TW201009139A - Direct silicon or reactive metal casting - Google Patents
Direct silicon or reactive metal casting Download PDFInfo
- Publication number
- TW201009139A TW201009139A TW098116130A TW98116130A TW201009139A TW 201009139 A TW201009139 A TW 201009139A TW 098116130 A TW098116130 A TW 098116130A TW 98116130 A TW98116130 A TW 98116130A TW 201009139 A TW201009139 A TW 201009139A
- Authority
- TW
- Taiwan
- Prior art keywords
- reactor
- casting
- reactor chamber
- liquid
- helium
- Prior art date
Links
- 229910052710 silicon Inorganic materials 0.000 title abstract 9
- 239000010703 silicon Substances 0.000 title abstract 9
- 238000005058 metal casting Methods 0.000 title 1
- 239000007788 liquid Substances 0.000 claims abstract description 51
- 238000006243 chemical reaction Methods 0.000 claims abstract description 31
- 238000005266 casting Methods 0.000 claims abstract description 27
- 238000002844 melting Methods 0.000 claims abstract description 23
- 230000008018 melting Effects 0.000 claims abstract description 23
- 239000007787 solid Substances 0.000 claims abstract description 22
- 238000004519 manufacturing process Methods 0.000 claims abstract description 14
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 7
- 238000000034 method Methods 0.000 claims description 58
- 239000001307 helium Substances 0.000 claims description 42
- 229910052734 helium Inorganic materials 0.000 claims description 42
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 42
- 239000007789 gas Substances 0.000 claims description 38
- 239000004575 stone Substances 0.000 claims description 12
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 9
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 9
- 229910052707 ruthenium Inorganic materials 0.000 claims description 9
- 230000015271 coagulation Effects 0.000 claims description 8
- 238000005345 coagulation Methods 0.000 claims description 8
- 239000013078 crystal Substances 0.000 claims description 8
- 238000007711 solidification Methods 0.000 claims description 8
- 230000008023 solidification Effects 0.000 claims description 8
- 229910052732 germanium Inorganic materials 0.000 claims description 7
- 229910052684 Cerium Inorganic materials 0.000 claims description 5
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 claims description 5
- 238000009749 continuous casting Methods 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 3
- 210000003298 dental enamel Anatomy 0.000 claims description 2
- 239000012530 fluid Substances 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims description 2
- XZEDOJJUYAVDJB-UHFFFAOYSA-N 1,1-diiododecane Chemical group CCCCCCCCCC(I)I XZEDOJJUYAVDJB-UHFFFAOYSA-N 0.000 claims 1
- 239000011888 foil Substances 0.000 claims 1
- 239000004973 liquid crystal related substance Substances 0.000 claims 1
- 150000002923 oximes Chemical group 0.000 claims 1
- 238000007670 refining Methods 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 abstract description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 8
- 239000000463 material Substances 0.000 description 30
- 239000000047 product Substances 0.000 description 26
- 239000000843 powder Substances 0.000 description 16
- 229910052751 metal Inorganic materials 0.000 description 15
- 239000002184 metal Substances 0.000 description 15
- 239000002245 particle Substances 0.000 description 15
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 15
- 239000012263 liquid product Substances 0.000 description 11
- 239000002994 raw material Substances 0.000 description 11
- 229910052715 tantalum Inorganic materials 0.000 description 9
- 206010039509 Scab Diseases 0.000 description 8
- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 description 8
