CN101989452B - 内容可寻址存储器 - Google Patents

内容可寻址存储器 Download PDF

Info

Publication number
CN101989452B
CN101989452B CN201010238029.5A CN201010238029A CN101989452B CN 101989452 B CN101989452 B CN 101989452B CN 201010238029 A CN201010238029 A CN 201010238029A CN 101989452 B CN101989452 B CN 101989452B
Authority
CN
China
Prior art keywords
control signal
search
line
match
unit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201010238029.5A
Other languages
English (en)
Chinese (zh)
Other versions
CN101989452A (zh
Inventor
渡边直也
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Electronics Corp
Original Assignee
Renesas Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Electronics Corp filed Critical Renesas Electronics Corp
Priority to CN201410009119.5A priority Critical patent/CN103730156B/zh
Publication of CN101989452A publication Critical patent/CN101989452A/zh
Application granted granted Critical
Publication of CN101989452B publication Critical patent/CN101989452B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C15/00—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores
    • G11C15/04—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using semiconductor elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C15/00—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores

Landscapes

  • Dram (AREA)
CN201010238029.5A 2009-08-03 2010-07-26 内容可寻址存储器 Active CN101989452B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201410009119.5A CN103730156B (zh) 2009-08-03 2010-07-26 内容可寻址存储器

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2009-180502 2009-08-03
JP2009180502A JP5477621B2 (ja) 2009-08-03 2009-08-03 連想メモリ

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN201410009119.5A Division CN103730156B (zh) 2009-08-03 2010-07-26 内容可寻址存储器

Publications (2)

Publication Number Publication Date
CN101989452A CN101989452A (zh) 2011-03-23
CN101989452B true CN101989452B (zh) 2015-04-29

Family

ID=43526836

Family Applications (2)

Application Number Title Priority Date Filing Date
CN201010238029.5A Active CN101989452B (zh) 2009-08-03 2010-07-26 内容可寻址存储器
CN201410009119.5A Active CN103730156B (zh) 2009-08-03 2010-07-26 内容可寻址存储器

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN201410009119.5A Active CN103730156B (zh) 2009-08-03 2010-07-26 内容可寻址存储器

Country Status (3)

Country Link
US (4) US8902624B2 (cg-RX-API-DMAC7.html)
JP (1) JP5477621B2 (cg-RX-API-DMAC7.html)
CN (2) CN101989452B (cg-RX-API-DMAC7.html)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130170273A1 (en) * 2011-12-29 2013-07-04 Lsi Corporation Content-Addressable Memory Architecture for Routing Raw Hit Lines Using Minimal Base Metal Layers
US8675427B2 (en) 2012-03-07 2014-03-18 International Business Machines Corporation Implementing RC and coupling delay correction for SRAM
JP5893465B2 (ja) * 2012-03-27 2016-03-23 ルネサスエレクトロニクス株式会社 連想記憶装置
US8964496B2 (en) 2013-07-26 2015-02-24 Micron Technology, Inc. Apparatuses and methods for performing compare operations using sensing circuitry
JP6533129B2 (ja) * 2015-08-28 2019-06-19 ルネサスエレクトロニクス株式会社 半導体装置
US9536608B1 (en) * 2015-11-17 2017-01-03 International Business Machines Corporation Content addressable memory device
CN107342102B (zh) * 2016-04-29 2021-04-27 上海磁宇信息科技有限公司 一种具有搜索功能的mram芯片及搜索方法
CN106205687B (zh) * 2016-06-30 2018-06-05 湖南恒茂高科股份有限公司 存储器及其搜索控制电路
KR20180028020A (ko) * 2016-09-07 2018-03-15 르네사스 일렉트로닉스 가부시키가이샤 반도체 장치
JP2018206452A (ja) * 2017-05-30 2018-12-27 ルネサスエレクトロニクス株式会社 内容参照メモリ及び半導体装置
KR102379729B1 (ko) * 2017-10-27 2022-03-29 삼성전자주식회사 우선 순위에 따라 매칭 라인들을 구동하는 메모리 장치
JP2019117678A (ja) 2017-12-27 2019-07-18 ルネサスエレクトロニクス株式会社 半導体装置
US10951146B1 (en) 2019-09-09 2021-03-16 Karma Automotive Llc Method to improve output current harmonic distribution in a segmented drive system
CN110993005B (zh) * 2019-12-11 2021-03-26 海光信息技术股份有限公司 电路结构、芯片、训练方法及训练装置
JP7431107B2 (ja) * 2020-06-01 2024-02-14 ルネサスエレクトロニクス株式会社 半導体装置
TWI758188B (zh) * 2021-02-02 2022-03-11 旺宏電子股份有限公司 記憶體裝置及其操作方法
TWI782652B (zh) * 2021-08-04 2022-11-01 新唐科技股份有限公司 格式設定系統及可定址發光裝置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5706224A (en) * 1996-10-10 1998-01-06 Quality Semiconductor, Inc. Content addressable memory and random access memory partition circuit
CN1614717A (zh) * 2003-11-03 2005-05-11 三星电子株式会社 检测优先编码器中错误的方法及其内容可寻址存储器
US20070058407A1 (en) * 2005-09-12 2007-03-15 Renesas Technology Corp. Semiconductor memory device

