JP2004296773A - Method and device for controlling temperature of substrate - Google Patents

Method and device for controlling temperature of substrate Download PDF

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Publication number
JP2004296773A
JP2004296773A JP2003087007A JP2003087007A JP2004296773A JP 2004296773 A JP2004296773 A JP 2004296773A JP 2003087007 A JP2003087007 A JP 2003087007A JP 2003087007 A JP2003087007 A JP 2003087007A JP 2004296773 A JP2004296773 A JP 2004296773A
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JP
Japan
Prior art keywords
substrate
temperature
gas
nozzle
management device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2003087007A
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Japanese (ja)
Inventor
Kazuo Watanabe
一生 渡辺
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dai Nippon Printing Co Ltd
Original Assignee
Dai Nippon Printing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dai Nippon Printing Co Ltd filed Critical Dai Nippon Printing Co Ltd
Priority to JP2003087007A priority Critical patent/JP2004296773A/en
Publication of JP2004296773A publication Critical patent/JP2004296773A/en
Pending legal-status Critical Current

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Abstract

<P>PROBLEM TO BE SOLVED: To provide a temperature controlling device for the substrate in a manufacturing line whose foot space is reduced without requiring need for holding the substrate for a prescribed length of time. <P>SOLUTION: A temperature controlling device 1 comprises a conveying means 3 for conveying a substrate 2, a nozzle 4 having a slit discharging outlet 4a arranged in the conveying path of the conveying means and extending in a direction for traversing the conveying path, a gas supplying means 5 for supplying gas to the nozzle, and a temperature controlling means 6 for controlling the temperature of the gas. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

【0001】
【発明の属する技術分野】
本発明は、基板の温度管理装置、特に基板を加熱又は冷却する装置に関する。
【0002】
【従来の技術】
半導体や液晶ディスプレイを製造する工程において、基板に塗布したレジスト膜中に残留する溶媒の蒸発、及びレジスト膜と基板との密着強度の向上などを目的に基板を加熱する工程、いわゆるベーキングと呼ばれる工程が数回行われている。ベーキング工程は、基板にレジストを塗布後で露光前に行うプリベークや、露光、現像後に行うポストベークなどがある。これらの工程では、基板に対して厳密な温度管理が必要なため、一般的に、ホットプレートを用いて基板を加熱することが知られている。また、加熱後の基板を次の処理工程に早く送ることを目的として、温度の高い基板を水冷したクーリングプレート上に静置して冷却することもある。
【0003】
【発明が解決しようとする課題】
