TWI648767B - Substrate processing method and substrate processing apparatus - Google Patents

Abstract

The present invention includes a liquid film forming step of forming a liquid film of a cleaning liquid on a patterned pattern forming surface in a substrate, and a liquid accumulating portion forming step of supplying an organic solvent to the liquid film in the vicinity of a rotation center of the substrate to form an organic film a liquid accumulating portion of a solvent; wherein the substrate is rotated while the substrate is formed at a higher number of revolutions than the liquid accumulating portion forming step, and the organic solvent is supplied to the liquid accumulating portion to replace the cleaning liquid constituting the liquid film with an organic solvent; a step of applying a filler solution to a pattern forming surface covered with an organic solvent; and a filling step of sinking a filler contained in the filler solution applied to the pattern forming surface to fill the concave portion of the pattern .

Description

 Substrate processing method and substrate processing device  

The present invention relates to a substrate processing technique for processing a substrate having a patterned surface. In addition, the substrate includes a glass substrate for a liquid crystal display device, a semiconductor substrate, a glass substrate for a PDP (plasma display panel), a glass substrate for a photomask, a substrate for a color filter, and a substrate for a recording disk. Various substrates such as a substrate for a precision electronic device such as a substrate for a solar cell or a substrate for an electronic paper, a rectangular glass substrate, a flexible substrate for a thin film liquid crystal, or a substrate for an organic EL (e.g., an electroluminescence).

In the manufacturing step of an electronic component such as a semiconductor device or a liquid crystal display device, a step of forming a fine pattern by performing a process such as film formation and etching on the surface of the substrate is included. Here, in order to perform fine processing on the surface of the substrate well, it is necessary to keep the surface of the substrate clean and to clean the surface of the substrate depending on the situation. In addition, it is necessary to remove the cleaning liquid such as deionized water (DIW: De Ionized Water, hereinafter referred to as "DIW") adhering to the surface of the substrate after the completion of the cleaning treatment, and to dry the substrate.

An important problem in the drying process is that the substrate is not dried by collapse of the pattern formed on the surface of the substrate. As a method for solving this problem, sublimation drying technology has attracted attention. For example, in Japanese Laid-Open Patent Publication No. 2007-19161, a photoresist film which has been subjected to exposure treatment is supplied to a developer to dissolve a photoresist film applied on the surface of the substrate to form a pattern. The developer is removed by supplying a cleaning liquid to the surface of the substrate. However, at the end of the cleaning process, the polymer which is soluble in the cleaning liquid is supplied to the substrate while the cleaning liquid covers the surface of the substrate, and thereafter The polymer solution is dried. Thereby, the concave portion of the pattern (the gap between the convex portions formed by the photoresist film) is filled with the polymer. The polymer is then removed by selective plasma ashing.

However, in such a substrate processing technique, it is necessary to dry the polymer filled in the recess of the pattern. Also, polymer removal by plasma ashing must be performed. Therefore, when the polymer is filled in the concave portion and bubbles are mixed, the air bubbles may remain in the concave portion. In this case, in the execution of the aforementioned drying treatment or polymer removal treatment, the bubbles may be broken to cause the bubble marks to remain, or a part of the polymer may become particles. Thus, it is important to prevent bubbles from being mixed into the concave portion to improve the processing quality of the substrate.

The present invention has been made in view of the above-described problems, and an object of the present invention is to provide a substrate processing technique capable of filling a concave portion of a pattern while preventing bubbles from being mixed into a concave portion of a pattern formed on a surface of a substrate.

An aspect of the present invention is a substrate processing method, comprising: a liquid film forming step of forming a patterned pattern forming surface in a substrate to form a liquid film of a cleaning liquid; and a liquid accumulating portion forming step on the substrate a liquid accumulating portion that supplies an organic solvent to the liquid film in the vicinity of the center of rotation to form an organic solvent; and the replacing step of supplying the organic solvent to the liquid accumulating portion while rotating the substrate at a higher number of revolutions than the liquid accumulating portion forming step The cleaning liquid constituting the liquid film is replaced with an organic solvent; the coating step of applying the filler solution to the pattern forming surface covered by the organic solvent; and a filling step of applying the filler solution applied to the pattern forming surface The contained filler sinks and fills the recess of the pattern.

According to another aspect of the invention, there is provided a substrate processing apparatus comprising: a holding portion that holds a pattern forming surface on a substrate with a pattern facing upward and holds the substrate in a substantially horizontal posture; and a rotating portion that makes The substrate held by the holding portion rotates in a substantially horizontal plane; the cleaning liquid supply unit supplies the cleaning liquid toward the pattern forming surface; the organic solvent supply unit supplies the organic solvent to the pattern forming surface; and the filler solution supply unit faces the pattern a surface-feeding filler solution; and a control unit that supplies the cleaning liquid supplied from the cleaning liquid supply unit and the organic solvent supply unit while controlling the rotation of the substrate by the rotating unit The supply of the solvent and the supply of the filler solution by the filler solution supply unit are controlled; the control unit forms a liquid film on the pattern forming surface by the supply of the cleaning liquid, and supplies the liquid film to the liquid film near the rotation center of the substrate. Forming a liquid accumulating portion of an organic solvent by a solvent to increase the number of revolutions of the substrate and to pass the organic solvent toward the liquid accumulating portion The film constituting the cleaning liquid supply and replaced with an organic solvent, and the solution was applied to the filler covered with the pattern formed by the surface of the organic solvent solution containing the filler of the filler filled in the concave portion of the pattern.

In the invention configured as described above, in order to fill the concave portion of the pattern with a filler, the liquid film of the cleaning liquid on the substrate is replaced with an organic solvent, and the pattern forming surface of the substrate covered by the liquid film of the organic solvent is used. It is coated with a filler solution. Therefore, when bubbles are contained in the liquid film of the organic solvent, when the filler contained in the filler solution is filled in the concave portion of the pattern, air bubbles are mixed in the concave portion. In particular, when an organic solvent is supplied to the liquid film while the substrate is rotated, and the cleaning liquid is replaced with an organic solvent, if the supply of the organic solvent cannot be removed from the cleaning liquid, a so-called liquid-breaking occurs in the vicinity of the rotation center of the substrate. The phase enters the interface between the cleaning solution and the organic solvent. On the other hand, in the present invention, before the replacement treatment, an organic solvent is supplied to the liquid film of the cleaning liquid in the vicinity of the rotation center of the substrate to form a liquid accumulation portion of the organic solvent. That is, at the point of time when the replacement treatment is started, an organic solvent is already present near the center of rotation of the substrate. Therefore, the occurrence of liquid breakage can be effectively prevented. As a result, the filler can be filled in the concave portion while preventing the bubbles from being mixed into the concave portion of the pattern formed on the substrate.

