TWI397921B - 非揮發性記憶體之高速感測放大器陣列及方法 - Google Patents

非揮發性記憶體之高速感測放大器陣列及方法 Download PDF

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Publication number
TWI397921B
TWI397921B TW098113074A TW98113074A TWI397921B TW I397921 B TWI397921 B TW I397921B TW 098113074 A TW098113074 A TW 098113074A TW 98113074 A TW98113074 A TW 98113074A TW I397921 B TWI397921 B TW I397921B
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TW
Taiwan
Prior art keywords
sensing
node
memory
current
circuit
Prior art date
Application number
TW098113074A
Other languages
English (en)
Chinese (zh)
Other versions
TW201007757A (en
Inventor
Hao Thai Nguyen
Man Lung Mui
Seungpil Lee
Fanglin Zhang
Chi-Ming Wang
Original Assignee
Sandisk Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Sandisk Technologies Inc filed Critical Sandisk Technologies Inc
Publication of TW201007757A publication Critical patent/TW201007757A/zh
Application granted granted Critical
Publication of TWI397921B publication Critical patent/TWI397921B/zh

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5642—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/06—Arrangements for interconnecting storage elements electrically, e.g. by wiring
    • G11C5/063—Voltage and signal distribution in integrated semi-conductor memory access lines, e.g. word-line, bit-line, cross-over resistance, propagation delay
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/02—Arrangements for writing information into, or reading information out from, a digital store with means for avoiding parasitic signals
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/563—Multilevel memory reading aspects
    • G11C2211/5634—Reference cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)
TW098113074A 2008-05-28 2009-04-20 非揮發性記憶體之高速感測放大器陣列及方法 TWI397921B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12/128,535 US7957197B2 (en) 2008-05-28 2008-05-28 Nonvolatile memory with a current sense amplifier having a precharge circuit and a transfer gate coupled to a sense node

Publications (2)

Publication Number Publication Date
TW201007757A TW201007757A (en) 2010-02-16
TWI397921B true TWI397921B (zh) 2013-06-01

Family

ID=40674075

Family Applications (1)

Application Number Title Priority Date Filing Date
TW098113074A TWI397921B (zh) 2008-05-28 2009-04-20 非揮發性記憶體之高速感測放大器陣列及方法

Country Status (7)

Country Link
US (2) US7957197B2 (cg-RX-API-DMAC7.html)
EP (1) EP2289070B1 (cg-RX-API-DMAC7.html)
JP (1) JP2011522348A (cg-RX-API-DMAC7.html)
KR (1) KR101468886B1 (cg-RX-API-DMAC7.html)
CN (1) CN102113057B (cg-RX-API-DMAC7.html)
TW (1) TWI397921B (cg-RX-API-DMAC7.html)
WO (1) WO2009146057A1 (cg-RX-API-DMAC7.html)

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Also Published As

Publication number Publication date
US20090296488A1 (en) 2009-12-03
US8169831B2 (en) 2012-05-01
KR101468886B1 (ko) 2014-12-11
EP2289070A1 (en) 2011-03-02
US20110205804A1 (en) 2011-08-25
CN102113057A (zh) 2011-06-29
CN102113057B (zh) 2014-11-05
US7957197B2 (en) 2011-06-07
TW201007757A (en) 2010-02-16
WO2009146057A1 (en) 2009-12-03
KR20110034588A (ko) 2011-04-05
JP2011522348A (ja) 2011-07-28
EP2289070B1 (en) 2014-05-07

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