しかしながら、基板の加熱や冷却にプレートを使用する場合、基板をロボットハンドなどの移送手段で一旦プレート上に静置し、基板が所定温度になるまで一定時間保持する必要があるので、スループットを低下させる原因の一つとなっている。また、基板を静置するプレートは基板の面積以上の面積が必要となるので、基板の大型化に伴いプレートが占有する面積の増加が問題となっている。
【0004】
そこで、本発明は、製造ラインにおける装置の占有面積が狭く、基板を所定時間保持する必要のない基板の温度管理装置を提供することを目的とする。
【0005】
【課題を解決するための手段】
以下、本発明について説明する。なお、本発明の理解を容易にするために添付図面の参照符号を括弧書きにて付記するが、それにより本発明が図示の形態に限定されるものではない。
【0006】
本発明の温度管理方法は、搬送中の基板(2)に対して、前記基板の搬送経路を横断する方向に亘って気体を吹き付けて、前記基板の温度を制御することにより、上述した課題を解決する。
【0007】
本発明の温度管理方法によれば、基板の搬送経路を横断する方向に亘って気体が吹き付けられるから、気体が吹き付けられる位置を基板が通過することにより、基板全面に亘って気体が吹き付けられる。そして、吹き付けられた気体と基板との間では熱交換が行なわれるから、基板の全面に亘って温度制御が実現される。しかも、基板の搬送経路に気体を噴出するノズルを設けるだけでよいから、製造ラインの面積が増加することがない。基板の搬送中に基板の温度制御が行なわれるから、製造ラインのスループットの低下を招くこともない。特に本発明の温度管理方法は、基板全体の温度を制御する必要がなく、基板表面のみを温度制御すればよい工程に適している。
【0008】
本発明の基板の温度管理装置(1)は、基板(2)を搬送する搬送手段(3)と、前記搬送手段の搬送経路に配置され、前記搬送経路を横断する方向に亘って気体を噴出可能なノズル(4、20…20)と、前記ノズルに気体を供給する気体供給手段(5)とを備えることにより上述した課題を解決する。
【0009】
本発明の温度管理装置によれば、上述した本発明の温度管理方法を実現できる。なお、ノズルに供給する気体は温度制御をしてもよいし、しなくてもよい。気体の温度制御をしない場合には、室温(常温)の気体が吹き付けられるから、加熱された基板を室温まで冷却することができる。また、ノズルは搬送経路を横断する方向に亘って均一に気体を吹き付け可能なものであってもよい。
【0010】
本発明の温度管理装置において、前記ノズルに供給される気体の温度を制御する温度制御手段(6)を備えてもよい。この場合、気体の温度制御により、基板の温度を任意の温度まで加熱又は冷却することができる。また、基板の正確な温度制御も容易となる。なお、温度制御手段は、気体供給手段からノズルまでの間の気体の温度を制御してもよいし、気体供給手段が保持している気体の温度を制御してもよいし、気体供給手段が取り込む気体の温度を制御してもよい。
【0011】
本発明の温度管理装置において、前記ノズルは、前記搬送経路を横断する方向にのびるスリット状の吐出口(4a)を有するノズル(4)であってもよい。この場合、スリット状の吐出口からは均一に気体が噴出され、搬送経路を横断する方向に亘って均一に温度制御がなされるから、基板の搬送速度、気体の流量等の温度管理装置の動作を調整すれば、基板の全面に亘って均一な温度制御が行なわれる。例えば、基板の搬送速度、気体の流量、気体の温度を一定とすることにより基板の全面に亘って均一な温度制御を実現してもよい。
【0012】
本発明の温度管理装置において、前記ノズルは、前記搬送経路を横断する方向に等間隔で配列された複数のノズル(20…20)であってもよい。この場合、配列された複数のノズルにより搬送経路を横断する方向に亘って均一に気体が吹き付けられ、当該方向に亘って均一に温度制御がなされるから、上述の好ましい態様と同様に、基板の搬送速度、気体の流量等の温度管理装置の動作を調整すれば、基板の全面に亘って均一な温度制御が行なわれる。
【0013】
本発明の温度管理装置において、前記搬送手段は、前記基板を一定速度で搬送し、前記気体供給手段は、前記気体を一定の流量で前記ノズルに供給し、前記温度制御装置は、前記気体の温度を一定温度に保つようにしてもよい。この場合、基板の各部において同一の時間で同一の温度変化が生じるから、基板の全面に亘って熱履歴が均一になる。従って、ポストベーク等の基板全面に亘って均一な熱履歴が要求される加熱工程の温度制御が容易に行なわれる。また、例えば輻射熱を用いた加熱方法のようにオーバーシュートするおそれもない。
【0014】
本発明の温度管理装置において、前記ノズルとして、前記吐出口を前記基板の一方の面に向けたノズルと、前記吐出口を前記基板の他方の面に向けたノズルとが設けられていてもよい。この場合、基板の両側から基板と気体との熱交換が行なわれるから、より迅速に基板の温度制御が行なわれる。
【0015】
【発明の実施の形態】
本発明の基板の温度管理装置1を図1に示す。温度管理装置1は、例えばフォトリソグラフィーにより基板にパターンを形成する製造ラインに設けられているる。温度管理装置1は、種々の加熱工程又は冷却工程に適用可能であり、例えば基板2のコーターへの搬送経路に設けられて基板を冷却するのに用いられてもよいし、コーターから露光装置への搬送経路に設けられてプリベークに用いられてもよいし、現像装置からの搬送経路に設けられてポストベークに用いられてもよい。
