201243906 六、發明說明： 【發明所屬之技術領域】 本發明是有關一種將形成在平面顯示器（FPD )用的 玻璃基板等的光阻膜加以顯像的顯像方法、顯像裝置及具 備彼之塗佈顯像處理系統。 【先前技術】 在製造FPD (平面顯示器）的製程之一，具有光微影 製程。於該製程中施行，在FPD用的玻璃基板形成光阻膜 ，將該光阻膜利用既定的光罩加以曝光，將已曝光的光阻 膜加以顯像的各步驟。 隨著FPD用的玻璃基板的大型化，光阻膜的形成步驟 和顯像步驟，一般是藉由包括滾輪和滾子等搬送機構一面 搬送玻璃基板一面進行（例如專利文獻1及2)。 在光阻膜的顯像步驟中，往玻璃基板的顯像液之供給 '既定時間之顯像、洗滌液的顯像液之沖洗、和洗滌液之 乾燥，是一面搬送玻璃基板一面進行。爲了讓依此所形成 的光阻圖案的線寬和孔徑等在玻璃基板的面內均勻化，因 此希望讓實質的顯像時間（供給顯像液，開始顯像後，至 利用洗滌液沖洗顯像液使顯像停止的間時），在玻璃基板 的面內爲均等的情形。因此，宜將對玻璃基板供給顯像液 時的基板搬送速度和以洗滌液沖洗顯像液時的基板搬送速 度成爲均等（參照專利文獻3 )。 〔先行技術文獻〕 -5- 201243906 〔專利文獻〕 [專利文獻1]日本特開第2007-5695號公報 [專利文獻2]日本特開第2008-159663號公報 [專利文獻3]日本專利第3 552 1 87號詳細說明書 【發明內容】 〔發明欲解決之課題〕 可是，爲了顯像液的再利用，有種情形是例如：將玻 璃基板傾斜，藉此使顯像液從玻璃基板流下來，回收顯像 液。此情形下，由於顯像液在玻璃基板上流動，在其流動 的下流側，光阻膜會被曝露在多量的顯像液，或者顯像液 實質被攪拌。於是，在顯像液流動的下流側，會促進光阻 膜的顯像（例如：線寬變窄），在玻璃基板的面內，光阻 劑圖案有可能不均化。亦即，在此種狀況下，即使將對玻 璃基板供給顯像液時的基板搬送速度和以洗滌液沖洗顯像 液時的基板搬送速度成爲均等，還是無法達到光阻劑圖案 的均勻化。 又，當對被搬送的玻璃基板的搬送方向的前端近傍供 給顯像液時（亦即顯像液開始供給時），玻璃基板上的顯 像液會有因顯像液的供給量（或供給速度）和基板搬送速 度而產生亂流，或因顯像液回流而促進顯像的情形。此情 形下，比起玻璃基板的後端側，於前端側，例如：產生線 寬變窄的事態。亦即，連在此種狀況下，即使將對玻璃基 板供給顯像液時的基板搬送速度和以洗滌液沖洗顯像液時 -6 - 201243906 的基板搬送速度成爲均等，還是無法達到光阻劑圖案的均 句化。 本發明，爲有鑑於上記事情而完成，提供一種藉由控 制對基板供給顯像液時的基板搬送速度和除去顯像液時的 基板的搬送速度，就能在基板的面內使光阻圖案均勻化的 光阻劑之顯像方法、顯像裝置及具備彼之塗佈顯像處理系 統。 〔用以解決課題之手段〕 藉由本發明之第1形態，提供一種光阻膜之顯像方法 ，包含：一邊以第一搬送速度來搬送表面具有已曝光的光 阻膜的基板、一邊對該表面供給顯像液的製程；以第二搬 送速度來搬送以前記顯像液覆蓋表面的前記基板的製程； 一邊以第三搬送速度（與前記第一搬送速度不同）來搬送 前記基板、一邊以氣體噴塗覆蓋該基板之表面的顯像液的 製程；和緊接在前記噴塗之製程，一邊以第三搬送速度來 搬送前記基板、一邊對前記表面供給洗滌液的製程。 藉由本發明之第2形態，提供一種光阻模之顯像裝置 ，具備：具有用來搬送表面具備已曝光之光阻膜的基板的 第一搬送機構、以及對以該第一搬送機構被搬送的前記基 板的表面供給顯像液的供給噴嘴的顯像液供給部；具有用 來搬送以從前記供給噴嘴所供給的前記顯像液覆蓋表面的 前記基板的第二搬送機構的顯像部；具有吐出氣體，來吹 開覆蓋前記基板表面的前記顯像液的吹風噴嘴、以及對著 201243906 該吹風噴嘴來搬送前記基板的第三搬送機構的吹 有對已吹開前記顯像液的前記基板表面供給洗滌 液供給噴嘴的洗滌部；和將第一搬送機構及前記 機構控制成利用前記第一搬送機構被搬送的前記 —搬送速度與利用前記第三搬送機構被搬送的前 第三搬送速度爲不同的控制部。 藉由本發明之第3形態，提供一種塗佈顯像 ，其具備：在基板上形成光阻膜的光阻膜形成裝 已曝光的前記光阻膜加以顯像的第2形態之光阻 裝置。 藉由本發明之第4形態，提供一種顯像處理 關一邊水平搬送基板、一邊對基板進行顯像處理 理裝置，其具備：用以對利用第一搬送速度被搬 ，供給顯像液的顯像液供給噴嘴；和爲了結束顯 —邊以第二搬送速度（與第一搬送速度不同）來 液過剩的基板、一邊對前記基板供給洗滌液的洗 噴嘴。 藉由本發明之第5形態，提供一種顯像處理 關一邊水平搬送基板、一邊對基板進行顯像處理 理裝置，其特徵爲：具有：用以對利用第一搬送 送的基板，供給顯像液的顯像液供給噴嘴；爲了 處理，一邊以第二搬送速度（與第一搬送速度不 送顯像液過剩的基板、一邊對前記基板供給洗滌 液供給噴嘴：和用來測定被形成在顯像處理結束 風部：具 液的洗滌 第三搬送 基板的第 記基板的 處理系統 置；和將 膜的顯像 裝置，有 的顯像處 送的基板 像處理， 搬送顯像 滌液供給 裝置，有 的顯像處 速度被搬 結束顯像 同）來搬 液的洗滌 的基板的 -8 - 201243906 圖案尺寸的測定部；根據前記測定部的測定結果•再度設 定前記第一速度或前記第二速度。 〔發明效果〕 藉由本發明之實施形態，提供一種藉由控制對基板供 給顯像液時的基板搬送速度和除去顯像液時的基板的搬送 速度，就能在基板的面內使光阻圖案均勻化的光阻劑之顯 像方法、顯像裝置及具備彼之塗佈顯像處理系統。 【實施方式】 以下，邊參照所附圖面、邊說明利用本發明之實施形 態的顯像裝置及具備彼之塗佈顯像處理系統。在以下說明 中，在相同或對應的零件或構件，附上相同或對應的參考 符號，省略重複的說明。 首先，邊參照第1圖、邊說明利用本發明之實施形態 的光阻劑之塗佈顯像處理系統。 如圖所示，塗佈顯像處理系統100，具備：載置著用 來收容複數個玻璃基板s (以下簡記爲基板S)的晶匣C 的晶匣站1 ;對基板S進行包括光阻劑之塗佈及顯像的一 連串處理的處理站2;和在處理站2，在與用來曝光被形 成在基板S表面的光阻膜的曝光裝置9之間，進行基板S 之移交的界面站4。晶匣站1、處理站2、及界面站4，是 沿著圖中的X方向配置。 晶匣站1具備：可在圖中Y方向並置晶匣C的載置台 -9- 201243906 12;和被結合在載置台12的X方向，在與處理站2之間 進行基板S的搬入搬出的搬送裝置11。搬送裝置11具有 搬送臂11a，搬送臂lla可沿著朝γ方向延伸的導軌1〇 移動，且可上下移動、前後移動及水平旋轉。 在處理站2，自晶匣站1起向著界面站4的方向，按 激元UV照射單元（e-UV) 21、洗滌洗淨單元（SCR) 22 、預熱單元（PH ) 23、黏著單元（AD ) 24、冷卻單元（ COL) 25、及光阻劑塗佈單元（CT) 26、減壓乾燥單元（ DP) 27、加熱處理單元（HT) 28、及冷卻單元（COL) 29 的順序配列。 又，在處理站2，自界面站4起向著晶匣站1的方向 ，按顯像單元（DEV ) 30、加熱處理單元（HT ) 31、冷卻 單元（COL ) 32、及檢查裝置（IP ) 35的順序配列。 在該些單元（及單元間），設有與包括顯像單元30 的滾子170 (後述）的滾子搬送機構相同的滾子搬送機構 。藉此，基板S，則沿著以圖中箭頭A所示的搬送線A和 以箭頭B所示的搬送線B，依序被搬送到上記單元。 有關如此所構成的光阻塗佈顯像處理系統100，基板 S是如下處理。 首先，藉由搬送裝置11的搬送臂lla，從載置在晶匣 站1的載置台12的晶匣C取出基板S，沿著搬送線A， 往處理站2的激元UV照射單元2 1搬送。在此，從發出 紫外域光的紫外線區光線燈，對基板S照射紫外域光，除 去吸附在基板S上的有機物。接著，往洗滌洗淨單元22 -10- 201243906 搬送基板s’邊將洗淨液（例如去離子水（DIw))供給 到基板S、邊藉由電刷等的洗淨構件，洗淨基板s的表面 ，利用鼓風機等乾燥。已洗淨乾燥的基板s，往預熱單元 23搬送’加熱進而乾燥。接著，基板s，往黏著單元24 搬送’對已加熱的基板S噴塗六甲基二矽氮烷（HMDS) ’藉此對基板S進行疏水化處理。疏水化處理後，基板s 往冷卻單元25搬送’對基板S吹送冷風，藉此冷卻基板 S，維持在既定溫度。 接著，基板S，往光阻塗佈單元26搬送。在光阻塗 佈單元26內，基板S —邊沿著搬送線A移動、一邊對基 板S上供給光阻液’在基板S上形成光阻膜。 形成光阻膜的基板S，在搬送線Α上被搬送，並往可 將內部空間構成減壓的減壓乾燥單元27搬送，在減壓環 境下乾燥光阻膜。接著，基板S往加熱處理單元28搬送 。在此，基板S被加熱，除去含在光阻膜的溶劑等。加熱 處理後，基板S往冷卻單元29搬送，對基板S吹送冷風 ，藉此冷卻基板S。 在冷卻單元29被冷卻的基板S，將搬送線A上被搬 送到下流側端部之後，藉由界面站4之可上下移動、前後 移動及水平旋轉的搬送臂43，搬送到基板S之移交部的 旋轉站（RS ) 44。接著，基板S利用搬送臂43被搬送到 外部裝置區塊90的周邊曝光裝置（EE)。在周邊曝光裝 置（EE)，爲了除去基板S的外周部的光阻膜，對基板S 進行曝光處理。接著，基板S，利用搬送臂43被搬送到 -11 - 201243906 曝光裝置9，光阻膜經由具有對應電路圖案之圖案的光罩 被曝光。再者，具有基板S，暫時被收容在旋轉站44上 的緩衝匣之後，被搬送到曝光裝置9的情形。已結束曝光 處理的基板S，利用搬送臂43被搬送到外部裝置區塊90 的印字曝光（TITLER)，在此對基板S寫入既定資訊。 然後，基板S在搬送線B上被搬送，直至顯像單元 30。在顯像單元30，如後述，已曝光的光阻膜利用顯像液 被顯像，且利用洗滌液沖洗顯像液，乾燥洗滌液。 接著，基板S在搬送線B上被搬送，直至加熱處理單 元31，在此被加熱，除去殘留在光阻膜的溶劑及洗滌液（ 水份）。再者，連在加熱處理單元31中，基板S也利用 滾子搬送機構在搬送線B上邊搬送邊加熱。在顯像單元 3 〇和加熱處理單元31之間，也可以設置施行顯像液之脫 色處理的i線U V照射單元。已在加熱處理單元3 1結束加 熱處理的基板S，被搬送至冷卻單元32，在此冷卻。 已冷卻的基板S，往檢查單兀3 5搬送，例如：進行 光阻圖案（線）的邊界尺寸（CD )的測定等檢測。此後， 基板S，利用設置在晶匣站1的搬送裝置11的搬送臂11a ，收容於載置在載置台12的既定晶匣C，結束一連串的 處理。 接著，一面參照第2圖、一面針對本實施形態之顯像 單元30做說明。第2圖（a)是顯像單元30的槪略俯視 圖，第2圖（b)是顯像單元30的槪略側視圖。在該些圖 中，爲了表示基板S與顯像單元30之各部的位置關係’ -12- 201243906 以圖面表示已在各部配置著基板s的狀態。 如圖面所示，顯像單元30，具有：自外部裝置區塊 90起向著加熱處理單元31(參照第1圖）的方向依序配 置的導入部30A、顯像液供給部30B、顯像部30C、吹風 部30D、及洗滌部30E。 導入部30A是連接在外部裝置區域90，從外部裝置 區域90取得表面形成光阻膜的基板S，往顯像液供給部 3 0B搬送。具體是在導入部3 0 A，互相平行地以既定間隔 並排複數個（圖示例爲8個）滾子170。該些滾子170, 比基板S的寬度稍長，配置於相同高度。因此，基板S安 定的被支持在滾子17〇上。又，滾子170的每一個，能以 中心、軸爲旋轉中心、旋轉，且可利用驅動裝置Μ 1驅動，朝 同方向以同速度旋轉。藉此，滾子170上的基板S，以既 定搬送速度被搬送。驅動裝置Ml，例如可爲電動馬達。 以下說明，註記爲馬達Μ1。馬達Μ1是利用控制部60控 制，藉此，滾子170的旋轉速度，亦即基板S的搬送速度 受到控制。 再者，由於滾子170、馬達Ml (驅動裝置）、及控制 部60，連顯像液供給部30B及顯像部30C也具有同樣的 構成，且產生同樣功能，因此該些說明，在顯像液供給部 3 0B及顯像部30C的說明中省略。 又，顯像單元30，也可具有配置在導入部30A與外 部裝置區塊90之間的搬入部。搬入部能具有與導入部 3 0A相同的構成，可在外部裝置區域90與顯像單元30之 -13- 201243906 間，作爲調整基板S之搬送間隔的緩衝作用。 顯像液供給部3 0B是配置成與導入部3 0A連接。具體 上是’導入部3 0A與顯像液供給部3 0B之邊界的滾子17〇 之間隔，大致等於導入部30A內及顯像液供給部30B內的 滾子170之間隔，而且滾子170之配置高度，在導入部 3 〇 A與顯像液供給部3 〇B之間相等。藉此，基板s，會從 導入部3 0 A順利的搬入到顯像液供給部3 〇B。又，在顯像 液供給部30B，設有對基板S的表面供給顯像液的顯像液 供給噴嘴50。顯像液供給噴嘴50，朝著與基板S的搬送 方向直交的方向（與滾子170之長邊方向平行的方向）延 伸，如第2圖（a)所示，比基板s的寬度還要稍微長一 些。顯像液供給噴嘴50，具有隔著既定間隔，開口朝下方 的複數個孔（或朝著顯像液供給噴嘴50的長邊方向延伸 的縫隙）’對著基板S之表面的全寬，供給來自顯像液供 給源（圖未表示）的顯像液。又，顯像供給噴嘴5 0，如第 2圖（b)所示，配置在導入部30A與顯像液供給部30B 的邊界附近。因此，與大致從導入部30往顯像液供給部 30B搬入的同時，對基板S開始供給顯像液。 顯像部30C是配置成與顯像液供給部30B連接。基板 S ’是在以顯像液供給部30B所供給的顯像液覆蓋表面的 狀態下，從顯像液供給部3 0 B往顯像部3 0 C搬入，以相同 狀態在顯像部30C內搬送。 吹風部30D是配置成與顯像給部30C連接。有關吹風 部3 0D，在沿著基板S之搬送方向的下流側，於滾子ι7〇 -14- 201243906 的配置高度設有段差。具體上，八個滾子170之中，自基 板S之搬送方向上流側起的第七個滾子170，是配置在比 第六個滾子170例如稍微高3mm至5mm的位置，進而， 第八個滾子170,是配置在比第六個滾子170例如稍微高 6mm至10mm的位置。因此，在吹風部3 0D內，利用滾子 170搬送的基板S，是凹狀翹起成從搬送方向的前端朝向 後端降低。藉由像這樣的翹起，覆蓋基板S之表面的顯像 液，會流向與基板S之搬送方向相反的方向，從基板S的 後端往下方流下來。在滾子170的下方，設有圖未表示的 托盤（或Pan )。往下方流下來的顯像液會收集到托盤， 通過設置在托盤的既定配管回收。藉此，可再利用顯像液 ，就能節省顯像液。 又，在吹風部30D，在與後段的洗滌部30E的邊界附 近配置吹風噴嘴51。吹風噴嘴51，如第2圖（a)所示， 朝著與基板S的搬送方向直交的方向延伸，比基板S的寬 度還要稍微長一些。在吹風噴嘴51的下部，以既定間隔 形成複數個孔（或朝著吹風噴嘴51的長邊方向延伸的縫 隙），來自清淨空氣供給源（圖未表示）的清淨空氣向下 方吐出，形成氣簾。基板S若橫切過氣簾，基板S上的顯 像液會因氣簾跨越整個寬度被吹成線狀。藉此，基板S上 的光阻膜的顯像會實質上的停止。 洗滌部30Ε是配置成與吹風部30D連接。具體上是， 沿著洗滌部30Ε的基板搬送方向的最上流側的滾子170, 是配置相對於沿著吹風部30D的基板搬送方向的最下流側 -15- 201243906 的滾子170，無法形成極端的段差，接續在最上流側滾子 170的滾子170，是配置成高度依序下降。藉此，在吹風 部30D (大致爲凹狀）翹起的基板S，在洗滌部30E反向 翹起，漸漸的變平坦。滾子170的長邊方向和間隔等，即 洗滌部30E亦與吹風部30D等相同。 又，在洗滌部3 0E，設有預洗滌噴嘴52。預洗滌噴嘴 52，如第2圖（a)所示，朝著與基板S的搬送方向直交 的方向延伸，比基板S的寬度還要稍微長一些，並且在下 部，以既定間隔形成複數個孔。預洗滌噴嘴52，與圖未表 示的洗滌液（例如：DIW )的供給源連接，跨越基板S的 整個寬度吐出洗滌液。預洗滌噴嘴52，是鄰接於吹風部 3 0D的洗滌噴嘴5 1 (例如以3 0mm的間隔）設置，顯像液 吹開之後，在光阻膜完全乾燥之前，就能以洗滌液來濕潤 光阻膜。因此，可將殘留在因顯像形成的光阻圖案的表面 或側面的顯像液，溶解到洗滌液中。又，相對於基板搬送 方向，在預洗滌噴嘴52的下流側，設有洗滌噴嘴53。洗 滌噴嘴53，與預洗滌噴嘴52相同，可涵蓋整個基板S的 寬度吐出洗滌液，藉此將溶解於洗滌液中的顯像液，與洗 滌液一起沖洗。又，洗滌噴嘴53配置成傾斜，朝向沿著 利用滾子170形成的基板S之傾斜的方向供給洗滌液。因 而可效率良好的沖洗顯像液。 顯像液已利用洗滌液沖洗過的基板s ’則往配置成與 洗滌液30E連接的乾燥部（圖示省略）搬送。乾燥部可具 備：與導入部30A等同樣的滾子搬送機構；對著利用滾子 -16- 201243906 搬送機構搬送的基板S吐出清淨空氣來乾燥基板S的氣刀 (圖未表示）。利用乾燥部乾燥的基板S，藉由滾子搬送 ，被搬送到加熱處理單元31(參照第1圖）。 再者，也可以在洗滌部30E和乾燥部之間，設置具有 一個或複數個洗滌噴嘴的另一個洗滌部。藉此就能更確實 的沖洗顯像液。 又，在顯像單元3 0，適當的設有檢測在顯像單元30 內被搬送的基板S之位置的複數個感測器（圖未表示）。 配合藉由該些感測器檢測的位置，馬達Ml至M5和滾子 1 7〇是利用控制部60控制，改變基板搬送速度，控制各噴 嘴50至53 。 接著，一面參照第3圖至第6圖、一面針對藉由本實 施形態之顯像單元的動作（顯像方法）做說明。在該些圖 面中，爲了方便，控制部60予以省略。 參照第3圖（a )，從外部裝置單元9 0 (第1圖）被 搬入的基板S，在導入部30 A內被搬送。圖示雖省略，但 在基板S的表面形成光阻膜，該光阻膜在曝光裝置9(第 1圖）曝光，潛像形成。在導入部3 0A中，基板S以搬送 速度VII搬送。又，導入部30A的後段的顯像液供給部 3 0 B，馬達Μ 2及滾子17 0利用控制部6 0 (第2圖）控制 ，事先設定成比在導入部30Α的搬送速度VII稍快的搬 送速度V21。 若基板S的前端往顯像液供給部30Β搬入，藉由感測 器（圖未表示）檢測，導入部30的馬達Ml及滾子170利 -17- 201243906 用控制部60控制，導入部30的搬送速度VI 1，會改變成 搬送速度V21 (顯像液供給部30B的搬送速度）。