JP5048810B2 - Heat treatment apparatus and heat treatment method - Google Patents

Description

  The present invention relates to a heat treatment apparatus and a heat treatment method for performing heat treatment on a substrate to be processed while the substrate to be processed is flown and conveyed.

For example, in manufacturing an FPD (flat panel display), a circuit pattern is formed by a so-called photolithography process.
Specifically, after a predetermined film is formed on a substrate to be processed such as a glass substrate, a photoresist (hereinafter referred to as a resist) as a processing liquid is applied to form a resist film, which corresponds to the circuit pattern. The resist film is exposed to light and developed.

By the way, in recent years, in this photolithography process, for the purpose of improving throughput, each process such as resist coating, drying, heating, and cooling is performed on the surface to be processed while the substrate to be processed is conveyed in a substantially horizontal posture. Many configurations are used.
For example, in a heat treatment apparatus that heats a substrate and performs drying of a resist film or drying after development processing, as disclosed in Patent Document 1, the substrate is disposed along a conveyance path while being conveyed in a horizontal direction. A configuration in which heat treatment is performed by a heated heater has become widespread.
In the heat treatment apparatus having such a flat flow conveyance structure, it is possible to perform the heat treatment while continuously flowing a plurality of substrates on the conveyance path, so that an improvement in throughput can be expected.

Specifically, referring to FIGS. 12A to 12D, the illustrated heat treatment apparatus 60 includes a flat-flowing substrate transfer path 62 in which a plurality of transfer rollers 61 are rotatably laid, A chamber 65 for forming a heat treatment space is provided along the substrate transfer path 62. The chamber 65 is provided with a slit-shaped substrate carry-in port 65a and a substrate carry-out port 65b.
That is, the substrates G (G1, G2, G3,...) Transported through the substrate transport path 62 are continuously carried into the chamber 65 from the substrate carry-in port 65a, subjected to a predetermined heat treatment, and the substrate carry-out port. It is carried out from 65b.

In the chamber 65, preheating is performed on the substrate G (G1, G2, G3,...), And a preheater unit 63 that raises the temperature of the substrate G to a predetermined temperature, and main heating for maintaining the substrate temperature are performed. The main heater part 64 to perform is provided continuously.
The pre-heater unit 63 includes a lower heater 66 provided between the conveyance rollers 61 and an upper heater 67 provided on the ceiling, and the main heater unit 64 is a lower portion provided between the conveyance rollers 61. The heater 69 and the upper heater 70 provided in the ceiling part are provided.

In the heat treatment apparatus 60 configured as described above, the lower heater 66 and the upper heater 67 have a predetermined set temperature (for example, 160) in order to heat the substrate G to a predetermined temperature (for example, 100 ° C.) in the preheater unit 63. ° C).
On the other hand, in the main heater section 64, the lower heater 69 and the upper heater 70 are heated to a predetermined heat treatment temperature (for example, 100) in order to maintain the temperature of the substrate G heated in the preheater section 63 and efficiently perform the heat treatment. ° C).

12A to 12D, a plurality of substrates G (G1, G2, G3,...) Are continuously fed from the carry-in entrance 65a to the preheater unit 63 in units of lots. Then, each substrate G is heated to a predetermined temperature (for example, 100 ° C.).
Each substrate G whose temperature has been raised in the pre-heater unit 63 is subsequently transferred to the main heater unit 64, where the substrate temperature is maintained and a predetermined heat treatment (for example, a process for evaporating the solvent in the resist) is performed. It is continuously carried out from the outlet 65b.

JP 2007-158088 A

However, in the heat treatment apparatus having the flat flow conveying structure shown in FIGS. 12A to 12D, the substrate temperature after the preheating by the preheater unit 63 is the same as the front region and the rear region of the substrate G. Tended to be different in the central area.
Specifically, since the front region of the substrate G has no substrate surface (surface that absorbs and reflects radiant heat) that continues forward, it receives the radiant heat from the lower heater 66 and the upper heater 67 on both surfaces of the substrate G, and the central region. It was hotter than.
On the other hand, in the rear region of the substrate G, since there is no substrate surface (surface that absorbs and reflects radiant heat) that follows the radiant heat from the lower heater 66 and the upper heater 67, respectively, on both surfaces of the substrate. It was hotter than the central area.
For this reason, when a predetermined heat treatment is performed in the main heater unit 64 on the substrate G that has been heated by the preheater unit 63, there is a problem that the line width of the wiring pattern becomes non-uniform due to temperature variations in the substrate surface. there were.

  The present invention has been made in view of the above-described problems of the prior art, and in a heat treatment apparatus that performs heat treatment while flowing and transporting a substrate to be processed, suppressing variation in heat treatment temperature in the substrate surface, Provided are a heat treatment apparatus and a heat treatment method capable of making the line width of a wiring pattern in a substrate plane more uniform.

  In order to solve the above-described problems, a heat treatment apparatus according to the present invention is a heat treatment apparatus for performing a heat treatment on a substrate to be processed which is carried in a flat flow, wherein a substrate transfer path is formed, and the substrate to be processed is attached to the substrate. A substrate transfer means for carrying and carrying a flat flow along the transfer path, a first chamber for covering a predetermined section of the substrate transfer path and forming a heat treatment space for the substrate to be processed being transferred on the substrate transfer path; A first means capable of heating the inside of the first chamber; and a second means capable of locally cooling the substrate to be processed which is transported through the substrate transport path by blowing air cooled to a predetermined temperature. A substrate detecting means provided in a preceding stage of the first chamber, for detecting the substrate to be processed being transported through the substrate transport path, and a detection signal from the substrate detecting means being supplied, and the second means Cooling motion by Control means for performing on / off switching of the substrate, the control means acquires a transfer position of the substrate to be processed by a detection signal of the substrate detection means, and is divided into a plurality of substrates to be processed along the substrate transfer direction For each region, the cooling operation by the second means is switched on / off, and the temperature of the front region and the rear region of the substrate to be processed is changed to the central portion by the cooling operation of the second means. The temperature is lower than the temperature of the region, and the heat treatment is further performed by the first means.