- 230000006698 induction Effects 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- 238000011109 contamination Methods 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- 238000005520 cutting process Methods 0.000 description 5
- 239000012071 phase Substances 0.000 description 5
- 239000010408 film Substances 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000008187 granular material Substances 0.000 description 3
- 229910002804 graphite Inorganic materials 0.000 description 3
- 239000010439 graphite Substances 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 239000011449 brick Substances 0.000 description 2
- 239000004035 construction material Substances 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000007667 floating Methods 0.000 description 2
- 229910052747 lanthanoid Inorganic materials 0.000 description 2
- 150000002602 lanthanoids Chemical class 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 2
- 238000005979 thermal decomposition reaction Methods 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- FWLKKPKZQYVAFR-LVEZLNDCSA-N (e)-but-2-enedioic acid;1-(2-ethoxyethyl)-2-(4-methyl-1,4-diazepan-1-yl)benzimidazole Chemical compound OC(=O)\C=C\C(O)=O.OC(=O)\C=C\C(O)=O.N=1C2=CC=CC=C2N(CCOCC)C=1N1CCCN(C)CC1 FWLKKPKZQYVAFR-LVEZLNDCSA-N 0.000 description 1
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 1
- 229910052691 Erbium Inorganic materials 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 208000027697 autoimmune lymphoproliferative syndrome due to CTLA4 haploinsuffiency Diseases 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- GPTXWRGISTZRIO-UHFFFAOYSA-N chlorquinaldol Chemical compound ClC1=CC(Cl)=C(O)C2=NC(C)=CC=C21 GPTXWRGISTZRIO-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 239000012809 cooling fluid Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 description 1
- 238000004821 distillation Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 229960000325 emedastine Drugs 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000003701 inert diluent Substances 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000011344 liquid material Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 238000010309 melting process Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052863 mullite Inorganic materials 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 239000011435 rock Substances 0.000 description 1
- 238000004513 sizing Methods 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000009897 systematic effect Effects 0.000 description 1
- 229910003468 tantalcarbide Inorganic materials 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 230000036962 time dependent Effects 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- Silicon Compounds (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12884708P | 2008-05-23 | 2008-05-23 | |
| US12/378,243 US20090289390A1 (en) | 2008-05-23 | 2009-02-11 | Direct silicon or reactive metal casting |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW201009139A true TW201009139A (en) | 2010-03-01 |
Family
ID=41340860
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW098116130A TW201009139A (en) | 2008-05-23 | 2009-05-15 | Direct silicon or reactive metal casting |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US20090289390A1 (enExample) |
| EP (1) | EP2291552A4 (enExample) |
| JP (1) | JP2011521874A (enExample) |
| KR (1) | KR20110030482A (enExample) |
| CN (1) | CN102084038B (enExample) |
| CA (1) | CA2725104A1 (enExample) |
| TW (1) | TW201009139A (enExample) |
| WO (1) | WO2009143264A2 (enExample) |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20100189926A1 (en) * | 2006-04-14 | 2010-07-29 | Deluca Charles | Plasma deposition apparatus and method for making high purity silicon |
| US20100047148A1 (en) * | 2008-05-23 | 2010-02-25 | Rec Silicon, Inc. | Skull reactor |
