CN102113057B - 高速感测放大器阵列以及用于非易失性存储器的方法 - Google Patents
高速感测放大器阵列以及用于非易失性存储器的方法 Download PDFInfo
- Publication number
- CN102113057B CN102113057B CN200980129692.7A CN200980129692A CN102113057B CN 102113057 B CN102113057 B CN 102113057B CN 200980129692 A CN200980129692 A CN 200980129692A CN 102113057 B CN102113057 B CN 102113057B
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- China
- Prior art keywords
- sensing
- node
- circuit
- memory cell
- memory
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Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
- G11C11/5642—Sensing or reading circuits; Data output circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/06—Arrangements for interconnecting storage elements electrically, e.g. by wiring
- G11C5/063—Voltage and signal distribution in integrated semi-conductor memory access lines, e.g. word-line, bit-line, cross-over resistance, propagation delay
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/02—Arrangements for writing information into, or reading information out from, a digital store with means for avoiding parasitic signals
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
- G11C2211/563—Multilevel memory reading aspects
- G11C2211/5634—Reference cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Read Only Memory (AREA)
Abstract
Description
Claims (19)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/128,535 | 2008-05-28 | ||
US12/128,535 US7957197B2 (en) | 2008-05-28 | 2008-05-28 | Nonvolatile memory with a current sense amplifier having a precharge circuit and a transfer gate coupled to a sense node |
PCT/US2009/039082 WO2009146057A1 (en) | 2008-05-28 | 2009-04-01 | High speed sense amplifier array and method for nonvolatile memory |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102113057A CN102113057A (zh) | 2011-06-29 |
CN102113057B true CN102113057B (zh) | 2014-11-05 |
Family
ID=40674075
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200980129692.7A Active CN102113057B (zh) | 2008-05-28 | 2009-04-01 | 高速感测放大器阵列以及用于非易失性存储器的方法 |
Country Status (7)
Country | Link |
---|---|
US (2) | US7957197B2 (zh) |
EP (1) | EP2289070B1 (zh) |
JP (1) | JP2011522348A (zh) |
KR (1) | KR101468886B1 (zh) |
CN (1) | CN102113057B (zh) |
TW (1) | TWI397921B (zh) |
WO (1) | WO2009146057A1 (zh) |
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US7957197B2 (en) * | 2008-05-28 | 2011-06-07 | Sandisk Corporation | Nonvolatile memory with a current sense amplifier having a precharge circuit and a transfer gate coupled to a sense node |
US8710907B2 (en) | 2008-06-24 | 2014-04-29 | Sandisk Technologies Inc. | Clock generator circuit for a charge pump |
US8446773B2 (en) * | 2009-02-25 | 2013-05-21 | Samsung Electronics Co., Ltd. | Memory system and programming method thereof |
US8339183B2 (en) | 2009-07-24 | 2012-12-25 | Sandisk Technologies Inc. | Charge pump with reduced energy consumption through charge sharing and clock boosting suitable for high voltage word line in flash memories |
US8773108B2 (en) | 2009-11-10 | 2014-07-08 | Power Monitors, Inc. | System, method, and apparatus for a safe powerline communications instrumentation front-end |
KR101094944B1 (ko) * | 2009-12-24 | 2011-12-15 | 주식회사 하이닉스반도체 | 센싱 전압을 제어하는 비휘발성 반도체 집적 회로 |
