JP6418531B2 - RESIST DEVELOPING DEVICE, RESIST DEVELOPING METHOD, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD - Google Patents

Description

  The present invention relates to a resist developing apparatus, a resist developing method, and a semiconductor device manufacturing method.

  2. Description of the Related Art Conventionally, there is known a resist developing apparatus that develops a resist formed on a semiconductor wafer by revolving a carrier capable of storing a plurality of semiconductor wafers in parallel at predetermined intervals while revolving the carrier toward the carrier. (For example, refer to Patent Document 1).

  As shown in FIG. 12, the conventional resist developing apparatus 900 has a rotating body 910 that rotates about a rotation axis A, and is supported by the rotating body 910 and holds the carrier 100 to revolve the carrier 100. The cradle 920 that revolves around the rotation axis A and the inside of the track in the revolving motion of the carrier 100 are disposed, and the developer is ejected from the inside of the track in the revolving motion of the carrier 100 toward the outside of the track. A plurality of spray nozzles 932 are provided. The plurality of spray nozzles 932 are part of the nozzle complex 930.

  As shown in FIG. 13, the conventional resist developing apparatus 900 is configured such that the angle formed by the spray direction of the developer at the spray nozzle 932 and the back surface of the semiconductor wafer W is 0 ° (that is, the spray nozzle It is comprised so that the injection direction of the developing solution in 932 and the back surface of the semiconductor wafer W may become parallel (refer Fig.13 (a)). Further, the spray nozzle 932 in the conventional resist developing apparatus 900 is a spray nozzle having a circular injection hole 933 (see FIG. 13B). For this reason, the spray nozzle 932 ejects the developer in a circular ejection range when viewed from the spray nozzle 932 toward the ejection direction side.

  The back surface of the semiconductor wafer W refers to a vertically lower surface when the carrier 100 containing the semiconductor wafer W is held by a cradle. Further, the front surface with respect to the back surface of the semiconductor wafer W (hereinafter simply referred to as the front surface of the semiconductor wafer W) refers to a vertically upper surface when the carrier 100 containing the semiconductor wafer W is held in the cradle.

  According to the conventional resist developing apparatus 900, since the plurality of spray nozzles 932 are provided, when developing the resist formed on the semiconductor wafer, a new developer can be continuously sprayed from the plurality of spray nozzles 932, and the resist is removed. It becomes possible to develop efficiently.

  In addition, according to the conventional resist developing apparatus 900, the resist is formed on the semiconductor wafer W by spraying the developer toward the carrier 100 that can store the plurality of semiconductor wafers W. W can be developed at a time. As a result, the conventional resist developing apparatus 900 is a highly productive resist developing apparatus.

Japanese Utility Model Publication No. 55-108742

  However, in the technical field of resist developing apparatuses, there is a demand for supplying more developer to the semiconductor wafer in order to develop the semiconductor wafer more reliably. In addition, simply increasing the amount of developer to be ejected results in increased waste of the developer, so it is preferable to satisfy the above requirements without increasing the amount of developer.

  Therefore, the present invention has been made in view of the above problems, and it is possible to supply a larger amount of developer to a semiconductor wafer than a conventional resist developing device without increasing the amount of developer to be sprayed. An object of the present invention is to provide a resist developing apparatus. It is another object of the present invention to provide a resist developing method for developing using such a resist developing apparatus. It is another object of the present invention to provide a method for manufacturing a semiconductor device using such a resist developing method.

[1] The resist developing apparatus of the present invention is formed on the semiconductor wafer by spraying a developer toward the carrier while revolving the carrier capable of storing a plurality of semiconductor wafers in parallel at predetermined intervals. A resist developing apparatus for developing a resist, wherein a rotating body capable of rotating about a rotating shaft, and a rotating body supported by the rotating body and holding the carrier in a predetermined rotating direction about the rotating shaft A cradle capable of revolving along the track, and a plurality of inner spray nozzles disposed inside the track in the revolving motion of the carrier and spraying the developer from the inside of the track toward the outside of the track. When the arbitrary components in the resist developing device are viewed from the side perpendicular to the rotation axis, the upper side of the revolving motion is set as one side, and the revolving operation When the lower side is the other side, at least one inner spray nozzle among the plurality of inner spray nozzles is such that the one side of the spraying range of the developer is reduced in gravity toward the one side. It has an injection hole defined obliquely with respect to the rotation axis on the lower side in the direction and on the upper side in the gravity direction on the other side.

[2] In the resist developing apparatus of the present invention, when the inner spray nozzle having the ejection hole is viewed from the ejection direction of the developer, the portion defining the ejection range on the one side of the ejection hole It is preferable that an angle formed between a straight line connecting the uppermost portion and the lowermost portion and the rotation axis is in a range of 30 ° to 85 °.

[3] In the resist developing apparatus of the present invention, it is preferable that the injection hole has a slit shape.

[4] In the resist developing device of the present invention, it is preferable that all the inner spray nozzles constituting the plurality of inner spray nozzles have the injection holes.

[5] In the resist developing device of the present invention, the resist developing device is disposed outside the track in the revolving motion of the carrier, and applies the developer from the outside of the track toward the inside of the track. It is preferable to further comprise a plurality of outer spray nozzles for spraying.