1‧‧‧Substrate processing system

2‧‧‧Loading

3‧‧‧ Washing unit

4‧‧‧heat treatment unit

9‧‧‧Controller (Control Department)

31‧‧‧Rotating chuck (holding part)

32‧‧‧Sucking Department

33‧‧‧Rotary axis

34‧‧‧Rotary drive unit (rotary part)

35‧‧‧ Cover

36‧‧‧Nozzle

37‧‧‧ Lifting and Driving Department

38‧‧‧ cup

39‧‧‧Nozzle Drive Department

310‧‧‧Cleans supply department

311‧‧‧Clean solution supply port

331, 332‧‧‧Cylinder

333‧‧‧ snap protrusion

334‧‧‧ gas supply port

351‧‧‧ center hole

352‧‧‧Snap hole

353‧‧‧ Peripheral hole

361‧‧‧ base

362‧‧‧Protruding

A‧‧‧ center line

C‧‧‧ Carrier

CR‧‧‧Central Robot

G‧‧‧Inert gas

IR‧‧° indexing robot

L1‧‧‧ (cleaning liquid) liquid film

L2‧‧‧Liquid Accumulation Department

L3‧‧‧ (IPA) liquid film

L4‧‧‧ (filler solution) liquid film

L5‧‧‧ (filler solution) liquid film

L6‧‧‧washing liquid

Na, Nb‧‧‧ lower nozzle

Nc‧‧‧upper nozzle (cleaning solution supply unit)

Nd‧‧‧upper nozzle (organic solvent supply unit)

Ne‧‧‧Upper nozzle (filler solution supply unit)

Ng‧‧‧upper nozzle

Pc‧‧‧ close position

R1, R2, R3, R4, R4', R5‧‧‧ revolutions

S‧‧‧Washing processing unit (substrate processing unit)

S101~S112‧‧‧Steps

Sc‧‧‧ supply of liquid medicine

Sf‧‧‧Filling solution supply source (filler solution supply unit)

Sg‧‧‧Inert gas supply

Sr‧‧‧cleaning fluid supply source (cleaning fluid supply unit)

Ss‧‧‧ solvent supply source (organic solvent supply unit)

Sw‧‧‧Cleans supply

V1, V2, V3, V4, V5, V6, V7, V8, V9, V10‧‧‧ valves

W‧‧‧Substrate

Wb‧‧‧ back

Wc‧‧‧ recess

Wf‧‧‧ surface (pattern forming surface)

Wp‧‧‧ pattern

Z‧‧‧Down direction

Fig. 1 is a plan view schematically showing a substrate processing system equipped with a cleaning processing unit according to a first embodiment of the substrate processing apparatus of the present invention.

Fig. 2 is a partial cross-sectional view schematically showing an example of a cleaning processing unit provided in the substrate processing system of Fig. 1;

Fig. 3 is a partial cross-sectional view schematically showing an example of a cleaning processing unit provided in the substrate processing system of Fig. 1;

4 is a block diagram showing a portion of an electrical configuration of the substrate processing system of FIG. 1.

Fig. 5 is a partial cross-sectional view schematically showing an example of the lifting operation of the nozzle unit and the cover.

Fig. 6 is a flow chart showing an example of a substrate processing method executed by the substrate processing system of Fig. 1 using the cleaning processing unit of Figs. 2 and 3.

Fig. 7 is a timing chart showing an example of an operation performed in accordance with the substrate processing method of Fig. 6.

8(a) to 8(g) are schematic side views showing the state of substrate processing performed on the substrate by the substrate processing method of Fig. 6.

FIG. 9 is a timing chart showing an example of a substrate processing operation performed by the cleaning processing unit of the second embodiment of the substrate processing apparatus of the present invention.

Fig. 10 is a view showing the configuration of a cleaning processing unit according to a third embodiment of the substrate processing apparatus of the present invention.

Fig. 11 is a timing chart showing an example of a substrate processing operation performed by the cleaning processing unit shown in Fig. 10.

12(a) and 12(b) are schematic side views showing the state of the spin removal 2 process, the gasification assist process, and the ambient gas removal process performed by the washing processing unit shown in Fig. 10.

Fig. 1 is a plan view schematically showing a substrate processing system equipped with a cleaning processing unit as an embodiment of a substrate processing apparatus of the present invention. The substrate processing system 1 of FIG. 1 is a one-piece substrate processing system that performs various substrate processing such as a cleaning process and a heat treatment on a substrate W one at a time. Examples of the substrate W to be processed include a glass substrate for a liquid crystal display device, a semiconductor substrate, a glass substrate for a PDP, a glass substrate for a photomask, a substrate for a color filter, a substrate for a recording disk, and a solar cell. A substrate for a precision electronic device such as a substrate or an electronic paper substrate, a rectangular glass substrate, a flexible substrate for a thin film liquid crystal, or a substrate for an organic EL. In the example described below, the substrate W has a circular shape having a predetermined diameter of 100 mm to 400 mm, and has a surface Wf (FIG. 2) in which the uneven pattern Wp (FIG. 8) is formed, and a flat back surface. Wb (the opposite side of the surface Wf). However, the configuration of the substrate including the shape and the size is not limited to this example.

The substrate processing system 1 includes a plurality of mounting cassettes 2 for housing the substrate W, a plurality of cleaning processing units 3 for cleaning the substrate W, and a plurality of heat treatment units 4 for heat-treating the substrate W. Further, in order to transport the substrate W in the system, the substrate processing system 1 includes an indexing robot IR and a center robot CR. In the middle, the indexing robot IR transports the substrate W on the path between the loading cassette 2 and the central robot CR, and the central robot CR transports the substrate W on the path between the indexing robot IR and each of the processing units 3 and 4. . Further, the substrate processing system 1 includes a controller 9 composed of a computer, and the controller 9 controls each of the devices in accordance with a predetermined program, and performs substrate processing described below on the substrate W.

The loading cassette 2 holds a carrier C in which a plurality of substrates W are stacked in the vertical direction to be accommodated. In the loading cassette 2, each of the substrates W is housed in a state in which the surface Wf faces upward (that is, a state in which the back surface Wb faces downward). Further, if the indexing robot IR takes out the unprocessed substrate W from the carrier C of the loading cassette 2, the substrate W is transferred to the central robot CR, and the central robot CR carries the substrate W received from the indexing robot IR into the washing machine. Net processing unit 3.

After the substrate W to be loaded is washed (washing treatment), the cleaning processing unit 3 covers the surface Wf (coating treatment) of the substrate W including the pattern Wp with a liquid film of the filler solution. Here, the filler solution is a solution containing a filler as a solute. In this way, the cleaning processing unit 3 performs a substrate processing apparatus that performs not only the cleaning process but also other substrate processing such as a coating process. The configuration and operation of the washing processing unit 3 will be described in detail later.

When the processing of each substrate of the cleaning processing unit 3 is completed, the central robot CR carries out the substrate W from the cleaning processing unit 3, and carries the substrate W into the heat treatment unit 4. The heat treatment unit 4 has a heating plate (not shown), and heats (heat treatment) the substrate W carried by the center robot CR by the heating plate. By this heat treatment, the solvent evaporates from the liquid film of the filler solution covering the surface Wf of the substrate W, and is solidified between the solute of the filler solution, that is, the pattern Wp adjacent to the filler, that is, the concave portion Wc (Fig. 8) of the pattern. . Further, the heating method of the substrate W is not limited thereto, and for example, the substrate W may be heated by irradiating the substrate W with infrared rays or by applying hot air to the substrate W.

When the heat treatment in the heat treatment unit 4 is completed, the central robot CR transfers the substrate W carried out from the heat treatment unit 4 to the indexing robot IR, and the indexing robot IR accommodates the received substrate W in the carrier C on which the crucible 2 is loaded. As described above, the substrate W that has performed the substrate processing in the substrate processing system 1 is transported to the external filler removing device. The filler removing device removes the filler from the surface Wf of the substrate W between the patterns Wp by dry etching. Further, the method of removing the filler is not limited thereto, and may be, for example, a sublimation of a filler as disclosed in Japanese Laid-Open Patent Publication No. 2013-258272, or a plasma treatment as disclosed in Japanese Laid-Open Patent Publication No. 2011-124313. Wait to remove the filler.

