JP2011142310A - 半導体装置およびその作製方法 - Google Patents
半導体装置およびその作製方法 Download PDFInfo
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- JP2011142310A JP2011142310A JP2010273185A JP2010273185A JP2011142310A JP 2011142310 A JP2011142310 A JP 2011142310A JP 2010273185 A JP2010273185 A JP 2010273185A JP 2010273185 A JP2010273185 A JP 2010273185A JP 2011142310 A JP2011142310 A JP 2011142310A
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- oxide semiconductor
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- oxide
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- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 150000003608 titanium Chemical class 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- OYQCBJZGELKKPM-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O-2].[Zn+2].[O-2].[In+3] OYQCBJZGELKKPM-UHFFFAOYSA-N 0.000 description 1
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- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
- H01L29/78693—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate the semiconducting oxide being amorphous
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
Abstract
【解決手段】表面と略垂直な方向にc軸が配向する結晶領域を有する酸化物半導体層を形成し、酸化物半導体層上に接する酸化物絶縁層を形成し、第3の加熱処理を行うことにより、酸化物半導体層に酸素を供給し、酸化物絶縁層上に、水素を含む窒化物絶縁層を形成し、第4の加熱処理を行うことにより、少なくとも酸化物半導体層と酸化物絶縁層の界面に水素を供給する。
【選択図】図3
Description
本実施の形態では、開示する発明の一態様に係る半導体装置の構成および作製方法について、図1乃至図4を参照して説明する。
実施の形態1ではトップゲート型のトランジスタの作製例を示したが、本実施の形態では、ボトムゲート型のトランジスタの作製例について説明する。
本実施の形態では、チャネルストップ型のトランジスタの例を図6を用いて示す。
本実施の形態では、先の実施の形態において説明した半導体装置を半導体集積回路に用いる場合の一例として、先の実施の形態において説明した半導体装置と別の半導体材料を用いた半導体装置との積層構造を有する半導体装置について、図7を参照して説明する。
本実施の形態では、開示する発明の一態様に係る半導体装置の具体例として、記憶装置として機能する半導体装置の構成例を説明する。なお、ここでは、酸化物半導体を用いたトランジスタと、酸化物半導体以外の材料(例えば、シリコン)を用いたトランジスタと、を含む半導体装置について説明する。
本実施の形態では、c軸配向した酸化物半導体層を含むトランジスタを作製し、該トランジスタを画素部、さらには駆動回路に用いて表示機能を有する半導体装置(表示装置ともいう)を作製する場合について説明する。また、駆動回路の一部または全部を、画素部と同じ基板上に一体形成し、システムオンパネルを形成することができる。
半導体装置の一形態に相当する発光表示パネル(発光パネルともいう)の外観及び断面について、図10を用いて説明する。図10(A)は、第1の基板上に形成されたc軸配向した酸化物半導体層を含むトランジスタ及び発光素子を、第2の基板との間にシール材によって封止した、パネルの平面図であり、図10(B)は、図10(A)のH−Iにおける断面図に相当する。
半導体装置の一形態として電子ペーパーの例を示す。
