JP7144975B2 - Substrate processing method and substrate processing apparatus - Google Patents

Description

The present invention relates to a substrate processing method and substrate processing apparatus for processing a substrate. Substrates to be processed include, for example, semiconductor wafers, liquid crystal display device substrates, FPD (Flat Panel Display) substrates such as organic EL (Electroluminescence) display devices, optical disk substrates, magnetic disk substrates, and magneto-optical disk substrates. Substrates, substrates for photomasks, ceramic substrates, substrates for solar cells, etc. are included.

In the manufacturing process of semiconductor devices, various contaminants adhering to substrates, residues such as processing solutions and resists used in previous processes, various particles, etc. (hereinafter collectively referred to as "objects to be removed") are removed. Therefore, a washing step is performed.
In the cleaning process, a cleaning liquid such as deionized water (DIW) is generally supplied to the substrate to remove the object to be removed by the physical action of the cleaning liquid. Patent Literature 1 listed below describes a method of removing an object to be removed from a substrate by supplying DIW to the surface of the substrate.

Japanese Patent Application Laid-Open No. 2004-260099 JP 2014-197717 A

When an object to be removed is removed from a substrate with a cleaning liquid, the higher the flow velocity of the cleaning liquid in the direction along the surface of the substrate, the greater the energy the object to be removed receives from the cleaning liquid. .
The flow velocity of the cleaning liquid flowing on the surface of the substrate is affected by the viscosity of the cleaning liquid. Specifically, the cleaning liquid flowing on the surface of the substrate is pulled by the substrate due to the viscosity of the cleaning liquid. Therefore, the flow velocity of the cleaning liquid in the direction along the surface of the substrate is smaller near the surface of the substrate than at a position sufficiently distant from the surface of the substrate.

Since the object to be removed is extremely minute, when the object to be removed is removed from the surface of the substrate by the method described in Patent Document 1, the object to be removed receives the cleaning liquid near the surface of the substrate. Therefore, the object to be removed may not be able to receive sufficient energy from the cleaning liquid.
Therefore, in Patent Document 2, a treatment liquid containing a solute and a volatile solvent is supplied to the upper surface of a substrate, and after forming a treatment film by solidifying or curing the treatment liquid, the treatment film is dissolved. Techniques for removal have been proposed.

In this technique, the object to be removed is separated from the substrate when the treatment liquid is solidified or hardened to form a treatment film. Then, the removed object to be removed is held in the treatment film. Then, a dissolution processing liquid is supplied to the surface of the substrate. This dissolves the treated film on the substrate. Then, the object to be removed is removed from the upper surface of the substrate by receiving the flow of the dissolving treatment liquid along the surface of the substrate.

However, in the method of Patent Document 2, the object to be removed floats in the dissolution treatment liquid and reattaches to the substrate by dissolving the treatment film with the dissolution treatment liquid. Such reattached removal target cannot receive sufficient energy from the dissolving treatment liquid flowing on the surface of the substrate. Therefore, there is a possibility that the object to be removed cannot be efficiently removed from the surface of the substrate.
SUMMARY OF THE INVENTION Accordingly, one object of the present invention is to provide a substrate processing method and a substrate processing apparatus capable of efficiently removing an object to be removed existing on the surface of a substrate.

According to one embodiment of the present invention, there are provided a processing liquid supply step of supplying a processing liquid to the surface of a substrate, and a process liquid supplied to the surface of the substrate is brought into contact with an object to be removed existing on the surface of the substrate. an object-to-be-removed enlarging step of enlarging the apparent size of the object-to-be-removed by solidifying or hardening it in a state; from the surface of the substrate, and removing the object to be removed from the substrate while maintaining the state in which the apparent size of the object to be removed is enlarged.

According to this method, the apparent size of the object to be removed is enlarged by solidifying or hardening the treatment liquid in contact with the object to be removed. The apparent size of the object to be removed is the overall size of the object to be removed and the other solid when the object to be removed is integrated with the other solid. Objects to be removed whose apparent size is enlarged reach a position farther from the surface of the substrate than objects to be removed of their original size. Therefore, the energy received by the object to be removed from the stripping liquid flowing on the surface of the substrate can be increased. Therefore, the object to be removed is easily separated from the substrate.

Then, the object to be removed is peeled off from the substrate with its apparent size enlarged, and removed from the surface of the substrate together with the peeling liquid. Therefore, even after the object to be removed is separated from the surface of the substrate, it is possible to maintain a state in which the energy received by the object to be removed from the stripping liquid flowing on the surface of the substrate is increased. Therefore, the object to be removed can be rapidly removed to the outside of the substrate together with the stripping liquid.

As a result, the object to be removed existing on the surface of the substrate can be removed efficiently.
In one embodiment of the present invention, the step of enlarging the object to be removed is such that the apparent size of the object to be removed is larger than the thickness of the boundary layer in the flow of the stripping solution in the thickness direction of the substrate. Enlarging the apparent size of the object is included.
At a position closer to the surface of the substrate than the thickness of the boundary layer in the thickness direction of the substrate, the flow velocity of the stripping liquid is reduced due to the viscosity of the stripping liquid. At a position farther from the surface of the substrate than the thickness of the boundary layer in the thickness direction of the substrate, the influence of the viscosity of the stripping liquid on the flow velocity can be sufficiently suppressed. Therefore, if the apparent size of the object to be removed is larger than the thickness of the boundary layer in the flow of the stripping liquid, the energy that the object to be removed receives from the stripping liquid flowing on the surface of the substrate can be sufficiently increased. Therefore, the object to be removed can be easily peeled off from the substrate, and can be quickly removed to the outside of the substrate together with the peeling liquid.

In one embodiment of the present invention, the object-to-be-removed enlarging step solidifies or cures the treatment liquid supplied to the surface of the substrate to form a treatment film holding the object to be removed on the surface of the substrate. A process film forming step is included, and the removing step includes a step of peeling off the object to be removed together with the process film from the surface of the substrate.
According to this method, the treatment film can be formed on the surface of the substrate by solidifying or hardening the treatment liquid. Since the object to be removed is held by the treatment film, the apparent size of the object to be removed can be enlarged to the size of the treatment film. By peeling off the object to be removed together with the treated film, the object to be removed can be removed from the surface of the substrate while maintaining the state in which the apparent size is enlarged to the size of the treated film. Therefore, it is possible to sufficiently increase the energy that the object to be removed receives from the flow of the stripping liquid.

In one embodiment of the present invention, the removing step includes a through-hole forming step of partially dissolving the treated film with the removing liquid to form through-holes in the treated film. Therefore, it becomes easier for the stripping liquid to reach the vicinity of the surface of the substrate. Therefore, the stripping liquid can be applied to the interface between the processed film and the substrate to efficiently strip the processed film from the substrate. On the other hand, since the portion of the treatment film other than the portion where the through holes are formed is not dissolved in the stripping liquid and is maintained in a solid state, the apparent size of the object to be removed can be kept enlarged. Therefore, the energy received by the removal target from the flow of the stripping liquid can be sufficiently increased while the removal target is efficiently separated from the surface of the substrate.

In one embodiment of the present invention, the removing step further includes a stripping solution entering step of allowing the stripping solution to enter between the treatment film and the surface of the substrate through the through-holes. Therefore, it is possible to more efficiently separate the treated film from the surface of the substrate by allowing the stripping solution to act on the interface between the treated film and the substrate.
In one embodiment of the present invention, the treatment liquid has a solute having a first component and a second component having lower solubility in the stripping liquid than the first component, and a solvent that dissolves the solute. The treated film forming step includes forming the treated film having a first solid formed of the first component and a second solid formed of the second component.

According to this method, the first component has higher solubility in the stripping solution than the second component. Therefore, the first solid formed by the first component dissolves more easily in the stripping solution than the second solid formed by the second component. Therefore, by supplying the stripping liquid to the surface of the substrate, the stripping liquid mainly dissolves the first solid and reaches the vicinity of the surface of the substrate. Therefore, the stripping liquid can be applied to the interface between the treatment film and the substrate. On the other hand, most of the second solid remains in a solid state without being dissolved in the stripping solution. Therefore, the state in which the object to be removed is held by the second solid, that is, the state in which the apparent size of the object to be removed is enlarged can be maintained.

As a result, the object to be removed can be efficiently separated from the surface of the substrate, and the energy received by the object to be removed from the stripping liquid flowing on the surface of the substrate can be sufficiently increased.
In one embodiment of the invention, the content of the second component in the treatment liquid is greater than the content of the first component in the treatment liquid.
According to this method, compared to a configuration in which the content of the second component in the treatment liquid is smaller than the content of the first component in the treatment liquid, the portion of the treatment film dissolved by the stripping solution is reduced. can do. Therefore, it is possible to reduce the number of substances to be removed that separate from the treatment film due to the partial dissolution of the treatment film. Therefore, since most of the objects to be removed can be removed from the surface of the substrate together with the treated film, the objects to be removed can be efficiently removed from the substrate while suppressing reattachment to the substrate.

In one embodiment of the invention, the content of the second component in the treatment liquid is less than the content of the first component in the treatment liquid.
According to this method, compared with the structure in which the content of the second component in the treatment liquid is larger than the content of the first component in the treatment liquid, the portion of the treatment film that is dissolved by the stripping solution is increased. can do. Therefore, the treated film can be split into relatively fine film pieces. Since the treated film is split into relatively fine film pieces, the film pieces are likely to float under the force of the flow of the stripping liquid, and are easily discharged outside the substrate along with the flow of the stripping liquid. Therefore, the object to be removed can be efficiently removed from the substrate together with the film to be treated.

In one embodiment of this invention, said first component and said second component are synthetic resins.
One embodiment of the present invention comprises a processing liquid supply unit that supplies a processing liquid to the surface of a substrate, a solid formation unit that solidifies or hardens the processing liquid, and a stripping liquid supply unit that supplies a stripping liquid to the surface of the substrate. and a controller for controlling the processing liquid supply unit, the solid formation unit, and the stripping liquid supply unit.

a processing liquid supply step of supplying the processing liquid from the processing liquid supply unit to the surface of the substrate; Thus, the apparent size of an object to be removed existing on the surface of the substrate is increased by increasing the apparent size of the object to be removed, and supplying the stripping solution from the stripping solution supply unit to the surface of the substrate. removing the object to be removed from the surface of the substrate and removing the object to be removed from the substrate while maintaining the enlarged apparent size of the object to be removed. programmed to do so.