2 and 3 are partial cross-sectional views schematically showing an example of a cleaning processing unit included in the substrate processing system of Fig. 1, and Fig. 4 is a block diagram showing a part of an electrical configuration of the substrate processing system of Fig. 1. . 2 and 3 are different in heights of the cover plate 35 and the nozzle unit 36 which will be described later. Moreover, in the figures of FIG. 2, FIG. 3, and the following, the vertical direction Z is shown suitably.

The cleaning processing unit 3 has a rotating chuck 31 that holds the substrate W carried by the center robot CR, and a suction unit 32 that supplies a negative pressure to the rotating chuck 31. The spin chuck 31 has a shape protruding downward from a cylindrical portion of a central portion of the lower surface of the disk, and is substantially rotationally symmetrical with respect to a center line A parallel to the vertical direction Z. On the upper surface of the spin chuck 31, a plurality of suction holes are opened, and the substrate W is horizontally placed on the upper surface of the spin chuck 31. In this manner, the spin chuck 31 comes into contact with the center portion of the back surface Wb of the substrate W from below in a state where the surface Wf of the substrate W faces upward. In this state, if the controller 9 outputs a suction command to the suction unit 32, the suction unit 32 supplies a negative pressure to the suction hole of the rotary chuck 31, and the substrate W is sucked and held by the rotary chuck 31. .

Further, the cleaning processing unit 3 includes a rotating shaft 33 that holds the rotating chuck 31, and a rotation driving unit 34 that is constituted by a motor and that rotates the rotating shaft 33, for example. The rotary shaft 33 has a shape in which the cylindrical portion 332 having a smaller diameter than the cylindrical portion 331 protrudes upward from a central portion of the upper surface of the cylindrical portion 331, and the cylindrical portions 331, 332 are substantially rotated with respect to the center line A. symmetry. Further, the rotating shaft 33 has an engaging projection 333 that protrudes upward on the upper surface of the cylindrical portion 331 and in the lateral direction of the cylindrical portion 332. When the controller 9 outputs a rotation command to the rotation driving unit 34, the rotation driving unit 34 supplies a rotational driving force (torque) to the rotating shaft 33, and the rotating shaft 33 and the rotating chuck 31 are integrally centered on the center line A. Rotate. As a result, the substrate W held by the spin chuck 31 also rotates around the center line A.

Further, the cleaning processing unit 3 has a cover plate 35 positioned below the substrate W held by the spin chuck 31. The cover plate 35 has a substantially circular outer shape centered on the center line A in a plan view, and a circular center hole 351 is opened in the center portion of the cover plate 35, and is open to the side of the center hole 351 of the cover plate 35. There is an engagement hole 352, and a peripheral hole 353 is opened in a peripheral portion of the cover plate 35. The cylindrical portion 332 of the rotating shaft 33 is inserted into the inner side of the center hole 351 of the cover plate 35, and the cover plate 35 faces the back surface Wb of the substrate W from the lower side than the cylindrical portion 332 of the rotating shaft 33.

The cover plate 35 is movable up and down along the vertical direction Z, and is selectively located at a position close to the position Pc (FIG. 2) close to the back surface Wb of the substrate W and the closer position Pc away from the back surface Wb of the substrate W. Any position in Pd (Figure 3). The engagement protrusion 333 of the rotary shaft 33 is engaged with the engagement hole 352 of the cover plate 35 in a state where the cover plate 35 is located at the separation position Pd. The cover plate 35 is rotatable in accordance with the rotation of the rotary shaft 33 by being engaged with the rotary shaft 33 in this manner. On the other hand, in a state in which the cover plate 35 is located close to the position Pc, the cover plate 35 is close to the back surface Wb of the substrate W via a gap of about 1 mm to 10 mm, and covers at least the periphery of the back surface Wb of the substrate W from below. unit. Further, in this approaching state, the engagement hole 352 of the cover plate 35 is disengaged from the engagement projection 333 of the rotary shaft 33, and the cover plate 35 is not stopped by the rotation of the rotary shaft 33.

Further, the cleaning processing unit 3 has a nozzle unit 36 that detaches the peripheral hole 353 of the cover plate 35 from below, and an elevation drive unit 37 that moves the nozzle unit 36 up and down. Further, the elevation drive unit 37 raises and lowers the cover 35 as the nozzle unit 36 moves up and down. Fig. 5 is a partial cross-sectional view schematically showing an example of the lifting operation of the nozzle unit and the cover. Each of the columns of "nozzle unit lowering position", "nozzle unit midway position", and "nozzle unit rising position" in Fig. 5 indicates a state in which the nozzle unit 36 is located at the lowering position, the intermediate position, and the rising position. Next, the cleaning processing unit 3 will be described with reference to FIGS. 2 to 4 and FIG.

As shown in FIG. 5, the nozzle unit 36 has a base portion 361 and two lower nozzles Na and Nb attached to the upper surface of the base portion 361. The base portion 361 has a projection portion 362 protruding toward the side direction at the bottom portion thereof. The two lower nozzles Na, Nb are arranged in the radial direction of the substrate W held by the spin chuck 31, and the nozzles on the lower side of the radial peripheral side are arranged. The Na is discharged toward the upper side obliquely upward toward the upper side, and the center side lower side nozzle Nb is discharged in parallel with the vertical direction Z in the radial direction.

The elevation drive unit 37 is constituted by, for example, an actuator, and moves the nozzle unit 36 up and down between the lowered position (Fig. 3) and the lowered position (Fig. 2) in accordance with a command from the controller 9. As shown in the column of "nozzle unit lowering position" of FIGS. 3 and 5, in a state where the nozzle unit 36 is at the lowered position, the nozzle unit 36 at the lowering position is located below the cover plate 35 which is located at the exit position Pd. As shown in the column of "the position of the nozzle unit midway" in Fig. 5, when the nozzle unit 36 rises from the lowered position and reaches the intermediate position, the nozzle unit 36 is engaged with the peripheral hole 353 of the cover plate 35 located at the exit position Pd. The protrusion 362 of the nozzle unit 36 abuts against the lower surface of the cover plate 35. When the nozzle unit 36 is further raised, the cover plate 35 rises with the nozzle unit 36, and the engagement of the cover plate 35 with the rotary shaft 33 is released. Further, as shown in the column of "nozzle unit ascending position" in FIGS. 2 and 5, the cover plate 35 reaches the approach position Pc as the nozzle unit 36 reaches the rising position.

In a state in which the cover plate 35 is located close to the position Pc, the upper surface of the base portion 361 is flush with the upper surface of the cover plate 35, and the lower nozzles Na, Nb are close to the substrate W held by the spin chuck 31. Back Wb. Further, the lower nozzle Na can discharge the processing liquid to the peripheral edge portion of the back surface Wb, and the lower nozzle Nb can discharge the processing liquid to the back surface Wb inside the lower nozzle Na.

