JP2010250921A5 - - Google Patents

Download PDF

Info

Publication number
JP2010250921A5
JP2010250921A5 JP2009178341A JP2009178341A JP2010250921A5 JP 2010250921 A5 JP2010250921 A5 JP 2010250921A5 JP 2009178341 A JP2009178341 A JP 2009178341A JP 2009178341 A JP2009178341 A JP 2009178341A JP 2010250921 A5 JP2010250921 A5 JP 2010250921A5
Authority
JP
Japan
Prior art keywords
refresh
signal
source
write
memory device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2009178341A
Other languages
English (en)
Japanese (ja)
Other versions
JP2010250921A (ja
Filing date
Publication date
Priority claimed from KR1020090032364A external-priority patent/KR101080200B1/ko
Application filed filed Critical
Publication of JP2010250921A publication Critical patent/JP2010250921A/ja
Publication of JP2010250921A5 publication Critical patent/JP2010250921A5/ja
Pending legal-status Critical Current

Links

JP2009178341A 2009-04-14 2009-07-30 半導体メモリ装置及びそのリフレッシュ制御方法 Pending JP2010250921A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020090032364A KR101080200B1 (ko) 2009-04-14 2009-04-14 반도체 메모리 장치 및 그 리프레쉬 제어 방법

Publications (2)

Publication Number Publication Date
JP2010250921A JP2010250921A (ja) 2010-11-04
JP2010250921A5 true JP2010250921A5 (enExample) 2012-09-13

Family

ID=42934283

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009178341A Pending JP2010250921A (ja) 2009-04-14 2009-07-30 半導体メモリ装置及びそのリフレッシュ制御方法

Country Status (5)

Country Link
US (1) US8169847B2 (enExample)
JP (1) JP2010250921A (enExample)
KR (1) KR101080200B1 (enExample)
CN (1) CN101866684B (enExample)
TW (1) TWI494920B (enExample)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103093807B (zh) * 2011-11-02 2015-08-26 华邦电子股份有限公司 随机存取存储器及其刷新控制器
CN104217746B (zh) * 2013-05-30 2017-04-12 华邦电子股份有限公司 参考存储胞的偏压产生器及偏压提供方法
US9123414B2 (en) 2013-11-22 2015-09-01 Micron Technology, Inc. Memory systems and memory programming methods
US9336875B2 (en) 2013-12-16 2016-05-10 Micron Technology, Inc. Memory systems and memory programming methods
KR102381046B1 (ko) * 2015-10-26 2022-03-31 에스케이하이닉스 주식회사 비휘발성 메모리 장치
US10714166B2 (en) * 2018-08-13 2020-07-14 Micron Technology, Inc. Apparatus and methods for decoding memory access addresses for access operations
US11069424B2 (en) * 2018-11-07 2021-07-20 Arm Limited Sensor for performance variation of memory read and write characteristics
US10885967B2 (en) * 2019-01-14 2021-01-05 Micron Technology, Inc. Systems and methods for improving power efficiency in refreshing memory banks
US10770127B2 (en) * 2019-02-06 2020-09-08 Micron Technology, Inc. Apparatuses and methods for managing row access counts
US11158364B2 (en) 2019-05-31 2021-10-26 Micron Technology, Inc. Apparatuses and methods for tracking victim rows
US11158373B2 (en) 2019-06-11 2021-10-26 Micron Technology, Inc. Apparatuses, systems, and methods for determining extremum numerical values
US10950290B2 (en) * 2019-07-05 2021-03-16 Macronix International Co., Ltd. Memory device and operating method thereof that reduce off current to reduce errors in reading and writing data which have plurality of memory cell blocks and a source voltage generator
US12159664B2 (en) * 2019-10-14 2024-12-03 Arm Limited Concurrent memory access operations
US11462291B2 (en) 2020-11-23 2022-10-04 Micron Technology, Inc. Apparatuses and methods for tracking word line accesses
KR102860712B1 (ko) * 2021-01-12 2025-09-17 에스케이하이닉스 주식회사 그룹 제어 회로 및 이를 포함하는 반도체 메모리 장치
US11482275B2 (en) 2021-01-20 2022-10-25 Micron Technology, Inc. Apparatuses and methods for dynamically allocated aggressor detection
US12597459B2 (en) 2021-12-29 2026-04-07 Micron Technology, Inc. Apparatuses and methods for row hammer counter mat
US12165687B2 (en) 2021-12-29 2024-12-10 Micron Technology, Inc. Apparatuses and methods for row hammer counter mat
US12592271B2 (en) 2022-12-22 2026-03-31 Micron Technology, Inc. Apparatuses and methods for increased reliability row hammer counts
US12550318B2 (en) * 2023-04-06 2026-02-10 Taiwan Semiconductor Manufacturing Company Limited Data storage node voltage monitor circuit and methods for forming the same

