JP4868351B2 - 半導体メモリ装置 - Google Patents
半導体メモリ装置 Download PDFInfo
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- JP4868351B2 JP4868351B2 JP2005373601A JP2005373601A JP4868351B2 JP 4868351 B2 JP4868351 B2 JP 4868351B2 JP 2005373601 A JP2005373601 A JP 2005373601A JP 2005373601 A JP2005373601 A JP 2005373601A JP 4868351 B2 JP4868351 B2 JP 4868351B2
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- Prior art keywords
- write
- signal
- enable signal
- output
- driver
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- 239000004065 semiconductor Substances 0.000 title claims description 31
- 238000010586 diagram Methods 0.000 description 12
- 101001107782 Homo sapiens Iron-sulfur protein NUBPL Proteins 0.000 description 2
- 102100021998 Iron-sulfur protein NUBPL Human genes 0.000 description 2
- 101100072620 Streptomyces griseus ind2 gene Proteins 0.000 description 2
- 230000003213 activating effect Effects 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- HCUOEKSZWPGJIM-YBRHCDHNSA-N (e,2e)-2-hydroxyimino-6-methoxy-4-methyl-5-nitrohex-3-enamide Chemical compound COCC([N+]([O-])=O)\C(C)=C\C(=N/O)\C(N)=O HCUOEKSZWPGJIM-YBRHCDHNSA-N 0.000 description 1
- 101001109689 Homo sapiens Nuclear receptor subfamily 4 group A member 3 Proteins 0.000 description 1
- 101000598778 Homo sapiens Protein OSCP1 Proteins 0.000 description 1
- 101001067395 Mus musculus Phospholipid scramblase 1 Proteins 0.000 description 1
- 102100022673 Nuclear receptor subfamily 4 group A member 3 Human genes 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1078—Data input circuits, e.g. write amplifiers, data input buffers, data input registers, data input level conversion circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1048—Data bus control circuits, e.g. precharging, presetting, equalising
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1078—Data input circuits, e.g. write amplifiers, data input buffers, data input registers, data input level conversion circuits
- G11C7/1087—Data input latches
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1078—Data input circuits, e.g. write amplifiers, data input buffers, data input registers, data input level conversion circuits
- G11C7/1093—Input synchronization
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1078—Data input circuits, e.g. write amplifiers, data input buffers, data input registers, data input level conversion circuits
- G11C7/1096—Write circuits, e.g. I/O line write drivers
Description
NOR1〜NOR2 NORゲート
I1〜I16 インバータ
Claims (4)
- グローバルデータラインに伝達されるグローバルデータを第1ライトイネーブル信号に応答し、ラッチするためのグローバルデータラッチ部と、
前記グローバルデータラッチ部から出力されるグローバルラッチデータを第2ライトイネーブル信号に応答して受け取り、ローカルデータラインに出力するためのローカルデータライトドライバーと、
前記第1ライトイネーブル信号及び前記第2ライトイネーブル信号を生成して出力するものの、ライト命令が行われない区間には、前記第1ライトイネーブル信号が非活性化されて出力されるように制御するライトドライバー制御部と、
を備え、
前記ライトドライバー制御部は、
ライト動作が起こるバンクをイネーブルさせるためのバンク信号と、入力された命令がライト命令の時、活性化されるライト命令信号と、データ入出力モードに対応して選択されたライトドライバーを活性化させるためのドライバー選択信号を組み合わせて中間イネーブル信号を出力する中間イネーブル信号出力部と、
前記中間イネーブル信号出力部から出力される中間イネーブル信号及びライト命令に対応する動作を行うために伝達されるライト制御信号を受け取り、前記第1ライトイネーブル信号を出力するための第1出力部と、
前記ドライバー選択信号と前記ライト制御信号とを組み合わせて前記第2ライトイネーブル信号を出力するための第2出力部と、
を備えることを特徴とする半導体メモリ装置。 - 前記中間イネーブル信号出力部は、
前記ライト命令信号と、前記ドライバー選択信号と、前記バンク信号とを受け取り、前記中間イネーブル信号を出力するNANDゲートを備えることを特徴とする請求項1に記載の半導体メモリ装置。 - 前記第1出力部は、
前記NANDゲートから出力される中間イネーブル信号と前記ライト制御信号とを受け取り、前記第1ライトイネーブル信号を出力するNORゲートを備えることを特徴とする請求項2に記載の半導体メモリ装置。 - 前記第2出力部は、