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US8339185B2 (en) | 2010-12-20 | 2012-12-25 | Sandisk 3D Llc | Charge pump system that dynamically selects number of active stages |
CN102881331A (zh) * | 2011-07-15 | 2013-01-16 | 复旦大学 | 灵敏放大器的控制电路及包括其的dram |
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WO2013058960A2 (en) | 2011-10-20 | 2013-04-25 | Sandisk Technologies Inc. | Compact sense amplifier for non-volatile memory |
US8630120B2 (en) | 2011-10-20 | 2014-01-14 | Sandisk Technologies Inc. | Compact sense amplifier for non-volatile memory |
US8705293B2 (en) | 2011-10-20 | 2014-04-22 | Sandisk Technologies Inc. | Compact sense amplifier for non-volatile memory suitable for quick pass write |
TWI463497B (zh) * | 2011-11-09 | 2014-12-01 | Macronix Int Co Ltd | 記憶體存取方法及應用其之快閃記憶體 |
US8971141B2 (en) | 2012-06-28 | 2015-03-03 | Sandisk Technologies Inc. | Compact high speed sense amplifier for non-volatile memory and hybrid lockout |
US9293195B2 (en) | 2012-06-28 | 2016-03-22 | Sandisk Technologies Inc. | Compact high speed sense amplifier for non-volatile memory |
US20140003176A1 (en) | 2012-06-28 | 2014-01-02 | Man Lung Mui | Compact High Speed Sense Amplifier for Non-Volatile Memory with Reduced layout Area and Power Consumption |
US9257154B2 (en) * | 2012-11-29 | 2016-02-09 | Micron Technology, Inc. | Methods and apparatuses for compensating for source voltage |
KR20140081027A (ko) * | 2012-12-21 | 2014-07-01 | 에스케이하이닉스 주식회사 | 비휘발성 메모리 장치 |
JP2014186777A (ja) * | 2013-03-22 | 2014-10-02 | Toshiba Corp | 半導体記憶装置 |
JP2015036998A (ja) * | 2013-08-13 | 2015-02-23 | 株式会社東芝 | 半導体記憶装置 |
CN104575606B (zh) | 2013-10-10 | 2018-05-22 | 无锡华润上华科技有限公司 | 一种带有自检测电路的读出电路及控制方法 |
US9208895B1 (en) | 2014-08-14 | 2015-12-08 | Sandisk Technologies Inc. | Cell current control through power supply |
US9349468B2 (en) | 2014-08-25 | 2016-05-24 | SanDisk Technologies, Inc. | Operational amplifier methods for charging of sense amplifier internal nodes |
US9312018B1 (en) * | 2014-09-24 | 2016-04-12 | Intel Corporation | Sensing with boost |
US10032509B2 (en) * | 2015-03-30 | 2018-07-24 | Toshiba Memory Corporation | Semiconductor memory device including variable resistance element |
US9917507B2 (en) | 2015-05-28 | 2018-03-13 | Sandisk Technologies Llc | Dynamic clock period modulation scheme for variable charge pump load currents |
US9647536B2 (en) | 2015-07-28 | 2017-05-09 | Sandisk Technologies Llc | High voltage generation using low voltage devices |
US9520776B1 (en) | 2015-09-18 | 2016-12-13 | Sandisk Technologies Llc | Selective body bias for charge pump transfer switches |
JP6490018B2 (ja) * | 2016-02-12 | 2019-03-27 | 東芝メモリ株式会社 | 半導体記憶装置 |
CN105913875B (zh) * | 2016-03-31 | 2019-11-26 | 清华大学 | 控制电路、存储装置及操作方法 |
CN106098098B (zh) * | 2016-06-22 | 2019-07-02 | 上海华虹宏力半导体制造有限公司 | 电流比较电路、存储器及电流比较方法 |
US9786345B1 (en) * | 2016-09-16 | 2017-10-10 | Micron Technology, Inc. | Compensation for threshold voltage variation of memory cell components |
KR102662764B1 (ko) | 2016-11-17 | 2024-05-02 | 삼성전자주식회사 | 페이지 버퍼, 이를 포함하는 메모리 장치 및 이의 독출 방법 |
US10366729B2 (en) | 2017-06-22 | 2019-07-30 | Sandisk Technologies Llc | Sense circuit with two-step clock signal for consecutive sensing |