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6856568B1 (en) * 2000-04-25 2005-02-15 Multi Level Memory Technology Refresh operations that change address mappings in a non-volatile memory
JP2002140890A (ja) * 2000-10-31 2002-05-17 Hitachi Ltd 半導体装置
JP2002260381A (ja) * 2001-02-28 2002-09-13 Toshiba Corp 半導体メモリ装置
JP4354663B2 (ja) * 2001-03-15 2009-10-28 株式会社東芝 半導体メモリ装置
EP1355316B1 (en) 2002-04-18 2007-02-21 Innovative Silicon SA Data storage device and refreshing method for use with such device
US6633500B1 (en) * 2002-04-26 2003-10-14 Macronix International Co., Ltd. Systems and methods for refreshing a non-volatile memory using a token
JP2004111643A (ja) * 2002-09-18 2004-04-08 Toshiba Corp 半導体記憶装置、及び、その制御方法
TW200416921A (en) * 2003-02-25 2004-09-01 Tanaka Junichi Control method for semiconductor processing device
JP3913709B2 (ja) * 2003-05-09 2007-05-09 株式会社東芝 半導体記憶装置
US20040228168A1 (en) * 2003-05-13 2004-11-18 Richard Ferrant Semiconductor memory device and method of operating same
JP4195427B2 (ja) * 2004-08-31 2008-12-10 株式会社東芝 半導体記憶装置
US7301838B2 (en) 2004-12-13 2007-11-27 Innovative Silicon S.A. Sense amplifier circuitry and architecture to write data into and/or read from memory cells
JP4641817B2 (ja) * 2005-02-09 2011-03-02 株式会社神戸製鋼所 半導体装置用積層基板の製造方法及び半導体装置
JP2006295025A (ja) * 2005-04-14 2006-10-26 Sharp Corp 半導体装置およびその製造方法
US7355916B2 (en) 2005-09-19 2008-04-08 Innovative Silicon S.A. Method and circuitry to generate a reference current for reading a memory cell, and device implementing same
JP2007207358A (ja) 2006-02-02 2007-08-16 Toshiba Corp 半導体記憶装置
KR100776737B1 (ko) * 2006-02-10 2007-11-19 주식회사 하이닉스반도체 반도체 메모리의 액티브 싸이클 제어장치 및 방법
US7492632B2 (en) 2006-04-07 2009-02-17 Innovative Silicon Isi Sa Memory array having a programmable word length, and method of operating same
TWI308390B (en) * 2006-08-07 2009-04-01 Univ Nat Sun Yat Sen Mos device with ritds and method for making the same
KR100861301B1 (ko) 2007-05-10 2008-10-01 주식회사 하이닉스반도체 반도체 소자 및 그의 제조방법
JP2009004010A (ja) * 2007-06-20 2009-01-08 Toshiba Corp 半導体記憶装置およびその駆動方法

Similar Documents

Publication Publication Date Title
KR100300079B1 (ko) 센스앰프 구동회로
TWI494920B (zh) 半導體記憶體裝置及其更新控制方法
TW200620313A (en) Semiconductor memory device having local sense amplifier with on/of control
CN108255751B (zh) 用于控制刷新操作的存储器装置及包括其的自刷新控制器
JPH10340583A (ja) ビットラインセンスアンプのオーバードライビング方法
US20060044904A1 (en) Bit line sense amplifier control circuit
KR100295048B1 (ko) 기입시간을최소화하는메모리장치및데이터기입방법
CN108109650B (zh) 半导体器件、包括其的半导体系统及读取和写入操作方法
KR102395158B1 (ko) 반도체 메모리 장치
JP4025537B2 (ja) Ｓｒａｍデバイスのワードライン制御回路
JP4868351B2 (ja) 半導体メモリ装置
KR20110025487A (ko) 반도체 메모리 장치
CN1728278B (zh) 半导体装置的操作方法以及该半导体装置
KR20190063885A (ko) 반도체 메모리 장치
KR20140080380A (ko) 데이터입출력회로 및 이를 포함하는 반도체메모리장치
KR20030060640A (ko) 디램의 컬럼 인에이블 신호 발생 회로
KR100309472B1 (ko) 에스디램의 센스앰프 구동회로
KR100612951B1 (ko) 반도체 메모리 소자
KR100980061B1 (ko) 제어신호 생성회로
KR100940844B1 (ko) 반도체 메모리 장치의 센스앰프 구동회로
US9449658B2 (en) Semiconductor apparatus
KR100945789B1 (ko) 서브 워드라인 드라이버 및 이를 포함하는 반도체 메모리장치
JP2011175696A (ja) 半導体装置
KR19990057796A (ko) 반도체 장치
KR100600326B1 (ko) 화면표시장치의 구동 드라이버