藉此， 基板S會以搬送速度V21從導入部30A往顯像液供給部 3 0B搬送。一方面，基板S的前端到達顯像液供給噴嘴5 〇 的正下方之同時，從顯像液供給噴嘴50對著基板S的表 面供給顯像液DL。供給到基板S的表面的顯像液DL，如 第3圖（b)所示，因表面張力停留在基板S的表面。顯 像液D L的供給，如第4圖（a )所示，持續到基板s的後 端通過顯像液供給噴嘴50的正下方，通過同時停止。藉 由以上，基板S的表面以顯像液DL覆蓋。 再者，當在顯像液供給部30B內搬送基板S時（當顯 像液供給時），在顯像液供給部30B的後段的顯像部30C ，利用控制部60將馬達M3及滾子170控制成顯像部30C 之基板S的搬送速度爲V3 1。搬送速度V3 1，是根據顯像 需要的時間（顯像時間）和顯像液供給噴嘴5 0與吹風噴 嘴51之間的距離決定。更具體是，決定成基板S的前端 到達顯像液供給噴嘴50的正下方之後，到達吹風噴嘴51 的時間，與所希望的顯像時間相等（也考慮到在顯像液供 給部30B的搬送速度V21 )。在本實施形態中，在顯像部 30C的搬送速度V31，設定爲比在顯像液供給部30B的搬 送速度V21稍慢。 基板S的後端通過顯像液供給噴嘴50的同時，若基 板S的前端往顯像部30C搬入，顯像液供給部30B的馬達 M2及滾子170利用控制部60控制，顯像液供給部30B的 -18- 201243906 搬送速度V 2 1，則與後段的顯像部3 0C的搬送速度V3 1相 等（第4圖（b))。藉此，基板S會如第5圖（a)所示 ，以搬送速度V31從顯像液供給部30B往顯像部30C搬 送。連此情形下，基板S的表面利用顯像液DL覆蓋。此 後’如第5圖（b )所示，基板S，表面仍以顯像液DL覆 蓋，利用搬送速度V3 1從顯像部30C進一步往吹風部30D 搬送。 如第6圖（a)所示，基板S的前端到達吹風部3 0D 的吹風噴嘴51的正下方，利用感測器（圖未表示）檢測 的話，吹風部30D的馬達M4及滾子170，利用控制部60 控制，基板S則以搬送速度V41搬送。搬送速度V41是 與後段的洗滌部30E所設定的搬送速度相等，比當在顯現 液供給部30B內搬送時的基板S的搬送速度V21 (第3圖 (b)及第4圖（a))稍快。又，當基板S到達吹風噴嘴 51的正下方時，利用吹風部30D的滾子170之配置，由 於基板S前端會昇高成翅起，因此如第6圖（a)所示， 顯像液DL會向後端流，從後端往下方流下來，經由托盤 (圖未表示）回收》 又，藉由因爲從吹風噴嘴51被吐出的清淨空氣形成 的氣簾，如第6圖（b)所示，基板S上的顯像液被吹開 ，顯像會藉此實際的停止。顯像液被吹開後，在比較短的 時間內，從預洗滌噴嘴52對基板S的表面供給洗滌液（ DIW )，基板S的表面會因洗滌液被弄濕，殘留在表面的 顯像液會溶入到洗滌液。再者，已溶入顯像液的洗滌液， -19· 201243906 則利用從洗滌噴嘴53供給的洗滌液沖洗’顯像液會更確 實的被去除。 再者，由於預洗滌噴嘴52吐出的洗滌液’藉由因吹 風噴嘴5 1形成的氣簾堵住，就不會流往吹風部30D側。 假設，來自預洗滌噴嘴52的洗滌液流經基板S的表面’ 與顯像液一起從基板S的後端往下方流下來的話’就會產 生對應洗滌液流動之圖案的顯像斑痕。然而’若藉由本實 施形態的顯像單元30，由於洗滌液會因吹風噴嘴51不會 流向基板S的上流側，因此不會產此種斑。 於洗滌部3 0E中，顯像液已藉由洗滌液沖洗過的基板 S，會往配置成與洗滌部30E連接的乾燥部（圖示省略） 搬送，基板S就會藉由從設置在乾燥部的氣刀（圖未表示 )吐出的清淨空氣被乾燥，利用滾子搬送到加熱處理單元 3 1 (參照第Γ圖）。 再者，對於在洗滌部30E和乾燥部之間設有別的洗滌 部（圖未表示）的情形下，在洗滌部30E中，顯像液已藉 由洗滌液沖洗過的基板S，會以既定搬送速度往別的洗滌 部搬送，在此，進一步洗淨，往乾燥部搬送。201243906 VI. [Technical Field] The present invention relates to a developing method, a developing device, and a display device for developing a photoresist film formed on a glass substrate or the like for a flat panel display (FPD). Coating the development processing system. [Prior Art] One of the processes for manufacturing an FPD (Planar Display) has a photolithography process. In the process, a photoresist film is formed on a glass substrate for FPD, and the photoresist film is exposed by a predetermined mask to expose the exposed photoresist film. In the case of increasing the size of the glass substrate for the FPD, the step of forming the photoresist film and the developing step are generally carried out by transporting the glass substrate by a transport mechanism such as a roller or a roller (for example, Patent Documents 1 and 2). In the developing step of the resist film, the supply of the developing liquid to the glass substrate, the development of the image for a predetermined period of time, the rinsing of the developing solution of the washing liquid, and the drying of the washing liquid are performed while conveying the glass substrate. In order to uniformize the line width and the aperture of the photoresist pattern formed in this manner in the plane of the glass substrate, it is desirable to allow a substantial development time (supplied to the developing solution, after the development of the image is developed, to the use of the washing liquid. In the case where the liquid stops the development of the image, it is uniform in the plane of the glass substrate. Therefore, it is preferable to equalize the substrate transport speed when the developer liquid is supplied to the glass substrate and the substrate transport speed when the developer liquid is rinsed with the washing liquid (see Patent Document 3). [Patent Document 1] Japanese Patent Laid-Open No. 2007-5159663 [Patent Document 3] Japanese Patent No. 3 552 1 87 Detailed Description of the Invention [Problems to be Solved by the Invention] However, in order to reuse the developing solution, for example, the glass substrate is tilted to flow the developing liquid from the glass substrate. Recover the imaging solution. In this case, since the developing liquid flows on the glass substrate, the photoresist film is exposed to a large amount of the developing liquid on the downstream side of the flow, or the developing liquid is substantially stirred. Therefore, development of the photoresist film (e.g., narrowing of the line width) is promoted on the downstream side of the flow of the developing liquid, and the photoresist pattern may be uneven in the surface of the glass substrate. In other words, even when the substrate transport speed when the developer liquid is supplied to the glass substrate is equal to the substrate transport speed when the developer liquid is washed by the cleaning liquid, the photoresist pattern cannot be uniformized. In addition, when the developing liquid is supplied to the front end of the glass substrate to be transported in the vicinity of the transport direction (that is, when the developing liquid is supplied), the amount of the developing liquid on the glass substrate may be supplied (or supplied). The turbulence flows due to the speed) and the substrate transport speed, or the development is promoted by the reflow of the developing liquid. In this case, on the front end side, for example, a situation in which the line width is narrowed is generated, compared to the rear end side of the glass substrate. In other words, even in the case where the substrate transport speed when the developer liquid is supplied to the glass substrate and the substrate transport speed when the developer liquid is washed with the washing liquid are equal, the photoresist cannot be obtained. The uniformity of the pattern. The present invention has been made in view of the above, and provides a resist pattern in the plane of the substrate by controlling the substrate transport speed when the developer is supplied to the substrate and the transport speed of the substrate when the developer liquid is removed. A method of developing a uniformized photoresist, a developing device, and a coating development processing system. [Means for Solving the Problem] According to a first aspect of the present invention, there is provided a method for developing a photoresist film, comprising: transporting a substrate having an exposed photoresist film on a surface at a first transport speed; a process of supplying a developing solution on the surface; a process of transporting the front substrate on which the developing liquid is covered on the surface at the second transfer speed; and transporting the front substrate at the third transfer speed (different from the first transfer speed) A process of spraying a developing solution covering the surface of the substrate with a gas spray; and a process of supplying the pre-recorded substrate at a third transport speed and supplying the washing liquid to the surface of the front surface immediately after the spraying process. According to a second aspect of the present invention, a development apparatus of a photoresist mold includes: a first conveyance mechanism having a substrate for conveying an exposed photoresist film on a surface thereof, and a first conveyance mechanism being conveyed by the first conveyance mechanism a surface of the front substrate; a developing liquid supply unit for supplying a supply nozzle of the developing liquid; and a developing unit for transporting a second transfer mechanism for the front substrate which is provided on the surface of the front surface of the front surface of the supply nozzle; a blow nozzle having a discharge gas for blowing a pre-recorded liquid covering the surface of the front substrate, and a third transfer mechanism for transporting the front substrate to the blow nozzle at 201243906, and a front substrate for blowing the pre-image liquid The washing unit that supplies the surface of the washing liquid supply nozzle; and the first conveying mechanism