JP2010182668A - 発光装置及び電子機器 - Google Patents

発光装置及び電子機器 Download PDF

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Publication number
JP2010182668A
JP2010182668A JP2010000904A JP2010000904A JP2010182668A JP 2010182668 A JP2010182668 A JP 2010182668A JP 2010000904 A JP2010000904 A JP 2010000904A JP 2010000904 A JP2010000904 A JP 2010000904A JP 2010182668 A JP2010182668 A JP 2010182668A
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layer
light
substrate
insulating layer
emitting device
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Japanese (ja)
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JP2010182668A5 (ja
Inventor
Shunpei Yamazaki
舜平 山崎
Masahiro Katayama
雅博 片山
Shingo Eguchi
晋吾 江口
Yoshiaki Oikawa
欣聡 及川
Ami Nakamura
亜美 中村
Tetsushi Seo
哲史 瀬尾
Kaoru Hatano
薫 波多野
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2010000904A priority Critical patent/JP2010182668A/ja
Publication of JP2010182668A publication Critical patent/JP2010182668A/ja
Publication of JP2010182668A5 publication Critical patent/JP2010182668A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H10K77/111—Flexible substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/02—Details
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/02—Details
    • H05B33/04—Sealing arrangements, e.g. against humidity
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/841—Self-supporting sealing arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/871—Self-supporting sealing arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1218—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/1262—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate
    • H01L27/1266—Multistep manufacturing methods with a particular formation, treatment or coating of the substrate the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/311—Flexible OLED
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/80—Manufacture or treatment specially adapted for the organic devices covered by this subclass using temporary substrates
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Push-Button Switches (AREA)
JP2010000904A 2009-01-08 2010-01-06 発光装置及び電子機器 Withdrawn JP2010182668A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2010000904A JP2010182668A (ja) 2009-01-08 2010-01-06 発光装置及び電子機器

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2009002567 2009-01-08
JP2010000904A JP2010182668A (ja) 2009-01-08 2010-01-06 発光装置及び電子機器

Related Child Applications (1)

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JP2014131202A Division JP5823576B2 (ja) 2009-01-08 2014-06-26 発光装置

Publications (2)

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JP2010182668A true JP2010182668A (ja) 2010-08-19
JP2010182668A5 JP2010182668A5 (ja) 2013-01-31

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ID=42311122

Family Applications (7)

Application Number Title Priority Date Filing Date
JP2010000904A Withdrawn JP2010182668A (ja) 2009-01-08 2010-01-06 発光装置及び電子機器
JP2014131202A Active JP5823576B2 (ja) 2009-01-08 2014-06-26 発光装置
JP2015199096A Active JP6101769B2 (ja) 2009-01-08 2015-10-07 発光装置
JP2017034969A Active JP6537545B2 (ja) 2009-01-08 2017-02-27 発光装置
JP2019104616A Active JP6783901B2 (ja) 2009-01-08 2019-06-04 発光装置
JP2020177251A Active JP7048699B2 (ja) 2009-01-08 2020-10-22 発光装置
JP2022047729A Withdrawn JP2022075922A (ja) 2009-01-08 2022-03-24 発光装置

Family Applications After (6)

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JP2014131202A Active JP5823576B2 (ja) 2009-01-08 2014-06-26 発光装置
JP2015199096A Active JP6101769B2 (ja) 2009-01-08 2015-10-07 発光装置
JP2017034969A Active JP6537545B2 (ja) 2009-01-08 2017-02-27 発光装置
JP2019104616A Active JP6783901B2 (ja) 2009-01-08 2019-06-04 発光装置
JP2020177251A Active JP7048699B2 (ja) 2009-01-08 2020-10-22 発光装置
JP2022047729A Withdrawn JP2022075922A (ja) 2009-01-08 2022-03-24 発光装置

Country Status (4)

Country Link
US (2) US9929220B2 (zh)
JP (7) JP2010182668A (zh)
KR (8) KR101681038B1 (zh)
TW (1) TWI607670B (zh)