According to this configuration, the apparent size of the object to be removed is enlarged by solidifying or hardening the treatment liquid in contact with the object to be removed. Objects to be removed whose apparent size is enlarged reach a position farther from the surface of the substrate than objects to be removed of their original size. Therefore, it is possible to increase the energy that the object to be removed receives from the stripping liquid flowing on the surface of the substrate. Therefore, the object to be removed is easily separated from the substrate.

Then, the object to be removed is peeled off from the substrate with its apparent size enlarged, and removed from the surface of the substrate together with the peeling liquid. Therefore, even after the object to be removed is separated from the surface of the substrate, it is possible to maintain a state in which the energy received by the object to be removed from the stripping liquid flowing on the surface of the substrate is increased. Therefore, the object to be removed can be rapidly removed to the outside of the substrate together with the stripping liquid.

As a result, the object to be removed existing on the surface of the substrate can be removed efficiently.
In one embodiment of the present invention, the controller, in the object-to-be-removed enlarging step, makes the boundary layer thicker than the thickness of the boundary layer in the flow of the stripping solution along the surface of the substrate in the thickness direction of the substrate. It is programmed to increase the apparent size of said object to be removed.

At a position closer to the surface of the substrate than the thickness of the boundary layer in the thickness direction of the substrate, the flow velocity of the stripping liquid is reduced due to the viscosity of the stripping liquid. At a position farther from the surface of the substrate than the thickness of the boundary layer in the thickness direction of the substrate, the influence of the viscosity of the stripping liquid on the flow velocity can be sufficiently suppressed. Therefore, if the apparent size of the object to be removed is larger than the thickness of the boundary layer in the flow of the stripping liquid, the energy that the object to be removed receives from the stripping liquid flowing on the surface of the substrate can be sufficiently increased. Therefore, the object to be removed can be easily peeled off from the substrate, and can be quickly removed to the outside of the substrate together with the peeling liquid.

In one embodiment of the present invention, the controller solidifies or hardens the processing liquid supplied to the surface of the substrate to form a treatment film holding the removal object on the substrate in the removal object enlarging step. It is programmed to perform a process film forming step for forming on the surface, and to peel off the object to be removed together with the process film from the surface of the substrate in the removal step.

According to this configuration, the treatment film can be formed on the surface of the substrate by solidifying or hardening the treatment liquid. Since the object to be removed is held by the treatment film, the apparent size of the object to be removed can be enlarged to the size of the treatment film. By peeling off the object to be removed together with the treated film, the object to be removed can be removed from the surface of the substrate while maintaining the state in which the apparent size is enlarged to the size of the treated film. Therefore, it is possible to sufficiently increase the energy that the object to be removed receives from the stripping liquid flowing on the surface of the substrate.

In one embodiment of the present invention, the controller is programmed to perform a through-hole forming step of forming through-holes in the treated film by partially dissolving the treated film in the stripping solution in the removing step. It is Therefore, it becomes easier for the stripping liquid to reach the vicinity of the surface of the substrate. Therefore, the stripping liquid can be applied to the interface between the processing film and the substrate W to efficiently strip the processing film from the substrate. On the other hand, since the portion of the treated film other than the portion where the through holes are formed is not dissolved in the stripping solution and is maintained in a solid state, the apparent size of the object to be removed is enlarged even in the stripping solution. can be maintained. Therefore, the energy received by the removal target from the flow of the stripping liquid can be sufficiently increased while the removal target is efficiently separated from the surface of the substrate.

In one embodiment of the present invention, the controller is programmed to allow the stripper to enter between the treatment film and the surface of the substrate through the through-holes in the removing step. Therefore, it is possible to more efficiently separate the treated film from the surface of the substrate by allowing the stripping solution to act on the interface between the treated film and the substrate.
In one embodiment of the present invention, the treatment liquid has a solute having a first component and a second component having lower solubility in the stripping liquid than the first component, and a solvent that dissolves the solute. and the controller is programmed to form the treated film including a first solid formed by the first component and a second solid formed by the second component in the treated film forming step. there is

According to this configuration, the first component has higher solubility in the stripping liquid than the second component. Therefore, the first solid formed by the first component dissolves more easily in the stripping solution than the second solid formed by the second component. Therefore, by supplying the stripping liquid to the surface of the substrate, the stripping liquid mainly dissolves the first solid and reaches the vicinity of the surface of the substrate. Therefore, the stripping liquid can be applied to the interface between the processing film and the substrate to efficiently strip the processing film holding the object to be removed from the surface of the substrate. On the other hand, most of the second solid remains in a solid state without being dissolved in the stripping liquid, so that the object to be removed can maintain its apparent size enlarged.

As a result, the object to be removed can be efficiently separated from the surface of the substrate, and the energy received by the object to be removed from the stripping liquid flowing on the surface of the substrate can be sufficiently increased.
In one embodiment of the invention, the content of the second component in the treatment liquid is greater than the content of the first component in the treatment liquid.
According to this configuration, compared to a configuration in which the content of the second component in the treatment liquid is less than the content of the first component in the treatment liquid, the portion of the treatment film that is dissolved by the stripping solution is reduced. can do. Therefore, it is possible to reduce the number of substances to be removed that separate from the treatment film due to the partial dissolution of the treatment film. Therefore, since most of the objects to be removed can be removed from the surface of the substrate together with the treated film, the objects to be removed can be efficiently removed from the substrate while suppressing reattachment to the substrate.

In one embodiment of the invention, the content of the second component in the treatment liquid is less than the content of the first component in the treatment liquid.
According to this configuration, compared to a configuration in which the content of the second component in the treatment liquid is larger than the content of the first component in the treatment liquid, the portion of the treatment film that is dissolved by the stripping solution is increased. can do. Therefore, the treated film can be split into relatively fine film pieces. Since the treated film is split into relatively fine film pieces, the film pieces are likely to float under the force of the flow of the stripping liquid, and are easily discharged outside the substrate along with the flow of the stripping liquid. Therefore, the object to be removed can be efficiently removed from the substrate together with the film to be treated.

In one embodiment of this invention, said first component and said second component are synthetic resins .

FIG. 1 is a schematic plan view showing the layout of a substrate processing apparatus according to one embodiment of the invention. FIG. 2 is a schematic partial cross-sectional view showing a schematic configuration of a processing unit provided in the substrate processing apparatus. FIG. 3 is a block diagram showing the electrical configuration of the main part of the substrate processing apparatus. FIG. 4 is a flowchart for explaining an example of substrate processing by the substrate processing apparatus. FIG. 5A is a schematic diagram for explaining the processing liquid supply step (step S5) of the substrate processing. FIG. 5B is a schematic diagram for explaining the state of the thinning step (step S6) of the substrate processing. FIG. 5C is a schematic diagram for explaining the state of the heating step (step S7) of the substrate processing. FIG. 5D is a schematic diagram for explaining the state of the buffering step (step S8) of the substrate processing. FIG. 5E is a schematic diagram for explaining the state of the removal step (step S9) of the substrate processing. FIG. 5F is a schematic diagram for explaining the state of the second rinsing step (step S10) of the substrate processing. FIG. 5G is a schematic diagram for explaining the state of the second organic solvent supply step (step S11) of the substrate processing. FIG. 5H is a schematic diagram for explaining the state of the spin-drying step (step S12) of the substrate processing. FIG. 6A is a schematic cross-sectional view for explaining the state of the vicinity of the substrate surface after the thinning step (step S6). FIG. 6B is a schematic cross-sectional view for explaining the state of the vicinity of the substrate surface after the heating step (step S7). FIG. 6C is a schematic cross-sectional view for explaining the state near the substrate surface during execution of the removal step (step S9). FIG. 6D is a schematic cross-sectional view for explaining the state near the substrate surface during execution of the removing step (step S9). FIG. 7 is a schematic diagram for comparing the thickness of the boundary layer and the size of the object to be removed in the flow of stripping liquid along the surface of the substrate. FIG. 8 is a graph showing the relationship between the flow velocity of the stripping liquid flowing along the surface of the substrate and the thickness of the boundary layer.

Embodiments of the present invention will be described below with reference to the accompanying drawings.
FIG. 1 is a schematic plan view showing the layout of a substrate processing apparatus 1 according to one embodiment of the invention.
The substrate processing apparatus 1 is a single-wafer type apparatus that processes substrates W such as silicon wafers one by one. In this embodiment, the substrate W is a disk-shaped substrate.

The substrate processing apparatus 1 includes a plurality of processing units 2 for processing substrates W with a fluid, a load port LP on which a carrier C containing a plurality of substrates W to be processed by the processing units 2 is mounted, and a load port LP. , and a controller 3 for controlling the substrate processing apparatus 1 .
The transport robot IR transports the substrate W between the carrier C and the transport robot CR. The transport robot CR transports the substrate W between the transport robot IR and the processing unit 2 . A plurality of processing units 2 have, for example, the same configuration. Although details will be described later, the processing fluid supplied to the substrate W in the processing unit 2 includes a chemical liquid, a rinse liquid, a processing liquid, a stripping liquid, a heat medium, an inert gas, and the like.

Each processing unit 2 includes a chamber 4 and a processing cup 7 disposed within the chamber 4 and performs processing on the substrate W within the processing cup 7 . The chamber 4 is formed with an entrance (not shown) for loading the substrate W into the chamber 4 and unloading the substrate W from the chamber 4 . The chamber 4 is provided with a shutter unit (not shown) that opens and closes this entrance.

