JP4641817B2 - 半導体装置用積層基板の製造方法及び半導体装置 - Google Patents
半導体装置用積層基板の製造方法及び半導体装置 Download PDFInfo
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- JP4641817B2 JP4641817B2 JP2005033672A JP2005033672A JP4641817B2 JP 4641817 B2 JP4641817 B2 JP 4641817B2 JP 2005033672 A JP2005033672 A JP 2005033672A JP 2005033672 A JP2005033672 A JP 2005033672A JP 4641817 B2 JP4641817 B2 JP 4641817B2
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- 239000000758 substrate Substances 0.000 title claims description 166
- 239000004065 semiconductor Substances 0.000 title claims description 72
- 238000004519 manufacturing process Methods 0.000 title claims description 34
- 229910052710 silicon Inorganic materials 0.000 claims description 131
- 239000010703 silicon Substances 0.000 claims description 131
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 130
- 229910003460 diamond Inorganic materials 0.000 claims description 103
- 239000010432 diamond Substances 0.000 claims description 103
- 238000000034 method Methods 0.000 claims description 43
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 11
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 10
- 239000002019 doping agent Substances 0.000 claims description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 21
- 239000007789 gas Substances 0.000 description 19
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 8
- 238000005229 chemical vapour deposition Methods 0.000 description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 239000005380 borophosphosilicate glass Substances 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 230000017525 heat dissipation Effects 0.000 description 5
- 238000005498 polishing Methods 0.000 description 5
- 229920005591 polysilicon Polymers 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 229910052783 alkali metal Inorganic materials 0.000 description 4
- 150000001340 alkali metals Chemical class 0.000 description 4
- 229910001385 heavy metal Inorganic materials 0.000 description 4
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 4
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 239000012808 vapor phase Substances 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000000992 sputter etching Methods 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- QZPSXPBJTPJTSZ-UHFFFAOYSA-N aqua regia Chemical compound Cl.O[N+]([O-])=O QZPSXPBJTPJTSZ-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000008119 colloidal silica Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- CYTQBVOFDCPGCX-UHFFFAOYSA-N trimethyl phosphite Chemical compound COP(OC)OC CYTQBVOFDCPGCX-UHFFFAOYSA-N 0.000 description 1
- WXRGABKACDFXMG-UHFFFAOYSA-N trimethylborane Chemical compound CB(C)C WXRGABKACDFXMG-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/022—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides
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- A61B17/1662—Bone cutting, breaking or removal means other than saws, e.g. Osteoclasts; Drills or chisels for bones; Trepans for particular parts of the body
- A61B17/1673—Bone cutting, breaking or removal means other than saws, e.g. Osteoclasts; Drills or chisels for bones; Trepans for particular parts of the body for the jaw
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- A61C8/0089—Implanting tools or instruments
- A61C8/009—Implanting tools or instruments for selecting the right implanting element, e.g. templates
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- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
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- C23C16/274—Diamond only using microwave discharges
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/278—Diamond only doping or introduction of a secondary phase in the diamond
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02115—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material being carbon, e.g. alpha-C, diamond or hydrogen doped carbon
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- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
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- H01L21/0405—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising semiconducting carbon, e.g. diamond, diamond-like carbon
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- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
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- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
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Description
2、12;SiO2層
3、14、113;ダイヤモンド層
4、15、112;シリコン層
6;ポリシリコン膜
7;SiO2膜
10、20、100;積層基板
13;アモルファスシリコン層
17;アルミニウムマスク
114;多結晶シリコン層
Claims (12)
- 第1のシリコン基板の一方の面上にダイヤモンド層を形成する工程と、前記ダイヤモンド層上及び第2のシリコン基板上にシリコンを含有する層を形成する工程と、前記ダイヤモンド層と第2のシリコン基板とをシリコンを含有する層を介して接合する工程と、前記第1のシリコン基板を除去して前記ダイヤモンド層の表面を露出させる工程と、前記ダイヤモンド層上に半導体層を形成する工程と、を有することを特徴とする半導体装置用積層基板の製造方法。
