JP5014811B2 - 基板の処理方法 - Google Patents
基板の処理方法 Download PDFInfo
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- JP5014811B2 JP5014811B2 JP2007011262A JP2007011262A JP5014811B2 JP 5014811 B2 JP5014811 B2 JP 5014811B2 JP 2007011262 A JP2007011262 A JP 2007011262A JP 2007011262 A JP2007011262 A JP 2007011262A JP 5014811 B2 JP5014811 B2 JP 5014811B2
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C26/00—Coating not provided for in groups C23C2/00 - C23C24/00
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/80—Etching
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
- H01L21/67178—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers vertical arrangement
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
- H01L21/67225—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one lithography chamber
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67742—Mechanical parts of transfer devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67745—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber characterized by movements or sequence of movements of transfer devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68707—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a robot blade, or gripped by a gripper for conveyance
Description
On Glass)膜である場合、除去液にはフッ酸等の薬液が用いられる。また例えば塗布膜が有機系材料のレジスト膜である場合、除去液にはPGMEA(ペグミア)等、あるいはアセトン系、ケトン系の溶剤が用いられる。
On Glass)材料、あるいは有機系材料のレジスト等が用いられる。
Vapor Deposition)法によって、ウェハWの裏面に薄膜を形成してもよい。すなわち、ウェハWの裏面に原料ガスを供給し、化学触媒反応によってウェハWの裏面に薄膜を堆積させることで、ウェハWの裏面を薄膜で保護してもよい。
本発明はこの例に限らず種々の態様を採りうるものである。本発明は、基板がウェハ以外のFPD(フラットパネルディスプレイ)、フォトマスク用のマスクレチクルなどの他の基板である場合にも適用できる。
200 塗布膜除去装置
220 スピンチャック
221 回転機構
230 除去液供給ノズル
250 処理容器
260 搬送アーム
263 回動機構
265 搬送機構
270 リンスノズル
300 塗布膜形成装置
500 塗布膜除去システム
600 塗布膜形成システム
W ウェハ
Claims (7)
- 少なくとも基板に対してフォトリソグラフィー処理とエッチング処理をこの順で複数回行う基板の処理方法であって、
前記フォトリソグラフィー処理における露光処理を行った後に、基板の裏面に塗布膜を形成する工程と、
基板の裏面に前記塗布膜を形成した状態で、基板の表面のエッチング処理を行う工程と、
前記エッチング処理を行った後、次のフォトリソグラフィー処理において、レジスト膜の形成処理を行ってから露光処理を行うまでの間に、前記塗布膜を除去する工程と、を有することを特徴とする、基板の処理方法。 - 前記塗布膜を形成する工程は、
基板を反転して、当該基板の裏面を上側に向ける工程と、
前記基板の裏面に塗布液を塗布する工程と、
前記基板の裏面に塗布された塗布液を硬化させる工程と、を有することを特徴とする、請求項1に記載の基板の処理方法。 - 前記塗布膜を除去する工程は、
前記塗布膜に除去液を供給する工程を有することを特徴とする、請求項1又は2に記載の基板の処理方法。 - 前記塗布膜を除去する工程は、
前記塗布膜に除去液を供給する前に、基板を反転して、当該基板の裏面を上側に向ける工程を有することを特徴とする、請求項1〜3のいずれかに記載の基板の処理方法。 - 前記塗布膜を形成する工程の直前に、基板の裏面を洗浄する工程を有することを特徴とする、請求項1〜4のいずれかに記載の基板の処理方法。
- 前記基板の裏面に塗布された塗布液は、加熱されて硬化することを特徴とする、請求項1〜5のいずれかに記載の基板の処理方法。
- 前記基板の裏面に塗布された塗布液は、紫外線または電子線が照射されて硬化することを特徴とする、請求項1〜5のいずれかに記載の基板の処理方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007011262A JP5014811B2 (ja) | 2007-01-22 | 2007-01-22 | 基板の処理方法 |
US12/015,029 US20080176002A1 (en) | 2007-01-22 | 2008-01-16 | Substrate treatment method, coating film removing apparatus, and substrate treatment system |