FIG. 2 is a schematic diagram for explaining a configuration example of the processing unit 2. As shown in FIG. The processing unit 2 further includes a spin chuck 5 , a facing member 6 , a first moving nozzle 8 , a second moving nozzle 9 , a third moving nozzle 10 , a central nozzle 11 and a bottom nozzle 12 .
The spin chuck 5 holds the substrate W horizontally and rotates it around a vertical rotation axis A1 (vertical axis) passing through the center of the substrate W. As shown in FIG. The spin chuck 5 includes multiple chuck pins 20 , a spin base 21 , a rotating shaft 22 and a spin motor 23 .

The spin base 21 has a disk shape along the horizontal direction. A plurality of chuck pins 20 for gripping the peripheral edge of the substrate W are arranged on the upper surface of the spin base 21 at intervals in the circumferential direction of the spin base 21 . The spin base 21 and the plurality of chuck pins 20 constitute a substrate holding unit that holds the substrate W horizontally. A substrate holding unit is also called a substrate holder.

The rotation shaft 22 extends vertically along the rotation axis A1. The upper end of the rotating shaft 22 is connected to the center of the lower surface of the spin base 21 . The spin motor 23 applies rotational force to the rotating shaft 22 . As the rotating shaft 22 is rotated by the spin motor 23, the spin base 21 is rotated. Thereby, the substrate W is rotated around the rotation axis A1. The spin motor 23 is an example of a substrate rotation unit that rotates the substrate W around the rotation axis A1.

The facing member 6 faces the substrate W held by the spin chuck 5 from above. The opposing member 6 is formed in a disc shape having a diameter substantially equal to or larger than that of the substrate W. As shown in FIG. The facing member 6 has a facing surface 6a that faces the upper surface of the substrate W (upper surface). The facing surface 6a is arranged above the spin chuck 5 and substantially along the horizontal plane.
A hollow shaft 60 is fixed to the opposing member 6 on the side opposite to the opposing surface 6a. A communication hole 6b is formed in a portion of the opposing member 6 that overlaps the rotation axis A1 in a plan view, vertically penetrating the opposing member 6 and communicating with the internal space 60a of the hollow shaft 60 .

The facing member 6 blocks the atmosphere in the space between the facing surface 6a and the upper surface of the substrate W from the atmosphere outside the space. Therefore, the opposing member 6 is also called a blocking plate.
The processing unit 2 further includes an opposing member lifting unit 61 that drives the opposing member 6 to move up and down. The opposing member elevating unit 61 can position the opposing member 6 at any position (height) from the lower position to the upper position. The lower position is the position where the facing surface 6a is closest to the substrate W within the movable range of the facing member 6. As shown in FIG. The upper position is the position where the facing surface 6a is farthest away from the substrate W within the movable range of the facing member 6 .

The opposing member elevating unit 61 includes, for example, a ball screw mechanism (not shown) coupled to a support member (not shown) that supports the hollow shaft 60, and an electric motor (not shown) that provides driving force to the ball screw mechanism. including
The processing cup 7 includes a plurality of guards 71 for receiving the liquid splashing outward from the substrate W held by the spin chuck 5, a plurality of cups 72 for receiving the liquid guided downward by the plurality of guards 71, and a plurality of cups 72 for receiving the liquid. It includes a cylindrical outer wall member 73 surrounding a guard 71 and a plurality of cups 72 .

This embodiment shows an example in which two guards 71 (first guard 71A and second guard 71B) and two cups 72 (first cup 72A and second cup 72B) are provided.
Each of the first cup 72A and the second cup 72B has the form of an upwardly open annular groove.

The first guard 71A is arranged to surround the spin base 21 . The second guard 71B is arranged outside the first guard 71A in the radial direction of rotation of the substrate W so as to surround the spin base 21 .
Each of the first guard 71A and the second guard 71B has a substantially cylindrical shape, and the upper end of each guard 71A, 71B is slanted inward toward the spin base 21 .

The first cup 72A receives liquid guided downward by the first guard 71A. The second cup 72B is formed integrally with the first guard 71A and receives liquid guided downward by the second guard 71B.
The processing unit 2 includes a guard lifting unit 74 that lifts and lowers the first guard 71A and the second guard 71B separately. The guard elevating unit 74 elevates the first guard 71A between the lower position and the upper position. The guard lifting unit 74 lifts and lowers the second guard 71B between the lower position and the upper position.

Liquid splashing from the substrate W is received by the first guard 71A when both the first guard 71A and the second guard 71B are positioned at the upper position. When the first guard 71A is positioned at the lower position and the second guard 71B is positioned at the upper position, liquid splashing from the substrate W is received by the second guard 71B.
The guard lifting unit 74 includes, for example, a first ball screw mechanism (not shown) coupled to the first guard 71A, a first motor (not shown) that provides driving force to the first ball screw, and a second guard mechanism. It includes a second ball screw mechanism (not shown) coupled to 71B and a second motor (not shown) that provides driving force to the second ball screw mechanism.

The first moving nozzle 8 is an example of a chemical liquid supply unit that supplies (discharges) a chemical liquid toward the upper surface of the substrate W held by the spin chuck 5 .
The first moving nozzle 8 is moved horizontally and vertically by a first nozzle moving unit 36 . The first moving nozzle 8 can move between a center position and a home position (retracted position). The first moving nozzle 8 faces the center of rotation of the upper surface of the substrate W when positioned at the center position. The rotation center of the upper surface of the substrate W is the position where the upper surface of the substrate W intersects with the rotation axis A1.

When positioned at the home position, the first moving nozzle 8 does not face the upper surface of the substrate W, and is positioned outside the processing cup 7 in plan view. The first moving nozzle 8 can approach the upper surface of the substrate W or retreat upward from the upper surface of the substrate W by moving in the vertical direction.
The first nozzle moving unit 36 includes, for example, a rotating shaft (not shown) along the vertical direction, an arm (not shown) coupled to the rotating shaft and extending horizontally, and an arm (not shown) that raises and lowers and rotates the rotating shaft. and a pivot drive unit (not shown) for moving.

The rotary shaft driving unit swings the arm by rotating the rotary shaft around a vertical rotary axis. Further, the rotary shaft drive unit moves the arm up and down by moving the rotary shaft vertically. A first moving nozzle 8 is fixed to the arm. The first moving nozzle 8 moves horizontally and vertically as the arm swings and moves up and down.
The first moving nozzle 8 is connected to a chemical pipe 40 that guides the chemical. When the chemical liquid valve 50 interposed in the chemical liquid pipe 40 is opened, the chemical liquid is continuously discharged downward from the first moving nozzle 8 .

The chemical liquid discharged from the first moving nozzle 8 includes, for example, sulfuric acid, acetic acid, nitric acid, hydrochloric acid, hydrofluoric acid, ammonia water, hydrogen peroxide water, organic acid (eg, citric acid, oxalic acid, etc.), organic alkali (eg, TMAH: tetramethylammonium hydroxide, etc.), a surfactant, and a corrosion inhibitor. Examples of chemical solutions in which these are mixed include SPM solution (sulfuric acid/hydrogen peroxide mixture) and SC1 solution (ammonia-hydrogen peroxide mixture). .

The second moving nozzle 9 is an example of a processing liquid supply unit that supplies (discharges) the processing liquid toward the upper surface of the substrate W held by the spin chuck 5 .
The second moving nozzle 9 is moved horizontally and vertically by a second nozzle moving unit 37 . The second moving nozzle 9 can move between the center position and the home position (retracted position). The second moving nozzle 9 faces the rotation center of the upper surface of the substrate W when positioned at the center position.

When positioned at the home position, the second moving nozzle 9 does not face the upper surface of the substrate W and is positioned outside the processing cup 7 in plan view. The second moving nozzle 9 can approach the upper surface of the substrate W or retreat upward from the upper surface of the substrate W by moving in the vertical direction.
The second nozzle moving unit 37 has the same configuration as the first nozzle moving unit 36 . That is, the second nozzle moving unit 37 includes, for example, a rotating shaft (not shown) along the vertical direction, an arm (not shown) coupled to the rotating shaft and the second moving nozzle 9 and extending horizontally, and a rotating shaft driving unit (not shown) for raising and lowering and rotating the rotating shaft.

The second moving nozzle 9 is connected to a processing liquid pipe 41 that guides the processing liquid. When the processing liquid valve 51 interposed in the processing liquid pipe 41 is opened, the processing liquid is continuously discharged downward from the second moving nozzle 9 .
The processing liquid discharged from the second moving nozzle 9 contains a solute and a solvent. This treatment liquid is solidified or hardened by volatilization of at least part of the solvent. The processing liquid solidifies or cures on the substrate W to form a processing film that retains objects to be removed such as particles existing on the substrate W. FIG.

Here, "solidification" refers to solidification of the solute due to, for example, forces acting between molecules or atoms as the solvent volatilizes (evaporates). "Curing" refers to the hardening of the solute due to chemical changes such as polymerization and cross-linking, for example. Thus, "solidifying or hardening" refers to the solute "hardening" due to various factors.
The solute in the treatment liquid discharged from the second moving nozzle 9 contains the first component and the second component. The amount (content) of the first component contained in the treatment liquid is less than the amount (content) of the second component contained in the treatment liquid.

The first component and the second component are, for example, synthetic resins having different properties. The solvent contained in the treatment liquid discharged from the second moving nozzle 9 may be any liquid that dissolves the first component and the second component.
Examples of synthetic resins used as solutes include acrylic resins, phenolic resins, epoxy resins, melamine resins, urea resins, unsaturated polyester resins, alkyd resins, polyurethanes, polyimides, polyethylene, polypropylene, polyvinyl chloride, polystyrene, and polyacetic acid. Vinyl, polytetrafluoroethylene, acrylonitrile butadiene styrene resin, acrylonitrile styrene resin, polyamide, polyacetal, polycarbonate, polyvinyl alcohol, modified polyphenylene ether, polybutylene terephthalate, polyethylene terephthalate, polyphenylene sulfide, polysulfone, polyetheretherketone, polyamideimide, etc. mentioned.