本明細書に開示する半導体装置は、さまざまな電子機器(遊技機も含む)に適用することができる。電子機器としては、例えば、テレビジョン装置(テレビ、またはテレビジョン受信機ともいう)、コンピュータ用などのモニタ、デジタルカメラやデジタルビデオカメラなどのカメラ、デジタルフォトフレーム、携帯電話機(携帯電話、携帯電話装置ともいう)、携帯型ゲーム機、携帯情報端末、音響再生装置、パチンコ機などの大型ゲーム機などが挙げられる。
102 絶縁層
104 第1の酸化物半導体層
104a 島状の第1の酸化物半導体層
105 第2の酸化物半導体層
106 第2の酸化物半導体層
106a 島状の第2の酸化物半導体層
108 導電層
108a ソース電極層
108b ドレイン電極層
112 ゲート絶縁層
114 ゲート電極層
116 層間絶縁層
118 層間絶縁層
150 トランジスタ
200 基板
206 素子分離絶縁層
208a ゲート絶縁層
210a ゲート電極層
214 不純物領域
216 チャネル形成領域
218 サイドウォール絶縁層
220 高濃度不純物領域
224 金属化合物領域
226 層間絶縁層
228 層間絶縁層
230a ソース電極層またはドレイン電極層
230b ソース電極層またはドレイン電極層
230c 電極
234 絶縁層
236a 電極
236b 電極
236c 電極
250 トランジスタ
254a 電極
254b 電極
254c 電極
254d 電極
254e 電極
256 絶縁層
258a 電極
258b 電極
258c 電極
258d 電極
300 トランジスタ
302 トランジスタ
400 基板
401 ゲート電極層
402 ゲート絶縁層
404 第1の酸化物半導体層
404a 島状の第1の酸化物半導体層
406 第2の酸化物半導体層
406a 島状の第2の酸化物半導体層
408a ソース電極層
408b ドレイン電極層
412 酸化物絶縁層
414 電極層
416 層間絶縁層
418 層間絶縁層
450 トランジスタ
451 トランジスタ
500 基板
501 ゲート電極層
502 ゲート絶縁層
504a 島状の第1の酸化物半導体層
506a 島状の第2の酸化物半導体層
508a ソース電極層
508b ドレイン電極層
516 層間絶縁層
518 層間絶縁層
520 島状の酸化物絶縁層
550 トランジスタ
580 第1の基板
581 トランジスタ
583 絶縁層
584 絶縁層
585 絶縁層
587 第1の電極層
588 第2の電極層
590a 黒色領域
590b 白色領域
594 キャビティ
595 充填材
596 第2の基板
2700 電子書籍
2701 筐体
2703 筐体
2705 表示部
2707 表示部
2711 軸部
2721 電源
2723 操作キー
2725 スピーカー
2800 筐体
2801 筐体
2802 表示パネル
2803 スピーカー
2804 マイクロフォン
2805 操作キー
2806 ポインティングデバイス
2807 カメラ用レンズ
2808 外部接続端子
2810 太陽電池セル
2811 外部メモリスロット
3001 本体
3002 筐体
3003 表示部
3004 キーボード
3021 本体
3022 スタイラス
3023 表示部
3024 操作ボタン
3025 外部インターフェイス
3051 本体
3053 接眼部
3054 操作スイッチ
3055 表示部(B)
3056 バッテリー
3057 表示部(A)
4001 第1の基板
4002 画素部
4003 信号線駆動回路
4004 走査線駆動回路
4005 シール材
4006 第2の基板
4008 液晶層
4010 トランジスタ
4011 トランジスタ
4013 液晶素子
4014 絶縁層
4015 接続端子電極
4016 端子電極
4018 FPC
4019 異方性導電層
4020 絶縁層
4021 絶縁層
4030 画素電極層
4031 対向電極層
4032 絶縁層
4033 絶縁層
4035 スペーサ
4040 導電層
4501 第1の基板
4502 画素部
4503a 信号線駆動回路
4503b 信号線駆動回路
4504a 走査線駆動回路
4504b 走査線駆動回路
4505 シール材
4506 第2の基板
4507 充填材
4509 トランジスタ
4510 トランジスタ
4511 発光素子
4512 電界発光層
4513 第2の電極層
4514 保護絶縁層
4515 接続端子電極
4516 端子電極
4517 第1の電極層
4518a FPC
4518b FPC
4519 異方性導電層
4520 隔壁
4540 導電層
4541 絶縁層
4544 絶縁層
9600 テレビジョン装置
9601 筐体
9603 表示部
9605 スタンド
9607 表示部
9609 操作キー
9610 リモコン操作機
Claims (8)