- 前記ダイヤモンド層を局所的に形成することを特徴とする請求項1に記載の半導体装置用積層基板の製造方法。
- 前記第2のシリコン基板の前記一方の面における前記ダイヤモンド層が設けられていない領域上にも前記半導体層を形成することを特徴とする請求項2に記載の半導体装置用積層基板の製造方法。
- 前記ダイヤモンド層と前記第2のシリコン基板とを酸化シリコン層を介して接合することを特徴とする請求項1乃至3のいずれか1項に記載の半導体装置用積層基板の製造方法。
- 前記酸化シリコン層を、前記ダイヤモンド層及び前記第2のシリコン基板の双方の接合面上に形成しておくことを特徴とする請求項4に記載の半導体装置用積層基板の製造方法。
- 前記ダイヤモンド層と前記第2のシリコン基板とをアモルファスシリコン層を介して接合することを特徴とする請求項1乃至3のいずれか1項に記載の半導体装置用積層基板の製造方法。
- 前記アモルファスシリコン層を、前記ダイヤモンド層及び前記第2のシリコン基板の双方の接合面上に形成しておくことを特徴とする請求項6に記載の半導体装置用積層基板の製造方法。
- 前記ダイヤモンド層及び前記第2のシリコン基板のうち、一方の接合面に酸化シリコン層を形成すると共に他方の接合面にアモルファスシリコン層を形成しておき、前記酸化シリコン層及び前記アモルファスシリコン層を介して前記ダイヤモンド層と前記第2のシリコン基板とを接合することを特徴とする請求項1乃至3のいずれか1項に記載の半導体装置用積層基板の製造方法。
- 前記ダイヤモンド層と前記第2のシリコン基板とを熱圧着により接合することを特徴とする請求項4乃至8のいずれか1項に記載の半導体装置用積層基板の製造方法。
- 前記ダイヤモンド層は、ドーパンドがドープされた導電性ダイヤモンドにより形成されていることを特徴とする請求項1乃至9のいずれか1項に記載の半導体装置用積層基板の製造方法。
- 前記半導体層は、シリコン層であり、この半導体層に素子が形成されることを特徴とする請求項1乃至10のいずれか1項に記載の半導体装置用積層基板の製造方法。
- 請求項1乃至11のいずれか1項に記載の方法で製造された積層基板を有することを特徴とする半導体装置。
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JP2005033672A JP4641817B2 (ja) | 2005-02-09 | 2005-02-09 | 半導体装置用積層基板の製造方法及び半導体装置 |
TW094147623A TWI308606B (en) | 2005-02-09 | 2005-12-30 | Semiconductor device and method for manufacturing multilayered substrate for semiconductor device |
US11/328,162 US7285479B2 (en) | 2005-02-09 | 2006-01-10 | Semiconductor device and method for manufacturing multilayered substrate for semiconductor device |
KR1020060012101A KR100740032B1 (ko) | 2005-02-09 | 2006-02-08 | 반도체 장치용 적층 기판의 제조 방법 및 반도체 장치 |
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US7344760B1 (en) * | 2003-09-12 | 2008-03-18 | The United States Of America As Represented By The Secretary Of The Navy | Wear-resistant electrically conductive body |
TWI262853B (en) * | 2005-04-27 | 2006-10-01 | Kinik Co | Diamond substrate and method for fabricating the same |
GB0721760D0 (en) * | 2007-11-06 | 2007-12-19 | Element Six Ltd | Composite material |
FR2934713B1 (fr) * | 2008-07-29 | 2010-10-15 | Commissariat Energie Atomique | Substrat de type semi-conducteur sur isolant a couches de diamant intrinseque et dope |
FR2938373A1 (fr) * | 2008-11-12 | 2010-05-14 | Commissariat Energie Atomique | Integration d'une couche de diamant polycristallin, notamment dans une structure sod |
KR101080200B1 (ko) * | 2009-04-14 | 2011-11-07 | 주식회사 하이닉스반도체 | 반도체 메모리 장치 및 그 리프레쉬 제어 방법 |
US10584412B2 (en) | 2016-03-08 | 2020-03-10 | Ii-Vi Delaware, Inc. | Substrate comprising a layer of silicon and a layer of diamond having an optically finished (or a dense) silicon-diamond interface |
CN107665829B (zh) | 2017-08-24 | 2019-12-17 | 长江存储科技有限责任公司 | 晶圆混合键合中提高金属引线制程安全性的方法 |
WO2020263845A1 (en) * | 2019-06-24 | 2020-12-30 | Akash Systems, Inc. | Material growth on wide-bandgap semiconductor materials |
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US5552345A (en) * | 1993-09-22 | 1996-09-03 | Harris Corporation | Die separation method for silicon on diamond circuit structures |
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US4169337A (en) * | 1978-03-30 | 1979-10-02 | Nalco Chemical Company | Process for polishing semi-conductor materials |
US5131963A (en) | 1987-11-16 | 1992-07-21 | Crystallume | Silicon on insulator semiconductor composition containing thin synthetic diamone films |
JPH02206118A (ja) * | 1989-02-06 | 1990-08-15 | Hitachi Ltd | 半導体素子 |
US5313094A (en) * | 1992-01-28 | 1994-05-17 | International Business Machines Corportion | Thermal dissipation of integrated circuits using diamond paths |
US5276338A (en) * | 1992-05-15 | 1994-01-04 | International Business Machines Corporation | Bonded wafer structure having a buried insulation layer |
KR100335449B1 (ko) * | 1998-04-17 | 2002-05-04 | 가네꼬 히사시 | Soi 기판 및 그 제조 방법 |
FR2781082B1 (fr) * | 1998-07-10 | 2002-09-20 | Commissariat Energie Atomique | Structure semiconductrice en couche mince comportant une couche de repartition de chaleur |
JP3062163B2 (ja) | 1998-12-01 | 2000-07-10 | キヤノン販売株式会社 | 半導体装置及び半導体装置の膜の形成方法 |
US6770966B2 (en) * | 2001-07-31 | 2004-08-03 | Intel Corporation | Electronic assembly including a die having an integrated circuit and a layer of diamond to transfer heat |
JP2003261399A (ja) * | 2002-03-11 | 2003-09-16 | Shin Etsu Chem Co Ltd | ダイヤモンド製膜用基材およびダイヤモンド膜 |
JP2004204299A (ja) * | 2002-12-25 | 2004-07-22 | Ebara Corp | ダイヤモンド成膜シリコンおよび電極 |
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US5552345A (en) * | 1993-09-22 | 1996-09-03 | Harris Corporation | Die separation method for silicon on diamond circuit structures |
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JP2006222236A (ja) | 2006-08-24 |
KR100740032B1 (ko) | 2007-07-18 |
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TWI308606B (en) | 2009-04-11 |
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US20060175293A1 (en) | 2006-08-10 |
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