Solvents for dissolving the synthetic resin include, for example, IPA, PGEE (propylene glycol monoethyl ether), PGMEA (propylene glycol 1-monomethyl ether 2-acetate), EL (ethyl lactate) and the like.
The third moving nozzle 10 is an example of a stripping liquid supply unit that supplies (discharges) stripping liquid toward the upper surface of the substrate W held by the spin chuck 5 . It is also an example of a buffer solution supply unit that supplies (discharges) a buffer solution toward the upper surface of the substrate W. FIG.

The third moving nozzle 10 is moved horizontally and vertically by a third nozzle moving unit 38 . The third moving nozzle 10 can move between a center position and a home position (retracted position).
The third moving nozzle 10 faces the rotation center of the upper surface of the substrate W when positioned at the center position. When positioned at the home position, the third moving nozzle 10 does not face the upper surface of the substrate W, but is positioned outside the processing cup 7 in plan view. The third moving nozzle 10 can approach the upper surface of the substrate W or retreat upward from the upper surface of the substrate W by moving in the vertical direction.

The third nozzle moving unit 38 has a configuration similar to that of the first nozzle moving unit 36 . That is, the third nozzle moving unit 38 includes, for example, a vertical rotating shaft (not shown), a horizontally extending arm (not shown) connected to the rotating shaft and the third moving nozzle 10, and a rotating shaft driving unit (not shown) for raising and lowering and rotating the rotating shaft.

The third moving nozzle 10 is connected to an upper stripping liquid pipe 42 that guides the stripping liquid to the third moving nozzle 10 . When the upper remover valve 52 interposed in the upper remover pipe 42 is opened, the remover is continuously discharged downward from the outlet of the third moving nozzle 10 .
The third moving nozzle 10 is also connected to an upper buffer solution pipe 43 that guides the buffer solution to the third moving nozzle 10 . When the upper buffer solution valve 53 installed in the upper buffer solution pipe 43 is opened, the buffer solution is continuously discharged downward from the discharge port of the third moving nozzle 10 .

The stripping liquid is a liquid for stripping the processing film on the substrate W from the upper surface of the substrate W. FIG. As the stripping liquid, a liquid that dissolves the first component contained in the solute of the treatment liquid more easily than the second component contained in the solute of the treatment liquid is used. In other words, as the stripping liquid, a liquid is used in which the solubility (solubility) of the first component in the stripping liquid is higher than the solubility (solubility) of the second component in the stripping liquid. The stripping liquid is preferably a liquid compatible with (miscible with) the solvent contained in the treatment liquid.

The stripping solution is, for example, a water-based stripping solution. Examples of water-based stripping solutions include DIW, carbonated water, electrolytic ion water, hydrogen water, ozone water, hydrochloric acid water with a diluted concentration (for example, about 10 ppm to 100 ppm), alkaline aqueous solution, and the like. Examples of alkaline aqueous solutions include SC1 solution, aqueous ammonia solution, aqueous solution of quaternary ammonium hydroxide such as TMAH, and aqueous choline solution.

The buffer solution is a liquid for buffering the stripping action of the stripping solution on the treated film. By supplying the buffer solution to the treatment film prior to the stripping solution, it is possible to avoid the high-concentration stripping solution acting on a part of the treatment film. Thus, by supplying the buffer solution to the treatment film prior to the supply of the stripping solution, the stripping solution can be applied evenly to the entire treatment film.
Examples of buffer solutions include DIW, carbonated water, electrolytic ion water, hydrochloric acid water with a dilution concentration (for example, about 1 ppm to 100 ppm), ammonia water with a dilution concentration (for example, about 1 ppm to 100 ppm), and reduced water (hydrogen water). etc. That is, the same liquid as the rinse liquid can be used as the buffer.

The central nozzle 11 is accommodated in the internal space 60a of the hollow shaft 60 of the opposing member 6. As shown in FIG. A discharge port 11a provided at the tip of the central nozzle 11 faces the central region of the upper surface of the substrate W from above. The central region of the upper surface of the substrate W is the region including the center of rotation of the substrate W on the upper surface of the substrate W. As shown in FIG.
The central nozzle 11 includes a plurality of tubes 31-33 (a first tube 31, a second tube 32 and a third tube 33) for discharging fluid downward, and a tubular casing 30 surrounding the plurality of tubes 31-33. include. A plurality of tubes 31 to 33 and casing 30 extend vertically along rotation axis A1. The outlet 11a of the central nozzle 11 is also the outlet of a plurality of tubes 31-33.

The first tube 31 is an example of a rinse liquid supply unit that supplies the upper surface of the substrate W with the rinse liquid. The second tube 32 is an example of a gas supply unit that supplies gas between the upper surface of the substrate W and the opposing surface 6 a of the opposing member 6 . The third tube 33 is an example of an organic solvent supply unit that supplies the upper surface of the substrate W with an organic solvent such as IPA.
The first tube 31 is connected to an upper rinse liquid pipe 44 that guides the rinse liquid to the first tube 31 . When the upper rinse liquid valve 54 interposed in the upper rinse liquid pipe 44 is opened, the rinse liquid is continuously discharged from the first tube 31 (central nozzle 11) toward the central region of the upper surface of the substrate W. . Since the rinse solution is a liquid similar to the buffer solution, the first tube 31 is also an example of the buffer solution supply unit.

The second tube 32 is connected to a gas pipe 45 that guides gas to the second tube 32 . When the gas valve 55 interposed in the gas pipe 45 is opened, the gas is continuously discharged downward from the second tube 32 (central nozzle 11).
The gas discharged from the second tube 32 is, for example, inert gas such as nitrogen gas (N ₂ ). The gas discharged from the second tube 32 may be air. The inert gas is not limited to nitrogen gas, and is inert to the upper surface of the substrate W and the pattern formed on the upper surface of the substrate W. FIG. Examples of inert gases include nitrogen gas and rare gases such as argon.

The third tube 33 is connected to an organic solvent pipe 46 that guides the organic solvent to the third tube 33 . When the organic solvent valve 56 interposed in the organic solvent pipe 46 is opened, the organic solvent is continuously discharged from the third tube 33 (central nozzle 11) toward the central region of the upper surface of the substrate W.
The organic solvent discharged from the third tube 33 is a residue removing liquid that removes residues remaining on the upper surface of the substrate W after the treatment film has been removed by the stripping liquid. The organic solvent discharged from the third tube 33 preferably has compatibility with the treatment liquid and the rinse liquid.

Examples of the organic solvent discharged from the third tube 33 include liquid containing at least one of IPA, HFE (hydrofluoroether), methanol, ethanol, acetone, and Trans-1,2-dichloroethylene. .
Moreover, the organic solvent discharged from the third tube 33 does not need to consist of only a single component, and may be a liquid mixed with other components. For example, it may be a mixture of IPA and DIW, or a mixture of IPA and HFE.

The lower surface nozzle 12 is inserted into a through hole 21a that opens at the center of the upper surface of the spin base 21 . The ejection port 12 a of the lower surface nozzle 12 is exposed from the upper surface of the spin base 21 . The discharge port 12a of the lower surface nozzle 12 faces the central region of the lower surface of the substrate W from below. The central region of the bottom surface of the substrate W is the region including the center of rotation of the substrate W on the bottom surface of the substrate W. As shown in FIG.

One end of a common pipe 80 that commonly guides the rinsing liquid, stripping liquid, and heat medium to the lower nozzle 12 is connected to the lower nozzle 12 . At the other end of the common pipe 80, there are a lower rinse liquid pipe 81 that guides the rinse liquid to the common pipe 80, a lower remover pipe 82 that guides the remover solution to the common pipe 80, and a heat medium to the common pipe 80. A guiding heat medium pipe 83 is connected.
When the lower rinse liquid valve 86 interposed in the lower rinse liquid pipe 81 is opened, the rinse liquid is continuously discharged from the lower surface nozzle 12 toward the central region of the lower surface of the substrate W. As shown in FIG. When the lower stripping liquid valve 87 interposed in the lower stripping liquid pipe 82 is opened, the stripping liquid is continuously discharged from the lower surface nozzle 12 toward the central region of the lower surface of the substrate W. As shown in FIG. When the heat medium valve 88 interposed in the heat medium pipe 83 is opened, the heat medium is continuously discharged from the lower surface nozzle 12 toward the central region of the lower surface of the substrate W. As shown in FIG.

The lower surface nozzle 12 is an example of a lower rinse liquid supply unit that supplies the rinse liquid to the lower surface of the substrate W. As shown in FIG. Since the liquid used as the rinsing liquid can also be used as the buffer liquid, the lower surface nozzle 12 is also an example of a lower buffer liquid supply unit.
Further, the bottom surface nozzle 12 is an example of a bottom stripping liquid supply unit that supplies the stripping liquid to the bottom surface of the substrate W. As shown in FIG. Further, the lower surface nozzle 12 is an example of a heat medium supply unit that supplies the substrate W with a heat medium for heating the substrate W. As shown in FIG. The lower surface nozzle 12 is also a substrate heating unit that heats the substrate W. As shown in FIG.

The heat medium discharged from the lower surface nozzle 12 is, for example, high-temperature DIW having a temperature higher than room temperature and lower than the boiling point of the solvent contained in the processing liquid (for example, 60° C. to 80° C.). The heat medium discharged from the lower surface nozzle 12 is not limited to high temperature DIW, and a high temperature inert gas having a temperature higher than room temperature and lower than the boiling point of the solvent contained in the treatment liquid (for example, 60° C. to 80° C.). It may be a high-temperature gas such as high-temperature air.

FIG. 3 is a block diagram showing the electrical configuration of the main parts of the substrate processing apparatus 1. As shown in FIG. The controller 3 has a microcomputer, and controls objects provided in the substrate processing apparatus 1 according to a predetermined control program.
Specifically, the controller 3 includes a processor (CPU) 3A and a memory 3B storing control programs. The controller 3 is configured to perform various controls for substrate processing by the processor 3A executing a control program.

