CN100382320C - 存储阵列层和编程3d rram的方法 - Google Patents
存储阵列层和编程3d rram的方法 Download PDFInfo
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- CN100382320C CN100382320C CNB2004100104312A CN200410010431A CN100382320C CN 100382320 C CN100382320 C CN 100382320C CN B2004100104312 A CNB2004100104312 A CN B2004100104312A CN 200410010431 A CN200410010431 A CN 200410010431A CN 100382320 C CN100382320 C CN 100382320C
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- 239000000463 material Substances 0.000 claims abstract description 22
- 238000000034 method Methods 0.000 claims abstract description 15
- 239000010703 silicon Substances 0.000 claims abstract description 9
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 8
- 230000002093 peripheral effect Effects 0.000 claims abstract description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 11
- 230000008021 deposition Effects 0.000 claims description 8
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- 239000007772 electrode material Substances 0.000 abstract 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 4
- 239000010408 film Substances 0.000 description 3
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000006399 behavior Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000010606 normalization Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Classifications
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0007—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising metal oxide memory material, e.g. perovskites
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/101—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including resistors or capacitors only
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/30—Resistive cell, memory material aspects
- G11C2213/31—Material having complex metal oxide, e.g. perovskite structure
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/77—Array wherein the memory element being directly connected to the bit lines and word lines without any access device being used
Abstract
Description
Claims (7)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/720,890 US7009278B2 (en) | 2003-11-24 | 2003-11-24 | 3d rram |
US10/720890 | 2003-11-24 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1665030A CN1665030A (zh) | 2005-09-07 |
CN100382320C true CN100382320C (zh) | 2008-04-16 |
Family
ID=34435828
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2004100104312A Expired - Fee Related CN100382320C (zh) | 2003-11-24 | 2004-11-24 | 存储阵列层和编程3d rram的方法 |
Country Status (6)
Country | Link |
---|---|
US (2) | US7009278B2 (zh) |
EP (1) | EP1533815A3 (zh) |
JP (2) | JP4986394B2 (zh) |
KR (2) | KR100618372B1 (zh) |
CN (1) | CN100382320C (zh) |
TW (1) | TWI286837B (zh) |
Families Citing this family (61)
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JP4880894B2 (ja) * | 2004-11-17 | 2012-02-22 | シャープ株式会社 | 半導体記憶装置の構造及びその製造方法 |
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KR101239962B1 (ko) * | 2006-05-04 | 2013-03-06 | 삼성전자주식회사 | 하부 전극 상에 형성된 버퍼층을 포함하는 가변 저항메모리 소자 |
KR100785509B1 (ko) * | 2006-06-19 | 2007-12-13 | 한양대학교 산학협력단 | ReRAM 소자 및 그 제조 방법 |
KR100738116B1 (ko) | 2006-07-06 | 2007-07-12 | 삼성전자주식회사 | 가변 저항 물질을 포함하는 비휘발성 메모리 소자 |
US7932548B2 (en) * | 2006-07-14 | 2011-04-26 | 4D-S Pty Ltd. | Systems and methods for fabricating self-aligned memory cell |
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KR101206036B1 (ko) * | 2006-11-16 | 2012-11-28 | 삼성전자주식회사 | 전이 금속 고용체를 포함하는 저항성 메모리 소자 및 그제조 방법 |
KR100881292B1 (ko) * | 2007-01-23 | 2009-02-04 | 삼성전자주식회사 | 3차원 적층구조를 가지는 저항성 반도체 메모리 장치 및그의 제어방법 |
KR100850283B1 (ko) * | 2007-01-25 | 2008-08-04 | 삼성전자주식회사 | 3차원 적층구조를 가지는 저항성 반도체 메모리 장치 및그의 워드라인 디코딩 방법 |
KR100827448B1 (ko) * | 2007-02-16 | 2008-05-07 | 삼성전자주식회사 | 저항체를 이용한 비휘발성 메모리 장치 |
EP2132747B1 (en) * | 2007-03-31 | 2013-04-24 | Sandisk 3D LLC | Spatially distributed amplifier circuit |
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US7768812B2 (en) | 2008-01-15 | 2010-08-03 | Micron Technology, Inc. | Memory cells, memory cell programming methods, memory cell reading methods, memory cell operating methods, and memory devices |
US8034655B2 (en) | 2008-04-08 | 2011-10-11 | Micron Technology, Inc. | Non-volatile resistive oxide memory cells, non-volatile resistive oxide memory arrays, and methods of forming non-volatile resistive oxide memory cells and memory arrays |
US8211743B2 (en) | 2008-05-02 | 2012-07-03 | Micron Technology, Inc. | Methods of forming non-volatile memory cells having multi-resistive state material between conductive electrodes |
US8134137B2 (en) | 2008-06-18 | 2012-03-13 | Micron Technology, Inc. | Memory device constructions, memory cell forming methods, and semiconductor construction forming methods |
US9343665B2 (en) | 2008-07-02 | 2016-05-17 | Micron Technology, Inc. | Methods of forming a non-volatile resistive oxide memory cell and methods of forming a non-volatile resistive oxide memory array |
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2003
- 2003-11-24 US US10/720,890 patent/US7009278B2/en not_active Expired - Lifetime
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2004
- 2004-11-22 JP JP2004338192A patent/JP4986394B2/ja active Active
- 2004-11-23 KR KR1020040096540A patent/KR100618372B1/ko active IP Right Grant
- 2004-11-23 EP EP04027767A patent/EP1533815A3/en not_active Withdrawn
- 2004-11-24 TW TW093136168A patent/TWI286837B/zh not_active IP Right Cessation
- 2004-11-24 CN CNB2004100104312A patent/CN100382320C/zh not_active Expired - Fee Related
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2005
- 2005-10-12 US US11/249,881 patent/US7342824B2/en active Active
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2006
- 2006-06-26 KR KR1020060057544A patent/KR100685701B1/ko active IP Right Grant
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2011
- 2011-03-25 JP JP2011068801A patent/JP5216992B2/ja active Active
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Also Published As
Publication number | Publication date |
---|---|
US7342824B2 (en) | 2008-03-11 |
KR100685701B1 (ko) | 2007-02-26 |
TWI286837B (en) | 2007-09-11 |
JP4986394B2 (ja) | 2012-07-25 |
JP2011192380A (ja) | 2011-09-29 |
KR20050050044A (ko) | 2005-05-27 |
US20050110117A1 (en) | 2005-05-26 |
JP2005159359A (ja) | 2005-06-16 |
KR100618372B1 (ko) | 2006-08-30 |
US20060033182A1 (en) | 2006-02-16 |
EP1533815A2 (en) | 2005-05-25 |
KR20060084828A (ko) | 2006-07-25 |
JP5216992B2 (ja) | 2013-06-19 |
EP1533815A3 (en) | 2006-07-05 |
TW200539426A (en) | 2005-12-01 |
US7009278B2 (en) | 2006-03-07 |
CN1665030A (zh) | 2005-09-07 |
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