Further, when the nozzle unit 36 is lowered from the rising position toward the lowered position, the respective operations are performed in the reverse order to the above. That is, the cover plate 35 is lowered from the approach position Pc toward the exit position Pd as the nozzle unit 36 is lowered. Further, when the cover plate 35 reaches the separation position Pd, it engages with the rotation shaft 33 and stops falling. The nozzle unit 36 is disengaged downward from the peripheral hole 353 of the cover plate 35 to reach the lowered position.

Returning to Fig. 2 to Fig. 4, the description will be continued. As shown in FIGS. 2 and 3, the cleaning processing unit 3 includes a cup 38 that surrounds the substrate W and the lid 35 held by the spin chuck 31 from the side direction and the lower side. Therefore, the treatment liquid scattered or dropped from the substrate W and the lid 35 is recovered by the cup 38. The cup 38 is raised and lowered between a rising position of FIG. 3 and a lowering position lower than the rising position by a lifting mechanism (not shown). Further, in a state where the cup 38 is placed at the lowered position, the substrate W is attached to and detached from the spin chuck 31, and various substrate processing is performed on the substrate W attached to the spin chuck 31 while the cup 38 is in the raised position. .

Further, the cleaning processing unit 3 is provided with an inert gas supply source Sg that supplies an inert gas such as nitrogen. Further, on the upper portion of the cylindrical portion 332 of the rotating shaft 33, the open gas supply port 334 is connected to the inert gas supply source Sg via the valve V1. Therefore, when the controller 9 opens the valve V1, the inert gas is supplied from the inert gas supply source Sg to the upper surface Wb of the substrate W held by the spin chuck 31 and the upper surface of the cover plate 35. Thereby, between the back surface Wb of the substrate W and the lid 35, the inert gas flows in the direction from the center of the substrate W toward the periphery. On the other hand, if the controller 9 closes the valve V1, the supply of the gas from the inert gas supply source Sg is stopped.

Further, the cleaning processing unit 3 includes three upper nozzles Nc, Nd, and Ne that discharge the processing liquid toward the surface Wf of the substrate W held by the spin chuck 31. Further, the cleaning processing unit 3 includes a nozzle driving unit 39 that causes the upper nozzle Nc to be opposed to the center of the surface Wf of the substrate W held by the spin chuck 31. The surface Wf of W moves between the retracted positions in which the horizontal direction retreats. Although the illustration is omitted, the cleaning processing unit 3 also includes the same nozzle driving unit 39 for the upper nozzles Nd and Ne. Then, in response to an instruction from the controller 9, each of the nozzle driving units 39 moves the upper nozzles Nc, Nd, and Ne, respectively.

In the cleaning processing unit 3, the processing liquid upper side nozzles Na and Nb are discharged toward the back surface Wb of the substrate W, and the processing liquid upper side nozzles Nc, Nd, and Ne are supplied to the surface Wf of the substrate W. Further, the cleaning processing unit 3 includes various supply sources Sc, Sr, Ss, and Sf that supply the processing liquid to the nozzles Na to Ne.

The chemical liquid supply source Sc supplies, for example, a cleaning liquid containing dilute hydrofluoric acid (DHF) or ammonia water as a chemical liquid. The chemical solution supply source Sc is connected to the upper nozzle Nc via valves V2 and V3 connected in series. Therefore, when the controller 9 opens the valve V2 and the valve V3, the chemical liquid supplied from the chemical liquid supply source Sc is discharged from the upper nozzle Nc, and if the controller 9 closes either of the valve V2 and the valve V3, The discharge of the liquid medicine of the upper nozzle Nc is stopped.

The cleaning liquid supply source Sr supplies pure water such as DIW (De-ionized Water), carbonated water, ozone water, or hydrogen water as a cleaning liquid. The cleaning liquid supply source Sr is connected to the upper nozzle Nc via a valve V4 and a valve V3 that are connected in series. Therefore, when the controller 9 opens the valve V4 and the valve V3, the cleaning liquid supplied from the cleaning liquid supply source Sr is discharged from the upper nozzle Nc, and the controller 9 closes either of the valve V4 and the valve V3 from the upper side. The discharge of the cleaning liquid of the nozzle Nc is stopped. Further, the cleaning liquid supply source Sr is connected to the lower nozzle Nb via the valve V5 (FIG. 5). Therefore, when the controller 9 opens the valve V5, the cleaning liquid supplied from the cleaning liquid supply source Sr is discharged from the lower nozzle Nb, and when the controller 9 closes the valve V5, the cleaning liquid is discharged from the lower nozzle Nb. It stops.

The solvent supply source Ss supplies an organic solvent used for the replacement treatment for replacing the cleaning liquid on the substrate W. In the present embodiment, isopropyl alcohol (IPA; Isopropyl Alcohol) is used as the organic solvent. The solvent supply source Ss is connected to the lower nozzle Na via a valve V6. Therefore, when the controller 9 opens the valve V6, the solvent supplied from the solvent supply source Ss is discharged from the lower nozzle Na, and when the controller 9 closes the valve V6, the discharge from the solvent of the lower nozzle Na is stopped. Further, the solvent supply source Ss is connected to the upper nozzle Nd via the valve V7. Therefore, when the controller 9 opens the valve V7, the solvent supplied from the solvent supply source Ss is discharged from the upper nozzle Nd, and when the controller 9 closes the valve V7, the discharge from the solvent of the upper nozzle Nd is stopped.

The filler solution supply source Sf is supplied as a filler solution as a solution in which a filler of a polymer such as an acrylic resin is dissolved in water. The filler solution supply source Sf is connected to the upper nozzle Ne via a valve V8. Therefore, if the controller 9 opens the valve V8, the filler solution supplied from the filler solution supply source Sf is discharged from the upper nozzle Ne, and if the controller 9 closes the valve V8, the filler solution from the upper nozzle Ne Spit will stop.

Fig. 6 is a flow chart showing an example of a substrate processing method executed by the substrate processing system of Fig. 1 using the cleaning processing unit of Figs. 2 and 3. Further, Fig. 7 is a timing chart showing an example of an operation performed in accordance with the substrate processing method of Fig. 6. In addition, FIG. 8 is a side view schematically showing a state of substrate processing performed on the substrate by the substrate processing method of FIG. 6. This flow chart is executed by the control of the controller 9. Further, during execution of the flowchart encompassing FIG. 6, nitrogen gas is continuously supplied from the gas supply port 334 to between the substrate W and the cap plate 35.

When the unprocessed substrate W is carried into the upper surface of the spin chuck 31 of the cleaning processing unit 3 by the central robot CR (step S101), the spin chuck 31 adsorbs and holds the substrate W. Further, the cover plate 35 located at the exit position Pd is raised to the approach position Pc. Next, the spin chuck 31 starts to rotate, and the number of revolutions of the substrate W is accelerated from zero to the number of revolutions R4. Next, the chemical liquid processing of step S102 is started in a state where the cap plate 35 is located at the approach position Pc.

In the chemical treatment, the upper nozzle is positioned to face the central portion of the surface of the Nc substrate W, and DHF is started in a state where the substrate W is rotated at a constant number of revolutions R4 (for example, 800 rpm). The supply from the upper nozzle Nc toward the substrate W (time t1). Further, during the period from the time t1 to the time t2, the DHF continuously supplied to the central portion of the surface Wf of the substrate W is extended to the periphery of the surface Wf of the substrate W by the centrifugal force generated by the rotation of the substrate W. The surface Wf of the substrate W is treated with a chemical solution using DHF.

