TWI693639B - Substrate processing method and substrate processing apparatus - Google Patents

Abstract

The substrate processing method is to dry a substrate having a pattern forming surface on which a pattern having concave portions is formed. The substrate processing method includes: a sacrificial layer forming process, which forms a sacrificial layer imitating the surface of the pattern on the pattern forming surface; and a filling layer forming process, which is formed on the pattern forming surface with the sacrificial layer formed A filling layer that fills the concave portion of the pattern; a vaporization process, which is to vaporize the sacrificial layer in the state where the filler layer is formed; and a peeling process, which is to vaporize the sacrificial layer, then The filling layer is peeled from the pattern forming surface.

Description

Substrate processing method and substrate processing device

The invention relates to a substrate processing method and a substrate processing device for processing substrates. The substrates to be processed include, for example, semiconductor wafers, substrates for liquid crystal display devices, organic EL (Electroluminescence) display devices, and other FPD (Flat Panel Display) substrates, optical disc substrates, magnetic disc substrates, Substrates for magneto-optical disc substrates, photomask substrates, ceramic substrates, solar cell substrates, etc.

In the manufacture of semiconductor elements, circuit patterns are formed on the surface of the substrate. The surface of the substrate on which the circuit pattern is formed is dried after being cleaned with a chemical solution. In detail, after replacing the chemical solution with the rinse solution, the substrate is rotated at a high speed to remove the rinse solution from the surface of the substrate, thereby drying the surface of the substrate. However, there is a possibility that the rinse liquid that has entered the concave portion in the circuit pattern cannot be removed. Therefore, there is a risk of drying defects. The liquid surface (interface of air and liquid) of the rinsing liquid entering the recess is formed in the recess. Therefore, the surface tension of the rinse liquid acts on the contact position of the liquid surface and the pattern. When the surface tension is large, it is easy to cause the pattern to collapse.

Therefore, in the following Patent Document 1, a substrate treatment is proposed, which is to replace the rinsing liquid on the substrate with a filler, and after curing the filler, the filler is removed by plasma treatment, thereby drying the substrate. [Prior Technical Literature] [Patent Literature]

[Patent Document 1] Japanese Patent Laid-Open No. 2011-124313

[Problems to be solved by the invention] However, in the case of plasma processing, a complicated process is required, so there is a possibility that the time required for drying the substrate is longer. Furthermore, there is a possibility that the productivity of the semiconductor element may decrease.

Therefore, an object of the present invention is to provide a substrate processing method and a substrate processing apparatus that can shorten the time required for substrate drying. [Technical means to solve the problem]

An embodiment of the present invention provides a substrate processing method which dries a substrate having a pattern-forming surface with a pattern having recesses, and the substrate processing method includes: a sacrificial layer forming process, which is based on The pattern forming surface forms a sacrificial layer imitating the surface of the pattern; a filling layer forming process is formed on the pattern forming surface to fill a filling layer filled with the recess of the pattern of the pattern forming surface on which the sacrificial layer is formed A gasification process, which is to vaporize the sacrificial layer in the state where the filling layer is formed; and a peeling process, which is to strip the filling layer from the pattern-forming surface after vaporizing the sacrificial layer.

According to this method, after the sacrificial layer imitating the surface of the pattern is formed, the concave portion of the pattern is filled with the filling layer. Therefore, the filling layer is formed in a state where a sacrificial layer is interposed between the surface of the pattern and not in a state of being in close contact with the surface of the pattern. Thereafter, by vaporizing the sacrificial layer with the filling layer formed, the sacrificial layer disappears from between the surface of the pattern and the filling layer. Therefore, the degree of adhesion between the pattern and the filling layer becomes lower than in the case where the recessed portion of the pattern is filled with the filling layer without forming the sacrificial layer. Therefore, after vaporizing the sacrificial layer, the filling layer can be easily peeled off from the patterned surface. As a result, the time required for drying the substrate can be shortened.

In one embodiment of the present invention, the vaporization process includes a gap formation process that forms a gap between the surface of the pattern and the filling layer by vaporizing the sacrificial layer. Therefore, by vaporizing the sacrificial layer, the adhesion between the pattern and the filling layer can be further reduced. Therefore, the filling layer can be more easily peeled off from the patterned surface.

In one embodiment of the present invention, the sacrificial layer forming process includes a sacrificial layer forming liquid supply process that supplies a sacrificial layer that reacts with the pattern to form the sacrificial layer on the pattern forming surface liquid. Therefore, by supplying the sacrificial layer forming liquid to the pattern forming surface, the sacrificial layer forming liquid can be allowed to enter each corner of the concave portion. Therefore, a sacrificial layer that imitates the surface of the pattern can be reliably formed.

In one embodiment of the present invention, the substrate processing method further includes a removal liquid supply process that removes the sacrifice from the patterned surface after forming the sacrificial layer and before performing the filling layer forming process The removal liquid of the layer forming liquid is supplied to the pattern forming surface. Therefore, the sacrificial layer forming liquid that does not contribute to the formation of the sacrificial layer can be removed from the pattern forming surface before the filling layer is formed. Therefore, the influence of the sacrificial layer forming liquid on the formation of the filling layer can be reduced.

In one embodiment of the present invention, the gasification process includes a heating gasification process that heats the sacrificial layer via the substrate, thereby vaporizing the sacrificial layer. Therefore, a simple method of heating the substrate can be used to vaporize the sacrificial layer.

In one embodiment of the present invention, the filling layer forming process includes a filling process in which the filling layer forming liquid is filled in the concave portion by supplying a filling layer forming liquid to the pattern forming surface; and a curing process, which The filling layer forming liquid on the pattern forming surface is cured to form the filling layer.

According to this method, by supplying the filling layer forming liquid to the pattern forming surface, the filling layer forming liquid can enter each corner of the concave portion. Thereby, the liquid component remaining in the concave portion can be replaced with the filling layer forming liquid. After the filling layer forming liquid is cured in this state to form the filling layer, the filling layer is peeled off, whereby the substrate can be dried well.

In one embodiment of the present invention, the substrate processing method further includes a substrate holding process for holding the substrate horizontally. Moreover, the filling layer forming process includes a spin-out process, which rotates the substrate held horizontally around the vertical direction after the concave portion is filled with the fill layer forming liquid and before the curing process is performed The axis rotates, thereby excluding a part of the filling layer forming liquid from the pattern forming surface.

According to this method, the centrifugal force generated by the rotation of the substrate is used to exclude a part of the filling layer forming liquid from the pattern forming surface. Therefore, the amount of the filling layer forming liquid on the pattern forming surface is reduced. Therefore, the time required for curing of the filling layer forming liquid can be shortened.

In one embodiment of the present invention, the curing process includes a heating and curing process that heats the filling layer forming liquid on the pattern forming surface via the substrate, thereby filling the filling on the pattern forming surface The layer forming liquid solidifies. Therefore, a simple method of heating the substrate can be used to solidify the filling layer forming liquid to form the filling layer.

In one embodiment of the present invention, the gasification process includes a heating gasification process that heats the sacrificial layer via the substrate, thereby vaporizing the sacrificial layer. Furthermore, the filling layer forming process includes a filling process which supplies a filling layer forming liquid with a curing temperature lower than the vaporization temperature of the sacrificial layer to the pattern forming surface, thereby filling the filling layer forming liquid into the concave portion And a heat curing process, which heats the filling layer forming liquid on the pattern forming surface via the substrate, thereby curing the filling layer forming liquid on the pattern forming surface to form the filling layer.

According to this method, a simple method of heating the substrate can also be used to solidify the filling layer forming liquid to form the filling layer. Also, the sacrificial layer can be vaporized. In addition, the solidification temperature of the filling layer forming liquid is lower than the vaporization temperature of the sacrificial layer, so it is possible to prevent the sacrificial layer from being vaporized before the filling layer forming liquid solidifies. In addition, the sacrificial layer is vaporized after the filling layer forming liquid is cured by heating. Therefore, when the heating of the sacrificial layer is started, the sacrificial layer has been heated by heating to achieve the solidification of the filling layer forming liquid. Therefore, the time required for the heating of the gasification of the sacrificial layer can be shortened.

In addition, by supplying the filling layer forming liquid to the pattern forming surface, the filling layer forming liquid can enter each corner of the concave portion. Thereby, the liquid component remaining in the concave portion can be replaced with the filling layer forming liquid. After the filling layer forming liquid is cured in this state to form the filling layer, the filling layer is peeled off, whereby the substrate can be dried well.

In one embodiment of the present invention, there is provided a substrate processing apparatus which dries a substrate having a pattern forming surface formed with a pattern having concave portions, and the substrate processing apparatus includes: a sacrificial layer forming unit, Forming a sacrificial layer imitating the surface of the pattern on the pattern forming surface; filling layer forming unit, forming a filling layer filling the concave portion of the pattern on the pattern forming surface on which the sacrificial layer is formed; vaporizing unit, which Vaporizing the sacrificial layer on the substrate on which the filler layer is formed; and a peeling unit that peels the filler layer from the pattern-forming surface of the substrate on which the sacrificial layer has been vaporized.

