JP4249184B2 - 窒化物半導体成長用基板 - Google Patents
窒化物半導体成長用基板 Download PDFInfo
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- JP4249184B2 JP4249184B2 JP2005513005A JP2005513005A JP4249184B2 JP 4249184 B2 JP4249184 B2 JP 4249184B2 JP 2005513005 A JP2005513005 A JP 2005513005A JP 2005513005 A JP2005513005 A JP 2005513005A JP 4249184 B2 JP4249184 B2 JP 4249184B2
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
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- H—ELECTRICITY
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/0242—Crystalline insulating materials
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02458—Nitrides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02488—Insulating materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
- H01L21/02505—Layer structure consisting of more than two layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02658—Pretreatments
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12535—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.] with additional, spatially distinct nonmetal component
- Y10T428/12556—Organic component
- Y10T428/12569—Synthetic resin
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12535—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.] with additional, spatially distinct nonmetal component
- Y10T428/12625—Free carbon containing component
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12771—Transition metal-base component
- Y10T428/12861—Group VIII or IB metal-base component
- Y10T428/12875—Platinum group metal-base component
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
Description
また、バッファー層を低温で堆積しても、低温バッファー層は非晶質であり、昇温時に固相成長する。そのため、バッファー層と基板との格子不整合は依然として存在しており、転移の発生を有効に抑制することは困難で、貫通転位が通常109〜1010cm−2存在する。この転位は、作製したデバイスの特性を劣化させることが良く知られている。例えば、レーザーの短寿命化や、デバイスのリーク電流の増大・低耐圧化などである。また、転位の存在によって、不純物の拡散あるいは偏析が促進されることもある。したがって、窒化物半導体層中の転位密度を減少させることは、デバイス特性の向上や、転位の影響によりこれまで達成できなかったデバイスの実現、結晶構造作製の制御性を高める上で、非常に重要である。
実施の形態
Resonance)プラズマ成膜装置によりAlと酸素を用い、室温、Arプラズマ中でAl2O3層2を厚さ5nm程度堆積した。その後、窒素を堆積ガス中に添加していき、AlON層3を厚さ10nm程度堆積した。次に、当該窒化物半導体成長用基板6上に成長させる窒化物半導体層(例えばGaN層)と同種のAlN層4を、Alと窒素を用い、Arプラズマ中で厚さ10nm程度堆積した。最後に、ストイキオメトリーの乱れからくる表面の不安定性を生じさせる不規則な自然酸化を防ぐために、Alと酸素を用い、Arプラズマ中でAl2O3からなるキャップ層5を厚さ5nm程度堆積した。このようにして窒化物半導体成長用基板6を作製した。
サファイア、Al2O3:a=4.758Å、c=12.991Å
AlN:a=3.112Å、c=4.982Å
GaN:a=3.189Å、c=5.185Å
Claims (3)
- サファイア基板上に窒化物半導体層を成長させるための窒化物半導体成長用基板において、
前記サファイア基板上に別途に設けられた、N、OおよびAlを含む層と、
前記N、OおよびAlを含む層上に設けられた、最上層としてのAl 2 O 3 からなるキャップ層と
を備え、
前記N、OおよびAlを含む層は、前記サファイア基板と第1の面で接し、前記第1の面におけるN、OおよびAlの組成比に対するNの割合が、前記キャップ層と接する第2の面における前記組成比に対するNの割合よりも小さく、かつ前記第1の面における前記組成比に対するOの割合が、前記第2の面における前記組成比に対するOの割合よりも大きくなるように形成されていることを特徴とする窒化物半導体成長用基板。 - サファイア基板上に窒化物半導体層を成長させるための窒化物半導体成長用基板において、
前記サファイア基板上に別途に設けたAl2O3層と、
前記Al2O3層上に設けた、AlON層及びAlN層のいずれか一方の層と、
前記AlON層及びAlN層の前記いずれか一方の層上に設けた、最上層としてのAl 2 O 3 からなるキャップ層と
を備えることを特徴とする窒化物半導体成長用基板。 - サファイア基板上に窒化物半導体層を成長させるための窒化物半導体成長用基板において、
前記サファイア基板上に別途に設けたAl2O3層と、
第1の層であるAlON層と、第2の層であるAlN層と
を備え、
前記第1の層と前記第2の層との順序で前記Al2O3層上に積層された構造を有し、
前記構造上に、最上層としてのAl2O3からなるキャップ層を設けたことを特徴とする窒化物半導体成長用基板。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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JP2003292350 | 2003-08-12 | ||
JP2003292350 | 2003-08-12 | ||
PCT/JP2004/011539 WO2005015618A1 (ja) | 2003-08-12 | 2004-08-11 | 窒化物半導体成長用基板 |
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JPWO2005015618A1 JPWO2005015618A1 (ja) | 2006-10-05 |
JP4249184B2 true JP4249184B2 (ja) | 2009-04-02 |
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JP2005513005A Active JP4249184B2 (ja) | 2003-08-12 | 2004-08-11 | 窒化物半導体成長用基板 |
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US (1) | US7244520B2 (ja) |
EP (1) | EP1655766B1 (ja) |
JP (1) | JP4249184B2 (ja) |
KR (1) | KR100690413B1 (ja) |
CN (1) | CN100389481C (ja) |
TW (1) | TW200518197A (ja) |
WO (1) | WO2005015618A1 (ja) |
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JP2001196697A (ja) * | 2000-01-13 | 2001-07-19 | Fuji Photo Film Co Ltd | 半導体素子用基板およびその製造方法およびその半導体素子用基板を用いた半導体素子 |
US6451711B1 (en) | 2000-05-04 | 2002-09-17 | Osemi, Incorporated | Epitaxial wafer apparatus |
US6744076B2 (en) * | 2002-03-14 | 2004-06-01 | The Circle For The Promotion Of Science And Engineering | Single crystalline aluminum nitride film, method of forming the same, base substrate for group III element nitride film, light emitting device and surface acoustic wave device |
-
2004
- 2004-08-11 KR KR1020057007350A patent/KR100690413B1/ko active IP Right Grant
- 2004-08-11 US US10/532,782 patent/US7244520B2/en active Active
- 2004-08-11 CN CNB200480001328XA patent/CN100389481C/zh active Active
- 2004-08-11 JP JP2005513005A patent/JP4249184B2/ja active Active
- 2004-08-11 EP EP04771524.8A patent/EP1655766B1/en active Active
- 2004-08-11 WO PCT/JP2004/011539 patent/WO2005015618A1/ja active IP Right Grant
- 2004-08-12 TW TW093124267A patent/TW200518197A/zh unknown
Also Published As
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EP1655766A1 (en) | 2006-05-10 |
CN1706030A (zh) | 2005-12-07 |
US7244520B2 (en) | 2007-07-17 |
US20060051554A1 (en) | 2006-03-09 |
JPWO2005015618A1 (ja) | 2006-10-05 |
WO2005015618A1 (ja) | 2005-02-17 |
EP1655766A4 (en) | 2009-10-21 |
KR100690413B1 (ko) | 2007-03-12 |
TW200518197A (en) | 2005-06-01 |
KR20050062640A (ko) | 2005-06-23 |
EP1655766B1 (en) | 2014-04-30 |
TWI305660B (ja) | 2009-01-21 |
CN100389481C (zh) | 2008-05-21 |
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