【0016】
温度管理装置1は、基板2を矢印Aの方向に搬送する搬送装置3と、矢印Aを横断する方向にのびるスリット状の吐出口4aをもつノズル4と、ノズル4に空気を供給する気体供給装置5と、気体供給装置5とノズル4との間に設置されて空気温度を制御する温度制御装置6とを備えている。
【0017】
搬送装置3は、例えば搬送ローラ7…7と、搬送ローラ7…7を回転駆動する電動モータ(不図示)とを含んで構成され、電動モータの回転速度を制御することにより、任意の速度で搬送ローラ7…7上の基板2を搬送可能である。吐出口4aは、基板2の全幅に亘る長さを有するとともに、基板2の全幅に亘って一定の幅で開口している。気体供給装置5は、例えばファン(不図示)と、ファンを回転駆動する電動モータ(不図示)とを含んで構成され、電動モータの回転速度を制御することにより、任意の流量で空気を送り込むことが可能である。温度制御装置6は、温度管理装置1が加熱用であれば、例えば電熱ヒータ(不図示)を含んで構成され、電熱ヒータの温度を調整することにより気体供給装置5からの空気を任意の温度まで昇温可能である。温度管理装置1が冷却用であれば、温度制御装置6は例えば熱交換器(不図示)を含んで構成され、熱交換器の温度を調整することにより気体供給装置5からの空気を任意の温度まで冷却可能である。
【0018】
次に、温度管理装置1の動作を説明する。
【0019】
基板2が搬送装置3上に載置されると、温度管理装置1は、気体供給装置5を駆動して一定の流量でノズル4に空気を供給するとともに、その空気を温度制御装置6により一定温度に調整する。また、温度管理装置1は、一定の角速度でローラ7…7を回転させ、基板2を矢印Aの方向に搬送する。このような温度管理装置1の動作により、基板2は、端部2aから吐出口4aの下を通過し、吐出口4aから噴出された熱風又は冷風8により端部2aから端部2bまで順次加熱又は冷却される。
【0020】
なお、搬送装置3による基板2の搬送速度、気体供給装置5により供給される空気の流量、温度制御装置6によって調整される空気の温度は、プリベーク、ポストベーク等の処理の種類、基板表面に成膜されているレジストの材質、基板の厚さ等の種々の条件に応じて適宜に設定してよい。例えば、毎秒10m以上の風速で吐出口4aから基板2の搬送経路に向かって熱風を噴出してもよい。
【0021】
本発明は上述した実施形態に限定されることなく、種々の形態にて実施してよい。
【0022】
ノズルの形状、数、配置は適宜に変更してよい。例えば、図2(a)に示すように、基板2の搬送経路を横断する方向に亘って複数のノズル20…20を等間隔で配置してもよい。また、図2(b)に示すようにスリット状の吐出口を有する複数のノズル4…4を基板2の搬送経路を横断する方向に並べてもよい。また、図3(a)に示すように、複数台のノズル4…4を基板の搬送方向に並べて配置し、基板2に熱風又は冷風8を吹き付けてもよい。図3(b)に示すように、搬送経路に対してノズル4を上下に配置し、基板2に対して上下方向から同時に熱風又は冷風8を吹き付けてもよい。
【0023】
搬送手段は、ローラコンベアに限定されるものではなく、基板2を搬送しつつ、基板2の表面に対して熱風又は冷風8の吹き付けが可能であれば、台車、ベルト等の各種手段を適用することができる。また、基板2の搬送状態も水平である必要はなく、基板2に熱風又は冷風8を吹き付けて加熱することができるのであれば種々の状態で搬送することができる。
【0024】
温度管理装置1により基板を冷却する場合、温度制御装置6を省略し、室温(常温)の空気を基板2に吹き付けることで、基板2を冷却してもよい。
【0025】
温度管理装置1の加熱部分は、室温やコンベアーの温度の影響を受けないように、断熱したチャンバーで囲まれていてもよい。また、ノズル4から吹き出した熱風はチャンバーから排気してもよいし、気体供給装置5に戻して循環させてもよい。
【0026】
【発明の効果】
以上に説明したように、本発明によれば、基板の搬送経路を横断する方向に亘って気体が吹き付けられるから、気体が吹き付けられる位置を基板が通過することにより、基板全面に亘って気体が吹き付けられる。そして、吹き付けられた気体と基板との間では熱交換が行なわれるから、基板の全面に亘って温度制御が実現される。しかも、基板の搬送経路に気体を噴出するノズルを設けるだけでよいから、製造ラインの面積が増加することがない。基板の搬送中に基板の温度制御が行なわれるから、製造ラインのスループットの低下を招くこともない。特に本発明の温度管理方法は、基板全体の温度を制御する必要がなく、基板表面のみを温度制御すればよい工程に適している。
【図面の簡単な説明】
【図1】本発明に係る基板の温度管理装置の一実施形態を示す図。
【図2】ノズルの変形例を示す図。
【図3】ノズルの配置場所の変形例を示す図。
【符号の説明】
1 温度管理装置
2 基板
3 搬送装置
4 ノズル
4a 吐出口
5 気体供給装置
6 温度制御装置
[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a substrate temperature management device, and more particularly to a device for heating or cooling a substrate.
