JP2011508971A - 個別の読み出しおよび書き込みパスを備えた磁気トンネル接合装置 - Google Patents
個別の読み出しおよび書き込みパスを備えた磁気トンネル接合装置 Download PDFInfo
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract
【選択図】図1
Description
図7を参照して、個別のデータ読み出しおよび書き込みパスを備えた磁気トンネル接合(MTJ)装置のアレイを含むシステムの第2の実例となる実施形態のブロック図を、表し、一般に700で示される。システム700は、磁気ランダムアクセスメモリ(MRAM)メモリセルのアレイ704につながれたメモリ管理ロジック回路702を含んでいる。代表的なセル708のようなMRAMメモリセルのアレイ704のそれぞれは、個別のデータ読み出しおよび書き込みパスを使用して動作するように構成される。
メモリ管理ロジック回路802は、1組のワード線806によってアレイ804の特定のロウを選択するために連結される。メモリ管理ロジック回路802は、ビット線810、820、830によって読み出しおよび書き込みをするために、アレイ804の特定のカラムを選択するために連結される。ソース線814、824、834は、アレイ804の選択されたセルからメモリ管理ロジック回路802にリターン電流パスを供給する。
図12を参照して、磁気トンネル接合(MTJ)装置の製造方法の特定の実例となる実施形態の流れ図が描かれる。特定の実施形態では、方法は、図1〜4の中で例証されたような個別の読み出しおよび書き込みパスを有するMTJ装置を製造するために使用されてもよい。1202で、フィルム層は、第1のMTJ構造を形成するために基板上に堆積される。図13の中で描かれる例1300は、実例であって限定されず、反強磁性(AFM)層1302、シンセティック反強磁性(SAF)層1304、中間層1306および自由層1308を含んでいる。例えば、SAF層1304は、CoFe/Ru/CoFeBサブレイヤを含んでいてもよい。中間層1306は、MgOまたはAlOxのようなトンネルバリア層、または、CuまたはRuのような導電層でもよい。自由層1308は、説明において、制限しない例として、CoFeB/NiFe/CoFeB、CoFeB、CoFe/CoFeB、NiFe/CoFeB、またはCoFe/NiFe/CoFeBサブレイヤを含んでいてもよい。
Claims (22)
- 磁気トンネル接合(MTJ)構造と、
前記MTJ構造につながれた読み出しパスと、
前記MTJ構造につながれた書き込みパスと、前記書き込みパスは前記読み出しパスから離れている、
を具備する装置。 - 請求項1の装置であって、前記MTJ構造は、
前記読み出しパスおよび前記書き込みパスの第1の基準層と、
前記書き込みパスの第2の基準層と、
を具備する。 - 請求項1の装置であって、前記読み出しパスは、前記書き込みパスより高い抵抗を有する。
- 請求項1の装置であって、前記MTJ構造は、前記読み出しパスおよび前記書き込みパスの第1のトンネルバリアと、前記読み出しパスの第2のトンネルバリアと、を具備する。
- 請求項4の装置であって、前記第1のトンネルバリアは、前記第2のトンネルバリアより低い抵抗を有する。
- 請求項1の装置であって、前記MTJ構造は、第2のMTJコンポーネントにつながれた第1のMTJコンポーネントを具備し、前記読み出しパスは、前記第1のMTJコンポーネントを具備し、前記書き込みパスは、前記第2のMTJコンポーネントを具備する。
- 請求項6の装置であって、前記第2のMTJコンポーネントは、前記第1のMTJコンポーネントにつながれる。
- 請求項1の装置であって、前記MTJ構造は、
バリア層と、
自由層と、
基準層と、
を具備する。 - 請求項1の装置であって、前記読み出しパスおよび前記書き込みパスは、自由層と、中間層と、第1の合成反強磁性(SAF)層と、第1の反強磁性(AFM)層と、を具備する。
- 請求項9の装置であって、前記読み出しパスは、第2のSAF層と、第2のAFM層と、を含む。
- 請求項10の装置であって、前記第1のSAF層および前記第2のSAF層は、コバルト鉄ボロン(CoFeB)層と、ロジウム(Ru)層と、コバルト鉄(CoFe)層と、を含む、前記書き込みパスは、前記自由層に接する導電層を含む。
- 磁気トンネル接合装置にデータを書き込む方法であって、前記方法は、
磁気トンネル接合(MTJ)装置の自由層でデータ値を格納するために、前記MTJ装置につながれた書き込みデータパスに電流を流すことを具備し、
前記MTJ装置は、個別の読み出しデータパスにつながれる。 - 請求項12の方法であって、前記書き込みパスは、1つの基準層を含む、前記読み出しパスは、2つの基準層を含む。
- 請求項12の方法であって、前記書き込みパスは、前記読み出しパスより低い抵抗を有する。
- 磁気トンネル接合装置からデータを読み出す方法であって、前記方法は、
データ値を読み出すために、磁気トンネル接合(MTJ)装置につながれた読み出しデータパスに電流を流すことを具備し、
前記MTJ装置は、個別の書き込みデータパスにつながれる。 - 請求項15の方法であって、前記MTJ装置は、前記データ値を格納するための自由層と、前記自由層に磁気的につながれる基準層と、を含む、前記書き込みデータパスは、第2の基準層を含む。