  Alternatively, in order to solve the above-described problems, a heat treatment apparatus according to the present invention is a heat treatment apparatus that performs a heat treatment on a substrate to be processed to be flown flatly, and forms a substrate transfer path, and the substrate to be processed is formed. A substrate transfer means for carrying and flowing along the substrate transfer path; a first chamber for covering a predetermined section of the substrate transfer path and forming a heat treatment space for the substrate to be processed being transferred through the substrate transfer path; And a first means capable of heating the inside of the first chamber, and a heat source that can be moved up and down below the substrate to be processed that is transported through the substrate transport path, and bringing the heat source close to the substrate to be processed. A second means capable of locally heating the substrate to be processed; a substrate detecting means provided in a preceding stage of the first chamber; for detecting the substrate to be processed being transported through the substrate transport path; and the substrate. Detection of detection means And a control means for controlling the raising and lowering movement of the heat source of the second means, wherein the control means obtains the transport position of the substrate to be processed by the detection signal of the substrate detection means, For each region of the substrate to be processed divided into a plurality along the substrate conveyance direction, the movement of the heat source of the second means is controlled, and the substrate to be processed is heated by the second means, The temperature of the central region is higher than the temperatures of the front region and the rear region, and the heat treatment by the first means is further performed.

  Alternatively, in order to solve the above-described problems, a heat treatment apparatus according to the present invention is a heat treatment apparatus that performs a heat treatment on a substrate to be processed to be flown flatly, and forms a substrate transfer path, and the substrate to be processed is formed. A substrate transfer means for carrying and flowing along the substrate transfer path; a first chamber for covering a predetermined section of the substrate transfer path and forming a heat treatment space for the substrate to be processed being transferred through the substrate transfer path; The substrate to be processed is formed by forming forced convection above a first means capable of heating the inside of the first chamber and a heat source provided below the substrate to be processed that is transported through the substrate transport path. A second means capable of locally heating; a substrate detecting means provided in a preceding stage of the first chamber; for detecting the substrate to be processed being transported through the substrate transport path; and a detection signal of the substrate detecting means Is supplied And a control means for switching on / off the forced convection forming operation by the second means, wherein the control means obtains a transport position of the substrate to be processed by a detection signal of the substrate detection means, and transports the substrate. For each region of the substrate to be processed divided into a plurality along the direction, the forced convection forming operation by the second means is switched on / off, and the substrate to be processed is heated by the heating operation of the second means. The temperature of the central region is higher than the temperatures of the front region and the rear region, and the heat treatment by the first means is further performed.

In any of the above configurations, the substrate temperature of the front region and the rear region of the substrate to be processed is lower than the temperature of the central region at the start of the heat treatment in the first chamber. As a result, the necessary temperature increase width with respect to the target value of the substrate temperature after the heat treatment in the first chamber is larger in the front region and the rear region of the substrate than in the central region.
However, in the first chamber, in the substrate transported in the high temperature atmosphere, the amount of heat received by the front region and the rear region is larger than the amount of heat received by the central region. Therefore, the temperature of the substrate when the first chamber is carried out becomes substantially uniform in the surface as a result, temperature variations in the substrate surface are suppressed, and the line width of the wiring pattern can be made more uniform.

  Further, in order to solve the above-described problems, the heat treatment method according to the present invention includes a substrate to be processed in a first chamber heated to a predetermined temperature by transferring the substrate to be processed along a substrate transfer path. And a predetermined heat treatment for the substrate to be processed carried into the first chamber, wherein the substrate to be processed transported through the substrate transport path is transferred to the first chamber. A step of detecting before carrying in, and obtaining a transfer position of the substrate to be processed by detecting the substrate to be processed, and a predetermined temperature with respect to the front region and the rear region of the substrate to be processed divided along the substrate transfer direction Spraying the cooled air to make the temperature of the front region and the rear region lower than the temperature of the central region, and the substrate to be processed in the first chamber heated to the predetermined temperature. Against Characterized in that comprising the step of applying a heat treatment.

  Alternatively, in order to solve the above-described problem, the heat treatment method according to the present invention includes a substrate to be processed that is flown and transported along a substrate transport path and is heated to a predetermined temperature in the first chamber. And a predetermined heat treatment for the substrate to be processed carried into the first chamber, wherein the substrate to be processed transported through the substrate transport path is transferred to the first chamber. Detecting before carrying in and obtaining the transfer position of the substrate to be processed by detecting the substrate to be processed, provided to be movable up and down with respect to the central region of the substrate to be processed divided along the substrate transfer direction Moving the heated heat source closer to bring the temperature of the central region higher than the temperatures of the front region and the rear region, and the object to be processed in the first chamber heated to the predetermined temperature. substrate Characterized in that comprising the step of performing a predetermined heat treatment against.

  Alternatively, in order to solve the above-described problem, the heat treatment method according to the present invention includes a substrate to be processed that is flown and transported along a substrate transport path and is heated to a predetermined temperature in the first chamber. And a predetermined heat treatment for the substrate to be processed carried into the first chamber, wherein the substrate to be processed transported through the substrate transport path is transferred to the first chamber. A step of detecting before carrying in and a detection position of the substrate to be processed are obtained by a detection position of the substrate to be processed, and the substrate is provided below the central region of the substrate to be processed divided along the substrate transfer direction. Further heating by forming forced convection above the heat source, the temperature of the central region is higher than the temperature of the front region and the rear region, and the first heated to the predetermined temperature In the chamber With respect to the substrate to be processed it had characterized in that comprising the step of performing a predetermined heat treatment.

