 東京エレクトロン株式会社 塗布・現像装置及び塗布・現像方法
TW200919117A (en) * 2007-08-28 2009-05-01 Tokyo Electron Ltd Coating-developing apparatus, coating-developing method and storage medium

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08115969A (ja) * 1987-10-31 1996-05-07 Dainippon Screen Mfg Co Ltd 基板の表面処理装置
JPH1187210A (ja) * 1997-09-02 1999-03-30 Dainippon Screen Mfg Co Ltd 基板処理装置および基板処理方法
JP2003100581A (ja) * 2001-09-20 2003-04-04 Tokyo Electron Ltd 液処理装置および液処理方法
JP2008512003A (ja) * 2004-09-01 2008-04-17 東京エレクトロン株式会社 半導体プロセスにおける、ウエハ上に形成された構造物の限界寸法の制御
JP2009302461A (ja) * 2008-06-17 2009-12-24 Tokyo Electron Ltd 基板処理装置及び基板処理方法
JP2010093162A (ja) * 2008-10-10 2010-04-22 Sharp Corp 液処理装置および液処理方法
JP2010199150A (ja) * 2009-02-23 2010-09-09 Tokyo Electron Ltd 基板処理装置及び基板処理方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016072414A (ja) * 2014-09-30 2016-05-09 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
JP2016163037A (ja) * 2015-03-05 2016-09-05 新電元工業株式会社 レジスト現像装置、レジスト現像方法及び半導体装置の製造方法
WO2018216612A1 (ja) * 2017-05-26 2018-11-29 シャープ株式会社 基板処理装置
CN110610853A (zh) * 2018-06-15 2019-12-24 东京毅力科创株式会社 基片处理装置和基片处理方法

Also Published As

Publication number Publication date
CN102540770B (zh) 2015-07-22
TW201243906A (en) 2012-11-01
CN102540770A (zh) 2012-07-04
KR20120064039A (ko) 2012-06-18

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