JP5429287B2 - 抵抗スイッチング・メモリー素子 - Google Patents
抵抗スイッチング・メモリー素子 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 claims description 96
- 230000008859 change Effects 0.000 claims description 48
- 230000004888 barrier function Effects 0.000 claims description 20
- 239000000463 material Substances 0.000 claims description 17
- 229910052742 iron Inorganic materials 0.000 claims description 13
- 239000000203 mixture Substances 0.000 claims description 11
- 229910052748 manganese Inorganic materials 0.000 claims description 6
- 229910052759 nickel Inorganic materials 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 230000001747 exhibiting effect Effects 0.000 claims description 4
- 239000010409 thin film Substances 0.000 description 22
- 239000000523 sample Substances 0.000 description 15
- 230000006870 function Effects 0.000 description 11
- 239000000758 substrate Substances 0.000 description 11
- 239000010410 layer Substances 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 229910002367 SrTiO Inorganic materials 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 238000002474 experimental method Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 229910010413 TiO 2 Inorganic materials 0.000 description 5
- 238000011156 evaluation Methods 0.000 description 5
- 229910052723 transition metal Inorganic materials 0.000 description 5
- 150000003624 transition metals Chemical class 0.000 description 5
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 4
- 238000000605 extraction Methods 0.000 description 4
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- 229910020599 Co 3 O 4 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
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- 239000004570 mortar (masonry) Substances 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
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- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910052692 Dysprosium Inorganic materials 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- 229910052689 Holmium Inorganic materials 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 229920000144 PEDOT:PSS Polymers 0.000 description 1
- 229910052777 Praseodymium Inorganic materials 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 229910004121 SrRuO Inorganic materials 0.000 description 1
- 229910002353 SrRuO3 Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 229910007611 Zn—In—O Inorganic materials 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000009931 harmful effect Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000003746 solid phase reaction Methods 0.000 description 1
- 238000010408 sweeping Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/8615—Hi-lo semiconductor devices, e.g. memory devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/101—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including resistors or capacitors only
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/47—Schottky barrier electrodes
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- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
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- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
- H10N70/245—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies the species being metal cations, e.g. programmable metallization cells