According to this configuration, the unit for forming the filling layer fills the concave portion of the pattern on the pattern forming surface on which the sacrificial layer is formed with the filling layer. Therefore, the filling layer is formed in a state where a sacrificial layer is interposed between the surface of the pattern and not in a state of being in close contact with the surface of the pattern. Furthermore, by vaporizing the sacrificial layer on the pattern forming surface on which the filling layer is formed by the vaporization unit, the sacrificial layer disappears from between the surface of the pattern and the filling layer. Therefore, the degree of adhesion between the pattern and the filling layer becomes lower than in the case where the recessed portion of the pattern is filled with the filling layer without forming the sacrificial layer. Therefore, the peeling unit can easily peel the filling layer from the vaporized pattern forming surface of the sacrificial layer. As a result, the time required for drying the substrate can be shortened.

In one embodiment of the present invention, the vaporization unit vaporizes the sacrificial layer to form a gap between the surface of the pattern and the filling layer. Therefore, by vaporizing the sacrificial layer, the adhesion between the pattern and the filling layer can be further reduced. Therefore, the filling layer can be more easily peeled off from the patterned surface.

In one embodiment of the present invention, the sacrificial layer forming unit includes a sacrificial layer forming liquid supply unit that supplies the sacrificial layer forming liquid to the pattern forming surface. Therefore, by supplying the sacrificial layer forming liquid to the pattern forming surface, the sacrificial layer forming liquid can be allowed to enter each corner of the concave portion. Therefore, a sacrificial layer that imitates the surface of the pattern can be reliably formed.

In one embodiment of the present invention, the substrate processing apparatus further includes a removal liquid supply unit that supplies the removal liquid for removing the sacrificial layer formation liquid from the pattern formation surface to the pattern formation surface. Therefore, the sacrificial layer forming liquid that does not contribute to the formation of the sacrificial layer can be removed from the pattern forming surface before the filling layer is formed. Therefore, the influence of the sacrificial layer forming liquid on the formation of the filling layer can be reduced.

In one embodiment of the present invention, the vaporization unit includes a sacrificial layer heating unit that heats the sacrificial layer via the substrate. Therefore, a simple method of heating the substrate can be used to vaporize the sacrificial layer.

In one embodiment of the present invention, the filling layer forming unit includes a filling layer forming liquid supply unit that supplies a filling layer forming liquid to the pattern forming surface to fill the concave portion with the filling layer forming liquid; and a curing unit, This solidifies the filling layer forming liquid on the pattern forming surface.

According to this configuration, by supplying the filling layer forming liquid from the filling layer forming liquid supply unit to the pattern forming surface, the filling layer forming liquid can enter each corner of the concave portion. Thereby, the liquid component remaining in the concave portion can be replaced with the filling layer forming liquid. After the filling layer forming liquid is cured in this state to form the filling layer, the filling layer is peeled off, whereby the substrate can be dried well.

In one embodiment of the present invention, the substrate processing apparatus further includes: a substrate holding unit that holds the substrate horizontally; and a substrate rotation unit that rotates the substrate held horizontally around a rotation axis along the vertical direction Spin. In addition, the substrate rotating unit rotates the substrate filled with the filling layer forming liquid in the concave portion, thereby excluding the filling layer forming liquid from the pattern forming surface while maintaining the state in which the concave portion is filled with the filling layer forming liquid Part.

According to this configuration, the centrifugal force generated by the rotation of the substrate is used to exclude a part of the filling layer forming liquid from the pattern forming surface. Therefore, the amount of the filling layer forming liquid on the pattern forming surface is reduced. Therefore, the time required for curing of the filling layer forming liquid can be shortened.

In one embodiment of the present invention, the curing unit includes a filling layer forming liquid heating unit that heats the filling layer forming liquid via the substrate. Therefore, a simple method of heating the substrate can be used to solidify the filling layer forming liquid to form the filling layer.

In one embodiment of the present invention, the vaporization unit includes a sacrificial layer heating unit that heats the sacrificial layer via the substrate. Furthermore, the filling layer forming unit includes: a filling layer forming liquid supply unit that supplies a filling layer forming liquid whose curing temperature is lower than the vaporization temperature of the sacrificial layer to the pattern forming surface; and a filling layer forming liquid heating unit, which The filling layer forming liquid is heated across the substrate.

According to this structure, the filling layer can be formed by curing the filling layer forming liquid by a simple method of heating the substrate by the filling layer forming liquid heating unit. Furthermore, the sacrificial layer on the patterned surface on which the filling layer is formed can be vaporized by a simple method of heating the substrate using the sacrificial layer heating unit. In addition, since the curing temperature of the filling layer forming liquid is lower than the vaporization temperature of the sacrificial layer, it is possible to prevent the sacrificial layer from being vaporized before the filling layer forming liquid is cured when the substrate is heated by the sacrificial layer heating unit. In addition, when the heating of the sacrificial layer is started, the sacrificial layer has been heated by the heating performed to form the filling layer forming liquid. Therefore, the time required for the heating of the gasification of the sacrificial layer can be shortened.

In addition, by supplying the filling layer forming liquid to the pattern forming surface from the filling layer forming liquid supply unit, the filling layer forming liquid can be allowed to enter each corner of the concave portion. Thereby, the liquid component remaining in the concave portion can be replaced with the filling layer forming liquid. After the filling layer forming liquid is cured in this state to form the filling layer, the filling layer is peeled off, whereby the substrate can be dried well.

The above or further other objects, features, and effects of the present invention will be made clear by the following description with reference to the embodiments described in the accompanying drawings.

FIG. 1A is a schematic plan view for explaining the structure of the substrate processing apparatus 1 according to the first embodiment of the present invention. FIG. 1B is a schematic elevation view for explaining the structure of the substrate processing apparatus 1.

Referring to FIG. 1A, a substrate processing apparatus 1 is a monolithic apparatus that performs various processes such as a cleaning process or an etching process on a substrate W such as a semiconductor wafer. The substrate W processed by the substrate processing apparatus 1 has a first main surface W1 and a second main surface W2 that is a main surface opposite to the first main surface W1 (see FIG. 1B ). The first principal surface W1 is a pattern forming surface on which a pattern is formed. No pattern is formed on the second main surface W2.

As shown in FIG. 2, a fine pattern 161 is formed on the first main surface W1 of the substrate W. The pattern 161 includes fine convex structures 162 formed on the surface of the substrate W. The structure 162 may include an insulator film or a conductor film. In addition, the structure 162 may be a laminated film obtained by laminating a plurality of films. When the linear structures 162 are adjacent to each other, a concave portion (groove) 163 is formed between them. In this case, the width L1 of the structure 162 may be about 10 nm to 45 nm, and the interval L2 between the structures 162 may be about 10 nm to several μm. The height T of the structure 162 may be, for example, about 50 nm to 5 μm. The surface of the pattern 161 includes the surface of the structure 162 and the bottom surface of the recess 163. When the structure 162 is cylindrical, a concave portion is formed inside.

Referring again to FIG. 1A, the substrate processing apparatus 1 includes a plurality of (four in this embodiment) processing towers 2 that process the substrate W with a processing liquid. The processing liquid includes the following chemical liquid, rinsing liquid, amphiphilic organic solvent, sacrificial layer forming liquid, filling layer forming liquid, cleaning liquid, and the like. The plural processing towers 2 have the same configuration, for example.

The substrate processing apparatus 1 further includes: a loading port LP for mounting a carrier C that houses a plurality of substrates W processed by the processing tower 2; and transport robots IR and CR, which are equal to the loading port LP The substrate W is transported between the processing tower 2; the controller 3, which controls the substrate processing apparatus 1; the transport path 5, which extends in the horizontal direction; and the reversing unit 6, which reverses the front and back of the substrate W.

The transport path 5 extends linearly from the transport robot IR toward the transport robot CR. The transfer robot IR transfers the substrate W between the carrier C and the transfer robot CR. The transfer robot CR transfers the substrate W between the transfer robot IR and the processing tower 2.

The plurality of processing towers 2 are arranged symmetrically with the conveying path 5 in between. A plurality of processing towers 2 are arranged on both sides of the transport path 5 along the direction in which the transport path 5 extends (elongation direction X). In this embodiment, two processing towers 2 are arranged on both sides of the conveying path 5. The reversing unit 6 is disposed at the position farthest from the transport robot IR in the transport path 5.

The processing tower 2 includes a liquid processing unit M, a first heating unit D1, and a second heating unit D2. In this embodiment, two liquid processing units M are provided in each processing tower 2.

1B, in the processing tower 2, two liquid processing units M, a first heating unit D1, and a second heating unit D2 are stacked up and down. In the processing tower 2, the liquid processing unit M, the liquid processing unit M, the first heating unit D1, and the second heating unit D2 are arranged in this order from the lower side.

FIG. 3 is a schematic cross-sectional view for explaining a configuration example of the liquid processing unit M. FIG. The liquid processing unit M includes a chamber R1, a rotary chuck 10, a processing cup 11, a first moving nozzle 12, a second moving nozzle 13, a first fixed nozzle 14, and a plurality of second fixed nozzles 15. The rotating chuck 10, the processing cup 11, the first moving nozzle 12, the second moving nozzle 13, the first fixed nozzle 14, and the plurality of second fixed nozzles 15 are arranged in the chamber R1.

The rotating chuck 10 includes a rotating base 21, a rotating shaft 22, and a rotating motor 23 that imparts rotating force to the rotating shaft 22. The rotating shaft 22 is a hollow shaft. The rotation shaft 22 extends in the vertical direction along the rotation axis A1. A rotating base 21 is coupled to the upper end of the rotating shaft 22. The rotating base 21 has a disc-shaped disk portion 21A along the horizontal direction, and a cylindrical portion 21B externally fitted to the upper end of the rotating shaft 22. The diameter of the upper surface of the circular plate portion 21A is smaller than the diameter of the substrate W.

The rotary chuck 10 further includes a suction unit 27 that attracts the substrate W disposed on the upper surface of the rotary base 21 to hold the substrate W on the rotary base 21. A suction path 25 is inserted into the rotating base 21 and the rotating shaft 22. The suction path 25 has a suction port 24 exposed from the center of the upper surface of the rotating base 21. The suction path 25 is connected to the suction tube 26. The suction tube 26 is connected to a suction unit 27 such as a vacuum pump. A suction valve 28 for opening and closing the path is interposed in the suction pipe 26. The spin chuck 10 is an example of a substrate holding unit for holding the substrate W horizontally.

By rotating the rotating shaft 22 by the rotating motor 23, the rotating base 21 is rotated. Thereby, the substrate W rotates around the rotation axis A1. The rotation motor 23 is an example of a substrate rotation unit that rotates the substrate W about the rotation axis A1.

On the side wall 30 of the chamber R1, an entrance 31 is formed for carrying the substrate W in and out using the transfer robot CR. In the chamber R1, a shutter 32 for opening and closing the entrance 31 is provided. The shutter 32 is opened and closed by the shutter opening and closing unit 33.

The processing receiving cup 11 includes: a plurality of shields 16 which receive the liquid scattered outward from the substrate W held on the rotating chuck 10; and a plurality of support cups 17 which receive the liquid shielded by the plurality of shields 16 and are directed downward Of liquid. In this embodiment, an example in which two shields 16 (first shield 16A and second shield 16B) and two bearing cups 17 (first bearing cup 17A and second bearing cup 17B) are provided .

Each of the first receiving cup 17A and the second receiving cup 17B has a groove-like form that opens upward. The first shield 16A surrounds the rotating base 21. The second shield 16B surrounds the rotation base 21 on the outer side of the first shield 16A. The first cup 17A receives the liquid guided downward by the first shield 16A. The second cup 17B receives the liquid guided downward by the second shield 16B. A recovery pipe (not shown) or a discharge pipe (not shown) is connected to the groove of each bearing cup 17. The first shield 16A and the second shield 16B can be individually raised and lowered by the shield lifting unit 36. The shroud lifting unit 36 includes, for example, a ball screw and a motor that provides driving force to the ball screw. The shield lifting unit 36 is also called a shield lifter.

The first moving nozzle 12 is an example of a chemical solution supply unit that supplies (discharges) a chemical solution toward the upper surface of the substrate W held on the rotary chuck 10. The chemical solution discharged from the first moving nozzle 12 is, for example, hydrofluoric acid.

The chemical solution discharged from the first moving nozzle 12 is not limited to hydrofluoric acid. That is, the chemical solution ejected from the first moving nozzle 12 may include sulfuric acid, acetic acid, nitric acid, hydrochloric acid, hydrofluoric acid, ammonia water, hydrogen peroxide water, organic acid (e.g. citric acid, oxalic acid, etc.), organic base (e.g. TMAH: tetramethylammonium hydroxide, etc.), a liquid of at least one of a surfactant and a corrosion inhibitor. Examples of the chemical solutions obtained by mixing these include SPM (sulfuric acid/hydrogen peroxide mixture) and SC1 (ammonia-hydrogen peroxide mixture: ammonia hydrogen peroxide water mixture).

The first moving nozzle 12 is connected to a chemical liquid pipe 40 that guides the chemical liquid. When the chemical liquid valve 50 interposed in the chemical liquid piping 40 is opened, the chemical liquid is continuously discharged downward from the first moving nozzle 12.

The first moving nozzle 12 is moved in the horizontal direction and the vertical direction by the first nozzle moving unit 37. The first movable nozzle 12 is movable between a center position and a rest position (retracted position). When the first movable nozzle 12 is at the center position, it faces the rotation center of the upper surface of the substrate W. The rotation center of the upper surface of the substrate W refers to a position where the upper surface of the substrate W crosses the rotation axis A1. When the first movable nozzle 12 is at the rest position, it does not face the upper surface of the substrate W, but is located outside the processing socket 11 in a plan view. The first moving nozzle 12 can approach the upper surface of the substrate W or retreat upward from the upper surface of the substrate W by moving in the vertical direction.

The first nozzle moving unit 37 includes, for example, a rotating shaft in the vertical direction, an arm portion that is coupled to the rotating shaft and extends horizontally, and a rotating shaft drive unit that raises or lowers the rotating shaft. The rotating shaft drive unit swings the arm by rotating the rotating shaft about a vertical rotating axis. Furthermore, the rotating shaft drive unit moves the arm up and down by raising and lowering the rotating shaft in the vertical direction. The first movable nozzle 12 is fixed to the arm. In accordance with the swing and elevation of the arm, the first moving nozzle 12 moves in the horizontal direction and the vertical direction.

The second moving nozzle 13 has a function as a sacrificial layer forming liquid supply unit that supplies (discharges) sacrifice to the upper surface (first main surface W1) of the substrate W held on the rotary chuck 10 Layer forming fluid. The second movable nozzle 13 further functions as an organic solvent supply unit that supplies (discharges) IPA (isopropylene) toward the upper surface (first main surface W1) of the substrate W held by the rotary chuck 10 Alcohol) and other amphiphilic organic solvents. The second movable nozzle 13 further functions as a filling layer forming liquid supply unit that supplies (ejects) toward the upper surface (first main surface W1) of the substrate W held by the rotary chuck 10 Filling layer forming liquid.

The sacrificial layer forming liquid reacts with the SiO ₂ film formed on the surface of the pattern 161 (refer to FIG. 2) on the first main surface W1 of the substrate W to form a sacrificial layer. As the sacrificial layer forming liquid, the thermal decomposition temperature (gasification temperature) of the sacrificial layer is, for example, about 500°C. The sacrificial layer decomposes and vaporizes when it reaches the thermal decomposition temperature. The sacrificial layer can also be vaporized by sublimation. Examples of the sacrificial layer forming liquid include a hydrophobizing agent that hydrophobizes the surface of the substrate W.

As the hydrophobizing agent, for example, a silicon-based hydrophobizing agent that hydrophobizes silicon itself and the silicon-containing compound, or a metal-based hydrophobizing agent that hydrophobizes the metal itself and the metal-containing compound can be used. The metal-based hydrophobizing agent includes, for example, at least one of an amine having a hydrophobic group and an organic silicon compound. The silicon-based hydrophobizing agent is, for example, a silane coupling agent. The silane coupling agent includes, for example, at least one of HMDS (hexamethyldisilazane), TMS (tetramethylsilane), fluorinated alkylchlorosilane, alkyldisilazane, and a non-chlorine-based hydrophobizing agent. Non-chlorine-based hydrophobizing agents include, for example, dimethylsilyldimethylamine, dimethylsilyldiethylamine, hexamethyldisilazane, tetramethyldisilazane, bis(dimethylamine At least one of dimethyl silane, N,N-dimethylaminotrimethyl silane, N-(trimethyl silane) dimethyl amine and organic silane compound.

The sacrificial layer forming liquid may contain a hydrophobizing agent as a solute and a solvent to dissolve the hydrophobizing agent. Examples of the solvent include organic solvents such as PGMEA (propylene glycol monomethyl ether acetate).

The filling layer forming liquid is a liquid that forms a filling layer by solidification. "Curing" includes, for example, solidification of solutes by forces acting between molecules accompanying evaporation of solvents; and solidification (hardening) of substances by chemical changes such as polymerization or crosslinking.

The filling layer forming liquid hardened by chemical changes such as polymerization or cross-linking contains a thermosetting substance hardened by heating or a photohardening substance hardened by irradiation of light. Hereinafter, the thermosetting substance and the photocuring substance may be collectively referred to as a curable substance. As the liquid containing the hardening substance, for example, a melt of the hardening substance or the like which contains the hardening substance in a molten state or a solution obtained by dissolving the hardening substance as a solute in a solvent can be used. Here, the "melted state" refers to a state in which the hardenable substance is completely or partially dissolved and has fluidity. Examples of the curable substance in the melted state include fluid organic polymers.

Examples of the liquid used as the solvent for the filling layer forming liquid include PGMEA and the like. In this embodiment, an example in which the filling layer forming liquid contains a thermosetting substance will be described. As the thermosetting substance, a thermosetting temperature (curing temperature) that is lower than the thermal decomposition temperature of the sacrificial layer (for example, about 200°C) is used.

