JP2012064956A - 半導体素子 - Google Patents
半導体素子 Download PDFInfo
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- JP2012064956A JP2012064956A JP2011233241A JP2011233241A JP2012064956A JP 2012064956 A JP2012064956 A JP 2012064956A JP 2011233241 A JP2011233241 A JP 2011233241A JP 2011233241 A JP2011233241 A JP 2011233241A JP 2012064956 A JP2012064956 A JP 2012064956A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 171
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims abstract description 187
- 150000001875 compounds Chemical class 0.000 claims abstract description 62
- 239000000758 substrate Substances 0.000 claims abstract description 58
- 150000004767 nitrides Chemical class 0.000 claims abstract description 57
- 239000013078 crystal Substances 0.000 claims abstract description 51
- 239000012535 impurity Substances 0.000 claims description 43
- 239000010410 layer Substances 0.000 description 391
- 229910002601 GaN Inorganic materials 0.000 description 117
- 238000005253 cladding Methods 0.000 description 42
- 238000000034 method Methods 0.000 description 36
- 239000010931 gold Substances 0.000 description 30
- 238000004519 manufacturing process Methods 0.000 description 28
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 28
- 239000011777 magnesium Substances 0.000 description 20
- 239000010936 titanium Substances 0.000 description 17
- 239000002131 composite material Substances 0.000 description 16
- 230000000694 effects Effects 0.000 description 12
- 230000008569 process Effects 0.000 description 12
- 230000014509 gene expression Effects 0.000 description 10
- 229920002120 photoresistant polymer Polymers 0.000 description 10
- 230000002265 prevention Effects 0.000 description 9
- 230000004888 barrier function Effects 0.000 description 8
- 230000007547 defect Effects 0.000 description 8
- 230000003287 optical effect Effects 0.000 description 8
- 235000012431 wafers Nutrition 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 230000000903 blocking effect Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 230000004048 modification Effects 0.000 description 6
- 238000012986 modification Methods 0.000 description 6
- 238000002441 X-ray diffraction Methods 0.000 description 5
- 229910052737 gold Inorganic materials 0.000 description 5
- FHUGMWWUMCDXBC-UHFFFAOYSA-N gold platinum titanium Chemical compound [Ti][Pt][Au] FHUGMWWUMCDXBC-UHFFFAOYSA-N 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 125000002524 organometallic group Chemical group 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 238000005245 sintering Methods 0.000 description 4
- 238000001228 spectrum Methods 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 3
- 238000005336 cracking Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 229910002704 AlGaN Inorganic materials 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 235000005811 Viola adunca Nutrition 0.000 description 2
- 240000009038 Viola odorata Species 0.000 description 2
- 235000013487 Viola odorata Nutrition 0.000 description 2
- 235000002254 Viola papilionacea Nutrition 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000003321 amplification Effects 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 230000001737 promoting effect Effects 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 2
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 2
- 238000007738 vacuum evaporation Methods 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000005587 bubbling Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- QBJCZLXULXFYCK-UHFFFAOYSA-N magnesium;cyclopenta-1,3-diene Chemical compound [Mg+2].C1C=CC=[C-]1.C1C=CC=[C-]1 QBJCZLXULXFYCK-UHFFFAOYSA-N 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- CZDYPVPMEAXLPK-UHFFFAOYSA-N tetramethylsilane Chemical compound C[Si](C)(C)C CZDYPVPMEAXLPK-UHFFFAOYSA-N 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- VOITXYVAKOUIBA-UHFFFAOYSA-N triethylaluminium Chemical compound CC[Al](CC)CC VOITXYVAKOUIBA-UHFFFAOYSA-N 0.000 description 1