| CN102498062A (zh) * | 2009-04-29 | 2012-06-13 | 卡利太阳能有限公司 | 升级冶金级硅材料提纯的过程控制 |
| WO2011079485A1 (zh) * | 2009-12-31 | 2011-07-07 | 江苏中能硅业科技发展有限公司 | 硅单质的生产方法及生产设备 |
| DE102010011853A1 (de) * | 2010-03-09 | 2011-09-15 | Schmid Silicon Technology Gmbh | Verfahren zur Herstellung von hochreinem Silizium |
| EP2558232B1 (de) * | 2010-04-13 | 2017-07-12 | Schmid Silicon Technology GmbH | Herstellung von monokristallinen halbleiterwerkstoffen |
| DE102010021004A1 (de) * | 2010-05-14 | 2011-11-17 | Schmid Silicon Technology Gmbh | Herstellung von monokristallinen Halbleiterwerkstoffen |
| DE102010015354A1 (de) * | 2010-04-13 | 2011-10-13 | Schmid Silicon Technology Gmbh | Herstellung eines kristallinen Halbleiterwerkstoffs |
| DE102010045040A1 (de) * | 2010-09-10 | 2012-03-15 | Centrotherm Sitec Gmbh | Verfahren und Vorrichtung zum Herstellen von Silizium |
| US20120082610A1 (en) * | 2010-10-02 | 2012-04-05 | Channon Matthew J | Fluorspar/Iodide process for reduction,purificatioin, and crystallization of silicon |
| KR101339481B1 (ko) * | 2011-08-05 | 2013-12-10 | 주식회사 글로실 | 단결정 실리콘 웨이퍼 원료 제조를 위한 다결정 실리콘 로드 제조방법 |
| CN104583122B (zh) * | 2012-08-29 | 2017-09-05 | 赫姆洛克半导体运营有限责任公司 | 锥形流化床反应器及其使用方法 |
| CN103626184B (zh) * | 2013-07-31 | 2016-02-24 | 浙江精功新材料技术有限公司 | 一种高纯液体多晶硅的制备方法 |
| CN106365169A (zh) * | 2016-08-24 | 2017-02-01 | 上海交通大学 | 一种由硅烷直接铸造多晶硅锭的设备及方法 |
| CN106319618A (zh) * | 2016-09-22 | 2017-01-11 | 上海交通大学 | 一种由硅烷制造直拉单晶硅棒的设备及方法 |
| DE102019209898A1 (de) * | 2019-07-04 | 2021-01-07 | Schmid Silicon Technology Gmbh | Vorrichtung und Verfahren zur Bildung von flüssigem Silizium |
| DE102019211921A1 (de) * | 2019-08-08 | 2021-02-11 | Schmid Silicon Technology Gmbh | Verfahren und Vorrichtung zur Erzeugung siliziumhaltiger Materialien |
| CN112893789B (zh) * | 2021-01-15 | 2022-08-30 | 台州学院 | 一种用于生产半导体材料箔的装置及方法 |
| CN113415805B (zh) * | 2021-06-16 | 2022-03-29 | 何良雨 | 一种激光维持等离子体制备多晶硅的方法及系统 |
| EP4479582A1 (en) * | 2022-02-15 | 2024-12-25 | Lau Superconductors Inc. | Manufacture and repair of high temperature reinforced superconductors |
Family Cites Families (35)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4049384A (en) * | 1975-04-14 | 1977-09-20 | Arthur D. Little, Inc. | Cold crucible system |
| US4102765A (en) * | 1977-01-06 | 1978-07-25 | Westinghouse Electric Corp. | Arc heater production of silicon involving alkali or alkaline-earth metals |
| US4188368A (en) * | 1978-03-29 | 1980-02-12 | Nasa | Method of producing silicon |
| US4212343A (en) * | 1979-03-16 | 1980-07-15 | Allied Chemical Corporation | Continuous casting method and apparatus for structurally defined metallic strips |
| DE3016807A1 (de) * | 1980-05-02 | 1981-11-05 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Verfahren zur herstellung von silizium |
| US4274473A (en) * | 1980-01-14 | 1981-06-23 | Allied Chemical Corporation | Contour control for planar flow casting of metal ribbon |
| US4343772A (en) * | 1980-02-29 | 1982-08-10 | Nasa | Thermal reactor |
| CA1147698A (en) * | 1980-10-15 | 1983-06-07 | Maher I. Boulos | Purification of metallurgical grade silicon |
| JPS59501109A (ja) * | 1982-06-22 | 1984-06-28 | エシルコ−ポレ−シヨン | ソ−ラ−グレ−ドの珪素を製造するための装置と方法 |
| DE3419137A1 (de) * | 1984-05-23 | 1985-11-28 | Bayer Ag, 5090 Leverkusen | Verfahren und vorrichtung zur herstellung von halbleiterfolien |
| DE3629231A1 (de) * | 1986-08-28 | 1988-03-03 | Heliotronic Gmbh | Verfahren zum aufschmelzen von in einen schmelztiegel chargiertem siliciumpulver und schmelztiegel zur durchfuehrung des verfahrens |
| US4936375A (en) * | 1988-10-13 | 1990-06-26 | Axel Johnson Metals, Inc. | Continuous casting of ingots |
| DE4228402C2 (de) * | 1992-08-26 | 2000-08-03 | Ald Vacuum Techn Ag | Zur Atmosphäre hin abgeschlossene Induktionsschmelzvorrichtung |