- 請求項15の方法であって、前記MTJ装置は、互いに磁気的につながれる2つのMTJ構造を具備する。
- 磁気ランダムアクセスメモリ(MRAM)セルのアレイと、
ワード線を活性化し、前記アレイの選択されたセルにアクセスするための読み出しビット線および書き込みビット線のうちの1つを選択的に活性化するのに適したメモリ管理ロジック回路と、
を具備するメモリ装置。 - 請求項18のメモリ装置であって、前記MRAMセルのアレイにつながれた第1のデータ読み出しポートと、前記MRAMセルのアレイにつながれた第2のデータ読み出しポートと、をさらに具備する。
- 請求項19のメモリ装置であって、前記第1のデータ読み出しポートおよび前記第2のデータ読み出しポートの少なくとも1つは、前記メモリ管理ロジックにつながれる。
- 磁気トンネル接合(MTJ)装置の製造方法であって、前記方法は、
自由層を含む第1のMTJ構造を形成するために、基板上に複数のフィルム層を堆積することと、
前記第1のMTJ構造の前記自由層につながれた導電層を堆積することと、
第2のMTJ構造を形成するために、前記第1のMTJ構造上に第2の複数のフィルム層を堆積することと、
を具備する。 - 請求項21の方法であって、
前記第2のMTJ構造に読み出し線をつなぐことと、
前記導電層に書き込み線をつなぐことと、
をさらに具備する。
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US11/959,797 | 2007-12-19 | ||
US11/959,797 US8004881B2 (en) | 2007-12-19 | 2007-12-19 | Magnetic tunnel junction device with separate read and write paths |
PCT/US2008/087748 WO2009079662A1 (en) | 2007-12-19 | 2008-12-19 | Magnetic tunnel junction device with separate read and write paths |
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JP2011508971A true JP2011508971A (ja) | 2011-03-17 |
JP5496911B2 JP5496911B2 (ja) | 2014-05-21 |
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JP2010539890A Expired - Fee Related JP5496911B2 (ja) | 2007-12-19 | 2008-12-19 | 個別の読み出しおよび書き込みパスを備えた磁気トンネル接合装置 |
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US (1) | US8004881B2 (ja) |
EP (1) | EP2232496B1 (ja) |
JP (1) | JP5496911B2 (ja) |
KR (1) | KR101180131B1 (ja) |
CN (2) | CN101925960B (ja) |
CA (2) | CA2710334C (ja) |
MX (1) | MX2010006977A (ja) |
RU (1) | RU2453934C2 (ja) |
WO (1) | WO2009079662A1 (ja) |
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EP2232496B1 (en) | 2012-10-03 |
CA2808570A1 (en) | 2009-06-25 |
RU2453934C2 (ru) | 2012-06-20 |
RU2010129831A (ru) | 2012-01-27 |
CN101925960A (zh) | 2010-12-22 |
EP2232496A1 (en) | 2010-09-29 |
US20090161422A1 (en) | 2009-06-25 |
WO2009079662A1 (en) | 2009-06-25 |
CN103280235B (zh) | 2016-12-28 |
CN101925960B (zh) | 2014-10-01 |
KR101180131B1 (ko) | 2012-09-05 |
CA2710334A1 (en) | 2009-06-25 |
CN103280235A (zh) | 2013-09-04 |
US8004881B2 (en) | 2011-08-23 |
MX2010006977A (es) | 2010-09-10 |
CA2808570C (en) | 2016-02-23 |
JP5496911B2 (ja) | 2014-05-21 |
KR20100095469A (ko) | 2010-08-30 |
CA2710334C (en) | 2013-12-10 |
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