JP2011187863A - 配線基板及びその製造方法 - Google Patents
配線基板及びその製造方法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims description 38
- 239000000758 substrate Substances 0.000 claims abstract description 295
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims abstract description 102
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 83
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 83
- 239000004020 conductor Substances 0.000 claims abstract description 76
- 230000000149 penetrating effect Effects 0.000 claims abstract description 11
- 239000002131 composite material Substances 0.000 claims description 40
- 239000011347 resin Substances 0.000 claims description 38
- 229920005989 resin Polymers 0.000 claims description 38
- 230000003014 reinforcing effect Effects 0.000 claims description 32
- 238000000034 method Methods 0.000 claims description 24
- 238000007743 anodising Methods 0.000 claims description 8
- 230000002093 peripheral effect Effects 0.000 claims description 7
- 230000002787 reinforcement Effects 0.000 claims description 6
- 239000010410 layer Substances 0.000 description 183
- 239000011229 interlayer Substances 0.000 description 34
- 239000004065 semiconductor Substances 0.000 description 30
- 238000007747 plating Methods 0.000 description 22
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 11
- 229910000679 solder Inorganic materials 0.000 description 11
- 239000010949 copper Substances 0.000 description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 7
- 239000010936 titanium Substances 0.000 description 7
- 229910052802 copper Inorganic materials 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 229910052759 nickel Inorganic materials 0.000 description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- 238000009713 electroplating Methods 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- 239000002390 adhesive tape Substances 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 238000002048 anodisation reaction Methods 0.000 description 2
- 238000007772 electroless plating Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 230000035939 shock Effects 0.000 description 2
- 239000003351 stiffener Substances 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 239000011889 copper foil Substances 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
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- H05K3/4602—Manufacturing multilayer circuits characterized by a special circuit board as base or central core whereon additional circuit layers are built or additional circuit boards are laminated
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- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
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- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/16227—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bond pad of the item
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- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
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- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2924/15717—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400 C and less than 950 C
- H01L2924/15724—Aluminium [Al] as principal constituent
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Abstract
