JP2011521874A5 - - Google Patents

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Publication number
JP2011521874A5
JP2011521874A5 JP2011510685A JP2011510685A JP2011521874A5 JP 2011521874 A5 JP2011521874 A5 JP 2011521874A5 JP 2011510685 A JP2011510685 A JP 2011510685A JP 2011510685 A JP2011510685 A JP 2011510685A JP 2011521874 A5 JP2011521874 A5 JP 2011521874A5
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JP
Japan
Prior art keywords
silicon
reactor chamber
containing gas
casting
solid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2011510685A
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English (en)
Japanese (ja)
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JP2011521874A (ja
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Publication date
Priority claimed from US12/378,243 external-priority patent/US20090289390A1/en
Application filed filed Critical
Publication of JP2011521874A publication Critical patent/JP2011521874A/ja
Publication of JP2011521874A5 publication Critical patent/JP2011521874A5/ja
Pending legal-status Critical Current

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JP2011510685A 2008-05-23 2009-05-20 直接シリコン鋳造又は直接反応金属鋳造 Pending JP2011521874A (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US12884708P 2008-05-23 2008-05-23
US61/128,847 2008-05-23
US12/378,243 US20090289390A1 (en) 2008-05-23 2009-02-11 Direct silicon or reactive metal casting
US12/378,243 2009-02-11
PCT/US2009/044704 WO2009143264A2 (en) 2008-05-23 2009-05-20 Direct silicon or reactive metal casting

Publications (2)

Publication Number Publication Date
JP2011521874A JP2011521874A (ja) 2011-07-28
JP2011521874A5 true JP2011521874A5 (enExample) 2012-06-07

Family

ID=41340860

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011510685A Pending JP2011521874A (ja) 2008-05-23 2009-05-20 直接シリコン鋳造又は直接反応金属鋳造

Country Status (8)

Country Link
US (1) US20090289390A1 (enExample)
EP (1) EP2291552A4 (enExample)
JP (1) JP2011521874A (enExample)
KR (1) KR20110030482A (enExample)
CN (1) CN102084038B (enExample)
CA (1) CA2725104A1 (enExample)
TW (1) TW201009139A (enExample)
WO (1) WO2009143264A2 (enExample)

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WO2011079485A1 (zh) * 2009-12-31 2011-07-07 江苏中能硅业科技发展有限公司 硅单质的生产方法及生产设备
DE102010011853A1 (de) * 2010-03-09 2011-09-15 Schmid Silicon Technology Gmbh Verfahren zur Herstellung von hochreinem Silizium
EP2558232B1 (de) * 2010-04-13 2017-07-12 Schmid Silicon Technology GmbH Herstellung von monokristallinen halbleiterwerkstoffen
DE102010021004A1 (de) * 2010-05-14 2011-11-17 Schmid Silicon Technology Gmbh Herstellung von monokristallinen Halbleiterwerkstoffen
DE102010015354A1 (de) * 2010-04-13 2011-10-13 Schmid Silicon Technology Gmbh Herstellung eines kristallinen Halbleiterwerkstoffs
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CN104583122B (zh) * 2012-08-29 2017-09-05 赫姆洛克半导体运营有限责任公司 锥形流化床反应器及其使用方法
CN103626184B (zh) * 2013-07-31 2016-02-24 浙江精功新材料技术有限公司 一种高纯液体多晶硅的制备方法
CN106365169A (zh) * 2016-08-24 2017-02-01 上海交通大学 一种由硅烷直接铸造多晶硅锭的设备及方法
CN106319618A (zh) * 2016-09-22 2017-01-11 上海交通大学 一种由硅烷制造直拉单晶硅棒的设备及方法
DE102019209898A1 (de) * 2019-07-04 2021-01-07 Schmid Silicon Technology Gmbh Vorrichtung und Verfahren zur Bildung von flüssigem Silizium
DE102019211921A1 (de) * 2019-08-08 2021-02-11 Schmid Silicon Technology Gmbh Verfahren und Vorrichtung zur Erzeugung siliziumhaltiger Materialien
CN112893789B (zh) * 2021-01-15 2022-08-30 台州学院 一种用于生产半导体材料箔的装置及方法
CN113415805B (zh) * 2021-06-16 2022-03-29 何良雨 一种激光维持等离子体制备多晶硅的方法及系统
EP4479582A1 (en) * 2022-02-15 2024-12-25 Lau Superconductors Inc. Manufacture and repair of high temperature reinforced superconductors

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