[6] In the resist developing apparatus of the present invention, the plurality of outer spray nozzles are located on the lower side of the plurality of inner spray nozzles, and are parallel to the rotation axis and include a spraying direction of the plurality of inner spray nozzles. At least one spray nozzle of the plurality of outer spray nozzles is disposed between the first virtual surface and a second virtual surface perpendicular to the first virtual surface and including the rotation axis. It is preferable that the developer is ejected toward one side of the third imaginary plane connecting the rotation axis and the rotation axis.

[7] In the resist developing method of the present invention, the semiconductor wafer is stored in a carrier capable of storing a plurality of semiconductor wafers in parallel at predetermined intervals, and the carrier is held in a cradle supported by a rotating body of a resist developing apparatus. A carrier holding step, and a plurality of inner spray nozzles arranged on the inner side of the track in the revolving motion of the carrier toward the outside of the track while causing the carrier to revolve around the rotation axis of the rotating body. A resist development step for developing the resist formed on the semiconductor wafer by spraying a developer in this order, and the revolving motion when the plurality of inner spray nozzles are viewed from the side perpendicular to the rotation axis. When the upper side is the one side and the lower side of the revolving motion is the other side, in the resist development step, The spray range on one side of the spray range of the developer from the at least one inner spray nozzle among the plurality of inner spray nozzles is lower in the gravitational direction toward the one side and the other side. The developer is jetted to the upper side in the direction of gravity so as to be inclined with respect to the rotation axis.

[8] A method of manufacturing a semiconductor device according to the present invention includes a resist coating step of applying a resist to a plurality of semiconductor wafers, a pattern transfer step of exposing the resist and transferring a predetermined pattern to the resist, and a predetermined pattern A resist pattern forming step of developing the resist to which the resist has been transferred to form a resist pattern in this order, wherein the resist pattern forming step includes the steps of separating the plurality of semiconductor wafers at predetermined intervals. A carrier holding step of storing the semiconductor wafer in a carrier that can be stored in parallel and holding the carrier in a cradle supported by a rotating body of a resist developing device; and revolving the carrier about a rotating shaft of the rotating body A plurality of inner sps arranged inside the track in the revolving motion of the carrier while moving A resist development step for developing the resist formed on the semiconductor wafer by spraying a developer from the nozzle toward the outside of the track, and the plurality of inner spray nozzles perpendicular to the rotation axis. When viewed from the other side, when the upper side of the revolving motion is one side and the lower side of the revolving motion is the other side, in the resist developing step, at least one of the plurality of inner spray nozzles From one inner spray nozzle, the one spraying range of the developer spraying range is lower in the gravitational direction toward the one side, and more upward in the gravitational direction toward the other side. On the other hand, the resist is developed using a resist development method in which the developer is sprayed in a slanting manner.

  According to the resist developing device of the present invention, at least one inner spray nozzle among the plurality of inner spray nozzles is one side of the developer spray range (the upper side of the revolving motion of the cradle. The injection range of the semiconductor wafer that enters the developer injection range is on the lower side in the direction of gravity on the one side and on the other side (the lower side of the revolving motion of the cradle. That is, the semiconductor wafer during resist development) Has an ejection hole that is defined obliquely with respect to the rotation axis on the upper side in the direction of gravity. For this reason, the end part of the advancing direction side of a semiconductor wafer can be lifted by making a semiconductor wafer enter into the spraying range of the developing solution which prescribed | regulated one side diagonally. The semiconductor wafer with the end portion lifted comes into contact with more developer than the semiconductor wafer with the end portion not lifted. As a result, it is possible to supply a larger amount of developer to the semiconductor wafer than a conventional resist developing device without increasing the amount of developer to be ejected.

  According to the resist development method of the present invention, since development is performed using the resist development apparatus of the present invention, the semiconductor is developed rather than performing development using the conventional resist development apparatus without increasing the amount of the developer to be ejected. It becomes possible to supply more developer to the wafer.

  According to the method for manufacturing a semiconductor device of the present invention, since the resist development method of the present invention in which development is performed using the resist development apparatus of the present invention is included, the development of the semiconductor wafer can be performed more reliably, and as a result. It becomes possible to manufacture a semiconductor device with a high yield.