前記ドライバー選択信号と前記ライト制御信号とを受け取るNANDゲートと、
前記NANDゲートの出力を反転し、前記第2ライトイネーブル信号を出力するためのインバータと、
を備えることを特徴とする請求項2又は3に記載の半導体メモリ装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2005-0058716 | 2005-06-30 | ||
KR1020050058716A KR100605607B1 (ko) | 2005-06-30 | 2005-06-30 | 반도체 메모리 장치 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007012242A JP2007012242A (ja) | 2007-01-18 |
JP4868351B2 true JP4868351B2 (ja) | 2012-02-01 |
Family
ID=37184632
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005373601A Active JP4868351B2 (ja) | 2005-06-30 | 2005-12-26 | 半導体メモリ装置 |
Country Status (3)
Country | Link |
---|---|
US (2) | US7359256B2 (ja) |
JP (1) | JP4868351B2 (ja) |
KR (1) | KR100605607B1 (ja) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100744090B1 (ko) * | 2006-08-31 | 2007-08-01 | 주식회사 하이닉스반도체 | 반도체 메모리 장치 및 그 구동방법 |
KR100907008B1 (ko) * | 2007-12-21 | 2009-07-08 | 주식회사 하이닉스반도체 | 반도체 메모리 장치 및 그의 데이터 마스킹 방법 |
JP5315739B2 (ja) * | 2008-03-21 | 2013-10-16 | 富士通株式会社 | メモリ装置、メモリ制御方法 |
TW200943295A (en) * | 2008-04-14 | 2009-10-16 | Nanya Technology Corp | Operation method for memory |
JP5298644B2 (ja) * | 2008-05-30 | 2013-09-25 | 富士通株式会社 | 記憶回路および制御方法 |
US8130567B2 (en) | 2008-12-24 | 2012-03-06 | Stmicroelectronics Pvt. Ltd. | Write circuitry for hierarchical memory architecture |
KR102653529B1 (ko) * | 2018-10-22 | 2024-04-02 | 에스케이하이닉스 주식회사 | 반도체장치 및 반도체시스템 |
US11023173B2 (en) | 2019-09-03 | 2021-06-01 | Micron Technology, Inc. | Apparatuses and methods to mask write operations for a mode of operation using ECC circuitry |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5384745A (en) * | 1992-04-27 | 1995-01-24 | Mitsubishi Denki Kabushiki Kaisha | Synchronous semiconductor memory device |
JP3319105B2 (ja) * | 1993-12-15 | 2002-08-26 | 富士通株式会社 | 同期型メモリ |
JPH08138377A (ja) * | 1994-11-08 | 1996-05-31 | Hitachi Ltd | 半導体記憶装置 |
JP2000048570A (ja) * | 1998-07-28 | 2000-02-18 | Mitsubishi Electric Corp | 半導体記憶装置 |
JP2000078858A (ja) | 1998-08-28 | 2000-03-14 | Hitachi Lighting Ltd | インバータ装置 |
JP3604291B2 (ja) * | 1998-10-08 | 2004-12-22 | 富士通株式会社 | ダブルレートの入出力回路を有するメモリデバイス |
JP2000215669A (ja) * | 1999-01-19 | 2000-08-04 | Mitsubishi Electric Corp | 半導体記憶装置 |
JP3307360B2 (ja) | 1999-03-10 | 2002-07-24 | 日本電気株式会社 | 半導体集積回路装置 |
KR100625818B1 (ko) * | 1999-05-11 | 2006-09-20 | 주식회사 하이닉스반도체 | 글로벌 데이터 버스 래치 |
JP2001126470A (ja) | 1999-10-26 | 2001-05-11 | Mitsubishi Electric Corp | 半導体記憶装置 |
JP2003085997A (ja) * | 2001-09-07 | 2003-03-20 | Mitsubishi Electric Corp | 半導体記憶装置 |
JP2003249077A (ja) * | 2002-02-21 | 2003-09-05 | Elpida Memory Inc | 半導体記憶装置及びその制御方法 |
JP4203384B2 (ja) * | 2003-09-11 | 2008-12-24 | パナソニック株式会社 | 半導体装置 |
KR100720260B1 (ko) * | 2004-11-15 | 2007-05-22 | 주식회사 하이닉스반도체 | 반도체 메모리 장치의 로컬 입출력 라인 프리차지 회로 |
-
2005
- 2005-06-30 KR KR1020050058716A patent/KR100605607B1/ko active IP Right Grant
- 2005-12-21 US US11/312,610 patent/US7359256B2/en active Active
- 2005-12-26 JP JP2005373601A patent/JP4868351B2/ja active Active
-
2008
- 2008-03-04 US US12/073,294 patent/US7573757B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
JP2007012242A (ja) | 2007-01-18 |
US7573757B2 (en) | 2009-08-11 |
KR100605607B1 (ko) | 2006-08-01 |
US20070002672A1 (en) | 2007-01-04 |
US7359256B2 (en) | 2008-04-15 |
US20080151657A1 (en) | 2008-06-26 |
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