As the amphiphilic organic solvent, a liquid (which lacks reactivity) that does not chemically react with the upper surface of the substrate W and the pattern 161 formed on the substrate W can be used. The amphiphilic organic solvent is preferably compatible with each of the sacrificial layer forming liquid and the filling layer forming liquid.

The second moving nozzle 13 is connected to the following members: a sacrificial layer forming liquid pipe 41 that guides the sacrificial layer forming liquid; a filling layer forming liquid pipe 42 that guides the filling layer forming liquid; and an organic solvent pipe 43 that guides the organic solvent. When the sacrificial layer forming liquid valve 51 interposed in the sacrificial layer forming liquid piping 41 is opened, the sacrificial layer forming liquid is continuously discharged downward from the second moving nozzle 13. When the filling layer forming liquid valve 52 interposed in the filling layer forming liquid pipe 42 is opened, the filling layer forming liquid is continuously discharged downward from the second moving nozzle 13. When the organic solvent valve 53 installed in the organic solvent piping 43 is opened, the organic solvent is continuously discharged downward from the second moving nozzle 13.

The second moving nozzle 13 is moved in the horizontal direction and the vertical direction by the second nozzle moving unit 38. The second movable nozzle 13 is movable between a center position and a rest position (retracted position). When the second moving nozzle 13 is at the center position, it faces the rotation center of the upper surface of the substrate W. When the second movable nozzle 13 is at the rest position, it does not face the upper surface of the substrate W, but is located outside the processing socket 11 in a plan view. The second moving nozzle 13 can approach the upper surface of the substrate W or retreat upward from the upper surface of the substrate W by moving in the vertical direction.

The second nozzle moving unit 38 has the same configuration as the first nozzle moving unit 37. That is, the second nozzle moving unit 38 includes, for example, a rotating shaft in the vertical direction, an arm portion that extends horizontally in conjunction with the rotating shaft and the second moving nozzle 13, and a rotating shaft that raises or lowers the rotating shaft Axis drive unit.

The first fixed nozzle 14 is included in a rinse liquid supply unit that supplies (discharges) the rinse liquid toward the upper surface (first main surface W1) of the substrate W held on the rotary chuck 10. The rinse liquid is, for example, DIW (pure water). As the rinsing liquid, in addition to DIW, carbonated water, electrolytic ionized water, hydrogen water, ozone water, ammonia water, hydrochloric acid water with a diluted concentration (for example, about 10 ppm to 100 ppm), and the like can also be mentioned.

The first fixed nozzle 14 is connected to a rinse liquid pipe 44 that guides the rinse liquid. When the flushing liquid valve 54 interposed in the flushing liquid pipe 44 is opened, the flushing liquid is continuously discharged downward from the discharge port of the first fixed nozzle 14.

The plurality of second fixed nozzles 15 are arranged at intervals in the rotation direction about the rotation axis A1. The second fixed nozzle 15 is included in a cleaning liquid supply unit that supplies (discharges) cleaning liquid such as IPA toward the peripheral portion of the lower surface of the substrate W (second main surface W2). The cleaning liquid is a liquid for cleaning the peripheral portion on the lower surface of the substrate W. The sacrificial layer forming liquid or the filling layer forming liquid adhering to the peripheral portion of the lower surface of the substrate W can be removed by the cleaning liquid.

The second fixed nozzles 15 are connected one by one to a plurality of cleaning liquid pipes 45 that guide the cleaning liquid. When the cleaning liquid valve 55 interposed in the cleaning liquid pipe 45 is opened, the cleaning liquid is continuously discharged upward from the discharge port of the second fixed nozzle 15.

4 is a schematic cross-sectional view for explaining a configuration example of the first heating unit D1. The first heating unit D1 includes: a chamber R2; a first substrate holder 60, which holds the substrate W; a first heater 61, which heats the substrate W; and a plurality of first ejection pins 62, which etc. make the substrate W move up and down.

The first substrate holder 60 is a plate-shaped member that supports the substrate W from below with the substrate W in a horizontal posture. The first substrate holder 60 is accommodated in the chamber R2.

The first heater 61 is built in the first substrate holder 60. The first heater 61 heats the substrate W by heat transfer or heat radiation. The first heater 61 is connected to a first heater energizing unit 63 that supplies power to the first heater 61. The first heater energizing unit 63 includes a power source and a wire connecting the power source and the first heater 61. The first heater 61 only needs to be able to heat the substrate W to the thermal curing temperature of the filling layer forming liquid. Instead of the first heater 61, an electromagnetic wave irradiation unit that irradiates electromagnetic waves (ultraviolet, infrared, microwave, X-ray, laser light, etc.) to heat the substrate W may be used.

The plurality of first jacking pins 62 are inserted into the plurality of through holes penetrating the first substrate holder 60, respectively. The plurality of first jacking pins 62 are raised and lowered between the upper position and the lower position by the first jacking pin lifting unit 68. The first jacking pin lifting unit 68 includes, for example, a ball screw and a motor that provides driving force to the ball screw. The first jack-up pin lift unit 68 may also be referred to as a first jack-up pin lifter.

When the plurality of first jacking pins 62 are located at the upper position, the substrate W is separated upward from the first substrate holder 60. When the plurality of first jacking pins 62 are in the lower position, the upper ends of the plurality of first jacking pins 62 are retracted into the interior of the first substrate holder 60. Therefore, the substrate W is supported by the first substrate holder 60 from below.

The chamber R2 has a first base portion 64 and a first movable cover portion 65 that moves up and down relative to the first base portion 64. The internal space 66 of the chamber R2 is divided by the first base portion 64 and the first movable cover portion 65. The first movable cover 65 is moved up and down between the upper position and the lower position by the first cover drive unit 67. The first cover driving unit 67 includes, for example, a ball screw and a motor that provides driving force to the ball screw.

When the first movable cover portion 65 is at the lower position, the first base portion 64 is in contact with the first movable cover portion 65, and the chamber R2 is closed. When the first movable cover 65 is at the upper position, the chamber R2 is opened. When the chamber R2 is opened, the transfer robot CR can access the internal space 66 of the chamber R2. In this state, the plurality of first lift pins 62 are positioned at the upper position to separate the substrate W from the first substrate holder 60, whereby the transport robot CR can receive the substrate W from the first lift pins 62, or The substrate W is delivered to the first jacking pin 62.

FIG. 5 is a schematic cross-sectional view for explaining a configuration example of the second heating unit D2.

The second heating unit D2 includes: a chamber R3; a second substrate holder 70, which holds the substrate W; a second heater 71, which heats the substrate W; and a plurality of second jack-up pins 72, which etc. make the substrate W move up and down.

The second substrate holder 70 is a plate-shaped member that supports the substrate W from below with the substrate W in a horizontal posture. The second substrate holder 70 is accommodated in the chamber R3.

The second heater 71 is built in the second substrate holder 70. The second heater 71 heats the substrate W by heat transfer or heat radiation. The second heater 71 is connected to a second heater energizing unit 73 that supplies power to the second heater 71. The second heater energizing unit 73 includes a power source and a wire connecting the power source and the second heater 71. The second heater 71 should just heat the substrate W to the thermal decomposition temperature of the sacrificial layer.

Instead of the second heater 71, an electromagnetic wave irradiation unit that irradiates electromagnetic waves (ultraviolet, infrared, microwave, X-ray, laser light, etc.) to heat the substrate W may be used.

The plurality of second jacking pins 72 are inserted into the plurality of through holes penetrating the second substrate holder 70, respectively. The plurality of second jacking pins 72 are raised and lowered between the upper position and the lower position by the second jacking pin lifting unit 78. The second jack-up pin lifting unit 78 includes, for example, a ball screw and a motor that provides driving force to the ball screw. The second jack-up pin lifting unit 78 may also be referred to as a second jack-up pin lifter.

When the plurality of second lift pins 72 are in the upper position, the substrate W is separated upward from the second substrate holder 70. When the plurality of second jack-up pins 72 are in the lower position, the upper ends of the plurality of second jack-up pins 72 are retracted into the interior of the second substrate holder 70. Therefore, the substrate W is supported by the second substrate holder 70 from below.

The chamber R3 has a second base portion 74 and a second movable cover portion 75 that moves up and down relative to the second base portion 74. The internal space 76 of the chamber R3 is divided by the second base portion 74 and the second movable cover portion 75. The second movable cover 75 is moved up and down between the upper position and the lower position by the second cover drive unit 77. The second cover driving unit 77 includes, for example, a ball screw and a motor that provides driving force to the ball screw.

When the second movable cover portion 75 is at the lower position, the second base portion 74 is in contact with the second movable cover portion 75, and the chamber R3 is closed. When the second movable cover 75 is in the upper position, the chamber R3 is opened. When the chamber R3 is opened, the transfer robot CR can access the internal space 76 of the chamber R3. In this state, the plurality of second lift pins 72 are positioned at the upper position to separate the substrate W from the second substrate holder 70, whereby the transport robot CR can receive the substrate W from the second lift pin 72, or The substrate W is delivered to the second jacking pin 72.