and the pre-recording mechanism are controlled to be transported by the first transfer mechanism and the first third transport speed that is transported by the third transfer mechanism. Different control departments. According to a third aspect of the present invention, there is provided a coating development comprising: a photoresist film of a second aspect in which a photoresist film formed on a substrate is formed of a photoresist film and an exposed front photoresist film is formed. According to a fourth aspect of the present invention, there is provided a development processing apparatus for performing a development process on a substrate while horizontally transporting a substrate, and providing a development image for supplying a developer liquid by the first conveyance speed. The liquid supply nozzle; and a washing nozzle that supplies the washing liquid to the front substrate in order to end the display at the second transfer speed (different from the first transfer speed). According to a fifth aspect of the present invention, there is provided a development processing apparatus for performing a development process on a substrate while horizontally transporting a substrate, wherein the substrate is supplied with a first liquid to be supplied with a developing liquid. In the case of the processing, the cleaning liquid supply nozzle is supplied to the front substrate at the second conveyance speed (the substrate is not sent to the substrate at the first conveyance speed), and the measurement is formed in the image. The processing end wind unit: a processing system for washing the first substrate of the third transfer substrate with a liquid; and a substrate image device for the image development device, and a substrate image for the image transfer, and transporting the image developing liquid supply device, The speed of the image of the image is the same as that of the substrate to be washed. -8 - 201243906 The measurement unit of the pattern size; the measurement result of the measurement unit according to the previous note. • The first speed or the second speed is set again. [Effect of the Invention] According to the embodiment of the present invention, it is possible to provide a resist pattern in the plane of the substrate by controlling the substrate transport speed when the developer liquid is supplied to the substrate and the substrate transport speed when the developer liquid is removed. A method of developing a uniformized photoresist, a developing device, and a coating development processing system. [Embodiment] Hereinafter, a developing device using the embodiment of the present invention and a coating development processing system therewith will be described with reference to the drawings. In the following description, the same or corresponding reference numerals are attached to the same or corresponding parts or components, and the repeated description is omitted. First, a coating development processing system using a photoresist according to an embodiment of the present invention will be described with reference to Fig. 1 . As shown in the figure, the coating development processing system 100 includes a wafer station 1 on which a wafer C for accommodating a plurality of glass substrates s (hereinafter abbreviated as a substrate S) is placed; and the substrate S is provided with a photoresist a processing station 2 for a series of processing of coating and development of the agent; and an interface for performing the transfer of the substrate S between the processing station 2 and the exposure device 9 for exposing the photoresist film formed on the surface of the substrate S Station 4. The wafer station 1, the processing station 2, and the interface station 4 are arranged along the X direction in the drawing. The wafer station 1 includes a mounting table -9-201243906 12 that can be placed in the Y direction in the drawing direction, and a substrate S that is coupled to the processing station 2 and is carried in and out of the mounting table 12 in the X direction. The conveying device 11. The transporting apparatus 11 has a transport arm 11a, and the transport arm 11a is movable along a guide rail 1〇 extending in the γ direction, and is movable up and down, forward and backward, and horizontally. At the processing station 2, from the wafer station 1 toward the interface station 4, an excimer UV irradiation unit (e-UV) 21, a washing and cleaning unit (SCR) 22, a preheating unit (PH) 23, an adhesive unit (AD) 24, cooling unit (COL) 25, and photoresist coating unit (CT) 26, reduced pressure drying unit (DP) 27, heat treatment unit (HT) 28, and cooling unit (COL) 29 Arranged. Further, at the processing station 2, from the interface station 4 toward the wafer station 1, the developing unit (DEV) 30, the heat processing unit (HT) 31, the cooling unit (COL) 32, and the inspection device (IP) are pressed. The order of 35 is arranged. A roller transport mechanism similar to the roller transport mechanism of the roller 170 (described later) including the developing unit 30 is provided between the units (and the units). Thereby, the substrate S is sequentially transported to the upper recording unit along the transport line A indicated by the arrow A in the figure and the transport line B indicated by the arrow B. With respect to the photoresist coating development processing system 100 thus constructed, the substrate S is processed as follows. First, the substrate S is taken out from the wafer C placed on the mounting table 12 of the wafer station 1 by the transfer arm 11a of the transfer device 11, and the radical UV irradiation unit 2 to the processing station 2 is transported along the transport line A. Transfer. Here, the ultraviolet light from the substrate S is irradiated from the ultraviolet light source emitting ultraviolet light to remove the organic matter adsorbed on the substrate S. Next, the cleaning unit 22 -10- 201243906 transports the substrate s' while supplying a cleaning liquid (for example, deionized water (DIw)) to the substrate S, and the substrate is cleaned by a cleaning member such as a brush. The surface is dried by a blower or the like. The dried substrate s is washed and transferred to the preheating unit 23 to be heated and dried. Next, the substrate s is transferred to the adhering unit 24 to spray the hexamethyldiaziridine (HMDS) onto the heated substrate S to hydrophobize the substrate S. After the hydrophobization treatment, the substrate s is transferred to the cooling unit 25, and cold air is blown onto the substrate S, whereby the substrate S is cooled and maintained at a predetermined temperature. Next, the substrate S is transferred to the photoresist coating unit 26. In the resist coating unit 26, the substrate S is moved along the transport line A while supplying a photoresist to the substrate S. A photoresist film is formed on the substrate S. The substrate S on which the photoresist film is formed is transported on the transport line, and is transported to the decompression drying unit 27 which can reduce the internal space, and the photoresist film is dried under reduced pressure. Next, the substrate S is transferred to the heat treatment unit 28. Here, the substrate S is heated to remove the solvent or the like contained in the photoresist film. After the heat treatment, the substrate S is transferred to the cooling unit 29, and cold air is blown onto the substrate S, whereby the substrate S is cooled. After the substrate S that has been cooled by the cooling unit 29 is transported to the downstream end portion by the transport line A, the transport arm 43 that can be moved up and down, back and forth, and horizontally rotated by the interface station 4 