TWI391794B - Substrate processing apparatus - Google Patents

Description

Substrate processing device

The present invention relates to a substrate processing apparatus for applying heat treatment to a substrate to be processed in a photolithography process.

In the manufacture of an FPD (flat panel display), after forming a predetermined film on the glass substrate of the substrate to be processed, a photoresist (hereinafter referred to as a resist) of the treatment liquid is applied to form a resist film; The circuit pattern is exposed to the resist film, which is called exposure processing, that is, the circuit pattern is formed by a so-called photolithography process.

In the photolithography process, a plurality of heat treatments are performed, that is, pre-baking treatment, after forming a resist film on the glass substrate, heating the coating film to remove unnecessary solvent, etc.; after exposure treatment, exposure After the treatment, the chemical change of the resist film to be exposed is promoted; after the post-baking treatment, the fixing of the developing pattern and the drying of the substrate are performed simultaneously.

In the past, in the apparatus for performing such heat treatment, a heating device comprising a heating plate for mounting a glass substrate, a lifting mechanism for lifting the glass substrate on the heating plate, and a chamber for The inside contains a heating plate. Further, the substrate that has been subjected to the heat treatment is transported to a cooling device including a cooling plate as needed, and is cooled.

However, in such a heating device and a cooling device, since a transport robot for feeding a substrate is required, the cost is high. Further, it takes time to feed the substrate, and after feeding into the heating (cooling) device, it is necessary to support the substrate by the support pin, and the substrate is preheated without warping, which causes a problem that the throughput is lowered.

In order to solve such a problem, Patent Document 1 discloses a substrate processing apparatus that performs heating of a substrate by arranging a plurality of heaters at predetermined intervals along a conveyance path while conveying the substrate in the horizontal direction.

Further, in the substrate processing apparatus disclosed in Patent Document 1, the heater provided under the substrate is a hot plate heater, but in recent years, an infrared lamp has been proposed as an infrared lamp. The structure used by the heater. According to the infrared lamp, high heating efficiency can be obtained by absorbing the far infrared rays from the glass substrate.

Such a structure is, for example, as shown in the schematic cross-sectional view of FIG. 12, and has a structure in which the substrate G on the transport roller 201 is transported horizontally, and the substrate G is provided by a plurality of infrared lamps 202 disposed along the transport path. Heat from below. Further, in order to improve the heating efficiency of the top surface of the substrate G, a top plate 203 made of, for example, SUS (stainless steel) is usually provided as a reflecting plate above the conveying path.

[Patent Document 1] Japanese Patent Laid-Open Publication No. 2007-19340

However, in the structure shown in Fig. 12, when the substrate is fed, as shown in Fig. 13 (a), the reflection line from the top plate 203 is directly irradiated to the top surface of the substrate at the front end portion of the substrate; when the substrate is fed, as shown in Fig. 13 (b) As shown, the reflected line from the top plate 203 is directly incident on the top surface of the substrate at the trailing end of the substrate. Therefore, the temperature rise reaction of the substrate fluctuates and the temperature distribution is uneven, which adversely affects pattern formation.

The present invention has been made in view of the above circumstances, and an object of the invention is to provide a substrate processing apparatus for applying heat treatment to a substrate to be processed which is transported horizontally, by controlling heat of reflection from the top plate provided above the substrate transport path. The temperature distribution of the substrate can be made uniform.

In order to solve the above problems, a substrate processing apparatus according to the present invention is a substrate processing apparatus that performs heat treatment on a substrate to be processed, and includes a transport path that transports the substrate in a horizontal direction and a ceiling portion. Above the conveying passage, the conveying passage is arranged in parallel; the infrared lamp radiates heat from a lower side of the substrate conveyed through the conveying passage to heat the substrate; and the light guide plate transmits heat radiation from the infrared lamp Guided in a certain direction; the radiant heat from the infrared lamp is illuminated by the light guide plate along the vertical direction for the substrate being transported through the transport path.

In this way, by setting the light guide plate, the infrared light is applied to the ceiling portion. The hot rays of the shot are all directed upwards.

Therefore, when the substrate is fed or the substrate is fed out, the heat of reflection from the ceiling portion and the top surface of the substrate at the tip end portion and the end portion of the substrate is greatly reduced, and the temperature of the substrate is increased by heating and heating. The distribution is evenized.

Further, the ceiling portion is preferably formed of a predetermined metal material and the bottom surface is treated with a black oxide aluminum-treated top plate.

As described above, by applying the black oxide aluminum treatment to the bottom surface of the top plate, the reflection of the radiant heat can be suppressed, and the redundant heat radiation to the top surface of the substrate at the front end portion and the rear end portion of the substrate can be reduced.

Alternatively, the ceiling portion is preferably composed of a top plate formed of a predetermined metal material, and a top plate side light guide plate disposed close to the bottom surface of the top plate to reflect the heat radiation from the infrared lamp. Guided in the vertical direction.