- 絶縁表面を有する基板上に第1の酸化物半導体層を形成し、
第1の加熱処理を行うことにより、前記第1の酸化物半導体層の表面から内部に向かって結晶成長し、該表面と略垂直な方向にc軸が配向する結晶領域を形成し、
前記第1の酸化物半導体層上に第2の酸化物半導体層を形成し、
第2の加熱処理を行うことにより、前記結晶領域から結晶成長させて前記第2の酸化物半導体層の少なくとも一部を結晶化し、
前記第2の酸化物半導体層上に導電層を形成し、
前記導電層をエッチングすることにより、ソース電極層およびドレイン電極層を形成し、
前記第2の酸化物半導体層、前記ソース電極層、および前記ドレイン電極層を覆うように酸化物絶縁層を形成し、
第3の加熱処理を行うことにより、前記第2の酸化物半導体層に酸素を供給し、
前記酸化物絶縁層上の前記第2の酸化物半導体層と重畳する領域にゲート電極層を形成し、
前記酸化物絶縁層および前記ゲート電極層上に、水素を含む窒化物絶縁層を形成し、
第4の加熱処理を行うことにより、少なくとも前記第2の酸化物半導体層と前記酸化物絶縁層の界面に水素を供給する半導体装置の作製方法。 - 絶縁表面を有する基板上にゲート電極層を形成し、
前記ゲート電極層を覆うように第1の酸化物絶縁層を形成し、
前記ゲート電極層および前記第1の酸化物絶縁層上に第1の酸化物半導体層を形成し、
第1の加熱処理を行うことにより、前記第1の酸化物半導体層の表面から内部に向かって結晶成長し、該表面と略垂直な方向にc軸が配向する結晶領域を形成し、
前記第1の酸化物半導体層上に第2の酸化物半導体層を形成し、
第2の加熱処理を行うことにより、前記結晶領域から結晶成長させて前記第2の酸化物半導体層の少なくとも一部を結晶化し、
前記第2の酸化物半導体層上に導電層を形成し、
前記導電層をエッチングすることにより、ソース電極層およびドレイン電極層を形成し、
前記第2の酸化物半導体層、前記ソース電極層、および前記ドレイン電極層を覆うように第2の酸化物絶縁層を形成し、
第3の加熱処理を行うことにより、前記第2の酸化物半導体層に酸素を供給し、
前記第2の酸化物絶縁層上に、水素を含む窒化物絶縁層を形成し、
第4の加熱処理を行うことにより、少なくとも前記第1の酸化物半導体層と前記第1の酸化物絶縁層の界面に水素を供給する半導体装置の作製方法。 - 請求項1または請求項2において、前記第1の加熱処理は、450℃以上850℃以下の温度であり、窒素雰囲気、酸素雰囲気、または乾燥空気雰囲気での加熱であることを特徴とする半導体装置の作製方法。
- 請求項1乃至請求項3のいずれか一において、前記第2の加熱処理は、450℃以上850℃以下の温度であり、窒素雰囲気、酸素雰囲気、または乾燥空気雰囲気での加熱であることを特徴とする半導体装置の作製方法。
- 請求項1乃至請求項4のいずれか一において、前記第3の加熱処理は、200℃以上450℃以下での加熱であることを特徴とする半導体装置の作製方法。
- 請求項1乃至請求項5のいずれか一において、前記第4の加熱処理は、150℃以上450℃以下での加熱であることを特徴とする半導体装置の作製方法。
- 絶縁表面を有する基板上に、表面に対して垂直方向にc軸配向をしている第1の酸化物半導体層と、
前記第1の酸化物半導体層上に接し、且つ、表面に対して垂直方向にc軸配向をしている第2の酸化物半導体層と、
前記第1の酸化物半導体層及び前記第2の酸化物半導体層の積層上にソース電極層またはドレイン電極層と、
前記第2の酸化物半導体層上に接する酸化物絶縁層と、
前記酸化物絶縁層上にゲート電極層と、
前記ゲート電極層上に水素を含む窒化物絶縁層とを有する半導体装置。 - 絶縁表面を有する基板上に平坦表面を有するゲート電極層と、
前記ゲート電極層上にゲート絶縁層と、
前記ゲート絶縁層上に少なくとも一部接し、且つ、表面に対して垂直方向にc軸配向をしている第1の酸化物半導体層と、
前記第1の酸化物半導体層上に接し、且つ、表面に対して垂直方向にc軸配向をしている第2の酸化物半導体層と、
前記第1の酸化物半導体層及び前記第2の酸化物半導体層の積層上にソース電極層またはドレイン電極層と、
前記第2の酸化物半導体層上に接する酸化物絶縁層と、
前記酸化物絶縁層上に接する水素を含む窒化物絶縁層とを有する半導体装置。
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JP2020074417A (ja) * | 2011-06-17 | 2020-05-14 | 株式会社半導体エネルギー研究所 | 半導体装置 |
US9818849B2 (en) | 2011-06-17 | 2017-11-14 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device with conductive film in opening through multiple insulating films |