FIG. 6 is a schematic plan view for explaining a configuration example of the turning unit 6. The reversing unit 6 includes: a pair of clamping members 80 which clamp the substrate W; a clamping member rotating unit 81 which rotates the pair of clamping members 80; and a clamping member moving unit 82 which clamps the pair of members One of the members 80 contacts/separates (moves) with respect to the substrate W.

The clamping member 80 includes an abutting portion 80a that abuts on the periphery of the substrate W, and a shaft portion 80b that is connected to the abutting portion 80a. The contact portions 80a of the pair of clamping members 80 face each other across the center of the first main surface W1 of the substrate W. The shaft portion 80b of the clamping member 80 is rotatably supported by the support member 84 via a bearing 83. The rotation center axis A2 of the shaft portion 80b of the pair of clamping members 80 is common, and passes through the center of the substrate W. The clamping member rotating unit 81 includes a motor that imparts a rotational force to the shaft portion 80b of a clamping member 80. The clamping member moving unit 82 includes an air cylinder that moves the contact portion 80a of one clamping member 80 relative to the shaft portion 80b of one clamping member 80 toward the other clamping member 80 side.

The clamping member moving unit 82 moves the contact portion 80a of a clamping member 80 relative to the shaft portion 80b of a clamping member 80, and abuts the contact portion 80a of a clamping member 80 against the periphery of the substrate W. Thereby, the substrate W is clamped by the pair of clamp members 80. In this state, the clamping member rotating unit 81 applies a rotational force to the shaft portion 80b of one clamping member 80, whereby the substrate W rotates about the rotation center axis A2. Thereby, the substrate W can be reversed.

7 is a block diagram for explaining the electrical structure of the main part of the substrate processing apparatus 1. The controller 3 includes a microcomputer, and controls the control target of the substrate processing apparatus 1 according to a specific program. More specifically, the controller 3 is configured to include a processor (CPU) 3A and a memory 3B in which programs are stored, and the processor 3A executes the programs to perform various controls for substrate processing.

In particular, the controller 3 controls the transport robots IR, CR, suction unit 27, rotary motor 23, shutter opening and closing unit 33, hood lifting unit 36, first nozzle moving unit 37, second nozzle moving unit 38, first Cover drive unit 67, second cover drive unit 77, first jack-up pin lift unit 68, second jack-up pin lift unit 78, first heater energizing unit 63, second heater energizing unit 73, clamp Component rotating unit 81, clamping member moving unit 82 and suction valve 28, chemical liquid valve 50, sacrificial layer forming liquid valve 51, filling layer forming liquid valve 52, organic solvent valve 53, flushing liquid valve 54, cleaning liquid valve 55, etc. 'S action. By controlling the chemical liquid valve 50, the sacrificial layer forming liquid valve 51, the filling layer forming liquid valve 52, the organic solvent valve 53, the rinse liquid valve 54 and the cleaning liquid valve 55, the discharge of the fluid from the corresponding nozzle is controlled.

FIG. 8 is a flowchart for explaining an example of substrate processing performed by the substrate processing apparatus 1, mainly showing processing realized by the controller 3 executing a program.

In the substrate processing performed by the substrate processing apparatus 1, for example, as shown in FIG. 8, the chemical solution processing (step S1), the rinse processing (step S2), and the drying processing (step S3) are sequentially performed.

First, in the substrate processing performed by the substrate processing apparatus 1, the substrate W is carried into the liquid processing unit M of the processing tower 2 from the carrier C by the transfer robots IR and CR (see FIG. 1). Then, the suction by the suction unit 27 is started, and the substrate W is transferred to the rotary chuck 10 with the suction valve 28 opened.

The substrate W is held horizontally by the rotary chuck 10 until it is carried out by the transfer robot CR (substrate holding process). The substrate W is held by the rotary chuck 10 with the first main surface W1 facing upward. Then, the rotation motor 23 starts the rotation of the rotation base 21. With this, the rotation of the substrate W starts (substrate rotation process). The rotation speed of the substrate W is, for example, 300 rpm to 500 rpm. The rotation of the substrate W continues until it is carried out by the conveying robot CR.

Then, the chemical solution processing is started (step S1). Specifically, the first nozzle moving unit 37 moves the first moving nozzle 12 to the center position. Then, the liquid medicine valve 50 is opened. Thereby, the chemical liquid is supplied from the first moving nozzle 12 to the central region of the first main surface W1 (upper surface) of the substrate W in the rotating state (chemical liquid supply process). The chemical solution is spread over the entire first main surface W1 of the substrate W by centrifugal force.

Next, the flushing process is executed (step S2). In the rinsing process, the chemical solution on the substrate W is rinsed with a rinse solution such as DIW.

Specifically, the chemical liquid valve 50 is closed. With this, the discharge of the chemical solution from the first moving nozzle 12 is stopped. Then, the flushing fluid valve 54 is opened. Thereby, the rinse liquid is supplied from the first fixed nozzle 14 toward the central region of the upper surface of the substrate W in the rotating state (rinsing liquid supply process). The rinse liquid is spread over the entire upper surface of the substrate W by centrifugal force. As a result, the chemical solution on the substrate W is replaced by the rinse solution.

Next, a drying process to dry the substrate W is performed (step S3). Hereinafter, the drying treatment will be specifically described. 9 is a flowchart for explaining an example of the drying process (step S3). In the drying process (step S3) performed by the substrate processing apparatus 1, for example, as shown in FIG. 9, the organic solvent replacement process (step S31), the sacrificial layer forming liquid supply process (step S32), and the removal liquid supply are sequentially performed Process (step S33), filling process (step S34), spin-out process (step S35), heat curing process (step S36), heat vaporization process (step S37) and peeling process (step S38).

10A to 10H are schematic cross-sectional views for explaining an example of the drying process (step S3). 11A to 11G are schematic cross-sectional views for explaining the change in the structure of the first main surface W1 of the substrate W in an example of the drying process (step S3).

In the drying process (step S3), first, referring to FIG. 10A, the second nozzle moving unit 38 moves the second moving nozzle 13 to the center position. Then, the flushing liquid valve 54 (refer to FIG. 3) is closed. As a result, the discharge of the flushing liquid from the first fixed nozzle 14 (see FIG. 3) is stopped. Then, the organic solvent valve 53 is opened. As a result, the organic solvent 180 is ejected (supplied) from the second moving nozzle 13 toward the center region of the first main surface W1 of the substrate W in the rotating state. The organic solvent 180 is spread over the entire upper surface of the substrate W by centrifugal force. Thereby, the rinse liquid on the substrate W is replaced by the organic solvent 180 (the organic solvent replacement process of FIG. 9 (step S31)). The rinse liquid entering the plurality of concave portions 163 of the pattern 161 is also replaced by the organic solvent 180 (refer to FIG. 11A).

Then, the organic solvent valve 53 is closed. With this, the ejection (supply) of the organic solvent from the second moving nozzle 13 is stopped. Instead, as shown in FIG. 10B, the sacrificial layer forming liquid valve 51 is opened. As a result, the sacrificial layer forming liquid 181 is ejected (supplied) from the second moving nozzle 13 toward the center region of the first main surface W1 of the rotating substrate W (sacrificial layer forming liquid supply process (step S32)). The sacrificial layer forming liquid 181 is spread over the entire upper surface (first main surface W1) of the substrate W by centrifugal force. As a result, the organic solvent 180 on the substrate W is replaced by the sacrificial layer forming liquid 181.

As shown in FIG. 11B, the organic solvent 180 entering the plurality of concave portions 163 in the pattern 161 is also replaced by the sacrificial layer forming liquid 181. Then, the pattern 161 on the substrate W reacts with the sacrificial layer forming solution 181 to form a sacrificial layer 170 (sacrificial layer forming process) on the first main surface W1 that imitates the surface of the pattern 161. The sacrificial layer 170 is solid. The sacrificial layer 170 may be a monomolecular layer having a thickness equivalent to one molecule of the hydrophobizing agent. In this way, the second movable nozzle 13 functions as a sacrificial layer forming unit that forms the sacrificial layer 170 on the first main surface W1 of the substrate W.

Then, the sacrificial layer formation liquid valve 51 is closed. With this, the ejection (supply) of the sacrificial layer forming liquid 181 from the second moving nozzle 13 is stopped. Instead, as shown in FIG. 10C, the organic solvent valve 53 is opened again. As a result, the organic solvent 180 is ejected (supplied) from the second moving nozzle 13 toward the center region of the first main surface W1 of the substrate W in the rotating state. The organic solvent 180 is spread over the entire upper surface of the substrate W by centrifugal force. As a result, the sacrificial layer forming liquid 181 on the substrate W is replaced with the organic solvent 180. In this way, it functions as the sacrificial layer forming liquid 181 removed from the first main surface W1. Further, the second moving nozzle 13 functions as a removing liquid supply unit, and the removing liquid supply process is performed by supplying the removing liquid from the second moving nozzle 13 toward the central region of the first main surface W1 of the substrate W in the rotating state (step S33) .

As shown in FIG. 11C, the sacrificial layer forming liquid 181 entering the plurality of concave portions 163 of the pattern 161 is also replaced by the organic solvent 180.