In any of the above methods, at the start of the heat treatment in the first chamber, the substrate temperature of the front region and the rear region of the substrate to be processed is lower than the temperature of the central region. As a result, the necessary temperature increase width with respect to the target value of the substrate temperature after the heat treatment in the first chamber is larger in the front region and the rear region of the substrate than in the central region.
However, in the first chamber, in the substrate transported in the high temperature atmosphere, the amount of heat received by the front region and the rear region is larger than the amount of heat received by the central region. Therefore, the temperature of the substrate when the first chamber is carried out becomes substantially uniform in the surface as a result, temperature variations in the substrate surface are suppressed, and the line width of the wiring pattern can be made more uniform.

  According to the present invention, in a heat treatment apparatus that performs heat treatment while flowing and transporting a substrate to be processed, variation in heat treatment temperature in the substrate surface can be suppressed, and the line width of the wiring pattern in the substrate surface can be made uniform. A heat treatment apparatus and a heat treatment method can be obtained.

FIG. 1 is a cross-sectional view showing an overall schematic configuration of a first embodiment according to the present invention. FIG. 2 is a plan view showing the overall schematic configuration of the first embodiment according to the present invention. FIG. 3 is a flow showing the flow of operation of the heat treatment apparatus of FIG. 4A to 4D are cross-sectional views for explaining the operation of the heat treatment apparatus corresponding to the flow of FIG. FIG. 5 is a cross-sectional view showing a partial schematic configuration of the second embodiment according to the present invention. FIG. 6 is a flow showing the flow of operation of the heat treatment apparatus of FIG. 7A to 7D are cross-sectional views for explaining the operation of the heat treatment apparatus corresponding to the flow of FIG. FIG. 8 is a cross-sectional view showing a partial schematic configuration as a modification of the second embodiment according to the present invention. FIG. 9 is a cross-sectional view showing a partial schematic configuration of another modification of the second embodiment according to the present invention. FIG. 10 is a cross-sectional view showing a partial schematic configuration as another modification of the second embodiment according to the present invention. FIG. 11 is a plan view showing a partial schematic configuration of the heat treatment apparatus of FIG. 12A to 12D are cross-sectional views for explaining the problems of the conventional heat treatment apparatus.

Hereinafter, an embodiment according to a heat treatment apparatus of the present invention will be described with reference to the drawings. In this embodiment, a case where the heat treatment apparatus is applied to a heat treatment unit that heat-treats a glass substrate (hereinafter referred to as a substrate G) that is a substrate to be treated will be described as an example.
Further, the front portion (region) of the substrate G used in the following description is, for example, a region from the front end of the substrate to about a quarter (500 mm if the total substrate length is 2000 mm) with respect to the total length of the substrate. The rear portion (region) is a region from the rear end of the substrate to about a quarter with respect to the entire length of the substrate. The central portion (region) of the substrate G is a region excluding the front portion and the rear portion of the substrate G.

FIG. 1 is a cross-sectional view showing an overall schematic configuration according to the first embodiment of the heat treatment unit 1, and FIG. 2 is a plan view (showing a cross section in the plane direction) of the heat treatment unit 1 of FIG.
As shown in FIGS. 1 and 2, the heat treatment unit 1 includes a substrate transport path 2 that transports a substrate G in the X direction by a plurality of rollers 20 laid rotatably. Along the substrate conveyance path 2, in order from the upstream side (toward the X direction), the substrate carry-in unit 3, the preheater unit 4 that performs preheating, the main heater unit 5 that performs main heating, and the substrate carry-out unit 6. And are arranged.

  As shown in FIG. 2, the substrate transport path 2 has a plurality of cylindrical rollers 20 (substrate transport means) extending in the Y direction, and the plurality of rollers 20 rotate at predetermined intervals in the X direction. Arranged to be possible. Further, the rollers 20 in the substrate carry-in unit 3, the rollers 20 in the preheater unit 4, and the rollers 20 in the main heater unit 5 are each provided with a drive system independently. Specifically, the plurality of rollers 20 in the substrate carry-in unit 3 are provided such that the rotation shaft 21 can be rotated by a belt 22a, and one rotation shaft 21 is connected to a roller driving device 10a such as a motor. .

In addition, the plurality of rollers 20 in the preheater unit 4 are provided such that the rotation shaft 21 can be rotated by a belt 22b, and one rotation shaft 21 is connected to a roller driving device 10b such as a motor.
The plurality of rollers 20 in the main heater unit 5 are provided so that the rotation of the rotation shaft 21 can be interlocked by a belt 22c, and one rotation shaft 21 is connected to a roller driving device 10c such as a motor.
Further, the plurality of rollers 20 in the substrate carry-out section 6 are provided such that the rotation shaft 21 can be rotated by a belt 22d, and one rotation shaft 21 is connected to a roller driving device 10d such as a motor.

  Each roller 20 is provided so that its peripheral surface is in contact with the entire width of the substrate G, and the outer peripheral surface portion is made of a material having a low thermal conductivity such as a resin so that the heat of the heated substrate G is not easily transmitted. , PEEK (polyetheretherketone). Further, the rotating shaft 21 of the roller 20 is formed of a material having high strength and low thermal conductivity such as aluminum, stainless steel, and ceramic.

  The heat treatment unit 1 includes a chamber 8 for forming a predetermined heat treatment space. The chamber 8 is formed in a thin box shape that covers the periphery of the substrate transfer path 2. In this chamber 8, preheating by the preheater unit 4 and main heating by the main heater unit 5 are performed on the substrate G to be roller-transferred. It is done continuously. In the present embodiment, the chamber 8 is formed continuously from the first chamber 8A that forms the heat treatment space of the preheater section 4 and the rear end of the first chamber 8A, and the heat treatment space of the main heater section 5 is formed. It shall consist of the 2nd chamber 8B to form.

As shown in FIG. 1, a slit-shaped inlet 51 extending in the Y direction is provided on the front side wall of the chamber 8. The substrate G on the substrate transport path 2 passes through the carry-in port 51 and is carried into the chamber 8.
A slit-shaped carry-out port 52 extending in the Y direction through which the substrate G on the substrate transfer path 2 can pass is provided on the rear side wall of the chamber 8. That is, the substrate G on the substrate transport path 2 passes through the carry-out port 52 and is unloaded from the chamber 8.

