JP2011034636A5 - - Google Patents

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Publication number
JP2011034636A5
JP2011034636A5 JP2009180502A JP2009180502A JP2011034636A5 JP 2011034636 A5 JP2011034636 A5 JP 2011034636A5 JP 2009180502 A JP2009180502 A JP 2009180502A JP 2009180502 A JP2009180502 A JP 2009180502A JP 2011034636 A5 JP2011034636 A5 JP 2011034636A5
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JP
Japan
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match line
match
memory cells
memory
search data
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JP2009180502A
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English (en)
Japanese (ja)
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JP2011034636A (ja
JP5477621B2 (ja
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Priority claimed from JP2009180502A external-priority patent/JP5477621B2/ja
Priority to JP2009180502A priority Critical patent/JP5477621B2/ja
Priority to CN201010238029.5A priority patent/CN101989452B/zh
Priority to CN201410009119.5A priority patent/CN103730156B/zh
Priority to US12/849,384 priority patent/US8902624B2/en
Publication of JP2011034636A publication Critical patent/JP2011034636A/ja
Publication of JP2011034636A5 publication Critical patent/JP2011034636A5/ja
Priority to US13/536,533 priority patent/US8441828B2/en
Publication of JP5477621B2 publication Critical patent/JP5477621B2/ja
Application granted granted Critical
Priority to US14/529,074 priority patent/US9142295B2/en
Priority to US14/850,723 priority patent/US20160005465A1/en
Active legal-status Critical Current
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JP2009180502A 2009-08-03 2009-08-03 連想メモリ Active JP5477621B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2009180502A JP5477621B2 (ja) 2009-08-03 2009-08-03 連想メモリ
CN201010238029.5A CN101989452B (zh) 2009-08-03 2010-07-26 内容可寻址存储器
CN201410009119.5A CN103730156B (zh) 2009-08-03 2010-07-26 内容可寻址存储器
US12/849,384 US8902624B2 (en) 2009-08-03 2010-08-03 Content addressable memory
US13/536,533 US8441828B2 (en) 2009-08-03 2012-06-28 Content addressable memory
US14/529,074 US9142295B2 (en) 2009-08-03 2014-10-30 Content addressable memory
US14/850,723 US20160005465A1 (en) 2009-08-03 2015-09-10 Content addressable memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009180502A JP5477621B2 (ja) 2009-08-03 2009-08-03 連想メモリ

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2013041776A Division JP5480986B2 (ja) 2013-03-04 2013-03-04 連想メモリ

Publications (3)

Publication Number Publication Date
JP2011034636A JP2011034636A (ja) 2011-02-17
JP2011034636A5 true JP2011034636A5 (cg-RX-API-DMAC7.html) 2012-04-12
JP5477621B2 JP5477621B2 (ja) 2014-04-23

Family

ID=43526836

Family Applications (1)

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JP2009180502A Active JP5477621B2 (ja) 2009-08-03 2009-08-03 連想メモリ

Country Status (3)

Country Link
US (4) US8902624B2 (cg-RX-API-DMAC7.html)
JP (1) JP5477621B2 (cg-RX-API-DMAC7.html)
CN (2) CN101989452B (cg-RX-API-DMAC7.html)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
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US20130170273A1 (en) * 2011-12-29 2013-07-04 Lsi Corporation Content-Addressable Memory Architecture for Routing Raw Hit Lines Using Minimal Base Metal Layers
US8675427B2 (en) 2012-03-07 2014-03-18 International Business Machines Corporation Implementing RC and coupling delay correction for SRAM
JP5893465B2 (ja) * 2012-03-27 2016-03-23 ルネサスエレクトロニクス株式会社 連想記憶装置
US8964496B2 (en) 2013-07-26 2015-02-24 Micron Technology, Inc. Apparatuses and methods for performing compare operations using sensing circuitry
JP6533129B2 (ja) * 2015-08-28 2019-06-19 ルネサスエレクトロニクス株式会社 半導体装置
US9536608B1 (en) * 2015-11-17 2017-01-03 International Business Machines Corporation Content addressable memory device
CN107342102B (zh) * 2016-04-29 2021-04-27 上海磁宇信息科技有限公司 一种具有搜索功能的mram芯片及搜索方法
CN106205687B (zh) * 2016-06-30 2018-06-05 湖南恒茂高科股份有限公司 存储器及其搜索控制电路
KR20180028020A (ko) * 2016-09-07 2018-03-15 르네사스 일렉트로닉스 가부시키가이샤 반도체 장치
JP2018206452A (ja) * 2017-05-30 2018-12-27 ルネサスエレクトロニクス株式会社 内容参照メモリ及び半導体装置
KR102379729B1 (ko) * 2017-10-27 2022-03-29 삼성전자주식회사 우선 순위에 따라 매칭 라인들을 구동하는 메모리 장치
JP2019117678A (ja) 2017-12-27 2019-07-18 ルネサスエレクトロニクス株式会社 半導体装置
US10951146B1 (en) 2019-09-09 2021-03-16 Karma Automotive Llc Method to improve output current harmonic distribution in a segmented drive system
CN110993005B (zh) * 2019-12-11 2021-03-26 海光信息技术股份有限公司 电路结构、芯片、训练方法及训练装置
JP7431107B2 (ja) * 2020-06-01 2024-02-14 ルネサスエレクトロニクス株式会社 半導体装置
TWI758188B (zh) * 2021-02-02 2022-03-11 旺宏電子股份有限公司 記憶體裝置及其操作方法
TWI782652B (zh) * 2021-08-04 2022-11-01 新唐科技股份有限公司 格式設定系統及可定址發光裝置