is transferred to the substrate S. Department of Rotation Station (RS) 44. Next, the substrate S is transported to the peripheral exposure device (EE) of the external device block 90 by the transfer arm 43. In the peripheral exposure device (EE), in order to remove the photoresist film on the outer peripheral portion of the substrate S, the substrate S is subjected to exposure processing. Next, the substrate S is transported to the exposure apparatus 9 by the transport arm 43, and the photoresist film is exposed through a mask having a pattern corresponding to the circuit pattern. Further, the substrate S is temporarily stored in the buffer unit after being placed in the buffer unit of the rotary station 44, and then transported to the exposure device 9. The substrate S having been subjected to the exposure processing is transferred to the external device block 90 by the transfer arm 43 (TITLER), and the predetermined information is written on the substrate S. Then, the substrate S is transported on the transport line B up to the developing unit 30. In the developing unit 30, as will be described later, the exposed resist film is developed using a developing liquid, and the developing liquid is washed with a washing liquid to dry the washing liquid. Next, the substrate S is conveyed on the conveyance line B until the heat treatment unit 31, where it is heated to remove the solvent and the washing liquid (water) remaining in the photoresist film. Further, in the heat treatment unit 31, the substrate S is also heated by the roller transport mechanism while being transported on the transport line B. Between the developing unit 3 〇 and the heat processing unit 31, an i-line U V irradiation unit that performs decoloring treatment of the developing liquid may be provided. The substrate S which has been subjected to the heat treatment in the heat treatment unit 31 is transferred to the cooling unit 32 and cooled there. The cooled substrate S is transported to the inspection unit 35, and for example, the measurement of the boundary size (CD) of the photoresist pattern (line) is performed. Thereafter, the substrate S is stored in a predetermined wafer C placed on the mounting table 12 by the transfer arm 11a provided in the transfer device 11 of the wafer station 1, and the series of processes is terminated. Next, the development unit 30 of the present embodiment will be described with reference to Fig. 2 . Fig. 2(a) is a schematic plan view of the developing unit 30, and Fig. 2(b) is a schematic side view of the developing unit 30. In these figures, in order to show the positional relationship of the respective portions of the substrate S and the developing unit 30' -12-201243906, the state in which the substrate s has been placed in each portion is shown in the figure. As shown in the figure, the developing unit 30 has an introduction unit 30A, a developing solution supply unit 30B, and a development image which are arranged in order from the external device block 90 toward the heat treatment unit 31 (see FIG. 1). The portion 30C, the air blowing portion 30D, and the washing portion 30E. The introduction portion 30A is connected to the external device region 90, and the substrate S having the surface on which the photoresist film is formed is taken from the external device region 90, and is transported to the developing solution supply unit 30B. Specifically, in the introduction unit 30A, a plurality of (eight in the illustrated example) rollers 170 are arranged in parallel at a predetermined interval in parallel with each other. The rollers 170 are slightly longer than the width of the substrate S and are disposed at the same height. Therefore, the substrate S is stably supported on the roller 17A. Further, each of the rollers 170 can be rotated about the center and the axis of rotation, and can be driven by the driving device Μ 1 to rotate at the same speed in the same direction. Thereby, the substrate S on the roller 170 is transported at a predetermined transport speed. The drive device M1 can be, for example, an electric motor. The following description is noted as motor Μ1. The motor unit 1 is controlled by the control unit 60, whereby the rotational speed of the roller 170, that is, the transport speed of the substrate S is controlled. Further, since the roller 170, the motor M1 (driving device), and the control unit 60 have the same configuration and the same function as the developing unit 30B and the developing unit 30C, the descriptions are displayed. The description of the liquid supply unit 30B and the developing unit 30C is omitted. Further, the developing unit 30 may have a loading unit disposed between the introduction unit 30A and the external device block 90. The carry-in unit can have the same configuration as the introduction unit 30A, and can act as a buffer for adjusting the transport interval of the substrate S between the external device area 90 and the developing unit 30 between -13 and 201243906. The developing liquid supply unit 30B is disposed to be connected to the introduction unit 30A. Specifically, the interval between the introduction portion 30A and the developing solution supply unit 30B is substantially equal to the interval between the rollers 170 in the introduction portion 30A and the developing liquid supply portion 30B, and the roller. The arrangement height of 170 is equal between the introduction unit 3A and the developing liquid supply unit 3B. Thereby, the substrate s is smoothly carried into the developing liquid supply unit 3 〇B from the introduction unit 30A. Further, the developing liquid supply unit 30B is provided with a developing liquid supply nozzle 50 for supplying a developing liquid to the surface of the substrate S. The developing liquid supply nozzle 50 extends in a direction orthogonal to the conveying direction of the substrate S (a direction parallel to the longitudinal direction of the roller 170), as shown in Fig. 2(a), which is larger than the width of the substrate s. A little longer. The developing liquid supply nozzle 50 has a plurality of holes (or slits extending in the longitudinal direction of the developing liquid supply nozzle 50) that are open downward at a predetermined interval, and are supplied to the full width of the surface of the substrate S. A developing solution from a developer supply source (not shown). Further, the development supply nozzle 50 is disposed in the vicinity of the boundary between the introduction portion 30A and the developing liquid supply portion 30B as shown in Fig. 2(b). Therefore, the supply of the developing liquid to the substrate S is started while the loading from the introduction unit 30 to the developing liquid supply unit 30B is substantially performed. The developing unit 30C is disposed to be connected to the developing liquid supply unit 30B. The substrate S' is carried in from the developing solution supply unit 30B to the developing unit 3 0 C in a state where the developing liquid supply surface 30B is covered by the developing liquid supply unit 30B, and is in the same state in the developing unit 30C. Transfer inside. The blowing unit 30D is disposed to be connected to the developing unit 30C. Regarding the blowing portion 30D, a step is provided at the arrangement height of the roller ι7 〇 -14 - 201243906 on the downstream side along the conveying direction of the substrate S. Specifically, among the eight rollers 170, the seventh roller 170 from the upstream side in the transport direction of the substrate S is disposed at a position slightly higher than the sixth roller 170 by, for example, 3 mm to 5 mm, and further, The eight rollers 170 are disposed at a position slightly higher than the sixth