【解決手段】厚み方向に貫通する多数の貫通導体TCが設けられた酸化アルミニウム基板部10と、酸化アルミニウム基板部10の周囲に設けられた枠状のアルミニウム基板部10xとを備えた複合基板5と、貫通導体TCに接続されたn層(nは1以上の整数)の配線層BWとを含む。
【選択図】図8
Description
本発明の実施形態を説明する前に、本発明に関連する関連技術について説明する。図1〜図3は関連技術の配線基板の製造方法を示す断面図である。
図4〜図7は本発明の第1実施形態の配線基板の製造方法示す断面図、図8は同じく第1実施形態の配線基板を示す断面図、図9は同じく第1実施形態の半導体パッケージを示す断面図である。
図10は本発明の第2実施形態の配線基板の製造方法及び半導体パッケージを示す断面図である。
図11は本発明の第3実施形態の配線基板の製造方法及び半導体パッケージを示す断面図である。
図12は本発明の第4実施形態の配線基板の製造方法及び半導体パッケージを示す断面図である。
前述した第1〜図4実施形態では、複合基板5にビルドアップ配線層BWを作り込むことにより配線基板を製造している。その他の形態として、接続部を備えた配線部材を複合基板5と別に予め用意し、はんだなどの導電材で複合基板5の貫通導体TCに配線部材の接続部を接合することに基づいて配線部材(配線基板)を製造してもよい。
Claims (10)
- 厚み方向に貫通する多数の貫通導体が設けられた酸化アルミニウム基板部と、前記酸化アルミニウム基板部の周囲に設けられた枠状のアルミニウム基板部とを備えた複合基板と、
前記貫通導体に接続されたn層(nは1以上の整数)の配線層とを有することを特徴とする配線基板。 - 前記配線層と前記貫通導体との接続部において、前記配線層は複数の前記貫通導体に電気的に接続されていることを特徴とする請求項1に記載の配線基板。
- 前記配線層は、前記酸化アルミニウム基板部に対応する部分に配置されて前記貫通導体に接続される配線部と、前記アルミニウム基板部に対応する部分に配置されて前記配線部と分離された基板補強用電極部とを含むことを特徴とする請求項1に記載の配線基板。
- 前記基板補強用電極部はリング状に繋がって配置されていることを特徴とする請求項3に記載の配線基板。
- 厚み方向に貫通する多数の貫通導体が設けられた複数の酸化アルミニウム基板部と、前記複数の酸化アルミニウム基板部を連結するアルミニウム基板部とを備える複合基板を用意する工程と、
前記貫通導体に接続されるn層(nは1以上の整数)の配線層を形成する工程とを有することを特徴とする配線基板の製造方法。 - 前記配線層と前記貫通導体との接続部において、前記配線層が複数の前記貫通導体に電気的に接続されることを特徴とする請求項5に記載の配線基板の製造方法。
- 前記複合基板を用意する工程は、
アルミニウム基板の上に、前記酸化アルミニウム基板部を得る領域に開口部が設けられた絶縁樹脂層を形成する工程と、
前記絶縁樹脂層の開口部を通して前記アルミニウム基板を厚み方向に陽極酸化することにより、多数のホールが設けられた前記酸化アルミニウム基板部を得る工程と、
前記酸化アルミニウム基板部の下側のアルミニウム部を前記ホールが露出するまで除去することにより、厚み方向に貫通する多数のスルーホールが設けられた前記酸化アルミニウム基板部とそれに連結される前記アルミニウム基板部とを得る工程と、
前記スルーホールに前記貫通導体を充填する工程とを含むことを特徴とする請求項5に記載の配線基板の製造方法。 - 前記配線層を形成する工程において、
前記配線層は、前記酸化アルミニウム基板部に対応する部分に配置されて前記貫通導体に接続される配線部と、前記アルミニウム基板部に対応する部分に配置されて前記配線部と分離された基板補強用電極部とを含んで形成されることを特徴とする請求項5に配線基板の製造方法。 - 前記配線層を形成する工程において、
前記基板補強用電極部は前記酸化アルミニウム基板部を取り囲むようにして繋がって配置されることを特徴とする請求項8に記載の配線基板の製造方法。 - 前記配線層を形成する工程の後に、
前記アルミニウム基板部に対応する部分を切断することにより、周縁側に枠状のアルミニウム基板部を備えた個々の配線基板を得る工程をさらに有することを特徴とする請求項5乃至9のいずれか一項に記載の配線基板の製造方法。
Priority Applications (2)
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JP2010054149A JP5363384B2 (ja) | 2010-03-11 | 2010-03-11 | 配線基板及びその製造方法 |
US13/032,071 US8729401B2 (en) | 2010-03-11 | 2011-02-22 | Wiring substrate and method of manufacturing the same |
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JP2010054149A JP5363384B2 (ja) | 2010-03-11 | 2010-03-11 | 配線基板及びその製造方法 |
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JP2011187863A true JP2011187863A (ja) | 2011-09-22 |
JP2011187863A5 JP2011187863A5 (ja) | 2013-01-31 |
JP5363384B2 JP5363384B2 (ja) | 2013-12-11 |
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JP2016195238A (ja) * | 2015-03-31 | 2016-11-17 | 新光電気工業株式会社 | 配線基板及び半導体パッケージ |
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CN203151864U (zh) * | 2013-03-05 | 2013-08-21 | 奥特斯(中国)有限公司 | 印制电路板 |
US9226396B2 (en) | 2013-03-12 | 2015-12-29 | Invensas Corporation | Porous alumina templates for electronic packages |
JP5873152B1 (ja) * | 2014-09-29 | 2016-03-01 | 日本特殊陶業株式会社 | 配線基板 |
US9960120B2 (en) * | 2015-03-31 | 2018-05-01 | Shinko Electric Industries Co., Ltd. | Wiring substrate with buried substrate having linear conductors |
JP6741456B2 (ja) * | 2016-03-31 | 2020-08-19 | Fdk株式会社 | 多層回路基板 |
TWI655739B (zh) * | 2018-04-19 | 2019-04-01 | 南亞電路板股份有限公司 | 封裝結構及其形成方法 |
CN113013125A (zh) * | 2019-12-20 | 2021-06-22 | 奥特斯奥地利科技与系统技术有限公司 | 嵌入有在侧向上位于堆叠体的导电结构之间的内插件的部件承载件 |
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