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- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/253—Multistable switching devices, e.g. memristors having three or more electrodes, e.g. transistor-like devices
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- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
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- H10N70/821—Device geometry
- H10N70/823—Device geometry adapted for essentially horizontal current flow, e.g. bridge type devices
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- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
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- H—ELECTRICITY
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- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/883—Oxides or nitrides
- H10N70/8836—Complex metal oxides, e.g. perovskites, spinels
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- Semiconductor Memories (AREA)
Description
上述の利点は、第2の電極についても、酸化物半導体との界面領域において整流性と抵抗変化特性とを発現し得るショットキー障壁を形成し得る材料から構成されている場合にも奏される。
なお、図1および図4に示した抵抗スイッチング・メモリー素子は、絶縁層を備えない点でこの発明の範囲外の参考例であり、図5および図6に示した抵抗スイッチング・メモリー素子がこの発明の範囲内の実施形態である。
このような構造を有する抵抗スイッチング・メモリー素子31を、実験例1では、以下の工程に従って作製した。
抵抗変化率[%]=(高抵抗状態の抵抗値−低抵抗状態の抵抗値)/低抵抗状態の抵抗値×100
の式に基づいて算出した。その結果が表1の「抵抗変化率」の欄に示されている。
酸化物半導体33を形成するため、一般式:(Ba1−xSrx)Ti1−yMyO3(Mは、Mn、CoおよびFeのいずれか)で示されるセラミックターゲット(直径:20mm、厚み5mm)を固相反応法で作製した。原料としては、高純度のSrCO3、BaCO3、TiO2、Mn3O4、Co3O4およびFe2O3の各粉末を用い、表2〜6に示した所定の組成になるように秤量した後、メノウ乳鉢でエタノールを加えて十分混ざるように混合した。次に、乾燥させた後、バインダを添加し、高圧プレス機および金型を用いて焼成した後、直径が約20mm、厚みが約5mmになるように成形した。この成形体を、脱脂した後、1300℃の温度で大気中において4時間焼成し、ターゲットを得た。
抵抗変化率[%]=(高抵抗状態の抵抗値−低抵抗状態の抵抗値)/低抵抗状態の抵抗値×100
の式に基づいて算出した。その結果が表2ないし表6の「抵抗変化率」の欄に示されている。
実験例3では、一般式:Ti1−xMxO2(Mは、Co、Fe、NiおよびCuのいずれか)で示され、表7に示した所定の組成を有するセラミックターゲットを作製し、これを用いて、酸化物半導体33を形成した。
実験例4では、実験例2および3において作製した試料2〜58について、高抵抗状態と低抵抗状態におけるインピーダンスの周波数特性評価を行なった。
インピーダンス変化率[%]=(高抵抗状態のインピーダンス−低抵抗状態のインピーダンス)/低抵抗状態のインピーダンス×100
の式に基づいて算出した。その結果が表8に示されている。
12,33 酸化物半導体
13,34 第1の電極
14,35 第2の電極
15,32 第3の電極
17,18 界面
19,39 制御用電源
22 絶縁層
Claims (5)
- 酸化物半導体と、前記酸化物半導体に接触するように設けられた、第1、第2および第3の電極とを備え、
前記第1の電極は、前記酸化物半導体との界面領域において整流性と抵抗変化特性とを発現し得るショットキー障壁を形成し得る材料からなり、
前記第3の電極は、前記第1および第2の電極と比較して、前記酸化物半導体に対してよりオーミックな接合が得られる材料からなり、
前記第1の電極と前記第2の電極との間に接続される、前記界面領域の抵抗を制御するための制御用電源をさらに備えるとともに、
前記第2の電極と前記酸化物半導体との界面に沿って形成される絶縁層をさらに備える、
抵抗スイッチング・メモリー素子。 - 前記第2の電極は、前記酸化物半導体との界面領域において整流性と抵抗変化特性とを発現し得るショットキー障壁を形成し得る材料からなる、請求項1に記載の抵抗スイッチング・メモリー素子。
- 前記酸化物半導体がn型の半導体である、請求項1または2に記載の抵抗スイッチング・メモリー素子。
- 前記酸化物半導体は、一般式:(Ba1−xSrx)Ti1−yMyO3(Mは、Mn、FeおよびCoのうちの少なくとも1種。0≦x≦1.0かつ0.005≦y≦0.05)で示される組成を有する、請求項3に記載の抵抗スイッチング・メモリー素子。
- 前記酸化物半導体は、一般式:Ti1−xMxO2(Mは、Fe、Co、NiおよびCuのうちの少なくとも1種。0.005≦x≦0.05)で示される組成を有する、請求項3に記載の抵抗スイッチング・メモリー素子。
Priority Applications (1)
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JP2011519764A JP5429287B2 (ja) | 2009-06-15 | 2010-06-14 | 抵抗スイッチング・メモリー素子 |
Applications Claiming Priority (4)
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JP2009142193 | 2009-06-15 | ||
JP2009142193 | 2009-06-15 | ||
PCT/JP2010/060019 WO2010147073A1 (ja) | 2009-06-15 | 2010-06-14 | 抵抗スイッチング・メモリー素子 |
JP2011519764A JP5429287B2 (ja) | 2009-06-15 | 2010-06-14 | 抵抗スイッチング・メモリー素子 |
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JPWO2010147073A1 JPWO2010147073A1 (ja) | 2012-12-06 |
JP5429287B2 true JP5429287B2 (ja) | 2014-02-26 |
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JP2011519764A Expired - Fee Related JP5429287B2 (ja) | 2009-06-15 | 2010-06-14 | 抵抗スイッチング・メモリー素子 |