In the case of the above configuration, the heat radiated from the light guide plate on the infrared lamp side in the vertical direction is reflected in the vertical direction by the top plate side light guide plate and the top plate.

Therefore, when the substrate is fed or the substrate is fed out, the heat of reflection from the top plate and the top surface of the substrate at the front end portion and the end portion of the substrate is greatly reduced.

Or the ceiling portion is formed by a top plate formed of a predetermined metal material, and a plurality of rib portions are formed on the bottom surface of the top plate along a substrate conveying direction, and the rib portion extends along a width direction of the substrate to be processed to be processed. It is provided that the cross section in the substrate transport direction is a tapered protrusion downward. Further, it is preferred that the surface of the rib is treated with black aluminum oxide.

Further, it is preferable that the top plate has a plurality of exhaust ports formed, and the ambient gas below the top plate is discharged from the exhaust port.

According to the above configuration, the heat radiation of the infrared lamp guided by the light guide plate vertically upward is greatly reduced when it is radiated to the top plate.

Therefore, when the substrate is fed or the substrate is fed out, the heat of reflection from the top plate and the top surface of the substrate at the tip end portion and the end portion of the substrate is greatly reduced.

Moreover, by providing an exhaust port on the top plate, the high-temperature ambient gas remaining under the top plate or the sublimate material from the substrate is discharged, thereby preventing the substrate from being heated poorly. influences.

Alternatively, the ceiling portion is preferably composed of a top plate formed of a predetermined metal material, and a top plate side infrared lamp disposed below the top plate from above the substrate conveyed through the conveying path The substrate is heated by heat radiation, and the top side light guide plate is disposed below the top plate side infrared lamp, and the heat radiation from the top plate side infrared lamp is guided vertically downward.

According to the above configuration, the heat radiation from the infrared lamp disposed under the substrate is not reflected to the top plate by the top-side infrared lamp above the substrate, and the heat radiation from the top-side infrared lamp is The top side light guide is guided vertically downward.

Therefore, even when the substrate is fed or the substrate is fed out, uniform heat irradiation is formed on the top surface of the substrate at the front end portion and the rear end portion of the substrate.

Further, in order to solve the above problems, the substrate processing apparatus of the present invention is a substrate processing apparatus that applies heat treatment to a substrate to be processed. The method comprises: a conveying passage, the substrate is conveyed in a vertical direction and conveyed in a horizontal direction; a ceiling portion is disposed above the conveying passage and disposed in parallel in the conveying passage; and the infrared lamp is transported through the conveying passage The bottom of the substrate is heated upward to heat the substrate, and the ceiling portion is formed of a top plate formed of a predetermined metal material. On the bottom surface of the top plate, a concave curved surface is formed along a longitudinal direction of the rod-shaped infrared lamp. The infrared lamp is provided at a focus position of the concave curved surface.

In this way, since the infrared lamp is provided at the focus position of the concave curved surface, when the heat radiation from the infrared lamp hits the concave curved surface, the reflected heat can be all directed toward the infrared lamp.

Therefore, when the substrate is fed or the substrate is fed out, the heat of reflection from the ceiling portion and the top surface of the substrate at the tip end portion and the end portion of the substrate is greatly reduced, and the temperature rise of the substrate can be made uniform. .

According to the present invention, a substrate processing apparatus can be provided which applies heat treatment to a substrate to be processed which is transported horizontally, and can control the temperature distribution of the substrate by controlling the heat of reflection from the top plate disposed above the substrate transport path. Chemical.

[Best Mode for Carrying Out the Invention]

Hereinafter, embodiments of the present invention will be described with reference to the drawings. 1 is a plan view of a coating and developing treatment system including a substrate processing apparatus of the present invention.

The coating and developing treatment system 10 is disposed in a clean room, for example, a glass substrate for a liquid crystal display (LCD) is used as a substrate to be processed, and is used in an LCD process to perform cleaning and etching in a photolithography step. A series of treatments such as coating, prebaking, developing and post-baking. The exposure process is performed adjacent to the exposure device 12 disposed outside of the system.

In the coating and developing treatment system 10, a horizontally long processing station (P/S) 16 is disposed at the center portion, and a cassette station (C/S) 14 and an interface station are disposed at both end portions in the longitudinal direction (X direction). /F) 18 both.

The cassette station (C/S) 14 is a feeding/receiving port for the cassette C for accommodating a plurality of substrates G in a plurality of stages, and includes a cassette platform 20 which is arranged in parallel in one horizontal direction (Y direction) and can be loaded. Four sets are placed; and the transport mechanism 22 transfers the substrate G to the cassette C on the cassette platform 20. The transport mechanism 22 includes a mechanism that can hold the substrate G, for example, the transport arm 22a, and can operate on four axes of X, Y, Z, and θ, and deliver the substrate G to an adjacent processing station (P/S) 16.