1 is a diagram of a resist developing apparatus 1 according to Embodiment 1. FIG. FIG. 1A is a side sectional view of the resist developing apparatus 1, and FIG. 1B is a plan view of the resist developing apparatus 1. FIG. 1 shows a state in which the carrier 100 is mounted. In FIG. 1B, the cradle 20 is not shown. Furthermore, in Fig.1 (a), the code | symbol is illustrated only about the inner side spray nozzle 32. FIG. In the subsequent drawings, only one of the spray nozzles may be indicated by a reference numeral. 2 is a perspective view of a carrier 100. FIG. It is a figure shown in order to demonstrate the inner side nozzle composite body 30 in Embodiment 1. FIG. 3A is a view for explaining the relationship between the plurality of inner spray nozzles 32 (inner nozzle complex 30) and the carrier 100, and FIG. 3B is a front view of the inner nozzle complex 30. FIG. FIG. 3C is a front view of the inner spray nozzle 32. In FIG. 3A, illustration of components unnecessary for the description of the cradle 20 and the like is omitted. 6 is a view for explaining the relationship between a developer spray range 32a of an inner spray nozzle 32 and a semiconductor wafer W in Embodiment 1. FIG. FIG. 4A is a schematic view showing a state immediately before the semiconductor wafer W enters the injection range 32a, and FIG. 4B is a schematic view showing a state in which the semiconductor wafer W passes through the injection range 32a. is there. In FIG. 4, illustration of components unnecessary for the description of the carrier 100 and the like is omitted. 3 is a flowchart of a method for manufacturing the semiconductor device according to the first embodiment. 6 is a diagram of a resist developing device 2 according to Embodiment 2. FIG. FIG. 6A is a side sectional view of the resist developing device 2, and FIG. 6B is a plan view of the resist developing device 2. FIG. 6 shows a state where the carrier 100 is mounted. In FIG. 6B, the cradle 20 is not shown. It is a front view of the inner side spray nozzle 32 and the outer side spray nozzle 42 in Embodiment 2. FIG. FIG. 7A is a front view of the inner spray nozzle 32, and FIG. 7B is a front view of the outer spray nozzle 42. FIG. 7A is a view similar to FIG. 3C, but is shown again for comparison between the inner spray nozzle 32 and the outer spray nozzle 42. It is a figure shown in order to demonstrate the resist image development apparatus 3 which concerns on Embodiment 3. FIG. FIG. 8A is a plan view of the resist developing device 3, FIG. 8B is a front view of the outer nozzle complex 60, and FIG. 8C is a front view of the outer spray nozzle 62. FIG. 10 is a front view of an inner nozzle complex 70 in Modification 1. In FIG. 9, only the upper half of the inner nozzle complex 70 is displayed. FIG. 10 is a front view of an inner spray nozzle 82 in Modification 2. It is a front view of the inner side spray nozzle 92 in the modification 3. It is a figure shown in order to demonstrate the conventional resist image development apparatus 900. FIG. It is a figure shown in order to demonstrate the nozzle complex 930 in the conventional resist image development apparatus 900. FIG. FIG. 13A is a view for explaining the relationship between the nozzle complex 930 and the carrier 100, and FIG. 13B is a front view of the spray nozzle 932 (viewed from the injection hole 933 side).

Hereinafter, a resist developing apparatus, a resist developing method, and a semiconductor device manufacturing method of the present invention will be described based on the embodiments shown in the drawings.
In the drawings for explaining the resist developing apparatus and the like of the present invention, the direction along the rotation axis A is the z axis, and one direction perpendicular to the z axis (the direction in which the inner spray nozzle 32 ejects the developer in the first embodiment). The coordinate is illustrated with the x-axis as the direction parallel to the z-axis and the other direction perpendicular to the z-axis (the direction perpendicular to the direction in which the inner spray nozzle 32 ejects the developer in the first embodiment) as the y-axis.

In the description of the present specification, “up” or “upward in the direction of gravity” means up or up along the vertical direction (the direction opposite to or in the direction of gravity). In the description of the present specification, “lower” or “lower side in the direction of gravity” means lower or lower side in the vertical direction (direction along the gravity direction or the side thereof).
In the description of the present specification, the term “injection direction” refers to the direction in which the developer is injected from the front center of the spray nozzle (if the developer is not injected from the front center of the spray nozzle, the spray nozzle The direction in which the spraying direction of the developer to be sprayed is averaged.

[Embodiment 1]
First, the configuration of the resist developing apparatus 1 according to the first embodiment will be described.
The resist developing apparatus 1 according to the first embodiment forms a semiconductor wafer W by ejecting a developer toward the carrier 100 while revolving the carrier 100 capable of storing a plurality of semiconductor wafers W in parallel at predetermined intervals. And a resist developing device for developing the resist that has been used.

  As shown in FIG. 1, the resist developing apparatus 1 includes a rotating body 10, a cradle 20, an inner nozzle complex 30 having a plurality of inner spray nozzles 32, and a chamber 50.

  The semiconductor wafer W is in a state where a predetermined pattern is transferred to the resist after the resist is applied to both sides. As the semiconductor wafer W, a silicon wafer, a SiC wafer, a GaN wafer, or the like can be used.

  As shown in FIG. 2, the carrier 100 is disposed on the inner side of the bottom surface portion 110, the side surface portion 120 erected from the outer edge of the bottom surface portion 110, the opening portion 130 for taking in and out the semiconductor wafer W. A plurality of grooves 140 are provided. A hole is formed in the center of the bottom surface portion 110 so that a developer and air can enter and exit. The carrier 100 can store a plurality of semiconductor wafers W in parallel at predetermined intervals by inserting the peripheral portions of the plurality of semiconductor wafers W into the inner grooves 140. The number of semiconductor wafers W that can be stored in the carrier 100 is, for example, 25. As a material of the carrier 100, a resin such as polypropylene or polycarbonate is mainly used.

As illustrated in FIG. 1A, the rotating body 10 can rotate about the rotation axis A by a driving unit (provided outside the chamber 50 in the first embodiment). The rotating body 10 includes a turntable 12 provided at a lower portion in the chamber 50 and a support portion 14 provided on the turntable 12.
The turntable 12 has a disk shape perpendicular to the rotation axis A and can rotate around the rotation axis A.
The support portion 14 is connected to the turntable 12 and has a structure for supporting a cradle 20 described later.
The rotating body 10 may further include a rotating rail disposed on the upper side in the chamber 50. By setting it as such a structure, it becomes possible to support the cradle 20 also from the upper side.

  The rotation speed of the rotating body 10 is preferably 50 to 200 rpm, for example, 150 rpm. When the rotational speed is less than 50 rpm, the development efficiency is poor. If the rotational speed exceeds 200 rpm, the revolving motion is too fast, and it becomes difficult to supply the developer to the semiconductor wafer W.