[0002]
[Prior art]
In the process of manufacturing semiconductors and liquid crystal displays, a process of heating the substrate for the purpose of evaporating the solvent remaining in the resist film applied to the substrate and improving the adhesion strength between the resist film and the substrate, a process called so-called baking Has been done several times. The baking process includes pre-baking performed after applying a resist to a substrate and before exposure, and post-baking performed after exposure and development. In these steps, since strict temperature control is required for the substrate, it is generally known to heat the substrate using a hot plate. Further, in order to quickly send the heated substrate to the next processing step, the high-temperature substrate may be left standing on a water-cooled cooling plate to be cooled.
[0003]
[Problems to be solved by the invention]
However, when a plate is used for heating or cooling a substrate, the substrate needs to be once settled on the plate by a transfer means such as a robot hand and held for a certain period of time until the substrate reaches a predetermined temperature. This is one of the causes. In addition, since the plate on which the substrate is to be settled needs an area larger than the area of the substrate, an increase in the area occupied by the plate as the size of the substrate increases has become a problem.
[0004]
Therefore, an object of the present invention is to provide a substrate temperature management apparatus in which the area occupied by the apparatus in a production line is small and it is not necessary to hold the substrate for a predetermined time.
[0005]
[Means for Solving the Problems]
Hereinafter, the present invention will be described. In addition, in order to facilitate understanding of the present invention, reference numerals in the accompanying drawings are added in parentheses, but the present invention is not limited to the illustrated embodiment.
[0006]
The temperature management method according to the present invention solves the above-described problem by controlling the temperature of the substrate (2) by controlling the temperature of the substrate by blowing a gas on the substrate (2) being transported in a direction crossing the transport path of the substrate. Resolve.
[0007]
According to the temperature management method of the present invention, since the gas is blown in the direction crossing the substrate transport path, the gas is blown over the entire surface of the substrate by passing the substrate at the position where the gas is blown. Then, since heat exchange is performed between the blown gas and the substrate, temperature control is realized over the entire surface of the substrate. In addition, since it is only necessary to provide a nozzle for ejecting gas in the substrate transfer path, the area of the production line does not increase. Since the temperature of the substrate is controlled during the transfer of the substrate, the throughput of the production line does not decrease. In particular, the temperature management method of the present invention does not need to control the temperature of the entire substrate, and is suitable for a process in which only the temperature of the substrate surface needs to be controlled.
[0008]
The substrate temperature management device (1) of the present invention is provided with a transfer means (3) for transferring a substrate (2), and is disposed on a transfer path of the transfer means, and ejects gas in a direction traversing the transfer path. The above-mentioned problem is solved by providing possible nozzles (4, 20,..., 20) and gas supply means (5) for supplying gas to the nozzles.
[0009]
According to the temperature management device of the present invention, the above-described temperature management method of the present invention can be realized. The temperature of the gas supplied to the nozzle may or may not be controlled. If the temperature of the gas is not controlled, a gas at room temperature (normal temperature) is blown, so that the heated substrate can be cooled to room temperature. Further, the nozzles may be capable of spraying gas uniformly in a direction transverse to the transport path.
[0010]
The temperature management device of the present invention may include a temperature control means (6) for controlling the temperature of the gas supplied to the nozzle. In this case, the temperature of the substrate can be heated or cooled to an arbitrary temperature by controlling the temperature of the gas. Also, accurate temperature control of the substrate is facilitated. In addition, the temperature control unit may control the temperature of the gas between the gas supply unit and the nozzle, may control the temperature of the gas held by the gas supply unit, or the gas supply unit may The temperature of the gas to be taken in may be controlled.
[0011]
In the temperature management device of the present invention, the nozzle may be a nozzle (4) having a slit-shaped discharge port (4a) extending in a direction crossing the transport path. In this case, the gas is uniformly ejected from the slit-shaped discharge port, and the temperature is controlled uniformly in the direction traversing the transfer path. Therefore, the operation of the temperature control device such as the transfer speed of the substrate and the flow rate of the gas is performed. Is adjusted, uniform temperature control is performed over the entire surface of the substrate. For example, uniform temperature control over the entire surface of the substrate may be realized by keeping the substrate transfer speed, gas flow rate, and gas temperature constant.
