JP2011192380A - 3drram - Google Patents
3drram Download PDFInfo
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- JP2011192380A JP2011192380A JP2011068801A JP2011068801A JP2011192380A JP 2011192380 A JP2011192380 A JP 2011192380A JP 2011068801 A JP2011068801 A JP 2011068801A JP 2011068801 A JP2011068801 A JP 2011068801A JP 2011192380 A JP2011192380 A JP 2011192380A
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- 238000000034 method Methods 0.000 claims abstract description 18
- 239000000463 material Substances 0.000 abstract description 23
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 12
- 229910052814 silicon oxide Inorganic materials 0.000 abstract description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 9
- 239000010703 silicon Substances 0.000 abstract description 9
- 229910052710 silicon Inorganic materials 0.000 abstract description 9
- 239000000758 substrate Substances 0.000 abstract description 8
- 230000008569 process Effects 0.000 abstract description 7
- 230000002093 peripheral effect Effects 0.000 abstract description 6
- 239000007772 electrode material Substances 0.000 abstract description 3
- 229910052581 Si3N4 Inorganic materials 0.000 abstract description 2
- 230000008021 deposition Effects 0.000 abstract description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 10
- 238000003491 array Methods 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 230000000295 complement effect Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000012163 sequencing technique Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0007—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising metal oxide memory material, e.g. perovskites
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/101—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including resistors or capacitors only
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/30—Resistive cell, memory material aspects
- G11C2213/31—Material having complex metal oxide, e.g. perovskite structure
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/77—Array wherein the memory element being directly connected to the bit lines and word lines without any access device being used
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Memories (AREA)
- Hall/Mr Elements (AREA)
Abstract
【解決手段】3D RRAMで用いられるメモリアレイ層は、シリコン基板上の周辺回路で形成され、シリコン酸化物層、下部電極材料、シリコン酸化物、抵抗器材料、シリコン酸化物、シリコン窒化物、シリコン酸化物、上部電極およびカバーリング酸化物が堆積されて、形成される。複数のメモリアレイ層は、互いの上部に形成され得る。本発明のRRAMは、1ステップまたは2ステップのプログラミングプロセスでプログラミングされ得る。
【選択図】図1
Description
(発明の要旨)
3D RRAMにおいて利用するメモリアレイ層は、周辺回路を有するシリコン基板上に形成され、堆積され、かつ平坦化される第1のシリコン酸化物層と、Pt、PtRhOx、PtIrOxおよびTiN/Ptからなる材料群から得られる材料から形成される下部電極と、下部電極の厚さの少なくとも1.5倍の厚さを有する第2の酸化物層であって、下部電極が露出するレベルまで堆積されて、平坦化される、第2の酸化物層と、メモリ抵抗器材料の層と、Si3N4の層と、該メモリ抵抗器材料の厚さの約1.5倍の厚さを有する第3の酸化物層であって、CMPされて、該メモリ抵抗器の表面を露出する、第3の酸化物層と、Pt、PtRhOx、PtIrOxおよびTiN/Ptからなる材料群から得られる材料から形成される上部電極と、カバーリング酸化物層とを含む。複数のメモリアレイ層は、互いの上部に形成され得る。
は、低電圧ビットにプログラミングされる。ワード線W2が浮遊する。全ての他のワード線は、プログラミングパルス電圧の半分でバイアスされる。ビット線B2はグランドに接続される。プログラミングパルスVpは、
に印加される。全ての他のビット線は、グランド電位にバイアスされる。結果として、抵抗器R22Aは、低抵抗状態にあり、抵抗R22Bは、高抵抗状態にある。W2ワード線に接続されたメモリ抵抗器以外のビット2の全てのメモリ抵抗器は、プログラミング電圧の半分でバイアスされる。従って、抵抗が変化しない。同様に、W2に沿った各ビット線は、1ワードを同時にプログラミングするように適切にバイアスされ得る。プログラミング後、任意の所与のビットにおける2つのメモリセル抵抗器は、それぞれ、高抵抗状態および低抵抗状態にある。