The cradle 20 is supported by the rotating body 10 and can revolve along a predetermined rotation direction D around the rotation axis A while holding the carrier 100. The cradle 20 is a car body configured to be able to surround the side surface portion 120 of the carrier 100.
The cradle 20 holds the carrier 100 by fitting the carrier 100 into the cradle 20. At this time, the opening 130 for taking in and out the semiconductor wafer W faces the rotation axis A side.

The cradle 20 is supported by the support portion 14 of the rotating body 10. For this reason, when the rotating body 10 starts rotating, the cradle 20 revolves around the rotation axis A in accordance with the rotation. The orbit of the revolving motion of the cradle 20 is a circular orbit as shown in FIG.
As shown in FIG. 1A, the cradle 20 is configured to hold the carrier 100 so that the semiconductor wafer W is horizontal.

The inner nozzle complex 30 includes a plurality of inner spray nozzles 32 and a nozzle base 34 as shown in FIGS.
As shown in FIG. 1, the plurality of inner spray nozzles 32 are arranged inside the track in the revolving motion of the carrier 100, and spray the developer from the inside of the track toward the outside of the track. The direction in which the developer is ejected from the inner spray nozzle 32 is a direction perpendicular to the rotation axis A (horizontal direction).

Here, the inner spray nozzle 32 in the first embodiment will be further described.
In order to make the direction easy to understand, when an arbitrary component in the resist developing apparatus 1 is viewed from the side perpendicular to the rotation axis A, the upper side of the revolving motion of the cradle 20 is set as one side, and the lower side of the revolving motion of the cradle 20 One side is the other side.
All of the inner spray nozzles 32 constituting the plurality of inner spray nozzles 32 are arranged such that one side of the developer spray range is lower in the direction of gravity toward the one side and the direction of gravity toward the other side. On the upper side, there is an injection hole 33 that is defined obliquely with respect to the rotation axis A (see reference numeral 32a in FIG. 4 for the injection range).

When viewed from the spraying direction of the developer of the inner spray nozzle 32 having the spray holes 33 (see FIG. 3C), the uppermost and lowermost portions of the portion that defines the spray range on one side of the spray holes 33 The angle θ between the straight line L1 connecting the two and the rotation axis A is in the range of 30 ° to 85 °. The “angle formed” here refers to the angle of the smaller one of the two corners formed when a certain straight line and another straight line intersect. The meaning of setting the range of the angle θ will be described later.
As shown in FIGS. 3B and 3C, the injection hole 33 has a slit shape.

  As shown in FIG. 4, the developer sprayed from the spray hole 33 has a rotation axis A having a spray range on one side that is lower in the gravitational direction on one side and on the upper side in the gravitational direction on the other side. Is defined obliquely. When the semiconductor wafer W enters here, the semiconductor wafer W is lifted up so as to be in an obliquely defined developer spray range (see FIG. 4B). In addition, the broken line shown with the code | symbol h in FIG.4 (b) is a reference line which shows horizontal.

Incidentally, the reason why the angle θ formed by the straight line L1 and the rotation axis A is in the range of 30 ° to 85 ° is as follows. That is, when the angle θ is smaller than 30 °, the angle defining the injection range is too steep and the semiconductor wafer W may not be sufficiently floated. Further, when the angle θ is larger than 85 °, the angle defining the injection range is too shallow, and the semiconductor wafer W may not be sufficiently floated.
From the above viewpoint, the angle θ formed by the straight line L1 and the rotation axis A is more preferably in the range of 40 ° to 80 °. The angle θ in the first embodiment is in the range of 40 ° to 80 °, for example, 60 °.

The nozzle base 34 is provided on the rotation axis A. The plurality of inner spray nozzles 32 are arranged on the nozzle base 34 so as to form a line in the vertical direction at predetermined intervals.
As the developer sprayed from the inner spray nozzle 32, one corresponding to the resist can be used, and for example, xylene or isoparaffin hydrocarbon can be used.

  The inner nozzle complex 30 further has a function of adjusting the spray amount of the developer. The amount of the developer sprayed will be described later.

  The chamber 50 has a cylindrical shape covered with a partition wall, and stores a part of the rotating body 10, the cradle 20, and the plurality of inner spray nozzles 32 inside. In the chamber 50, an air inlet (not shown) is provided in the upper part, and a suction pump (not shown) is provided in the lower part. When the resist developing apparatus 1 is used, air in the chamber 50 is sucked by the suction pump, and air flows from the intake air inlet. For this reason, in the chamber 50, a flow of air flowing from the top to the bottom is formed.

Next, a resist developing method according to the first embodiment and a semiconductor device manufacturing method according to the first embodiment will be described.
As shown in FIG. 5, the semiconductor device manufacturing method according to the first embodiment includes a “semiconductor wafer preparation step S10”, a “resist application step S20”, a “pattern transfer step S30”, a “resist pattern formation step S40”, and “ The element formation step S50 "is included in this order.

(A) Semiconductor wafer preparation step S10
First, a semiconductor wafer W is prepared. In the first embodiment, oxide films (not shown) are formed on the front surface and the back surface of the semiconductor wafer W.

(B) Resist application step S20
Next, a resist is applied to both surfaces of the semiconductor wafer W. Specifically, using a spin coater, a slit coater, or the like, a resist solution is dropped while rotating the semiconductor wafer W to apply a resist having a uniform thickness on the front and back surfaces of the semiconductor wafer W. In the first embodiment, a type (negative type) resist in which a non-photosensitive portion is developed is used.