Further, the upper, lower, left and right wall portions of the chamber 8 have a double wall structure including an inner wall 12 and an outer wall 13 provided with a space therebetween, and a space 14 between the inner wall 12 and the outer wall 13 is It functions as an air insulation layer that insulates the inside and outside of the chamber 8. A heat insulating material 15 is provided on the inner side surface of the outer wall 13.
As shown in FIG. 2, in the chamber 8, a bearing 19 is provided on the side wall facing the Y direction (consisting of the inner wall 12 and the outer wall 13), and the bearing 19 supports the roller of the substrate transport path 2. 20 is rotatably supported by each.

As shown in FIG. 1, in the chamber 8, an exhaust port 25 is provided in the upper wall portion near the carry-in port 51, and an exhaust port 26 is provided in the lower wall portion. 32.
Further, an exhaust port 27 is provided in the upper wall portion near the carry-out port 52 of the chamber 8, and an exhaust port 28 is provided in the lower wall portion, which are connected to exhaust devices 33 and 34 having variable exhaust amounts, respectively.
That is, when the exhaust devices 31 to 34 are operated, the chamber 8 is exhausted through the exhaust ports 25 to 28, and the chamber temperature is further stabilized.

As shown in FIG. 1, the pre-heater unit 4 includes a plurality of lower planar heaters 17 and upper planar heaters 18 (first means) arranged in the chamber 8 along the substrate transport path 2. The lower planar heater 17 and the upper planar heater 18 are configured to generate heat when supplied with a drive current.
The lower planar heaters 17 are each formed of a strip-shaped plate, and each plate is laid between adjacent roller members 20 so as to heat the substrate G from below.
The upper planar heaters 18 are each formed of a strip-shaped plate, and are laid on the ceiling portion of the chamber 8 so as to heat the substrate G from above as shown in FIG.
A driving current is supplied to the lower planar heater 17 and the upper planar heater 18 by a heater power source 36, and the heater power source 36 is controlled by a control unit 40 (control means) including a computer.

  On the other hand, the main heater unit 5 includes a lower planar heater 23 and an upper planar heater 24 (third means) made of strip-shaped plates provided in the chamber 8 along the substrate transport path 2. Among these, the lower planar heater 23 is laid between adjacent roller members 20 to be heated from below the substrate G, and the upper planar heater 24 is formed on the ceiling portion of the chamber 8 to be heated from above the substrate G. It is laid. A driving current is supplied to the lower planar heater 23 and the upper planar heater 24 by a heater power supply 39, and the heater power supply 39 is controlled by a control unit 40.

In the heat treatment unit 1, a substrate detection sensor 45 (substrate detection means) for detecting the substrate G transported on the substrate transport path 2 is provided at a predetermined position of the substrate carry-in unit 3. A detection signal is output to the control unit 40.
The substrate detection sensor 45 is provided, for example, at a predetermined distance from the carry-in port 51 of the chamber 8 with a predetermined distance, and after a predetermined time (e.g., the tip) of the substrate G passes over the sensor, the substrate G is detected. Is carried into the chamber 8 (preheater unit 4) from the carry-in entrance 51.

Further, in the preheater unit 4, an air blow nozzle 41 (first cooling air) for blowing air (called cooling air), which is cooled as necessary, from below the substrate G to the lower surface of the substrate near the substrate carry-in port 51. Two means) are provided. The air blow nozzle 41 has a slit-like nozzle port 41a that is long along the substrate width direction. Uniform wind power and cooling air having a predetermined temperature (for example, 40 ° C.) can be blown from the nozzle port 41a to the lower surface of the substrate. It has been. Note that by blowing this cooling air to a predetermined region of the substrate G, high-speed temperature rise (such as other regions where the cooling air is not blown) is suppressed in the predetermined region.
The air blow nozzle 41 is connected to an air supply unit 42 (second means) including a pump that is an air supply source adjusted to be cooled to a predetermined temperature, and its drive control (on / off of cooling operation) is performed. Switching) is performed by the control unit 40.

More specifically, the cooling air is controlled to be blown out from the nozzle port 41 a only while the front region and the rear region of the substrate G carried into the preheater unit 4 pass over the nozzle 41.
Thereby, when the heating of the substrate G is started in the preheater unit 4, the cooling air is blown only to the front region and the rear region of the substrate G, and the front region and the rear region of the substrate G at the time of heating start. The substrate temperature is set lower than that in the central region.

  Further, in the central region of the main heater unit 5 in the chamber 8, a substrate temperature detection sensor 46 (substrate) that detects the substrate temperature in a non-contact manner by, for example, infrared irradiation with respect to the substrate G carried into the main heater unit 5. Temperature detection means) is provided, and the detection signal is output to the control unit 40. That is, the control unit 40 can acquire the temperature of the substrate G heated by the preheater unit 4 based on the output of the substrate temperature detection sensor 46.

  Next, the heat treatment step by the heat treatment unit 1 configured as described above will be further described with reference to FIGS. FIG. 3 is a flowchart showing a flow of operation control in the preheater unit 4 of the heat treatment unit 1, and FIG. 4 is a cross-sectional view showing a substrate transport state in the heat treatment unit 1.

  First, the temperature of the lower planar heater 17 and the upper planar heater 18 of the preheater unit 4 is set to a preheating temperature (for example, 160 ° C.) by supplying a drive current from the heater power source 36. Further, by supplying a drive current from the heater power supply 39, the temperature of the lower planar heater 23 and the upper planar heater 24 of the main heater unit 5 is maintained for maintaining the temperature of the substrate G heated in the preheater unit 4. The temperature is set (for example, 100 ° C.).

  By setting the heater temperature, the atmosphere in the chamber 8 is brought to a state in which the preheater unit 4 is higher than the main heater unit 5 by a predetermined temperature. That is, when the substrate G passes through the preheater section 4 that is in a high temperature (160 ° C.) atmosphere, the substrate temperature is raised to a predetermined heat treatment temperature (for example, 100 ° C.) and passes through the main heater section 5. During this time, the substrate temperature is maintained.