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012046428A1 (ja) * 2010-10-08 2012-04-12 シャープ株式会社 半導体装置の製造方法
JP2014049441A (ja) * 2012-08-31 2014-03-17 Samsung Display Co Ltd 有機発光装置およびその製造方法
KR20140055950A (ko) * 2012-10-30 2014-05-09 엘지디스플레이 주식회사 유기발광다이오드 표시장치 및 그 제조방법
KR20150074383A (ko) * 2013-12-24 2015-07-02 엘지디스플레이 주식회사 점등 패드부 및 이를 포함하는 유기발광표시장치
JP2016164893A (ja) * 2011-02-14 2016-09-08 株式会社半導体エネルギー研究所 発光装置
JP2017037860A (ja) * 2011-02-25 2017-02-16 株式会社半導体エネルギー研究所 電子機器
JP2019008305A (ja) * 2013-08-19 2019-01-17 株式会社半導体エネルギー研究所 発光装置
JP2020073947A (ja) * 2014-07-25 2020-05-14 株式会社半導体エネルギー研究所 表示装置
JP2021009849A (ja) * 2014-02-19 2021-01-28 株式会社半導体エネルギー研究所 表示装置
JPWO2020111202A1 (ja) * 2018-11-28 2021-10-07 ソニーグループ株式会社 表示装置および電子機器
JP2021185416A (ja) * 2013-08-01 2021-12-09 株式会社半導体エネルギー研究所 発光装置
JP2022089889A (ja) * 2013-07-12 2022-06-16 株式会社半導体エネルギー研究所 発光表示装置
WO2022214904A1 (ja) * 2021-04-08 2022-10-13 株式会社半導体エネルギー研究所 表示装置
WO2023126739A1 (ja) * 2021-12-29 2023-07-06 株式会社半導体エネルギー研究所 電子機器

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TWI460851B (zh) 2005-10-17 2014-11-11 Semiconductor Energy Lab 半導體裝置及其製造方法
TWI607670B (zh) 2009-01-08 2017-12-01 半導體能源研究所股份有限公司 發光裝置及電子裝置
US9136286B2 (en) * 2009-08-07 2015-09-15 Semiconductor Energy Laboratory Co., Ltd. Display panel and electronic book
US20120295376A1 (en) * 2011-05-16 2012-11-22 Korea Advanced Institute Of Science And Technology Method for manufacturing a led array device, and led array device manufactured thereby
KR101879831B1 (ko) * 2012-03-21 2018-07-20 삼성디스플레이 주식회사 플렉시블 표시 장치, 유기 발광 표시 장치 및 플렉시블 표시 장치용 원장 기판
KR102105287B1 (ko) 2012-08-01 2020-04-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
KR20140031003A (ko) * 2012-09-04 2014-03-12 삼성디스플레이 주식회사 유기 발광 표시 장치 및 그 제조 방법
JP6204012B2 (ja) 2012-10-17 2017-09-27 株式会社半導体エネルギー研究所 発光装置
JP6076683B2 (ja) 2012-10-17 2017-02-08 株式会社半導体エネルギー研究所 発光装置
CN103794625B (zh) * 2012-10-30 2017-04-12 乐金显示有限公司 有机发光二极管显示装置及其制造方法
US20140144593A1 (en) * 2012-11-28 2014-05-29 International Business Machiness Corporation Wafer debonding using long-wavelength infrared radiation ablation
US9636782B2 (en) 2012-11-28 2017-05-02 International Business Machines Corporation Wafer debonding using mid-wavelength infrared radiation ablation
JP6155020B2 (ja) 2012-12-21 2017-06-28 株式会社半導体エネルギー研究所 発光装置及びその製造方法
JP6216125B2 (ja) 2013-02-12 2017-10-18 株式会社半導体エネルギー研究所 発光装置
KR20140107036A (ko) * 2013-02-27 2014-09-04 삼성디스플레이 주식회사 유기 발광 표시 장치 및 그 제조 방법, 그리고 도너 기판
JP6104649B2 (ja) 2013-03-08 2017-03-29 株式会社半導体エネルギー研究所 発光装置
KR20140120427A (ko) * 2013-04-02 2014-10-14 삼성디스플레이 주식회사 유기 발광 표시 장치 및 유기 발광 표시 장치의 제조 방법
KR102064392B1 (ko) * 2013-06-04 2020-01-10 삼성디스플레이 주식회사 유기발광표시장치 및 그 제조방법
KR102080008B1 (ko) 2013-07-12 2020-02-24 삼성디스플레이 주식회사 유기발광표시장치 및 그 제조방법
TWI576190B (zh) 2013-08-01 2017-04-01 Ibm 使用中段波長紅外光輻射燒蝕之晶圓剝離
GB2521000A (en) * 2013-12-07 2015-06-10 Ct De Inova Μes Csem Brasil Electroluminescent device and manufacturing method thereof
KR102107456B1 (ko) * 2013-12-10 2020-05-08 삼성디스플레이 주식회사 플렉시블 표시 장치 및 이의 제조 방법
KR20150075367A (ko) * 2013-12-25 2015-07-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 전자 기기
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