The processing station (P/S) 16 is a pair of parallel and reversed pairs of lines A and B extending in the longitudinal direction (X direction) of the horizontal system, and the processing units are arranged in the order of the processing flow or the steps.

More specifically, the cleaning processing unit 24, the first heat treatment unit 26, and the coating processing unit are disposed on the processing line A from the side of the cassette station (C/S) 14 toward the upstream side of the interface station (I/F) 18 side. 28. The second heat treatment unit 30 is arranged in a line. Here, the cleaning processing unit 24 sequentially provides an excimer UV irradiation unit (e-UV) 34 and a scrub cleaning unit (SCR) 36 from the upstream side along the transport path 32 that moves in parallel. The first heat treatment portion 26 is provided with an attachment unit (AD) 40 and a cooling unit (COL) 42 in this order from the upstream side along the transport path 32 that moves in parallel.

Further, on the downstream side of the first heat treatment portion 26, the coating processing portion 28 and the second heat treatment portion 30 are provided along the transport path 32 that moves in parallel. The coating treatment unit 28 includes a resist A coating unit (CT) 44 and a reduced pressure drying unit (VD) 46. The second heat treatment unit 30 is provided with a prebaking unit (PREBAKE) 50 and a cooling unit (COL) 52 in this order from the upstream side.

On the other hand, on the processing line B from the interface station (I/F) 18 side toward the downstream side of the cassette station (C/S) 14 side, a developing unit (DEV) 54, an i-line UV irradiation unit (i-UV) 56. The post-baking unit (POBAKE) 58, the cooling unit (COL) 60, and the inspection unit (AP) 62 are arranged in a row.

The units 54, 56, 58, 60, 62 are arranged in this order from the upstream side along the conveying path 33 which moves in parallel. Further, the post-baking unit (POBAKE) 58 and the cooling unit (COL) 60 constitute a third heat treatment unit 59.

Further, an auxiliary transport space 66 is provided between the two processing lines A and B, and the shuttle mechanism 68 that horizontally mounts the substrate G on a unit of one sheet can be processed in the processing direction (X direction) by a drive mechanism (not shown). ) moves in both directions.

In addition, the interface station (I/F) 18 includes: a transport device 70 for performing transport between the transport channels of the parallel movement of the two processing lines A, B and the substrate G; and a transport device 72 for performing adjacent exposure devices Delivery between 12 and substrate G. And around it, there is a buffer. Platform (BUF) 74, extended. Cooling platform (EXT.COL) 76, and peripheral device 78.

buffer. A fixed buffer cassette (not shown) is placed on the platform (BUF) 74. extend. The cooling stage (EXT.COL) 76 is a platform for substrate transfer having a cooling function, and is used when the substrate G is transferred between the two transport devices 70 and 72. The peripheral device 78 can employ, for example, a structure in which both a print exposure machine (TITLER) and an edge exposure device (EE) are vertically overlapped. Each of the transport devices 70, 72 has transport arms 70a, 72a that can hold the substrate G, and in order to deliver the substrate G, adjacent portions can be accessed.

FIG. 2 shows the order in which one substrate G is processed in the coating and developing treatment system 10. First, in the cassette station (C/S) 14, the transport mechanism 22 takes out one substrate G from any one of the cassettes C on the stage 20, and takes the taken-out substrate G upside down (to make the substrate to be processed) The surface is fed to the start point of the transport path 32 of the parallel movement of the processing line A side of the processing station (P/S) 16 (step S1 of Fig. 2).

In this state, the substrate G is transported to the downstream side of the processing line A in the upwardly inclined conveying path 32. In the cleaning processing unit 24 of the initial stage, the substrate G is divided by the standard The sub UV irradiation unit (e-UV) 34 and the scrub cleaning unit (SCR) 36 sequentially perform an ultraviolet cleaning process and a brush cleaning process (steps S2 and S3).

In the scrubbing cleaning unit (SCR) 36, brush cleaning or air blowing cleaning is applied to the substrate G moving on the parallel moving conveying path 32, whereby the granular dirt is removed from the substrate surface. Then, a rinsing treatment is applied, and finally the substrate G is dried using an air knife or the like. When the series of cleaning processes of one of the scrubbing cleaning unit (SCR) 36 is completed, the substrate G travels downstream of the parallel-moving transport path 32 in this state, and passes through the first heat treatment portion 26.

In the first heat treatment unit 26, when the substrate G is fed into the adhesion unit (AD) 40, the dehydration baking treatment is first performed to remove the moisture. Next, an adhesion treatment using vaporous hexamethyldisilazane (HMDS, Hexamethyldisilazane) is applied to the substrate G to hydrophobize the surface to be treated (step S4). After the adhesion process is completed, the substrate G is cooled to a predetermined substrate temperature by the cooling unit (COL) 42 (step S5). Thereafter, the substrate G is transported through the transport path 32 that moves in parallel, and is transferred to the coating processing unit 28.