As described above, after the atmospheric temperature in the chamber 8 is adjusted before the substrate is carried in, the rollers 20 are driven by the roller driving devices 10a to 10d, and the substrate G as the substrate to be processed has a predetermined speed (for example, 50 mm / sec). Thus, the substrate is transported along the substrate transport path 2 of the substrate carry-in unit 3.
When the substrate G is detected by the substrate detection sensor 45 as shown in FIG. 4A (step S1 in FIG. 3), the substrate detection signal is supplied to the control unit 40.

The control unit 40 starts acquiring (detecting) the transfer position of the substrate G based on the substrate detection signal and the substrate transfer speed. Then, as shown in FIG. 4A, the control unit 40 drives the air supply unit 42 at the timing when the substrate G is carried into the preheater unit 4 from the carry-in port 51 of the chamber 8 (step S2 in FIG. 3). Then, cooling air of a predetermined temperature (for example, 40 ° C.) is ejected from the nozzle port 41a of the air blow nozzle 41 (step S3 in FIG. 3).
As a result, as shown in FIG. 4B, cooling air is blown to the lower surface of the substrate G carried into the preheater unit 4, and the front region of the substrate G is cooled to a predetermined temperature.
That is, in the front region of the substrate G, the high temperature rise is suppressed, and the heat treatment is started in the preheater unit 4 from a state where the substrate temperature is lower than the temperature when the central region of the substrate G is heated.

Further, the control unit 40 supplies air as shown in FIG. 4C at a timing when the central portion of the substrate G is carried into the pre-heater unit 4 and passes immediately above the air blow nozzle 41 (step S4 in FIG. 3). The drive of the part 42 is stopped and the air ejection from the air blow nozzle 41 is stopped (step S5 in FIG. 3).
That is, the heat treatment is started in the preheater unit 4 without cooling the central region of the substrate G (fast temperature rise is suppressed).

Further, the control unit 40 drives the air supply unit 42 at a timing when the rear region of the substrate G is carried into the pre-heater unit 4 and passes immediately above the air blow nozzle 41 (step S6 in FIG. 3), and the air blow nozzle 41 The cooling air starts to be ejected from the nozzle port 41a (step S7 in FIG. 3).
As a result, as shown in FIG. 4D, cooling air is blown to the lower surface of the rear portion of the substrate carried into the preheater portion 4, and the rear region of the substrate G is cooled.
That is, in the rear region of the substrate G, the rapid heating is suppressed, and the preheater unit 4 starts the heat treatment from a state where the substrate temperature is lower than the temperature when the central region of the substrate G is heated.

In addition, when the entire substrate G passes over the air blow nozzle 41 (step S8 in FIG. 3), the control unit 40 stops driving the air supply unit 42 and stops air ejection from the air blow nozzle 41 (FIG. 3). 3 step S9).
As described above, the substrate G transported through the preheater unit 4 is heated to a predetermined temperature (100 ° C.) while being blown by the air blow nozzle 41 at a predetermined timing, and is further transported to the main heater unit 5. A predetermined heat treatment is performed.
In steps S3 and S7, the temperature of the cooling air ejected from the air blow nozzle 41 is the temperature of the central region, front region, and rear region of the substrate G detected by the substrate temperature detection sensor 46 in the main heater unit 5. It is preferable to determine based on this.

As described above, according to the first embodiment of the present invention, at the start of the heat treatment in the preheater unit 4, the substrate temperature of the front region and the rear region of the substrate G is higher than the temperature of the central region. Is also low. As a result, the necessary temperature increase width with respect to the target value (100 ° C.) of the substrate temperature after the heat treatment in the preheater unit 4 is larger in the front region and the rear region of the substrate G than in the central region.
However, in the preheater unit 4, in the substrate G transported in a high temperature atmosphere at a predetermined temperature (160 ° C.), the amount of heat received by the front region and the rear region is larger than the amount of heat received by the central region. Therefore, the temperature of the board | substrate G at the time of being conveyed by the main heater part 5 becomes substantially in-plane uniform as a result, the temperature dispersion in a board | substrate surface is suppressed, and the line width of a wiring pattern can be made more uniform. .

In the first embodiment, the air blow nozzle 41 for blowing cooling air from below the substrate G to the lower surface of the substrate is provided near the substrate carry-in port 51 in the preheater section 4 (in the chamber 8). However, it is not limited to the configuration.
That is, before the heat treatment in the preheater unit 4 is completed, it is sufficient that the cooling air is blown to the front region and the rear region of the substrate G, and the substrate temperature in the region is lowered by a predetermined temperature. The nozzle 41 may be provided at a downstream position in the preheater unit 4.
Alternatively, the air blow nozzle 41 is provided in the vicinity of the substrate inlet 51 outside the preheater unit 4 (chamber 8), and cooling air is supplied to the front region and the rear region of the substrate G immediately before the substrate is loaded into the preheater unit 4. The temperature in the region may be decreased by a predetermined temperature (for example, 17 ° C.).

Subsequently, a second embodiment of the heat treatment apparatus according to the present invention will be described. In the second embodiment, the air blow nozzle 41 and the air supply unit 42 shown in the first embodiment described above are not provided. Instead, for example, as shown in FIG. The lower planar heater 17 (two lower planar heaters 17 in the figure) on the carry-in entrance 51 side has a function of moving up and down.
Specifically, as shown in FIG. 5, the two lower planar heaters 17 (heat sources) on the substrate carry-in entrance 51 side are supported from below by lift shafts 43 (second means), respectively. It is configured to move up and down by an elevating drive unit 44 (second means) comprising a ball screw mechanism or the like. The elevating drive unit 44 is controlled by the control unit 40.