[0012]
In the temperature management device of the present invention, the nozzles may be a plurality of nozzles (20 ... 20) arranged at equal intervals in a direction crossing the transport path. In this case, the gas is blown uniformly over the direction traversing the transport path by the plurality of nozzles arranged, and the temperature is controlled uniformly over the direction. By adjusting the operation of the temperature management device such as the transfer speed and the gas flow rate, uniform temperature control can be performed over the entire surface of the substrate.
[0013]
In the temperature management device according to the aspect of the invention, the transfer unit may transfer the substrate at a constant speed, the gas supply unit may supply the gas to the nozzle at a constant flow rate, and the temperature control unit may control the gas flow. The temperature may be maintained at a constant temperature. In this case, since the same temperature change occurs at the same time in each part of the substrate, the heat history becomes uniform over the entire surface of the substrate. Therefore, temperature control in a heating step that requires a uniform heat history over the entire surface of the substrate, such as post baking, can be easily performed. In addition, there is no possibility of overshoot unlike a heating method using radiant heat, for example.
[0014]
In the temperature management device according to the aspect of the invention, as the nozzle, a nozzle having the discharge port facing one surface of the substrate and a nozzle having the discharge port facing the other surface of the substrate may be provided. . In this case, since heat exchange between the substrate and the gas is performed from both sides of the substrate, the temperature of the substrate is more quickly controlled.
[0015]
BEST MODE FOR CARRYING OUT THE INVENTION
FIG. 1 shows a substrate temperature control apparatus 1 according to the present invention. The temperature management device 1 is provided on a production line that forms a pattern on a substrate by, for example, photolithography. The temperature management device 1 is applicable to various heating processes or cooling processes. For example, the temperature management device 1 may be provided in a transport path of the substrate 2 to the coater and used to cool the substrate, or may be used to cool the substrate from the coater to the exposure apparatus. May be used for pre-baking by being provided in the transport path of the developing device, or may be provided for the post-baking by being provided in a transport path from the developing device.
[0016]
The temperature control device 1 includes a transfer device 3 for transferring the substrate 2 in the direction of arrow A, a nozzle 4 having a slit-shaped discharge port 4 a extending in a direction crossing the arrow A, and a gas supply for supplying air to the nozzle 4. The apparatus includes a device 5 and a temperature control device 6 installed between the gas supply device 5 and the nozzle 4 to control the air temperature.
[0017]
The transport device 3 is configured to include, for example, transport rollers 7 and an electric motor (not shown) that rotationally drives the transport rollers 7. The substrate 2 on the transport rollers 7 can be transported. The discharge port 4a has a length over the entire width of the substrate 2 and is opened at a constant width over the entire width of the substrate 2. The gas supply device 5 includes, for example, a fan (not shown) and an electric motor (not shown) for driving the fan to rotate, and controls the rotation speed of the electric motor to feed air at an arbitrary flow rate. It is possible. If the temperature management device 1 is for heating, the temperature control device 6 is configured to include, for example, an electric heater (not shown), and adjusts the temperature of the electric heater so that air from the gas supply device 5 can be heated to an arbitrary temperature. The temperature can be raised up to. If the temperature management device 1 is for cooling, the temperature control device 6 is configured to include, for example, a heat exchanger (not shown), and the air from the gas supply device 5 can be arbitrarily adjusted by adjusting the temperature of the heat exchanger. Coolable to temperature.
[0018]
Next, the operation of the temperature management device 1 will be described.
[0019]
When the substrate 2 is placed on the transfer device 3, the temperature control device 1 drives the gas supply device 5 to supply air to the nozzle 4 at a constant flow rate, and the air is kept constant by the temperature control device 6. Adjust to temperature. Further, the temperature management device 1 rotates the rollers 7... 7 at a constant angular velocity, and conveys the substrate 2 in the direction of arrow A. By such an operation of the temperature control device 1, the substrate 2 passes from the end 2a under the discharge port 4a, and is sequentially heated from the end 2a to the end 2b by the hot air or the cool air 8 jetted from the discharge port 4a. Or cooled.
[0020]
The transfer speed of the substrate 2 by the transfer device 3, the flow rate of the air supplied by the gas supply device 5, and the temperature of the air adjusted by the temperature control device 6 depend on the types of processing such as pre-bake and post-bake, and It may be set appropriately according to various conditions such as the material of the resist being formed and the thickness of the substrate. For example, hot air may be ejected from the discharge port 4a toward the transport path of the substrate 2 at a wind speed of 10 m or more per second.