When the chemical liquid processing is completed at time t2, the upper nozzle Nc stops the supply of DHF, and starts the cleaning process (step S103). In the cleaning process, the number of revolutions of the substrate W is maintained constant after the number of revolutions R4 is maintained from the time t2 to the time t3, and the number of revolutions R4 is decelerated to the number of revolutions R1 from the time t3 to the time t4. Here, the number of revolutions R1 is set to be the number of revolutions of the liquid film of the cleaning liquid which can maintain the paddle-like shape formed as follows, and the number of revolutions of zero or more, in particular, in the present embodiment, the number of revolutions R1 Set to zero. In the state in which the upper nozzle Nc is opposed to the central portion of the surface Wf of the substrate W, the cleaning liquid is continuously supplied to the surface Wf of the substrate W from the time t2 to the time t4.

During the period from the time t2 to the time t3, since the substrate W is rotated at a relatively fast number of revolutions R4, the cleaning liquid supplied to the central portion of the surface Wf of the substrate W is rapidly expanded to the surface Wf of the substrate W by the centrifugal force. The circumference of the circumference, and scattered from the circumference. Further, the DHF supplied to the surface Wf of the substrate W in the previous chemical liquid treatment is replaced with a cleaning liquid. On the other hand, during the period from time t3 to time t4, as the number of revolutions of the substrate W is decelerated, the thickness of the liquid film of the cleaning liquid formed on the surface Wf of the substrate W increases.

By performing such a washing treatment (= chemical treatment + washing treatment), the surface Wf of the substrate W is washed with DHF and then covered with a liquid film of the cleaning liquid. On the other hand, during the execution of the cleaning process, the back surface Wb of the substrate W is covered by the cover 35 located at the approach position Pc, and the adhesion of the DHF or the cleaning liquid toward the back surface Wb of the substrate W is suppressed. In particular, since nitrogen gas is continuously supplied between the back surface Wb of the substrate W and the upper surface of the cap plate 35 in parallel with the cleaning process, a gas flow of nitrogen gas from the center of rotation of the substrate W toward the periphery of the substrate W is generated. The lower surface side of the substrate W. As a result, the DHF or the cleaning liquid can be more reliably suppressed from the surface Wf of the substrate W to the back surface Wb by the flow of nitrogen gas.

When the cleaning process is completed at time t4, the liquid coating process is started (step S104). That is, at time t4, when the number of revolutions of the substrate W becomes the number of revolutions R1, that is, when the number of revolutions becomes zero, the controller 9 controls the rotational position at which the spin chuck 31 is stopped based on the output of the encoder constituting the motor of the rotary drive unit 34. Thereby, the rotation chuck 31 stops at the rotational position where the engagement projection 333 of the rotary chuck 31 opposes the engagement hole 352 of the cover plate 35 in the vertical direction Z. Thus, if the rotation of the substrate W is stopped, the cover 35 is lowered from the approach position Pc to the exit position Pd to be engaged with the spin chuck 31.

Until the time t5, the upper nozzle Nc continues to supply the cleaning liquid to the surface Wf of the substrate W after the completion of the cleaning process, and the liquid-repellent treatment is performed. The supply speed of the cleaning liquid in the liquid coating treatment is the same as the cleaning speed of the cleaning liquid. Further, when the time t5 is reached, the upper nozzle Nc stops the supply of the cleaning liquid. That is, in the liquid-repellent treatment, the cleaning liquid is continuously supplied to the surface Wf of the substrate W decelerated by the number of revolutions R4 from the time t4 to the time t5. Thus, as shown in the column (a) of FIG. 8, the liquid-coated liquid film L1 formed of a large amount of the cleaning liquid covers the surface Wf of the substrate W, whereby the evaporation accompanying the cleaning liquid can be suppressed. The resulting surface tension causes the pattern Wp to collapse. In particular, in the present embodiment, since the liquid-repellent treatment can be performed while the rotation of the substrate W is stopped, the surface Wf of the substrate W can be fully maintained in a sufficiently wet state, and the pattern Wp can be more reliably suppressed. collapse.

When the liquid-repellent treatment is completed at time t5, after the supply of the cleaning liquid from the upper nozzle Nc is stopped, the upper nozzle Nc is retracted from above the central portion of the surface of the substrate W. At the same time, the liquid accumulation process is performed (step S105). In other words, in a state where the number of revolutions of the substrate W is maintained at the number of revolutions R1, the upper nozzle Nd and the upper nozzle Nc are replaced at time t5, and moved to be positioned above the center portion of the surface of the substrate W. Further, as shown in the column (b) of FIG. 8, the IPA is supplied from the positioned upper side nozzle Nd to the central portion of the surface Wf of the substrate W as an example of the "organic solvent" of the present invention. Thereby, the liquid accumulation portion L2 of IPA is formed in the central portion of the liquid film L1 of the cleaning liquid. In this embodiment, the liquid accumulation process is continued until time t6, and the liquid accumulation portion L2 is grown to a predetermined size.

When the liquid accumulation process is completed at time t6, the spin chuck 31 starts to rotate, and the replacement process of step S106 and the filler application process of step S107 are sequentially performed. Further, since the cover plate 35 is engaged with the spin chuck 31 during the execution of the replacement process and the filler application process, the cover plate 35 also rotates in accordance with the rotation of the substrate W.

In the replacement process (step S106), in the state where the supply of the IPA from the upper nozzle Nd continues, the number of revolutions of the substrate W is accelerated from zero (number of revolutions R1) to the time between time t6 and time t7. After the number R2, it is maintained at the number of revolutions R2 until time t8. The number of revolutions R2 is higher than the number of revolutions R1, and the number of revolutions of the liquid (cleaning liquid, IPA) present on the surface Wf of the substrate W from the periphery of the surface Wf of the substrate W can be made, in particular, in the present embodiment, The number of revolutions R2 is set to the number of revolutions R4, for example, set to 300 rpm. In this way, the IPA that is continuously supplied to the central portion of the surface Wf of the substrate W is expanded to the periphery of the surface Wf of the substrate W by the centrifugal force, and the cleaning liquid is removed from the surface Wf of the substrate W. Furthermore, in the present embodiment, the supply amount of IPA per unit time in the execution of the liquid accumulation process (step S105) and the replacement process (step S106) is constant.

Here, focusing on the liquid amount of IPA existing on the surface Wf of the substrate W, the period of the liquid accumulation process from time t5 to time t6 is constant in the state where the number of revolutions of the substrate is zero (number of revolutions R1). The supply speed is supplied to the surface Wf to the IPA. At this time, since the centrifugal force is not generated, as shown in FIG. 7, the supplied IPA is accumulated on the surface Wf at a relatively high speed, and the liquid accumulation portion of the IPA is gradually enlarged to the peripheral portion. The substrate is rotated by the number of revolutions R2 from the time t7 (the concentration of the IPA is substantially the same at the time when the surface Wf of the substrate becomes substantially the same).

At time t7, since the amount of scattering of the mixed liquid from the surface Wf temporarily increases, the amount of IPA on the surface Wf decreases. Thereafter, during the period from time t7 to time t8, the supply speed of the IPA and the speed of decrease of the mixed liquid scattered from the surface Wf are equalized, and the surface Wf is maintained in a state in which the fixed amount of IPA is accumulated.