Then, the organic solvent valve 53 is closed. With this, the ejection (supply) of the organic solvent 180 from the second moving nozzle 13 is stopped. Instead, as shown in FIG. 10D, the filling layer forming liquid valve 52 is opened. As a result, the filling layer forming liquid 182 is ejected (supplied) from the second moving nozzle 13 toward the center region of the first main surface W1 of the rotating substrate W (filling layer forming liquid supply process (step S34)). The filling layer forming liquid 182 is spread over the entire upper surface of the substrate W by centrifugal force. Thereby, the organic solvent 180 on the substrate W is replaced with the filling layer forming liquid 182, and the liquid film 171 of the filling layer forming liquid 182 is formed on the substrate W.

As shown in FIG. 11D, the organic solvent entering the plurality of concave portions 163 of the pattern 161 is also replaced by the filling layer forming liquid 182, thereby filling the plurality of concave portions 163 of the pattern 161 with the filling layer forming liquid 182 (filling process). After the filling layer forming liquid 182 is filled in the concave portion 163 of the pattern 161, the state where the sacrificial layer 170 is formed on the first main surface W1 is also maintained.

Then, the filling layer forming liquid valve 52 is closed. As a result, as shown in FIG. 10E, the discharge (supply) of the filling layer forming liquid 182 from the second moving nozzle 13 is stopped. Then, the rotation motor 23 accelerates the rotation of the substrate W, and rotates the substrate W at a high speed. As a result, a part of the filling layer forming liquid 182 on the substrate W is excluded, and the liquid film 171 is thinned (spin-out process (step S35)).

Referring to FIG. 11E, after the liquid film 171 is thinned, the state in which the filling layer forming liquid 182 is filled in the concave portion 163 is also maintained. Preferably, the surface of the liquid film 171 is located above the upper end of the pattern 161 (the front end of the structure 162) to exclude the filling layer forming process. Furthermore, the spin-out process (step S35) is performed after the filling process is performed and before the curing process described below.

After the supply of the filling layer forming liquid 182 on the first main surface W1 is stopped, a plurality of cleaning liquid valves 55 may be opened. With this, the cleaning liquid is ejected (supplied) from the second fixed nozzle 15 toward the peripheral portion of the second main surface W2 of the substrate W to clean the peripheral portion of the second main surface W2 (peripheral portion cleaning process). In detail, the sacrificial layer forming liquid 181 or the filling layer forming liquid 182 flowing back from the peripheral portion of the first main surface W1 to the peripheral portion of the second main surface W2 is replaced with the cleaning liquid.

After the peripheral portion cleaning process for a certain period of time, the plurality of cleaning liquid valves 55 are closed, and the discharge of the cleaning liquid from the second fixed nozzle 15 to the peripheral portion of the second main surface W2 of the substrate W is stopped. Then, the rotation motor 23 stops the rotation of the substrate W. Then, the suction valve 28 is closed. Then, the transfer robot CR receives the substrate W from the rotary chuck 10 and carries the substrate W out of the liquid processing unit M.

The transfer robot CR transfers the substrate W transferred from the liquid processing unit M to the first heating unit D1. In the first heating unit D1, as shown in FIG. 10F, the substrate W is heated by the first heater 61 built in the first substrate holder 60. The first heater 61 heats the filling layer forming liquid 182 to the thermosetting temperature (curing temperature) of the filling layer forming liquid 182 through the interposer substrate W. As a result, the filling layer forming liquid 182 on the first main surface W1 of the substrate W is solidified to form the filling layer 172 filling the concave portion 163 (heating curing process (step S36), curing process). In this way, the filling layer forming liquid 182 can be cured to form the filling layer 172 by a simple method of heating the substrate W. In the present embodiment, the first heater 61 has a function as a filling layer forming liquid heating unit that heats the filling layer forming liquid 182 through the interposer substrate W, and a function as a curing unit that solidifies the filling layer forming liquid 182.

The filling layer 172 includes a plurality of entry portions 172b, which enter the respective recesses 163, and the like, and a connection portion 172a, which is provided outside (upper) the pattern 161 and connects the plurality of entry portions 172b.

Then, the transport robot CR carries out the substrate W from the first heating unit D1 and carries it into the second heating unit D2. In the second heating unit D2, as shown in FIG. 10G, the substrate W is heated by the second heater 71 built in the second substrate holder 70. The second heater 71 heats the sacrificial layer 170 to a thermal decomposition temperature of the sacrificial layer 170 higher than the thermal hardening temperature of the filling layer forming liquid via the substrate W. Thereby, the sacrificial layer 170 is decomposed and vaporized (heating vaporization process (step S37), vaporization process). Therefore, a simple method of heating the substrate W can be used to vaporize the sacrificial layer 170. In this way, the second heater 71 has a function as a sacrificial layer heating unit that heats the sacrificial layer 170 via the interposer substrate W, and a function as a vaporization unit that vaporizes the sacrificial layer 170.

By vaporizing the sacrificial layer 170, a gap 174 (see FIG. 11G) is formed between the filling layer 172 and the pattern 161 (gap formation process). The gap 174 is formed between the front end of the structure 162 and the connecting portion 172 a of the filling layer 172, and between the portion of the surface of the pattern 161 that divides the concave portion 163 and the entrance portion 172 b of the filling layer 172.

Then, the transfer robot CR transfers the substrate W from the second heating unit D2 and transfers it into the reversing unit 6. In the reversing unit 6, the clamping member moving unit 82 moves one clamping member 80 toward the other clamping member 80, whereby the substrate W is clamped by the pair of clamping members 80. Then, as shown in FIG. 10H, the clamping member rotating unit 81 rotates the substrate W by 180°. With this, the substrate W is held horizontally by the pair of clamping members 80 with the first main surface W1 facing downward. A gap 174 is formed between the filling layer 172 and the pattern 161, so the filling layer 172 is not in close contact with the surface of the pattern 161. Therefore, when the first main surface W1 faces downward, as shown in FIG. 11G, the filling layer 172 naturally falls. With this, the filling layer 172 is peeled off from the first main surface W1 (stripping process (step S38)). In this way, the reversing unit 6 functions as a peeling unit that peels the filling layer 172 from the first main surface W1.

After that, the substrate W is returned to the carrier C by the transfer robots CR and IR, thereby ending the substrate processing.

As described above, according to the present embodiment, after the sacrificial layer 170 imitating the surface of the pattern 161 is formed, the concave portion 163 of the pattern 161 is filled with the filling layer 172. Therefore, the filling layer 172 is formed in a state where the sacrificial layer 170 is interposed with the surface of the pattern 161, rather than being formed in a state in close contact with the surface of the pattern 161. Thereafter, by vaporizing the sacrificial layer 170 in a state where the filling layer 172 is formed, the sacrificial layer 170 disappears from between the surface of the pattern 161 and the filling layer 172.

Here, unlike the present embodiment, it is assumed that the substrate processing of the reference example in which the recess 163 of the pattern 161 is filled with the filling layer 172 without forming the sacrificial layer 170 is performed. The surface area of the pattern 161 provided with the concave portion 163 is relatively large, so in the case of performing the substrate processing of the reference example, the adhesion between the filling layer 172 and the surface of the pattern 161 is further improved. It is difficult to peel off the filling layer 172 from the first main surface W1.

Therefore, when the substrate processing of the present embodiment is performed, the adhesion between the surface of the pattern 161 provided with the concave portion 163 and the filling layer 172 can be reduced as compared with the substrate processing of the reference example. Thereby, after vaporizing the sacrificial layer 170, the filling layer 172 can be easily peeled from the first main surface W1. As a result, the time required for drying the substrate W can be shortened.

According to this embodiment, the vaporization process (heating vaporization process (step S37)) includes a gap formation process of forming a gap 174 between the surface of the pattern 161 and the filling layer 172 by vaporizing the sacrificial layer 170. Therefore, by vaporizing the sacrificial layer 170, the adhesion between the filling layer 172 and the pattern 161 can be further reduced. Therefore, the filling layer 172 can be more easily peeled from the first main surface W1.

According to this embodiment, the sacrificial layer forming process includes a sacrificial layer forming liquid supply process that supplies the sacrificial layer forming liquid 181 that reacts with the pattern 161 to form the sacrificial layer 170 on the first main surface W1. Therefore, by supplying the sacrificial layer forming liquid 181 to the first main surface W1, the sacrificial layer forming liquid 181 can enter each corner of the concave portion 163. Therefore, the sacrificial layer 170 imitating the surface of the pattern 161 can be surely formed.

According to the present embodiment, after the sacrificial layer 170 is formed and before the filling layer formation process is performed, the amphiphilic organic solvent 180 as the removal liquid is supplied to the first main surface W1 (removal liquid supply process (step S33)) . Therefore, the sacrificial layer forming liquid 181 that does not contribute to the formation of the sacrificial layer 170 can be removed from the first main surface W1 before the filling layer 172 is formed. Therefore, the influence of the sacrificial layer forming liquid 181 on the formation of the filling layer 172 can be reduced.