In particular, the controller 3 controls the transport robots IR and CR, the spin motor 23, the first nozzle moving unit 36, the second nozzle moving unit 37, the third nozzle moving unit 38, the opposed member lifting unit 61, the guard lifting unit 74, the valve 50 , 51, 52, 53, 54, 55, 56, 86, 87, 88.
FIG. 4 is a flowchart for explaining an example of substrate processing by the substrate processing apparatus 1. As shown in FIG. FIG. 4 mainly shows processing realized by the controller 3 executing the program. 5A to 5H are schematic diagrams for explaining each step of the substrate processing.

In the substrate processing by the substrate processing apparatus 1, for example, as shown in FIG. 4, a substrate loading step (step S1), a chemical liquid supply step (step S2), a first rinse step (step S3), a first organic solvent supply step ( Step S4), treatment liquid supply step (step S5), thinning step (step S6), heating step (step S7), buffering step (step S8), removing step (step S9), second rinsing step (step S10) , the second organic solvent supply step (step S11), the spin drying step (step S12), and the substrate unloading step (step S13) are executed in this order.

First, an unprocessed substrate W is transferred from the carrier C to the processing unit 2 by the transfer robots IR and CR (see FIG. 1) and transferred to the spin chuck 5 (step S1). Thereby, the substrate W is horizontally held by the spin chuck 5 (substrate holding step). The holding of the substrate W by the spin chuck 5 is continued until the spin dry process (step S12) is completed. When the substrate W is loaded, the facing member 6 is retracted to the upper position.

Next, after the transport robot CR retreats outside the processing unit 2, the chemical solution supply step (step S2) is started. Specifically, the spin motor 23 rotates the spin base 21 . Thereby, the horizontally held substrate W is rotated (substrate rotation step). Then, the guard lifting unit 74 moves the first guard 71A and the second guard 71B to the upper position.
Then, the first nozzle moving unit 36 moves the first moving nozzle 8 to the processing position. The processing position of the first moving nozzle 8 is, for example, the central position. Then, the chemical valve 50 is opened. As a result, the chemical liquid is supplied (discharged) from the first moving nozzle 8 toward the central region of the upper surface of the substrate W in the rotating state. In the chemical solution supply step, the substrate W is rotated at a predetermined chemical solution rotation speed, for example, 800 rpm.

The chemical solution supplied to the upper surface of the substrate W receives centrifugal force and spreads radially, and spreads over the entire upper surface of the substrate W. As shown in FIG. Thereby, the upper surface of the substrate W is treated with the chemical solution. The ejection of the chemical liquid from the first moving nozzle 8 continues for a predetermined time, for example, 30 seconds.
Next, the first rinse step (step S3) is started. In the first rinsing step, the chemical solution on the substrate W is washed away with the rinsing solution.

Specifically, the chemical valve 50 is closed. As a result, the supply of the chemical solution to the substrate W is stopped. Then, the first nozzle moving unit 36 moves the first moving nozzle 8 to the home position. Then, the opposing member elevating unit 61 moves the opposing member 6 to the processing position between the upper position and the lower position. When the facing member 6 is positioned at the processing position, the distance between the upper surface of the substrate W and the facing surface 6a is, for example, 30 mm. In the first rinse step, the positions of the first guard 71A and the second guard 71B are maintained at the upper position.

Then, the upper rinse liquid valve 54 is opened. As a result, the rinse liquid is supplied (discharged) from the central nozzle 11 toward the central region of the upper surface of the substrate W in the rotating state. Also, the lower rinse liquid valve 86 is opened. As a result, the rinse liquid is supplied (discharged) from the bottom surface nozzle 12 toward the central region of the bottom surface of the substrate W in the rotating state. In the first rinse step, the substrate W is rotated at a predetermined first rinse rotation speed, eg, 800 rpm.

The rinse liquid supplied to the upper surface of the substrate W from the central nozzle 11 spreads radially due to centrifugal force and spreads over the entire upper surface of the substrate W. FIG. As a result, the chemical solution on the upper surface of the substrate W is washed out of the substrate W. As shown in FIG.
The rinse liquid supplied to the lower surface of the substrate W from the lower surface nozzle 12 spreads radially due to centrifugal force, and spreads over the entire lower surface of the substrate W. As shown in FIG. Even if the chemical solution splashed from the substrate W in the chemical solution supply step adheres to the lower surface, the rinse solution supplied from the lower surface nozzle 12 washes away the chemical solution adhering to the lower surface. The discharge of the rinse liquid from the central nozzle 11 and the bottom nozzle 12 continues for a predetermined time, for example, 30 seconds.

Next, the first organic solvent supply step (step S4) is started. In the first organic solvent supply step, the rinse liquid on the substrate W is replaced with the organic solvent.
Specifically, the upper rinse liquid valve 54 and the lower rinse liquid valve 86 are closed. Thereby, the supply of the rinse liquid to the upper and lower surfaces of the substrate W is stopped. Then, the guard lifting unit 74 moves the first guard 71A to the lower position while maintaining the second guard 71B at the upper position. The counter member 6 is maintained in the processing position.

In the first organic solvent supply step, the substrate W is rotated at a predetermined first organic solvent rotation speed, eg, 300 rpm to 1500 rpm. The substrate W does not need to rotate at a constant rotational speed during the first organic solvent supply step. For example, the spin motor 23 may rotate the substrate W at 300 rpm when the supply of the organic solvent is started, and accelerate the rotation of the substrate W until the rotation speed of the substrate W reaches 1500 rpm while supplying the organic solvent to the substrate W. .

Then, the organic solvent valve 56 is opened. As a result, the organic solvent is supplied (discharged) from the central nozzle 11 toward the central region of the upper surface of the substrate W in the rotating state.
The organic solvent supplied to the upper surface of the substrate W from the central nozzle 11 is subjected to centrifugal force and spreads radially, and spreads over the entire upper surface of the substrate W. As shown in FIG. As a result, the rinse liquid on the substrate W is replaced with the organic solvent. The ejection of the organic solvent from the central nozzle 11 continues for a predetermined time, for example, 10 seconds.

Next, the treatment liquid supply step (step S5) is started. Specifically, the organic solvent valve 56 is closed. As a result, the supply of the organic solvent to the substrate W is stopped. Then, the opposing member elevating unit 61 moves the opposing member 6 to the upper position. Then, the guard lifting unit 74 moves the first guard 71A to the upper position. In the processing liquid supply step, the substrate W is rotated at a predetermined processing liquid rotation speed, for example, 10 rpm to 1500 rpm.

Then, as shown in FIG. 5A, the second nozzle moving unit 37 moves the second moving nozzle 9 to the processing position. The processing position of the second moving nozzle 9 is, for example, the central position. Then, the treatment liquid valve 51 is opened. As a result, the processing liquid is supplied (discharged) from the second moving nozzle 9 toward the central region of the upper surface of the substrate W in the rotating state (processing liquid supply process, processing liquid discharge process). As a result, the organic solvent on the substrate W is replaced with the processing liquid, and a liquid film of the processing liquid (processing liquid film 101) is formed on the substrate W (processing liquid film forming step). The supply of the treatment liquid from the second moving nozzle 9 continues for a predetermined time, eg, 2 to 4 seconds.

Next, the process film forming process (steps S6 and S7) is performed. In the process film forming step, the process liquid on the substrate W is solidified or hardened to form a process film 100 (see FIG. 5C) on the upper surface of the substrate W. As shown in FIG.
In the treated film forming process, a thinning process (spin-off process) (step S6) is performed. In the thinning process, first, the processing liquid valve 51 is closed. As a result, the supply of the processing liquid to the substrate W is stopped. Then, the second nozzle moving unit 37 moves the second moving nozzle 9 to the home position.

As shown in FIG. 5B, in the thinning step, centrifugation is performed while the supply of the processing liquid to the upper surface of the substrate W is stopped so that the processing liquid film 101 on the substrate W has an appropriate thickness. A portion of the processing liquid is expelled from the upper surface of the substrate W by force. In the thinning process, the opposing member 6, the first guard 71A and the second guard 71B are maintained at the upper position.
In the thinning process, the spin motor 23 changes the rotation speed of the substrate W to a predetermined thinning speed. The thinning speed is, for example, 300 rpm to 1500 rpm. The rotation speed of the substrate W may be kept constant within the range of 300 rpm to 1500 rpm, or may be appropriately changed within the range of 300 rpm to 1500 rpm during the thinning process. The thinning process is performed for a predetermined time, eg, 30 seconds.

Referring to FIG. 5C, in the process film forming process, a heating process (step S7) for heating the substrate W is performed after the thinning process. In the heating step, the processing liquid film 101 (see FIG. 5B) on the substrate W is heated in order to partially volatilize (evaporate) the solvent of the processing liquid on the substrate W. FIG.
Specifically, the opposing member elevating unit 61 moves the opposing member 6 to the close position between the upper position and the lower position. The proximate position may be the down position. The close position is a position where the distance from the upper surface of the substrate W to the opposing surface 6a is, for example, 1 mm. In the heating process, the first guard 71A and the second guard 71B are maintained at the upper position.

Then the gas valve 55 is opened. Thereby, the gas is supplied to the space between the upper surface of the substrate W (the upper surface of the processing liquid film 101) and the facing surface 6a of the facing member 6 (gas supply step).
Then, the heat medium valve 88 is opened. As a result, the heat medium is supplied (discharged) from the bottom surface nozzle 12 toward the central region of the bottom surface of the substrate W in the rotating state (heat medium supply process, heat medium discharge process). The heat medium supplied from the lower surface nozzle 12 to the lower surface of the substrate W receives centrifugal force and spreads radially, and spreads over the entire lower surface of the substrate W. As shown in FIG. The supply of the heat medium to the substrate W continues for a predetermined time, eg, 60 seconds. In the heating process, the substrate W is rotated at a predetermined heating rotation speed, eg, 1000 rpm.

By supplying the heating medium to the lower surface of the substrate W, the processing liquid film 101 on the substrate W is heated through the substrate W. As shown in FIG. This promotes evaporation of the solvent in the treatment liquid film 101 (solvent evaporation process, solvent evaporation promotion process). Therefore, the time required for forming the treatment film 100 can be shortened. The bottom nozzle 12 functions as an evaporation unit (evaporation acceleration unit) that evaporates the solvent in the processing liquid.