- OTRPZROOJRIMKW-UHFFFAOYSA-N triethylindigane Chemical compound CC[In](CC)CC OTRPZROOJRIMKW-UHFFFAOYSA-N 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Classifications
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
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- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
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- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
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- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
- C30B25/20—Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer
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- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
- C30B29/406—Gallium nitride
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Abstract
【解決手段】n型基板11と、n型基板11上に積層された窒化物系III−V族化合物半導体単結晶からなるn型ドリフト層24と、n型ドリフト層24上に設けられた窒化物系III−V族化合物からなるp型ベース層25と、p型ベース層25上に設けられた窒化物系III−V族化合物からなるn型エミッタ層26と、n型基板11とn型ドリフト層24との間に設けられた、Siを5x1017cm-3以上2x1019cm-3以下含有する層とを備える。
【選択図】 図15
Description
本発明の第1の実施の形態に係る半導体素子は、図1に示すように、n型GaN基板11上に、シリコン(Si)等のn型不純物がドープされたn型GaN層12が積層された積層基体(11,12)を基礎としている。なお、n型GaN層12は、例示であり、より、一般的には、InxGa1-x-yAlyN層等の他の窒化物系III−V族化合物半導体のn型単結晶層でも良い。n型GaN基板11は、{0001}面から<1-100>方向へのオフ角度Δθ1-100の絶対値、及び{0001}面から<11-20>方向へのオフ角度Δθ11-20の絶対値がそれぞれ,
の面方位を有している。この積層基体(11,12)上に、レーザダイオードの素子構造部が形成される。第1の実施の形態では、積層体(11,12)を、エピタキシャル成長基板(11,12)と呼び、更にこの上に素子構造部を連続エピタキシャル成長する。
本発明の第2の実施の形態に係る半導体素子は、図13に示すように、オフ角度Δθ1-100及びΔθ11-20が式(1)及び(2)の関係を満たすn型GaN基板11上に、n型GaN層12が積層された積層基体(11,12)を基礎としている点では、第1の実施の形態に係る半導体素子と同様であるが、第2の実施の形態に係る半導体素子では、この積層基体(11,12)上に、発光ダイオード(LED)の素子構造部が形成される。第1の実施の形態で説明したように、n型GaN層12は、例示であり、より、一般的には、InxGa1-x-yAlyN層等の他の窒化物系III−V族化合物半導体のn型単結晶層でも良いことは勿論である。
本発明の第3の実施の形態に係る半導体素子は、図15に示すように、オフ角度Δθ1-100及びΔθ11-20が式(1)及び(2)の関係を満たすn型GaN基板11上に、Siド−プGaN層からなるn型ドリフト層24、Mgド−プInxGa1-xN層からなるp型ベース層25、Siド−プ層からなるn型エミッタ層26が順に積層されてヘテロ接合バイポーラトランジスタ(HBT)を構成している。n型GaN基板11は、コレクタ層(コレクタコンタクト層)として機能する。
上記のように、本発明は第1〜第3の実施の形態によって記載したが、この開示の一部をなす論述及び図面は本発明を限定するものであると理解すべきではない。この開示から当業者には様々な代替実施の形態、実施例及び運用技術が明らかとなろう。
11…n型GaN基板
12…n型GaN層
13…n型クラッド層
14…n型GaNガイド層
15…発光層(活性層)
16…p型GaN第1ガイド層
17…オーバーフロー防止層
18…p型GaN第2ガイド層
19…p型クラッド層
20…p型GaNコンタクト層
21…発光層(活性層)
24…n型ドリフト層
25…p型ベース層
26…n型エミッタ層
31…n側電極
32…p側電極
33…p側電極
41…絶縁膜
42…パッシベーション膜
43…コレクタ電極
44…ベース電極
45…エミッタ電極
50a,50b…溝部
51…フォトレジスト
61…GaN基板
62…ノンドープGaN層(第1の単結晶層)
63…ノンドープAlxGa1-xN層(第2の単結晶層)
64…二次元電子雲
65…n型ソース領域
66…n型ドレイン領域
71…ソース電極
72…ドレイン電極
73…ゲート電極(ショットキ・バリア・ゲート)
Claims (11)
- n型基板と、
該n型基板上に積層された窒化物系III−V族化合物半導体単結晶からなるn型ドリフト層と、
該n型ドリフト層上に設けられた窒化物系III−V族化合物からなるp型ベース層と、
該p型ベース層上に設けられた窒化物系III−V族化合物からなるn型エミッタ層と、
前記n型基板と前記n型ドリフト層との間に設けられた、不純物元素としてSiを5x1017cm-3以上2x1019cm-3以下含有する、不純物元素を含有する層と
を備えることを特徴とする半導体素子。 - 前記n型エミッタ層は、前記p型ベース層より禁制帯幅の広い窒化物系III−V族化合物からなることを特徴とする請求項1に記載の半導体素子。
- 前記n型基板はn型GaN基板であることを特徴とする請求項1又は2に記載の半導体素子。
- 基板と、
該基板上に積層された窒化物系III−V族化合物半導体単結晶からなる電子走行層と、
該電子走行層上に設けられ、該電子走行層より禁制帯幅の広い窒化物系III−V族化合物からなるn型電子供給層と、
前記基板と前記電子走行層との間に設けられた、不純物元素としてSiを5x1017cm-3以上2x1019cm-3以下含有する、不純物元素を含有する層と
を備えることを特徴とする半導体素子。 - 前記n型電子供給層の一部を貫通して、前記電子走行層まで到達する窒化物系III−V族化合物半導体からなるn型ソース領域と、
該n型ソース領域から離間して、前記n型電子供給層の他の一部を貫通して、前記電子走行層まで到達する窒化物系III−V族化合物半導体からなるn型ドレイン領域と、
を更に備えることを特徴とする請求項4に記載の半導体素子。 - 前記基板はn型GaN基板であることを特徴とする請求項4又は5に記載の半導体素子。
- 前記不純物元素を含有する層は、前記不純物元素を1x1018cm-3以上2x1019cm-3以下含有することを特徴とする請求項1乃至6のいずれか1項に記載の半導体素子。
- 前記不純物元素を含有する層は、前記不純物元素を4x1018cm-3以上2x1019cm-3以下含有することを特徴とする請求項1乃至7のいずれか1項に記載の半導体素子。
- 前記不純物元素を含有する層の厚さは、0.3nm以上、200nm以下であることを特徴とする請求項1乃至8のいずれか1項に記載の半導体素子。
- 前記不純物元素を含有する層の厚さは、0.3nm以上、150nm以下であることを特徴とする請求項1乃至9のいずれか1項に記載の半導体素子。
- 前記不純物元素を含有する層の厚さは、5nm以上、150nm以下であることを特徴とする請求項1乃至10のいずれか1項に記載の半導体素子。
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CN100449800C (zh) | 2009-01-07 |
EP1630878B1 (en) | 2017-10-18 |
JP2012209561A (ja) | 2012-10-25 |
KR100813756B1 (ko) | 2008-03-13 |
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US7531397B2 (en) | 2009-05-12 |
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JP4892103B2 (ja) | 2012-03-07 |
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US7339255B2 (en) | 2008-03-04 |
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