According to the present embodiment, the filling process of filling the filling layer forming liquid 182 into the concave portion 163 (filling layer forming liquid supply process (step S34)) and the filling layer on the first main surface W1 are performed by the liquid processing unit M In the curing process in which the forming liquid 182 is cured (heat curing process (step S37)), the filling layer 172 is formed on the first main surface W1 (filling layer forming process).

Therefore, by supplying the filling layer forming liquid 182 to the first main surface W1, the filling layer forming liquid 182 can enter each corner of the concave portion 163. Thereby, the liquid component (especially the amphiphilic organic solvent 180) remaining in the concave portion 163 can be replaced with the filling layer forming liquid 182. After the filling layer forming liquid 182 is cured (hardened) in this state to form the filling layer 172, the filling layer 172 is peeled off, whereby the substrate W can be dried well. In this embodiment, the second moving nozzle 13 and the first heater 61 constitute a filling layer forming unit.

According to the present embodiment, after the concave portion 163 is filled with the filling layer forming liquid in the filling layer forming process and before the curing process is performed, the spin-out process is performed (step S35). Therefore, the amount of the filling layer forming liquid 182 on the first main surface W1 decreases. Therefore, the time required for the solidification of the filling layer forming liquid 182 can be shortened.

According to this embodiment, the solidification temperature (hardening temperature) of the filling layer forming liquid 182 is lower than the vaporization temperature of the sacrificial layer 170. Therefore, it is possible to prevent the sacrificial layer 170 from being vaporized before the filling layer forming liquid 182 is cured. In addition, after the filling layer forming liquid 182 is cured by heating, the sacrificial layer 170 is vaporized. Therefore, when the heating of the sacrificial layer 170 starts, the sacrificial layer 170 has been sacrificed by heating to achieve the solidification of the filling layer forming liquid 182. Layer 170 is heated. Therefore, the time required for the heating for the vaporization of the sacrificial layer 170 can be shortened.

In addition, in the present embodiment, the organic solvent 180 (removal liquid) is compatible (mixed) with both the filling layer forming liquid 182 and the sacrificial layer forming liquid 181. Therefore, even when the filling layer forming liquid 182 and the sacrificial layer forming liquid 181 are not mixed, the organic solvent 180 can be supplied to the first main surface W1 of the substrate W to replace the sacrificial layer forming liquid on the substrate W with the organic solvent 180 181, after that, the filling layer forming liquid 182 is supplied to the first main surface W1 of the substrate W and the organic solvent 180 on the substrate W is replaced with the filling layer forming liquid 182, whereby the concave portion 163 can be filled with the filling layer forming liquid 182. Therefore, the degree of freedom of selection of the sacrificial layer forming liquid 181 and the filling layer forming liquid 182 is improved.

The present invention is not limited to the embodiments described above, and can be implemented in other forms.

In this embodiment, the turning unit 6 is used as the peeling unit. However, members other than the reversing unit 6 may be used as the peeling unit. For example, as shown in FIG. 12, instead of the reversing unit 6, a winding unit 90 that winds the filling layer 172 and peels the filling layer 172 from the first main surface W1 of the substrate W may be provided. The winding unit 90 includes, for example, a roller 91 that rolls on the first main surface W1 of the substrate W, and a roller moving unit 92 that moves the roller 91 in a direction along the first main surface W1 of the substrate W. In addition, as shown in FIG. 13, instead of the reversing unit 6, an adsorption unit 95 that peels the filler layer 172 from the first main surface W1 by adsorbing the filler layer 172 may be provided. The suction unit 95 includes: a suction nozzle 96 which abuts on the filling layer 172; and a decompression unit 97 which depressurizes the inside of the suction nozzle 96 and causes the filling layer 172 to be sucked on the suction nozzle 96. Furthermore, the size of the suction surface at the front end of the suction nozzle 96 may be substantially the same as the size of the upper surface of the filling layer 172.

In addition, the removal liquid does not have to be an amphiphilic organic solvent. As the so-called amphiphilic organic solvent, a liquid compatible with each of the sacrificial layer forming liquid and the filling layer forming liquid may be used as the removal liquid. In this case, the second moving nozzle 13 may be configured to supply a liquid different from the sacrificial layer forming liquid, the filling layer forming liquid, and the amphiphilic organic solvent as the removal liquid. Moreover, in this case, the amphiphilic organic solvent only needs to be compatible with each of the rinse liquid and the sacrificial layer forming liquid, and does not need to be compatible with the filling layer forming liquid.

In addition, in a case where the filling layer forming liquid contains a photocurable substance different from the present embodiment, instead of the first heating unit D1, a light irradiation unit that irradiates light to the first main surface W1 of the substrate W is provided in each processing tower 2 .

In this embodiment, the first heating unit D1 for forming the filling layer and the second heating unit D2 for vaporizing the sacrificial layer are separately provided. However, unlike the present embodiment, the processing tower 2 may replace the first heating unit D1 and the second heating unit D2, and include the substrate W being at least the curing temperature of the filling layer forming liquid and the vaporization temperature of the sacrificial layer. A single heating unit that changes in 2 stages.

The embodiments of the present invention have been described in detail, but these are only specific examples to clarify the technical content of the present invention, and the present invention should not be limited to these specific examples for explanation. The spirit and scope of the present invention are only The scope of the attached patent application is limited.

This application corresponds to Japanese Patent Application No. 2018-075587 filed with the Japanese Patent Office on April 10, 2018. The entire contents of this application are incorporated herein by reference.

1‧‧‧Substrate processing device 2‧‧‧treatment tower 3‧‧‧Controller 3A‧‧‧ processor 3B‧‧‧Memory 5‧‧‧Transport path 6‧‧‧Flip unit 10‧‧‧rotating chuck 11‧‧‧Handle 12‧‧‧ First mobile nozzle 13‧‧‧ 2nd moving nozzle 14‧‧‧First fixed nozzle 15‧‧‧Second fixed nozzle 16‧‧‧Shield 16A‧‧‧First shield 16B‧‧‧2nd shield 17‧‧‧Cup 17A‧‧‧1st Cup 17B‧‧‧Second Cup 21‧‧‧Rotating base 21A‧‧‧Circular Board Department 21B‧‧‧Cylinder 22‧‧‧rotation axis 23‧‧‧rotating motor 24‧‧‧ attraction 25‧‧‧ attraction path 26‧‧‧ suction tube 27‧‧‧ Attraction Unit 28‧‧‧ Suction valve 30‧‧‧Side wall 31‧‧‧ Entrance 32‧‧‧Block 33‧‧‧Block opening and closing unit 36‧‧‧Shield lifting unit 37‧‧‧ No.1 nozzle moving unit 38‧‧‧ 2nd nozzle moving unit 40‧‧‧ liquid medicine piping 41‧‧‧Sacrificial layer forming liquid piping 42‧‧‧Filling layer forming liquid piping 43‧‧‧ Organic solvent piping 44‧‧‧Flushing liquid piping 45‧‧‧Cleaning liquid piping 50‧‧‧Medicine valve 51‧‧‧Sacrificial layer forming liquid valve 52‧‧‧Filling layer forming valve 53‧‧‧Organic solvent valve 54‧‧‧Flush valve 55‧‧‧Cleaning fluid valve 60‧‧‧First substrate holder 61‧‧‧First heater 62‧‧‧First jacking 63‧‧‧The first heater power unit 64‧‧‧First base 65‧‧‧The first movable cover 66‧‧‧Internal space 67‧‧‧ First cover drive unit 68‧‧‧The first jacking lifting unit 70‧‧‧ 2nd substrate holder 71‧‧‧ 2nd heater 72‧‧‧The second jack 73‧‧‧The second heater power unit 74‧‧‧The second base 75‧‧‧Second movable cover 76‧‧‧Internal space 77‧‧‧ 2nd cover drive unit 78‧‧‧The second jacking lift unit 80‧‧‧Clamping member 80a‧‧‧Abutment Department 80b‧‧‧Shaft 81‧‧‧Clamping member rotating unit 82‧‧‧Clamping member moving unit 83‧‧‧bearing 84‧‧‧Support component 90‧‧‧coiling unit 91‧‧‧roll 92‧‧‧Roll moving unit 95‧‧‧Adsorption unit 96‧‧‧Adsorption nozzle 97‧‧‧Decompression unit 161‧‧‧pattern 162‧‧‧Structure 163‧‧‧recess 170‧‧‧Sacrifice 171‧‧‧Liquid film 172‧‧‧filling layer 172a‧‧‧Link 172b‧‧‧ Entry Department 174‧‧‧ gap 180‧‧‧ organic solvent 181‧‧‧Sacrificial layer forming fluid 182‧‧‧fill layer forming fluid A1‧‧‧Rotation axis A2‧‧‧Rotating central axis C‧‧‧Vehicle CR‧‧‧Transfer robot D1‧‧‧The first heating unit D2‧‧‧The second heating unit IR‧‧‧Transfer robot L1‧‧‧Width L2‧‧‧Interval LP‧‧‧Loading port M‧‧‧Liquid handling unit R1‧‧‧ chamber R2‧‧‧chamber R3‧‧‧chamber S1‧‧‧Step S2‧‧‧Step S3‧‧‧Step S31‧‧‧Step S32‧‧‧Step S33‧‧‧Step S34‧‧‧Step S35‧‧‧Step S36‧‧‧Step S37‧‧‧Step S38‧‧‧Step T‧‧‧Altitude W‧‧‧Substrate W1‧‧‧ 1st main face W2‧‧‧ 2nd main face X‧‧‧Extend direction