(C) Pattern transfer step S30
Next, a predetermined pattern is transferred to the resist on the semiconductor wafer W. Specifically, a photomask is mounted on an exposure apparatus such as a stepper, mirror projection, contact / proximity exposure apparatus, front / back simultaneous exposure apparatus, and the photomask and the semiconductor wafer W are aligned. Next, the resist is exposed to ultraviolet light (visible light or laser may be used depending on the type of resist) through a photomask, and a predetermined pattern is transferred. The pattern formed on the front surface and the back surface may be the same or different.

(D) Resist pattern forming step S40
Next, a resist pattern is formed by developing the resist to which the predetermined pattern is transferred. The resist pattern forming step S40 includes a “carrier holding step S41”, a “resist developing step S42”, and a “rinsing step S45” in this order. Among these, the “carrier holding step S41” and the “resist developing step S42” are resist developing methods according to the first embodiment.

(D-1) Carrier holding step S41
First, a semiconductor wafer W on which a predetermined pattern is transferred to a resist is stored in a carrier 100 that can store a plurality of semiconductor wafers W in parallel at predetermined intervals, and the cradle 20 supported by the rotating body 10 of the resist developing apparatus 1. The carrier 100 is held. Specifically, each semiconductor wafer W is accommodated in parallel at a predetermined interval by inserting the peripheral portion of each semiconductor wafer W into a groove 140 formed inside the carrier 100.

(D-2) Resist development step S42
Next, while the carrier 100 revolves around the rotation axis A of the rotating body 10, development is performed from the plurality of inner spray nozzles 32 disposed on the inner side of the track in the revolving motion of the carrier 100 toward the outer side of the track. A resist development step S42 for developing the resist formed on the semiconductor wafer W by spraying the liquid is performed. By doing so, the unexposed portion of the resist is developed, and the exposed portion of the resist remains as a resist pattern.

Here, in the same manner as when the resist developing apparatus 1 is described, when the plurality of inner spray nozzles 32 are viewed from the side perpendicular to the rotation axis A, the upper side of the revolving motion of the cradle 20 is set as one side, and the cradle 20 The lower side of the revolving movement is the other side.
In the resist development step S42, from one of the plurality of inner spray nozzles 32 (all inner spray nozzles 32 in the first embodiment) to one of the developer spray ranges. Is defined obliquely with respect to the rotation axis A so that one side is lower in the gravitational direction and the other side is higher in the gravitational direction.

  In the resist development step S42, since the developer is sprayed and the carrier 100 is revolved, the developed non-photosensitive resist (negative) is revolved from the back surface of the semiconductor wafer W to the outside of the orbit in the revolving motion of the carrier 100. In addition to being shaken off by the centrifugal force, it can be shaken off by the flow of the developer sprayed from the inner spray nozzle 32. As a result, it is possible to prevent the developed non-photosensitive resist (negative) from adhering to the semiconductor wafer W.

(D-3) Rinsing step S45
Next, a rinse liquid (mainly isopropyl alcohol, butyl acetate, etc.) is sprayed from the inner spray nozzle 32 to stop development on the front and back surfaces of the semiconductor wafer W. By doing so, it is possible to prevent overdevelopment of the front and back surfaces of the semiconductor wafer W.

  Through the above steps, a resist pattern can be formed on the semiconductor wafer W.

(E) Element forming step S50
Next, in accordance with the resist pattern formed in the resist pattern forming step S40, etching and ion implantation are performed on the semiconductor wafer W to perform element formation. Thereafter, the resist pattern is removed by plasma ashing, organic chemicals, strong acid or the like (for example, sulfuric acid, hydrogen peroxide solution, fuming nitric acid).

  Then, a semiconductor device can be manufactured by performing element formation, oxide film formation, electrode formation, and the like.

  The effects of the resist developing apparatus 1, the resist developing method, and the semiconductor device manufacturing method according to the first embodiment will be described below.

  According to the resist developing apparatus 1 according to the first embodiment, the inner spray nozzle 32 is configured such that one side of the developer spraying range is closer to the lower side in the direction of gravity toward the one side and closer to the other side. On the upper side in the direction of gravity, there is an injection hole 33 that is defined obliquely with respect to the rotation axis A. For this reason, the end of the semiconductor wafer W on the traveling direction side can be lifted by causing the semiconductor wafer W to enter the developer spraying range in which one side is defined obliquely. The semiconductor wafer W with the end portion lifted comes into contact with more developer than the semiconductor wafer with the end portion not lifted. As a result, it is possible to supply a larger amount of developer to the semiconductor wafer W than a conventional resist developing device without increasing the amount of developer to be ejected.

  In addition, since the resist developing apparatus 1 according to the first embodiment includes the plurality of inner spray nozzles 32, when developing the resist formed on the semiconductor wafer W, new development is constantly performed from the plurality of inner spray nozzles 32. The liquid can be ejected, and the resist can be efficiently developed.

  In addition, according to the resist developing apparatus 1 according to the first embodiment, the resist is formed on the semiconductor wafer W by spraying the developer toward the carrier 100 that can store the plurality of semiconductor wafers W. The semiconductor wafer W can be developed at once. As a result, the resist developing apparatus 1 according to Embodiment 1 is a highly productive resist developing apparatus.