[0021]
The present invention is not limited to the embodiments described above, but may be implemented in various forms.
[0022]
The shape, number, and arrangement of the nozzles may be appropriately changed. For example, as shown in FIG. 2A, a plurality of nozzles 20... 20 may be arranged at equal intervals in a direction transverse to the transport path of the substrate 2. Further, as shown in FIG. 2B, a plurality of nozzles 4... 4 having slit-shaped discharge ports may be arranged in a direction crossing the transport path of the substrate 2. Further, as shown in FIG. 3A, a plurality of nozzles 4... 4 may be arranged side by side in the transport direction of the substrate, and hot air or cold air 8 may be blown onto the substrate 2. As shown in FIG. 3B, the nozzles 4 may be arranged up and down with respect to the transport path, and hot air or cold air 8 may be simultaneously blown onto the substrate 2 from above and below.
[0023]
The conveying means is not limited to the roller conveyor, and various means such as a cart and a belt may be applied as long as the hot air or the cold air 8 can be blown onto the surface of the substrate 2 while conveying the substrate 2. be able to. Further, the transport state of the substrate 2 does not need to be horizontal, and the substrate 2 can be transported in various states as long as the substrate 2 can be heated by blowing hot air or cold air 8 thereon.
[0024]
When the substrate is cooled by the temperature management device 1, the substrate 2 may be cooled by omitting the temperature control device 6 and blowing air at room temperature (normal temperature) onto the substrate 2.
[0025]
The heating part of the temperature control device 1 may be surrounded by an insulated chamber so as not to be affected by the room temperature or the temperature of the conveyor. The hot air blown out from the nozzle 4 may be exhausted from the chamber, or may be returned to the gas supply device 5 and circulated.
[0026]
【The invention's effect】
As described above, according to the present invention, the gas is blown in the direction traversing the transport path of the substrate, so that the substrate passes through the position where the gas is blown, so that the gas is spread over the entire surface of the substrate. Sprayed. Then, since heat exchange is performed between the blown gas and the substrate, temperature control is realized over the entire surface of the substrate. In addition, since it is only necessary to provide a nozzle for ejecting gas in the substrate transfer path, the area of the production line does not increase. Since the temperature of the substrate is controlled during the transfer of the substrate, the throughput of the production line does not decrease. In particular, the temperature management method of the present invention does not need to control the temperature of the entire substrate, and is suitable for a process in which only the temperature of the substrate surface needs to be controlled.
[Brief description of the drawings]
FIG. 1 is a diagram showing an embodiment of a substrate temperature management device according to the present invention.
FIG. 2 is a diagram showing a modified example of a nozzle.
FIG. 3 is a diagram showing a modification of the arrangement location of nozzles.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 Temperature management device 2 Substrate 3 Transfer device 4 Nozzle 4a Discharge port 5 Gas supply device 6 Temperature control device

Claims (7)

搬送中の基板に対して、前記基板の搬送経路を横断する方向に亘って気体を吹き付けて、前記基板の温度を制御することを特徴とする基板の温度管理方法。A method of controlling the temperature of a substrate, comprising blowing a gas onto a substrate being transported in a direction transverse to a transport path of the substrate to control the temperature of the substrate. 基板を搬送する搬送手段と、前記搬送手段の搬送経路に配置され、前記搬送経路を横断する方向に亘って気体を噴出可能なノズルと、前記ノズルに気体を供給する気体供給手段とを備えたことを特徴とする基板の温度管理装置。Transport means for transporting the substrate, a nozzle arranged on the transport path of the transport means, capable of ejecting gas in a direction transverse to the transport path, and gas supply means for supplying gas to the nozzle A substrate temperature management device, characterized in that: 前記ノズルに供給される気体の温度を制御する温度制御手段を備えることを特徴とする請求項2に記載の温度管理装置。The temperature management device according to claim 2, further comprising a temperature control unit configured to control a temperature of a gas supplied to the nozzle. 前記ノズルは、前記搬送経路を横断する方向にのびるスリット状の吐出口を有するノズルであることを特徴とする請求項2又は3に記載の基板の温度管理装置。4. The substrate temperature management device according to claim 2, wherein the nozzle has a slit-shaped discharge port extending in a direction crossing the transport path. 5. 前記ノズルは、前記搬送経路を横断する方向に等間隔で配列された複数のノズルであることを特徴とする請求項2又は3に記載の基板の温度管理装置。The substrate temperature management device according to claim 2, wherein the nozzles are a plurality of nozzles arranged at equal intervals in a direction crossing the transport path. 前記搬送手段は、前記基板を一定速度で搬送し、
前記気体供給手段は、前記気体を一定の流量で前記ノズルに供給し、
前記温度制御装置は、前記気体の温度を一定温度に保つことを特徴とする請求項2〜5のいずれか1項に記載の温度管理装置。
The transfer means transfers the substrate at a constant speed,
The gas supply means supplies the gas to the nozzle at a constant flow rate,
The temperature control device according to any one of claims 2 to 5, wherein the temperature control device keeps the temperature of the gas at a constant temperature.
