TWI819570B - Coating method and coating device - Google Patents
Coating method and coating device Download PDFInfo
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- TWI819570B TWI819570B TW111114272A TW111114272A TWI819570B TW I819570 B TWI819570 B TW I819570B TW 111114272 A TW111114272 A TW 111114272A TW 111114272 A TW111114272 A TW 111114272A TW I819570 B TWI819570 B TW I819570B
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- 238000000576 coating method Methods 0.000 title claims abstract description 172
- 239000011248 coating agent Substances 0.000 title claims abstract description 152
- 239000000758 substrate Substances 0.000 claims abstract description 378
- 239000007788 liquid Substances 0.000 claims abstract description 274
- 238000001035 drying Methods 0.000 claims abstract description 58
- 230000002093 peripheral effect Effects 0.000 claims description 57
- 238000012545 processing Methods 0.000 claims description 56
- 238000004140 cleaning Methods 0.000 claims description 39
- 238000000034 method Methods 0.000 claims description 15
- 230000007480 spreading Effects 0.000 claims description 3
- 239000002904 solvent Substances 0.000 description 27
- 238000001179 sorption measurement Methods 0.000 description 13
- 230000000052 comparative effect Effects 0.000 description 12
- 239000012530 fluid Substances 0.000 description 12
- 101100441413 Caenorhabditis elegans cup-15 gene Proteins 0.000 description 10
- 238000010586 diagram Methods 0.000 description 8
- 230000007547 defect Effects 0.000 description 5
- 239000007787 solid Substances 0.000 description 5
- 238000011109 contamination Methods 0.000 description 4
- 238000005401 electroluminescence Methods 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 238000003672 processing method Methods 0.000 description 4
- 230000000717 retained effect Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 3
- 239000007921 spray Substances 0.000 description 3
- 239000006117 anti-reflective coating Substances 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000012790 confirmation Methods 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000009736 wetting Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000013585 weight reducing agent Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/002—Processes for applying liquids or other fluent materials the substrate being rotated
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C11/00—Component parts, details or accessories not specifically provided for in groups B05C1/00 - B05C9/00
- B05C11/02—Apparatus for spreading or distributing liquids or other fluent materials already applied to a surface ; Controlling means therefor; Control of the thickness of a coating by spreading or distributing liquids or other fluent materials already applied to the coated surface
- B05C11/08—Spreading liquid or other fluent material by manipulating the work, e.g. tilting
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C5/00—Apparatus in which liquid or other fluent material is projected, poured or allowed to flow on to the surface of the work
- B05C5/02—Apparatus in which liquid or other fluent material is projected, poured or allowed to flow on to the surface of the work the liquid or other fluent material being discharged through an outlet orifice by pressure, e.g. from an outlet device in contact or almost in contact, with the work
- B05C5/0208—Apparatus in which liquid or other fluent material is projected, poured or allowed to flow on to the surface of the work the liquid or other fluent material being discharged through an outlet orifice by pressure, e.g. from an outlet device in contact or almost in contact, with the work for applying liquid or other fluent material to separate articles
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
- G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
- Coating Apparatus (AREA)
- Non-Metallic Protective Coatings For Printed Circuits (AREA)
Abstract
本發明之基板具有上表面及下表面，於上表面形成有圓環狀之凸部。基板以水平姿勢保持。對該基板之上表面供給塗佈液。於塗佈液之供給中或供給後，藉由使基板繞鉛直軸旋轉而將塗佈液擴展至上表面整體。之後，藉由使基板繞鉛直軸旋轉而使基板乾燥。於使基板乾燥時，於第1時點至第1時點之後之第2時點之間，使基板以第1轉速旋轉。又，於第2時點至第2時點之後之第3時點之間，使基板以高於第1轉速之第2轉速旋轉。The substrate of the present invention has an upper surface and a lower surface, and an annular convex portion is formed on the upper surface. The base plate is held in a horizontal position. The coating liquid is supplied to the upper surface of the substrate. During or after the supply of the coating liquid, the substrate is rotated about the vertical axis to spread the coating liquid to the entire upper surface. Thereafter, the substrate is dried by rotating the substrate about the vertical axis. When drying the substrate, the substrate is rotated at the first rotation speed between the first time point and the second time point after the first time point. Furthermore, between the second time point and the third time point after the second time point, the substrate is rotated at a second rotation speed higher than the first rotation speed.
Description
本發明係關於一種於基板形成塗佈膜之塗佈處理方法及塗佈處理裝置。 The present invention relates to a coating processing method and a coating processing device for forming a coating film on a substrate.
為對半導體基板、液晶顯示裝置或有機EL(Electro Luminescence：電致發光)顯示裝置等FPD(Flat Panel Display：平板顯示器)用基板、光碟用基板、磁碟用基板、光磁碟用基板、光罩用基板、陶瓷基板或太陽能電池用基板等基板進行各種處理，而使用基板處理裝置。 For FPD (Flat Panel Display) substrates such as semiconductor substrates, liquid crystal display devices or organic EL (Electro Luminescence) display devices, substrates for optical discs, substrates for magnetic discs, substrates for opto-magnetic discs, optical discs, etc. A substrate processing apparatus is used to perform various processes on substrates such as cover substrates, ceramic substrates, and solar cell substrates.
作為基板處理裝置之一例，有於基板之上表面形成抗蝕劑膜或防反射膜等塗佈膜之塗佈處理裝置。於塗佈處理裝置中，藉由旋轉卡盤將例如一張基板以水平姿勢保持。又，藉由旋轉卡盤保持之基板旋轉。對旋轉之基板之上表面，供給與應形成之塗佈膜之種類對應之塗佈液。供給至基板上之塗佈液由離心力擴展至基板之上表面整體。藉由基板上之塗佈液乾燥而形成塗佈膜。 An example of a substrate processing apparatus is a coating processing apparatus that forms a coating film such as a resist film or an antireflection film on the upper surface of a substrate. In the coating processing device, for example, a single substrate is held in a horizontal position by a rotating chuck. Furthermore, the substrate held by the spin chuck rotates. A coating liquid corresponding to the type of coating film to be formed is supplied to the upper surface of the rotating substrate. The coating liquid supplied to the substrate spreads to the entire upper surface of the substrate due to centrifugal force. A coating film is formed by drying the coating liquid on the substrate.
為減少塗佈處理所需要之成本，而期望減少每一張基板所使用之塗佈液之量。又，即使於每一張基板所使用之塗佈液之量比較少之情形時，亦期望於基板之一面均一地形成塗佈膜。考慮該等點，於例如日本專利特開2010-212658號公報所記載之抗蝕劑塗佈方法中，於開始對基板供給抗蝕劑液後，基板之轉速隨著時間之經過變更為複數個級別。於基板上塗抹抗蝕劑液後，為使抗蝕劑液乾燥，基板於特定期間以一定之轉速旋轉。 In order to reduce the cost of coating processing, it is desired to reduce the amount of coating liquid used for each substrate. Furthermore, even when the amount of coating liquid used per substrate is relatively small, it is desirable to form a coating film uniformly on one surface of the substrate. Taking these points into consideration, for example, in the resist coating method described in Japanese Patent Application Laid-Open No. 2010-212658, after the supply of the resist liquid to the substrate is started, the rotation speed of the substrate is changed to a plurality of times as time passes. level. After the resist liquid is applied to the substrate, in order to dry the resist liquid, the substrate is rotated at a certain rotation speed for a specific period of time.
近年來，為實現半導體器件之小型化及輕量化，而推進基板之薄型化。難以處理明顯薄型化之基板。對此，已知有於具有大致圓形狀之基板之一面，具有沿該基板之外周端部之圓環狀之凸部之基板(參照例如日本專利特開2012-146889號公報)。該基板將圓環狀之凸部作為補強部發揮功能，藉此處理性提高。 In recent years, in order to realize miniaturization and weight reduction of semiconductor devices, thinning of substrates has been promoted. It is difficult to handle significantly thinner substrates. In this regard, there is known a substrate having an annular convex portion along the outer peripheral end portion of a substantially circular substrate on one surface thereof (see, for example, Japanese Patent Application Laid-Open No. 2012-146889). In this substrate, the annular convex portion functions as a reinforcing portion, thereby improving the rationality.
上述基板之一面中，於圓環狀之凸部之內側形成落差。因此，於基板之一面上形成塗佈膜之塗佈處理中，若於圓環狀之凸部之內周端部殘留塗佈液，則有因殘留之塗佈液導致產生基板之處理不良之可能性。或，有因殘留之塗佈液導致產生粒子之可能性。 On one surface of the above-mentioned substrate, a drop is formed inside the annular convex portion. Therefore, during the coating process of forming a coating film on one surface of the substrate, if the coating liquid remains on the inner peripheral end of the annular convex portion, the residual coating liquid may cause processing defects of the substrate. possibility. Or, there is a possibility that particles may be generated due to residual coating liquid.
本發明之目的在於提供一種可防止起因於不需要之塗佈液殘留於基板上產生之基板之處理不良及基板之污染之塗佈處理方法及塗佈處理裝置。 An object of the present invention is to provide a coating processing method and a coating processing apparatus that can prevent substrate processing defects and substrate contamination caused by unnecessary coating liquid remaining on the substrate.
(1)依照本發明之一態樣之塗佈處理方法係於至少一部分具有圓形狀之外周部之基板形成塗佈膜之塗佈處理方法，且基板具有相互面向反方向之第1面及第2面，於第1面，形成向與該第1面正交之方向突出且沿外周部延伸之圓環狀之凸部，塗佈處理方法包含以下步驟：以第1面面向上方之方式以水平姿勢保持基板；對第1面供給塗佈液，藉由於塗佈液之供給中或供給後使以水平姿勢保持之基板繞鉛直軸旋轉而將塗佈液擴展至包含上述凸部之表面之該第1面整體；及於擴展塗佈液之步驟之後，藉由使以水平姿勢保持之基板繞鉛直軸旋轉而使基板乾燥；且使基板乾燥之步驟包含：於第1時點至第1時點之後之第2時點之間，使基板以第1轉速旋轉；及於第2時點至第2時點之後之第3時點之間，使基板以高於第1轉速之第2轉速旋轉。 (1) A coating treatment method according to an aspect of the present invention is a coating treatment method for forming a coating film on at least a part of a substrate having a circular outer peripheral portion, and the substrate has a first surface and a second surface facing in opposite directions to each other. On the second surface, on the first surface, an annular convex portion is formed that protrudes in a direction orthogonal to the first surface and extends along the outer circumference. The coating treatment method includes the following steps: with the first surface facing upward, The substrate is held in a horizontal posture; the coating liquid is supplied to the first surface, and the substrate held in the horizontal posture is rotated around the vertical axis during or after the supply of the coating liquid, thereby spreading the coating liquid to the surface including the above-mentioned convex portions. The entire first surface; and after the step of spreading the coating liquid, drying the substrate by rotating the substrate held in a horizontal position around the vertical axis; and the step of drying the substrate includes: from the first time point to the first time point Between the second time point thereafter, the substrate is rotated at the first rotational speed; and between the second time point and the third time point after the second time point, the substrate is rotated at a second rotational speed higher than the first rotational speed.
於該塗佈處理方法中，基板以第1面面向上方之方式以水平姿勢保持。又，對第1面供給塗佈液。再者，基板於塗佈液之供給中或供給後旋轉，使塗佈液擴展至第1面整體。於塗佈液擴展至第1面整體之後，為使基板乾燥，基板自第1時點至第2時點以第1轉速旋轉。藉此，位於基板之中央部分且具有流動性之塗佈液向基板之外周部移動。因此，基板之第1面之中央部分乾燥。 In this coating processing method, the substrate is held in a horizontal posture with the first surface facing upward. Furthermore, the coating liquid is supplied to the first surface. Furthermore, the substrate is rotated during or after the supply of the coating liquid, so that the coating liquid spreads to the entire first surface. After the coating liquid spreads to the entire first surface, in order to dry the substrate, the substrate is rotated at the first rotation speed from the first time point to the second time point. Thereby, the fluid coating liquid located in the central part of the substrate moves toward the outer peripheral part of the substrate. Therefore, the central portion of the first surface of the substrate is dried.
接著，基板自第2時點至第3時點以高於第1轉速之第2轉速旋轉。於該情形時，對在基板之外周部及其附近流動之塗佈液作用更大之離心力。又，於包圍基板之空間，產生更大之氣流。藉此，於第1面上自基板之中心向外周部流動之塗佈液之大部分自圓環狀之凸部之內側區域向基板之外側飛散。換言之，於第1面上導向圓環狀之凸部之內緣之不需要之塗佈液 甩開至基板之外側。 Then, the substrate rotates at a second rotational speed higher than the first rotational speed from the second time point to the third time point. In this case, a greater centrifugal force acts on the coating liquid flowing in and around the outer peripheral portion of the substrate. In addition, greater airflow is generated in the space surrounding the substrate. Thereby, most of the coating liquid flowing from the center of the substrate to the outer peripheral portion on the first surface is scattered from the inner region of the annular convex portion to the outside of the substrate. In other words, the unnecessary coating liquid is guided to the inner edge of the annular convex portion on the first surface Swing it out to the outside of the base plate.
其結果，可防止起因於塗佈處理時不需要之塗佈液殘留於基板上而產生基板之處理不良及基板之污染。 As a result, it is possible to prevent substrate processing defects and substrate contamination caused by unnecessary coating liquid remaining on the substrate during the coating process.
(2)塗佈處理方法亦可進而包含於使基板乾燥之步驟之後，使基板以低於第1轉速之第3轉速旋轉，且對第2面供給清洗液之步驟。 (2) The coating treatment method may further include, after the step of drying the substrate, a step of rotating the substrate at a third rotation speed lower than the first rotation speed and supplying a cleaning liquid to the second surface.
於該情形時，與對以第1轉速旋轉之基板供給清洗液之情形相比，可減少自基板飛散之清洗液之量。藉此，可防止由於對第1面附著清洗液而產生處理不良。 In this case, compared with the case where the cleaning liquid is supplied to the substrate rotating at the first rotation speed, the amount of cleaning liquid scattered from the substrate can be reduced. This can prevent processing failures caused by adhesion of cleaning fluid to the first surface.
(3)第2時點亦可規定為擴展於第1面上之塗佈液中第1面之中央區域所存在之部分為乾燥且包圍第1面之中央區域之區域上所存在之部分為流動之狀態之期間內。 (3) The second time point can also be defined as that the portion of the coating liquid that spreads on the first surface that exists in the central area of the first surface is dry and the portion that exists in the area surrounding the central area of the first surface is flowing. within the period of the status.
於該情形時，於使基板乾燥時，自第2時點至第3時點包圍第1面之中央區域之區域所存在之塗佈液被順滑甩開。 In this case, when the substrate is dried, the coating liquid present in the area surrounding the central area of the first surface from the second time point to the third time point is smoothly shaken off.
(4)第2時點亦可規定為經過第1時點後供給至第1面之塗佈液之表面所產生之干涉條紋消失之前之時點。 (4) The second time point may also be defined as a time point after the first time point and before the interference fringes generated on the surface of the coating liquid supplied to the first surface disappear.
於該情形時，於干涉條紋消失之前基板開始第2轉速之旋轉。藉此， 存在於基板之外周部及其附近且具有流動性之塗佈液被順滑甩開。 In this case, the substrate starts rotating at the second speed before the interference fringes disappear. By this, The fluid coating liquid present on and near the outer peripheral portion of the substrate is smoothly shaken off.
(5)第2轉速亦可高於第1轉速之2倍之轉速。 (5) The second rotational speed can also be higher than twice the first rotational speed.
於該情形時，對第1面上導向圓環狀之凸部之內緣之不需要之塗佈液作用更大之離心力。又，於包圍基板之空間產生更大之氣流。藉此，圓環狀之凸部之內側之不需要之塗佈液被更順滑地甩開至基板之外側。 In this case, a greater centrifugal force acts on the unnecessary coating liquid at the inner edge of the guide annular convex portion on the first surface. In addition, greater airflow is generated in the space surrounding the substrate. Thereby, the unnecessary coating liquid inside the annular convex portion is more smoothly thrown away to the outside of the substrate.
(6)依照本發明之另一態樣之塗佈處理裝置係於至少一部分具有圓形狀之外周部之基板形成塗佈膜之塗佈處理裝置，且基板具有相互面向反方向之第1面及第2面，於第1面，形成向與該第1面正交之方向突出且沿外周部延伸之圓環狀之凸部，塗佈處理裝置具備：旋轉保持部，其以第1面面向上方之方式以水平姿勢保持基板且使其繞鉛直軸旋轉；塗佈液供給部，其對第1面供給塗佈液；及控制部，其以對第1面供給塗佈液之方式控制塗佈液供給部，以藉由塗佈液之供給中或供給後以水平姿勢保持之基板繞鉛直軸旋轉，而使塗佈液擴展至包含上述凸部之表面之該第1面整體之方式控制旋轉保持部；且控制部於塗佈液擴展至第1面整體之後，於第1時點至第1時點之後之第2時點之間，以水平姿勢保持之基板以第1轉速旋轉，於第2時點至第2時點之後之第3時點之間，以水平姿勢保持之基板以高於第1轉速之第2轉速旋轉，藉此基板乾燥，以此方式進一步控制旋轉保持部。 (6) A coating processing device according to another aspect of the present invention is a coating processing device that forms a coating film on at least a part of a substrate having a circular outer peripheral portion, and the substrates have first surfaces facing in opposite directions to each other, and The second surface is formed on the first surface with an annular convex portion protruding in a direction orthogonal to the first surface and extending along the outer circumference. The coating processing device is provided with a rotation holding portion facing the first surface. The upper method holds the substrate in a horizontal posture and rotates it around the vertical axis; a coating liquid supply part that supplies the coating liquid to the first surface; and a control part that controls the coating by supplying the coating liquid to the first surface. The distribution liquid supply unit is controlled in such a manner that the coating liquid is spread to the entire first surface including the surface of the convex portion by rotating the substrate held in a horizontal position around the vertical axis during or after the supply of the coating liquid. The rotation holding part; and the control part rotates the substrate held in a horizontal posture at the first rotation speed between the first time point and the second time point after the first time point after the coating liquid spreads to the entire first surface, and at the second time point Between the time point and the third time point after the second time point, the substrate held in the horizontal position is rotated at a second rotation speed higher than the first rotation speed, thereby drying the substrate, and in this way, the rotation holding portion is further controlled.
於該塗佈處理裝置中，基板以第1面面向上方之方式以水平姿勢保持。又，對第1面供給塗佈液。再者，基板於塗佈液之供給中或供給後旋 轉，使塗佈液擴展至第1面整體。於塗佈液擴展至第1面整體之後，為使基板乾燥，基板自第1時點至第2時點以第1轉速旋轉。藉此，位於基板之中央部分且具有流動性之塗佈液向基板之外周部移動。因此，基板之第1面之中央部分乾燥。 In this coating processing apparatus, the substrate is held in a horizontal posture with the first surface facing upward. Furthermore, the coating liquid is supplied to the first surface. Furthermore, the substrate is rotated during or after supplying the coating liquid. Turn to spread the coating liquid to the entire first side. After the coating liquid spreads to the entire first surface, in order to dry the substrate, the substrate is rotated at the first rotation speed from the first time point to the second time point. Thereby, the fluid coating liquid located in the central part of the substrate moves toward the outer peripheral part of the substrate. Therefore, the central portion of the first surface of the substrate is dried.
接著，基板自第2時點至第3時點以高於第1轉速之第2轉速旋轉。於該情形時，對在基板之外周部及其附近流動之塗佈液作用更大之離心力。又，於包圍基板之空間，產生更大之氣流。藉此，於第1面上自基板之中心向外周部流動之塗佈液之大部分自圓環狀之凸部之內側區域向基板之外側飛散。換言之，於第1面上導向圓環狀之凸部之內緣之不需要之塗佈液甩開至基板之外側。 Then, the substrate rotates at a second rotational speed higher than the first rotational speed from the second time point to the third time point. In this case, a greater centrifugal force acts on the coating liquid flowing in and around the outer peripheral portion of the substrate. In addition, greater airflow is generated in the space surrounding the substrate. Thereby, most of the coating liquid flowing from the center of the substrate to the outer peripheral portion on the first surface is scattered from the inner region of the annular convex portion to the outside of the substrate. In other words, the unnecessary coating liquid guided to the inner edge of the annular convex portion on the first surface is thrown away to the outside of the substrate.
其結果，可防止起因於塗佈處理時不需要之塗佈液殘留於基板上而產生基板之處理不良及基板之污染。 As a result, it is possible to prevent substrate processing defects and substrate contamination caused by unnecessary coating liquid remaining on the substrate during the coating process.
(7)塗佈處理裝置亦可進而具備對第2面供給清洗液之清洗液供給部，控制部於基板藉由以第2轉速旋轉而乾燥之後，以基板以低於第1轉速之第3轉速旋轉之方式進一步控制旋轉保持部，且以對以第3轉速旋轉之基板之第2面供給清洗液之方式進一步控制清洗液供給部。 (7) The coating processing device may further include a cleaning liquid supply unit that supplies cleaning liquid to the second surface. After the substrate is dried by rotating at the second rotation speed, the control unit rotates the substrate at a third rotation speed lower than the first rotation speed. The rotation holding part is further controlled in the manner of rotating at the third rotating speed, and the cleaning liquid supply part is further controlled in the manner of supplying the cleaning liquid to the second surface of the substrate rotating at the third rotating speed.
於該情形時，與對以第1轉速旋轉之基板供給清洗液之情形相比，可減少自基板飛散之清洗液之量。藉此，可防止由於對第1面附著清洗液而產生處理不良。 In this case, compared with the case where the cleaning liquid is supplied to the substrate rotating at the first rotation speed, the amount of cleaning liquid scattered from the substrate can be reduced. This can prevent processing failures caused by adhesion of cleaning fluid to the first surface.
(8)第2時點亦可規定為擴展於第1面上之塗佈液中第1面之中央區域所存在之部分為乾燥且包圍第1面之中央區域之區域上所存在之部分為流動之狀態之期間內。 (8) The second time point can also be defined as that the portion of the coating liquid that spreads on the first surface that exists in the central area of the first surface is dry and the portion that exists in the area surrounding the central area of the first surface is flowing. within the period of the status.
於該情形時，於使基板乾燥時，自第2時點至第3時點包圍第1面之中央區域之區域所存在之塗佈液被順滑甩開。 In this case, when the substrate is dried, the coating liquid present in the area surrounding the central area of the first surface from the second time point to the third time point is smoothly shaken off.
(9)第2時點亦可規定為經過第1時點後供給至第1面之塗佈液之表面所產生之干涉條紋消失之前之時點。 (9) The second time point may also be defined as a time point after the first time point and before the interference fringes generated on the surface of the coating liquid supplied to the first surface disappear.
於該情形時，於干涉條紋消失之前基板開始第2轉速之旋轉。藉此，存在於基板之外周部及其附近且具有流動性之塗佈液被順滑甩開。 In this case, the substrate starts rotating at the second speed before the interference fringes disappear. Thereby, the fluid coating liquid present on and near the outer peripheral portion of the substrate is smoothly thrown away.
(10)第2轉速亦可高於第1轉速之2倍之轉速。 (10) The second rotational speed can also be higher than twice the first rotational speed.
於該情形時，對第1面上導向圓環狀之凸部之內緣之不需要之塗佈液作用更大之離心力。又，於包圍基板之空間產生更大之氣流。藉此，圓環狀之凸部之內側之不需要之塗佈液被更順滑地甩開至基板之外側。 In this case, a greater centrifugal force acts on the unnecessary coating liquid at the inner edge of the guide annular convex portion on the first surface. In addition, greater airflow is generated in the space surrounding the substrate. Thereby, the unnecessary coating liquid inside the annular convex portion is more smoothly thrown away to the outside of the substrate.
1:塗佈處理裝置 1: Coating processing device
10:旋轉保持裝置 10: Rotation holding device
11:吸附保持部 11: Adsorption and holding part
11u:上表面 11u: Upper surface
12:旋轉軸 12:Rotation axis
13:旋轉驅動部 13: Rotary drive part
14:吸引裝置 14:Suction device
15:杯 15:Cup
15d:排出口 15d: Discharge outlet
15x:底部 15x: bottom
15y:外周壁部 15y: Peripheral wall
16:排液導管 16: Drainage catheter
17:下表面噴嘴 17: Lower surface nozzle
17b:液體噴出口 17b: Liquid ejection port
18:清洗液供給系統 18:Cleaning fluid supply system
20:液體供給裝置 20:Liquid supply device
21:抗蝕劑噴嘴 21:Resist nozzle
22:塗佈液供給系統 22: Coating liquid supply system
23:溶劑噴嘴 23:Solvent nozzle
24:溶劑供給系統 24:Solvent supply system
30:控制部 30:Control Department
h:吸引孔 h: suction hole
IA:內側區域 IA: medial area
L:直線 L: straight line
N:缺口 N: gap
p1:期間 p1:Period
p2:期間 p2:Period
R1:抗蝕劑液 R1: Resist liquid
R2:抗蝕劑膜 R2: Resist film
RP:邊緣部 RP: edge
S1:上表面 S1: upper surface
S2:下表面 S2: Lower surface
s1~s8:轉速 s1~s8: speed
SR:邊緣部 SR: edge
ST:落差 ST: gap
t1~t11:時點 t1~t11: time point
vp:吸氣路徑 vp: inhalation path
W:基板 W: substrate
W1:實施例基板 W1: Example substrate
W2:比較例基板 W2: Comparative example substrate
圖1係本發明之一實施形態之塗佈處理裝置之模式性剖視圖。 FIG. 1 is a schematic cross-sectional view of a coating processing apparatus according to an embodiment of the present invention.
圖2係圖1之塗佈處理裝置之模式性俯視圖。 FIG. 2 is a schematic plan view of the coating processing apparatus of FIG. 1 .
圖3係成為圖1之塗佈處理裝置之處理對象之基板之俯視圖。 FIG. 3 is a top view of a substrate to be processed by the coating processing apparatus of FIG. 1 .
圖4係圖3之基板之A-A線剖視圖。 FIG. 4 is a cross-sectional view of the substrate of FIG. 3 taken along line A-A.
圖5係顯示液膜乾燥步驟中於基板W之邊緣部與內側區域之邊界之落差滯留抗蝕劑液之例之圖。 FIG. 5 is a diagram showing an example in which the resist liquid is retained at the boundary between the edge portion and the inner region of the substrate W in the liquid film drying step.
圖6係顯示本發明之一實施形態之塗佈處理中之基板之轉速之控制例之圖。 FIG. 6 is a diagram showing an example of controlling the rotation speed of the substrate during the coating process according to one embodiment of the present invention.
圖7係顯示圖6之液膜乾燥步驟中存在於基板之邊緣部及其周邊部之抗蝕劑液或抗蝕劑膜之狀態之變化之圖。 FIG. 7 is a diagram showing changes in the state of the resist liquid or resist film existing at the edge portion and the peripheral portion of the substrate in the liquid film drying step of FIG. 6 .
圖8係顯示實施例基板及比較例基板之抗蝕劑膜之膜厚分佈之一部分之圖。 FIG. 8 is a diagram showing a part of the film thickness distribution of the resist film of the example substrate and the comparative example substrate.
以下，參照圖式就本發明之一實施形態之塗佈處理方法及塗佈處理裝置進行說明。於以下之說明中，基板係指液晶顯示裝置或有機EL(Electro Luminescence)顯示裝置等所使用之FPD(Flat Panel Display)用基板、半導體基板、光碟用基板、磁碟用基板、光磁碟用基板、光罩用基板、陶瓷基板或太陽能電池用基板等。又，於本實施形態中，基板之上表面為電路形成面(表面)，基板之下表面為與電路形成面成相反側之面(背面)。再者，於本實施形態中，基板於俯視下去除缺口之形成部分外具有圓形狀。稍後對基板之形狀之細節進行敘述。 Hereinafter, a coating processing method and a coating processing apparatus according to an embodiment of the present invention will be described with reference to the drawings. In the following description, substrates refer to FPD (Flat Panel Display) substrates, semiconductor substrates, optical disk substrates, magnetic disk substrates, and optical disk substrates used in liquid crystal display devices or organic EL (Electro Luminescence) display devices. Substrates, photomask substrates, ceramic substrates, solar cell substrates, etc. Furthermore, in this embodiment, the upper surface of the substrate is the circuit-formed surface (front surface), and the lower surface of the substrate is the surface opposite to the circuit-formed surface (rear surface). Furthermore, in this embodiment, the substrate has a circular shape in plan view except for the portion where the notch is formed. Details of the shape of the substrate will be described later.
[1]塗佈處理裝置之整體構成 [1] Overall structure of coating processing device
圖1係本發明之一實施形態之塗佈處理裝置之模式性剖視圖，圖2係 圖1之塗佈處理裝置1之模式性俯視圖。於圖2中，省略圖1之塗佈處理裝置1之複數個構成要件中之一部分構成要件之圖示。又，以一點劃線顯示圖1之基板W。 Fig. 1 is a schematic cross-sectional view of a coating processing device according to an embodiment of the present invention, and Fig. 2 is a FIG. 1 is a schematic plan view of the coating processing apparatus 1. In FIG. 2 , illustration of some of the plurality of components of the coating processing apparatus 1 of FIG. 1 is omitted. In addition, the substrate W in FIG. 1 is shown with a one-dot chain line.
如圖1所示，本實施形態之塗佈處理裝置1主要具備旋轉保持裝置10、液體供給裝置20及控制部30。旋轉保持裝置10構成為可吸附保持基板W之下表面中央部且使其旋轉。 As shown in FIG. 1 , the coating processing apparatus 1 of this embodiment mainly includes a rotation holding device 10 , a liquid supply device 20 , and a control unit 30 . The rotation holding device 10 is configured to adsorb and hold the center portion of the lower surface of the substrate W and rotate it.
液體供給裝置20包含抗蝕劑噴嘴21、塗佈液供給系統22、溶劑噴嘴23及溶劑供給系統24。塗佈液供給系統22對抗蝕劑噴嘴21供給抗蝕劑液。抗蝕劑噴嘴21將供給之抗蝕劑液噴出至由旋轉保持裝置10吸附保持並旋轉之基板W之上表面。溶劑供給系統24對溶劑噴嘴23供給溶劑。溶劑噴嘴23將供給之溶劑噴出至由旋轉保持裝置10吸附保持之基板W之上表面。此處，作為供給至溶劑噴嘴23之溶劑，係使用可溶解藉由稍後敘述之塗佈處理形成於基板W上之抗蝕劑膜之溶劑。控制部30包含CPU(Central Processing Unit：中央運算處理裝置)及記憶體、或微型電腦，控制旋轉保持裝置10及液體供給裝置20之動作。 The liquid supply device 20 includes a resist nozzle 21 , a coating liquid supply system 22 , a solvent nozzle 23 and a solvent supply system 24 . The coating liquid supply system 22 supplies the resist liquid to the resist nozzle 21 . The resist nozzle 21 sprays the supplied resist liquid onto the upper surface of the substrate W that is adsorbed and held by the rotation holding device 10 and rotated. The solvent supply system 24 supplies solvent to the solvent nozzle 23 . The solvent nozzle 23 sprays the supplied solvent onto the upper surface of the substrate W adsorbed and held by the rotation holding device 10 . Here, as the solvent supplied to the solvent nozzle 23, a solvent that can dissolve the resist film formed on the substrate W by a coating process to be described later is used. The control unit 30 includes a CPU (Central Processing Unit) and a memory, or a microcomputer, and controls the operations of the rotation holding device 10 and the liquid supply device 20 .
就旋轉保持裝置10之具體構成進行說明。旋轉保持裝置10包含吸附保持部11、旋轉軸12、旋轉驅動部13、吸引裝置14、杯15、排液導管16、下表面噴嘴17及清洗液供給系統18。 The specific structure of the rotation holding device 10 is demonstrated. The rotation holding device 10 includes an adsorption holding part 11, a rotation shaft 12, a rotation driving part 13, a suction device 14, a cup 15, a drain pipe 16, a lower surface nozzle 17, and a cleaning liquid supply system 18.
吸附保持部11具有吸附保持基板W之下表面中央部之上表面11u，安 裝於在上下方向延伸之旋轉軸12之上端部。於吸附保持部11之上表面11u，形成有多個吸引孔h(圖2)。旋轉驅動部13使旋轉軸12繞其軸心旋轉。 The adsorption and holding part 11 has an upper surface 11u of the center part of the lower surface of the adsorption and holding substrate W. It is mounted on the upper end of the rotating shaft 12 extending in the up and down direction. A plurality of suction holes h are formed on the upper surface 11u of the adsorption holding part 11 (Fig. 2). The rotation drive unit 13 rotates the rotation shaft 12 around its axis.
如圖1中較粗之虛線所示，於吸附保持部11及旋轉軸12之內部，形成有吸氣路徑vp。吸氣路徑vp連接於吸引裝置14。吸引裝置14包含例如吸氣器等吸引機構，通過吸氣路徑vp及多個吸引孔h吸引吸附保持部11之上表面11u上之空間之環境氣體，並將其排出至塗佈處理裝置1之外部。 As shown by the thick dotted line in FIG. 1 , a suction path vp is formed inside the adsorption holding part 11 and the rotation shaft 12 . The suction path vp is connected to the suction device 14 . The suction device 14 includes a suction mechanism such as an aspirator. It sucks the ambient gas in the space on the upper surface 11u of the adsorption holding part 11 through the suction path vp and the plurality of suction holes h, and discharges it to the coating processing device 1 external.
如圖2所示，杯15以俯視下包圍吸附保持部11之周圍之方式設置，且構成為可藉由無圖示之升降機構移動至上下方向之複數個位置。如圖1所示，杯15包含底部15x及外周壁部15y。底部15x具有大致圓環形狀。底部15x之內周端部向上方彎曲特定高度。外周壁部15y以自底部15x之外周端部向上方延伸、彎曲特定高度，進一步向吸附保持部11傾斜上方延伸之方式形成。 As shown in FIG. 2 , the cup 15 is provided to surround the adsorption holding portion 11 in a plan view, and is configured to be movable to a plurality of positions in the up and down direction by a lifting mechanism (not shown). As shown in FIG. 1 , the cup 15 includes a bottom portion 15x and an outer peripheral wall portion 15y. The base 15x has a generally circular ring shape. The inner peripheral end within 15x of the bottom is bent upward to a specific height. The outer peripheral wall portion 15y is formed such that it extends upward from the outer peripheral end portion of the bottom portion 15x, is bent at a specific height, and further extends obliquely upward toward the adsorption holding portion 11.
於杯15之底部15x，形成有排出口15d。於底部15x之排出口15d之形成部分，安裝有排液導管16。排液導管16之下端部連接於無圖示之排液系統。 A discharge port 15d is formed at the bottom 15x of the cup 15. A drain conduit 16 is installed in the portion where the discharge port 15d is formed on the bottom 15x. The lower end of the drainage conduit 16 is connected to a drainage system (not shown).
如圖2所示，俯視下於杯15之外周壁部15y之內周端部與吸附保持部11之外周端部之間，設置有複數個(於本例中為4個)下表面噴嘴17。複數個下表面噴嘴17以俯視下包圍吸附保持部11之方式將吸附保持部11之中 心設為基準以等角度間隔配置。於各下表面噴嘴17之上端部，設置有朝向上方之液體噴出口17b。 As shown in FIG. 2 , in a plan view, a plurality of (four in this example) lower surface nozzles 17 are provided between the inner peripheral end of the outer peripheral wall 15y of the cup 15 and the outer peripheral end of the adsorption and holding part 11 . The plurality of lower surface nozzles 17 surround the suction and holding part 11 in a plan view. The center is set as the reference and arranged at equal angular intervals. A liquid ejection port 17b directed upward is provided at the upper end of each lower surface nozzle 17.
如圖1所示，各下表面噴嘴17之液體噴出口17b於吸附保持部11之外周端部附近之位置，與由吸附保持部11吸附保持之基板W之下表面對向。另，塗佈處理裝置1具有於無圖示之框體內收納旋轉保持裝置10及液體供給裝置20之構成。下表面噴嘴17固定於例如塗佈處理裝置1之框體。下表面噴嘴17將自清洗液供給系統18供給之清洗液自液體噴出口17b噴出至基板W之下表面。 As shown in FIG. 1 , the liquid ejection port 17 b of each lower surface nozzle 17 is located near the outer peripheral end of the adsorption and holding part 11 and faces the lower surface of the substrate W adsorbed and held by the adsorption and holding part 11 . In addition, the coating processing apparatus 1 has a structure in which the rotation holding device 10 and the liquid supply device 20 are accommodated in a housing (not shown). The lower surface nozzle 17 is fixed to, for example, the frame of the coating processing apparatus 1 . The lower surface nozzle 17 sprays the cleaning liquid supplied from the cleaning liquid supply system 18 from the liquid ejection port 17b to the lower surface of the substrate W.
針對具有上述構成之塗佈處理裝置1，說明塗佈處理時之動作之概要。於開始基板W之塗佈處理時，首先由吸附保持部11以水平姿勢保持基板W。又，以水平方向上外周壁部15y之內周面與基板W之外周端部對向之方式，將杯15定位於上下方向。於該狀態下，溶劑噴嘴23藉由無圖示之噴嘴移動裝置移動至基板W之上方。自溶劑噴嘴23對基板W之上表面噴出特定量之溶劑。之後，溶劑噴嘴23自基板W之上方之位置移動至基板W之側方之位置。又，基板W藉由旋轉驅動部13進行動作而旋轉。藉此，基板W之上表面由溶劑潤濕。 An outline of the operation during coating processing will be described with respect to the coating processing device 1 having the above-mentioned configuration. When starting the coating process of the substrate W, the substrate W is first held in a horizontal posture by the suction holding unit 11 . Furthermore, the cup 15 is positioned in the up-down direction so that the inner peripheral surface of the outer peripheral wall portion 15y faces the outer peripheral end portion of the substrate W in the horizontal direction. In this state, the solvent nozzle 23 is moved above the substrate W by a nozzle moving device (not shown). A specific amount of solvent is sprayed from the solvent nozzle 23 onto the upper surface of the substrate W. After that, the solvent nozzle 23 moves from a position above the substrate W to a position on the side of the substrate W. Furthermore, the substrate W rotates due to the operation of the rotation drive unit 13 . Thereby, the upper surface of the substrate W is wetted by the solvent.
接著，抗蝕劑噴嘴21藉由無圖示之噴嘴移動裝置移動至基板W之上方。於該狀態下，自抗蝕劑噴嘴21對基板W之上表面噴出特定量之抗蝕劑液。藉此，對旋轉之基板W之上表面塗佈抗蝕劑液。自旋轉之基板W向外側飛散之抗蝕劑液被杯15之外周壁部15y之內周面接住。將接住之抗蝕劑 液收集於杯15之底部15x，自排出口15d通過排液導管16導向無圖示之排液系統。如上所述，將基板W之塗佈處理中對基板W之上表面整體塗佈抗蝕劑液之步驟，即於基板W之上表面整體形成抗蝕劑液之液膜之步驟稱為液膜形成步驟。 Next, the resist nozzle 21 is moved above the substrate W by a nozzle moving device (not shown). In this state, a specific amount of resist liquid is sprayed from the resist nozzle 21 onto the upper surface of the substrate W. Thereby, the resist liquid is applied to the upper surface of the rotating substrate W. The resist liquid scattered outward from the rotating substrate W is caught by the inner peripheral surface of the outer peripheral wall portion 15y of the cup 15 . Resist that will catch The liquid is collected at the bottom 15x of the cup 15, and is directed from the discharge port 15d to a drainage system (not shown) through the drainage conduit 16. As mentioned above, in the coating process of the substrate W, the step of coating the entire upper surface of the substrate W with the resist liquid, that is, the step of forming a liquid film of the resist liquid on the entire upper surface of the substrate W is called a liquid film. formation steps.
接著，於停止自抗蝕劑噴嘴21向基板W噴出抗蝕劑液之狀態下，藉由繼續基板W之旋轉，甩開塗佈於基板W之上表面之抗蝕劑液中多餘之抗蝕劑液。又，殘留於基板W上之抗蝕劑液之液膜乾燥。藉此，於基板W之上表面形成抗蝕劑膜。如上所述，將基板W之塗佈處理中使塗佈於基板W之上表面之抗蝕劑液之液膜乾燥之步驟稱為液膜乾燥步驟。 Then, while stopping the spraying of the resist liquid from the resist nozzle 21 to the substrate W, by continuing the rotation of the substrate W, the excess resist in the resist liquid coated on the upper surface of the substrate W is thrown off. Liquid. Furthermore, the liquid film of the resist liquid remaining on the substrate W is dried. Thereby, a resist film is formed on the upper surface of the substrate W. As described above, in the coating process of the substrate W, the step of drying the liquid film of the resist liquid applied on the upper surface of the substrate W is called a liquid film drying step.
於基板W之上表面形成抗蝕劑膜之後，為去除附著於基板W之下表面之抗蝕劑液或抗蝕劑膜，而自下表面噴嘴17向基板W之下表面噴出清洗液。作為清洗液，與自上述溶劑噴嘴23供給至基板W之上表面之溶劑同樣，使用可溶解抗蝕劑膜之溶劑。 After the resist film is formed on the upper surface of the substrate W, in order to remove the resist liquid or resist film attached to the lower surface of the substrate W, a cleaning liquid is sprayed from the lower surface nozzle 17 to the lower surface of the substrate W. As the cleaning liquid, a solvent that can dissolve the resist film is used, similar to the solvent supplied from the solvent nozzle 23 to the upper surface of the substrate W.
之後，停止自下表面噴嘴17向基板W噴出清洗液。於該狀態下，藉由繼續基板W之旋轉，塗佈於基板W之下表面之清洗液乾燥。藉此，去除附著於基板W之下表面之抗蝕劑液或抗蝕劑之固態物質。藉由塗佈處理裝置1之上述一系列動作形成抗蝕劑膜之基板W自塗佈處理裝置1搬出，且由無圖示之曝光裝置實施曝光處理。 After that, the spraying of the cleaning liquid onto the substrate W from the lower surface nozzle 17 is stopped. In this state, by continuing the rotation of the substrate W, the cleaning liquid applied on the lower surface of the substrate W dries. Thereby, the resist liquid or the solid substance of the resist adhered to the lower surface of the substrate W is removed. The substrate W on which the resist film is formed by the above-mentioned series of operations of the coating processing device 1 is carried out from the coating processing device 1, and is exposed by an exposure device (not shown).
[2]液膜乾燥步驟中殘留於基板W之抗蝕劑液 [2] Resist liquid remaining on the substrate W during the liquid film drying step
圖3係成為圖1之塗佈處理裝置1之處理對象之基板W之俯視圖。圖4係圖3之基板W之A-A線剖視圖。本實施形態之基板W係具有約300mm之直徑之圓形基板，如圖3及圖4所示，具有上表面S1及下表面S2。於該基板W之外周端部，形成有缺口N(圖3)。 FIG. 3 is a top view of the substrate W to be processed by the coating processing apparatus 1 of FIG. 1 . FIG. 4 is a cross-sectional view of the substrate W taken along line A-A in FIG. 3 . The substrate W of this embodiment is a circular substrate with a diameter of about 300 mm. As shown in Figures 3 and 4, it has an upper surface S1 and a lower surface S2. A notch N is formed at the outer peripheral end of the substrate W (Fig. 3).
基板W之上表面S1中，於距基板W之外周端部一定寬度之部分，形成有向上方突出且沿該基板W之外周端部延伸之圓環狀之凸部。將基板W之凸部之形成部分稱為邊緣部(Outer support ring：外支撐環)SR。於該基板W中，位於邊緣部SR之內側之部分之厚度(基板之厚度)為100μm以下，小於邊緣部SR之厚度。另，邊緣部SR之厚度大於100μm且為775μm以下，接近例如0.8mm。 On the upper surface S1 of the substrate W, an annular convex portion protruding upward and extending along the outer peripheral end of the substrate W is formed at a certain width from the outer peripheral end of the substrate W. The portion where the convex portion of the substrate W is formed is called an edge portion (Outer support ring) SR. In the substrate W, the thickness of the portion located inside the edge portion SR (thickness of the substrate) is 100 μm or less, which is smaller than the thickness of the edge portion SR. In addition, the thickness of the edge portion SR is greater than 100 μm and 775 μm or less, which is close to, for example, 0.8 mm.
於以下之說明中，將基板W之上表面S1中邊緣部RP之內側之區域稱為內側區域IA。圖4中，將基板W整體之剖視圖中邊緣部SR及其周邊部之放大剖視圖顯示於對白框內。 In the following description, the area inside the edge portion RP in the upper surface S1 of the substrate W is called the inner area IA. In FIG. 4 , an enlarged cross-sectional view of the edge portion SR and its peripheral portion in the cross-sectional view of the entire substrate W is shown in a white frame.
如圖4之對白框內所示，本實施形態之基板W中，於邊緣部SR與內側區域IA之邊界形成有落差ST。如此，於位於邊緣部SR之內周端部之落差ST，容易於基板W之塗佈處理中之液膜乾燥步驟中滯留抗蝕劑液。若滯留之抗蝕劑液乾燥，則存在於上述落差ST及其附近之抗蝕劑膜之厚度局部變大。此種抗蝕劑膜之厚度之不均一成為曝光不良及產生粒子之主要原因。 As shown in the dialogue box of FIG. 4 , in the substrate W of this embodiment, a step ST is formed at the boundary between the edge portion SR and the inner area IA. In this way, the step ST located at the inner peripheral end of the edge portion SR easily accumulates the resist liquid in the liquid film drying step in the coating process of the substrate W. When the retained resist liquid dries, the thickness of the resist film existing in and around the step ST becomes locally larger. This uneven thickness of the resist film is a major cause of poor exposure and generation of particles.
圖5係顯示液膜乾燥步驟中於基板W之邊緣部SR與內側區域IA之邊界之落差ST滯留抗蝕劑液之例之圖。於圖5中，上段、中段及下段按時間序列依序由放大剖視圖顯示液膜乾燥步驟中存在於基板W之邊緣部SR及其周邊部之抗蝕劑液R1或抗蝕劑膜R2之狀態。 FIG. 5 is a diagram showing an example in which the resist liquid is retained in the step ST between the edge portion SR of the substrate W and the inner area IA in the liquid film drying step. In FIG. 5 , the upper, middle, and lower sections are enlarged cross-sectional views showing the state of the resist liquid R1 or the resist film R2 present in the edge portion SR of the substrate W and its peripheral portion in the liquid film drying step in time series. .
如圖5之上段之剖視圖所示，於液膜乾燥步驟之開始時點，於基板W之上表面S1形成有具有流動性之抗蝕劑液R1之液膜。藉由基板W旋轉，而對抗蝕劑液R1作用自基板W之中心向外周端部之離心力。又，於包圍基板W之空間內產生氣流。藉此，如圖5之中段之剖視圖中較粗之實線箭頭所示，於液膜之上層部分流動之抗蝕劑液R1之一部分被甩開至基板W之外側。 As shown in the cross-sectional view in the upper section of FIG. 5 , at the beginning of the liquid film drying step, a liquid film of fluid resist liquid R1 is formed on the upper surface S1 of the substrate W. As the substrate W rotates, a centrifugal force from the center of the substrate W toward the outer peripheral end acts on the resist liquid R1. Furthermore, airflow is generated in the space surrounding the substrate W. As a result, part of the resist liquid R1 flowing in the upper part of the liquid film is thrown away to the outside of the substrate W, as shown by the thicker solid arrow in the cross-sectional view in the middle of FIG. 5 .
藉由甩開流動之多餘之抗蝕劑液R1，而於基板W之上表面S1中，抗蝕劑液R1之液膜自基板W之中心向外周端部薄膜化且連續乾燥。此時，如圖5之中段之剖視圖中空白箭頭所示，若滯留於落差ST之抗蝕劑液R1乾燥，則如圖5之下段之剖視圖所示，形成於落差ST及其周邊部之抗蝕劑膜R2之厚度與其他部分相比變厚。 By shaking off the flowing excess resist liquid R1, the liquid film of the resist liquid R1 on the upper surface S1 of the substrate W becomes thinner from the center of the substrate W toward the outer peripheral end and is continuously dried. At this time, as shown by the blank arrow in the cross-sectional view in the middle section of Figure 5, if the resist liquid R1 retained in the step ST dries, the resist liquid R1 formed in the step ST and its surroundings will be formed as shown in the cross-section view in the lower section of Figure 5. The thickness of the etching film R2 is thicker than that of other parts.
如上所述，為防止抗蝕劑液滯留於落差ST，而考慮於液膜乾燥步驟之期間中明顯提高基板W之轉速之方法。於該情形時，液膜乾燥步驟中對流通於液膜之上層部分之抗蝕劑液R1作用更大之離心力。又，於包圍基板W之空間內產生更強之氣流。然而，若於液膜乾燥步驟之初始階段明顯提高基板W之轉速，則橫跨形成於基板W上之抗蝕劑膜R2整體產生斑點。 As described above, in order to prevent the resist liquid from remaining in the step ST, a method of significantly increasing the rotation speed of the substrate W during the liquid film drying step is considered. In this case, a greater centrifugal force acts on the resist liquid R1 flowing in the upper portion of the liquid film in the liquid film drying step. In addition, a stronger air flow is generated in the space surrounding the substrate W. However, if the rotation speed of the substrate W is significantly increased in the initial stage of the liquid film drying step, spots will occur across the entire resist film R2 formed on the substrate W.
因此，於本實施形態中，液膜乾燥步驟之基板W之轉速隨著時間之經過變更為2階段。具體而言，於液膜乾燥步驟之開始時點至液膜乾燥步驟之結束時點之前之中間時點之間，基板W之轉速被調整為第1轉速。之後，於中間時點至結束時點之間，基板W之轉速被調整為高於第1轉速之第2轉速。 Therefore, in this embodiment, the rotation speed of the substrate W in the liquid film drying step is changed to two stages with the passage of time. Specifically, between the start time of the liquid film drying step and the intermediate time point before the end time of the liquid film drying step, the rotation speed of the substrate W is adjusted to the first rotation speed. Thereafter, between the intermediate time point and the end time point, the rotation speed of the substrate W is adjusted to a second rotation speed higher than the first rotation speed.
此處，將基板W之內側區域IA中包含基板W之中心且相對於基板W之中心成為同心之圓形之區域稱為中央區域。又，將基板W之內側區域IA中包圍中央區域且包含基板W之外周端部之區域稱為圓環區域。另，中央區域之直徑為例如基板W之直徑之一半左右。 Here, a circular area within the inner area IA of the substrate W that includes the center of the substrate W and is concentric with the center of the substrate W is called a central area. In addition, the area within the inner area IA of the substrate W that surrounds the central area and includes the outer peripheral end of the substrate W is called an annular area. In addition, the diameter of the central region is about half of the diameter of the substrate W, for example.
於該情形時，藉由例如模擬或實驗等，將第1轉速規定為於形成於中央區域之抗蝕劑膜R2不產生斑點之程度之速度。另一方面，藉由例如模擬或實驗等，將第2轉速規定為具有流動性之抗蝕劑液R1不滯留於落差ST之程度之速度。再者，將中間時點規定為開始液膜乾燥步驟之後，基板W之中央區域上之抗蝕劑液R1乾燥且存在於圓環區域上之抗蝕劑液R1流動之狀態之期間內。 In this case, the first rotation speed is determined by, for example, simulation or experiment, to a speed that does not cause spots on the resist film R2 formed in the central region. On the other hand, the second rotation speed is defined, for example, through simulation or experiment, as a speed at which the fluid resist liquid R1 does not remain in the step ST. Furthermore, the intermediate time point is defined as the period during which the resist liquid R1 on the central region of the substrate W is dried and the resist liquid R1 on the annular region is flowing after the liquid film drying step is started.
藉由如上所述調整基板W之轉速，而於液膜乾燥步驟之開始時點至中間時點內，可不產生斑點地使中央區域上之抗蝕劑液R1乾燥。另一方面，於液膜乾燥步驟之中間時點至結束時點內，對流通於圓環區域上之抗蝕劑液R1作用更大之離心力。又，於包圍基板W之空間內產生更強之氣 流。藉此，防止抗蝕劑液R1滯留於落差ST。因此，防止落差ST及其周邊部之抗蝕劑膜R2之厚度局部變大。 By adjusting the rotation speed of the substrate W as described above, the resist liquid R1 on the central area can be dried without causing spots from the beginning to the middle time of the liquid film drying step. On the other hand, from the middle point to the end point of the liquid film drying step, a greater centrifugal force acts on the resist liquid R1 flowing on the annular area. In addition, a stronger gas is generated in the space surrounding the substrate W flow. This prevents the resist liquid R1 from remaining in the step ST. Therefore, the thickness of the resist film R2 in the step ST and its peripheral portion is prevented from being locally increased.
[3]塗佈處理中之基板W之轉速之控制例 [3] Example of controlling the rotation speed of the substrate W during coating processing
圖6係顯示本發明之一實施形態之塗佈處理中之基板W之轉速之控制例之圖。於圖6之上段，由圖表顯示圖1之塗佈處理裝置1之塗佈處理中之基板W之轉速之變化。於圖6之上段之圖表中，縱軸顯示基板W之轉速，橫軸顯示時間。於圖6之下段之複數個對白框，由俯視圖及縱剖視圖顯示於塗佈處理中之複數個時點存在於基板W上之抗蝕劑液R1或抗蝕劑膜R2之狀態。 FIG. 6 is a diagram showing an example of controlling the rotation speed of the substrate W during the coating process according to one embodiment of the present invention. In the upper part of FIG. 6 , a graph shows changes in the rotation speed of the substrate W during the coating process of the coating processing device 1 of FIG. 1 . In the graph in the upper part of FIG. 6 , the vertical axis shows the rotation speed of the substrate W, and the horizontal axis shows time. The plurality of dialog boxes in the lower section of FIG. 6 show the state of the resist liquid R1 or the resist film R2 existing on the substrate W at a plurality of time points in the coating process from a plan view and a longitudinal cross-sectional view.
圖7係顯示圖6之液膜乾燥步驟中存在於基板W之邊緣部SR及其周邊部之抗蝕劑液R1或抗蝕劑膜R2之狀態之變化之圖。於圖7中，自上至下按4個階段之時間序列依序由放大剖視圖顯示液膜乾燥步驟中存在於基板W之邊緣部SR及其周邊部之抗蝕劑液R1或抗蝕劑膜R2之狀態。 FIG. 7 is a diagram showing changes in the state of the resist liquid R1 or the resist film R2 present in the edge portion SR of the substrate W and its peripheral portion in the liquid film drying step of FIG. 6 . In FIG. 7 , the resist liquid R1 or the resist film existing in the edge portion SR of the substrate W and its peripheral portion in the liquid film drying step is shown in an enlarged cross-sectional view in a time series of four stages from top to bottom. The status of R2.
另，基板W之轉速藉由控制部30控制圖1之旋轉驅動部13進行調整。又，控制部30控制圖1之溶劑供給系統24，藉此進行對基板W之上表面S1之溶劑之供給及停止。又，控制部30控制圖1之塗佈液供給系統22，藉此進行對基板W之上表面S1之抗蝕劑液R1之供給及停止。再者，控制部30控制圖1之清洗液供給系統18，藉此進行對基板W之下表面S2之清洗液之供給及停止。 In addition, the rotation speed of the substrate W is adjusted by the control unit 30 controlling the rotation drive unit 13 in FIG. 1 . In addition, the control unit 30 controls the solvent supply system 24 in FIG. 1 to supply and stop the solvent to the upper surface S1 of the substrate W. In addition, the control unit 30 controls the coating liquid supply system 22 in FIG. 1 to supply and stop the resist liquid R1 on the upper surface S1 of the substrate W. Furthermore, the control unit 30 controls the cleaning liquid supply system 18 in FIG. 1 to supply and stop the cleaning liquid to the lower surface S2 of the substrate W.
於塗佈處理裝置1之塗佈處理之初始狀態下，具有圖3及圖4之構成之未處理之基板W由圖1之吸附保持部11以水平姿勢吸附保持。此時，將基板W之轉速維持為0。再者，以杯15之外周壁部15y之內周面與基板W之外周端部對向之方式，將杯15定位於上下方向。 In the initial state of the coating process of the coating processing apparatus 1, the unprocessed substrate W having the structure shown in FIGS. 3 and 4 is adsorbed and held in a horizontal position by the adsorption and holding part 11 of FIG. 1 . At this time, the rotation speed of the substrate W is maintained at 0. Furthermore, the cup 15 is positioned in the up-down direction so that the inner peripheral surface of the outer peripheral wall portion 15y of the cup 15 faces the outer peripheral end portion of the substrate W.
如圖6所示，首先開始液膜形成步驟。於時點t1至時點t2之期間p1內，自圖1之溶劑噴嘴23對基板W之上表面S1供給特定量之溶劑。藉此，如與時點t2對應之對白框內所示，於基板W之上表面S1上保持特定量之溶劑。 As shown in Figure 6, the liquid film forming step is started first. During the period p1 from time point t1 to time point t2, a specific amount of solvent is supplied to the upper surface S1 of the substrate W from the solvent nozzle 23 in FIG. 1 . Thereby, as shown in the dialogue box corresponding to time point t2, a specific amount of solvent is maintained on the upper surface S1 of the substrate W.
接著，自時點t3至時點t4，基板W之轉速自0上升至s1，基板W之上表面S1所保持之溶劑自基板W之中心向基板W之外周端部擴展。將轉速s1設定於例如500rpm以上且1500rpm以下之範圍內。 Then, from time point t3 to time point t4, the rotation speed of the substrate W increases from 0 to s1, and the solvent held on the upper surface S1 of the substrate W expands from the center of the substrate W to the outer peripheral end of the substrate W. The rotation speed s1 is set in the range of 500 rpm or more and 1500 rpm or less, for example.
如上所述，藉由對未處理之基板W之上表面S1供給溶劑，而將基板W之上表面S1改性，抗蝕劑液R1容易於基板W之上表面S1擴展。如此，將於塗佈抗蝕劑液R1之前使基板W之上表面S1改性之處理稱為預潤濕。另，於預潤濕中，基板W亦可旋轉。於該情形時，將基板W之轉速設定於例如大於0rpm且1000rpm以下之範圍內。 As described above, by supplying a solvent to the upper surface S1 of the unprocessed substrate W, the upper surface S1 of the substrate W is modified, and the resist liquid R1 easily spreads on the upper surface S1 of the substrate W. In this way, the process of modifying the upper surface S1 of the substrate W before applying the resist liquid R1 is called prewetting. In addition, during pre-wetting, the substrate W can also be rotated. In this case, the rotation speed of the substrate W is set in a range of greater than 0 rpm and less than 1000 rpm, for example.
接著，時點t4至時點t6之期間p2內，自圖1之抗蝕劑噴嘴21對基板W之上表面S1供給特定量之抗蝕劑液R1。此時，自時點t4至時點t6之前之時點t5，基板W之轉速上升至高於s1之s2。又，自時點t5起一定期間內基板 W之轉速維持於s2。將轉速s2設定於例如1000rpm以上且3000rpm以下之範圍內。藉此，如與時點t5對應之對白框內所示，於基板W之上表面S1之中央部形成抗蝕劑液R1之塊(核)。又，自時點t5至時點t6，抗蝕劑液R1之核被整形。 Next, during the period p2 from time point t4 to time point t6, a specific amount of resist liquid R1 is supplied to the upper surface S1 of the substrate W from the resist nozzle 21 in FIG. 1 . At this time, from time point t4 to time point t5 before time point t6, the rotation speed of the substrate W rises to s2 which is higher than s1. In addition, within a certain period from time point t5, the substrate The speed of W remains at s2. The rotation speed s2 is set in the range of 1000rpm or more and 3000rpm or less, for example. Thereby, as shown in the dialog box corresponding to time point t5, a lump (nucleus) of the resist liquid R1 is formed in the center of the upper surface S1 of the substrate W. Furthermore, from the time point t5 to the time point t6, the core of the resist liquid R1 is shaped.
自時點t5起一定期間內基板W之轉速維持於s2之後，至時點t6基板W之轉速下降至低於s1及s2之s3。自時點t6起一定期間內基板W之轉速維持於s3。將轉速s3設定於例如0rpm以上且500rpm以下之範圍內。 From time point t5, the rotation speed of substrate W is maintained at s2 for a certain period of time, and at time point t6, the rotation speed of substrate W drops to s3, which is lower than s1 and s2. From the time point t6, the rotation speed of the substrate W is maintained at s3 for a certain period of time. The rotation speed s3 is set in a range from 0 rpm to 500 rpm, for example.
於自時點t6經過一定期間後，至時點t7基板W之轉速上升至高於s2之s4，一定期間內基板W之轉速維持於s4。將轉速s4設定於例如0rpm以上且3000rpm以下之範圍內。又，於自時點t7經過一定期間後，至時點t8，基板W之轉速下降至低於s4之s5。將轉速s5設定於例如500rpm以上且1500rpm以下之範圍內。自上述時點t6至時點t8，抗蝕劑液R1自基板W之中心向外周端部擴展。藉此，如與時點t8對應之對白框內所示，於基板W之上表面S1整體形成抗蝕劑液R1之液膜，液膜形成步驟結束。 After a certain period of time has passed from time point t6, the rotation speed of substrate W rises to s4, which is higher than s2, at time point t7, and the rotation speed of substrate W remains at s4 during a certain period of time. The rotation speed s4 is set in a range from 0 rpm to 3000 rpm, for example. In addition, after a certain period of time has passed from time point t7 to time point t8, the rotation speed of the substrate W decreases to s5, which is lower than s4. The rotation speed s5 is set in the range of 500 rpm or more and 1500 rpm or less, for example. From the above-mentioned time point t6 to the time point t8, the resist liquid R1 spreads from the center of the substrate W toward the outer peripheral end. Thereby, as shown in the dialog box corresponding to time point t8, a liquid film of the resist liquid R1 is formed entirely on the upper surface S1 of the substrate W, and the liquid film forming step is completed.
接著，開始液膜乾燥步驟。於液膜乾燥步驟中，自時點t8至時點t9，基板W之轉速維持於s5。時點t8相當於上述液膜乾燥步驟之開始時點。轉速s5相當於上述第1轉速。 Next, the liquid film drying step begins. In the liquid film drying step, from time point t8 to time point t9, the rotation speed of the substrate W is maintained at s5. The time point t8 corresponds to the starting time point of the above-mentioned liquid film drying step. The rotation speed s5 corresponds to the above-mentioned first rotation speed.
於時點t8，如自圖7上數起第1段剖視圖所示，於基板W之上表面S1形成有具有流動性之抗蝕劑液R1之液膜。於時點t8至時點t9之間，藉由基 板W之轉速維持於s5(第1轉速)，而如圖7上數起第2段剖視圖中較粗之實線箭頭所示，於液膜之上層部分流動之抗蝕劑液R1之一部分甩開至基板W之外側。此時，於基板W之中央區域，抗蝕劑液R1自基板W之中心向外周端部依序乾燥。 At time point t8, as shown in the first cross-sectional view from the top of FIG. 7 , a fluid film of the resist liquid R1 is formed on the upper surface S1 of the substrate W. Between time point t8 and time point t9, by the basis The rotation speed of the plate W is maintained at s5 (the first rotation speed), and as shown by the thicker solid arrow in the cross-sectional view of the second section from the top of Figure 7, part of the resist liquid R1 flowing in the upper part of the liquid film is thrown away. Open to the outside of the substrate W. At this time, in the central area of the substrate W, the resist liquid R1 dries sequentially from the center to the outer peripheral end of the substrate W.
時點t9相當於上述之液膜乾燥步驟之中間時點。於時點t9，如與圖6之時點t9對應之對白框內所示，於基板W之上表面S1之中央區域形成有抗蝕劑膜R2。另一方面，於基板W之上表面S1之圓環區域，具有流動性之抗蝕劑液R1自基板W之中央向基板W之外周端部流通。 Time point t9 corresponds to the intermediate time point of the above-mentioned liquid film drying step. At time point t9, as shown in the dialogue box corresponding to time point t9 in FIG. 6, a resist film R2 is formed on the central area of the upper surface S1 of the substrate W. On the other hand, in the annular area of the upper surface S1 of the substrate W, the fluid resist liquid R1 flows from the center of the substrate W to the outer peripheral end of the substrate W.
之後，於時點t9基板W之轉速上升至高於s5之s6。將轉速s6設定於例如1500rpm以上且3500rpm以下之範圍內。自時點t9至時點t10，基板W之轉速維持於s6。轉速s6相當於上述第2轉速。於時點t10液膜乾燥步驟結束。藉此，於時點t10，如與圖6之時點t10對應之對白框內所示，於基板W之上表面S1整體形成抗蝕劑膜R2。時點t10相當於上述之液膜乾燥步驟之結束時點。 After that, at time point t9, the rotation speed of the substrate W rises to s6 which is higher than s5. The rotation speed s6 is set in the range of 1500rpm or more and 3500rpm or less, for example. From time point t9 to time point t10, the rotation speed of the substrate W is maintained at s6. The rotation speed s6 corresponds to the above-mentioned second rotation speed. At time point t10, the liquid film drying step ends. Thereby, at time point t10, as shown in the white box corresponding to time point t10 in FIG. 6, the resist film R2 is formed entirely on the upper surface S1 of the substrate W. The time point t10 corresponds to the end time point of the above-mentioned liquid film drying step.