By performing the thinning process and the heating process, the processing liquid is solidified or hardened, and the processing film 100 is formed on the substrate W. FIG. Thus, the substrate rotating unit (spin motor 23) and the bottom nozzle 12 are included in a solid forming unit that solidifies or cures the processing liquid to form a solid (processing film 100).
In the heating step, the substrate W is preferably heated such that the temperature of the processing liquid on the substrate W is less than the boiling point of the solvent. By heating the treatment liquid to a temperature lower than the boiling point of the solvent, the solvent can be appropriately left in the treatment film 100 . As a result, compared to the case where no solvent remains in the treatment film 100, in the subsequent removal step (step S9), the interaction between the solvent remaining in the treatment film 100 and the removal solution causes the removal of the removal solution. is easy to adapt to the treatment film 100 . Therefore, it becomes easier to peel off the treatment film 100 with the peeling liquid.

The heat medium scattered outside the substrate W due to the centrifugal force is received by the first guard 71A. Heat medium received by the first guard 71A may bounce off the first guard 71A. However, since the facing member 6 is close to the upper surface of the substrate W, it can protect the upper surface of the substrate W from the heat medium bounced off the first guard 71A. Therefore, it is possible to suppress the adhesion of the heat medium to the upper surface of the treatment film 100, thereby suppressing the generation of particles caused by the bounce of the heat medium from the first guard 71A.

Furthermore, by supplying the gas from the central nozzle 11, a gas is moved from the central region of the upper surface of the substrate W toward the peripheral edge of the upper surface of the substrate W in the space between the facing surface 6a of the facing member 6 and the upper surface of the substrate W. An airflow F is formed. By forming the airflow F that moves from the central region of the upper surface of the substrate W toward the peripheral edge of the upper surface of the substrate W, the heat medium bounced back from the first guard 71A can be pushed back toward the first guard 71A. Therefore, adhesion of the heat medium to the upper surface of the treatment film 100 can be further suppressed.

Next, a buffering step (step S8) is performed. Specifically, the heat medium valve 88 is closed. Thereby, the supply of the heat medium to the lower surface of the substrate W is stopped. Then the gas valve 55 is closed. As a result, the supply of gas to the space between the facing surface 6a of the facing member 6 and the upper surface of the substrate W is stopped.
Then, the facing member elevating unit 61 moves the facing member 6 to the upper position. Then, as shown in FIG. 5D, the third nozzle moving unit 38 moves the third moving nozzle 10 to the processing position. The processing position of the third moving nozzle 10 is, for example, the central position. In the buffering step, the substrate W is rotated at a predetermined buffering rotation speed, eg 800 rpm.

The upper buffer valve 53 is then opened. As a result, the buffer solution is supplied (discharged) from the third moving nozzle 10 toward the center region of the upper surface of the substrate W in the rotating state (buffer solution supply step, buffer solution discharge step). The buffer solution supplied to the upper surface of the substrate W spreads over the entire upper surface of the substrate W due to centrifugal force. The supply of the buffer solution to the upper surface of the substrate W is continued for a predetermined time, eg, 60 seconds.

The stripping liquid supplied to the substrate W in the next removing step (step S9) may locally act on the upper surface of the substrate W, especially when the stripping liquid is started to be supplied, when the concentration thereof is high. Therefore, by supplying the buffer solution to the upper surface of the substrate W prior to the stripping solution, the effect of the stripping solution on the processing film 100 is buffered. As a result, it is possible to prevent the stripping liquid from acting locally on the upper surface of the substrate W, so that the entire upper surface of the substrate W can be evenly affected by the stripping liquid.

Next, referring to FIG. 5E, a removal step (step S9) is performed. In the removal step, the substrate W is rotated at a predetermined removal rotation speed, eg, 800 rpm.
The upper buffer valve 53 is then closed. As a result, the supply of the buffer solution to the upper surface of the substrate W is stopped. Then, the upper stripping liquid valve 52 is opened. As a result, the stripping liquid is supplied (discharged) from the third moving nozzle 10 toward the central region of the upper surface of the substrate W in the rotating state (upper stripping liquid supply step, upper stripping liquid discharging step). The stripping liquid supplied to the upper surface of the substrate W spreads over the entire upper surface of the substrate W due to centrifugal force. The supply of the stripping liquid to the upper surface of the substrate W is continued for a predetermined time, eg, 60 seconds.

The treatment film 100 is removed from the upper surface of the substrate W by supplying the remover to the upper surface of the substrate W. FIG. The processing film 100 splits into film pieces when it is peeled off from the upper surface of the substrate W. As shown in FIG. The split pieces of the treatment film 100 are subjected to centrifugal force due to the rotation of the substrate W, and are ejected to the outside of the substrate W together with the stripping liquid. As a result, the object to be removed is removed from the upper surface of the substrate W together with the processing film 100 .

Here, the processing liquid supplied to the upper surface of the substrate W in the processing liquid supply step (step S5) shown in FIG. In addition, the processing liquid scattered from the substrate W may rebound from the first guard 71A and adhere to the lower surface of the substrate W. As shown in FIG. Even in such a case, as shown in FIG. 5C, the heating medium is supplied to the lower surface of the substrate W in the heating step (step S7), and the flow of the heating medium causes the treatment liquid to flow from the lower surface of the substrate W. can be eliminated.

Furthermore, the processing liquid adhering to the lower surface of the substrate W may solidify or harden to form a solid due to the processing liquid supply step (step S5). Even in such a case, as shown in FIG. 5E, while the stripping liquid is being supplied to the upper surface of the substrate W in the removal step (step S9), the lower stripping liquid valve 87 is opened to release the liquid from the lower surface nozzle 12. By supplying (discharging) the stripping liquid to the bottom surface of the substrate W, the solid can be stripped from the bottom surface of the substrate W (lower stripping liquid supplying process, lower stripping liquid discharging process).

Furthermore, as shown in FIG. 5D, while the buffer solution is being supplied to the upper surface of the substrate W in the buffering step (step S8), the lower rinse solution valve 86 is opened to supply the buffer solution from the lower surface nozzle 12 to the lower surface of the substrate W as the buffer solution. By supplying (discharging) the rinsing liquid, the action of the stripping liquid supplied to the lower surface of the substrate W can be buffered (lower buffer supplying step, lower buffer discharging step).
Next, a second rinse step (step S10) is performed. Specifically, the upper stripping liquid valve 52 and the lower stripping liquid valve 87 are closed. Thereby, the supply of the stripping liquid to the upper and lower surfaces of the substrate W is stopped. Then, the third nozzle moving unit 38 moves the third moving nozzle 10 to the home position.

Then, as shown in FIG. 5F, the opposing member elevating unit 61 moves the opposing member 6 to the processing position. In the second rinse step, the substrate W is rotated at a predetermined second rinse rotation speed, eg, 800 rpm. The first guard 71A and the second guard 71B are maintained at the upper position.
Then, the upper rinse liquid valve 54 is opened. As a result, the rinse liquid is supplied (discharged) from the central nozzle 11 toward the central region of the upper surface of the substrate W in the rotating state (second upper rinse liquid supply step, second upper rinse liquid discharge step). The rinsing liquid supplied to the upper surface of the substrate W is subjected to centrifugal force and spreads radially, and spreads over the entire upper surface of the substrate W. As shown in FIG. As a result, the stripping liquid adhering to the upper surface of the substrate W is washed away with the rinsing liquid.

Then, the lower rinse liquid valve 86 is opened. As a result, the rinse liquid is supplied (discharged) from the lower surface nozzle 12 toward the central region of the lower surface of the substrate W in the rotating state (second lower rinse liquid supply process, second lower rinse liquid discharge process). As a result, the stripping liquid adhering to the bottom surface of the substrate W is washed away with the rinse liquid. The supply of the rinsing liquid to the upper and lower surfaces of the substrate W continues for a predetermined time, eg, 35 seconds.

Next, the second organic solvent supply step (step S11) is performed. Specifically, the guard lifting unit 74 moves the first guard 71A to the lower position. The opposing member 6 is then maintained at the processing position. In the second organic solvent supply step, the substrate W is rotated at a predetermined second organic solvent rotation speed, eg, 300 rpm.
Then, the upper rinse liquid valve 54 and the lower rinse liquid valve 86 are closed. Thereby, the supply of the rinse liquid to the upper and lower surfaces of the substrate W is stopped. Then, as shown in FIG. 5G, the organic solvent valve 56 is opened. As a result, the organic solvent is supplied (discharged) from the central nozzle 11 toward the central region of the upper surface of the rotating substrate W (second organic solvent supply process, second organic solvent discharge process, residue removing liquid supply process). ). The supply of the organic solvent to the upper surface of the substrate W is continued for a predetermined time, eg, 30 seconds.

The organic solvent supplied to the upper surface of the substrate W spreads radially due to centrifugal force and spreads over the entire upper surface of the substrate W. FIG. As a result, the rinse liquid on the upper surface of the substrate W is replaced with the organic solvent. The organic solvent supplied to the upper surface of the substrate W dissolves the residue of the processing film 100 remaining on the upper surface of the substrate W, and then is discharged from the peripheral edge of the upper surface of the substrate W (residue removing step).
Next, a spin dry process (step S12) is performed. Specifically, referring to FIG. 5H, organic solvent valve 56 is closed. Thereby, the supply of the organic solvent to the upper surface of the substrate W is stopped. Then, the opposing member elevating unit 61 moves the opposing member 6 to the drying position below the processing position. When the opposing member 6 is located at the drying position, the distance between the opposing surface 6a of the opposing member 6 and the upper surface of the substrate W is 1.5 mm, for example.

Then, the spin motor 23 accelerates the rotation of the substrate W to rotate the substrate W at high speed. In the spin dry process, the substrate W is rotated at a drying speed of, for example, 1500 rpm. The spin dry process is performed for a predetermined time, eg, 30 seconds. As a result, a large centrifugal force acts on the organic solvent on the substrate W, and the organic solvent on the substrate W is shaken off around the substrate W. FIG.
Then, the spin motor 23 stops the substrate W from rotating. The guard lifting unit 74 moves the first guard 71A and the second guard 71B to the lower position. Gas valve 55 is closed. The opposing member elevating unit 61 moves the opposing member 6 to the upper position.

