CN102084038B - 硅或活性金属的直接铸造 - Google Patents

硅或活性金属的直接铸造 Download PDF

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Publication number
CN102084038B
CN102084038B CN2009801187328A CN200980118732A CN102084038B CN 102084038 B CN102084038 B CN 102084038B CN 2009801187328 A CN2009801187328 A CN 2009801187328A CN 200980118732 A CN200980118732 A CN 200980118732A CN 102084038 B CN102084038 B CN 102084038B
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CN
China
Prior art keywords
silicon
reaction chamber
containing gas
liquid
temperature
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Expired - Fee Related
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CN2009801187328A
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English (en)
Chinese (zh)
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CN102084038A (zh
Inventor
弗朗茨·雨果
罗纳德·J·赖斯
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Rec Silicon Inc
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Rec Silicon Inc
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
CN2009801187328A 2008-05-23 2009-05-20 硅或活性金属的直接铸造 Expired - Fee Related CN102084038B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US12884708P 2008-05-23 2008-05-23
US61/128,847 2008-05-23
US12/378,243 US20090289390A1 (en) 2008-05-23 2009-02-11 Direct silicon or reactive metal casting
US12/378,243 2009-02-11
PCT/US2009/044704 WO2009143264A2 (en) 2008-05-23 2009-05-20 Direct silicon or reactive metal casting

Publications (2)

Publication Number Publication Date
CN102084038A CN102084038A (zh) 2011-06-01
CN102084038B true CN102084038B (zh) 2013-12-11

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ID=41340860

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2009801187328A Expired - Fee Related CN102084038B (zh) 2008-05-23 2009-05-20 硅或活性金属的直接铸造

Country Status (8)

Country Link
US (1) US20090289390A1 (enExample)
EP (1) EP2291552A4 (enExample)
JP (1) JP2011521874A (enExample)
KR (1) KR20110030482A (enExample)
CN (1) CN102084038B (enExample)
CA (1) CA2725104A1 (enExample)
TW (1) TW201009139A (enExample)
WO (1) WO2009143264A2 (enExample)

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US20100047148A1 (en) * 2008-05-23 2010-02-25 Rec Silicon, Inc. Skull reactor
CN102498062A (zh) * 2009-04-29 2012-06-13 卡利太阳能有限公司 升级冶金级硅材料提纯的过程控制
WO2011079485A1 (zh) * 2009-12-31 2011-07-07 江苏中能硅业科技发展有限公司 硅单质的生产方法及生产设备
DE102010011853A1 (de) * 2010-03-09 2011-09-15 Schmid Silicon Technology Gmbh Verfahren zur Herstellung von hochreinem Silizium
EP2558232B1 (de) * 2010-04-13 2017-07-12 Schmid Silicon Technology GmbH Herstellung von monokristallinen halbleiterwerkstoffen
DE102010021004A1 (de) * 2010-05-14 2011-11-17 Schmid Silicon Technology Gmbh Herstellung von monokristallinen Halbleiterwerkstoffen
DE102010015354A1 (de) * 2010-04-13 2011-10-13 Schmid Silicon Technology Gmbh Herstellung eines kristallinen Halbleiterwerkstoffs
DE102010045040A1 (de) * 2010-09-10 2012-03-15 Centrotherm Sitec Gmbh Verfahren und Vorrichtung zum Herstellen von Silizium
US20120082610A1 (en) * 2010-10-02 2012-04-05 Channon Matthew J Fluorspar/Iodide process for reduction,purificatioin, and crystallization of silicon
KR101339481B1 (ko) * 2011-08-05 2013-12-10 주식회사 글로실 단결정 실리콘 웨이퍼 원료 제조를 위한 다결정 실리콘 로드 제조방법
CN104583122B (zh) * 2012-08-29 2017-09-05 赫姆洛克半导体运营有限责任公司 锥形流化床反应器及其使用方法
CN103626184B (zh) * 2013-07-31 2016-02-24 浙江精功新材料技术有限公司 一种高纯液体多晶硅的制备方法
CN106365169A (zh) * 2016-08-24 2017-02-01 上海交通大学 一种由硅烷直接铸造多晶硅锭的设备及方法
CN106319618A (zh) * 2016-09-22 2017-01-11 上海交通大学 一种由硅烷制造直拉单晶硅棒的设备及方法
DE102019209898A1 (de) * 2019-07-04 2021-01-07 Schmid Silicon Technology Gmbh Vorrichtung und Verfahren zur Bildung von flüssigem Silizium
DE102019211921A1 (de) * 2019-08-08 2021-02-11 Schmid Silicon Technology Gmbh Verfahren und Vorrichtung zur Erzeugung siliziumhaltiger Materialien
CN112893789B (zh) * 2021-01-15 2022-08-30 台州学院 一种用于生产半导体材料箔的装置及方法
CN113415805B (zh) * 2021-06-16 2022-03-29 何良雨 一种激光维持等离子体制备多晶硅的方法及系统
EP4479582A1 (en) * 2022-02-15 2024-12-25 Lau Superconductors Inc. Manufacture and repair of high temperature reinforced superconductors

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US4188368A (en) * 1978-03-29 1980-02-12 Nasa Method of producing silicon
US4343772A (en) * 1980-02-29 1982-08-10 Nasa Thermal reactor
US5961944A (en) * 1996-10-14 1999-10-05 Kawasaki Steel Corporation Process and apparatus for manufacturing polycrystalline silicon, and process for manufacturing silicon wafer for solar cell
US20030150374A1 (en) * 2000-12-28 2003-08-14 Kenichi Sasatani Silicon continuous casting method

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JPS59501109A (ja) * 1982-06-22 1984-06-28 エシルコ−ポレ−シヨン ソ−ラ−グレ−ドの珪素を製造するための装置と方法
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JP4235066B2 (ja) * 2003-09-03 2009-03-04 日本エー・エス・エム株式会社 薄膜形成方法
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Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4188368A (en) * 1978-03-29 1980-02-12 Nasa Method of producing silicon
US4343772A (en) * 1980-02-29 1982-08-10 Nasa Thermal reactor
US5961944A (en) * 1996-10-14 1999-10-05 Kawasaki Steel Corporation Process and apparatus for manufacturing polycrystalline silicon, and process for manufacturing silicon wafer for solar cell
US20030150374A1 (en) * 2000-12-28 2003-08-14 Kenichi Sasatani Silicon continuous casting method

Also Published As

Publication number Publication date
JP2011521874A (ja) 2011-07-28
WO2009143264A3 (en) 2010-03-11
EP2291552A2 (en) 2011-03-09
TW201009139A (en) 2010-03-01
CA2725104A1 (en) 2009-11-26
US20090289390A1 (en) 2009-11-26
WO2009143264A2 (en) 2009-11-26
EP2291552A4 (en) 2012-01-04
KR20110030482A (ko) 2011-03-23
CN102084038A (zh) 2011-06-01

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Granted publication date: 20131211

Termination date: 20140520