JP2012067387A - 電子装置とその作製方法およびスパッタリングターゲット - Google Patents
電子装置とその作製方法およびスパッタリングターゲット Download PDFInfo
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- JP2012067387A JP2012067387A JP2011183200A JP2011183200A JP2012067387A JP 2012067387 A JP2012067387 A JP 2012067387A JP 2011183200 A JP2011183200 A JP 2011183200A JP 2011183200 A JP2011183200 A JP 2011183200A JP 2012067387 A JP2012067387 A JP 2012067387A
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- oxide film
- oxide
- film
- semiconductor
- metal element
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
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Abstract
【解決手段】亜鉛のように400〜700℃で加熱した際にガリウムよりも揮発しやすい材料を酸化ガリウムに添加したターゲットを用いて、DCスパッタリング、パルスDCスパッタリング等の大きな基板に適用できる量産性の高いスパッタリング方法で成膜し、これを400〜700℃で加熱することにより、添加された材料を膜の表面近傍に偏析させる。膜のその他の部分は添加された材料の濃度が低下し、十分な絶縁性を呈するため、半導体装置のゲート絶縁物等に利用できる。
【選択図】図1
Description
本実施の形態では上記の技術思想を用いてトランジスタを有する表示装置を作製する例を示す。図1(A)乃至(F)に本実施の形態の表示装置の作製工程断面を示す。本実施の形態に示すトランジスタは、半導体として半導体性酸化物を用いるものであり、ゲート電極が基板側に位置するボトムゲート型で、かつ、ソース電極とドレイン電極がともに半導体層の上面にコンタクトするトップコンタクト型である。
本実施の形態では実施の形態1で示したトランジスタとは異なる構造のトランジスタを有する表示装置を作製する例を示す。図2(A)乃至(F)に本実施の形態の表示装置の作製工程断面を示す。本実施の形態に示すトランジスタは、半導体として半導体性酸化物を用いるものであり、ボトムゲート型である。また、ソース電極とドレイン電極はともに半導体層の下面にコンタクトするボトムコンタクト型である。
本実施の形態では上記の実施の形態で示したトランジスタとは異なる構造のトランジスタを有する表示装置を作製する例を示す。図3(A)乃至(F)に本実施の形態の表示装置の作製工程断面を示す。本実施の形態に示すトランジスタは、半導体として半導体性酸化物を用いるものであり、ゲートが半導体層の上に形成されるトップゲート型である。また、ソース電極とドレイン電極はともに半導体層の上面にコンタクトするトップコンタクト型である。
本実施の形態では実施の形態3で示したトランジスタと同様にトップゲート型であるが、ソース電極とドレイン電極はともに半導体層の下面にコンタクトするボトムコンタクト型のトランジスタを有する表示装置を作製する例を示す。図4(A)乃至(F)に本実施の形態の表示装置の作製工程断面を示す。
本実施の形態では、上記の実施の形態で示したトランジスタとは異なるトランジスタを有する表示装置の例を示す。図5(A)に示すトランジスタは、半導体層の上下に2つのゲート電極を有するデュアルゲート構造のトランジスタの一つである。
本実施の形態では、実施の形態5で示したデュアルゲート構造のトランジスタとは異なるデュアルゲート構造を有するトランジスタを有する表示装置の例を図5(B)に示す。この表示装置は、絶縁表面を有する基板101上に、第1のゲート電極102、第1のゲート絶縁物103、ガリウムを主たる金属元素とする絶縁性酸化物層104b、ソース電極107a、ドレイン電極107b、半導体性酸化物膜105a、第2のゲート絶縁物112、第2のゲート電極113を有する。
実施の形態1では、酸化物膜104を熱処理して得られる半導体性酸化物層104aを除去したが、本実施の形態では、それを残したまま半導体として用いる例を示す。図6(A)乃至(E)に本実施の形態の半導体装置の作製工程断面を示す。本実施の形態に示すトランジスタは、実施の形態1と同様、ボトムゲートトップコンタクト型である。特に断らない限り、本実施の形態で用いる構成物に関しては、実施の形態1を参照すればよい。
実施の形態7では、ボトムゲート型のトランジスタを有する表示装置の例を示したが、本実施の形態ではトップゲート型のトランジスタを有する表示装置について説明する。図7(A)乃至(E)に本実施の形態の半導体装置の作製工程断面を示す。本実施の形態に示すトランジスタは、実施の形態3と同様、トップゲートトップコンタクト型である。特に断らない限り、本実施の形態で用いる構成物に関しては、実施の形態1あるいは3を参照すればよい。