The transport robot CR enters the processing unit 2, picks up the processed substrate W from the chuck pins 20 of the spin chuck 5, and carries it out of the processing unit 2 (step S13). The substrate W is transferred from the transport robot CR to the transport robot IR and stored in the carrier C by the transport robot IR.
Next, how the treatment film 100 is peeled off from the substrate W will be described with reference to FIGS. 6A to 6D. FIG. 6A shows the vicinity of the upper surface of the substrate W after the thinning step (step S6). FIG. 6B shows the vicinity of the upper surface of the substrate W after the heating step (step S7). 6C and 6D show the vicinity of the upper surface of the substrate W during the removal step (step S9).

By forming the processing liquid film 101 on the upper surface of the substrate W in the processing liquid supply step (step S5), the removal target object 103 existing on the upper surface of the substrate W is brought into contact with the processing liquid. Therefore, as shown in FIG. 6A, even after the processing liquid film 101 is thinned by the thinning step (step S6), the processing liquid is maintained in contact with the object 103 to be removed.
In the heating step (step S7), the treatment liquid film 101 on the substrate W is heated and solidified or hardened while the treatment liquid is in contact with the object 103 to be removed. Thereby, as shown in FIG. 6B, the treatment film 100 holding the removal target 103 is formed. Specifically, the first component contained in the solute of the processing liquid forms a first solid 110 and the second component contained in the solute of the processing liquid forms a second solid 111 by evaporating at least a portion of the solvent. do.

By forming the processing film 100 holding the removal target 103, the apparent size of the removal target 103 is enlarged to the thickness D of the processing film 100 in the thickness direction T (removal target enlarging step). . The apparent size of the object to be removed 103 is the size in the thickness direction T of the object to be removed 103 and the treatment film 100 as a whole when the object to be removed 103 is integrated with another solid (treatment film 100). .

Then, referring to FIG. 6C, the treatment film 100 is partially dissolved in the removing step. When the stripping liquid is supplied to the upper surface of the substrate W, the first solid 110 formed of the first component having higher solubility in the stripping liquid than the second component is mainly dissolved. As a result, through holes 102 are formed in portions of the treatment film 100 where the first solids 110 are unevenly distributed (through hole forming step).

The through hole 102 is particularly likely to be formed in a portion where the first solid 110 extends in the thickness direction T of the substrate W (also the thickness direction of the treatment film 100). The through-hole 102 has a diameter of, for example, several nanometers in plan view.
The second solid 111 is also dissolved in the stripping liquid. However, since the solubility of the second component in the stripping liquid is lower than that of the first component, the second solid 111 is only slightly dissolved near the surface by the stripping liquid. Therefore, the stripping liquid reaching the vicinity of the upper surface of the substrate W through the through-hole 102 slightly dissolves the portion of the second solid 111 near the upper surface of the substrate W. FIG. As a result, as shown in the enlarged view of FIG. 6C, the stripping liquid enters the gap G1 between the processing film 100 and the upper surface of the substrate W while gradually dissolving the second solid 111 near the upper surface of the substrate W. (stripping solution entering step).

Then, for example, the processing film 100 splits starting from the periphery of the through-hole 102 to form film pieces, and as shown in FIG. (treatment film splitting process, peeling process).
Then, the object to be removed 103 is removed from the upper surface of the substrate W together with the processing film 100 by the processing film 100 being washed away by the stripping liquid and removed from the substrate W. FIG. That is, the object to be removed 103 is removed from the upper surface of the substrate W while maintaining the state in which the apparent size of the object to be removed 103 is enlarged (removal step).

Next, the energy received by the object to be removed 103 from the stripping liquid flowing on the upper surface of the substrate W will be described. The flow velocity of the stripping liquid flowing on the upper surface of the substrate W is affected by the viscosity of the stripping liquid. Therefore, the flow velocity of the stripping liquid in the direction along the upper surface of the substrate W becomes smaller near the upper surface of the substrate W than at a position sufficiently distant from the upper surface of the substrate W. FIG.
A layer that is strongly affected by the viscosity of the stripping liquid in the flow of the stripping liquid is called a boundary layer BL. The size of the boundary layer BL in the thickness direction T of the substrate W (the direction perpendicular to the flow direction of the stripping liquid) is called a boundary layer thickness δ.

FIG. 7 is a schematic diagram for comparing the boundary layer thickness δ in the flow of stripping liquid along the upper surface of the substrate W and the size of the object 103 to be removed. FIG. 8 is a graph showing the relationship between the flow velocity of the stripping liquid flowing along the upper surface of the substrate W and the boundary layer thickness δ. In FIG. 8, the horizontal axis indicates the flow velocity V of the stripping liquid, and the vertical axis indicates the boundary layer thickness δ.
Assuming that the flow velocity of the stripping solution outside the boundary layer BL is V, the boundary layer thickness δ at the flow velocity V is expressed by the following formula (1). α is a coefficient. v indicates the kinematic viscosity of the stripping liquid. x is the distance between an arbitrary position on the upper surface of the substrate W and a position away from the origin along the direction in which the stripping liquid flows.

図７に実線で示すように、基板Ｗの厚さ方向Ｔにおける除去対象物１０３のサイズｄ１（除去対象物１０３が球体の場合は直径）が境界層厚さδ以下である場合、基板Ｗの上面に付着した除去対象物１０３は、流速Ｖよりも小さい流速の剥離液流からエネルギーを受ける。

As shown by the solid line in FIG. 7, when the size d1 of the object to be removed 103 in the thickness direction T of the substrate W (diameter if the object to be removed 103 is spherical) is equal to or less than the boundary layer thickness δ, the thickness of the substrate W is The object to be removed 103 adhering to the upper surface receives energy from the stripping liquid flow having a flow rate lower than the flow rate V. FIG.

On the other hand, as indicated by a two-dot chain line in FIG. receives energy from the stripper liquid stream with a flow rate V in addition to the stripper liquid stream with a flow rate V less than the flow rate V. That is, when the size d2 of the object to be removed 103 in the thickness direction T of the substrate W is larger than the boundary layer thickness δ, the object to be removed 103 adhering to the upper surface of the substrate W is separated from the upper surface of the substrate W. There is a high possibility that sufficient energy can be received from the stripper.

However, as shown in FIG. 8, the size d1 of the general object to be removed 103 existing on the upper surface of the substrate W is smaller than 50 nm. Further, when the flow velocity V of the stripping liquid flowing along the upper surface of the substrate W is greater than 0 m/s and less than 100 m/s (0 m/s<V<100 m/s), the boundary layer thickness δ is greater than 50 nm. is also big. The flow velocity V of the stripping liquid flowing over the upper surface of the substrate W is generally greater than 0 m/s and less than 100 m/s.

Therefore, the size d1 of the general object to be removed 103 existing on the upper surface of the substrate W is much smaller than the boundary layer thickness δ regardless of the flow velocity V of the stripping liquid. In this case, the object to be removed 103 existing on the upper surface of the substrate W may not be able to receive sufficient energy from the stripping liquid flowing along the upper surface of the substrate W.
Therefore, according to the present embodiment, the treatment liquid is solidified or hardened while being in contact with the object 103 to be removed to form the treatment film 100, thereby increasing the apparent size of the object 103 to be removed. By forming the processing film 100, the apparent size of the object to be removed 103 in the thickness direction T of the substrate W becomes the thickness D of the processing film 100. big. Therefore, the object to be removed 103 whose apparent size is enlarged reaches a position farther from the upper surface of the substrate W than the object to be removed 103 having the original size.

Therefore, the energy that the object to be removed 103 receives from the stripping liquid flowing along the upper surface of the substrate W can be increased. Therefore, the object to be removed 103 held by the treatment film 100 is easily separated from the substrate W. FIG.
Then, the object to be removed 103 is peeled off from the substrate W with its apparent size enlarged, and removed from the upper surface of the substrate W together with the peeling liquid. Therefore, even after the object 103 to be removed is peeled from the upper surface of the substrate W, the state in which the energy received by the object 103 from the stripping liquid flowing on the upper surface of the substrate W can be increased can be maintained.

As a result, the object to be removed 103 existing on the upper surface of the substrate W can be removed efficiently.
In addition, since the processing film 100 separated from the upper surface of the substrate W floats from the upper surface of the substrate W together with the object to be removed 103, it is further separated from the upper surface of the substrate W in the removing liquid. Therefore, the processing film 100 peeled off from the upper surface of the substrate W is highly likely to receive energy from the peeling liquid having a higher flow velocity. Therefore, the processing film 100 peeled off from the upper surface of the substrate W is easily washed away from the substrate W by the peeling liquid.

In addition, as described above, at a position apart from the upper surface of the substrate W in the thickness direction T of the substrate W by the boundary layer thickness δ, the peeling liquid flowing along the upper surface of the substrate W due to the viscosity of the peeling liquid Substantially no decrease in liquid flow rate occurs. As shown in FIG. 6B, if the apparent size (thickness D of the treatment film 100) of the object to be removed 103 after the heating step (step S7) is larger than the boundary thickness δ (D>δ), the object to be removed The energy that the stripper 103 receives from the stripping liquid flowing on the upper surface of the substrate W can be made sufficiently large. Therefore, the object to be removed 103 can be easily peeled off from the substrate W, and can be quickly removed to the outside of the substrate W together with the peeling liquid.

Further, according to this embodiment, the through holes 102 are formed in the treatment film 100 by partially dissolving the treatment film 100 with the stripping solution. Therefore, the stripping liquid can reach the vicinity of the upper surface of the substrate W more easily. Therefore, the treatment film 100 can be efficiently removed from the substrate W by causing the stripping solution to act on the interface between the treatment film 100 and the substrate W. FIG. On the other hand, the portion of the treatment film 100 other than the portion where the through holes 102 are formed (the second solid 111) is maintained in a solid state without being dissolved in the stripping solution. The state in which the apparent size of 103 is enlarged can be maintained. Therefore, the object to be removed 103 can be efficiently separated from the upper surface of the substrate W, and the energy received by the object to be removed 103 from the flow of the stripping liquid can be sufficiently increased.

