JP2011521874A - 直接シリコン鋳造又は直接反応金属鋳造 - Google Patents

直接シリコン鋳造又は直接反応金属鋳造 Download PDF

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JP2011521874A
JP2011521874A JP2011510685A JP2011510685A JP2011521874A JP 2011521874 A JP2011521874 A JP 2011521874A JP 2011510685 A JP2011510685 A JP 2011510685A JP 2011510685 A JP2011510685 A JP 2011510685A JP 2011521874 A JP2011521874 A JP 2011521874A
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silicon
casting
reactor chamber
containing gas
liquid
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JP2011521874A5 (enExample
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ヒューゴ フランツ
ジェイ レイス ロナルド
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アールイーシー シリコン インコーポレイテッド
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
JP2011510685A 2008-05-23 2009-05-20 直接シリコン鋳造又は直接反応金属鋳造 Pending JP2011521874A (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US12884708P 2008-05-23 2008-05-23
US61/128,847 2008-05-23
US12/378,243 US20090289390A1 (en) 2008-05-23 2009-02-11 Direct silicon or reactive metal casting
US12/378,243 2009-02-11
PCT/US2009/044704 WO2009143264A2 (en) 2008-05-23 2009-05-20 Direct silicon or reactive metal casting

Publications (2)

Publication Number Publication Date
JP2011521874A true JP2011521874A (ja) 2011-07-28
JP2011521874A5 JP2011521874A5 (enExample) 2012-06-07

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JP2011510685A Pending JP2011521874A (ja) 2008-05-23 2009-05-20 直接シリコン鋳造又は直接反応金属鋳造

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US (1) US20090289390A1 (enExample)
EP (1) EP2291552A4 (enExample)
JP (1) JP2011521874A (enExample)
KR (1) KR20110030482A (enExample)
CN (1) CN102084038B (enExample)
CA (1) CA2725104A1 (enExample)
TW (1) TW201009139A (enExample)
WO (1) WO2009143264A2 (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
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JP2013523595A (ja) * 2010-04-13 2013-06-17 シュミット シリコン テクノロジー ゲゼルシャフト ミット ベシュレンクテル ハフツング 結晶半導体材料の製造方法
KR20220031660A (ko) * 2019-07-04 2022-03-11 슈미트 실리콘 테크놀로지 게엠베하 액체 실리콘을 제조하기 위한 장치 및 방법
KR20220038730A (ko) * 2019-08-08 2022-03-29 슈미트 실리콘 테크놀로지 게엠베하 실리콘 함유 재료의 제조 방법 및 장치

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US20100189926A1 (en) * 2006-04-14 2010-07-29 Deluca Charles Plasma deposition apparatus and method for making high purity silicon
US20100047148A1 (en) * 2008-05-23 2010-02-25 Rec Silicon, Inc. Skull reactor
CN102498062A (zh) * 2009-04-29 2012-06-13 卡利太阳能有限公司 升级冶金级硅材料提纯的过程控制
WO2011079485A1 (zh) * 2009-12-31 2011-07-07 江苏中能硅业科技发展有限公司 硅单质的生产方法及生产设备
DE102010011853A1 (de) * 2010-03-09 2011-09-15 Schmid Silicon Technology Gmbh Verfahren zur Herstellung von hochreinem Silizium
EP2558232B1 (de) * 2010-04-13 2017-07-12 Schmid Silicon Technology GmbH Herstellung von monokristallinen halbleiterwerkstoffen
DE102010021004A1 (de) * 2010-05-14 2011-11-17 Schmid Silicon Technology Gmbh Herstellung von monokristallinen Halbleiterwerkstoffen
DE102010045040A1 (de) * 2010-09-10 2012-03-15 Centrotherm Sitec Gmbh Verfahren und Vorrichtung zum Herstellen von Silizium
US20120082610A1 (en) * 2010-10-02 2012-04-05 Channon Matthew J Fluorspar/Iodide process for reduction,purificatioin, and crystallization of silicon
KR101339481B1 (ko) * 2011-08-05 2013-12-10 주식회사 글로실 단결정 실리콘 웨이퍼 원료 제조를 위한 다결정 실리콘 로드 제조방법
CN104583122B (zh) * 2012-08-29 2017-09-05 赫姆洛克半导体运营有限责任公司 锥形流化床反应器及其使用方法
CN103626184B (zh) * 2013-07-31 2016-02-24 浙江精功新材料技术有限公司 一种高纯液体多晶硅的制备方法
CN106365169A (zh) * 2016-08-24 2017-02-01 上海交通大学 一种由硅烷直接铸造多晶硅锭的设备及方法
CN106319618A (zh) * 2016-09-22 2017-01-11 上海交通大学 一种由硅烷制造直拉单晶硅棒的设备及方法
CN112893789B (zh) * 2021-01-15 2022-08-30 台州学院 一种用于生产半导体材料箔的装置及方法
CN113415805B (zh) * 2021-06-16 2022-03-29 何良雨 一种激光维持等离子体制备多晶硅的方法及系统
EP4479582A1 (en) * 2022-02-15 2024-12-25 Lau Superconductors Inc. Manufacture and repair of high temperature reinforced superconductors

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Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013523595A (ja) * 2010-04-13 2013-06-17 シュミット シリコン テクノロジー ゲゼルシャフト ミット ベシュレンクテル ハフツング 結晶半導体材料の製造方法
KR20220031660A (ko) * 2019-07-04 2022-03-11 슈미트 실리콘 테크놀로지 게엠베하 액체 실리콘을 제조하기 위한 장치 및 방법
JP2022538811A (ja) * 2019-07-04 2022-09-06 シュミット シリコン テクノロジー ゲゼルシャフト ミット ベシュレンクテル ハフツング 液体シリコンを製造するための装置及び方法
JP7297108B2 (ja) 2019-07-04 2023-06-23 シュミット シリコン テクノロジー ゲゼルシャフト ミット ベシュレンクテル ハフツング 液体シリコンを製造するための装置及び方法
KR102689682B1 (ko) 2019-07-04 2024-07-29 슈미트 실리콘 테크놀로지 게엠베하 액체 실리콘을 제조하기 위한 장치 및 방법
KR20220038730A (ko) * 2019-08-08 2022-03-29 슈미트 실리콘 테크놀로지 게엠베하 실리콘 함유 재료의 제조 방법 및 장치
KR102814341B1 (ko) 2019-08-08 2025-06-05 슈미트 실리콘 테크놀로지 게엠베하 실리콘 함유 재료의 제조 방법 및 장치

Also Published As

Publication number Publication date
WO2009143264A3 (en) 2010-03-11
EP2291552A2 (en) 2011-03-09
TW201009139A (en) 2010-03-01
CA2725104A1 (en) 2009-11-26
US20090289390A1 (en) 2009-11-26
WO2009143264A2 (en) 2009-11-26
CN102084038B (zh) 2013-12-11
EP2291552A4 (en) 2012-01-04
KR20110030482A (ko) 2011-03-23
CN102084038A (zh) 2011-06-01

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