In the coating processing unit 28, while the substrate G is transported through the parallel-moving transport path 32, the top surface of the substrate is initially applied to the resist coating unit (CT) 44 using, for example, a slit nozzle. The treatment surface is coated with a resist liquid, and then dried under reduced pressure in a reduced-pressure drying unit (VD) 46 adjacent to the downstream side (step S6).

Then, the substrate G is transported through the transport path 32 that moves in parallel, and passes through the second heat treatment unit 30. In the second heat treatment unit 30, the substrate G is first prebaked in a prebaking unit (PREBAKE) 50 as a heat treatment after the resist coating or a heat treatment before the exposure (step S7). By this prebaking, the solvent remaining in the resist film on the substrate G is evaporated and removed, and the adhesion of the resist film to the substrate is also enhanced. As for the pre-baking unit 50, in order to optimize the substrate processing apparatus of the present invention, the structure will be described in detail later.

Next, the substrate G is cooled to a predetermined substrate temperature by the cooling unit (COL) 52 (step S8). Then, the substrate G is retracted from the end point (sending portion) of the parallel-moving conveying path 32 to the conveying device 70 of the interface station (I/F) 18.

In the interface station (I/F) 18, the substrate G extends from the substrate. The cooling platform (EXT.COL) 76 is fed to the edge exposure device (EE) of the peripheral device 78, where the peripheral portion of the substrate G is used for The exposure of the resist attached to the peripheral portion is removed at the time of development, and then sent to the adjacent exposure device 12 (step S9).

In the exposure device 12, the resist on the substrate G is exposed to a predetermined circuit pattern. Thereafter, when the substrate G that has finished the pattern exposure is returned from the exposure device 12 to the interface station (I/F) 18, the printing exposure machine (TITLER) of the peripheral device 78 is first fed, and the predetermined position on the substrate is imprinted. Information (step S10).

Then, the substrate G returns to the extension. Cooling platform (EXT.COL) 76. The substrate G delivery of the interface station (I/F) 18 and the transfer of the substrate G between the exposure device 12 are performed by the transport devices 70, 72. Finally, the substrate G is fed by the transport device 72 to the starting point (feeding portion) of the parallel-moving transport path 33 which is laid on the processing line B side of the processing station (P/S) 16.

As a result, the substrate G is conveyed through the parallel movement path 33 toward the downstream side of the processing line B in this upward posture.

In the first developing unit (DEV) 54, the substrate G is subjected to parallel development and processing, and a series of development processes of development, rinsing, and drying are performed (step S11).

The substrate G which is subjected to a series of development processes at the developing unit (DEV) 54 is placed in the parallel moving transport path 33 in this state, and passes through the i-line UV irradiation unit (i-UV) 56 adjacent to the downstream side. This is performed by i-ray irradiation as a decoloring process (step S12). Thereafter, the substrate G is still placed on the transport path 33 that moves in parallel, and in this state, the third heat treatment portion 59 and the inspection unit (AP) 62 are sequentially passed.

In the third heat treatment unit 59, the substrate G is first post-baked in a post-baking unit (POBAKE) 58 as a heat treatment after the development processing (step S13). By this post-baking, the developer or the cleaning liquid remaining in the resist film on the substrate G is evaporated and removed, and the adhesion of the resist pattern to the substrate is also enhanced.

Next, the substrate G is cooled to a predetermined substrate temperature by the cooling unit (COL) 60 (step S14). In the inspection unit (AP) 62, non-contact line width inspection and film quality are performed on the resist pattern on the substrate G. The film thickness is checked or the like (step S15).

Then, on the side of the cassette station (C/S) 14, the transport mechanism 22 picks up the substrate G from all the steps of the coating and development processing from the end point (delivery portion) of the parallel-moving transport path 33, and takes the received The substrate G is stored in any one (usually the original) cassette C (back to the step S1).

In the coating and developing treatment system 10, as described above, the present invention can be applied to the prebaking unit (PREBAKE) 50 of the second heat treatment unit 30.

The structure of this pre-baking unit 50 will be described. Fig. 3 is a schematic cross-sectional view showing a main part of a prebaking unit 50 according to a first embodiment of the substrate processing apparatus of the present invention.

As shown in Fig. 3, the pre-baking unit 50 is provided with a plurality of infrared lamps 1 along a parallel moving conveying path 32 constituted by a plurality of conveying rollers 7. Specifically, the infrared lamp 1 is a rod heater provided in parallel with the transport roller 7, and is formed by a space formed between adjacent transport rollers 7 and with heat radiation directed upward. Further, a reflection member 2 made of SUS is provided below each of the infrared lamps 1 so that the radiation heat of the infrared lamp 1 is radiated upward.