に印加される。正および負のプログラミングパルスは、同時に印加される必要はなく、A抵抗器およびB抵抗器は、別々にプログラミングされ得る。従って、メモリ抵抗器R22AおよびR22Bは、低抵抗状態RLおよび高抵抗状態RHにそれぞれプログラミングされる。全ての他のメモリ抵抗器は、プログラミングパルス電圧の半分でパルス印加されるか、または、パルス印加させないかのどちらかである。従って、選択されていないメモリ抵抗器の抵抗は、このプログラミング動作の間に変化しない。
および
で表される。
および
図12は、100本のワード線が所与のビット線に接続された状態で、メモリアレイの選択されていないワード線のバイアス電圧の関数として、正規化されたビット線電圧のプロットを示す。高抵抗状態は、100Kオームであり、低抵抗状態は、1Kオームである。このデータは、ビット線間の差動電圧を示し、ここで、VLL(v)とVHH(v)との間の差動電圧と、VLH(v)とVHL(v)との間の差動電圧は、それぞれ、図10および図11の等価回路の差動出力電圧である。差動出力電圧は、RH/RLの比が増加するにつれて増加する。
36、38、40 電極
50 セル
52 グラウンド
54 アノード
56 カソード
Claims (4)
- 3D RRAMをプログラミングする方法であって、
書き込まれるべきメモリセルを選択するステップと、
高電圧プログラミングパルスを第1の関連するビット線に印加するステップと、
低電圧プログラミングパルスを第2の関連するビット線に印加するステップと、
該関連するワード線を浮動状態にするステップと、
他の全てのワード線をプログラミングパルス電圧の半分でバイアスするステップと、
選択されていない全てのビット線をグラウンド電位にバイアスするステップと
を包含する、方法。 - メモリセルを読み出すステップは、
前記選択されていないビットのワード線に小さな電圧を印加して、前記第1の関連するビット線と前記第2の関連するビット線との間の線電圧差を増す(enhance)ステップと、
該選択されたメモリセルに関連するワード線に読み出し電圧を印加するステップと、
前記第1の関連するビット線と前記第2の関連するビット線との間の電圧差を検出するステップと
を含む、請求項1に記載の方法。 - 3D RRAMをプログラミングする方法であって、
書き込まれるべきメモリセルを選択するステップと、
該メモリセルの第1のメモリ抵抗器に低電圧プログラミングパルスを印加するステップと、
該メモリセルの第2のメモリ抵抗器に高電圧プログラミングパルスを印加するステップと、
該選択されたワード線をグラウンド電位に設定するステップと、
全ての他のワード線を0.5Vpにバイアスするステップと、
−Vpのパルス振幅を有する負のプログラミングパルスで第1の関連するビット線をバイアスするステップと、
+Vpのパルス振幅を有する正のプログラミングパルスで第2の関連するビット線をバイアスするステップと、
0Vpと0.5Vpとの間のプログラミング電圧で選択されていない全てのメモリ抵抗器をパルシングするステップと
を包含する、方法。 - メモリセルを読み出すステップは、
前記選択されていないビットのワード線に小さな電圧を印加して、前記第1の関連するビット線と前記第2の関連するビット線との間の線電圧差を増す(enhance)ステップと、
前記選択されたメモリセルに関連するワード線に読み出し電圧を印加するステップと、
該第1の関連するビット線と該第2の関連するビット線との間の電圧差を検出するステップと
を含む、請求項3に記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/720,890 US7009278B2 (en) | 2003-11-24 | 2003-11-24 | 3d rram |
US10/720,890 | 2003-11-24 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004338192A Division JP4986394B2 (ja) | 2003-11-24 | 2004-11-22 | 3drram |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2011192380A true JP2011192380A (ja) | 2011-09-29 |
JP5216992B2 JP5216992B2 (ja) | 2013-06-19 |
Family
ID=34435828
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004338192A Active JP4986394B2 (ja) | 2003-11-24 | 2004-11-22 | 3drram |
JP2011068801A Active JP5216992B2 (ja) | 2003-11-24 | 2011-03-25 | 3drram |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004338192A Active JP4986394B2 (ja) | 2003-11-24 | 2004-11-22 | 3drram |
Country Status (6)
Country | Link |
---|---|
US (2) | US7009278B2 (ja) |
EP (1) | EP1533815A3 (ja) |
JP (2) | JP4986394B2 (ja) |
KR (2) | KR100618372B1 (ja) |
CN (1) | CN100382320C (ja) |
TW (1) | TWI286837B (ja) |
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JP4986394B2 (ja) | 2012-07-25 |
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JP2005159359A (ja) | 2005-06-16 |
KR100618372B1 (ko) | 2006-08-30 |
US20060033182A1 (en) | 2006-02-16 |
EP1533815A2 (en) | 2005-05-25 |
KR20060084828A (ko) | 2006-07-25 |
JP5216992B2 (ja) | 2013-06-19 |
EP1533815A3 (en) | 2006-07-05 |
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US7009278B2 (en) | 2006-03-07 |
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