roller 170 by, for example, 6 mm to 10 mm. Therefore, in the blowing portion 30D, the substrate S conveyed by the roller 170 is concavely lifted so as to be lowered from the leading end in the conveying direction toward the rear end. By the lift-up as described above, the developer liquid covering the surface of the substrate S flows in a direction opposite to the direction in which the substrate S is transported, and flows downward from the rear end of the substrate S. Below the roller 170, a tray (or Pan) not shown is provided. The developing liquid flowing down is collected in a tray and recovered by a predetermined piping provided in the tray. Thereby, the developing solution can be reused, and the developing solution can be saved. Further, in the blowing portion 30D, the blowing nozzle 51 is disposed in the vicinity of the boundary of the washing portion 30E in the subsequent stage. As shown in Fig. 2(a), the blowing nozzle 51 extends in a direction orthogonal to the conveying direction of the substrate S, and is slightly longer than the width of the substrate S. In the lower portion of the blowing nozzle 51, a plurality of holes (or slits extending in the longitudinal direction of the blowing nozzle 51) are formed at predetermined intervals, and clean air from a clean air supply source (not shown) is discharged downward to form an air curtain. When the substrate S crosses the air curtain, the developing liquid on the substrate S is blown into a line shape by the air curtain across the entire width. Thereby, the development of the photoresist film on the substrate S is substantially stopped. The washing unit 30 is disposed to be connected to the blowing unit 30D. Specifically, the roller 170 on the most upstream side in the substrate transport direction along the washing unit 30A is a roller 170 that is disposed on the most downstream side -15-201243906 in the substrate transport direction along the air blowing portion 30D, and cannot be formed. The extreme step, the roller 170 following the most upstream roller 170, is arranged to descend in height. Thereby, the substrate S which is lifted up in the blowing portion 30D (substantially concave shape) is lifted up in the washing portion 30E, and gradually flattens. The longitudinal direction and the interval of the roller 170, that is, the washing portion 30E are also the same as the blowing portion 30D and the like. Further, a pre-wash nozzle 52 is provided in the washing unit 30E. The pre-washing nozzle 52 extends in a direction orthogonal to the conveying direction of the substrate S as shown in Fig. 2(a), is slightly longer than the width of the substrate S, and forms a plurality of holes at a predetermined interval in the lower portion. . The pre-washing nozzle 52 is connected to a supply source of a washing liquid (for example, DIW) not shown, and discharges the washing liquid across the entire width of the substrate S. The pre-washing nozzle 52 is disposed adjacent to the washing nozzle 5 1 of the blowing portion 30D (for example, at an interval of 30 mm), and after the developing solution is blown off, the washing liquid can be used to wet the light before the photoresist film is completely dried. Resistance film. Therefore, the developing liquid remaining on the surface or the side surface of the resist pattern formed by the development can be dissolved in the washing liquid. Further, a washing nozzle 53 is provided on the downstream side of the pre-washing nozzle 52 with respect to the substrate conveying direction. The washing nozzle 53 is similar to the pre-washing nozzle 52, and discharges the washing liquid so as to cover the entire width of the substrate S, whereby the developing liquid dissolved in the washing liquid is washed together with the washing liquid. Further, the washing nozzle 53 is disposed to be inclined, and supplies the washing liquid toward the direction along the inclination of the substrate S formed by the roller 170. Therefore, the developing solution can be washed efficiently. The substrate s' which has been washed with the washing liquid is transported to a drying portion (not shown) which is disposed to be connected to the washing liquid 30E. The drying unit may have a roller conveying mechanism similar to that of the introduction unit 30A or the like, and an air knife (not shown) for drying the substrate S by discharging the clean air against the substrate S conveyed by the roller-16-201243906 conveying mechanism. The substrate S dried by the drying section is transported by the rollers and transported to the heat treatment unit 31 (see Fig. 1). Further, another washing portion having one or a plurality of washing nozzles may be provided between the washing portion 30E and the drying portion. This allows the imaging solution to be washed more reliably. Further, in the developing unit 30, a plurality of sensors (not shown) for detecting the position of the substrate S transported in the developing unit 30 are appropriately provided. In conjunction with the positions detected by the sensors, the motors M1 to M5 and the rollers 17 are controlled by the control unit 60 to change the substrate transport speed and control the respective nozzles 50 to 53. Next, the operation (development method) of the developing unit according to the present embodiment will be described with reference to Figs. 3 to 6 . In these drawings, the control unit 60 is omitted for convenience. Referring to Fig. 3(a), the substrate S carried in from the external device unit 90 (Fig. 1) is transported in the introduction portion 30A. Although not shown, a photoresist film is formed on the surface of the substrate S, and the photoresist film is exposed in the exposure device 9 (Fig. 1) to form a latent image. In the introduction unit 30A, the substrate S is transported at the transport speed VII. Further, the developing solution supply unit 30B in the subsequent stage of the introduction unit 30A, the motor unit 2 and the roller 17 0 are controlled by the control unit 60 (second drawing), and are set in advance to be slightly larger than the conveying speed VII of the introduction unit 30A. Fast transfer speed V21. When the front end of the substrate S is carried into the developing liquid supply unit 30, it is detected by a sensor (not shown), and the motor M1 and the roller 170 of the introduction unit 30 are controlled by the control unit 60, and the introduction unit 30 is controlled. The conveyance speed VI1 is changed to the conveyance speed V21 (the conveyance speed of the development liquid supply part 30B). Thereby, the substrate S is transported from the introduction unit 30A to the developing liquid supply unit 30B at the conveyance speed V21. On the other hand, the front end of the substrate S reaches the developing liquid supply nozzle 5 〇 directly, and the developing liquid DL is supplied from the developing liquid supply nozzle 50 to the surface of the substrate S. The developing liquid DL supplied to the surface of the substrate S, as shown in Fig. 3(b), stays on the surface of the substrate S due to the surface tension. The supply of the developer D L is continued until the rear end of the substrate s passes through the developer liquid supply nozzle 50 as shown in Fig. 4(a), and is stopped at the same time. By the above, the surface of the substrate S is covered with the developing liquid DL. When the substrate S is transported in the developing liquid supply unit 30B (when the developing liquid is supplied), the motor M3 and the roller are controlled by the control unit 60 in the developing unit 30C in the subsequent stage of the developing liquid supply unit 30B. The transport speed of the substrate S controlled by the developing unit 