JP2010517298A5 - - Google Patents

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JP2010517298A5
JP2010517298A5 JP2009547307A JP2009547307A JP2010517298A5 JP 2010517298 A5 JP2010517298 A5 JP 2010517298A5 JP 2009547307 A JP2009547307 A JP 2009547307A JP 2009547307 A JP2009547307 A JP 2009547307A JP 2010517298 A5 JP2010517298 A5 JP 2010517298A5
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strained
strained layer
layer
thickness
single crystal
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Priority claimed from PCT/US2008/001003 external-priority patent/WO2008094464A2/en
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JP2009547307A 2007-01-26 2008-01-25 厚みのある擬似格子整合型の窒化物エピタキシャル層 Active JP5730484B2 (ja)

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Application Number Priority Date Filing Date Title
US89757207P 2007-01-26 2007-01-26
US60/897,572 2007-01-26
PCT/US2008/001003 WO2008094464A2 (en) 2007-01-26 2008-01-25 Thick pseudomorphic nitride epitaxial layers

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JP2015079162A Division JP2015167231A (ja) 2007-01-26 2015-04-08 厚みのある擬似格子整合型の窒化物エピタキシャル層

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JP2010517298A JP2010517298A (ja) 2010-05-20
JP2010517298A5 true JP2010517298A5 (OSRAM) 2014-12-04
JP5730484B2 JP5730484B2 (ja) 2015-06-10

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JP2015079162A Pending JP2015167231A (ja) 2007-01-26 2015-04-08 厚みのある擬似格子整合型の窒化物エピタキシャル層

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US (1) US9437430B2 (OSRAM)
JP (2) JP5730484B2 (OSRAM)
CN (1) CN101652832B (OSRAM)
WO (1) WO2008094464A2 (OSRAM)

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