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3862346B2 (ja) 1997-03-13 2006-12-27 富士通株式会社 駆動回路及びそれを利用した半導体記憶装置
JP3190868B2 (ja) * 1997-11-21 2001-07-23 エヌイーシーマイクロシステム株式会社 連想メモリ装置
JP4732596B2 (ja) * 2000-03-03 2011-07-27 川崎マイクロエレクトロニクス株式会社 連想メモリ装置
JP4492897B2 (ja) 2000-06-15 2010-06-30 ルネサスエレクトロニクス株式会社 半導体記憶装置
JP4511790B2 (ja) 2001-01-10 2010-07-28 富士通セミコンダクター株式会社 連想記憶装置
US6781857B1 (en) * 2002-02-27 2004-08-24 Integrated Device Technology, Inc. Content addressable memory (CAM) devices that utilize multi-port CAM cells and control logic to support multiple overlapping search cycles that are asynchronously timed relative to each other
JP4149296B2 (ja) * 2003-03-26 2008-09-10 株式会社ルネサステクノロジ 半導体記憶装置
WO2005050663A1 (ja) 2003-11-21 2005-06-02 Hitachi, Ltd. 半導体集積回路装置
KR100532508B1 (ko) * 2004-03-12 2005-11-30 삼성전자주식회사 고속 동작이 가능한 캠
US7260674B2 (en) * 2004-05-25 2007-08-21 Intel Corporation Programmable parallel lookup memory
JP2005353238A (ja) * 2004-06-14 2005-12-22 Renesas Technology Corp 連想メモリ
US7505295B1 (en) * 2004-07-01 2009-03-17 Netlogic Microsystems, Inc. Content addressable memory with multi-row write function
JP2006059479A (ja) * 2004-08-23 2006-03-02 Renesas Technology Corp 連想記憶装置
JP4861012B2 (ja) * 2005-03-31 2012-01-25 ルネサスエレクトロニクス株式会社 Ｃａｍ装置
JP4624198B2 (ja) * 2005-07-06 2011-02-02 ルネサスエレクトロニクス株式会社 半導体記憶装置
US7577785B2 (en) * 2005-09-30 2009-08-18 Qualcomm Incorporated Content addressable memory with mixed serial and parallel search
US20070247885A1 (en) * 2006-04-25 2007-10-25 Renesas Technology Corp. Content addressable memory
US8169808B2 (en) * 2008-01-25 2012-05-01 Micron Technology, Inc. NAND flash content addressable memory
JP5140849B2 (ja) * 2008-02-13 2013-02-13 ルネサスエレクトロニクス株式会社 内容参照メモリ
US7881090B2 (en) 2009-03-16 2011-02-01 Netlogic Microsystems, Inc. Content addressable memory (CAM) array capable of implementing read or write operations during search operations
US8320148B1 (en) 2009-06-25 2012-11-27 Adesto Technologies Corporation PMC-based non-volatile CAM

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5706224A (en) * 1996-10-10 1998-01-06 Quality Semiconductor, Inc. Content addressable memory and random access memory partition circuit
CN1614717A (zh) * 2003-11-03 2005-05-11 三星电子株式会社 检测优先编码器中错误的方法及其内容可寻址存储器
US20070058407A1 (en) * 2005-09-12 2007-03-15 Renesas Technology Corp. Semiconductor memory device

Also Published As

Publication number Publication date
US8902624B2 (en) 2014-12-02
CN103730156B (zh) 2017-01-04
CN101989452A (zh) 2011-03-23
JP2011034636A (ja) 2011-02-17
US20160005465A1 (en) 2016-01-07
CN103730156A (zh) 2014-04-16
US9142295B2 (en) 2015-09-22
US20120262972A1 (en) 2012-10-18
US20150055390A1 (en) 2015-02-26
JP5477621B2 (ja) 2014-04-23
US20110026288A1 (en) 2011-02-03
US8441828B2 (en) 2013-05-14

Similar Documents

Publication Publication Date Title
CN101989452B (zh) 内容可寻址存储器
US7349231B2 (en) Semiconductor memory device
US6147891A (en) Match line control circuit for content addressable memory
CN107093455B (zh) 内容可寻址存储器芯片
CN102637448B (zh) 放大器感测
US9672912B2 (en) Semiconductor integrated circuit device with reduced power consumption
CN104335285A (zh) 内容可寻址存储器早期预测后期校正单端传感
US20220415396A1 (en) Ternary content addressable memory device based on ternary memory cell
US20180130509A1 (en) Memory device including encoded data line-multiplexer
US5511034A (en) Simple temporary information storage circuit controllable with enable/reset signal
US11107511B2 (en) Content addressable memory device with charge sharing based selective match line precharging scheme
US6996019B2 (en) Semiconductor device having sense amplifier driver that controls enabling timing
JP5480986B2 (ja) 連想メモリ
US20160109915A1 (en) Semiconductor device having identification information generating function and identification information generation method for semiconductor device
US10937475B1 (en) Content addressable memory
CN101388240A (zh) 半导体存储设备
US9412425B2 (en) Device and method for improving reading speed of memory
CN101114522A (zh) 非易失性存储器设备和处理从存储单元读取的数据的方法
TW202011402A (zh) 資料儲存裝置及相關聯系統與方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CP02 Change in the address of a patent holder

Address after: Tokyo, Japan, Japan

Patentee after: Renesas Electronics Corporation

Address before: Kanagawa

Patentee before: Renesas Electronics Corporation

CP02 Change in the address of a patent holder