30C is V3 1 . The transport speed V3 1 is determined based on the time (development time) required for development and the distance between the developing liquid supply nozzle 50 and the air blowing nozzle 51. More specifically, it is determined that the time until the leading end of the substrate S reaches the direct vicinity of the developing liquid supply nozzle 50 reaches the blowing nozzle 51, which is equal to the desired developing time (considering the conveyance of the developing liquid supply unit 30B) Speed V21). In the present embodiment, the conveying speed V31 of the developing unit 30C is set to be slightly slower than the conveying speed V21 of the developing liquid supply unit 30B. When the rear end of the substrate S passes through the developing liquid supply nozzle 50, the front end of the substrate S is carried into the developing portion 30C, and the motor M2 and the roller 170 of the developing liquid supply unit 30B are controlled by the control unit 60, and the developing liquid is supplied. The transport speed V 2 1 of the portion 30B -18-201243906 is equal to the transport speed V3 1 of the developing unit 30C in the subsequent stage (Fig. 4(b)). As a result, the substrate S is transported from the developing liquid supply unit 30B to the developing unit 30C at the transport speed V31 as shown in Fig. 5(a). In this case, the surface of the substrate S is covered with the developing liquid DL. Then, as shown in Fig. 5(b), the surface of the substrate S is covered with the developing liquid DL, and is transported from the developing unit 30C to the blowing unit 30D by the conveying speed V3 1 . As shown in Fig. 6(a), the front end of the substrate S reaches the blow nozzle 51 directly below the blower portion 30D, and the motor M4 and the roller 170 of the blower portion 30D are detected by a sensor (not shown). Controlled by the control unit 60, the substrate S is transported at the transport speed V41. The transport speed V41 is equal to the transport speed set by the washing unit 30E in the subsequent stage, and is higher than the transport speed V21 of the substrate S when transported in the liquid supply unit 30B (Fig. 3(b) and Fig. 4(a)). Slightly faster. Further, when the substrate S reaches directly below the air blowing nozzle 51, the arrangement of the rollers 170 of the air blowing portion 30D causes the front end of the substrate S to rise to a wing, so as shown in Fig. 6(a), the developing liquid The DL flows to the rear end, flows down from the rear end, and is recovered via a tray (not shown), and the air curtain formed by the clean air discharged from the air blowing nozzle 51 is as shown in Fig. 6(b). The developing liquid on the substrate S is blown off, and the image is actually stopped by this. After the developing solution is blown off, the washing liquid (DIW) is supplied from the pre-washing nozzle 52 to the surface of the substrate S in a relatively short period of time, and the surface of the substrate S is wetted by the washing liquid, and the image remains on the surface. The solution will dissolve into the wash solution. Further, the washing liquid which has been dissolved in the developing liquid, -19·201243906 is washed with the washing liquid supplied from the washing nozzle 53, and the developing liquid is more reliably removed. Further, since the washing liquid discharged from the pre-washing nozzle 52 is blocked by the air curtain formed by the blowing nozzle 51, it does not flow to the blowing portion 30D side. It is assumed that if the washing liquid from the pre-washing nozzle 52 flows through the surface of the substrate S and flows down from the rear end of the substrate S together with the developing liquid, a developing image corresponding to the pattern of the flow of the washing liquid is generated. However, with the developing unit 30 of the present embodiment, since the washing liquid does not flow to the upstream side of the substrate S by the blowing nozzle 51, such spots are not generated. In the washing unit 30E, the developing solution has been washed by the washing liquid, and the substrate S is placed in a drying unit (not shown) connected to the washing unit 30E, and the substrate S is placed in the drying unit. The clean air discharged from the air knife (not shown) of the unit is dried and transported to the heat treatment unit 31 by rollers (see the figure). Further, in the case where another washing portion (not shown) is provided between the washing portion 30E and the drying portion, in the washing portion 30E, the substrate S having the developing liquid washed by the washing liquid is The predetermined transport speed is transported to another washing unit, and is further washed and transported to the drying unit.
若舉列表示基板S的搬送速度，顯像液供給部30B中 ，從顯像液供給噴嘴5 0對基板S供給顯像液時的搬送速 度V21 (第3圖），例如可在60mm/sec至100mm/sec的 範圍，在吹風部3 0D中，當基板S通過利用吹風噴嘴51 的氣簾時的搬送速度V4 1(第6圖），例如可在12 0mm /sec至180mm/sec的範圖。當然，使用至少一枚的基板S -20- 201243906 進行上記顯像方法之後，依據已形成的光阻圖案（線寬和 孔徑等的尺寸）的面內均勻性，來決定搬送速度 V21、 V3 1、V41等爲佳。又，光阻圖案的面內均勻性，例如也 可以在比顯像單元3 0梢後段的檢查單元3 5中進行測定。 進而，在處理一批次量的基板途中，在檢査單元35中（ 式利用其他的檢查裝置），依據時間序列性取得的測定資 料，變更（或調整）搬送速度V21、V31、V41等。 如以上，在藉由本實施形態的顯像單元3 0的及顯像 方法中，在吹風部30D中，爲回收顯像液，使基板S前端 昇高成翹起，顯像液就會流往後端側。因此，基板S的後 端側曝露在多量的顯像液，而由於顯像液會因顯像液的流 動被攪拌，因此會促進在後端側的顯像。然而，吹風部 3 0D的搬送速度V41由於比顯像液供給部30B的搬送速度 V2 1稍快，因此可在基板S的後端側縮短顯像時間（顯像 液藉由顯像液供給噴嘴50供給後，至顯像液藉由來自吹 風噴嘴51的氣簾吹開的時間），能抵消顯像的促進。因 而，若藉由本發明之實施形態，就可提供基板S之光阻圖 案的面內均勻性未受損失的效果、優點。 又，若藉由本實施形態的顯像單元30，由於可以獨立 控制對基板S上供給顯像液DL供給時的基板搬送速度、 搬送利用已供給的顯像液DL覆蓋的基板S時的基板搬送 速度、和從基板S除去顯像液DL時的基板搬送速度，因 此配合使用的光阻和顯像液等，將基板搬送速度做各種變 更，藉此就能達到基板之面內的光阻圖案的均勻化。 -21 - 201243906 假設無法像這樣的控制基板搬送速度，在僅藉由顯像 時間而決定基板搬送速度的情形下，也會造成無法調整供 給顯像液時的基板搬送速度之事態。相反的，只要調整供 給顯像液時的基板搬送速度，配合該基板搬送速度，而產 生因改變顯像部30C的長度（基板的搬送距離）來確供顯 像時間之必要。然而，現實上不可能每次變更裝置構成。 亦即，若藉由本實施形態的顯像單元3 0，就能擴大製 程窗（餘白）。藉此，有助於PFD的性能提升和隨著良品 率改善的PFD之低價格化。又，提高亦能使用將來開發的 新光阻和顯像液之可能性，就能省下隨此所帶的裝置之更 新（retrofit )等。 以上，雖是一面參照本發明之實施形態一面說明本發 明，但本發明並不限於上述之實施形態，依照所附的申請 專利範圍，可能做各種變更或變形。 例如：基板S的前端達到吹風噴嘴5 1 (第2圖）之 正下方後，可以慢慢地加快吹風部3 0D的搬送速度。具體 上基板S的前端到達吹風噴嘴51之正下方後，只要藉由 控制部60將馬達M4及M5和滾子1 70控制成慢慢加快基 板S的搬送速度即可。如此一來，將在基板S之後端側的 顯像時間變得比在前端側的顯像時間稍微慢慢地縮短即可 。因而，可更確實的在基板S之後端側抵消顯像的促進。 又，在上記實施形態中，利用既定感測器來檢測基板 S的前端到達顯像液供給噴嘴50的正下方，藉此雖是從 顯像液供給噴嘴50將顯像液DL往基板S供給，但不限於 -22- 201243906 此。例如：可以依據在導入部3 0 A的既定位置（例 基板S之搬送方向的長度之略中間），設置檢測基 前端的感測器，藉由該感測器來檢測基板S之前端 和基板S的搬送速度，決定在基板S之前端到達顯 給噴嘴50之正下方時，從顯像液供給噴嘴50吐出 DL的時點。即使來自吹風噴嘴51的清淨空氣之吐 ，例如將檢測基板S之前端的感測器設置在吹風部 既定位置，就能同樣的做決定。 .又，在本實施形態的顯像單元3 0中，雖然在 3 0D，利用滾子1 70的配置將基板S傾斜回收顯像 也可以在吹風部30D，例如使基板S停止後使用昇 ，讓基板S上的顯像液從後端側流下來。 又，在不傾斜基板（不回收顯像液）的情形下 用本發明。例如：當在此情形下對基板供給顯像液 基板搬送速度很慢時，顯像液會在基板的前端側回 拌，因此具有在前端側促進顯像之虞。此情形下， 吹風噴嘴吹開顯像液時的基板搬送速度，變得比供 液時的基板搬送速度稍慢，藉此增長在基板之後端 際的顯像時間。藉此，可通過顯像時間的長期化， 後端側的顯像，就能維持光阻圖案的面內均句性。 此情形下，也可以將利用吹風噴嘴吹開顯像液時的 送速度緩緩地變慢。 接著，說明有關搬送速度V21和搬送速度V41 速度V21和搬送速度V41的値，是該塗佈顯像系 如沿著 板S之 的時點 像液供 顯像液 出時點 30D的 吹風部 液，但 降針等 ，也適 之際的 流或攪 將利用 給顯像 側的實 促進在 又，在 基板搬 。搬送 統 100 -23- 201243906 的操作員（作業員）決定，操作員從輸入部（圖未表示） 輸入。搬送速度V31的値，是由顯像處理的距離（顯像液 供給噴嘴50至預洗滌噴嘴52的距離）和顯像處理時間（ 事先決定）、搬送速度V2 1、搬送速度V41的値，利用控 制部60計算，來決定搬送速度V31。 在此，搬送速度V21過慢的話，會有產生問題的情形 。例如：搬送速度V21過慢（例如1〜20mm/秒）的情形 下，如第7圖所示，顯像液會因表面長力停留在基板的端 部，該部分的顯像處理，會在其他部分的處理更進一步， 在基板S上的顯像處理就會很不均勻。 相反的，搬送速度V2 1過快的話，也會有產生問題的 情形。例如：搬送速度V21過快（例如400mm/秒以上） 的情形下，顯像液無法佈滿在基板S的全面，在基板SI 有可能會產生一部分沒有顯像液的部分，在此情形下，在 基板S上的顯像處理也會很不均勻。 由該些情形，搬送速度V21，是將顯像液佈滿在基板 S的全面，而且可設定在盡可能快的速度。 其次，說明有關吹風部30D的下流側（吹風噴嘴51 附近）的基板的顯像處理。如第8圖所示，在基板S的 進行方向之後端的領域Η，會因基板S的變形產生顯像液 的流動。又，領域Η，顯像液的液量比其他領域還多。藉 由該些的主要因素，領域Η的顯像處理，具有比其他領域 稍微超前的情形。 像這樣，在基板S的面內，可考量各種顯像處理不均 -24- 201243906 的主要因素。而且，在基板S的面內，將搬送速度V2 1和 搬送速度V41設定成使顯像處理變均勻。 例如：顯像處理結束，以測定部（圖未表示）來測定 形成在該基板S之圖案的話，基板S的進行方向的前方領 域F的圖案尺寸比所要之値還細。此情形下，領域F的顯 像處理會比其他領域超前。因而，在下個基板S的顯像處 理開始之前，在搬送速度V2 1和搬送速度V41產生回饋 電阻。此情形下，再將搬送速度V2 1和搬送速度V4 1設 定成搬送速度乂2 1>搬送速度V41。若像這樣做再設定， 就能從下個基板S的顯像處理，進行均勻的處理。 接著，說明有關與上記相反的情形。