JP2012005009A - 半導体装置、スナバデバイス - Google Patents
半導体装置、スナバデバイス Download PDFInfo
- Publication number
- JP2012005009A JP2012005009A JP2010140192A JP2010140192A JP2012005009A JP 2012005009 A JP2012005009 A JP 2012005009A JP 2010140192 A JP2010140192 A JP 2010140192A JP 2010140192 A JP2010140192 A JP 2010140192A JP 2012005009 A JP2012005009 A JP 2012005009A
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- Prior art keywords
- sic
- mosfet
- terminal
- snubber
- switching transistor
- Prior art date
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 26
- 238000011084 recovery Methods 0.000 claims abstract description 21
- 239000000758 substrate Substances 0.000 claims abstract description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 4
- 229920005591 polysilicon Polymers 0.000 claims description 4
- 230000017525 heat dissipation Effects 0.000 abstract description 4
- 238000010586 diagram Methods 0.000 description 25
- 230000000694 effects Effects 0.000 description 10
- 238000001816 cooling Methods 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
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- H03K17/08148—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the output circuit in composite switches
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Abstract
【解決手段】本発明の半導体装置は、スイッチングトランジスタ1と、スイッチングトランジスタ1と同一導電性基板(フレーム)上に実装されるリカバリーダイオード2及びスナバデバイス6とを備える。スナバデバイス6は、スイッチングトランジスタ1の出力端子C−基準端子E間に接続されたSiC−MOSFET3と、SiC−MOSFET3のゲート端子G−ドレイン端子D間に形成されたツェナーダイオード4と、SiC−MOSFET3のゲート端子G−ソース端子S間に形成された抵抗器5とを備える。スイッチングトランジスタ1の基準端子E、SiC−MOSFET3のソース端子、リカバリーダイオード2のアノード端子が共通接続される。
【選択図】図3
Description
本実施の形態の半導体装置の一例としてスイッチングモジュールの回路図を図1に示す。スイッチングモジュールは、主スイッチング素子であるIGBT1と、IGBT1のコレクタC−エミッタE間に接続されたリカバリーダイオード2と、サージ電圧を吸収するスナバデバイス6とを備えている。スナバデバイス6は、IGBT1のコレクタC−エミッタE間に接続されたSiC−MOSFET3と、SiC−MOSFET3のドレインD−ゲートG間に接続されたツェナーダイオード4と、ゲートG−ソースS間に接続された抵抗器5とを備えている。SiC−MOSFET3は例えばNチャネルのエンハンスメント型が用いられる。ツェナーダイオード4と抵抗器5はいずれもポリシリコンで形成される。
実施の形態1の半導体装置によれば以下の効果を奏する。本実施の形態の半導体装置はスイッチングトランジスタ1と、スイッチングトランジスタ1と同一リードフレーム上に実装されるリカバリーダイオード2及びスナバデバイス6とを備え、スナバデバイス6は、スイッチングトランジスタ(IGBT1)の出力端子(コレクタ端子C)−基準端子(エミッタ端子E)間に接続されたSiC−MOSFET3と、SiC−MOSFET3のゲート端子G−ドレイン端子D間に形成されたツェナーダイオード4と、SiC−MOSFET3のゲート端子G−ソース端子S間に形成された抵抗器5とを備え、スイッチングトランジスタ1のエミッタ端子E、SiC−MOSFET3のソース端子、リカバリーダイオードのアノード端子が共通接続される。これにより、スナバデバイス6の放熱系をスイッチングトランジスタ1の放熱系に一元化することができ、システム全体の小型化を図ることが出来る。また、同一リードフレーム上でスイッチングトランジスタ1の直近にスナバデバイス6を配置することによって、寄生インダクタンスを最小化し保護性能を最大限に引き出すことが出来る。