FIG. 1A is a schematic plan view for explaining the structure of a substrate processing apparatus according to an embodiment of the present invention. FIG. 1B is a schematic elevation view for explaining the structure of the substrate processing apparatus. 2 is a schematic cross-sectional view for explaining an example of the structure of a pattern-forming surface of a substrate processed by the substrate processing apparatus. 3 is a schematic cross-sectional view for explaining a configuration example of a liquid processing unit included in the substrate processing apparatus. 4 is a schematic cross-sectional view for explaining a configuration example of a first heating unit included in the substrate processing apparatus. 5 is a schematic cross-sectional view for explaining a configuration example of a second heating unit included in the substrate processing apparatus. FIG. 6 is a schematic plan view for explaining a configuration example of an inversion unit included in the substrate processing apparatus. 7 is a block diagram for explaining the electrical structure of the main part of the substrate processing apparatus. 8 is a flowchart for explaining an example of substrate processing performed by the above substrate processing apparatus. FIG. 9 is a flowchart for explaining an example of the drying process of the above substrate process. FIG. 10A is a schematic cross-sectional view for explaining an example of the drying process. FIG. 10B is a schematic cross-sectional view for explaining an example of the drying process. 10C is a schematic cross-sectional view for explaining an example of the above-mentioned drying process. FIG. 10D is a schematic cross-sectional view for explaining an example of the drying process. FIG. 10E is a schematic cross-sectional view for explaining an example of the drying process. 10F is a schematic cross-sectional view for explaining an example of the above-mentioned drying process. 10G is a schematic cross-sectional view for explaining an example of the above-mentioned drying process. FIG. 10H is a schematic cross-sectional view for explaining an example of the drying process. 11A is a schematic cross-sectional view for explaining the change in the structure of the pattern forming surface of the substrate in one example of the above-mentioned drying process. 11B is a schematic cross-sectional view for explaining the change in the structure of the pattern-forming surface of the substrate in one example of the above-mentioned drying process. FIG. 11C is a schematic cross-sectional view for explaining the change in the structure of the pattern forming surface of the substrate in one example of the above-mentioned drying process. 11D is a schematic cross-sectional view for explaining the change in the structure of the pattern forming surface of the substrate in one example of the above-mentioned drying process. 11E is a schematic cross-sectional view for explaining the change in the structure of the pattern-forming surface of the substrate in one example of the above-mentioned drying process. 11F is a schematic cross-sectional view for explaining the change in the structure of the pattern-forming surface of the substrate in one example of the above-mentioned drying process. 11G is a schematic cross-sectional view for explaining the change in the structure of the pattern forming surface of the substrate in one example of the above-mentioned drying process. 11H is a schematic cross-sectional view for explaining the change in the structure of the pattern-forming surface of the substrate in one example of the above-mentioned drying process. 12 is a schematic diagram for explaining the structure of a peeling unit included in a substrate processing apparatus according to a modified example. 13 is a schematic diagram for explaining the structure of a peeling unit included in a substrate processing apparatus according to another modification.

161‧‧‧pattern

162‧‧‧Structure

163‧‧‧recess

170‧‧‧Sacrifice

171‧‧‧Liquid film

182‧‧‧fill layer forming fluid

W‧‧‧Substrate

W1‧‧‧ 1st main face

Claims (18)

A substrate processing method which dries a substrate having a pattern forming surface, the pattern forming surface is formed with a pattern having concave portions, and the substrate processing method includes: The sacrificial layer forming process is to form a sacrificial layer on the pattern-forming surface that imitates the surface of the pattern; A filling layer forming process, which is to form a filling layer filling the concave portion of the pattern on the pattern-forming surface in the state where the sacrificial layer is formed; A gasification process, which is to vaporize the sacrificial layer in the state where the filling layer is formed; and The peeling process is to peel off the filling layer from the patterned surface after vaporizing the sacrificial layer. The substrate processing method according to claim 1, wherein the vaporization process includes a gap formation process that forms a gap between the surface of the pattern and the filling layer by vaporizing the sacrificial layer. The substrate processing method according to claim 1 or 2, wherein the sacrificial layer forming process includes a sacrificial layer forming liquid supply process, and the sacrificial layer forming liquid supply process supplies the pattern forming surface with a reaction with the pattern to form the sacrificial layer Sacrificial layer forming fluid. The substrate processing method according to claim 3, which further includes a removal liquid supply process which removes the sacrificial layer forming liquid from the pattern forming surface after forming the sacrificial layer and before performing the filling layer forming process The removal liquid is supplied to the pattern forming surface. The substrate processing method according to claim 1 or 2, wherein the vaporization process includes a heating vaporization process that heats the sacrificial layer via the substrate, thereby vaporizing the sacrificial layer. The substrate processing method according to claim 1 or 2, wherein the filling layer forming process includes a filling process in which the filling layer forming liquid is filled in the concave portion by supplying the filling layer forming liquid to the pattern forming surface; and curing The process of curing the filling layer forming liquid on the pattern forming surface to form the filling layer. The substrate processing method according to claim 6, which further includes a substrate holding process for holding the above substrate horizontally, The formation process of the filling layer includes a rotation exclusion process, which is to make the substrate held horizontally around the rotation axis along the vertical direction after the concave portion is filled with the filling layer forming liquid and before the curing process is performed By rotating, while maintaining the state where the concave portion is filled with the filling layer forming liquid, a portion of the filling layer forming liquid is excluded from the pattern forming surface. The substrate processing method according to claim 6, wherein the curing process includes a heating and curing process that heats the filling layer forming liquid on the pattern forming surface via the substrate, thereby causing the above on the pattern forming surface The filling layer forming liquid is solidified. The substrate processing method according to claim 1 or 2, wherein the gasification process includes a heating gasification process, which heats the sacrificial layer via the substrate, thereby vaporizing the sacrificial layer, The filling layer forming process includes: a filling process which supplies a filling layer forming liquid with a curing temperature lower than the vaporization temperature of the sacrificial layer to the pattern forming surface, thereby filling the filling layer forming liquid into the concave portion; and The heat curing process is to heat the filling layer forming liquid on the pattern forming surface via the substrate, thereby curing the filling layer forming liquid on the pattern forming surface to form the filling layer. A substrate processing device which dries a substrate having a pattern forming surface, the pattern forming surface is formed with a pattern having concave portions, and the substrate processing device includes: A sacrificial layer forming unit, which forms a sacrificial layer imitating the surface of the pattern on the pattern forming surface; A filling layer forming unit which forms a filling layer filling the concave portion of the pattern on the pattern forming surface on which the sacrificial layer is formed; A vaporization unit that vaporizes the sacrificial layer on the substrate on which the filling layer is formed; and The peeling unit peels the filling layer from the patterned surface of the substrate on which the sacrificial layer has been vaporized. The substrate processing apparatus according to claim 10, wherein the vaporizing unit forms a gap between the surface of the pattern and the filling layer by vaporizing the sacrificial layer. The substrate processing apparatus according to claim 10 or 11, wherein the sacrificial layer forming unit has a sacrificial layer forming liquid supply unit that supplies the sacrificial layer forming liquid to the pattern forming surface. The substrate processing apparatus according to claim 12, which further includes a removal liquid supply unit that supplies the removal liquid for removing the sacrificial layer forming liquid from the pattern forming surface to the pattern forming surface. The substrate processing apparatus according to claim 10 or 11, wherein the vaporization unit has a sacrificial layer heating unit, and the sacrificial layer heating unit heats the sacrificial layer via the substrate. The substrate processing apparatus according to claim 10 or 11, wherein the filling layer forming unit includes: a filling layer forming liquid supply unit that supplies a filling layer forming liquid to the pattern forming surface to fill the concave portion with the filling layer forming liquid; and A curing unit that cures the filling layer forming liquid on the pattern forming surface. The substrate processing apparatus of claim 15 further includes: A substrate holding unit that holds the above substrate horizontally; and A substrate rotation unit that rotates the above-mentioned substrate held horizontally around a rotation axis along the vertical direction; The substrate rotating unit rotates the substrate filled with the filling layer forming liquid in the concave portion, thereby excluding a portion of the filling layer forming liquid from the pattern forming surface while maintaining the state in which the concave portion is filled with the filling layer forming liquid. The substrate processing apparatus according to claim 15, wherein the curing unit has a filling layer forming liquid heating unit that heats the filling layer forming liquid via the substrate. The substrate processing apparatus according to claim 10 or 11, wherein the vaporization unit has a sacrificial layer heating unit that heats the sacrificial layer via the substrate, The filling layer forming unit includes a filling layer forming liquid supply unit that supplies a filling layer forming liquid whose curing temperature is lower than the vaporization temperature of the sacrificial layer to the pattern forming surface; and a filling layer forming liquid heating unit that interposes The substrate heats the filling layer forming liquid.

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