By supplying the IPA in such a supply amount distribution, the cleaning liquid covering the surface Wf of the substrate W can be replaced with the liquid film L3 of the IPA as shown in the column (c) of FIG. 8 while preventing the so-called liquid breaking. . In other words, since the liquid accumulating portion L2 is already formed at the time point when the substrate W starts to rotate, that is, at the time t6, the gas phase does not enter the interface between the cleaning liquid and the IPA (organic solvent) in the replacement process, that is, the so-called Broken liquid. Therefore, it is possible to surely prevent the air bubbles from being mixed between the plurality of patterns Wp formed on the surface Wf of the substrate W, that is, the concave portion Wc, and as a result, the concave portion Wc can be filled with the IPA without mixing the bubbles.

When the replacement processing is completed at time t8, the upper nozzle Nd is retracted from the upper side of the center portion of the substrate W after the supply of the IPA from the upper nozzle Nd is stopped. Further, at the same time, the filler coating process (step S107) is performed. In the filler coating process, the upper nozzle Ne and the upper nozzle Nd are replaced and positioned above the central portion of the surface of the substrate W, and the number of revolutions of the substrate W is rapidly increased from the number of revolutions R2 during the period from time t8 to time t9. After the acceleration to the number of revolutions R5, the number of revolutions R5 is maintained until time t10. Here, the number of revolutions R5 is a number of revolutions faster than the number of revolutions R2. In particular, in the present embodiment, the number of revolutions R5 is set to be equal to or greater than the number of revolutions R4 (for example, 1500 rpm to 2000 rpm). Further, during the period from the time t8 to the time t10, the filler solution is supplied to the surface Wf of the upper side nozzle Ne facing the substrate W with respect to the central portion of the surface of the substrate W. Further, the supply of the filler solution is performed by discharging the filler solution one shot at a time from the upper nozzle Ne. Thus, the filler solution supplied to the center of the surface Wf of the base plate W is expanded by the centrifugal force on the liquid film L3 of the IPA. As a result, as shown in the column (d) of FIG. 8, the liquid film L4 of the filler solution is deposited on the liquid film L3 of the IPA on the surface Wf of the substrate W.

Incidentally, in this embodiment, the cover 35 is rotated at a high speed in parallel with the execution of the replacement process and the filler coating process. The high-speed rotation of the cover plate 35 is performed by removing the cleaning liquid dropped from the substrate W to the cover plate 35 during the liquid-coating process by the centrifugal force.

When the application of the filler is completed at time t10, the upper nozzle Ne stops the supply of the filler solution, and the upper nozzle Ne is retracted from above the central portion of the surface of the substrate W. At the same time, the spin off 1 processing is started (step S108). In the rotation removal 1 processing, after the period from the time t10 to the time t11, the number of revolutions of the substrate W is maintained at the number of revolutions R5, and from the time t11 to the time t12, the number of revolutions of the substrate W is decelerated to the number of revolutions R1 (in This embodiment is zero). Thereby, as shown in the column (e) of Fig. 8, the excess filler solution is removed from the surface Wf of the substrate W so that the thickness of the liquid film L4 of the filler solution is adjusted to a desired thickness. At this time, the controller 9 controls the rotational position at which the spin chuck 31 is stopped based on the output of the encoder constituting the motor of the rotary drive unit 34. Thereby, the rotary chuck 31 is stopped at the rotational position of the peripheral edge hole 353 of the cover plate 35 in the vertical direction Z opposite to the nozzle unit 36. Thus, when the rotation of the substrate W and the lid 35 is stopped, the lid 35 rises from the exit position Pd to the approach position Pc as the nozzle unit 36 starts to rise.

When the rotation removal 1 processing is completed at time t12, the filler sinking process is started (step S109). In other words, the number of revolutions of the substrate W and the cover 35 is the number of revolutions R1, and after zero in the present embodiment, it waits for a predetermined period of time. During the standby period of the predetermined time, the filler solution deposited on the liquid film L3 of the IPA will sink, and on the other hand, the IPA will float. As a result, as shown in the column (f) of Fig. 8, the pattern Wp formed on the surface Wf of the substrate W is covered by the liquid film L4 of the filler solution, so that the adjacent patterns Wp, that is, The recess Wc is filled with a filler solution.

When the filler sinking process is completed at time t13, the rotation of the substrate W is started, and the number of revolutions of the substrate W is accelerated from zero to the number of revolutions R4. Then, at a predetermined time until time t14, the substrate W is rotated at a constant number of revolutions R4, thereby performing a rotation removal 2 process of removing the IPA and the excess filler solution from the surface Wf of the substrate W (step S110). As a result, as shown in the column (g) of FIG. 8, the adjacent pattern Wp, that is, the concave portion Wc is filled with the liquid film L5 having the filler solution having the same thickness as the height of the pattern Wp.

If the rotation removal 2 processing is completed at time t14, the edge cleaning processing is executed (step S111). In the edge cleaning process, the number of revolutions of the substrate W is maintained at the number of revolutions R3 after being decelerated to the number of revolutions R3 at the number of revolutions R4. Then, the lower nozzle Na and the lower nozzle Nb discharge the processing liquid to the back surface Wb of the substrate W which is rotated at a constant number of revolutions R3. Specifically, the lower nozzle Na discharges IPA (organic solvent) toward the periphery of the back surface Wb of the substrate W. Thereby, when the filler solution is applied, the filler solution adhering to the periphery of the back surface Wb of the substrate W is removed. Further, the lower nozzle Nb discharges the cleaning liquid toward the vicinity of the periphery of the back surface Wb of the substrate W. The cleaning liquid thus discharged is washed away from the back surface Wb of the substrate W while moving toward the periphery along the back surface Wb of the substrate W by centrifugal force.

When the edge cleaning process is completed at time t15, the rotation of the substrate W is stopped, and the cover 35 is lowered. Here, the same control as the control of the stop position of the spin chuck 31 described above is performed, and the lowered cover 35 is engaged with the spin chuck 31. Then, the spin chuck 31 releases the suction of the substrate W, and the center robot CR carries out the substrate W from the cleaning processing unit 3 (step S112).

As described above, in the present embodiment, immediately before the replacement process by IPA is performed, the liquid accumulation portion L2 of IPA is formed in the central portion of the liquid film L1 of the cleaning liquid. Therefore, the liquid accumulating portion L2 is present at a point in time at which the number of revolutions of the substrate W to be subjected to the replacement process is increased, so that the liquid breakage can be surely prevented. That is, the IPA can be filled in the concave portion Wc without the bubbles being mixed between the adjacent patterns Wp, that is, the concave portions Wc. As a result, the filler can be satisfactorily filled in the concave portion Wc of the pattern by a series of processes (steps S107 to S110) performed in the cleaning processing unit 3 thereafter. Further, in the execution of the polymer removal treatment by the heat treatment unit 4 or the polymer removal treatment by the filler removal device (not shown), it is possible to prevent the bubble marks from remaining, or the polymer. A part becomes a defect of a particle.

