JP5477621B2 - 連想メモリ - Google Patents

連想メモリ Download PDF

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Publication number
JP5477621B2
JP5477621B2 JP2009180502A JP2009180502A JP5477621B2 JP 5477621 B2 JP5477621 B2 JP 5477621B2 JP 2009180502 A JP2009180502 A JP 2009180502A JP 2009180502 A JP2009180502 A JP 2009180502A JP 5477621 B2 JP5477621 B2 JP 5477621B2
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JP
Japan
Prior art keywords
search
line
match
control signal
signal
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JP2009180502A
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English (en)
Japanese (ja)
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JP2011034636A (ja
JP2011034636A5 (cg-RX-API-DMAC7.html
Inventor
直也 渡邊
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Electronics Corp
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Renesas Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Electronics Corp filed Critical Renesas Electronics Corp
Priority to JP2009180502A priority Critical patent/JP5477621B2/ja
Priority to CN201010238029.5A priority patent/CN101989452B/zh
Priority to CN201410009119.5A priority patent/CN103730156B/zh
Priority to US12/849,384 priority patent/US8902624B2/en
Publication of JP2011034636A publication Critical patent/JP2011034636A/ja
Publication of JP2011034636A5 publication Critical patent/JP2011034636A5/ja
Priority to US13/536,533 priority patent/US8441828B2/en
Application granted granted Critical
Publication of JP5477621B2 publication Critical patent/JP5477621B2/ja
Priority to US14/529,074 priority patent/US9142295B2/en
Priority to US14/850,723 priority patent/US20160005465A1/en
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C15/00—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores
    • G11C15/04—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using semiconductor elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C15/00—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores

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  • Dram (AREA)
JP2009180502A 2009-08-03 2009-08-03 連想メモリ Active JP5477621B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2009180502A JP5477621B2 (ja) 2009-08-03 2009-08-03 連想メモリ
CN201010238029.5A CN101989452B (zh) 2009-08-03 2010-07-26 内容可寻址存储器
CN201410009119.5A CN103730156B (zh) 2009-08-03 2010-07-26 内容可寻址存储器
US12/849,384 US8902624B2 (en) 2009-08-03 2010-08-03 Content addressable memory
US13/536,533 US8441828B2 (en) 2009-08-03 2012-06-28 Content addressable memory
US14/529,074 US9142295B2 (en) 2009-08-03 2014-10-30 Content addressable memory
US14/850,723 US20160005465A1 (en) 2009-08-03 2015-09-10 Content addressable memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009180502A JP5477621B2 (ja) 2009-08-03 2009-08-03 連想メモリ

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2013041776A Division JP5480986B2 (ja) 2013-03-04 2013-03-04 連想メモリ

Publications (3)

Publication Number Publication Date
JP2011034636A JP2011034636A (ja) 2011-02-17
JP2011034636A5 JP2011034636A5 (cg-RX-API-DMAC7.html) 2012-04-12
JP5477621B2 true JP5477621B2 (ja) 2014-04-23

Family

ID=43526836

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009180502A Active JP5477621B2 (ja) 2009-08-03 2009-08-03 連想メモリ

Country Status (3)

Country Link
US (4) US8902624B2 (cg-RX-API-DMAC7.html)
JP (1) JP5477621B2 (cg-RX-API-DMAC7.html)
CN (2) CN101989452B (cg-RX-API-DMAC7.html)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130170273A1 (en) * 2011-12-29 2013-07-04 Lsi Corporation Content-Addressable Memory Architecture for Routing Raw Hit Lines Using Minimal Base Metal Layers
US8675427B2 (en) 2012-03-07 2014-03-18 International Business Machines Corporation Implementing RC and coupling delay correction for SRAM
JP5893465B2 (ja) * 2012-03-27 2016-03-23 ルネサスエレクトロニクス株式会社 連想記憶装置
US8964496B2 (en) 2013-07-26 2015-02-24 Micron Technology, Inc. Apparatuses and methods for performing compare operations using sensing circuitry
JP6533129B2 (ja) * 2015-08-28 2019-06-19 ルネサスエレクトロニクス株式会社 半導体装置
US9536608B1 (en) * 2015-11-17 2017-01-03 International Business Machines Corporation Content addressable memory device
CN107342102B (zh) * 2016-04-29 2021-04-27 上海磁宇信息科技有限公司 一种具有搜索功能的mram芯片及搜索方法
CN106205687B (zh) * 2016-06-30 2018-06-05 湖南恒茂高科股份有限公司 存储器及其搜索控制电路
KR20180028020A (ko) * 2016-09-07 2018-03-15 르네사스 일렉트로닉스 가부시키가이샤 반도체 장치
JP2018206452A (ja) * 2017-05-30 2018-12-27 ルネサスエレクトロニクス株式会社 内容参照メモリ及び半導体装置
KR102379729B1 (ko) * 2017-10-27 2022-03-29 삼성전자주식회사 우선 순위에 따라 매칭 라인들을 구동하는 메모리 장치
JP2019117678A (ja) 2017-12-27 2019-07-18 ルネサスエレクトロニクス株式会社 半導体装置
US10951146B1 (en) 2019-09-09 2021-03-16 Karma Automotive Llc Method to improve output current harmonic distribution in a segmented drive system
CN110993005B (zh) * 2019-12-11 2021-03-26 海光信息技术股份有限公司 电路结构、芯片、训练方法及训练装置
JP7431107B2 (ja) * 2020-06-01 2024-02-14 ルネサスエレクトロニクス株式会社 半導体装置
TWI758188B (zh) * 2021-02-02 2022-03-11 旺宏電子股份有限公司 記憶體裝置及其操作方法
TWI782652B (zh) * 2021-08-04 2022-11-01 新唐科技股份有限公司 格式設定系統及可定址發光裝置

