JP2011522348A - 不揮発性メモリのための高速センスアンプアレイおよび方法 - Google Patents

不揮発性メモリのための高速センスアンプアレイおよび方法 Download PDF

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Publication number
JP2011522348A
JP2011522348A JP2011511667A JP2011511667A JP2011522348A JP 2011522348 A JP2011522348 A JP 2011522348A JP 2011511667 A JP2011511667 A JP 2011511667A JP 2011511667 A JP2011511667 A JP 2011511667A JP 2011522348 A JP2011522348 A JP 2011522348A
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Prior art keywords
node
memory cell
sensing
circuit
memory cells
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Pending
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JP2011511667A
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Japanese (ja)
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JP2011522348A5 (cg-RX-API-DMAC7.html
Inventor
タイ グエン，ハオ
ラング ムイ，マン
リー，ソンピル
チャン，ファンリン
ワング，チー−ミン
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SanDisk Corp
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SanDisk Corp
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Publication of JP2011522348A publication Critical patent/JP2011522348A/ja
Publication of JP2011522348A5 publication Critical patent/JP2011522348A5/ja
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5642—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/06—Arrangements for interconnecting storage elements electrically, e.g. by wiring
    • G11C5/063—Voltage and signal distribution in integrated semi-conductor memory access lines, e.g. word-line, bit-line, cross-over resistance, propagation delay
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/02—Arrangements for writing information into, or reading information out from, a digital store with means for avoiding parasitic signals
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/563—Multilevel memory reading aspects
    • G11C2211/5634—Reference cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)
JP2011511667A 2008-05-28 2009-04-01 不揮発性メモリのための高速センスアンプアレイおよび方法 Pending JP2011522348A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/128,535 2008-05-28
US12/128,535 US7957197B2 (en) 2008-05-28 2008-05-28 Nonvolatile memory with a current sense amplifier having a precharge circuit and a transfer gate coupled to a sense node
PCT/US2009/039082 WO2009146057A1 (en) 2008-05-28 2009-04-01 High speed sense amplifier array and method for nonvolatile memory

Publications (2)

Publication Number Publication Date
JP2011522348A true JP2011522348A (ja) 2011-07-28
JP2011522348A5 JP2011522348A5 (cg-RX-API-DMAC7.html) 2012-05-24

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JP2011511667A Pending JP2011522348A (ja) 2008-05-28 2009-04-01 不揮発性メモリのための高速センスアンプアレイおよび方法

Country Status (7)

Country Link
US (2) US7957197B2 (cg-RX-API-DMAC7.html)
EP (1) EP2289070B1 (cg-RX-API-DMAC7.html)
JP (1) JP2011522348A (cg-RX-API-DMAC7.html)
KR (1) KR101468886B1 (cg-RX-API-DMAC7.html)
CN (1) CN102113057B (cg-RX-API-DMAC7.html)
TW (1) TWI397921B (cg-RX-API-DMAC7.html)
WO (1) WO2009146057A1 (cg-RX-API-DMAC7.html)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011146100A (ja) * 2010-01-15 2011-07-28 Toshiba Corp 半導体記憶装置及びその読出し方法
JP2021527294A (ja) * 2018-06-15 2021-10-11 シリコン ストーリッジ テクノロージー インコーポレイテッドＳｉｌｉｃｏｎ Ｓｔｏｒａｇｅ Ｔｅｃｈｎｏｌｏｇｙ， Ｉｎｃ． フラッシュメモリシステム用の改良されたセンスアンプ