US13/161,185 US8366872B2 (en) | 2007-01-22 | 2011-06-15 | Substrate treatment method, coating film removing apparatus, and substrate treatment system |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007011262A JP5014811B2 (ja) | 2007-01-22 | 2007-01-22 | 基板の処理方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008177471A JP2008177471A (ja) | 2008-07-31 |
JP5014811B2 true JP5014811B2 (ja) | 2012-08-29 |
Family
ID=39641516
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007011262A Active JP5014811B2 (ja) | 2007-01-22 | 2007-01-22 | 基板の処理方法 |
Country Status (2)
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US (2) | US20080176002A1 (ja) |
JP (1) | JP5014811B2 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10002770B2 (en) | 2012-08-17 | 2018-06-19 | SCREEN Holdings Co., Ltd. | Substrate processing device and substrate processing method for carrying out chemical treatment for substrate |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI341872B (en) * | 2006-08-07 | 2011-05-11 | Ind Tech Res Inst | Plasma deposition apparatus and depositing method thereof |
JP5014811B2 (ja) | 2007-01-22 | 2012-08-29 | 東京エレクトロン株式会社 | 基板の処理方法 |
KR20110050558A (ko) * | 2008-10-07 | 2011-05-13 | 가와사키 쥬코교 가부시키가이샤 | 기판 반송 로봇 및 시스템 |
JP2011187519A (ja) * | 2010-03-05 | 2011-09-22 | Disco Corp | ウエーハ洗浄装置のチャックテーブル |
CN102371582A (zh) * | 2010-08-16 | 2012-03-14 | 深圳富泰宏精密工业有限公司 | 吸盘式机械手 |
JP5242824B1 (ja) * | 2012-02-29 | 2013-07-24 | 株式会社エヌ・ピー・シー | 導電性ペースト塗布機構及びセル配線装置 |
JP5926086B2 (ja) * | 2012-03-28 | 2016-05-25 | 株式会社Screenホールディングス | 基板処理装置および基板処理方法 |
US9875916B2 (en) | 2012-07-09 | 2018-01-23 | Tokyo Electron Limited | Method of stripping photoresist on a single substrate system |
JP6100487B2 (ja) * | 2012-08-20 | 2017-03-22 | 株式会社Screenホールディングス | 基板処理装置 |
US20170301567A9 (en) * | 2012-11-20 | 2017-10-19 | Tokyo Electron Limited | System of controlling treatment liquid dispense for spinning substrates |
JP6000822B2 (ja) * | 2012-11-26 | 2016-10-05 | 東京エレクトロン株式会社 | 基板洗浄方法および基板洗浄システム |
JP6081814B2 (ja) * | 2013-02-20 | 2017-02-15 | 株式会社ディスコ | 洗浄装置および洗浄装置を備えた加工装置 |
US9475272B2 (en) | 2014-10-09 | 2016-10-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | De-bonding and cleaning process and system |
JP6509103B2 (ja) * | 2015-12-17 | 2019-05-08 | 東京エレクトロン株式会社 | 基板処理方法、基板処理装置、及び基板処理システム |
KR102529592B1 (ko) * | 2018-06-07 | 2023-05-08 | 에이씨엠 리서치 (상하이), 인코포레이티드 | 반도체 웨이퍼를 세정하기 위한 장치 및 방법 |
JP7037459B2 (ja) * | 2018-09-10 | 2022-03-16 | キオクシア株式会社 | 半導体製造装置および半導体装置の製造方法 |
JP7152279B2 (ja) * | 2018-11-30 | 2022-10-12 | 株式会社荏原製作所 | 研磨装置 |
KR20200102612A (ko) * | 2019-02-21 | 2020-09-01 | 세메스 주식회사 | 기판 처리 장치 및 기판 처리 방법 |
WO2020213424A1 (ja) * | 2019-04-15 | 2020-10-22 | 東京エレクトロン株式会社 | 基板処理システム及び基板処理装置 |
KR102523437B1 (ko) * | 2020-12-29 | 2023-04-18 | 세메스 주식회사 | 기판 처리 장치 및 방법 |