The heat treatment process by the heat treatment unit 1 configured as described above will be further described with reference to FIGS. 6 is a flow showing the flow of operation control in the preheater unit 4 of the heat treatment unit 1, and FIG. 7 is a cross-sectional view showing a substrate transport state in the heat treatment unit 1. As shown in FIG.
First, the temperature of the lower planar heater 17 and the upper planar heater 18 of the preheater unit 4 is set to a preheating temperature (for example, 160 ° C.) by supplying a drive current from the heater power source 36. Further, by supplying a drive current from the heater power supply 39, the temperature of the lower planar heater 23 and the upper planar heater 24 of the main heater unit 5 is maintained for maintaining the temperature of the substrate G heated in the preheater unit 4. The temperature is set (for example, 100 ° C.).
By setting the heater temperature, the atmosphere in the chamber 8 is set to a state in which the preheater unit 4 is higher than the main heater unit 5 by a predetermined temperature, as in the first embodiment.

As described above, after the atmospheric temperature in the chamber 8 is adjusted before the substrate is carried in, the rollers 20 are driven by the roller driving devices 10a to 10d, and the substrate G as the substrate to be processed has a predetermined speed (for example, 50 mm / sec). Thus, the substrate is transported along the substrate transport path 2 of the substrate carry-in unit 3.
7A, when the substrate G is detected by the substrate detection sensor 45 (step St1 in FIG. 6), the substrate detection signal is supplied to the control unit 40.

The control unit 40 starts acquiring (detecting) the transfer position of the substrate G based on the substrate detection signal and the substrate transfer speed.
Then, at the timing when the substrate G is carried into the preheater unit 4 from the carry-in port 51 of the chamber 8 (step St2 in FIG. 6), the control unit 40, as shown in FIG. 7B, 2 on the carry-in port 51 side. The lift drive unit 44 is controlled so that the lower sheet heater 17 moves downward (step St3 in FIG. 6). That is, in the vicinity of the carry-in entrance 51, the lower planar heater 17 is moved away from the front region of the substrate G, and the amount of heat received by the front region is reduced.

  Further, at the timing when the central portion of the substrate G is carried into the pre-heater unit 4 (step St4 in FIG. 6), the control unit 40 has two lower surfaces on the carry-in entrance 51 side as shown in FIG. 7C. The elevating drive unit 44 is controlled so that the heater 17 moves upward (step St5 in FIG. 6). That is, in the vicinity of the carry-in entrance 51, the lower planar heater 17 is brought close to the central region of the substrate G, and the amount of heat received by the central region is made higher.

Further, at the timing when the rear region of the substrate G is carried into the preheater unit 4 (step St6 in FIG. 6), the control unit 40 has two lower surfaces on the carry-in entrance 51 side as shown in FIG. The elevating drive unit 44 is controlled so that the heater 17 moves downward (step St7 in FIG. 6). That is, in the vicinity of the carry-in entrance 51, the lower planar heater 17 is moved away from the rear region of the substrate G, and the amount of heat received by the rear region is reduced.
In steps St3, 5, and 7, the height of the lower planar heater 17 that moves up and down relative to the substrate G (that is, the amount of heat applied to the substrate G by the lower planar heater 17 that can be moved up and down) is the main level. It is preferable to determine the temperature based on the temperatures of the central region, the front region, and the rear region of the substrate G detected by the substrate temperature detection sensor 46 in the heater unit 5.

Thus, in the board | substrate G conveyed by the preheater part 4, the calorie | heat amount which the center part area | region of the board | substrate G receives in the vicinity of the board | substrate carrying-in entrance 51 is made higher than the calorie | heat amount which a front part area | region and a rear part area | region receive. That is, at the start of heating in the preheater unit 4, after the substrate temperature in the central region is higher than the temperatures in the front region and the rear region, preheating is performed and the entire substrate is heated to a predetermined temperature (100 C.).
Then, the substrate G heated to a predetermined temperature (100 ° C.) in the preheater unit 4 is further transferred to the main heater unit 5 and subjected to a predetermined heat treatment.

As described above, according to the second embodiment of the present invention, at the start of the heat treatment in the preheater unit 4, the central region of the substrate G has the substrate temperature of the front region and the rear region. It will be in a higher state. As a result, the necessary temperature increase width with respect to the target value (100 ° C.) of the substrate temperature after the heat treatment in the preheater unit 4 is larger in the front region and the rear region of the substrate G than in the central region.
However, in the preheater unit 4, in the substrate G transported in a high temperature atmosphere at a predetermined temperature (160 ° C.), the amount of heat received by the front region and the rear region is larger than the amount of heat received by the central region. Therefore, the temperature of the board | substrate G at the time of being conveyed by the main heater part 5 becomes substantially in-plane uniform as a result, the temperature dispersion in a board | substrate surface is suppressed, and the line width of a wiring pattern can be made more uniform. .

In the second embodiment, the two lower planar heaters 17 on the substrate carry-in entrance 51 side are moved up and down, but the number of lower planar heaters 17 that can be moved up and down is limited. is not. That is, before the heat treatment in the preheater unit 4 is finished, it is only necessary to apply a heat amount to the central region of the substrate G from the front region and the rear region, and to raise the substrate temperature in that region by a predetermined temperature.
For this reason, the number of the lower planar heaters 17 that can be moved up and down may be one or three, for example.
Alternatively, as shown in FIG. 8, all the lower planar heaters 17 of the preheater unit 4 may be configured to be movable up and down. In this case, while the substrate G is transported through the preheater unit 4, the lower planar heater 17 is moved away from the front region and the rear region of the substrate G, and the lower planar heater 17 is moved closer to the central region. By controlling so, the substrate temperature can be adjusted more finely.

In the second embodiment, the lower planar heater 17 is moved up and down so that the amount of heat given to the central region of the substrate G by the lower planar heater 17 is larger than that in the front and rear regions. However, it is good also as a structure which heats further with respect to the center part area | region of the board | substrate G by another structure.
For example, as shown in FIG. 9, in a configuration in which the lower planar heater 17 is fixed in height, an infrared lamp heater such as a carbon heater 47 (heat source) extending in the substrate width direction is provided on the substrate carry-in entrance 51 side. But you can. Specifically, a carbon heater 47 capable of radiating radiant heat upward (to the lower surface of the substrate G) is supported by a lifting shaft 48 (second means), and a lifting device 49 (first The structure which moves up and down by 2nd means) can be considered.