実施の形態1乃至8に開示する表示装置は、さまざまな電子機器(遊技機も含む)に適用することができる。電子機器としては、例えば、テレビジョン装置(テレビ、またはテレビジョン受信機ともいう)、コンピュータ用などのモニタ、デジタルカメラ、デジタルビデオカメラ等のカメラ、デジタルフォトフレーム、携帯電話機(携帯電話、携帯電話装置ともいう)、携帯型ゲーム機、携帯情報端末、音響再生装置、パチンコ機などの大型ゲーム機などが挙げられる。
102 ゲート電極
103 第1のゲート絶縁物
104 酸化物膜
104a 半導体性酸化物層
104b 絶縁性酸化物層
105 半導体性酸化物膜
105a 半導体性酸化物膜
106 N型半導体性酸化物膜
106a N型半導体性酸化物膜
106b N型半導体性酸化物膜
107 導電膜
107a ソース電極
107b ドレイン電極
108 絶縁物
109 絶縁物
110 表示用電極
111 酸化物膜
111a 半導体性酸化物層
111b 絶縁性酸化物層
112 ゲート絶縁物
113 ゲート電極
Claims (13)
- 少なくとも第1の金属元素と第2の金属元素を有する酸化物よりなるターゲットを用いてACスパッタリング法もしくはDCスパッタリング法により酸化物膜を形成する工程と、
前記酸化物膜を加熱処理する工程と、
前記酸化物膜の表面をエッチングして、絶縁性酸化物膜を得る工程と
を有し、
前記絶縁性酸化物膜中の第1の金属元素の濃度は前記ターゲット中の第1の金属元素の濃度の50%以下であることを特徴とする電子装置の作製方法。 - 少なくとも第1の金属元素と第2の金属元素を有する酸化物よりなるターゲットを用いてACスパッタリング法もしくはDCスパッタリング法により酸化物膜を形成する工程と、
前記酸化物膜を加熱処理する工程と、
前記酸化物膜の表面をエッチングして、絶縁性酸化物膜を得る工程と
を有し、
前記ターゲットの導電率は、前記絶縁性酸化物膜の導電率よりも高いことを特徴とする電子装置の作製方法。 - 少なくとも第1の金属元素と第2の金属元素を有する酸化物よりなるターゲットを用いてACスパッタリング法もしくはDCスパッタリング法により酸化物膜を形成する工程と、
前記酸化物膜を加熱処理することによって前記酸化物中の第1の金属元素の濃度を低下させて絶縁性酸化物膜を得る工程と
を有することを特徴とする電子装置の作製方法。 - 請求項1乃至3において、前記絶縁性酸化物膜に接して半導体性酸化物膜が設けられることを特徴とする電子装置の作製方法。
- 少なくとも第1の金属元素と第2の金属元素を有する酸化物よりなるターゲットを用いてACスパッタリング法もしくはDCスパッタリング法により酸化物膜を形成する工程と、
前記酸化物膜を加熱処理することにより、第1の金属元素の濃度の高い領域を形成する工程と、
前記酸化物膜に接して半導体性酸化物膜を形成する工程と
を有し、
前記半導体性酸化物膜における金属元素に対する第2の金属元素の比率は0.2以上であることを特徴とする電子装置の作製方法。 - 基板と、
前記基板上の酸化物膜と、
前記酸化物膜上に接して設けられた半導体性酸化物膜と、
を有し、
前記酸化物膜は少なくとも第1の金属元素と第2の金属元素を有し、
前記酸化物膜における第1の金属元素の濃度は、前記基板に面する部分よりも、前記半導体性酸化物膜に接する部分の方が高く、
前記酸化物膜における第2の金属元素の濃度は、前記基板に面する部分よりも、前記半導体性酸化物膜に接する部分の方が低いことを特徴とする電子装置。 - 請求項6において、前記半導体性酸化物膜はアモルファス状態を有することを特徴とする電子装置。
- 請求項6において、前記半導体性酸化物膜は単結晶状態であることを特徴とする電子装置。
- 請求項7において、前記半導体性酸化物膜は結晶を有することを特徴とする電子装置。
- 請求項8あるいは9において、前記半導体性酸化物膜はc軸配向した結晶を有することを特徴とする電子装置。
- 少なくとも第1の金属元素と第2の金属元素を有する導電性酸化物よりなる、ACスパッタリング法もしくはDCスパッタリング法により成膜する装置に用いられるスパッタリングターゲットであり、
第2の金属元素の酸化物は絶縁性酸化物であることを特徴とするスパッタリングターゲット。 - 請求項11において、前記第1の金属元素は亜鉛であることを特徴とするスパッタリングターゲット。
- 請求項11および12のいずれかにおいて、前記第2の金属元素はガリウムであることを特徴とするスパッタリングターゲット。
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TW201229269A (en) | 2012-07-16 |
CN102386071B (zh) | 2016-03-30 |
TWI567215B (zh) | 2017-01-21 |
JP6148311B2 (ja) | 2017-06-14 |
US20150041808A1 (en) | 2015-02-12 |
US9640668B2 (en) | 2017-05-02 |
JP2016058744A (ja) | 2016-04-21 |
US8883555B2 (en) | 2014-11-11 |
JP5838059B2 (ja) | 2015-12-24 |
US20120049183A1 (en) | 2012-03-01 |
KR20120035848A (ko) | 2012-04-16 |
CN102386071A (zh) | 2012-03-21 |
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