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US (1) | US9035273B2 (ja) |
JP (1) | JP5429287B2 (ja) |
WO (1) | WO2010147073A1 (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2013125421A1 (ja) * | 2012-02-21 | 2013-08-29 | 株式会社村田製作所 | 抵抗スイッチングデバイスおよびその製造方法 |
JP5622769B2 (ja) * | 2012-03-08 | 2014-11-12 | 株式会社東芝 | 半導体装置 |
US9691910B2 (en) * | 2013-08-19 | 2017-06-27 | Idemitsu Kosan Co., Ltd. | Oxide semiconductor substrate and schottky barrier diode |
JP6296464B2 (ja) * | 2016-12-27 | 2018-03-20 | 国立研究開発法人物質・材料研究機構 | 多機能電気伝導素子の使用方法 |
JP7205273B2 (ja) * | 2019-02-12 | 2023-01-17 | 富士通株式会社 | 電子装置及び認証装置 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000236100A (ja) * | 1999-02-17 | 2000-08-29 | Sanyo Electric Co Ltd | 半導体素子 |
JP2006032867A (ja) * | 2004-07-21 | 2006-02-02 | Sony Corp | 記憶素子及びその駆動方法 |
WO2006101152A1 (ja) * | 2005-03-23 | 2006-09-28 | National Institute Of Advanced Industrial Science And Technology | 不揮発性メモリ素子 |
JP2009283680A (ja) * | 2008-05-22 | 2009-12-03 | Toshiba Corp | 不揮発性記憶装置及びその製造方法 |
JP2009295941A (ja) * | 2008-06-09 | 2009-12-17 | Univ Of Tokyo | 記憶素子およびその製造方法 |
JP2010080490A (ja) * | 2008-09-24 | 2010-04-08 | National Institute Of Advanced Industrial Science & Technology | 半導体素子 |
Family Cites Families (5)
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JP3882890B2 (ja) | 2001-10-19 | 2007-02-21 | 株式会社村田製作所 | 圧電型電気音響変換器 |
US7009278B2 (en) * | 2003-11-24 | 2006-03-07 | Sharp Laboratories Of America, Inc. | 3d rram |
JP2006120702A (ja) * | 2004-10-19 | 2006-05-11 | Matsushita Electric Ind Co Ltd | 可変抵抗素子および半導体装置 |
KR100927843B1 (ko) | 2006-02-21 | 2009-11-23 | 가부시키가이샤 무라타 세이사쿠쇼 | 압전발음체 |
US8989412B2 (en) | 2009-05-25 | 2015-03-24 | Panasonic Intellectual Property Management Co., Ltd. | Piezoelectric acoustic transducer |
-
2010
- 2010-06-14 WO PCT/JP2010/060019 patent/WO2010147073A1/ja active Application Filing
- 2010-06-14 JP JP2011519764A patent/JP5429287B2/ja not_active Expired - Fee Related
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2011
- 2011-12-13 US US13/323,927 patent/US9035273B2/en not_active Expired - Fee Related
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000236100A (ja) * | 1999-02-17 | 2000-08-29 | Sanyo Electric Co Ltd | 半導体素子 |
JP2006032867A (ja) * | 2004-07-21 | 2006-02-02 | Sony Corp | 記憶素子及びその駆動方法 |
WO2006101152A1 (ja) * | 2005-03-23 | 2006-09-28 | National Institute Of Advanced Industrial Science And Technology | 不揮発性メモリ素子 |
JP2009283680A (ja) * | 2008-05-22 | 2009-12-03 | Toshiba Corp | 不揮発性記憶装置及びその製造方法 |
JP2009295941A (ja) * | 2008-06-09 | 2009-12-17 | Univ Of Tokyo | 記憶素子およびその製造方法 |
JP2010080490A (ja) * | 2008-09-24 | 2010-04-08 | National Institute Of Advanced Industrial Science & Technology | 半導体素子 |
Non-Patent Citations (1)
Title |
---|
JPN7013002192; T.Fujii, M.Kawasaki, A.Sawa, H.Akoh, Y.Kawazoe et al.: 'Hysteretic current-voltage characteristics and resistance switching at an epitaxial oxide Schottky j' Applied Physics Letters Volume 86 012107, 2005, American Institute of Physics. * |
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Publication number | Publication date |
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US20120132883A1 (en) | 2012-05-31 |
WO2010147073A1 (ja) | 2010-12-23 |
US9035273B2 (en) | 2015-05-19 |
JPWO2010147073A1 (ja) | 2012-12-06 |
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