As described above, in the present embodiment, the surface Wf of the substrate W corresponds to the "pattern forming surface" of the present invention. Further, the cleaning process (step S103), the liquid coating process (step S104), the liquid accumulation process (step S105), the replacement process (step S106), the filler coating process (step S107), and the filler sinking process (step S109) Each of the "flushing step", the "liquid film forming step", the "liquid accumulating portion forming step", the "replacement step", the "coating step", and the "filling step" of the present invention are respectively examples. Further, the number of revolutions R4 and R1 respectively correspond to an example of the "first revolution number" and the "second revolution number" of the present invention. Further, the spin chuck 31, the rotation drive unit 34, and the controller 9 correspond to an example of the "holding portion", the "rotating portion", and the "control portion" of the present invention, respectively. In addition, the cleaning liquid supply source Sr and the upper nozzle Nc function as the "cleaning liquid supply unit" of the present invention, and the solvent supply source Ss and the upper nozzle Nd function as the "organic solvent supply unit" of the present invention, and are filled. The agent solution supply source Sf and the upper nozzle Ne function as the "filler solution supply unit" of the present invention.

It is to be noted that the present invention is not limited to the embodiments described above, and various modifications other than the above-described embodiments may be made without departing from the spirit thereof. For example, the size of the liquid accumulating portion L2 formed in the liquid film L1 of the cleaning liquid can be adjusted by changing the time t6 of the liquid accumulation process (step S105), the amount of supply of the IPA, and the like. In particular, from the viewpoint of more reliably preventing the occurrence of liquid breakage, for example, as shown in FIG. 9, the time at which the number of revolutions of the substrate W is increased is delayed from the time t6 to the time t6' and the IPA is supplied. The method of increasing the amount is configured (second embodiment).

Further, in the above embodiment, the IPA and the excess filler solution are removed from the surface Wf of the substrate W by the spin removal process 2, that is, the completion step, but in the completion step, the rotation may be removed. (2) The gasification auxiliary treatment (gas supply step) and the environmental gas removal treatment (cleaning liquid supply step) are performed together (third embodiment). Hereinafter, a third embodiment of the present invention will be described with reference to Figs. 10 to 12 .

Fig. 10 is a view showing the configuration of a cleaning processing unit according to a third embodiment of the substrate processing apparatus of the present invention. The portion of the cleaning processing unit 3 that differs greatly from the cleaning processing unit 3 (Figs. 2 and 3) of the first embodiment is provided with a portion for supplying the inert gas upper side nozzle Ng toward the surface Wf of the substrate W, and A portion in which the cleaning liquid supply unit 310 of the cleaning liquid is supplied to the center portion of the back surface Wb of the substrate W (the main surface of the substrate W on the side opposite to the pattern forming surface) is provided, and other configurations are basically the same as those of the first embodiment. The net processing unit 3 is the same. Therefore, the same reference numerals will be given to the same components, and the description will be omitted, and the different points will be described in detail.

In the third embodiment, the upper nozzle Ng is further provided in addition to the upper nozzles Nc, Nd, and Ne, and the nozzle driving unit 39 (see FIG. 2) is provided to the upper nozzle Ng. Further, the upper nozzle Ng receives the command from the controller 9 by the nozzle driving unit 39, and moves between the gas supply position and the standby position. The gas supply position means a position away from the central portion of the surface Wf of the substrate W toward the upper side, and the standby position means a position away from the cup 38.

As shown in FIG. 10, the upper nozzle Ng is connected to the inert gas supply source Sg via the valve V9. Therefore, when the controller 9 opens the valve V9, the inert gas is supplied from the inert gas supply source Sg toward the central portion of the surface Wf of the substrate W held by the spin chuck 31. Thereby, the inert gas flows along the surface Wf of the substrate W from the center of the substrate W toward the periphery (refer to a broken line arrow in the column (b) of Fig. 12 to be described later). On the other hand, if the controller 9 closes the valve V9, the supply of the gas from the inert gas supply source Sg is stopped.

Further, in the cleaning liquid supply unit 310, the cleaning liquid supply port 311 opened in the upper portion of the cylindrical portion 332 of the rotating shaft 33 is connected to the cleaning liquid supply source Sw via the valve V10 as shown in Fig. 10 . . Therefore, when the controller 9 opens the valve V10, the cleaning liquid (for example, deionized water such as DIW, carbonated water, ozone water, or hydrogen water, or an organic solvent such as IPA) is held in rotation from the cleaning liquid supply port 311. The central portion of the back surface Wb of the substrate W of the chuck 31 is supplied. The cleaning liquid thus supplied flows through the back surface Wb of the substrate W from the center of the substrate W toward the peripheral edge, and is collected in the cup 38. On the other hand, when the controller 9 closes the valve V10, the supply of the cleaning liquid from the cleaning liquid supply source Sw is stopped.

In the cleaning processing unit 3 configured as described above, the substrate processing method shown in Fig. 6 is executed in the same manner as in the first embodiment. However, in the third embodiment, in parallel with the rotation removal 2 processing, as shown in FIGS. 11 and 12, the vaporization assisting process and the ambient gas removing process are performed. The other processing is the same as that of the first embodiment.

Fig. 11 is a timing chart showing an example of a substrate processing operation performed by the cleaning processing unit shown in Fig. 10. Moreover, FIG. 12 is a side view schematically showing a state in which the spin removal processing 2, the vaporization assisting process, and the ambient gas removing process are performed by the cleaning processing unit shown in FIG. In the third embodiment, as in the first embodiment, a series of processes of steps S101 to S109 are performed, and as shown in the column (a) of FIG. 12, the pattern Wp formed on the surface Wf of the substrate W is filled. The liquid film L4 of the solution solution is covered so that the filler solution is filled between the adjacent patterns Wp, that is, the concave portion Wc.

Here, in the same manner as in the first embodiment, only the spin removal 2 treatment may be performed. However, depending on the characteristics of the filler solution (viscosity, volatility, surface tension, solubility of the solvent and the filler, etc.), a filler may be present. The filling rate of the solution to the concave portion Wc may become uneven in the plane of the substrate W. That is, the centrifugal force generated by the high-speed rotation of the substrate W becomes larger as the center portion of the substrate W becomes larger toward the peripheral portion, and in particular, the filler solution that enters the concave portion Wc in the peripheral portion is self-concave due to the centrifugal force. The situation in which Wc is discharged. Therefore, there is a case where the filling rate at the peripheral portion is lowered. When the state in which such a filling rate unevenness remains is performed, for example, the baking treatment is performed, the stress acting on the concave portion Wc due to the shrinkage of the filler is biased to the peripheral portion. Further, when the ashing treatment is performed, stress acts on the center side and the peripheral side in the concave portion Wc. Here, since the filling rate of the concave portion Wc in the central portion of the substrate W is uniform, the stress on the center side is substantially the same as the stress on the peripheral side. On the other hand, since the filling rate of the concave portion Wc in the peripheral portion of the substrate W is low, the stress on the center side is larger than the stress on the peripheral side, and the pattern Wp is inclined in the outer circumferential direction. Thus, in order to prevent the pattern from collapsing more satisfactorily, it is important to further uniformize the filling ratio in the plane of the surface Wf of the substrate W.

Therefore, in the third embodiment, as described above, in addition to the spin removal 2 process, the gasification assisting process and the ambient gas removing process are additionally performed. In the third embodiment, as shown in Fig. 11, the number of revolutions R4' of the rotation removal 2 process is reduced to a number of revolutions lower than the number of revolutions R4 of the first embodiment. That is, it is set so as to satisfy the following inequality: R1 < R4' < R4.

Therefore, it is possible to effectively prevent the filling rate of the peripheral portion from being greatly lowered as compared with the central portion.