実施の形態1では、アクティブクランプに必要なツェナーダイオード4と抵抗器5をSiC−MOSFET3と同一チップ(スナバデバイス6)上に形成した。しかし、サージエネルギーを負担するSiC−MOSFET3は高温動作が可能なSiCデバイスである一方、ツェナーダイオード4と抵抗器5はポリシリコンで形成されているため、高温動作で性能が低下しボトルネックとなってしまう。
実施の形態3の半導体装置によれば、以下の効果を奏する。すなわち、本実施の形態の半導体装置では、ポリシリコンで形成されたツェナーダイオード4と抵抗器5をSiC−MOSFET3とは別のチップに形成することによって、高温動作でのボトルネックを解消しより大きなサージエネルギーに対して保護性能を発揮するようにした。
実施の形態2の構成では、アクティブクランプ動作に必要なツェナーダイオード4と抵抗器5を得るために専用の半導体デバイス(第2スナバデバイス6b)を必要とした。実施の形態3ではIGBT1をシリコンデバイスとし、IGBT1と同一デバイス(スイッチングデバイス7)上にツェナーダイオード4及び抵抗器5を形成することによって、チップ数と配線数を削減しコストダウンを図る。
実施の形態3の半導体装置によれば以下の効果を奏する。すなわち、本実施の形態の半導体装置においてIGBT1はSi基板で形成され、ツェナーダイオード4と抵抗器5をIGBT1と同一デバイス(スイッチングデバイス)上に形成することにより、高温動作によるボトルネックを解消すると共に、チップ数と配線数を削減してコストダウンが可能である。
実施の形態4の半導体装置の一例としてスイッチングモジュールの回路図を図11に、構成図を図12にそれぞれ示す。これらの図において、実施の形態1と同一の構成要素には同一の参照符号を付している。SiC−MOSFET3のボディダイオード11をIGBT1のリカバリーダイオードとして利用する点が、実施の形態1とは異なる。
実施の形態4の半導体装置では、SiC−MOSFET3のボディダイオードをIGBT1のリカバリーダイオードとして用いることにより、リカバリーダイオードを削減し低コスト化が実現できる。
本実施の形態のスナバデバイスの回路図を図13に、構成図を図14にそれぞれ示す。スナバデバイスの回路構成は実施の形態1のスイッチングモジュールにおけるスナバデバイスと同様であるが、図14に示すようにスナバデバイス6のみを単一パッケージとしたものである。実施の形態1と同一の構成要素には同一の参照番号を付している。リードフレーム上にスナバデバイス6が実装され、SiC−MOSFET3のドレイン端子Dとソース端子Sがパッケージの外部に露出される。
本実施の形態のスナバデバイスによれば以下の効果を奏する。すなわち、実施の形態5のスナバデバイス6は、スイッチングトランジスタのサージ電圧を吸収するスナバデバイスであって、SiC−MOSFET3と、SiC−MOSFET3のゲート端子G−ドレイン端子D間に形成されたツェナーダイオード4と、SiC−MOSFET3のゲート端子G−ソース端子S間に形成された抵抗器5とを備える。このようなスナバデバイス6を複数のスイッチング素子からなるインバーターモジュールに一括して接続することにより、スナバデバイスの個数を減らしてコストを削減することが出来る。
Claims (7)
- スイッチングトランジスタと、
前記スイッチングトランジスタと同一導電性基板上に実装されるリカバリーダイオード及びスナバデバイスと
を備え、
前記スナバデバイスは、
前記スイッチングトランジスタの出力端子−基準端子間に接続されたSiC−MOSFETと、
前記SiC−MOSFETのゲート端子−ドレイン端子間に接続されたツェナーダイオードと、
前記SiC−MOSFETのゲート端子−ソース端子間に接続された抵抗器と
を備え、
前記スイッチングトランジスタの基準端子、前記SiC−MOSFETのソース端子、前記リカバリーダイオードのアノード端子が共通接続される、半導体装置。 - 前記ツェナーダイオードと前記抵抗器は前記SiC−MOSFETと同一のチップに形成される、請求項1に記載の半導体装置。
- 前記ツェナーダイオードと前記抵抗器はポリシリコンから形成され、前記SiC−MOSFETとは別のチップに形成される、請求項1に記載の半導体装置。
- 前記スイッチングトランジスタはSi基板で形成され、
前記ツェナーダイオードと前記抵抗器は前記スイッチングトランジスタ上に形成される、請求項1に記載の半導体装置。 - 前記リカバリーダイオードは前記SiC−MOSFETのボディダイオードである、請求項1〜4のいずれかに記載の半導体装置。
- スイッチングトランジスタのサージ電圧を吸収するスナバデバイスであって、
SiC−MOSFETと、
前記SiC−MOSFETのゲート端子−ドレイン端子間に接続されたツェナーダイオードと、
前記SiC−MOSFETのゲート端子−ソース端子間に接続された抵抗器と
を備えるスナバデバイス。 - 複数のスイッチングトランジスタからなるインバーター回路のサージ電圧を吸収するスナバデバイスであって、
前記インバーター回路に対して単一の、請求項6に記載のスナバデバイスが並列に接続されるスナバデバイス。
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