於時點t9至時點t10之間，藉由基板W之轉速維持於s6(第2轉速)，而如自圖7上數起第3段剖視圖中較粗之實線箭頭所示，於液膜之上層部分流動之抗蝕劑液R1被更強地甩開至基板W之外側。藉此，防止於落差ST及其周邊部滯留抗蝕劑液R1，且存在於基板W之圓環區域之抗蝕劑液R1乾燥。因此，於時點t10，如自圖7上數起第4段剖視圖所示，形成於落差ST及其周邊部之抗蝕劑膜R2之厚度與其他部分大致相等。根據該等結果， 於液膜乾燥步驟結束時，於包含落差ST之基板W之上表面S1整體，以均一之厚度形成抗蝕劑膜R2。 Between time point t9 and time point t10, the rotation speed of the substrate W is maintained at s6 (the second rotation speed), and as shown by the thicker solid arrow in the cross-sectional view of the third section from the top of Figure 7, the liquid film The resist liquid R1 flowing in the upper layer part is thrown away more strongly to the outside of the substrate W. Thereby, the resist liquid R1 is prevented from remaining in the step ST and its peripheral portion, and the resist liquid R1 present in the annular region of the substrate W is dried. Therefore, at time point t10, as shown in the 4th sectional view from the top of FIG. 7 , the thickness of the resist film R2 formed on the step ST and its peripheral portion is substantially equal to that of other portions. Based on these results, At the end of the liquid film drying step, a resist film R2 is formed with a uniform thickness on the entire upper surface S1 of the substrate W including the step ST.
於經過時點t10之後，一定期間內基板W之轉速維持於s5。之後，於時點t11轉速下降至低於s5及s6之s8。於該狀態下，一定期間內自圖1之複數個下表面噴嘴17對基板W之下表面S2供給清洗液。藉此，由清洗液去除附著於基板W之下表面S2之抗蝕劑液R1或抗蝕劑之固態物質。 After the time point t10 passes, the rotation speed of the substrate W is maintained at s5 for a certain period of time. After that, at time point t11, the speed drops to s8, which is lower than s5 and s6. In this state, the cleaning liquid is supplied to the lower surface S2 of the substrate W from the plurality of lower surface nozzles 17 in FIG. 1 for a certain period of time. Thereby, the resist liquid R1 or the solid substance of the resist adhered to the lower surface S2 of the substrate W is removed by the cleaning liquid.
如此，於洗淨基板W之下表面之步驟(所謂背面清洗步驟)中，將基板W之轉速設定為低於由液膜乾燥步驟設定之轉速。因此，於背面清洗步驟中，與使基板W以液膜乾燥步驟中之轉速旋轉之情形相比，可減少自基板W飛散之清洗液之量。藉此，防止自基板W之下表面S2飛散之清洗液附著於基板W之上表面S1上所形成之抗蝕劑膜R2上。其結果，可防止產生基板W之處理不良。藉由上述背面清洗步驟結束，而結束基板W之塗佈處理。 In this way, in the step of cleaning the lower surface of the substrate W (the so-called back surface cleaning step), the rotation speed of the substrate W is set lower than the rotation speed set in the liquid film drying step. Therefore, in the back surface cleaning step, compared with the case where the substrate W is rotated at the rotation speed in the liquid film drying step, the amount of cleaning liquid scattered from the substrate W can be reduced. Thereby, the cleaning liquid scattered from the lower surface S2 of the substrate W is prevented from adhering to the resist film R2 formed on the upper surface S1 of the substrate W. As a result, processing failure of the substrate W can be prevented. When the above back surface cleaning step is completed, the coating process of the substrate W is completed.
於上述圖6之例中，時點t8至時點t10之時間之長度(液膜乾燥步驟之開始至結束之時間)為例如15秒以上且30秒以下。又，時點t8至時點t9之時間之長度為例如10秒以上且20秒以下。 In the above example of FIG. 6 , the length of time from time point t8 to time point t10 (the time from the beginning to the end of the liquid film drying step) is, for example, 15 seconds or more and 30 seconds or less. Moreover, the length of time from time point t8 to time point t9 is, for example, 10 seconds or more and 20 seconds or less.
[4]液膜乾燥步驟之中間時點 [4] The middle point of the liquid film drying step
如上所述，液膜乾燥步驟之中間時點規定為於開始液膜乾燥步驟之後，基板W之中央區域上之抗蝕劑液R1乾燥且存在於圓環區域上之抗蝕 劑液R1流動之狀態之期間內。 As mentioned above, the intermediate time point of the liquid film drying step is defined as after starting the liquid film drying step, the resist liquid R1 on the central area of the substrate W is dried and the resist liquid R1 existing on the annular area is During the period when the agent liquid R1 is flowing.
此處，例如圖6之例中，於液膜乾燥步驟中將基板W之轉速固定維持於s5之情形時，基板W上之抗蝕劑液R1整體乾燥之前，由於流動於液膜之上層部分之抗蝕劑液R1產生干涉條紋。該干涉條紋可根據基板W之轉速及抗蝕劑液R1之種類視認。 Here, for example, in the example of FIG. 6 , when the rotation speed of the substrate W is fixed and maintained at s5 in the liquid film drying step, before the entire resist liquid R1 on the substrate W dries, it flows in the upper part of the liquid film. The resist liquid R1 produces interference fringes. The interference fringes can be visually recognized based on the rotation speed of the substrate W and the type of resist liquid R1.
因此，於可確認上述干涉條紋之情形時，較佳為將中間時點規定為開始液膜乾燥步驟之後，供給至基板W之上表面S1之抗蝕劑液R1之表面所產生之干涉條紋消失之前之時點。藉此，藉由於液膜乾燥步驟之中間時點使基板W之轉速上升，而可順滑甩開存在於基板W之外周部及其附近且具有流動性之抗蝕劑液R1。 Therefore, when the above-mentioned interference fringes can be confirmed, it is preferable to set the intermediate time point as after starting the liquid film drying step and before the interference fringes generated on the surface of the resist liquid R1 supplied to the upper surface S1 of the substrate W disappear. time point. Thereby, by increasing the rotation speed of the substrate W at an intermediate point in the liquid film drying step, the fluid resist liquid R1 present in and near the outer peripheral portion of the substrate W can be smoothly thrown away.
[5]效果 [5]Effect
(1)於上述塗佈處理裝置1中，對具有邊緣部SR之基板W實施塗佈處理。該塗佈處理包含液膜形成步驟及液膜乾燥步驟。首先，於液膜形成步驟中，預潤濕後對旋轉之基板W之上表面S1供給抗蝕劑液R1。藉此，使抗蝕劑液擴展至基板W之上表面S1整體，結束液膜形成步驟。 (1) In the coating processing apparatus 1 described above, coating processing is performed on the substrate W having the edge portion SR. This coating process includes a liquid film forming step and a liquid film drying step. First, in the liquid film forming step, the resist liquid R1 is supplied to the upper surface S1 of the rotating substrate W after pre-wetting. Thereby, the resist liquid is spread to the entire upper surface S1 of the substrate W, and the liquid film forming step is completed.
接著，於液膜乾燥步驟中，為使基板W乾燥，而自開始時點至中間時點基板以第1轉速旋轉。藉此，位於基板W之中央區域且具有流動性之抗蝕劑液向基板W之外周部移動。因此，基板W之上表面S1之中央區域乾燥。 Next, in the liquid film drying step, in order to dry the substrate W, the substrate is rotated at the first rotation speed from the starting point to the intermediate point. Thereby, the resist liquid which is located in the central area of the substrate W and has fluidity moves toward the outer peripheral portion of the substrate W. Therefore, the central area of the upper surface S1 of the substrate W is dried.
接著，自液膜乾燥步驟之中間時點至結束時點基板W以高於第1轉速之第2轉速旋轉。於該情形時，對於基板W之外周部及其附近流動之抗蝕劑液R1作用更大之離心力。又，於包圍基板W之空間，產生更大之氣流。藉此，於基板W之上表面S1上自基板W之中心向外周部流動之抗蝕劑液R1之大部分自基板W之中央區域超過邊緣部SR飛散至基板W之外側。換言之，於基板W之上表面S1上導向邊緣部SR與內側區域IA之邊界之落差ST之不需要之抗蝕劑液R1被甩開至基板W之外側。 Next, the substrate W is rotated at a second rotation speed higher than the first rotation speed from the middle point to the end point of the liquid film drying step. In this case, a greater centrifugal force acts on the resist liquid R1 flowing in and around the outer peripheral portion of the substrate W. In addition, a larger air flow is generated in the space surrounding the substrate W. Thereby, most of the resist liquid R1 flowing from the center to the outer peripheral portion of the substrate W on the upper surface S1 of the substrate W is scattered from the central region of the substrate W beyond the edge portion SR to the outside of the substrate W. In other words, the unnecessary resist liquid R1 on the upper surface S1 of the substrate W is thrown away to the outside of the substrate W in the step ST between the guide edge portion SR and the inner area IA.
其結果，可防止起因於塗佈處理時不需要之抗蝕劑液R1殘留於基板W上而產生基板W之處理不良及基板W之污染。 As a result, it is possible to prevent the unnecessary resist liquid R1 caused by the coating process from remaining on the substrate W, resulting in processing defects of the substrate W and contamination of the substrate W.
(2)於圖6之例中，第2轉速即s7設定為高於第1轉速即s4之2倍之轉速。於該情形時，對導向位於邊緣部SR之內緣之落差ST之不需要之抗蝕劑液R1作用更大之離心力。又，於包圍基板W之空間產生更大之氣流。藉此，邊緣部SR之內側之不需要之抗蝕劑液R1被更順滑地甩開至基板W之外側。 (2) In the example of Figure 6, the second rotational speed, s7, is set to a rotational speed higher than twice the first rotational speed, s4. In this case, a greater centrifugal force acts on the unnecessary resist liquid R1 guided to the step ST located at the inner edge of the edge portion SR. In addition, a larger air flow is generated in the space surrounding the substrate W. Thereby, the unnecessary resist liquid R1 inside the edge portion SR is thrown away to the outside of the substrate W more smoothly.
[6]確認試驗 [6] Confirmation test
本發明者們為確認上述塗佈處理之效果，而進行以下之確認試驗。首先，本發明者們藉由依照圖6之例進行塗佈處理而製作實施例之基板W。於以下之說明中，將該基板W稱為實施例基板W1。又，本發明者們除於液膜乾燥步驟之期間中將基板W之轉速固定維持為第1轉速(s5)之點 以外亦依照圖6之例進行塗佈處理，藉此製作比較例之基板W。於以下之說明中，將該基板W稱為比較例基板W2。另，於製作實施例基板W1及比較例基板W2時，形成抗蝕劑膜R2之後，去除存在於包含邊緣部SR之基板周緣部之抗蝕劑膜R2之部分。 In order to confirm the effect of the above-mentioned coating treatment, the inventors conducted the following confirmation test. First, the inventors produced the substrate W of the embodiment by performing a coating process according to the example of FIG. 6 . In the following description, the substrate W is referred to as the embodiment substrate W1. Furthermore, the inventors fixed and maintained the rotation speed of the substrate W at the first rotation speed (s5) during the liquid film drying step. In addition, the coating process was also carried out according to the example in FIG. 6 to prepare the substrate W of the comparative example. In the following description, this substrate W is referred to as the comparative example substrate W2. In addition, when the example substrate W1 and the comparative example substrate W2 are produced, after the resist film R2 is formed, the portion of the resist film R2 present in the peripheral portion of the substrate including the edge portion SR is removed.