In this case, when the substrate G is carried in from the carry-in entrance 51, the carbon heater 47 is moved up and brought close to the lower surface of the substrate G only while the central region passes over the carbon heater 47, and only the central region is obtained. What is necessary is just to control to heat further.
Even with such a configuration, the amount of heat received by the central region of the substrate G is greater than the amount of heat received by the front region and the rear region at the start of the heat treatment in the preheater unit 4, so that the substrate G is transferred to the main heater unit 5. As a result, the temperature in the substrate surface can be made uniform when being carried in.
Note that the carbon heater 47 does not need to use a lifting shaft as described above, and may be configured to turn on / off its lighting according to the timing of heating.

Alternatively, as shown in FIGS. 10 and 11 (partially enlarged plan view), the substrate is placed on the upper surface of the lower planar heater 17 (two lower planar heaters 17 in the figure), which is a heat source on the substrate carry-in entrance 51 side. High temperature (for example, 160 ° C.) convection flowing in the direction opposite to the transport direction (X direction) may be forcibly formed. Specifically, for example, as shown in the drawing, a plurality of air ejection nozzles 53 (second means) are disposed in front of the lower planar heater 17 with the nozzle ports facing upward, and the lower planar heater 17 is disposed. A plurality of air suction nozzles 54 (second means) are disposed behind the nozzle ports with the nozzle ports facing upward.
The air ejection nozzle 53 is connected to an air supply unit 55 (second means) composed of a blower pump or the like, and the air suction nozzle 54 is connected to an air recovery unit 56 (second means) composed of a suction pump or the like. The air supply unit 55 and the air recovery unit 56 are driven and controlled by the control unit 40.

In such a configuration, when the substrate G is loaded from the carry-in port 51, the air supply unit 55 and the air collection unit 56 are only while the central region passes over the lower planar heater 17 on the carry-in port 51 side. Is driven, and high-temperature (160 ° C.) forced convection is formed on the upper surface of the lower planar heater 17.
As a result, in the central region of the substrate G, the amount of heat exchange increases, and the temperature of the central portion of the substrate is efficiently increased.
That is, even with such a configuration, the amount of heat received by the central region of the substrate G at the start of the heat treatment in the preheater unit 4 is higher than the amount of heat received by the front region and the rear region. As a result, the temperature in the substrate surface can be made uniform when being carried into the heater unit 5.

In the configuration shown in FIGS. 10 and 11, the air ejection nozzle 53 and the air suction nozzle 54 which are separate from the lower planar heater 17 are provided. Any configuration that can form forced convection is acceptable.
For example, a nozzle opening for air ejection and suction may be provided on the upper surface of the lower planar heater 17, and an air flow path may be formed in the heater 17.

In the first and second embodiments, the heat treatment apparatus according to the present invention is applied to the heat treatment unit 1 that heat-treats the substrate G to be processed. You may apply to the board | substrate cooling device which performs the cooling process with respect to G.
In that case, for example, a plate cooled by a Peltier element can be used as the cooling means.
In that case, as a conventional problem, it is conceivable that the temperatures of the front and rear regions of the substrate G are lower than the temperature of the central region.

Therefore, in the first embodiment, only the central region of the substrate G is cooled in advance, and the temperature is lower than the front region and the rear region of the substrate G, whereby heat treatment (cooling) in the substrate surface is performed. Variation in temperature can be suppressed.
In the second embodiment (except for the configuration for forming forced convection in FIGS. 10 and 11), only the front region and the rear region of the substrate G are heated in advance, and the central region of the substrate G By setting the temperature higher than that, it is possible to suppress variations in the heat treatment (cooling) temperature in the substrate surface.

  10 and 11, the forced convection is formed on the heat source. For example, the forced convection is formed above the cooling source, so that the substrate G is further locally cooled. It becomes the composition to do. Therefore, a forced convection is formed on the cooling source to cool only the central region of the substrate G in advance and lower temperature than the front region and the rear region of the substrate G. Can be suppressed.

1 Heat treatment unit (heat treatment equipment)
2 substrate transfer path 8 chamber 8A first chamber 8B second chamber 17 lower planar heater (first means, heat source)
18 Upper planar heater (first means)
20 Roller (substrate transport means)
40 Control unit (control means)
41 Air blow nozzle (second means)
43 Elevating shaft (second means)
44 Elevating drive unit (second means)
45 Substrate detection sensor (Substrate detection means)
47 Carbon heater (heat source)
48 Elevating shaft (second means)
49 Lifting device (second means)
53 Air ejection nozzle (second means)
54 Air suction nozzle (second means)
55 Air supply part (second means)
56 Air recovery unit (second means)
G substrate (substrate to be processed)

Claims (8)