Further, above the transport path 32 which is parallelly moved (the ceiling portion 17), a top plate 3 having a bottom surface treated with black oxide aluminum is provided. The top plate 3 is formed of a predetermined metal material such as SUS (stainless steel). In this way, by applying black oxide aluminum treatment on the bottom surface of the top plate 3, the reflection of the radiant heat is suppressed, and the redundant heat radiation to the top surface of the substrate at the front end and the rear end portion of the substrate G is reduced. .

Further, a light guide plate 4 is provided above the plurality of infrared lamps 1 provided along the substrate transport direction for guiding the heat radiation from the infrared lamp 1 in a certain direction. Specifically, the light guide plate 4 emits heat from the infrared lamp 1 and is emitted vertically upward in the substrate transport direction. The light guide plate 4 is formed by processing, for example, an aluminum plate. By the light guide plate 4, since the heat radiation from the infrared lamp 1 and irradiated to the top plate 3 can be all guided in the vertical direction, the reflection heat can be reduced to the top surface of the substrate at the front end portion and the rear end portion of the substrate.

Therefore, as shown in FIG. 3, according to the first embodiment of the present invention, when the substrate G is fed or when the substrate G is fed, the top plate 3 is irradiated onto the top surface of the substrate at the front end portion and the rear end portion of the substrate G. The heat of reflection is greatly reduced, and the temperature distribution of the entire substrate formed by heating and heating of the substrate G is uniformized.

Next, a second embodiment of the substrate processing apparatus of the present invention will be described. Figure 4 is tied to A schematic cross-sectional view of a main part of the prebaking unit 50 of the second embodiment of the substrate processing apparatus of the present invention. In the pre-baking unit 50 of the first embodiment of the substrate processing apparatus of the present invention, the same components are denoted by the same reference numerals, and detailed description thereof will be omitted.

The structure of the prebaking unit 50 shown in Fig. 4 is different from that of the structure shown in Fig. 3, and the structure of the ceiling portion 17 is different. That is, the structure of Fig. 4 is provided with a top plate 5 and a light guide plate 6 (top plate side light guide plate) instead of the top plate 3 shown in Fig. 3. The top plate 5 is made of a predetermined metal material (for example, SUS (stainless steel)); the light guide plate 6 is formed in the same manner as the light guide plate 4 by processing, for example, an aluminum plate. Further, the top surface of the light guide plate 6 is in a state of being connected to the bottom surface of the top plate 5.

According to this configuration, the radiant heat of the infrared lamp 1 radiated vertically upward by the light guide plate 4 is reflected vertically downward by the light guide plate 6 and the top plate 5.

Therefore, as shown in FIG. 4, according to the second embodiment of the present invention, when the substrate G is fed or when the substrate G is fed, the top plate 5 is irradiated onto the top surface of the substrate at the front end portion and the rear end portion of the substrate G. The heat of reflection is greatly reduced, and the temperature distribution of the entire substrate formed by heating and heating of the substrate G is uniformized.

Next, a third embodiment of the substrate processing apparatus of the present invention will be described with reference to Figs. 5(a) and 5(b). Fig. 5 (a) is a schematic cross-sectional view showing a main part of a prebaking unit 50 according to a third embodiment of the substrate processing apparatus to which the present invention is applicable. Figure 5 (b) is a perspective view of the top plate of Figure 5 (a). 5(a) and 5(b), the same structural members are denoted by the same reference numerals as the pre-baking unit 50 of the first embodiment of the substrate processing apparatus of the present invention shown in FIG. The detailed description is omitted.

The structure of the prebaking unit 50 shown in Figs. 5(a) and 5(b) is different from the structure shown in Fig. 3, and the structure of the ceiling portion 17 is different. That is, the structure of Figs. 5(a) and 5(b) is provided with a top plate 8 instead of the top plate 3 shown in Fig. 3. As shown in Fig. 5(b), a plurality of ribs 8a are formed along the substrate conveying direction on the bottom surface of the top plate 8 made of a predetermined metal material (for example, SUS (stainless steel)), and the ribs 8a are conveyed along the bottom. The substrate G is extended in the width direction, and the cross section in the substrate transport direction is a tapered protrusion downward. Further, black oxide aluminum processing is applied to the surface of the rib portion 8a. That is, when heat radiation comes from below the top plate 8, its heat reflection is greatly attenuated.

According to this configuration, the heat radiation of the infrared lamp 1 guided upward by the light guide plate 4 is greatly attenuated when reflected to the top plate 8.

Therefore, as shown in FIG. 5, according to the third embodiment of the present invention, when the substrate G is fed or when the substrate G is fed, the top surface of the substrate is irradiated from the top plate 8 to the top surface of the substrate G and the end portion. The heat of reflection is greatly reduced, and the temperature distribution of the entire substrate formed by heating and heating of the substrate G is uniformized.

Next, a fourth embodiment of the substrate processing apparatus of the present invention will be described. Fig. 6 is a schematic cross-sectional view showing a main part of a prebaking unit 50 according to a fourth embodiment of the substrate processing apparatus to which the present invention is applicable. In the pre-baking unit 50 of the first embodiment of the substrate processing apparatus of the present invention, the same components are denoted by the same reference numerals, and detailed description thereof will be omitted.