  Further, according to the resist developing apparatus 1 according to the first embodiment, the angle θ formed by the straight line L1 and the rotation axis A is in the range of 30 ° to 85 °, and therefore the angle that defines the injection range is set appropriately. The semiconductor wafer W can be sufficiently floated.

  Further, according to the resist developing apparatus 1 according to the first embodiment, the angle θ formed by the straight line L1 and the rotation axis A is in the range of 40 ° to 80 °, and thus the angle that defines the injection range is more appropriate. As a result, the semiconductor wafer W can be floated more sufficiently.

  Further, according to the resist developing apparatus 1 according to the first embodiment, since the injection hole 33 has a slit shape, a larger amount of developer is supplied to the semiconductor wafer W through the injection hole 33 having a relatively simple shape. It becomes possible.

  Further, according to the resist developing apparatus 1 according to the first embodiment, since all the inner spray nozzles 32 constituting the plurality of inner spray nozzles 32 have the injection holes 33, more developer for all of the plurality of semiconductor wafers W. Can be supplied.

  According to the resist developing method according to the first embodiment, since development is performed using the resist developing apparatus 1 according to the first embodiment, development is performed using a conventional resist developing apparatus without increasing the amount of developer to be ejected. It becomes possible to supply a larger amount of developer to the semiconductor wafer W than to perform the above.

  The semiconductor device manufacturing method according to the first embodiment includes the resist developing method according to the first embodiment in which development is performed using the resist developing device 1 according to the first embodiment, and therefore development of the semiconductor wafer W is more reliably performed. As a result, a semiconductor device can be manufactured with a high yield.

[Embodiment 2]
The resist developing apparatus 2 according to the second embodiment basically has the same configuration as the resist developing apparatus 1 according to the first embodiment, but includes a plurality of outer spray nozzles, and the resist developing apparatus 1 according to the first embodiment. It is different from the case of. In other words, as shown in FIG. 6, the resist developing apparatus 2 according to the second embodiment is disposed outside the track in the revolution motion of the carrier 100, and a plurality of developers are jetted from the outside of the track toward the inside of the track. The outer spray nozzle 42 is provided. The plurality of outer spray nozzles 42 are constituent elements of the outer nozzle complex 40.

As shown in FIG. 6A, the outer nozzle complex 40 includes a plurality of outer spray nozzles 42 and a nozzle base 44. The outer nozzle complex 40 has basically the same configuration as the inner nozzle complex 30 except for the matters described below.
The plurality of outer spray nozzles 42 eject the developer in a direction along the first virtual plane P1 defined by the rotation axis A and the ejection direction of the plurality of inner spray nozzles 32 (see FIG. 6B).

  All the outer spray nozzles 42 constituting the plurality of outer spray nozzles 42 are arranged such that one side of the developer spray range is on the lower side in the gravitational direction and the other side is in the gravitational direction. On the upper side, there is an injection hole 43 that is defined obliquely with respect to the rotation axis A (see FIG. 7B). Since the outer spray nozzle 42 injects the developer toward the side opposite to the inner spray nozzle 32, the shape of the injection hole 43 in the outer spray nozzle 42 is mirror-symmetrical with the shape of the injection hole 33 in the inner spray nozzle 32. (See FIG. 7).

When viewed from the direction in which the developing solution is ejected from the outer spray nozzle 42 having the ejection holes 43 (see FIG. 7B), the uppermost portion and the lowermost portion of the portion defining the ejection range on one side of the ejection holes 43 The angle θ formed by the straight line L2 connecting the rotation axis A and the rotation axis A is in the range of 30 ° to 85 °. A preferable range for the angle θ formed by the straight line L2 and the rotation axis A is the same as the angle θ formed by the straight line L1 and the rotation axis A in the first embodiment, and thus the description thereof is omitted.
The effect of the outer spray nozzle 42 having the injection hole 43 is the same as the effect of the inner spray nozzle 32 having the injection hole 33.
The injection hole 43 has a slit shape.

  As described above, the resist developing device 2 according to the second embodiment is different from the resist developing device 1 according to the first embodiment in that the resist developing device 2 includes a plurality of outer spray nozzles, but the inner spray nozzle 32 has the injection holes 33. Therefore, as in the resist developing apparatus 1 according to the first embodiment, the end portion on the traveling direction side of the semiconductor wafer W can be lifted. For this reason, according to the resist developing apparatus 2 according to the second embodiment, as in the resist developing apparatus 1 according to the first embodiment, the semiconductor wafer is more than the conventional resist developing apparatus without increasing the amount of developer to be ejected. It becomes possible to supply more developer to W.

  Moreover, according to the resist developing apparatus 2 according to the second embodiment, since the plurality of outer spray nozzles 42 are provided, the developer is likely to be applied also to a region located on the outer edge of the revolving motion in the semiconductor wafer W. As a result, according to the resist developing apparatus 2 according to the second embodiment, it is possible to sufficiently suppress the occurrence of development failure in the region of the semiconductor wafer W.

  The resist developing device 2 according to the second embodiment has the same configuration as the resist developing device 1 according to the first embodiment except that the resist developing device 2 includes a plurality of outer spray nozzles. It has a corresponding effect among the effects which the apparatus 1 has.