例如：顯像處理 結束，以測定部（圖未表示）來測定形成在該基板S之圖 案的話，基板S的進行方向的後方領域Η的圖案尺寸比所 要之値還細。此情形下，領域Η的顯像處理會比其他領域 超前。因而，在下個基板S的顯像處理開始之前，在搬送 速度V21和搬送速度V4 1產生回饋電阻。此情形下，將 搬送速度V21和搬送速度V41再設定成搬送速度V21<搬 送速度V4 1。若像這樣做再設定，就能從下個基板S的顯 像處理，進行均勻的處理。 再者，在上述之實施形態，顯像處理結束之後，雖是 操作員（作業者）進行形成在基板S的圖案尺寸之測定和 搬送速度V21、搬送速度V4 1的再設定，但可形成將測定 部結合在該塗佈顯像系統1 〇〇，在顯像處理結束後，利用 該測定部自動的測定圖案尺寸，依據該測定結果，控制部 -25- 201243906 60自動的再設定搬送速度V21、搬送速度V41之値的構 成。若像這樣，更能省力化和提昇顯像處理的均勻性。而 且，也可利用事先實驗求得形成在基板S的圖案尺寸之分 佈和搬送速度V21、搬送速度V41之關係，以此作爲資料 表，事先保存在控制部60。並且，控制部60也可使用該 資料表，自動的進行搬送速度V21、搬送速度V41的再設 定。 在上述實施形態中，雖是說明使用FPD用的玻璃基板 之情形，但不限於玻璃基板，使用樹脂基板和半導體基板 的情形也適用本發明。 【圖式簡單說明】 第1圖是槪略表示利用本發明之實施形態的塗佈顯像 處理系統的俯視圖。 第2圖是表示設置在第1圖的塗佈顯像處理系統之利 用本發明之實施形態的顯像裝置之圖。 第3圖是說明第2圖之顯像裝置的動作之圖。 第4圖是緊接於第3圖用來說明第2圖之顯像裝置之 動作的另一個圖。 第5圖是緊接於第4圖用來說明第2圖之顯像裝置之 動作的另一個圖。 第6圖是緊接於第5圖用來說明第2圖之顯像裝置之 動作的又另一個圖。 第7圖是說明基板前端之顯像液狀態的圖。 -26- 201243906 第8圖是說明基板後端之顯像液狀態的圖 【主要元件符號說明】 100 :塗佈顯像處理系統 1 :晶匣站 2 :處理站 4 :界面站 9 :曝光裝置 3 0 :顯像元件 30A :導入部 3 0B :顯像液供給部 30C :顯像部 30D :吹風部 30E :洗滌部 5 0 :顯像液供給噴嘴 5 1 :前噴嘴 5 2 :預洗滌噴嘴 5 3 :洗滌噴嘴 60 :控制部 170 :滾子When the conveyance speed of the substrate S is shown, the conveyance speed V21 (Fig. 3) when the developer liquid is supplied from the developer supply nozzle 30 to the substrate S in the development liquid supply unit 30B can be, for example, 60 mm/sec. In the range of 100 mm/sec, in the blowing portion 30D, when the substrate S passes the conveying speed V4 1 (Fig. 6) when the air curtain of the blowing nozzle 51 is used, for example, a drawing of 120 mm/sec to 180 mm/sec can be performed. . Of course, after performing the above-described development method using at least one substrate S -20-201243906, the transport speeds V21 and V3 are determined according to the in-plane uniformity of the formed resist pattern (the size of the line width and the aperture, etc.). V41, etc. are preferred. Further, the in-plane uniformity of the resist pattern may be measured, for example, in the inspection unit 35 of the rear stage of the developing unit 30. Further, in the middle of processing a batch of substrates, the inspection unit 35 (using another inspection device) changes (or adjusts) the conveyance speeds V21, V31, V41, and the like based on the measurement data acquired in time series. As described above, in the developing unit 30 and the developing method of the present embodiment, in the blowing unit 30D, in order to recover the developing liquid, the front end of the substrate S is lifted up, and the developing liquid flows to the developing liquid. Rear side. Therefore, the rear end side of the substrate S is exposed to a large amount of the developing liquid, and since the developing liquid is stirred by the flow of the developing liquid, the development on the rear end side is promoted. However, since the conveying speed V41 of the blowing unit 30D is slightly faster than the conveying speed V2 1 of the developing liquid supply unit 30B, the development time can be shortened at the rear end side of the substrate S (the developing liquid is supplied to the developing nozzle by the developing liquid) After the supply of 50, the time until the developing liquid is blown off by the air curtain from the air blowing nozzle 51 can cancel the promotion of development. Therefore, according to the embodiment of the present invention, it is possible to provide an effect and an advantage that the in-plane uniformity of the photoresist pattern of the substrate S is not lost. In addition, the developing unit 30 of the present embodiment can independently control the substrate transport speed when the supply of the developer liquid DL is supplied to the substrate S and the substrate transport when the substrate S covered by the supplied developing liquid DL is transported. Since the speed and the substrate transport speed when the developing liquid DL is removed from the substrate S, the substrate transfer speed can be variously changed by using the photoresist and the developing liquid, and the photoresist pattern in the plane of the substrate can be achieved. Homogenization. -21 - 201243906 It is assumed that the substrate transport speed cannot be controlled as described above. When the substrate transport speed is determined only by the development time, the substrate transport speed when the developer liquid is supplied cannot be adjusted. On the other hand, if the substrate transport speed at the time of supplying the developing liquid is adjusted, and the substrate transport speed is adjusted, it is necessary to change the length of the developing unit 30C (the transport distance of the substrate) to secure the development time. However, it is practically impossible to change the device configuration every time. That is, with the developing unit 30 of the present embodiment, the process window (remaining white) can be enlarged. This contributes to the performance improvement of the PFD and the low price of the PFD with improved yield. In addition, the possibility of using new photoresists and developing liquids developed in the future can be improved, and the retrofit of the devices carried therewith can be saved. The present invention has been described with reference to the embodiments of the present invention. However, the present invention is not limited to the embodiments described above, and various modifications and changes may be made in accordance with the scope of the appended claims. For example, after the front end of the substrate S reaches the blow nozzle 5 1 (Fig. 2), the conveyance speed of the blower portion 30D can be gradually increased. Specifically, after the leading end of the upper substrate S reaches the blow nozzle 51, the motor M4 and M5 and the roller 170 are controlled by the control unit 60 to gradually accelerate the transport speed of the substrate S. In this manner, the development time on the end side of the substrate S can be shortened slightly longer than the development time on the front end side. Therefore, it is possible to more reliably cancel the promotion of development on the end side after the substrate S. Further, in the above-described embodiment, the front end of the substrate S is detected to be directly below the developing liquid supply nozzle 50 by the predetermined sensor, and the developing liquid DL is supplied from the developing liquid supply nozzle 50 to the substrate S. , but not limited to -22- 201243906. For example, a sensor for detecting the front end of the substrate may be provided according to a predetermined position of the introduction portion 30 A (for example, a middle of the length of the substrate S in the transport direction), and the front end of the substrate S and the substrate are detected by the sensor. The transport speed of S determines the timing at which DL is discharged from the developing liquid supply nozzle 50 when the front end of the substrate S reaches directly below the display nozzle 50. Even if the clean air is discharged from the air blowing nozzle 51, for example, the sensor at the front end of the detecting substrate S is placed at a predetermined position of the air blowing portion, the same decision can be made. Further, in the developing unit 30 of the present embodiment, the substrate S is tilted and developed by the arrangement of the rollers 1 70 at 30D, and the blasting portion 30D can be used, for example, after the substrate S is stopped. The developing liquid on the substrate S is allowed to flow down from the rear end side. Further, the present invention is used in the case where the substrate is not inclined (the developing liquid is not recovered). For example, when the developing liquid is supplied to the substrate in this case, the transport speed of the substrate is very slow, and the developing liquid is mixed at