The structure of the prebaking unit 50 shown in Fig. 6 is obtained by partially modifying the top plate 8 shown in Figs. 5(a) and 5(b). That is, instead of the top plate 8 shown in Figs. 5(a) and 5(b), the prebaking unit 50 shown in Fig. 6 is provided with a top plate 9 which is also formed of a predetermined metal material such as SUS (stainless steel).

In the top plate 9, a plurality of protrusions 9a formed in the same manner as the top plate 8 shown in Figs. 5(a) and 5(b) are formed on the bottom surface. However, the bottom surface of the top plate 9 formed at a plurality of equal intervals in the projections 9a forms an exhaust port 9b for discharging the ambient gas above the substrate, and the exhaust ports 9b communicate with the exhaust passage 9c formed in the top plate 9. Further, the exhaust passage 9c is connected to an intake mechanism (not shown).

That is, in the structure shown in Fig. 6, the generated retained heat can be efficiently radiated by the plurality of protrusions 9a processed by the black oxygen aluminum.

Therefore, as shown in Fig. 6, according to the fourth embodiment of the present invention, in addition to the effects similar to those of the third embodiment shown in Figs. 5(a) and 5(b), the bottom plate 9 can be retained on the bottom surface of the top plate 9. The high-temperature ambient gas and the sublimate from the substrate G are discharged to prevent adverse effects on the heating of the substrate.

Next, a fifth embodiment of the substrate processing apparatus of the present invention will be described. Fig. 7 is a schematic cross-sectional view showing a main part of a prebaking unit 50 according to a fifth embodiment of the substrate processing apparatus to which the present invention is applicable. Also, in Fig. 7, as shown in Fig. 3 as the present hair In the pre-baking unit 50 of the first embodiment of the substrate processing apparatus of the present invention, the same components are denoted by the same reference numerals, and detailed description thereof will be omitted.

The pre-baking unit 50 shown in Fig. 7 has a structure different from that of the structure shown in Fig. 3, and a structure not including the light guide plate 4 shown in Fig. 3 is formed.

In Fig. 7, the ceiling portion is provided with a top plate 11 instead of the top plate 3 shown in Fig. 3. The top plate 11 is formed of a predetermined metal material (for example, SUS (stainless steel)), and the concave curved surface 11a is formed along the longitudinal direction of each of the rod-shaped infrared lamps 1. Further, since the infrared lamp 1 is provided at the focus position of the concave curved surface 11a, when the heat radiation from the infrared lamp 1 hits the concave curved surface 11a, the reflected heat can all face the infrared lamp 1.

Therefore, as shown in FIG. 7, according to the fifth embodiment of the present invention, when the substrate G is fed or when the substrate G is fed, the top plate 11 is irradiated onto the top surface of the substrate at the front end portion and the rear end portion of the substrate G. The heat of reflection is greatly reduced, and the temperature distribution of the entire substrate formed by heating and heating of the substrate G is uniformized.

Next, a sixth embodiment of the substrate processing apparatus of the present invention will be described. Fig. 8 is a schematic cross-sectional view showing a main part of a prebaking unit 50 according to a sixth embodiment of the substrate processing apparatus to which the present invention is applicable. In the pre-baking unit 50 of the first embodiment of the substrate processing apparatus of the present invention, the same components are denoted by the same reference numerals, and detailed description thereof will be omitted.

The pre-baking unit 50 shown in Fig. 8 is provided between the top plate 5 and the light guide plate 6 (top plate side light guide plate) of the second embodiment shown in Fig. 4, and a plurality of infrared lamps 13 corresponding to the respective infrared lamps 1 are provided ( Roof side infrared light). Further, a reflection member 15 made of, for example, SUS (stainless steel) is provided above the lamp so that the heat radiation of the infrared lamp 13 is directed downward.

According to this configuration, the heat radiation from the infrared lamp 1 disposed under the substrate G is not reflected to the top plate 5 due to the infrared lamp 13 above the substrate G. Further, the heat radiation from the infrared lamp 13 is guided vertically downward by the light guide plate 6.

Therefore, as shown in Fig. 8, according to the sixth embodiment of the present invention, even when the substrate G is fed or the substrate G is fed out, uniform heat is formed on the top surface of the substrate at the front end portion and the rear end portion of the substrate G. Since the irradiation is performed, the temperature distribution of the entire substrate formed by heating and heating the substrate G is made uniform.

Further, in the first to sixth embodiments of the present invention, a pre-baking unit 50 which is a preferred embodiment of the substrate processing apparatus of the present invention is exemplified; however, the present invention is not limited thereto and can be applied to Other means for performing heat treatment, for example, can be applied to the post-baking unit 58 and the like.