本發明者們針對已製作之實施例基板W1及比較例基板W2，測定通過各基板之中心之直線上之抗蝕劑膜R2之膜厚分佈。圖8係顯示實施例基板W1及比較例基板W2之抗蝕劑膜R2之膜厚分佈之一部分之圖。於圖8中，與實施例基板W1及比較例基板W2之模式性俯視圖一起，由放大之圖表顯示模式性俯視圖中由虛線包圍之2個部分之膜厚分佈。 The present inventors measured the film thickness distribution of the resist film R2 on a straight line passing through the center of each substrate of the example substrate W1 and the comparative example substrate W2 that have been produced. FIG. 8 is a diagram showing part of the film thickness distribution of the resist film R2 of the example substrate W1 and the comparative example substrate W2. In FIG. 8 , together with the schematic top views of the example substrate W1 and the comparative example substrate W2 , the film thickness distribution of the two portions surrounded by dotted lines in the schematic top view is shown in an enlarged graph.
於圖8之圖表中，縱軸顯示抗蝕劑膜R2之膜厚，橫軸顯示通過基板之中心之直線L上之位置。實施例基板W1及比較例基板W2之直徑均為300mm。於橫軸上，「147.0」顯示直線L上自基板W之中心向一方向(於圖8之例中為右方向)分離147mm之位置。又，「-147.0」顯示直線L上自基板W之中心向反方向(於圖8之例中為左方向)分離147mm之位置。又，於橫軸上，以空白之箭頭顯示直線L上之落差ST之位置。再者，於圖8之圖表中，實線顯示與實施例基板W1對應之膜厚分佈，一點劃線顯示與比較例基板W2對應之膜厚分佈。 In the graph of FIG. 8 , the vertical axis shows the film thickness of the resist film R2 and the horizontal axis shows the position on the straight line L passing through the center of the substrate. The diameters of the example substrate W1 and the comparative example substrate W2 are both 300 mm. On the horizontal axis, "147.0" indicates the position on the straight line L that is 147 mm away from the center of the substrate W in one direction (right direction in the example of Figure 8). In addition, "-147.0" indicates a position on the straight line L that is 147 mm away from the center of the substrate W in the opposite direction (left direction in the example of Figure 8). In addition, on the horizontal axis, the position of the drop ST on the straight line L is shown by a blank arrow. Furthermore, in the graph of FIG. 8 , the solid line shows the film thickness distribution corresponding to the example substrate W1, and the one-dot chain line shows the film thickness distribution corresponding to the comparative example substrate W2.
如圖8所示，形成於實施例基板W1之落差ST及其附近之抗蝕劑膜R2之膜厚與形成於比較例基板W2之落差ST及其附近之抗蝕劑膜R2之膜厚相比非常小。藉此，可確認形成於實施例基板W1之抗蝕劑膜R2之膜厚分佈 與形成於比較例基板W2之抗蝕劑膜R2之膜厚分佈相比更均一化。 As shown in FIG. 8 , the film thickness of the resist film R2 formed on the step ST and its vicinity of the substrate W1 of the example is compared with the film thickness of the resist film R2 formed on the step ST and its vicinity of the substrate W2 of the comparative example. very small. Through this, the film thickness distribution of the resist film R2 formed on the example substrate W1 can be confirmed. The film thickness distribution of the resist film R2 formed on the comparative example substrate W2 is more uniform.
[7]其他實施形態 [7]Other implementation forms
(1)於上述實施形態之圖4之基板W中，形成於邊緣部SR與內側區域IA之邊界之落差ST雖包含2個落差，但本發明不限定於此。於成為處理對象之基板W中，落差ST可僅包含1個落差。又，落差ST亦可形成為於基板W之縱剖面中，邊緣部SR之內周面與內側區域IA以曲線連接。 (1) In the substrate W of FIG. 4 in the above embodiment, the step ST formed at the boundary between the edge portion SR and the inner area IA includes two steps, but the present invention is not limited to this. In the substrate W to be processed, the step ST may include only one step. Moreover, the step ST may be formed in the longitudinal cross section of the substrate W such that the inner peripheral surface of the edge portion SR and the inner area IA are connected by a curve.
(2)於上述實施形態之圖6之例中，雖液膜形成步驟中設定之基板W之轉速s3、s1、s2、s4以依序變高之方式設定，但轉速s1~s4之關係不限定於上述之例。轉速s1~s4之各者只要設定於上述實施形態中例示之速度之範圍內即可。 (2) In the example of FIG. 6 of the above embodiment, although the rotation speeds s3, s1, s2, and s4 of the substrate W set in the liquid film forming step are set to become higher in sequence, the relationship between the rotation speeds s1 to s4 is not the same. Limited to the above example. Each of the rotation speeds s1 to s4 may be set within the speed range illustrated in the above embodiment.
(3)於上述實施形態之圖6之例中，雖於液膜形成步驟進行預潤濕，但本發明不限定於此。亦可於液膜形成步驟中不進行預潤濕。 (3) In the example of FIG. 6 of the above embodiment, prewetting is performed in the liquid film forming step, but the present invention is not limited to this. Prewetting may not be performed in the liquid film forming step.
(4)於上述實施形態之圖6之例中，雖於液膜形成步驟中，對旋轉之基板W之上表面S1供給抗蝕劑液R1，但本發明不限定於此。亦可於液膜形成步驟中，對停止旋轉之基板W供給特定量之抗蝕劑液R1之後，藉由於停止抗蝕劑液R1之供給之狀態下使基板W旋轉而對基板W之上表面S1整體塗佈抗蝕劑液R1。 (4) In the example of FIG. 6 of the above embodiment, in the liquid film forming step, the resist liquid R1 is supplied to the upper surface S1 of the rotating substrate W, but the present invention is not limited to this. In the liquid film forming step, after a specific amount of resist liquid R1 is supplied to the substrate W that has stopped rotating, the upper surface of the substrate W can be formed by rotating the substrate W while stopping the supply of the resist liquid R1. S1 is coated entirely with resist liquid R1.
(5)於上述實施形態之塗佈處理裝置1中，雖為對基板W之下表面S2 供給清洗液而設置4個下表面噴嘴17，但本發明不限定於此。對基板W之下表面S2供給清洗液之下表面噴嘴17可為1個，可為2個，亦可為3個。或，下表面噴嘴17之數量亦可為5個以上。 (5) In the coating processing device 1 of the above embodiment, although the lower surface S2 of the substrate W is Four lower surface nozzles 17 are provided to supply the cleaning liquid, but the present invention is not limited to this. The number of lower surface nozzles 17 for supplying the cleaning liquid to the lower surface S2 of the substrate W may be one, two, or three. Alternatively, the number of lower surface nozzles 17 may be five or more.
(6)於上述實施形態之塗佈處理裝置1中，雖作為塗佈液對基板W供給抗蝕劑液R1，但本發明並非限定於此。於塗佈處理裝置1中，可將防反射膜用之塗佈液供給至基板W。或，於塗佈處理裝置1中，亦可將SOC(Spin On Carbon：旋塗碳)膜、SOG(Spin On Glass：旋塗玻璃)膜或SiARC(Si-rich Anti Reflective Coating：富矽防反射塗層)膜用之塗佈液供給至基板W。 (6) In the coating processing apparatus 1 of the above embodiment, the resist liquid R1 is supplied to the substrate W as the coating liquid, but the present invention is not limited to this. In the coating processing apparatus 1, the coating liquid for the anti-reflection film can be supplied to the substrate W. Alternatively, in the coating processing device 1, a SOC (Spin On Carbon) film, an SOG (Spin On Glass: spin on glass) film or a SiARC (Si-rich Anti Reflective Coating: silicon-rich anti-reflective coating) may be used. The coating liquid for the coating film is supplied to the substrate W.
(7)於上述實施形態中，雖將液膜乾燥步驟之中間時點規定為於液膜乾燥步驟之開始時點之後，基板W之中央區域上之抗蝕劑液R1乾燥且存在於圓環區域上之抗蝕劑液R1流動之狀態之期間內，但本發明不限定於此。液膜乾燥步驟之中間時點不限定於上述期間，只要規定於液膜乾燥步驟之開始時點之後且結束時點之前即可。 (7) In the above embodiment, although the intermediate time point of the liquid film drying step is defined as after the start time of the liquid film drying step, the resist liquid R1 on the central area of the substrate W is dried and exists on the annular area. During the period when the resist liquid R1 is flowing, the present invention is not limited thereto. The intermediate time point of the liquid film drying step is not limited to the above period, as long as it is specified after the start time point of the liquid film drying step and before the end time point.
[8]技術方案之各構成要件與實施形態之各要件之對應關係 [8] Correspondence between the constituent elements of the technical solution and the elements of the implementation form
以下，就技術方案之各構成要件與實施形態之各要件之對應之例進行說明。於上述實施形態中，抗蝕劑膜R2為塗佈膜之例，塗佈處理裝置1為塗佈處理裝置之例，上表面S1為第1面之例，下表面S2為第2面之例，邊緣部SR為凸部之例，旋轉保持裝置10為旋轉保持部之例，抗蝕劑液R1為塗佈液之例，液體供給裝置20為塗佈液供給部之例，控制部30為控制 部之例，且下表面噴嘴17及清洗液供給系統18為清洗液供給部之例。 Hereinafter, an example of correspondence between each component element of the technical solution and each element of the embodiment will be described. In the above embodiment, the resist film R2 is an example of a coating film, the coating processing device 1 is an example of a coating processing device, the upper surface S1 is an example of the first surface, and the lower surface S2 is an example of the second surface. , the edge part SR is an example of a convex part, the rotation holding device 10 is an example of a rotation holding part, the resist liquid R1 is an example of a coating liquid, the liquid supply device 20 is an example of a coating liquid supply part, and the control part 30 is control The lower surface nozzle 17 and the cleaning liquid supply system 18 are examples of the cleaning liquid supply section.
又，液膜乾燥步驟之開始時點(圖6之時點t8)為第1時點之例，液膜乾燥步驟之中間時點(圖6之時點t9)為第2時點之例，液膜乾燥步驟之結束時點(圖6之時點t10)為第3時點之例，液膜乾燥步驟之基板W之轉速s5為第1轉速之例，液膜乾燥步驟之基板W之轉速s6為第2轉速之例，背面清洗步驟之基板W之轉速s8為第3轉速之例。作為技術方案之各構成要件，亦可使用具有技術方案所記載之構成或功能之其他各種要件。 In addition, the starting time point of the liquid film drying step (time point t8 in Figure 6) is an example of the first time point, the middle time point of the liquid film drying step (time point t9 in Figure 6) is an example of the second time point, and the end of the liquid film drying step. The time point (time point t10 in Figure 6) is an example of the third time point, the rotation speed s5 of the substrate W in the liquid film drying step is an example of the first rotation speed, and the rotation speed s6 of the substrate W in the liquid film drying step is an example of the second rotation speed. The rotation speed s8 of the substrate W in the cleaning step is an example of the third rotation speed. As each constituent element of the technical solution, various other elements having the constitution or functions described in the technical solution can also be used.
p1:期間 p1:Period
p2:期間 p2:Period
R1:抗蝕劑液 R1: Resist liquid
R2:抗蝕劑膜 R2: Resist film
S1:上表面 S1: upper surface
s1~s6:轉速 s1~s6: speed
s8:轉速 s8: speed
t1~t11:時點 t1~t11: time point
W:基板 W: substrate
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