| DE4320766C2 (de) * | 1993-06-23 | 2002-06-27 | Ald Vacuum Techn Ag | Vorrichtung zum Einschmelzen einer festen Schicht aus elektrisch leitfähigem Material |
| DE19607805C1 (de) * | 1996-03-01 | 1997-07-17 | Ald Vacuum Techn Gmbh | Verfahren und Vorrichtung zum Schmelzen und Gießen von Metallen in Formen |
| US5842511A (en) * | 1996-08-19 | 1998-12-01 | Alliedsignal Inc. | Casting wheel having equiaxed fine grain quench surface |
| JP3325900B2 (ja) * | 1996-10-14 | 2002-09-17 | 川崎製鉄株式会社 | 多結晶シリコンの製造方法及び装置、並びに太陽電池用シリコン基板の製造方法 |
| FR2772741B1 (fr) * | 1997-12-19 | 2000-03-10 | Centre Nat Rech Scient | Procede et installation d'affinage du silicium |
| US6468886B2 (en) * | 1999-06-15 | 2002-10-22 | Midwest Research Institute | Purification and deposition of silicon by an iodide disproportionation reaction |
| JP3646570B2 (ja) * | 1999-07-01 | 2005-05-11 | 三菱住友シリコン株式会社 | シリコン連続鋳造方法 |
| DE60037944T2 (de) * | 2000-12-28 | 2009-01-22 | Sumco Corp. | Kontinuierliches giessverfahren für silizium |
| US6960537B2 (en) * | 2001-10-02 | 2005-11-01 | Asm America, Inc. | Incorporation of nitrogen into high k dielectric film |
| US6926876B2 (en) * | 2002-01-17 | 2005-08-09 | Paul V. Kelsey | Plasma production of polycrystalline silicon |
| US7082986B2 (en) * | 2002-02-08 | 2006-08-01 | Cornell Research Foundation, Inc. | System and method for continuous casting of a molten material |
| US7175685B1 (en) * | 2002-04-15 | 2007-02-13 | Gt Solar Incorporated | Dry conversion of high purity ultrafine silicon powder to densified pellet form for silicon melting applications |
| RU2213792C1 (ru) * | 2002-04-19 | 2003-10-10 | Бурлов Юрий Александрович | Плазменный реактор-сепаратор |
| US6780219B2 (en) * | 2002-07-03 | 2004-08-24 | Osram Sylvania Inc. | Method of spheridizing silicon metal powders |
| NO20033207D0 (no) * | 2002-07-31 | 2003-07-15 | Per Kristian Egeberg | Fremgangsmåte og reaktor for fremstilling av höyrent silisium, samt anvendelse av fremgangsmåten og reaktoren ved fremstilling av höyrentsilisium fra uraffinert silisium |
| JP2005033173A (ja) * | 2003-06-16 | 2005-02-03 | Renesas Technology Corp | 半導体集積回路装置の製造方法 |
| JP4235066B2 (ja) * | 2003-09-03 | 2009-03-04 | 日本エー・エス・エム株式会社 | 薄膜形成方法 |
| US20070207268A1 (en) * | 2003-12-08 | 2007-09-06 | Webb R K | Ribbed CVC structures and methods of producing |
| US7141114B2 (en) * | 2004-06-30 | 2006-11-28 | Rec Silicon Inc | Process for producing a crystalline silicon ingot |
| JP2008535758A (ja) * | 2005-04-10 | 2008-09-04 | アールイーシー シリコン インコーポレイテッド | 多結晶シリコンの製造 |
| US7396415B2 (en) * | 2005-06-02 | 2008-07-08 | Asm America, Inc. | Apparatus and methods for isolating chemical vapor reactions at a substrate surface |
| JP5141020B2 (ja) * | 2007-01-16 | 2013-02-13 | 株式会社Ｓｕｍｃｏ | 多結晶シリコンの鋳造方法 |
-
2009
- 2009-02-11 US US12/378,243 patent/US20090289390A1/en not_active Abandoned
- 2009-05-15 TW TW098116130A patent/TW201009139A/zh unknown
- 2009-05-20 KR KR1020107028966A patent/KR20110030482A/ko not_active Withdrawn
- 2009-05-20 JP JP2011510685A patent/JP2011521874A/ja active Pending
- 2009-05-20 WO PCT/US2009/044704 patent/WO2009143264A2/en not_active Ceased
- 2009-05-20 CN CN2009801187328A patent/CN102084038B/zh not_active Expired - Fee Related
- 2009-05-20 CA CA2725104A patent/CA2725104A1/en not_active Abandoned
- 2009-05-20 EP EP09751492A patent/EP2291552A4/en not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| JP2011521874A (ja) | 2011-07-28 |
| WO2009143264A3 (en) | 2010-03-11 |
| EP2291552A2 (en) | 2011-03-09 |
| CA2725104A1 (en) | 2009-11-26 |
| US20090289390A1 (en) | 2009-11-26 |
| WO2009143264A2 (en) | 2009-11-26 |
| CN102084038B (zh) | 2013-12-11 |
| EP2291552A4 (en) | 2012-01-04 |
| KR20110030482A (ko) | 2011-03-23 |
| CN102084038A (zh) | 2011-06-01 |
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