Further, the substrate to be processed of the present invention is not limited to an LCD substrate (glass substrate), and may be various substrates for a flat panel display, a semiconductor wafer, a CD board, a photomask, a printed circuit board, or the like.

[Examples]

Next, the substrate processing apparatus of the present invention will be further described based on the embodiments. In the present embodiment, the substrate processing apparatus according to the configuration shown in the above embodiment was used to verify the effect by actually conducting an experiment.

[Example 1]

In the first embodiment, black oxide aluminum processing was applied to the bottom surface of a top plate formed of SUS (stainless steel), and the glass substrate of the substrate to be processed was subjected to heat treatment to measure the temperature distribution of the heat-treated substrate.

The graph of Figure 9 shows the results of the assay. In Fig. 9, the area indicated by the symbol A1 is around 111 ° C; the area indicated by A2 is near 114 ° C; the area indicated by the symbol A3 is around 105 to 108 ° C; and the area indicated by A4 is around 117 ° C.

[Example 2]

In Example 2, a light guide plate was disposed under the top plate used in Example 1, and the glass substrate of the substrate to be processed was subjected to heat treatment to measure the temperature distribution of the heat-treated substrate.

The graph of Figure 10 shows the results of the assay. In Fig. 10, the area indicated by the symbol A1 is around 111 ° C; the area indicated by the symbol A2 is around 114 ° C; and the area indicated by the symbol A3 is around 105 to 108 ° C.

[Comparative Example 1]

In Comparative Example 1, the glass substrate of the substrate to be processed was subjected to heat treatment in accordance with a conventional structure in which a top plate formed of SUS (stainless steel) was used, and the temperature distribution of the heat-treated substrate was measured.

The graph of Figure 11 shows the results of the assay. In Fig. 11, the area indicated by the symbol A1 is 111. Near °C; the area indicated by symbol A2 is near 114°C; the area indicated by symbol A3 is near 105~108°C; the area indicated by symbol A4 is around 117°C; the area indicated by A5 is around 120°C; the area indicated by symbol A6 is 123 ° C; the area indicated by the symbol A7 is 126 ° C; the area indicated by the symbol A8 is 129 ° C.

In the conventional structure shown in the results of the above examples and the results of Comparative Example 1, the distribution of the substrate temperature was largely uneven, particularly in the substrate leading end side and the trailing end side in the substrate transport direction.

On the other hand, in Example 1 in which the top plate was subjected to the treatment of black oxide aluminum, the substrate temperature distribution was greatly improved as compared with Comparative Example 1. Further, in the second embodiment in which the light guide plate was added to the structure of the first embodiment, the uniformity of the substrate temperature distribution was further greatly improved.

Therefore, according to the substrate processing apparatus of the present invention, it has been confirmed that the temperature distribution uniformity of the substrate after the heat treatment can be greatly improved.

[Industry Utilization]

The present invention can be applied to a substrate processing apparatus, and heat treatment is applied to an LCD substrate or the like, and can be suitably used in the semiconductor manufacturing industry, the electronic component manufacturing industry, and the like.

1‧‧‧Infrared light

2‧‧‧reflecting members

3, 5, 8, 9, 11‧‧‧ top board

4‧‧‧Light guide plate

6‧‧‧Light guide plate (top plate side light guide plate)

7‧‧‧Transport roller

8a‧‧‧ ribs

9a‧‧‧ Protrusion

9b‧‧‧Exhaust port

9c‧‧‧Exhaust passage

10‧‧‧ Coating development system

11a‧‧‧ concave surface

12‧‧‧Exposure device

13‧‧‧Infrared light (top side infrared light)

14‧‧‧匣箱站(C/S)

15‧‧‧reflecting members

16‧‧‧Processing Station (P/S)

17‧‧‧ Ceiling Department

18‧‧‧Interface Station (I/F)

20‧‧‧Box Platform

22‧‧‧Transportation agencies

22a‧‧‧Transport arm

24‧‧‧Washing and Processing Department

26‧‧‧First Heat Treatment Department

28‧‧‧ Coating Processing Department

30‧‧‧2nd Heat Treatment Department

32, 33‧‧‧ parallel transport channels (transport channels)

34‧‧‧Excimer UV irradiation unit (e-UV)

36‧‧‧Scratch Cleaning Unit (SCR)

40‧‧‧ Attachment unit (AD)

42‧‧‧Cooling unit (COL)

44‧‧‧Resist Coating Unit (CT)

46‧‧‧Decompression Drying Unit (VD)

50‧‧‧Pre-baking unit (PREBAKE), substrate processing unit

52‧‧‧Cooling unit (COL)

54‧‧‧Development unit (DEV)

56‧‧‧i line UV irradiation unit (i-UV) (i-line irradiation unit)

58‧‧‧post-baking unit (POBAKE)

59‧‧‧3rd Heat Treatment Department

60‧‧‧Cooling unit (COL)

62‧‧‧Check unit (AP)

66‧‧‧Auxiliary conveying space

68‧‧‧ shuttle mechanism

70, 72‧‧‧ delivery device

70a, 72a‧‧‧ transport arm

74‧‧‧ buffering. Platform (BUF)

76‧‧‧Extension. Cooling platform (EXT.COL)

78‧‧‧ Peripheral devices

201‧‧‧Transport roller

202‧‧‧Infrared light

203‧‧‧ top board

A, B‧‧‧ processing line

C‧‧‧匣 box

G‧‧‧Substrate (glass substrate)

1 is a plan view of a coating and developing treatment system including a substrate processing apparatus of the present invention.