JP2019067474A (ja) | 2017-10-05 | 2019-04-25 | 東芝メモリ株式会社 | 半導体記憶装置 |
US10460814B2 (en) * | 2017-12-12 | 2019-10-29 | Western Digital Technologies, Inc. | Non-volatile memory and method for power efficient read or verify using lockout control |
US10217496B1 (en) * | 2018-02-28 | 2019-02-26 | Arm Limited | Bitline write assist circuitry |
CN110610738B (zh) * | 2018-06-15 | 2023-08-18 | 硅存储技术公司 | 用于闪存存储器系统的改进的感测放大器 |
CN111462802B (zh) * | 2019-01-22 | 2022-05-13 | 上海汉容微电子有限公司 | 一种nor闪存的读取电路 |
US11004501B2 (en) * | 2019-06-26 | 2021-05-11 | Macronix International Co., Ltd. | Sensing a memory device |
KR20210034873A (ko) | 2019-09-23 | 2021-03-31 | 에스케이하이닉스 주식회사 | 메모리 장치 및 그 동작 방법 |
US11417400B2 (en) | 2020-01-31 | 2022-08-16 | Sandisk Technologies Llc | Controlling timing and ramp rate of program-inhibit voltage signal during programming to optimize peak current |
US11074956B1 (en) * | 2020-03-02 | 2021-07-27 | Micron Technology, Inc. | Arbitrated sense amplifier |
US11929125B2 (en) | 2021-06-23 | 2024-03-12 | Sandisk Technologies Llc | Window program verify to reduce data latch usage in memory device |
US11901018B2 (en) * | 2021-12-27 | 2024-02-13 | Sandisk Technologies Llc | Sense amplifier structure for non-volatile memory with neighbor bit line local data bus data transfer |
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EP0974976A1 (en) * | 1998-07-20 | 2000-01-26 | STMicroelectronics S.r.l. | Circuit and method for reading a non-volatile memory |
CN101055764A (zh) * | 2006-04-12 | 2007-10-17 | 奇梦达闪存有限责任公司 | 编程存储单元块的方法、非易失性存储器件和存储卡器件 |
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-
2008
- 2008-05-28 US US12/128,535 patent/US7957197B2/en active Active
-
2009
- 2009-04-01 CN CN200980129692.7A patent/CN102113057B/zh active Active
- 2009-04-01 KR KR1020107026690A patent/KR101468886B1/ko active IP Right Grant
- 2009-04-01 WO PCT/US2009/039082 patent/WO2009146057A1/en active Application Filing
- 2009-04-01 JP JP2011511667A patent/JP2011522348A/ja active Pending
- 2009-04-01 EP EP09755420.8A patent/EP2289070B1/en active Active
- 2009-04-20 TW TW098113074A patent/TWI397921B/zh not_active IP Right Cessation
-
2011
- 2011-05-03 US US13/100,164 patent/US8169831B2/en not_active Expired - Fee Related
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0974976A1 (en) * | 1998-07-20 | 2000-01-26 | STMicroelectronics S.r.l. | Circuit and method for reading a non-volatile memory |
CN101055764A (zh) * | 2006-04-12 | 2007-10-17 | 奇梦达闪存有限责任公司 | 编程存储单元块的方法、非易失性存储器件和存储卡器件 |
Also Published As
Publication number | Publication date |
---|---|
US7957197B2 (en) | 2011-06-07 |
US8169831B2 (en) | 2012-05-01 |
US20110205804A1 (en) | 2011-08-25 |
US20090296488A1 (en) | 2009-12-03 |
TW201007757A (en) | 2010-02-16 |
WO2009146057A1 (en) | 2009-12-03 |
EP2289070A1 (en) | 2011-03-02 |
TWI397921B (zh) | 2013-06-01 |
JP2011522348A (ja) | 2011-07-28 |
KR20110034588A (ko) | 2011-04-05 |
EP2289070B1 (en) | 2014-05-07 |
KR101468886B1 (ko) | 2014-12-11 |
CN102113057A (zh) | 2011-06-29 |
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Owner name: SANDISK TECHNOLOGY CO., LTD. Free format text: FORMER OWNER: SANDISK CORP. Effective date: 20120621 |
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