Families Citing this family (53)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104282086A (zh) 2007-01-09 2015-01-14 功率监视器公司 用于智能电路断路器的方法和设备
US9202383B2 (en) 2008-03-04 2015-12-01 Power Monitors, Inc. Method and apparatus for a voice-prompted electrical hookup
US7957197B2 (en) * 2008-05-28 2011-06-07 Sandisk Corporation Nonvolatile memory with a current sense amplifier having a precharge circuit and a transfer gate coupled to a sense node
US8710907B2 (en) 2008-06-24 2014-04-29 Sandisk Technologies Inc. Clock generator circuit for a charge pump
US8446773B2 (en) * 2009-02-25 2013-05-21 Samsung Electronics Co., Ltd. Memory system and programming method thereof
US8339183B2 (en) 2009-07-24 2012-12-25 Sandisk Technologies Inc. Charge pump with reduced energy consumption through charge sharing and clock boosting suitable for high voltage word line in flash memories
US8773108B2 (en) 2009-11-10 2014-07-08 Power Monitors, Inc. System, method, and apparatus for a safe powerline communications instrumentation front-end
KR101094944B1 (ko) * 2009-12-24 2011-12-15 주식회사 하이닉스반도체 센싱 전압을 제어하는 비휘발성 반도체 집적 회로
US10060957B2 (en) 2010-07-29 2018-08-28 Power Monitors, Inc. Method and apparatus for a cloud-based power quality monitor
EP2413105B1 (en) 2010-07-29 2017-07-05 Power Monitors, Inc. Method and apparatus for a demand management monitoring system
US8294509B2 (en) 2010-12-20 2012-10-23 Sandisk Technologies Inc. Charge pump systems with reduction in inefficiencies due to charge sharing between capacitances
US8339185B2 (en) 2010-12-20 2012-12-25 Sandisk 3D Llc Charge pump system that dynamically selects number of active stages
CN102881331A (zh) * 2011-07-15 2013-01-16 复旦大学 灵敏放大器的控制电路及包括其的dram
US8699247B2 (en) 2011-09-09 2014-04-15 Sandisk Technologies Inc. Charge pump system dynamically reconfigurable for read and program
US8514628B2 (en) 2011-09-22 2013-08-20 Sandisk Technologies Inc. Dynamic switching approach to reduce area and power consumption of high voltage charge pumps
US8400212B1 (en) 2011-09-22 2013-03-19 Sandisk Technologies Inc. High voltage charge pump regulation system with fine step adjustment
WO2013058960A2 (en) 2011-10-20 2013-04-25 Sandisk Technologies Inc. Compact sense amplifier for non-volatile memory
US8630120B2 (en) 2011-10-20 2014-01-14 Sandisk Technologies Inc. Compact sense amplifier for non-volatile memory
US8705293B2 (en) 2011-10-20 2014-04-22 Sandisk Technologies Inc. Compact sense amplifier for non-volatile memory suitable for quick pass write
TWI463497B (zh) * 2011-11-09 2014-12-01 Macronix Int Co Ltd 記憶體存取方法及應用其之快閃記憶體
US8971141B2 (en) * 2012-06-28 2015-03-03 Sandisk Technologies Inc. Compact high speed sense amplifier for non-volatile memory and hybrid lockout
US9293195B2 (en) 2012-06-28 2016-03-22 Sandisk Technologies Inc. Compact high speed sense amplifier for non-volatile memory
US20140003176A1 (en) * 2012-06-28 2014-01-02 Man Lung Mui Compact High Speed Sense Amplifier for Non-Volatile Memory with Reduced layout Area and Power Consumption