[Embodiment 3]
The resist developing device 3 according to the third embodiment basically has the same configuration as that of the resist developing device 2 according to the second embodiment, but the configuration of a plurality of outer nozzles is different. That is, in the resist developing device 3 according to the third embodiment, as shown in FIG. 8, the outer nozzle complex 60 having the plurality of outer spray nozzles 62 is the lower side of the plurality of inner spray nozzles 32 and rotates. The first imaginary plane P1 parallel to the axis A and including the spray directions of the plurality of inner spray nozzles 32 is disposed between the second imaginary plane P2 perpendicular to the first imaginary plane P1 and including the rotation axis A.
At least one outer spray nozzle 62 (all outer spray nozzles 62 in the third embodiment) among the plurality of outer spray nozzles 62 is more than the third virtual plane P3 connecting the plurality of outer spray nozzles 62 and the rotation axis A. The developer is sprayed toward one side (the upper side of the revolving motion).

  The outer nozzle complex 60 basically has the same configuration as the outer nozzle complex 40 in the second embodiment, but as shown in FIGS. 8B and 8C, all the outer spray nozzles 62 are circular. The injection hole 63 is provided.

  As described above, the resist developing device 3 according to the third embodiment is different from the resist developing device 2 according to the second embodiment in the configuration of the plurality of outer spray nozzles, but the inner spray nozzle 32 has the injection holes 33. Similarly to the resist developing apparatus 2 according to the second embodiment, the end of the semiconductor wafer W on the traveling direction side can be lifted. For this reason, according to the resist developing apparatus 3 according to the third embodiment, as in the resist developing apparatus 2 according to the second embodiment, the semiconductor wafer is more than the conventional resist developing apparatus without increasing the amount of the developer to be ejected. It becomes possible to supply more developer to W.

  Further, according to the resist developing device 3 according to the third embodiment, the plurality of outer spray nozzles 62 are on the lower side of the plurality of inner spray nozzles 32, and include the first virtual surface P1 and the second virtual surface P2. The at least one outer spray nozzle 62 (all outer spray nozzles 62 in the third embodiment) among the plurality of outer spray nozzles 62 is disposed between and the developer toward the one side from the third virtual plane P3. The developer from the plurality of outer spray nozzles 62 is supplied to the back surface of the semiconductor wafer W floated by the plurality of inner spray nozzles 32. As a result, according to the resist developing apparatus 3 according to the third embodiment, it is possible to supply more developer to the back surface of the semiconductor wafer W and further reduce development defects on the back surface of the semiconductor wafer W. .

  The resist developing device 3 according to the third embodiment has the same configuration as that of the resist developing device 2 according to the second embodiment except for the configuration of the plurality of outer spray nozzles, and therefore the resist developing device according to the second embodiment. 2 has the corresponding effect.

  As mentioned above, although this invention was demonstrated based on said each embodiment, this invention is not limited to each said embodiment. The present invention can be implemented in various modes without departing from the spirit thereof, and for example, the following modifications are possible.

(1) The number, material, shape, position, size, angle, and the like of the constituent elements described in the above embodiments are exemplifications, and can be changed within a range not impairing the effects of the present invention.

(2) In the above embodiments, the plurality of inner spray nozzles have been described using the inner spray nozzles having the same configuration, but the present invention is not limited to this. For example, as shown in FIG. 9, only in the uppermost inner spray nozzle 72, one side of the developer spray range is set to the lower side in the direction of gravity toward the one side and the gravity side toward the other side. On the upper side in the direction, there may be an injection hole defined obliquely with respect to the rotation axis, and the other inner spray nozzle 76 may have a circular injection hole. Further, depending on the type and properties of the resist developing device, the inner spray nozzle having the injection holes can be used at an arbitrary place and in an arbitrary number.
This also applies to a plurality of outer spray nozzles.

(3) In each of the above embodiments, the description has been made using the inner spray nozzle and the outer spray nozzle having the injection holes having the slit shape, but the present invention is not limited to this. For example, as shown in FIG. 10, an injection hole having a shape in which one side of a circle is obliquely buried may be used, or as shown in FIG. 11, an injection hole having a stepped edge is used. Also good. Of course, the jetting range that defines the jetting range on one side of the jetting range of the developing solution obliquely with respect to the rotation axis is set so that one side is lower in the gravitational direction and the other side is upper in the gravitational direction. If there is, an injection hole having a shape other than the above can be used.
This also applies to the outer spray nozzle.

(4) The resist developing device of each of the above embodiments may include a nozzle up / down swing mechanism (not shown). The nozzle up-and-down swing mechanism is a mechanism that swings both or one of the plurality of inner spray nozzles and the plurality of outer spray nozzles up and down.
Although the period and phase of vertical oscillation can be determined as appropriate, the period of vertical oscillation is preferably a period that does not resonate with the revolution period of the carrier.
With this configuration, the semiconductor wafer can be uniformly developed regardless of where the semiconductor wafer is stored in the carrier.

(5) The resist developing device of each of the above embodiments may include a carrier vertical swing mechanism (not shown). The carrier up-and-down swing mechanism is a mechanism that swings the carrier up and down.
Although the period and phase of vertical oscillation can be determined as appropriate, the period of vertical oscillation is preferably a period that does not resonate with the revolution period of the carrier.
With this configuration, the semiconductor wafer can be uniformly developed regardless of where the semiconductor wafer is stored in the carrier.

(6) The resist developing apparatus of each of the above embodiments may have a function (not shown) for causing the carrier to rotate about the center of gravity of the semiconductor wafer housed in the cradle.
By adopting such a configuration, it becomes possible to make the amount of the developer applied to the peripheral portion of the semiconductor wafer uniform.