A heat treatment apparatus for performing a heat treatment on a substrate to be transported in a flat flow,
A substrate transport unit that forms a substrate transport path, and transports the substrate to be processed in a flat flow along the substrate transport path, and covers the predetermined section of the substrate transport path and is transported through the substrate transport path. A first chamber for forming a heat treatment space for the substrate; a first means capable of heating the inside of the first chamber; and air cooled to a predetermined temperature with respect to the substrate to be processed being transported through the substrate transport path. , A second means capable of locally cooling, a substrate detection means provided in a preceding stage of the first chamber, for detecting the substrate to be processed being conveyed on the substrate conveyance path, and the substrate detection means And a control means for switching on / off the cooling operation by the second means,
The control means acquires the transfer position of the substrate to be processed by the detection signal of the substrate detection means, and performs the cooling operation by the second means for each area of the substrate to be processed divided into a plurality along the substrate transfer direction. Switch on / off,
The substrate to be processed is brought into a state in which the temperature of the front region and the rear region is lower than the temperature of the central region by the cooling operation of the second means, and the heat treatment by the first means is further performed. A heat treatment apparatus characterized by being made. A heat treatment apparatus for performing a heat treatment on a substrate to be transported in a flat flow,
A substrate transport unit that forms a substrate transport path, and transports the substrate to be processed in a flat flow along the substrate transport path, and covers the predetermined section of the substrate transport path and is transported through the substrate transport path. A first chamber that forms a heat treatment space for the substrate; a first means that can heat the inside of the first chamber; and a heat source that can be moved up and down below the substrate to be processed that is transported through the substrate transport path. And a second means capable of locally heating the substrate to be processed by bringing the heat source close to the substrate to be processed, and the substrate to be transported through the substrate transport path, provided in front of the first chamber. A substrate detection means for detecting a processing substrate; and a control means for supplying a detection signal of the substrate detection means and for controlling the raising and lowering movement of the heat source of the second means,
The control means acquires the transfer position of the substrate to be processed by the detection signal of the substrate detection means, and the second means has a heat source for each area of the substrate to be processed divided into a plurality along the substrate transfer direction. Control the up and down movement of
The substrate to be processed is brought into a state where the temperature of the central region is higher than the temperatures of the front region and the rear region by the heating operation of the second means, and further, the heat treatment by the first means is performed. A heat treatment apparatus characterized by being made. A heat treatment apparatus for performing a heat treatment on a substrate to be transported in a flat flow,
A substrate transport unit that forms a substrate transport path, and transports the substrate to be processed in a flat flow along the substrate transport path, and covers the predetermined section of the substrate transport path and is transported through the substrate transport path. A first chamber for forming a heat treatment space for the substrate; a first means capable of heating the inside of the first chamber; and a heat source provided below a substrate to be processed that is transported through the substrate transport path. A second means capable of locally heating the substrate to be processed by forming forced convection and a substrate to be processed which is provided in the front stage of the first chamber and is transported through the substrate transport path. A substrate detecting means; and a control means for switching on / off the forced convection forming operation by the second means while being supplied with a detection signal of the substrate detecting means,
The control means acquires the transport position of the substrate to be processed based on the detection signal of the substrate detection means, and the forced convection by the second means is performed for each region of the substrate to be processed divided into a plurality along the substrate transport direction. Switch on / off the forming operation,
The substrate to be processed is brought into a state where the temperature of the central region is higher than the temperatures of the front region and the rear region by the heating operation of the second means, and further, the heat treatment by the first means is performed. A heat treatment apparatus characterized by being made. A second stage that is provided downstream of the first chamber along the substrate transport path, covers a predetermined section of the substrate transport path, and forms a heat treatment space for the substrate to be processed transported through the substrate transport path. A chamber;
A third means capable of heating the second chamber;
Substrate temperature detecting means for detecting the temperatures of the front area, the central area and the rear area of the substrate to be processed conveyed in the second chamber, respectively, and supplying a detection signal to the control means,
The control unit compares the temperature of the front region, the temperature of the central region, and the temperature of the rear region of the substrate to be processed obtained from the substrate temperature detection unit, and based on the comparison result, the second region The heat treatment apparatus according to any one of claims 1 to 3, wherein an amount of heat given to each region of the substrate to be processed is determined by means. The substrate to be processed is flown and conveyed along the substrate conveyance path, and the substrate to be processed is loaded into the first chamber heated to a predetermined temperature, and the substrate to be processed loaded into the first chamber is transferred to the substrate to be processed. A heat treatment method for performing predetermined heat treatment,
Detecting a substrate to be processed that is transported through the substrate transport path before being carried into the first chamber;
Obtaining the transport position of the substrate to be processed by detecting the substrate to be processed, and blowing air cooled to a predetermined temperature to the front region and the rear region of the substrate to be processed divided along the substrate transport direction, The temperature of the front region and the rear region is lower than the temperature of the central region; and
Applying a predetermined heat treatment to the substrate to be processed in the first chamber heated to the predetermined temperature. The substrate to be processed is flown and conveyed along the substrate conveyance path, and the substrate to be processed is loaded into the first chamber heated to a predetermined temperature, and the substrate to be processed loaded into the first chamber is transferred to the substrate to be processed. A heat treatment method for performing predetermined heat treatment,
Detecting a substrate to be processed that is transported through the substrate transport path before being carried into the first chamber;
The transport position of the substrate to be processed is acquired by detecting the substrate to be processed, and the heat source provided so as to be moved up and down is moved closer to the central region of the substrate to be processed divided along the substrate transport direction. The step of setting the temperature of the central region higher than the temperatures of the front region and the rear region;
Applying a predetermined heat treatment to the substrate to be processed in the first chamber heated to the predetermined temperature. The substrate to be processed is flown and conveyed along the substrate conveyance path, and the substrate to be processed is loaded into the first chamber heated to a predetermined temperature, and the substrate to be processed loaded into the first chamber is transferred to the substrate to be processed. A heat treatment method for performing predetermined heat treatment,
Detecting a substrate to be processed that is transported through the substrate transport path before being carried into the first chamber;
The substrate transfer position is acquired by detecting the substrate to be processed, and forced convection is formed above the heat source provided below the substrate with respect to the central region of the substrate to be processed divided along the substrate transfer direction. Further heating, and the temperature of the central region is higher than the temperatures of the front region and the rear region,
Applying a predetermined heat treatment to the substrate to be processed in the first chamber heated to the predetermined temperature. A step of transporting the substrate to be processed while performing a predetermined heat treatment on the substrate to be processed in a second chamber provided downstream of the first chamber along the substrate transport path;
Detecting the temperatures of the front region, the central region, and the rear region of the substrate to be processed conveyed in the second chamber, respectively.
Comparing the temperature of the front region, the temperature of the central region, and the temperature of the rear region of the acquired substrate to be processed, and determining the amount of heat given to each region of the substrate to be processed based on the comparison result The heat treatment method according to claim 5, wherein the heat treatment method is performed.

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