US9257154B2 (en) 2012-11-29 2016-02-09 Micron Technology, Inc. Methods and apparatuses for compensating for source voltage
KR20140081027A (ko) * 2012-12-21 2014-07-01 에스케이하이닉스 주식회사 비휘발성 메모리 장치
JP2014186777A (ja) * 2013-03-22 2014-10-02 Toshiba Corp 半導体記憶装置
JP2015036998A (ja) * 2013-08-13 2015-02-23 株式会社東芝 半導体記憶装置
CN104575606B (zh) * 2013-10-10 2018-05-22 无锡华润上华科技有限公司 一种带有自检测电路的读出电路及控制方法
US9208895B1 (en) 2014-08-14 2015-12-08 Sandisk Technologies Inc. Cell current control through power supply
US9349468B2 (en) 2014-08-25 2016-05-24 SanDisk Technologies, Inc. Operational amplifier methods for charging of sense amplifier internal nodes
US9312018B1 (en) * 2014-09-24 2016-04-12 Intel Corporation Sensing with boost
US10032509B2 (en) * 2015-03-30 2018-07-24 Toshiba Memory Corporation Semiconductor memory device including variable resistance element
US9917507B2 (en) 2015-05-28 2018-03-13 Sandisk Technologies Llc Dynamic clock period modulation scheme for variable charge pump load currents
US9647536B2 (en) 2015-07-28 2017-05-09 Sandisk Technologies Llc High voltage generation using low voltage devices
US9520776B1 (en) 2015-09-18 2016-12-13 Sandisk Technologies Llc Selective body bias for charge pump transfer switches
JP6490018B2 (ja) * 2016-02-12 2019-03-27 東芝メモリ株式会社 半導体記憶装置
CN105913875B (zh) * 2016-03-31 2019-11-26 清华大学 控制电路、存储装置及操作方法
CN106098098B (zh) * 2016-06-22 2019-07-02 上海华虹宏力半导体制造有限公司 电流比较电路、存储器及电流比较方法
US9786345B1 (en) 2016-09-16 2017-10-10 Micron Technology, Inc. Compensation for threshold voltage variation of memory cell components
KR102662764B1 (ko) 2016-11-17 2024-05-02 삼성전자주식회사 페이지 버퍼, 이를 포함하는 메모리 장치 및 이의 독출 방법
US10366729B2 (en) 2017-06-22 2019-07-30 Sandisk Technologies Llc Sense circuit with two-step clock signal for consecutive sensing
JP2019067474A (ja) 2017-10-05 2019-04-25 東芝メモリ株式会社 半導体記憶装置
US10460814B2 (en) * 2017-12-12 2019-10-29 Western Digital Technologies, Inc. Non-volatile memory and method for power efficient read or verify using lockout control
KR102385569B1 (ko) * 2018-01-03 2022-04-12 삼성전자주식회사 메모리 장치
US10217496B1 (en) * 2018-02-28 2019-02-26 Arm Limited Bitline write assist circuitry
CN111462802B (zh) * 2019-01-22 2022-05-13 上海汉容微电子有限公司 一种nor闪存的读取电路
US11004501B2 (en) * 2019-06-26 2021-05-11 Macronix International Co., Ltd. Sensing a memory device
KR102736213B1 (ko) 2019-09-23 2024-12-02 에스케이하이닉스 주식회사 메모리 장치 및 그 동작 방법
US11417400B2 (en) 2020-01-31 2022-08-16 Sandisk Technologies Llc Controlling timing and ramp rate of program-inhibit voltage signal during programming to optimize peak current
US11074956B1 (en) * 2020-03-02 2021-07-27 Micron Technology, Inc. Arbitrated sense amplifier
US11929125B2 (en) 2021-06-23 2024-03-12 Sandisk Technologies Llc Window program verify to reduce data latch usage in memory device
US11901018B2 (en) * 2021-12-27 2024-02-13 Sandisk Technologies Llc Sense amplifier structure for non-volatile memory with neighbor bit line local data bus data transfer
CN118969043B (zh) * 2024-10-17 2025-02-28 苏州宽温电子科技有限公司 只读存储器单元阵列及其存储信息读取方法、系统、计算机设备、存储介质及程序产品