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5706224A (en) * 1996-10-10 1998-01-06 Quality Semiconductor, Inc. Content addressable memory and random access memory partition circuit
JP3862346B2 (ja) 1997-03-13 2006-12-27 富士通株式会社 駆動回路及びそれを利用した半導体記憶装置
JP3190868B2 (ja) * 1997-11-21 2001-07-23 エヌイーシーマイクロシステム株式会社 連想メモリ装置
JP4732596B2 (ja) * 2000-03-03 2011-07-27 川崎マイクロエレクトロニクス株式会社 連想メモリ装置
JP4492897B2 (ja) 2000-06-15 2010-06-30 ルネサスエレクトロニクス株式会社 半導体記憶装置
JP4511790B2 (ja) 2001-01-10 2010-07-28 富士通セミコンダクター株式会社 連想記憶装置
US6781857B1 (en) * 2002-02-27 2004-08-24 Integrated Device Technology, Inc. Content addressable memory (CAM) devices that utilize multi-port CAM cells and control logic to support multiple overlapping search cycles that are asynchronously timed relative to each other
JP4149296B2 (ja) * 2003-03-26 2008-09-10 株式会社ルネサステクノロジ 半導体記憶装置
KR100518599B1 (ko) * 2003-11-03 2005-10-04 삼성전자주식회사 우선 순위 엔코더의 결함 여부 테스트가 가능한 캠 및우선 순위 엔코더의 결함 여부 테스트 방법
WO2005050663A1 (ja) 2003-11-21 2005-06-02 Hitachi, Ltd. 半導体集積回路装置
KR100532508B1 (ko) * 2004-03-12 2005-11-30 삼성전자주식회사 고속 동작이 가능한 캠
US7260674B2 (en) * 2004-05-25 2007-08-21 Intel Corporation Programmable parallel lookup memory
JP2005353238A (ja) * 2004-06-14 2005-12-22 Renesas Technology Corp 連想メモリ
US7505295B1 (en) * 2004-07-01 2009-03-17 Netlogic Microsystems, Inc. Content addressable memory with multi-row write function
JP2006059479A (ja) * 2004-08-23 2006-03-02 Renesas Technology Corp 連想記憶装置
JP4861012B2 (ja) * 2005-03-31 2012-01-25 ルネサスエレクトロニクス株式会社 Ｃａｍ装置
JP4624198B2 (ja) * 2005-07-06 2011-02-02 ルネサスエレクトロニクス株式会社 半導体記憶装置
JP4738112B2 (ja) * 2005-09-12 2011-08-03 ルネサスエレクトロニクス株式会社 半導体記憶装置
US7577785B2 (en) * 2005-09-30 2009-08-18 Qualcomm Incorporated Content addressable memory with mixed serial and parallel search
US20070247885A1 (en) * 2006-04-25 2007-10-25 Renesas Technology Corp. Content addressable memory
US8169808B2 (en) * 2008-01-25 2012-05-01 Micron Technology, Inc. NAND flash content addressable memory
JP5140849B2 (ja) * 2008-02-13 2013-02-13 ルネサスエレクトロニクス株式会社 内容参照メモリ
US7881090B2 (en) 2009-03-16 2011-02-01 Netlogic Microsystems, Inc. Content addressable memory (CAM) array capable of implementing read or write operations during search operations
US8320148B1 (en) 2009-06-25 2012-11-27 Adesto Technologies Corporation PMC-based non-volatile CAM

Also Published As

Publication number Publication date
US8902624B2 (en) 2014-12-02
CN103730156B (zh) 2017-01-04
CN101989452A (zh) 2011-03-23
JP2011034636A (ja) 2011-02-17
US20160005465A1 (en) 2016-01-07
CN103730156A (zh) 2014-04-16
US9142295B2 (en) 2015-09-22
US20120262972A1 (en) 2012-10-18
US20150055390A1 (en) 2015-02-26
CN101989452B (zh) 2015-04-29
US20110026288A1 (en) 2011-02-03
US8441828B2 (en) 2013-05-14

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