Further, in parallel with the rotation removal 2 process, the controller 9 issues a movement command to the nozzle driving unit 39 so that the upper nozzle Ng is positioned at the gas supply position, and opens the valve V9 in one step to supply the inert gas toward the central portion of the surface Wf of the substrate W. Thereby, as shown in the column (b) of FIG. 12, the inert gas G flows from the center of the substrate W toward the peripheral edge along the surface Wf of the substrate W. Therefore, the solvent contained in the filler solution is dissolved in the inert gas and discharged to the outer peripheral side of the substrate W. As a result, the dry state in the plane of the substrate W can be made uniform.

Here, although the inert gas containing the solvent exists in the ambient gas in the cup 38, if the solvent dissolved in the inert gas adheres to the substrate W, the solvent becomes fine particles. Although the inert gas containing the solvent exists in the ambient gas in the cup 38, if it can be efficiently recovered to the cup 38, the environmental gas removal process described below is not required. However, in order to reliably prevent the generation of fine particles, in the third embodiment, the environmental gas removal process is performed in parallel. That is, the controller 9 opens the valve V10 and supplies the cleaning liquid L6 toward the central portion of the back surface Wb of the substrate W. Thereby, the cleaning liquid L6 flows from the center of the substrate W toward the peripheral edge along the back surface Wb of the substrate W, thereby preventing the solvent in which the inert gas is dissolved from adhering to the back surface Wb of the substrate W. Further, the above-described cleaning liquid L6 is scattered toward the outer periphery of the substrate W to dissolve the solvent, and is discharged to the outside of the cup 38. Thus, the solvent can be surely removed from the ambient gas of the cup 38, and the adhesion of the solvent to the substrate W can be surely prevented.

As described above, according to the third embodiment, it is possible to reliably prevent the air bubbles from being mixed into the concave portion Wc as in the first embodiment, and it is possible to improve the uniformity of the filling rate of the filler solution in the surface of the substrate W. As a result, the filler can be filled into the concave portion more satisfactorily.

In the third embodiment, the gasification assisting treatment and the environmental gas removing treatment are used in combination with the spin removal treatment. However, when the inert gas containing the solvent is reliably removed from the atmosphere in the cup 38, Only use gasification auxiliary treatment together. Further, in the third embodiment, the substrate processing method for performing a series of processes (steps S101 to S109) before the execution of the rotation removal 2 process is additionally applied with the gasification assisting process and the environmental gas removing process, but the gasification assisting process The additional application of the environmental gas removal treatment is not limited thereto. That is, as shown in FIG. 12, all the substrate processing methods for performing the process of rotating the substrate W and removing the excess filler solution from the surface Wf of the substrate W after performing the sinking treatment of the filler may be performed only. Application of gasification auxiliary treatment, or application of gasification auxiliary treatment and environmental gas removal treatment.

Further, the discharge method of the cleaning liquid toward the back surface Wb of the substrate W is not limited to the above-described embodiment. For example, the vacuum chuck may hold the central portion of the back surface Wb of the substrate W and scan the nozzle back surface Wb from the back surface. The backside scanning nozzle is scanned while discharging the cleaning liquid in a region other than the central portion.

Further, in the above-described embodiment, the number of revolutions R1 of the substrate W is set to zero, but the value of the number of revolutions R1 is not limited thereto, as long as the liquid film L1 which can maintain the liquid-like state of the cleaning liquid is not reached. The number can be any. Moreover, it is not necessary to match the number of revolutions in the liquid-repellent treatment (step S104) with the number of revolutions in the liquid accumulation process (step S105), for example, the number of revolutions at the time of liquid-coating treatment is set to be greater than zero. In the case, the number of revolutions during the liquid accumulation process may be set to be lower than the above number of revolutions, for example, set to zero.

Further, as the various supply sources Sc, Sr, Ss, Sf, Sg, and Sw, the device may be used when there is a resource device capable of supplying the target processing liquid or gas.

Further, the treatment for removing the cured filler from the substrate W is performed by an external filler removing device different from the substrate processing system 1. However, the substrate processing system 1 may also be provided with a filler removal function. For example, the filler may also be removed by sublimation in the heat treatment unit 4.

The present invention is applicable to all substrate processing techniques for performing a replacement process for filling a concave portion of an organic solvent before being filled in a concave portion of a pattern formed on a pattern forming surface of a substrate.

Claims (7)

 A substrate processing method comprising: a liquid film forming step of forming a patterned pattern forming surface in a substrate to form a liquid film of a cleaning liquid; and a liquid accumulating portion forming step at a rotation center of the substrate a liquid accumulating portion that supplies an organic solvent to the liquid film to form the organic solvent, and a replacement step of supplying the organic substance to the liquid accumulating portion while rotating the substrate at a higher number of revolutions than the liquid accumulating portion forming step a solvent for replacing the cleaning liquid constituting the liquid film with the organic solvent; a coating step of applying a filler solution to the pattern forming surface covered with the organic solvent; and a filling step of coating The filler contained in the above-mentioned filler solution on the pattern forming surface is sunk and filled in the concave portion of the pattern.    The substrate processing method according to claim 1, further comprising a rinsing step of rinsing the pattern forming surface by supplying the cleaning liquid to the pattern forming surface while rotating the substrate at a first number of revolutions The liquid film forming step includes a step of decelerating the number of revolutions of the substrate to a second number of revolutions less than the first number of revolutions after the rinsing step, and the liquid accumulating portion forming step includes rotating the substrate The number is set to be equal to or less than the second rotation number.    The substrate processing method according to claim 2, wherein the liquid accumulating portion forming step stops the rotation of the substrate and supplies the organic solvent.    The substrate processing method according to any one of claims 1 to 3, further comprising a completion step of remaining the filler in the pattern by rotating the substrate after the filling step The concave portion discharges the organic solvent and the excess filler solution from the pattern forming surface.    The substrate processing method according to claim 4, wherein the completion step includes a gas supply step of supplying an inert gas toward a central portion of the pattern forming surface in parallel with the rotation of the substrate.    The substrate processing method according to claim 5, wherein the completion step includes a step of supplying a cleaning liquid to the central portion of the main surface of the substrate opposite to the pattern forming surface in parallel with the rotation of the substrate .    A substrate processing apparatus including: a holding portion that holds the substrate in a substantially horizontal posture with a pattern forming surface on which a pattern is formed in a substrate; and a rotating portion that is held by the holding portion The substrate is rotated in a substantially horizontal plane; the cleaning liquid supply unit supplies the cleaning liquid to the pattern forming surface; the organic solvent supply unit supplies the organic solvent to the pattern forming surface; and the filler solution supply unit forms the pattern And a control unit that supplies the cleaning liquid to the cleaning liquid supply unit and the organic solvent supply unit while controlling the rotation of the substrate by the rotating unit The supply of the organic solvent and the supply of the filler solution by the filler solution supply unit are controlled, and the control unit forms a liquid film on the pattern forming surface by the supply of the cleaning liquid. The organic solvent is supplied to the liquid film in the vicinity of the rotation center of the substrate to form the above-mentioned a liquid accumulating portion of the organic solvent, wherein the number of revolutions of the substrate is increased, and the cleaning liquid constituting the liquid film is replaced with the organic solvent by supplying the organic solvent to the liquid accumulating portion, and the filler solution is added The filler is contained in the pattern forming surface covered by the organic solvent, and the filler contained in the filler solution is filled in the concave portion of the pattern.