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0528780A (ja) * 1991-07-22 1993-02-05 Toshiba Corp 不揮発性半導体記憶装置
EP0974976A1 (en) * 1998-07-20 2000-01-26 STMicroelectronics S.r.l. Circuit and method for reading a non-volatile memory
JP2001266585A (ja) * 2000-03-23 2001-09-28 Toshiba Lsi System Support Kk Ｍｒｏｍ回路
WO2006065501A1 (en) * 2004-12-16 2006-06-22 Sandisk Corporation Memory sensing circuit and method for low voltage operation

Family Cites Families (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4785427A (en) 1987-01-28 1988-11-15 Cypress Semiconductor Corporation Differential bit line clamp
US5095344A (en) 1988-06-08 1992-03-10 Eliyahou Harari Highly compact eprom and flash eeprom devices
US5070032A (en) 1989-03-15 1991-12-03 Sundisk Corporation Method of making dense flash eeprom semiconductor memory structures
US5172338B1 (en) 1989-04-13 1997-07-08 Sandisk Corp Multi-state eeprom read and write circuits and techniques
US5343063A (en) 1990-12-18 1994-08-30 Sundisk Corporation Dense vertical programmable read only memory cell structure and processes for making them
US6222762B1 (en) 1992-01-14 2001-04-24 Sandisk Corporation Multi-state memory
US5313421A (en) 1992-01-14 1994-05-17 Sundisk Corporation EEPROM with split gate source side injection
US5315541A (en) 1992-07-24 1994-05-24 Sundisk Corporation Segmented column memory array
KR0169267B1 (ko) 1993-09-21 1999-02-01 사토 후미오 불휘발성 반도체 기억장치
US5661053A (en) 1994-05-25 1997-08-26 Sandisk Corporation Method of making dense flash EEPROM cell array and peripheral supporting circuits formed in deposited field oxide with the use of spacers
US5721702A (en) * 1995-08-01 1998-02-24 Micron Quantum Devices, Inc. Reference voltage generator using flash memory cells
US5903495A (en) 1996-03-18 1999-05-11 Kabushiki Kaisha Toshiba Semiconductor device and memory system
US5768192A (en) 1996-07-23 1998-06-16 Saifun Semiconductors, Ltd. Non-volatile semiconductor memory cell utilizing asymmetrical charge trapping
US6335149B1 (en) 1997-04-08 2002-01-01 Corning Incorporated High performance acrylate materials for optical interconnects
US6768165B1 (en) 1997-08-01 2004-07-27 Saifun Semiconductors Ltd. Two bit non-volatile electrically erasable and programmable semiconductor memory cell utilizing asymmetrical charge trapping
JP3883687B2 (ja) * 1998-02-16 2007-02-21 株式会社ルネサステクノロジ 半導体装置、メモリカード及びデータ処理システム
JP3983969B2 (ja) 2000-03-08 2007-09-26 株式会社東芝 不揮発性半導体記憶装置
ITRM20010001A1 (it) * 2001-01-03 2002-07-03 Micron Technology Inc Circuiteria di rilevazione per memorie flash a bassa tensione.
KR100381956B1 (ko) 2001-02-02 2003-04-26 삼성전자주식회사 플래시 메모리 장치의 감지 증폭 회로
US7196931B2 (en) * 2002-09-24 2007-03-27 Sandisk Corporation Non-volatile memory and method with reduced source line bias errors
US6657891B1 (en) 2002-11-29 2003-12-02 Kabushiki Kaisha Toshiba Semiconductor memory device for storing multivalued data
JP3920768B2 (ja) 2002-12-26 2007-05-30 株式会社東芝 不揮発性半導体メモリ
JP4322686B2 (ja) * 2004-01-07 2009-09-02 株式会社東芝 不揮発性半導体記憶装置
JP2005293659A (ja) * 2004-03-31 2005-10-20 Nec Electronics Corp メモリ装置とリファレンス電流設定方法
US7095655B2 (en) * 2004-08-12 2006-08-22 Saifun Semiconductors Ltd. Dynamic matching of signal path and reference path for sensing
US7120051B2 (en) 2004-12-14 2006-10-10 Sandisk Corporation Pipelined programming of non-volatile memories using early data
US20060140007A1 (en) 2004-12-29 2006-06-29 Raul-Adrian Cernea Non-volatile memory and method with shared processing for an aggregate of read/write circuits
KR100680486B1 (ko) * 2005-03-30 2007-02-08 주식회사 하이닉스반도체 향상된 동작 성능을 가지는 플래시 메모리 장치의 페이지버퍼 회로 및 그 독출 및 프로그램 동작 제어 방법
US7173854B2 (en) 2005-04-01 2007-02-06 Sandisk Corporation Non-volatile memory and method with compensation for source line bias errors
ITRM20050353A1 (it) * 2005-07-04 2007-01-05 Micron Technology Inc Amplificatore di rilevazione di piu' bit a bassa potenza.
US7447094B2 (en) 2005-12-29 2008-11-04 Sandisk Corporation Method for power-saving multi-pass sensing in non-volatile memory
US7564718B2 (en) * 2006-04-12 2009-07-21 Infineon Technologies Flash Gmbh & Co. Kg Method for programming a block of memory cells, non-volatile memory device and memory card device
US7580291B2 (en) * 2006-06-08 2009-08-25 Atmel Corporation Data register with efficient erase, program verify, and direct bit-line memory access features
US7539060B2 (en) 2007-04-05 2009-05-26 Sandisk Corporation Non-volatile storage using current sensing with biasing of source and P-Well
US7593265B2 (en) * 2007-12-28 2009-09-22 Sandisk Corporation Low noise sense amplifier array and method for nonvolatile memory
US7957197B2 (en) 2008-05-28 2011-06-07 Sandisk Corporation Nonvolatile memory with a current sense amplifier having a precharge circuit and a transfer gate coupled to a sense node

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0528780A (ja) * 1991-07-22 1993-02-05 Toshiba Corp 不揮発性半導体記憶装置
EP0974976A1 (en) * 1998-07-20 2000-01-26 STMicroelectronics S.r.l. Circuit and method for reading a non-volatile memory
JP2001266585A (ja) * 2000-03-23 2001-09-28 Toshiba Lsi System Support Kk Ｍｒｏｍ回路
WO2006065501A1 (en) * 2004-12-16 2006-06-22 Sandisk Corporation Memory sensing circuit and method for low voltage operation

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011146100A (ja) * 2010-01-15 2011-07-28 Toshiba Corp 半導体記憶装置及びその読出し方法
JP2021527294A (ja) * 2018-06-15 2021-10-11 シリコン ストーリッジ テクノロージー インコーポレイテッドＳｉｌｉｃｏｎ Ｓｔｏｒａｇｅ Ｔｅｃｈｎｏｌｏｇｙ， Ｉｎｃ． フラッシュメモリシステム用の改良されたセンスアンプ
JP7244550B2 (ja) 2018-06-15 2023-03-22 シリコン ストーリッジ テクノロージー インコーポレイテッド フラッシュメモリシステム用の改良されたセンスアンプ

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Publication number Publication date
US20090296488A1 (en) 2009-12-03
US8169831B2 (en) 2012-05-01
KR101468886B1 (ko) 2014-12-11
EP2289070A1 (en) 2011-03-02
US20110205804A1 (en) 2011-08-25
CN102113057A (zh) 2011-06-29
CN102113057B (zh) 2014-11-05
US7957197B2 (en) 2011-06-07
TW201007757A (en) 2010-02-16
WO2009146057A1 (en) 2009-12-03
KR20110034588A (ko) 2011-04-05
TWI397921B (zh) 2013-06-01
EP2289070B1 (en) 2014-05-07

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