Further, according to this embodiment, the stripping liquid enters between the treatment film 100 and the upper surface of the substrate W through the through holes 102 . Therefore, the stripping liquid can be applied to the interface between the processing film 100 and the substrate W to strip the processing film 100 from the upper surface of the substrate W more efficiently.
Further, according to this embodiment, the first component has higher solubility in the stripper than the second component. Therefore, the first solid 110 formed by the first component dissolves more easily in the stripping solution than the second solid 111 formed by the second component. Therefore, by supplying the stripping liquid to the upper surface of the substrate W, the stripping liquid mainly dissolves the first solid 110 and reaches the vicinity of the upper surface of the substrate W. FIG. Therefore, the stripping liquid can act on the interface between the processing film 100 and the substrate W. FIG. On the other hand, most of the second solid 111 is maintained in a solid state without being dissolved in the stripping liquid. Therefore, the state in which the object 103 to be removed is held by the second solid 111, that is, the state in which the apparent size of the object 103 to be removed is enlarged can be maintained.

As a result, the object to be removed 103 can be efficiently separated from the upper surface of the substrate W, and the energy received by the object to be removed 103 from the stripping liquid flowing on the upper surface of the substrate W can be sufficiently increased.
Also, in this embodiment, the content of the second component in the treatment liquid is greater than the content of the first component in the treatment liquid. Therefore, compared to a configuration in which the content of the second component in the treatment liquid is smaller than the content of the first component in the treatment liquid, the portion of the treatment film 100 that is dissolved by the stripping solution can be reduced. can. Therefore, it is possible to reduce the number of objects to be removed 103 that separate from the treatment film 100 as the treatment film 100 is partially dissolved. As a result, most of the objects to be removed 103 can be removed from the upper surface of the substrate W together with the processing film 100, so that the objects to be removed 103 can be efficiently removed from the substrate W while suppressing reattachment to the substrate W. .

Furthermore, compared to a configuration in which the content of the second component in the treatment liquid is less than the content of the first component in the treatment liquid, the portion of the treatment film 100 that is dissolved by the stripping solution is small. The membrane 100 can be split into relatively large membrane pieces. Because the treatment membrane 100 is split into relatively large membrane pieces, the membrane pieces can increase the surface area that receives force from the stripping solution flow. Therefore, it is likely to be discharged to the outside of the substrate W along with the flow of the stripping liquid. Therefore, the object to be removed 103 can be efficiently removed from the substrate W together with the treatment film 100 .

The present invention is not limited to the embodiments described above, but can be embodied in other forms.
For example, the substrate processing apparatus 1 may perform substrate processing without the chemical solution supply step (step S2), the first rinse step (step S3), and the first organic solvent supply step (step S4).

Further, in the substrate processing in the above-described embodiment, the solvent of the processing liquid is evaporated by heating the substrate W with the heating medium in the processing film forming process (steps S6 and S7). However, the substrate W may be heated by a heater or the like (not shown) incorporated in the spin base 21 or the opposing member 6 without being limited to the supply of the heat medium. In this case, the heater functions as a substrate heating unit and an evaporation unit (evaporation acceleration unit).

In addition, it is not always necessary to heat the substrate W to form the treatment film 100 . That is, when the solvent is sufficiently volatilized (evaporated) in the thinning step (step S6), the subsequent heating step (step S7) may not be performed. In particular, when the solvent may remain inside the treatment film 100, the solvent can be easily evaporated to a desired degree without heating the substrate W. FIG.

Further, in the substrate processing described above, it is possible to omit the buffering step (step S8).
Further, in each of the above-described embodiments, the content of the second component in the treatment liquid is greater than the content of the first component in the treatment liquid. However, the content of the second component in the treatment liquid may be less than the content of the first component in the treatment liquid.

In this case, compared to a configuration in which the content of the second component in the treatment liquid is higher than the content of the first component in the treatment liquid, the portion of the treatment film 100 that is dissolved by the stripping solution is increased. can be done. Therefore, the treatment film 100 can be split into relatively fine film pieces. Since the treatment film 100 is split into relatively fine film pieces, the film pieces are likely to float under the force of the flow of the stripping liquid, and are easily discharged from the substrate W along with the flow of the stripping liquid. Therefore, the treatment film 100 can be removed from the substrate W efficiently.

Further, in the above-described embodiments, each component of the solute (the first component and the second component) contained in the treatment liquid is a synthetic resin. However, each component of the solute does not necessarily have to be a synthetic resin, as long as it is dissolved by the solvent contained in the treatment liquid and the solubility of the first component in the stripping solution is higher than that of the second component. good. If so, each component of the solute may be, for example, a metal or a salt.

Further, in the above-described embodiments, the solute contained in the treatment liquid contains the first component and the second component. However, the solute may contain a single component, or may contain three or more components having mutually different solubilities in the stripping solution.
In addition, various modifications can be made within the scope of the claims.

Reference Signs List 1: substrate processing apparatus 3: controller 9: second moving nozzle (processing liquid supply unit)
10: Third moving nozzle (stripping solution supply unit)
12: Bottom nozzle (solid forming unit)
23: Spin motor (solid forming unit)
100: treatment film 103: object to be removed 110: first solid 111: second solid T: thickness direction δ: boundary layer thickness

Claims (18)

a processing liquid supply step of supplying the processing liquid to the surface of the substrate;
An object to be removed that expands the apparent size of the object to be removed by solidifying or hardening the treatment liquid supplied to the surface of the substrate while being in contact with the object to be removed existing on the surface of the substrate. an enlargement process;
A stripping solution is supplied to the surface of the substrate to strip the object to be removed whose apparent size has been enlarged from the surface of the substrate, and the object to be removed is maintained in a state where the apparent size of the object to be removed is enlarged. and a removing step of removing the object to be removed from the substrate. The step of enlarging the object to be removed is a step of enlarging the apparent size of the object to be removed so that, in the thickness direction of the substrate, the thickness of the boundary layer in the flow of the stripping liquid along the surface of the substrate is larger than the thickness of the boundary layer. The substrate processing method of claim 1, comprising: The object-to-be-removed enlarging step includes a treatment film forming step of solidifying or hardening the treatment liquid supplied to the surface of the substrate to form a treatment film holding the object to be removed on the surface of the substrate,
3. The substrate processing method according to claim 1, wherein said removing step includes a step of stripping said object to be removed together with said processing film from the surface of said substrate. 4. The substrate processing method according to claim 3, wherein said removing step includes a through-hole forming step of partially dissolving said processing film with said stripping solution to form through-holes in said processing film. 5. The substrate processing method according to claim 4, wherein said removing step further includes a stripping solution entering step of allowing said stripping solution to enter between said treatment film and the surface of said substrate through said through-hole. The treatment liquid has a solute having a first component and a second component having lower solubility in the stripping solution than the first component, and a solvent that dissolves the solute,
6. Any one of claims 3 to 5, wherein said treated film forming step comprises forming said treated film having a first solid formed by said first component and a second solid formed by said second component. 1. The substrate processing method according to claim 1. 7. The substrate processing method according to claim 6, wherein the content of said second component in said processing liquid is greater than the content of said first component in said processing liquid. 7. The substrate processing method according to claim 6, wherein the content of said second component in said processing liquid is less than the content of said first component in said processing liquid. 9. The substrate processing method according to claim 6, wherein said first component and said second component are synthetic resins. a processing liquid supply unit that supplies the processing liquid to the surface of the substrate;
a solid forming unit for solidifying or hardening the treatment liquid;
a stripping liquid supply unit that supplies a stripping liquid to the surface of the substrate;
a controller that controls the treatment liquid supply unit, the solid formation unit, and the stripper supply unit;
The controller causes the processing liquid supply step of supplying the processing liquid from the processing liquid supply unit to the surface of the substrate, and solidifying or hardening the processing liquid supplied to the surface of the substrate in the solid forming unit. an object-to-be-removed enlarging step of enlarging an apparent size of an object-to-be-removed existing on the surface of the substrate; removing the object to be removed from the surface of the substrate and removing the object to be removed from the substrate while maintaining the state in which the apparent size of the object to be removed is enlarged. Device. In the step of enlarging the object to be removed, the controller controls the apparent size of the object to be removed so that the thickness of the object to be removed is larger than the thickness of the boundary layer in the flow of the stripping liquid along the surface of the substrate in the thickness direction of the substrate. 11. The substrate processing apparatus of claim 10 programmed to magnify the . A processing film forming step in which the controller solidifies or hardens the processing liquid supplied to the surface of the substrate in the object-to-be-removed enlarging step to form a treatment film holding the object to be removed on the surface of the substrate. 12. The substrate processing apparatus according to claim 10 or 11, wherein the substrate processing apparatus is programmed to perform and separate the object to be removed from the surface of the substrate together with the processing film in the removing step. 13. The method according to claim 12, wherein the controller is programmed to perform a through-hole forming step of forming through-holes in the treated film by partially dissolving the treated film in the stripping solution in the removing step. A substrate processing apparatus as described. 14. The substrate processing apparatus according to claim 13, wherein said controller is programmed to cause said stripping liquid to enter between said processing film and the surface of said substrate through said through-hole in said removing step. The treatment liquid has a solute having a first component and a second component having lower solubility in the stripping solution than the first component, and a solvent that dissolves the solute,
wherein the controller is programmed to form, in the treated film forming step, the treated film comprising a first solid formed by the first component and a second solid formed by the second component; The substrate processing apparatus according to any one of claims 12-14. 16. The substrate processing apparatus according to claim 15, wherein the content of said second component in said processing liquid is higher than the content of said first component in said processing liquid. 16. The substrate processing apparatus according to claim 15, wherein the content of said second component in said processing liquid is less than the content of said first component in said processing liquid. The substrate processing apparatus according to any one of claims 15 to 17, wherein said first component and said second component are synthetic resins.

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