2 is a flow chart showing the substrate processing flow of the coating development processing system of FIG. 1.

Fig. 3 is a schematic cross-sectional view showing the configuration of a main part of the prebaking unit of the first embodiment of the substrate processing apparatus of the present invention.

Fig. 4 is a schematic cross-sectional view showing the configuration of a main part of a prebaking unit according to a second embodiment of the substrate processing apparatus of the present invention.

5(a) and 5(b) are schematic cross-sectional views showing the configuration of a main part of the prebaking unit of the third embodiment of the substrate processing apparatus of the present invention.

Fig. 6 is a schematic cross-sectional view showing the configuration of a main part of a prebaking unit according to a fourth embodiment of the substrate processing apparatus of the present invention.

Figure 7 is a view showing the prebaking of the fifth embodiment of the substrate processing apparatus of the present invention; A schematic cross-sectional view of the structure of the main part of the unit.

Fig. 8 is a schematic cross-sectional view showing the configuration of a main part of a prebaking unit according to a sixth embodiment of the substrate processing apparatus of the present invention.

Fig. 9 is a graph showing the results of Example 1.

Fig. 10 is a graph showing the results of Example 2.

Fig. 11 is a graph showing the results of Comparative Example 1.

Fig. 12 is a schematic cross-sectional view showing a main part of a conventional substrate processing apparatus which is subjected to heat treatment on a substrate.

13(a) and 13(b) are explanatory views for explaining the problem of the structure shown in Fig. 12.

1‧‧‧Infrared light

2‧‧‧reflecting members

3‧‧‧ top board

4‧‧‧Light guide plate

7‧‧‧Transport roller

17‧‧‧ Ceiling Department

32‧‧‧Transportation channel

50‧‧‧Prebaking unit (substrate processing unit)

G‧‧‧Substrate (glass substrate)

Claims (7)

A substrate processing apparatus for applying heat treatment to a substrate to be processed; characterized in that it comprises: a conveying passage for conveying the substrate in a vertical direction; and a ceiling portion located above the conveying passage, parallel to the conveying passage Providing an infrared lamp that radiates heat from a lower side of the substrate that is transported through the transport path to heat the substrate; and a light guide plate that guides a direction of heat radiation from the infrared lamp in a certain direction; The radiant heat of the infrared lamp is irradiated to the substrate conveyed through the transport path by the light guide plate being vertically upward. The substrate processing apparatus according to claim 1, wherein the ceiling portion is formed of a predetermined metal material, and the bottom surface is treated with a black oxide aluminum top plate. The substrate processing apparatus of claim 1, wherein the ceiling portion is composed of: a top plate formed of a predetermined metal material; and a top plate side light guide plate disposed close to a bottom surface of the top plate, from which the infrared ray is The reflection of the heat radiation from the lamp is directed downwards. The substrate processing apparatus of claim 1, wherein the ceiling portion is formed of a top plate formed of a predetermined metal material; and a plurality of ribs are formed on a bottom surface of the top plate along a substrate conveying direction, the rib portions are conveyed along the substrate The substrate to be processed is extended in the width direction, and the cross section in the substrate transport direction is tapered downward, and the surface of the rib is subjected to black oxide aluminum processing. The substrate processing apparatus of claim 4, wherein a plurality of exhaust ports are formed in the top plate, and ambient gas under the top plate is discharged from the exhaust port. The substrate processing apparatus of claim 1, wherein the ceiling portion is composed of a top plate formed of a predetermined metal material, and a top plate side infrared lamp disposed under the top plate and transported through the transport. Radiation is radiated downward from the upper side of the substrate of the channel to heat the substrate; and a top side light guide plate is disposed on the top side of the infrared plate Below the lamp, the heat radiation from the infrared light from the top plate is guided vertically downward. A substrate processing apparatus for applying heat treatment to a substrate to be processed; characterized in that it comprises: a conveying passage for conveying the substrate in a vertical direction; and a ceiling portion located above the conveying passage, parallel to the conveying Provided by the channel; the infrared lamp radiates heat from a lower side of the substrate conveyed through the conveying path, and heats the substrate; the ceiling portion is formed by a top plate formed of a predetermined metal material, on the bottom surface of the top plate The long-side direction of the rod-shaped infrared lamp forms a concave curved surface, and the infrared lamp is disposed at a focus position of the concave curved surface.