JP2017050551A (ja) * | 2011-06-17 | 2017-03-09 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP2013021305A (ja) * | 2011-06-17 | 2013-01-31 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
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JP2013232689A (ja) * | 2011-12-23 | 2013-11-14 | Semiconductor Energy Lab Co Ltd | 半導体素子 |
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JP2013153148A (ja) * | 2011-12-27 | 2013-08-08 | Semiconductor Energy Lab Co Ltd | 半導体装置及びその作製方法 |
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KR20140118691A (ko) * | 2013-03-29 | 2014-10-08 | 엘지디스플레이 주식회사 | 박막 트랜지스터, 박막 트랜지스터 제조 방법 및 박막 트랜지스터를 포함하는 표시 장치 |
JP2015188054A (ja) * | 2013-10-22 | 2015-10-29 | 株式会社半導体エネルギー研究所 | 表示装置 |
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WO2022176484A1 (ja) * | 2021-02-17 | 2022-08-25 | 株式会社ジャパンディスプレイ | 半導体装置 |
Also Published As
Publication number | Publication date |
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JP2019216257A (ja) | 2019-12-19 |
KR20120092696A (ko) | 2012-08-21 |
JP5127999B1 (ja) | 2013-01-23 |
TWI569450B (zh) | 2017-02-01 |
KR101835300B1 (ko) | 2018-03-08 |
JP5707117B2 (ja) | 2015-04-22 |
US9040989B2 (en) | 2015-05-26 |
JP2021141333A (ja) | 2021-09-16 |
TW201342621A (zh) | 2013-10-16 |
US20130015438A1 (en) | 2013-01-17 |
TWI550860B (zh) | 2016-09-21 |
KR101945171B1 (ko) | 2019-02-07 |
TWI501400B (zh) | 2015-09-21 |
JP2013021341A (ja) | 2013-01-31 |
JP6302584B2 (ja) | 2018-03-28 |
JP2016048798A (ja) | 2016-04-07 |
JP2018107470A (ja) | 2018-07-05 |
US20140008648A1 (en) | 2014-01-09 |
WO2011070900A1 (en) | 2011-06-16 |
KR20180023018A (ko) | 2018-03-06 |
US8293661B2 (en) | 2012-10-23 |
US8558233B2 (en) | 2013-10-15 |
JP2015144296A (ja) | 2015-08-06 |
TW201135937A (en) | 2011-10-16 |
JP2017135393A (ja) | 2017-08-03 |
KR20130082181A (ko) | 2013-07-18 |
KR101470303B1 (ko) | 2014-12-09 |
JP2022179522A (ja) | 2022-12-02 |
TW201539764A (zh) | 2015-10-16 |
JP6043384B2 (ja) | 2016-12-14 |
US20110133180A1 (en) | 2011-06-09 |
JP6104351B2 (ja) | 2017-03-29 |
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