KR20110030482A - 실리콘 또는 반응성 금속의 직접 주조 - Google Patents

실리콘 또는 반응성 금속의 직접 주조 Download PDF

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Publication number
KR20110030482A
KR20110030482A KR1020107028966A KR20107028966A KR20110030482A KR 20110030482 A KR20110030482 A KR 20110030482A KR 1020107028966 A KR1020107028966 A KR 1020107028966A KR 20107028966 A KR20107028966 A KR 20107028966A KR 20110030482 A KR20110030482 A KR 20110030482A
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South Korea
Prior art keywords
silicon
casting
reactor
containing gas
liquid
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Korean (ko)
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프란츠 휴고
로날드 제이. 라이스
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알이씨 실리콘 인코포레이티드
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Publication of KR20110030482A publication Critical patent/KR20110030482A/ko
Withdrawn legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
KR1020107028966A 2008-05-23 2009-05-20 실리콘 또는 반응성 금속의 직접 주조 Withdrawn KR20110030482A (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US12884708P 2008-05-23 2008-05-23
US61/128,847 2008-05-23
US12/378,243 US20090289390A1 (en) 2008-05-23 2009-02-11 Direct silicon or reactive metal casting
US12/378,243 2009-02-11

Publications (1)

Publication Number Publication Date
KR20110030482A true KR20110030482A (ko) 2011-03-23

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ID=41340860

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020107028966A Withdrawn KR20110030482A (ko) 2008-05-23 2009-05-20 실리콘 또는 반응성 금속의 직접 주조

Country Status (8)

Country Link
US (1) US20090289390A1 (enExample)
EP (1) EP2291552A4 (enExample)
JP (1) JP2011521874A (enExample)
KR (1) KR20110030482A (enExample)
CN (1) CN102084038B (enExample)
CA (1) CA2725104A1 (enExample)
TW (1) TW201009139A (enExample)
WO (1) WO2009143264A2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101339481B1 (ko) * 2011-08-05 2013-12-10 주식회사 글로실 단결정 실리콘 웨이퍼 원료 제조를 위한 다결정 실리콘 로드 제조방법

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WO2011079485A1 (zh) * 2009-12-31 2011-07-07 江苏中能硅业科技发展有限公司 硅单质的生产方法及生产设备
DE102010011853A1 (de) * 2010-03-09 2011-09-15 Schmid Silicon Technology Gmbh Verfahren zur Herstellung von hochreinem Silizium
EP2558232B1 (de) * 2010-04-13 2017-07-12 Schmid Silicon Technology GmbH Herstellung von monokristallinen halbleiterwerkstoffen
DE102010021004A1 (de) * 2010-05-14 2011-11-17 Schmid Silicon Technology Gmbh Herstellung von monokristallinen Halbleiterwerkstoffen
DE102010015354A1 (de) * 2010-04-13 2011-10-13 Schmid Silicon Technology Gmbh Herstellung eines kristallinen Halbleiterwerkstoffs
DE102010045040A1 (de) * 2010-09-10 2012-03-15 Centrotherm Sitec Gmbh Verfahren und Vorrichtung zum Herstellen von Silizium
US20120082610A1 (en) * 2010-10-02 2012-04-05 Channon Matthew J Fluorspar/Iodide process for reduction,purificatioin, and crystallization of silicon
CN104583122B (zh) * 2012-08-29 2017-09-05 赫姆洛克半导体运营有限责任公司 锥形流化床反应器及其使用方法
CN103626184B (zh) * 2013-07-31 2016-02-24 浙江精功新材料技术有限公司 一种高纯液体多晶硅的制备方法
CN106365169A (zh) * 2016-08-24 2017-02-01 上海交通大学 一种由硅烷直接铸造多晶硅锭的设备及方法
CN106319618A (zh) * 2016-09-22 2017-01-11 上海交通大学 一种由硅烷制造直拉单晶硅棒的设备及方法
DE102019209898A1 (de) * 2019-07-04 2021-01-07 Schmid Silicon Technology Gmbh Vorrichtung und Verfahren zur Bildung von flüssigem Silizium
DE102019211921A1 (de) * 2019-08-08 2021-02-11 Schmid Silicon Technology Gmbh Verfahren und Vorrichtung zur Erzeugung siliziumhaltiger Materialien
CN112893789B (zh) * 2021-01-15 2022-08-30 台州学院 一种用于生产半导体材料箔的装置及方法
CN113415805B (zh) * 2021-06-16 2022-03-29 何良雨 一种激光维持等离子体制备多晶硅的方法及系统
EP4479582A1 (en) * 2022-02-15 2024-12-25 Lau Superconductors Inc. Manufacture and repair of high temperature reinforced superconductors

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101339481B1 (ko) * 2011-08-05 2013-12-10 주식회사 글로실 단결정 실리콘 웨이퍼 원료 제조를 위한 다결정 실리콘 로드 제조방법

Also Published As

Publication number Publication date
JP2011521874A (ja) 2011-07-28
WO2009143264A3 (en) 2010-03-11
EP2291552A2 (en) 2011-03-09
TW201009139A (en) 2010-03-01
CA2725104A1 (en) 2009-11-26
US20090289390A1 (en) 2009-11-26
WO2009143264A2 (en) 2009-11-26
CN102084038B (zh) 2013-12-11
EP2291552A4 (en) 2012-01-04
CN102084038A (zh) 2011-06-01

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PA0105 International application

Patent event date: 20101223

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
PC1203 Withdrawal of no request for examination
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid