JP2011522348A5 - - Google Patents

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Publication number
JP2011522348A5
JP2011522348A5 JP2011511667A JP2011511667A JP2011522348A5 JP 2011522348 A5 JP2011522348 A5 JP 2011522348A5 JP 2011511667 A JP2011511667 A JP 2011511667A JP 2011511667 A JP2011511667 A JP 2011511667A JP 2011522348 A5 JP2011522348 A5 JP 2011522348A5
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Japan
Prior art keywords
node
memory cell
circuit
sensing
sensing circuit
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JP2011511667A
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English (en)
Japanese (ja)
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JP2011522348A (ja
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Priority claimed from US12/128,535 external-priority patent/US7957197B2/en
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Publication of JP2011522348A publication Critical patent/JP2011522348A/ja
Publication of JP2011522348A5 publication Critical patent/JP2011522348A5/ja
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JP2011511667A 2008-05-28 2009-04-01 不揮発性メモリのための高速センスアンプアレイおよび方法 Pending JP2011522348A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/128,535 2008-05-28
US12/128,535 US7957197B2 (en) 2008-05-28 2008-05-28 Nonvolatile memory with a current sense amplifier having a precharge circuit and a transfer gate coupled to a sense node
PCT/US2009/039082 WO2009146057A1 (en) 2008-05-28 2009-04-01 High speed sense amplifier array and method for nonvolatile memory

Publications (2)

Publication Number Publication Date
JP2011522348A JP2011522348A (ja) 2011-07-28
JP2011522348A5 true JP2011522348A5 (cg-RX-API-DMAC7.html) 2012-05-24

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JP2011511667A Pending JP2011522348A (ja) 2008-05-28 2009-04-01 不揮発性メモリのための高速センスアンプアレイおよび方法

Country Status (7)

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US (2) US7957197B2 (cg-RX-API-DMAC7.html)
EP (1) EP2289070B1 (cg-RX-API-DMAC7.html)
JP (1) JP2011522348A (cg-RX-API-DMAC7.html)
KR (1) KR101468886B1 (cg-RX-API-DMAC7.html)
CN (1) CN102113057B (cg-RX-API-DMAC7.html)
TW (1) TWI397921B (cg-RX-API-DMAC7.html)
WO (1) WO2009146057A1 (cg-RX-API-DMAC7.html)

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