DESCRIPTION OF SYMBOLS 1, 2, 3 ... Resist developing apparatus, 10 ... Rotating body, 12 ... Turntable, 14 ... Support part, 20 ... Cradle, 30, 70 ... Inner nozzle complex, 32, 72, 76, 82, 92 ... Inner spray Nozzle, 32a ... injection range, 33, 43, 63, 83, 93 ... injection hole, 34, 44, 74 ... nozzle base, 40, 60 ... outer nozzle complex, 42, 62 ... outer spray nozzle, 50 ... chamber, DESCRIPTION OF SYMBOLS 100 ... Carrier, 110 ... Bottom surface part, 120 ... Side surface part, 130 ... Opening part, 140 ... Groove, A ... Rotating shaft, D ... Rotation direction, P1 ... 1st virtual surface, P2 ... 2nd virtual surface, P3 ... 1st 3 virtual planes, W ... semiconductor wafer, θ ... angle

Claims (8)

A resist developing apparatus that develops a resist formed on the semiconductor wafer by spraying a developer toward the carrier while revolving a carrier capable of storing a plurality of semiconductor wafers in parallel at predetermined intervals,
A rotating body capable of rotating around a rotation axis;
A cradle that is supported by the rotating body and capable of revolving along a predetermined rotation direction around the rotation axis while holding the carrier;
A plurality of inner spray nozzles disposed inside the track in the revolving motion of the carrier and spraying the developer from the inside of the track toward the outside of the track;
When an arbitrary component in the resist developing device is viewed from the side perpendicular to the rotation axis, when the upper side of the revolving motion is one side and the lower side of the revolving motion is the other side,
Among the plurality of inner spray nozzles, at least one inner spray nozzle is configured such that the one side of the spray range of the developer is lower in the gravitational direction toward the one side and the other side. A resist developing apparatus having an injection hole defined obliquely with respect to the rotation axis on the upper side in the gravity direction. The resist developing apparatus according to claim 1,
A straight line connecting the uppermost part and the lowermost part of the part defining the injection range on the one side of the injection hole when viewed from the injection direction of the developer of the inner spray nozzle having the injection hole; A resist developing apparatus, wherein an angle formed with a rotation axis is in a range of 30 ° to 85 °. In the resist developing apparatus according to claim 1 or 2,
The resist developing apparatus, wherein the spray hole has a slit shape. In the resist developing device according to any one of claims 1 to 3,
A resist developing apparatus, wherein all the inner spray nozzles constituting the plurality of inner spray nozzles have the ejection holes. In the resist developing apparatus according to any one of claims 1 to 4,
The resist developing device further includes a plurality of outer spray nozzles that are disposed outside the track in the revolving motion of the carrier and spray the developer from the outside of the track toward the inside of the track. A resist developing apparatus. The resist development apparatus according to claim 5,
The plurality of outer spray nozzles are on the lower side of the plurality of inner spray nozzles and are parallel to the rotation axis and include a spray direction of the plurality of inner spray nozzles and perpendicular to the first virtual surface. And is disposed between the second virtual plane including the rotation axis,
At least one spray nozzle among the plurality of outer spray nozzle, characterized by injecting the developer toward the side of the one than the third imaginary plane connecting the said and the plurality of outer spray nozzle rotating shaft A resist developing apparatus. A carrier holding step of storing the semiconductor wafer in a carrier capable of storing a plurality of semiconductor wafers in parallel at predetermined intervals, and holding the carrier in a cradle supported by a rotating body of a resist developing device;
Injecting the developer from the plurality of inner spray nozzles disposed inside the track in the revolving motion of the carrier toward the outside of the track while causing the carrier to revolve around the rotation axis of the rotating body. And a resist development step for developing the resist formed on the semiconductor wafer in this order,
When viewing the plurality of inner spray nozzles from a side perpendicular to the rotation axis, when the upper side of the revolving motion is one side and the lower side of the revolving motion is the other side,
In the resist development step, from one of the plurality of inner spray nozzles, the spray range on the one side of the spray range of the developer is made lower in the gravitational direction toward the one side. The resist developing method is characterized in that the developer is ejected in a direction inclined with respect to the rotation axis toward the upper side in the gravity direction toward the other side. A resist coating process for coating a resist on a plurality of semiconductor wafers;
A pattern transfer step of exposing the resist and transferring a predetermined pattern to the resist;
A resist pattern forming step of developing the resist to which a predetermined pattern has been transferred to form a resist pattern, in this order, and a method of manufacturing a semiconductor device,
The resist pattern forming step includes
A carrier holding step of storing the semiconductor wafer in a carrier capable of storing the plurality of semiconductor wafers in parallel at predetermined intervals and holding the carrier in a cradle supported by a rotating body of a resist developing device;
Injecting the developer from the plurality of inner spray nozzles disposed inside the track in the revolving motion of the carrier toward the outside of the track while causing the carrier to revolve around the rotation axis of the rotating body. A resist development step for developing the resist formed on the semiconductor wafer in this order,
When viewing the plurality of inner spray nozzles from a side perpendicular to the rotation axis, when the upper side of the revolving motion is one side and the lower side of the revolving motion is the other side,
In the resist development step, from one of the plurality of inner spray nozzles, the spray range on the one side of the spray range of the developer is made lower in the gravitational direction toward the one side. In addition, the resist is developed using a resist developing method in which the developer is sprayed with the developer defined obliquely with respect to the rotation axis on the upper side in the gravity direction toward the other side. Method.