Family Cites Families (24)

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Publication number Priority date Publication date Assignee Title
US5706224A (en) * 1996-10-10 1998-01-06 Quality Semiconductor, Inc. Content addressable memory and random access memory partition circuit
JP3862346B2 (ja) 1997-03-13 2006-12-27 富士通株式会社 駆動回路及びそれを利用した半導体記憶装置
JP3190868B2 (ja) * 1997-11-21 2001-07-23 エヌイーシーマイクロシステム株式会社 連想メモリ装置
JP4732596B2 (ja) * 2000-03-03 2011-07-27 川崎マイクロエレクトロニクス株式会社 連想メモリ装置
JP4492897B2 (ja) 2000-06-15 2010-06-30 ルネサスエレクトロニクス株式会社 半導体記憶装置
JP4511790B2 (ja) 2001-01-10 2010-07-28 富士通セミコンダクター株式会社 連想記憶装置
US6781857B1 (en) * 2002-02-27 2004-08-24 Integrated Device Technology, Inc. Content addressable memory (CAM) devices that utilize multi-port CAM cells and control logic to support multiple overlapping search cycles that are asynchronously timed relative to each other
JP4149296B2 (ja) * 2003-03-26 2008-09-10 株式会社ルネサステクノロジ 半導体記憶装置
KR100518599B1 (ko) * 2003-11-03 2005-10-04 삼성전자주식회사 우선 순위 엔코더의 결함 여부 테스트가 가능한 캠 및우선 순위 엔코더의 결함 여부 테스트 방법
WO2005050663A1 (ja) 2003-11-21 2005-06-02 Hitachi, Ltd. 半導体集積回路装置
KR100532508B1 (ko) * 2004-03-12 2005-11-30 삼성전자주식회사 고속 동작이 가능한 캠
US7260674B2 (en) * 2004-05-25 2007-08-21 Intel Corporation Programmable parallel lookup memory
JP2005353238A (ja) * 2004-06-14 2005-12-22 Renesas Technology Corp 連想メモリ
US7505295B1 (en) * 2004-07-01 2009-03-17 Netlogic Microsystems, Inc. Content addressable memory with multi-row write function
JP2006059479A (ja) * 2004-08-23 2006-03-02 Renesas Technology Corp 連想記憶装置
JP4861012B2 (ja) * 2005-03-31 2012-01-25 ルネサスエレクトロニクス株式会社 Ｃａｍ装置
JP4624198B2 (ja) * 2005-07-06 2011-02-02 ルネサスエレクトロニクス株式会社 半導体記憶装置
JP4738112B2 (ja) * 2005-09-12 2011-08-03 ルネサスエレクトロニクス株式会社 半導体記憶装置
US7577785B2 (en) * 2005-09-30 2009-08-18 Qualcomm Incorporated Content addressable memory with mixed serial and parallel search
US20070247885A1 (en) * 2006-04-25 2007-10-25 Renesas Technology Corp. Content addressable memory
US8169808B2 (en) * 2008-01-25 2012-05-01 Micron Technology, Inc. NAND flash content addressable memory
JP5140849B2 (ja) * 2008-02-13 2013-02-13 ルネサスエレクトロニクス株式会社 内容参照メモリ
US7881090B2 (en) 2009-03-16 2011-02-01 Netlogic Microsystems, Inc. Content addressable memory (CAM) array capable of implementing read or write operations during search operations
US8320148B1 (en) 2009-06-25 2012-11-27 Adesto Technologies Corporation PMC-based non-volatile CAM

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