前記ノズルとして、前記吐出口を前記基板の一方の面に向けたノズルと、前記吐出口を前記基板の他方の面に向けたノズルとが設けられていることを特徴とする請求項2〜6のいずれか1項に記載の温度管理装置。7. The nozzle according to claim 2, wherein the nozzle includes a nozzle having the discharge port directed to one surface of the substrate, and a nozzle having the discharge port directed to the other surface of the substrate. The temperature management device according to any one of claims 1 to 7.
JP2003087007A 2003-03-27 2003-03-27 Method and device for controlling temperature of substrate Pending JP2004296773A (en)

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Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006351595A (en) * 2005-06-13 2006-12-28 Hitachi High-Technologies Corp Substrate treatment unit, substrate treatment method, manufacturing method of substrate
JP2007017977A (en) * 2005-07-06 2007-01-25 Asml Netherlands Bv Substrate handler, lithographic apparatus and device manufacturing method
JP2008116072A (en) * 2006-11-01 2008-05-22 Matsushita Electric Ind Co Ltd Board conveying method and device
JP2008277551A (en) * 2007-04-27 2008-11-13 Tokyo Electron Ltd Coating/developing device and method, and storage medium
JP2008277554A (en) * 2007-04-27 2008-11-13 Tokyo Electron Ltd Heating device, heating method coating/developing device, and storage medium
JP2011248381A (en) * 2011-08-29 2011-12-08 Asahikogyosha Co Ltd Nozzle structure for glass substrate temperature adjustment
JP2012027047A (en) * 2010-05-21 2012-02-09 Asahi Kogyosha Co Ltd Nozzle structure for controlling temperature of glass substrate
WO2014041941A1 (en) * 2012-09-14 2014-03-20 株式会社ニコン Substrate processing device and device manufacturing method

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006351595A (en) * 2005-06-13 2006-12-28 Hitachi High-Technologies Corp Substrate treatment unit, substrate treatment method, manufacturing method of substrate
JP2007017977A (en) * 2005-07-06 2007-01-25 Asml Netherlands Bv Substrate handler, lithographic apparatus and device manufacturing method
JP2009302558A (en) * 2005-07-06 2009-12-24 Asml Netherlands Bv Substrate handler, lithographic apparatus, and device manufacturing method
JP2008116072A (en) * 2006-11-01 2008-05-22 Matsushita Electric Ind Co Ltd Board conveying method and device
JP2008277551A (en) * 2007-04-27 2008-11-13 Tokyo Electron Ltd Coating/developing device and method, and storage medium
JP2008277554A (en) * 2007-04-27 2008-11-13 Tokyo Electron Ltd Heating device, heating method coating/developing device, and storage medium
KR101177965B1 (en) * 2007-04-27 2012-08-28 도쿄엘렉트론가부시키가이샤 Coating-developing apparatus, method and storage medium
JP2012027047A (en) * 2010-05-21 2012-02-09 Asahi Kogyosha Co Ltd Nozzle structure for controlling temperature of glass substrate
JP2011248381A (en) * 2011-08-29 2011-12-08 Asahikogyosha Co Ltd Nozzle structure for glass substrate temperature adjustment
WO2014041941A1 (en) * 2012-09-14 2014-03-20 株式会社ニコン Substrate processing device and device manufacturing method
CN104620178A (en) * 2012-09-14 2015-05-13 株式会社尼康 Substrate processing device and device manufacturing method
CN106933065A (en) * 2012-09-14 2017-07-07 株式会社尼康 Substrate board treatment

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