JP2023139604A (ja) * | 2022-03-22 | 2023-10-04 | 株式会社Screenホールディングス | 基板処理方法および基板処理装置 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61191035A (ja) * | 1985-02-20 | 1986-08-25 | Rohm Co Ltd | 半導体装置の製造方法 |
JP2746669B2 (ja) | 1989-07-20 | 1998-05-06 | 東京エレクトロン株式会社 | 洗浄装置及び洗浄方法 |
JP3052105B2 (ja) * | 1992-11-20 | 2000-06-12 | 東京エレクトロン株式会社 | 洗浄処理装置 |
US5518542A (en) * | 1993-11-05 | 1996-05-21 | Tokyo Electron Limited | Double-sided substrate cleaning apparatus |
TW480584B (en) * | 1999-08-17 | 2002-03-21 | Tokyo Electron Ltd | Solution processing apparatus and method |
SG185822A1 (en) * | 2000-02-01 | 2012-12-28 | Tokyo Electron Ltd | Substrate processing apparatus and substrate processing method |
US6752585B2 (en) * | 2001-06-13 | 2004-06-22 | Applied Materials Inc | Method and apparatus for transferring a semiconductor substrate |
JP3958539B2 (ja) * | 2001-08-02 | 2007-08-15 | 東京エレクトロン株式会社 | 基板処理装置及び基板処理方法 |
US7077585B2 (en) * | 2002-07-22 | 2006-07-18 | Yoshitake Ito | Developing method and apparatus for performing development processing properly and a solution processing method enabling enhanced uniformity in the processing |
JP4005879B2 (ja) * | 2002-08-30 | 2007-11-14 | 株式会社東芝 | 現像方法、基板処理方法、及び基板処理装置 |
US7486377B2 (en) * | 2003-12-02 | 2009-02-03 | Tokyo Electron Limited | Developing method and developing apparatus |
JP2005296705A (ja) * | 2004-04-06 | 2005-10-27 | Seiko Epson Corp | スピンコータ用チャック、蒸着マスクの製造方法、及び有機el装置の製造方法 |
JP2006049757A (ja) * | 2004-08-09 | 2006-02-16 | Tokyo Electron Ltd | 基板処理方法 |
JP4426403B2 (ja) * | 2004-08-31 | 2010-03-03 | 東京エレクトロン株式会社 | レーザー処理装置 |
TWI286353B (en) * | 2004-10-12 | 2007-09-01 | Tokyo Electron Ltd | Substrate processing method and substrate processing apparatus |
JP5014811B2 (ja) | 2007-01-22 | 2012-08-29 | 東京エレクトロン株式会社 | 基板の処理方法 |
JP4937772B2 (ja) * | 2007-01-22 | 2012-05-23 | 東京エレクトロン株式会社 | 基板の処理方法 |
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2007
- 2007-01-22 JP JP2007011262A patent/JP5014811B2/ja active Active
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2008
- 2008-01-16 US US12/015,029 patent/US20080176002A1/en not_active Abandoned
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2011
- 2011-06-15 US US13/161,185 patent/US8366872B2/en active Active
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10002770B2 (en) | 2012-08-17 | 2018-06-19 | SCREEN Holdings Co., Ltd. | Substrate processing device and substrate processing method for carrying out chemical treatment for substrate |
US11217452B2 (en) | 2012-08-17 | 2022-01-04 | SCREEN Holdings Co., Ltd. | Substrate processing device and substrate processing method for carrying out chemical treatment for substrate |
Also Published As
Publication number | Publication date |
---|---|
US20110240597A1 (en) | 2011-10-06 |
US20080176002A1 (en) | 2008-07-24 |
US8366872B2 (en) | 2013-02-05 |
JP2008177471A (ja) | 2008-07-31 |
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