EP1630878A3 - GaN semiconductor substrate and semiconductor device manufactured by epitaxial growth on the GaN semiconductor substrate - Google Patents
GaN semiconductor substrate and semiconductor device manufactured by epitaxial growth on the GaN semiconductor substrate Download PDFInfo
- Publication number
- EP1630878A3 EP1630878A3 EP05255182A EP05255182A EP1630878A3 EP 1630878 A3 EP1630878 A3 EP 1630878A3 EP 05255182 A EP05255182 A EP 05255182A EP 05255182 A EP05255182 A EP 05255182A EP 1630878 A3 EP1630878 A3 EP 1630878A3
- Authority
- EP
- European Patent Office
- Prior art keywords
- semiconductor substrate
- gan semiconductor
- gan
- degree
- epitaxial growth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 5
- 239000000758 substrate Substances 0.000 title abstract 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 abstract 5
- 239000013078 crystal Substances 0.000 abstract 1
- -1 nitride compound Chemical class 0.000 abstract 1
Classifications
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
- C30B25/20—Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
- C30B29/406—Gallium nitride
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- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
- H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
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- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
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- H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
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- H01L29/2003—Nitride compounds
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/3202—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth
- H01S5/320275—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth semi-polar orientation
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
- H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
- Bipolar Transistors (AREA)
- Junction Field-Effect Transistors (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Recrystallisation Techniques (AREA)
Abstract
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004244072 | 2004-08-24 |
Publications (3)
Publication Number | Publication Date |
---|---|
EP1630878A2 EP1630878A2 (en) | 2006-03-01 |
EP1630878A3 true EP1630878A3 (en) | 2011-05-04 |
EP1630878B1 EP1630878B1 (en) | 2017-10-18 |
Family
ID=34981680
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP05255182.7A Active EP1630878B1 (en) | 2004-08-24 | 2005-08-23 | GaN semiconductor substrate and semiconductor device manufactured by epitaxial growth on the GaN semiconductor substrate |
Country Status (6)
Country | Link |
---|---|
US (2) | US7339255B2 (en) |
EP (1) | EP1630878B1 (en) |
JP (5) | JP4892103B2 (en) |
KR (1) | KR100813756B1 (en) |
CN (1) | CN100449800C (en) |
TW (1) | TWI287256B (en) |
Families Citing this family (42)
Publication number | Priority date | Publication date | Assignee | Title |
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US8368183B2 (en) * | 2004-11-02 | 2013-02-05 | Sharp Kabushiki Kaisha | Nitride semiconductor device |
CN101147303B (en) * | 2005-03-31 | 2010-05-19 | 三洋电机株式会社 | Gallium nitride compound semiconductor laser element and manufacturing method therefor |
JP2007012729A (en) * | 2005-06-29 | 2007-01-18 | Toshiba Corp | Gallium nitride semiconductor laser device |
TWI256157B (en) * | 2005-09-22 | 2006-06-01 | Epitech Technology Corp | Method for manufacturing light-emitting diode |
JP2007095858A (en) * | 2005-09-28 | 2007-04-12 | Toshiba Ceramics Co Ltd | Substrate for compound semiconductor device, and compound semiconductor device using it |
JP5265090B2 (en) * | 2006-04-14 | 2013-08-14 | 豊田合成株式会社 | Semiconductor light emitting device and lamp |
JP2008042131A (en) * | 2006-08-10 | 2008-02-21 | Opnext Japan Inc | Semiconductor optical element, and manufacturing method thereof |
JP2009123718A (en) * | 2007-01-16 | 2009-06-04 | Showa Denko Kk | Group iii nitride compound semiconductor element and its manufacturing method, group iii nitride compound semiconductor light-emitting element and its manufacturing method, and lamp |
JP2008182069A (en) * | 2007-01-25 | 2008-08-07 | Toshiba Corp | Semiconductor light-emitting element |
JP5032171B2 (en) * | 2007-03-26 | 2012-09-26 | 株式会社東芝 | Semiconductor light emitting device, method for manufacturing the same, and light emitting device |
EP2003696B1 (en) * | 2007-06-14 | 2012-02-29 | Sumitomo Electric Industries, Ltd. | GaN substrate, substrate with epitaxial layer, semiconductor device and method of manufacturing GaN substrate |
JP4341702B2 (en) * | 2007-06-21 | 2009-10-07 | 住友電気工業株式会社 | Group III nitride semiconductor light emitting device |
US7711212B2 (en) * | 2007-09-21 | 2010-05-04 | International Business Machines Corporation | Junction field effect transistor geometry for optical modulators |
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JP5707772B2 (en) * | 2010-08-06 | 2015-04-30 | 日亜化学工業株式会社 | Nitride semiconductor laser device and manufacturing method thereof |
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US8669585B1 (en) | 2011-09-03 | 2014-03-11 | Toshiba Techno Center Inc. | LED that has bounding silicon-doped regions on either side of a strain release layer |
KR101978536B1 (en) | 2011-09-30 | 2019-05-14 | 쌩-고벵 크리스톡스 에 드테끄퇴르 | Group iii-v substrate material with particular crystallographic features and methods of making |
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WO2014050740A1 (en) * | 2012-09-28 | 2014-04-03 | シャープ株式会社 | Switching element |
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