the front end side of the substrate, so that the development is promoted on the front end side. In this case, the substrate transport speed when the developing nozzle blows the developing liquid is slightly slower than the substrate transporting speed at the time of liquid supply, thereby increasing the developing time at the rear end of the substrate. Thereby, the in-plane uniformity of the photoresist pattern can be maintained by the long-term development of the development time and the development of the rear end side. In this case, the delivery speed when the developing solution is blown off by the blowing nozzle can be gradually slowed down. Next, the conveyance speed V21, the conveyance speed V41, the speed V21, and the conveyance speed V41 are described as the blow-up liquid at the point 30D when the application image is supplied along the plate S at the time of the image supply liquid. When the needle is dropped, etc., the flow or the agitation will be utilized to give the real side of the image side. The operator (worker) of the transport system 100 -23- 201243906 decides that the operator inputs it from the input unit (not shown). The transport speed V31 is used for the distance between the development processing (distance of the developer liquid supply nozzle 50 to the pre-wash nozzle 52) and the development processing time (determined in advance), the transport speed V2 1 , and the transport speed V41. The control unit 60 calculates the transport speed V31. Here, if the transport speed V21 is too slow, there may be a problem. For example, in the case where the conveying speed V21 is too slow (for example, 1 to 20 mm/sec), as shown in Fig. 7, the developing liquid will stay at the end of the substrate due to the surface long force, and the development processing of this portion will be The processing of the other parts goes further, and the development processing on the substrate S is very uneven. Conversely, if the transport speed V2 1 is too fast, there may be a problem. For example, when the transport speed V21 is too fast (for example, 400 mm/sec or more), the developing liquid cannot be filled on the entire surface of the substrate S, and a part of the substrate SI may be partially absent. In this case, The development process on the substrate S is also very uneven. In these cases, the conveyance speed V21 is such that the developer liquid is filled on the entire surface of the substrate S, and can be set at a speed as fast as possible. Next, the development processing of the substrate on the downstream side (near the blowing nozzle 51) of the blowing portion 30D will be described. As shown in Fig. 8, in the field of the end of the substrate S in the direction in which the substrate S is formed, the flow of the developing liquid is caused by the deformation of the substrate S. Also, in the field, the amount of liquid in the developing solution is more than in other fields. With these main factors, the field of image processing has a slightly advanced situation than other fields. In this way, in the plane of the substrate S, the main factors of various development processing unevenness -24 - 201243906 can be considered. Further, in the plane of the substrate S, the transport speed V2 1 and the transport speed V41 are set so that the development processing becomes uniform. For example, when the development process is completed and the pattern formed on the substrate S is measured by a measuring unit (not shown), the pattern size of the front field F in the direction in which the substrate S is advanced is smaller than the desired size. In this case, the image processing of the field F will be ahead of the others. Therefore, the feedback resistance is generated at the transport speed V2 1 and the transport speed V41 before the development of the next substrate S is started. In this case, the transport speed V2 1 and the transport speed V4 1 are set to the transport speed 乂2 1 > transport speed V41. If it is set as described above, it is possible to perform uniform processing from the development processing of the next substrate S. Next, the description will be made on the opposite of the above. For example, when the development process is completed and the pattern formed on the substrate S is measured by a measuring unit (not shown), the pattern size of the rear field 进行 in the progress direction of the substrate S is thinner than the desired size. In this case, the field image processing will be ahead of other fields. Therefore, a feedback resistance is generated at the conveyance speed V21 and the conveyance speed V4 1 before the development processing of the next substrate S is started. In this case, the transport speed V21 and the transport speed V41 are reset to the transport speed V21 < transport speed V4 1 . If it is set as described above, uniform processing can be performed from the image processing of the next substrate S. In addition, in the above-described embodiment, after the development process is completed, the operator (operator) performs measurement of the pattern size formed on the substrate S, and resets the transport speed V21 and the transport speed V4 1 , but can form The measurement unit is coupled to the coating development system 1 〇〇, and after the development process is completed, the measurement unit automatically measures the pattern size, and based on the measurement result, the control unit-25-201243906 60 automatically resets the transfer speed V21. The structure of the transport speed V41. If this is the case, it is more labor-saving and improves the uniformity of the development processing. In addition, the relationship between the distribution of the pattern size formed on the substrate S, the transport speed V21, and the transport speed V41 can be determined by a prior experiment, and is stored in the control unit 60 as a data table in advance. Further, the control unit 60 can automatically reset the transport speed V21 and the transport speed V41 using the data table. In the above embodiment, the case of using a glass substrate for FPD is described. However, the present invention is also applicable to a case where a resin substrate and a semiconductor substrate are used without being limited to a glass substrate. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a plan view schematically showing a coating development processing system according to an embodiment of the present invention. Fig. 2 is a view showing a developing device which is provided in the coating development processing system of Fig. 1 and which is an embodiment of the present invention. Fig. 3 is a view for explaining the operation of the developing device of Fig. 2. Fig. 4 is a view similar to Fig. 3 for explaining the operation of the developing device of Fig. 2. Fig. 5 is a view similar to Fig. 4 for explaining the operation of the developing device of Fig. 2. Fig. 6 is still another view for explaining the operation of the developing device of Fig. 2 immediately after Fig. 5. Fig. 7 is a view for explaining the state of the developing liquid at the front end of the substrate. -26- 201243906 Figure 8 is a diagram illustrating the state of the developing liquid at the rear end of the substrate. [Main component symbol description] 100: Coating development processing system 1: Crystal station 2: Processing station 4: Interface station 9: Exposure device 3 0 : developing element 30A : introducing unit 3 0B : developing liquid supply unit 30C : developing unit 30D : blowing unit 30E : washing unit 5 0 : developing liquid supply nozzle 5 1 : front nozzle 5 2 : pre-washing nozzle 5 3 : Washing nozzle 60: Control unit 170: Roller
Ml〜M5 :驅動裝置（馬達） S :基板 -27-Ml~M5: drive unit (motor) S: base plate -27-